High chi block copolymer (BCP) pattern on latent extreme ultraviolet (EUV) images

Abstract

‎Embodiments described herein relate to a method of patterning a ‎polarity switching layer that includes applying a block copolymer over the polarity ‎switching layer, and annealing the block copolymer to generate a polar region ‎and a non-polar region of the block copolymer. In an embodiment, a chemical ‎difference between a first region of the polarity switching layer and a second ‎region of the polarity switching layer allows for directed self-assembly of the polar ‎region of the block copolymer and the non-polar region of the block copolymer ‎over the polarity switching layer. In an embodiment, the method may further ‎include selectively removing either the polar region or the non-polar region to ‎form a patterned mask over the polarity switching layer. In an embodiment, the ‎method may further include patterning the polarity switching layer with an etching ‎process using the patterned mask.‎

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