Phase change material (PCM) switch with heater having buffer layer and method for forming the same

Abstract

The present disclosure is directed towards an integrated chip. The integrated chip includes a first dielectric layer over a substrate. A phase change material (PCM) structure is over the first dielectric layer. A heater structure is in the first dielectric layer and under the PCM structure. The heater structure includes a first buffer layer and a first conductive layer on the first buffer layer. The first conductive layer comprises a metal. The first buffer layer comprises the metal and a first element different from the metal. A first atomic percent of the first element in the first buffer layer is greater than a second atomic percent of the metal in the first buffer layer.

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