Thin films with high dielectric constant and method for manufacturing the same

Abstract

The present invention provides a method for manufacturing thin films with high dielectric constant, including: preparing a substrate; depositing a rare earth element layer on the substrate; depositing a dielectric material layer on the rare earth element layer; performing an annealing process to migrate and dope at least a portion of the rare earth element in the rare earth element layer into the dielectric material layer to manufacture thin films with high dielectric constant. According to the present invention, by disposing the rare earth element layer adjacent to the dielectric material layer along with the annealing process, the rare earth metal is allowed to be at least partially doped into the dielectric material layer, thereby increasing the dielectric constant of the thin films and improving the internal structural defects of the thin films.

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