Optical semiconductor devices
TW202642613APending Publication Date: 2026-10-16MITSUBISHI ELECTRIC CORP
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Patent Information
- Application Number
- TW115108892
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2025-04-09
- Filing Date
- 2026-03-11
- Publication Date
- 2026-10-16
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Abstract
The laser diode (100) includes: a semi-insulating substrate (3), a laser section (1) formed on the semi-insulating substrate (3), an optical modulator (2) formed on the semi-insulating substrate (3) and modulating the output light of the laser section (1), and a back electrode (19) formed on the underside of the semi-insulating substrate (3). The laser diode (100) is mounted on a mounting substrate (21), and the back electrode (19) is bonded to an electrode pattern (21a) on the mounting substrate (21). A first low-pass filter (25a) is connected between the cathode of the laser section (1) and a ground terminal (21h). A second low-pass filter (25b) is connected between the anode of the laser section (1) and a power supply terminal (21g). The electrode pattern (21a) has a floating potential. Furthermore, a third low-pass filter (25c) is connected between the electrode pattern (21a) and the ground terminal (21h).
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