Semiconductor devices having gate contact and related methods

Abstract

A device includes: a substrate; an isolation structure in the substrate; an active area being laterally surrounded by the isolation structure; a first gate line positioned on the substrate and overlapping the active area and the isolation structure; a second gate line immediately adjacent the first gate line; a first contact positioned on the first gate line and overlapping the isolation structure; a second contact positioned on the first gate line and overlapping the active area; a third contact positioned on the second gate line and overlapping the isolation structure; a fourth contact positioned on the second gate line and overlapping the active area; and a metal layer that includes: a first portion; a second portion that extends from the first portion and overlaps the first contact and the third contact; and a third portion that extends from the first portion and overlaps the second contact and the fourth contact.

Images