Methods and apparatus for wafer positioning calibration, charged particle beam apparatus

Abstract

This invention provides a method and apparatus for calibrating wafer position, and a charged particle beam device. The wafer surface has at least a first mark and a second mark. The calibration method includes: planning the wafer transport path and / or moving the position of the sample stage so that when the wafer is placed on a wafer carrier, the first mark falls within the field of view of a first image acquisition device above the wafer loading position; acquiring a first image containing the first mark during the wafer carrier's adsorption of the wafer, or after the wafer carrier has finished adsorbing the wafer; moving the sample stage based on the relative position information between the first mark and the second mark so that the second mark falls within the field of view of the first image acquisition device; acquiring a second image including the second mark; and obtaining calibration parameters for the wafer position based on the first image and the second image.

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