Composition, etching method, method for manufacturing semiconductor device, etching apparatus and cleaning method

Abstract

This invention provides a composition capable of removing an object even when using a gas with a low GWP, an etching method, a semiconductor device manufacturing method, an etching apparatus, and a cleaning method. Specifically, this invention relates to an etching method that uses a plasma gas obtained by electrolyzing an etching gas composition containing SFxZy (where x and y are integers greater than or equal to 1, x + y = 6, and Z is a halogen atom other than fluorine; when multiple Z atoms are present, they may be identical or different) to etch the object.

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