Semiconductor device structure and method of forming the same
TW202642992APending Publication Date: 2026-10-16TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
View PDF 0 Cites 0 Cited by
Patent Information
- Application Number
- TW114117839
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2025-04-04
- Filing Date
- 2025-05-13
- Publication Date
- 2026-10-16
Smart Images
Figure TWG2TA001080421_001 
Figure TWG2TA001080421_002 
Figure TWG2TA001080421_003
Abstract
A semiconductor device structure includes an active region, an isolation region disposed alongside the active region, a gate structure over the active region, an interlayer dielectric (ILD) layer disposed over the isolation region, wherein the ILD layer has a dielectric constant that is about
Need to check novelty before this filing date? Find Prior Art