Electrostatic discharge protection circuit comprising reverse blocking diode and semiconductor device comprising the same

TW202642862APending Publication Date: 2026-10-16SAMSUNG ELECTRONICS CO LTD
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Patent Information

Application Number
TW114150014
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Priority Date
2024-12-20
Filing Date
2025-12-18
Publication Date
2026-10-16

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Abstract

An electrostatic discharge protection circuit includes a first diode including an anode connected to an input / output pad and a cathode, and configured to form an electrostatic discharge path of a positive charge generated in the input / output pad, a second diode connected between the input / output pad and a second supply voltage terminal to which a ground voltage is applied, and configured to form an electrostatic discharge path of a negative charge generated in the input / output pad, a first resistor configured to limit a current flowing between the input / output pad and an input / output driver, and a reverse blocking diode connected between the first diode and a first supply voltage terminal to which a first supply voltage greater than the ground voltage is applied. The input / output driver is connected between the first supply voltage terminal and the second supply voltage terminal.
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