Semiconductor device

Abstract

A semiconductor device comprises a substrate including a PMOSFET region and an NMOSFET region, a pair of first channel patterns spaced apart in a first direction on the PMOSFET region, first source / drain patterns at respective sides of the pair of first channel patterns in a second direction crossing the first direction, a first gate pattern surrounding at least a portion of the first channel patterns, a pair of second channel patterns spaced apart in the first direction on the NMOSFET region, second source / drain patterns at respective sides of the pair of second channel patterns in the second direction, a second gate pattern surrounding at least a portion of the second channel patterns, a first upper insulating structure between a pair of the first source / drain patterns, and a second upper insulating structure between a pair of the second source / drain patterns.

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