Composite structure including a layer of single-crystal iii-v compound material, and associated manufacturing process
TW202642022APending Publication Date: 2026-10-16SOITEC SA
View PDF 0 Cites 0 Cited by
Patent Information
- Application Number
- TW114149642
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2024-12-20
- Filing Date
- 2025-12-17
- Publication Date
- 2026-10-16
Smart Images

Figure TWG2TA001080716_001 
Figure TWG2TA001080716_002 
Figure TWG2TA001080716_003
Abstract
The invention relates to a composite structure comprising: - a seed layer of single-crystal III-V compound material extending in a main plane, - a support substrate made of crystalline material, on which the seed layer is disposed via a bonding interface, the support substrate comprising a peripheral edge devoid of seed layer material, the peripheral edge extending around a border of the seed layer in the main plane, - an intermediate layer made of amorphous material, arranged between the seed layer and the support substrate and present on the peripheral edge, - at least one trench present in the peripheral edge, extending, according to an axis normal to the main plane, through the intermediate layer to the support substrate, or even into the support substrate, the trench being located less than
Need to check novelty before this filing date? Find Prior Art
