Semiconductor device

Abstract

This invention discloses a semiconductor device and a method for manufacturing the same. The semiconductor device includes: a substrate; a first active pattern formed on the substrate; a first gate structure surrounding at least a portion of the first active pattern; a first source / drain region and a second source / drain region respectively disposed on a first side and a second side of the first gate structure facing each other; and a first dielectric pattern disposed on a third side different from the first side and the second side of the first gate structure, wherein the first dielectric pattern includes: a first portion of the first dielectric pattern disposed between the first source / drain region and the first side of the first gate structure; and a second portion of the first dielectric pattern disposed between the second source / drain region and the second side of the first gate structure.

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