Semiconductor structure
TW202642807APending Publication Date: 2026-10-16POWERCHIP SEMICON MFG CORP
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Patent Information
- Application Number
- TW114113454
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Filing Date
- 2025-04-10
- Publication Date
- 2026-10-16
Smart Images
Figure TWG2TA001080206_001 
Figure TWG2TA001080206_002 
Figure TWG2TA001080206_003
Abstract
A semiconductor structure including a first electrode, a second electrode, a ferroelectric material layer, and a first dielectric layer is provided. The second electrode is located on the first electrode. The ferroelectric material layer and the first dielectric layer are located between the first electrode and the second electrode. The first dielectric layer is in direct contact with the ferroelectric material layer. The material of the ferroelectric material layer is hafnium zirconium oxide. The material of the first dielectric layer is zirconium dioxide or hafnium oxide.
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