Semiconductor device and method for manufacturing the same

Abstract

The semiconductor device includes: a plurality of word-lines extending in a first direction, a plurality of active regions extending in a diagonal direction with the first direction, the plurality of the active regions configured to overlap with the word-line structures, a plurality of bit-line pad regions each of which overlaps with one end of the active region, a plurality of storage-node pad regions each of which overlaps with another end of the active region, a plurality of first pad insulation regions each of which contacts the bit-line pad region, contacts the one side of the word-line structure and having a first height, and a plurality of second pad insulation regions each of which contacts the storage-node pad region contacts the another side of the word-line structure, having a second height higher than the first height.

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