Semiconductor device and methods of formation

TW202642820APending Publication Date: 2026-10-16TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
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Patent Information

Application Number
TW114120685
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-04-09
Filing Date
2025-06-03
Publication Date
2026-10-16

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Abstract

A semiconductor device includes a substrate, a gallium-based layer on the substrate, a lattice mismatch layer in the gallium-based layer, a gate electrode of a transistor, and a source / drain electrode. The lattice mismatch layer is adjacent to a first side of the gallium-based layer, the substrate is on a second side of the gallium-based layer opposite the first side, the gate electrode of the transistor on the first side of the gallium-based layer, and the source / drain electrode disposed through the substrate, and through the second side of the gallium-based layer into a portion of the gallium-based layer.
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