Semiconductor device, semiconductor structure and methods of formation

Abstract

The top electrode layers of multiple capacitor structures are commonly connected to the same interconnect structure (e.g., via) for the supply of voltage to each top electrode layer. The commonly connected top electrode layers require a smaller quantity of metallization structures and interconnect structures for signal routing, which occupy a smaller area of a semiconductor device in comparison to metallization structures and interconnect structures for individually connected top electrode layers. As a result, larger metal-insulator-metal (MIM) capacitor structures may be formed, resulting in larger capacitor storage capacity, and increased device performance.

Images