Electrical structure including a MOS transistor
TW202642796APending Publication Date: 2026-10-16NAN YA TECH
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Patent Information
- Application Number
- TW114130732
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2025-04-10
- Filing Date
- 2025-08-12
- Publication Date
- 2026-10-16
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Abstract
An electrical structure and a method of manufacturing an electrical structure are provided. The electrical structure includes a substrate and a metal-oxide-semiconductor (MOS) transistor. The MOS transistor is disposed on a first surface of the substrate, and includes a gate structure. The gate structure has a top surface and a bottom surface opposite to the top surface. A width of the top surface is less than a width of the bottom surface.
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