Integrated circuit device and method of fabrication
TW202643016APending Publication Date: 2026-10-16TAIWAN SEMICONDUCTOR MANUFACTURING CO LTD
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Patent Information
- Application Number
- TW114134372
- Authority / Receiving Office
- TW · TW
- Patent Type
- Applications
- Current Assignee / Owner
- Priority Date
- 2025-07-10
- Filing Date
- 2025-09-08
- Publication Date
- 2026-10-16
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Abstract
An integrated circuit device includes: a die; an interconnect at least partially overlapping the die; and a plurality of bumps where the interconnect and die overlap. The interconnect includes at least a first conductive layer and a second conductive layer, the plurality of bumps includes a first bump and a second bump, each of the first and second conductive layers includes a plurality of signal conductors between the first and second bumps and a plurality of ground conductors between the first and second bumps, and all of the signal conductors in each of the first and second conductive layers between the first bump and the second bump are between corresponding pairs of ground conductors in the corresponding conductive layer, and the pairs of ground conductors are continuously coupled within the first and second conductive layers from a first side to a second side of the plurality of signal conductors.
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