Semiconductor structure and fabricating method thereof

Abstract

An exemplary device structure includes a semiconductor layer extending along a first direction between a first source / drain and a second source / drain. The semiconductor layer may be disposed over a semiconductor base. The device structure further includes a gate disposed between the first source / drain and the second source / drain. The gate is disposed over and engages the channel layer, and the gate extends along a second direction that is different than the first direction. The gate further extends along a third direction through the channel layer, and the third direction is different than the first direction and the second direction. In some embodiments, the gate may engage four sidewalls of the semiconductor layer. In some embodiments, the semiconductor layer is a ring-shaped semiconductor layer, and the semiconductor layer may surround a portion of the gate extending therethrough. In some embodiments, the semiconductor layer is a segmented channel layer.

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