Method for manufacturing lithography mask and computing system for executing the method

Abstract

According to various embodiments, a method of manufacturing a lithography mask includes receiving an initial mask design having a first curved feature, determining an edge placement error, generating a corrected mask design based on the edge placement error, and fabricating the lithography mask based on the corrected mask design. Determining the edge placement error includes approximating the first curved feature by a cosine function, determining an arc length of the cosine function between two endpoints that are symmetrically located on the first curved feature, determining a chord length between the two endpoints, and determining a value of the edge placement error to be a linear function of a first ratio of the arc length to the chord length. In other embodiments, the edge placement error is a value that is proportional to a second ratio of a squared standard deviation divided by a squared characteristic wavelength of the cosine function.

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