Light emitting diode and manufacturing method thereof

TW202642881APending Publication Date: 2026-10-16TAIWAN ASIA SEMICONDUCTOR CORPORATION
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Patent Information

Application Number
TW114112674
Authority / Receiving Office
TW · TW
Patent Type
Applications
Current Assignee / Owner
Filing Date
2025-04-01
Publication Date
2026-10-16

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Abstract

A light-emitting diode and a manufacturing method thereof are provided. The light-emitting diode includes a conductive substrate, a transparent conductive layer and an epitaxial composite layer. The transparent conductive layer has a plurality of conductive plugs and are disposed on the conductive substrate. The epitaxial composite layer has a light-emitting layer and a first conductive type in-situ doped epitaxial bottom layer, which is disposed on the transparent conductive layer. The first conductive type in-situ doped epitaxial bottom layer has a second conductive type local diffusion zone, which is disposed in the first conductive type in-situ doped epitaxial bottom layer and contacts with the conductive plugs so that the current flowing through the light-emitting layer can flow directly into the conductive plugs through the second conductive type local diffusion zone.
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