Memory device and method for forming the same

Abstract

A method for forming a memory device includes forming a stack over a substrate. The stack includes a first supporting layer, a first sacrificial layer, a second supporting layer, a second sacrificial layer, and a third supporting layer. The method further includes forming a trench in the stack. The method further includes forming a bottom electrode in the trench. Forming the bottom electrode in the trench includes: forming a first conductive material lining the trench; forming a second conductive material filling the trench; and performing a planarization process to level the first conductive material with the second conductive material. The method further includes removing the first sacrificial layer and the second sacrificial layer from the stack. The method further includes forming a capacitor dielectric layer over the bottom electrode. The method further includes forming a top electrode over the capacitor dielectric layer.

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