Equal matching of oxidation rate between sige and si through clustered pre-clean and pre-surface nitridation

Abstract

Embodiments disclosed herein generally relate to methods and systems that facilitate the formation of silicon dioxide (SiO2) layers in complementary metal-oxide semiconductor (CMOS) film stack structures. In some embodiments, a method of forming a metal phosphide hardmask includes providing the substrate to a processing chamber, the substrate comprising a silicon (Si) layer and a silicon germanium (SiGe) layer, removing native oxides from the Si layer and the SiGe layer, performing thermal nitridation on the Si layer and the SiGe layer, and oxidizing the Si layer and the SiGe layer with atomic oxygen or hydroxyl (OH) radicals.

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