ESD / EOS protection device

Abstract

ESD / EOS protection devices are provided. The ESD / EOS protection device includes a fin structure of a semiconductor material over a semiconductor substrate, a first source / drain region in the fin structure, a second source / drain region in the fin structure, a gate structure over the fin structure and between the first source / drain region and the second source / drain region, a first dummy gate structure over the fin structure, a first doped region in the fin structure and between the first source / drain region and the second source / drain region, and a first doped layer under the first dummy gate structure and extending from the second source / drain region to the first doped region. A lower surface of the first doped layer is higher than a lower surface of the first doped region.

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