Semiconductor device and methods of manufacturing same

Abstract

A semiconductor device includes： in a first metallization (M_1st) layer、M_1st segments having a first pitch and substantially having a first width a uniform first gap therebetween; and capacitor cell regions (cap cells) arranged in an array and including first cap cells and second cap cells; each cap cell having a first quantity、and a substantially uniform physical arrangement、of the M_1st segments; electrical arrangements of the M_1st segments being different for the second cap cells than for the first cap cells; for each of the cap cells、couplings between the M_1st segments and correspondingly a first voltage or a second voltage being arranged such that： each of the first cap cells providing substantially a first capacitance; and each of the second cap cells providing substantially a non-zero second capacitance smaller than the first capacitance.

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