Optical semiconductor devices and methods for manufacturing optical semiconductor devices

Abstract

This invention provides an optical semiconductor device with improved efficiency in terms of current, such as luminous efficiency or photosensitive sensitivity, and a method for manufacturing the optical semiconductor device. The optical semiconductor device includes a semiconductor stack having at least one stacked structure, wherein the stacked structure has an active layer and a tunnel junction layer, a p-type cladding layer between the active layer and the tunnel junction layer, a first electron blocking layer between the active layer and the p-type cladding layer, and a second electron blocking layer between the p-type cladding layer and the tunnel junction layer. The tunnel junction layer includes a p-type InGaAlAsP layer on the side of the second electron blocking layer and an n-type InGaAlAsP layer on the opposite side of the second electron blocking layer. The peak wavelength of the active layer is 1000 nm or more and 3000 nm or less, the dopant concentration of the p-type cladding layer is 5.0 × 10¹⁷ atoms / cm³ or more and 9.5 × 10¹⁷ atoms / cm³ or less, and the thickness is 500 nm or less.

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