Flip-chip light emitting diode and manufacturing method thereof

Abstract

The invention provides a method for manufacturing a flip-chip light emitting diode, which includes the following steps: providing a first substrate; performing an epitaxial process to form a semiconductor structure on the first substrate, and the semiconductor structure includes a current conductive layer with a bonding side and defines a first electrode projection area and a second electrode projection area; performing an etching process to form at least one groove on the bonding side; performing a filling process to fill a transparent material into the at least one groove to change current paths on the bonding side; performing a bonding process to bond a second substrate to the bonding side; and removing the first substrate and forming a first electrode and a second electrode on a side of the semiconductor structure adjacent to the first substrate. A position of the first electrode corresponds to the first electrode projection area, and a position of the second electrode corresponds to the second electrode projection area.

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