Integrated circuit device

TW202642853APending Publication Date: 2026-10-16SAMSUNG ELECTRONICS CO LTD
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Patent Information

Application Number
TW114147333
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2025-04-04
Filing Date
2025-12-03
Publication Date
2026-10-16

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    Figure TWG2TA001080659_003
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Abstract

Provided are an integrated circuit device and a method of manufacturing the same, wherein, in the integrated circuit device, a curved channel layer is arranged to improve electrical characteristics, and a gate insulating material is not formed in an inner spacer formed on sidewalls of a source / drain region, and thus parasitic capacitance is reduced.
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