Manufacturing method of memory device

TW202642809APending Publication Date: 2026-10-16KIOXIA CORP
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Patent Information

Application Number
TW115108362
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2022-09-07
Filing Date
2023-06-15
Publication Date
2026-10-16

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Abstract

One embodiment of the memory device includes: a first strongly magnetic layer; a first insulating layer on the first strongly magnetic layer; a second strongly magnetic layer on the first insulating layer; a first oxide extending over the side surfaces of the first strongly magnetic layer, the first insulating layer, and the second strongly magnetic layer; a second oxide covering the first strongly magnetic layer, the first insulating layer, and the second strongly magnetic layer, and comprising magnesium oxide, aluminum oxide, silicon oxide, or an alkaline earth metal oxide; and a silicon nitride on the second oxide.
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