Integrated circuit device

Abstract

An integrated circuit device includes a plurality of channel layers extending in a first horizontal direction and including a first channel layer and a second channel layer, a gate line surrounding the plurality of channel layers, wherein the gate line includes a first sub-gate arranged between the first channel layer and the second channel layer, a source / drain pattern arranged on a sidewall of the gate line, and a channel passivation layer including a first passivation layer and a second passivation layer, wherein the first passivation layer is disposed between the first sub-gate and the first channel layer, and the second passivation layer is arranged between the first sub-gate and the second channel layer. The plurality of channel layers protrude in the first horizontal direction from the sidewall of the gate line, and the plurality of channel layers include transition metal dichalcogenides (TMD).

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