Semiconductor device and semiconductor component

Abstract

The present disclosure provides a semiconductor device including a first semiconductor structure, a second semiconductor structure, a light-emitting region and a first electrode. The first semiconductor structure includes a first semiconductor layer and a second semiconductor layer located under the first semiconductor layer. The first semiconductor structure has an upper surface. The upper surface has a first region and a second region. The second semiconductor structure and the light-emitting region is located on the first region and not on the second region. The light-emitting region is located between the first and the second semiconductor structures. The first electrode is located on the second region and directly contacts the first semiconductor layer. The first semiconductor layer has a conductivity type of n-type and is the thickest layer in the first semiconductor structure. The first semiconductor layer includes a first Group III-V semiconductor material which includes a ternary or quaternary arsenide or phosphide.

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