Fixture for automatic calibration of substrate transfer robot

Abstract

A robot calibration system includes a calibration device configured to be mounted on a substrate processing chamber. The calibration device includes at least one camera configured to capture images including the outer edge of a test substrate and an edge ring surrounding the test substrate. A controller is configured to receive the captured images, analyze the captured images to measure the distance between the outer edge of the test substrate and the edge ring, calculate the center of the test substrate based on the measured distance, and calibrate a robot based on the calculated center of the test substrate, wherein the robot is configured to transport the substrate to and from the substrate processing chamber.

Description

Technical Field

[0001] [Cross-reference to related applications] This application claims priority to U.S. Provisional Patent Application No. 62 / 813,371, filed March 4, 2019. The entire contents of the aforementioned application are incorporated herein by reference.

[0002] This invention relates to a system and method for a robot used in a substrate processing system. Prior Technology

[0003] The prior art description provided herein is intended to generally introduce the background of this invention. The achievements of the inventors named in this application, as well as embodiments of the specification that were not worthy of prior art at the time of application, within the scope of the prior art section are not intended or implied to be considered prior art against this invention.

[0004] A substrate processing system can be used to process substrates (e.g., semiconductor wafers). Exemplary processes that can be performed on a substrate include (but are not limited to) chemical vapor deposition (CVD), atomic layer deposition (ALD), conductor etching, and / or other etching, deposition, or cleaning processes. The substrate can be disposed on a substrate support (e.g., a base, an electrostatic chuck (ESC), etc.) within the processing chamber of the substrate processing system. During etching, a gas mixture containing one or more precursors can be introduced into the processing chamber, and plasma can be used to initiate a chemical reaction. Summary of the Invention

[0005] A robot calibration system includes a calibration device configured to be mounted on a substrate processing chamber. The calibration device includes at least one camera configured to capture images including the outer edge of a test substrate and an edge ring surrounding the test substrate. A controller is configured to receive the captured images, analyze the captured images to measure the distance between the outer edge of the test substrate and the edge ring, calculate the center of the test substrate based on the measured distance, and calibrate a robot based on the calculated center of the test substrate, wherein the robot is configured to transport the substrate to and from the substrate processing chamber.

[0006] Among other features, the at least one camera corresponds to three cameras. The robotic calibration system includes a seal that compresses between the calibration device and the substrate processing chamber, and the controller is configured to evacuate the substrate processing chamber when the calibration device is mounted on the substrate processing chamber. The controller is configured to control the at least one camera to capture the image when the substrate processing chamber is under vacuum.

[0007] Among other features, the controller is configured to determine the width of pixels in the field of view of the at least one camera, and to measure the distance between the outer edge of the test substrate and the edge ring based on the determined width of the pixels. The test substrate includes at least one reference mark located in the field of view of the at least one camera, the at least one reference mark having a known size, and the controller is configured to determine the width of the pixels based on the known size. The at least one reference mark is a square, and the known size is the width of the square.

[0008] Among other features, the test substrate includes a reference line aligned with its radius, and the controller is configured to measure the distance between the outer edge of the test substrate and the edge ring at a position corresponding to the reference line. The controller is configured to calculate a correction amount based on the calculated center of the test substrate and update the robot's coordinates based on this correction amount. The controller is also configured to calculate the correction amount based on the calculated offset between the center of the test substrate and the center of the edge ring. The robot is corrected by updating its complex coordinates.

[0009] A method for calibrating a robot configured to transport a substrate to and from a substrate processing chamber, the substrate processing chamber having a calibration device mounted on the substrate processing chamber, the calibration device having at least one camera, the method comprising using the at least one camera to capture an image including an outer edge of a test substrate and an edge ring surrounding the test substrate. The method further comprises analyzing the captured image to measure a distance between the outer edge of the test substrate and the edge ring; calculating a center of the test substrate based on the measured distance; and calibrating the robot configured to transport the substrate to and from the substrate processing chamber based on the calculated center of the test substrate.

[0010] Among other features, the at least one camera corresponds to three cameras. The method further includes evacuating the substrate processing chamber. The method further includes controlling the at least one camera to capture the image while the substrate processing chamber is under vacuum.

[0011] Among other features, the method further includes determining the width of pixels in the field of view of the at least one camera, and measuring the distance between the outer edge of the test substrate and the edge ring based on the determined width of the pixels. The test substrate includes at least one reference mark located in the field of view of the at least one camera, the at least one reference mark having a known size, and the width of the pixels being determined based on the known size. The at least one reference mark is a square, and the known size is the width of the square.

[0012] Among other features, the test substrate includes a reference line aligned with the radius of the test substrate, and the distance between the outer edge of the test substrate and the edge ring is measured at a position corresponding to the reference line. The method further includes calculating a correction amount based on the calculated center of the test substrate, and correcting the robot based on the correction amount. The method further includes calculating the correction amount based on the calculated offset between the center of the test substrate and the center of the edge ring.

[0013] Further applicability of this disclosure will become apparent from the embodiments, the scope of the invention claims, and the drawings. The detailed descriptions and specific examples are intended for illustrative purposes only and are not intended to limit the scope of this disclosure. Simple Explanation of the Diagram

[0014] This disclosure will be more fully understood from the embodiments and accompanying drawings, wherein:

[0015] According to the present invention, FIG1 is a functional block diagram of an illustrative substrate processing system;

[0016] According to the present invention, Figures 2A, 2B, 2C, and 2D show exemplary calibration devices and robot calibration systems;

[0017] According to the present invention, FIG3 shows the steps of an exemplary method for calibrating a robot; and

[0018] According to the present invention, Figures 4A, 4B, 4C, and 4D show illustrations of exemplary calibration devices.

[0019] In the diagram, component symbols may be reused to distinguish similar and / or identical components. Implementation

[0020] In substrate handling systems, robots / manipulators (e.g., vacuum transfer modules, or VTMs, robots) can be used to transport substrates to and from substrate supports within the processing chamber. Some substrate handling systems can implement dynamic alignment systems to utilize robots to align substrates on substrate supports. Aligning the substrates on the base allows for more accurate gripping and / or transfer of the substrates (e.g., to processing units) using robots or other tools. Substrate alignment can be achieved using notches formed in the outer edge of the substrate. Various types of substrate aligners can be used to detect the position of the notches as the substrate rotates. For example, when the substrate is slowly rotated using a chuck, a sensor can detect the notch. Based on the detected notch, the notch position and substrate offset are calculated and provided to the robot.

[0021] The robot can be further configured to transport the edge ring back and forth to the substrate support. The robot can be controlled according to predetermined calibration data to center the edge ring on the substrate support. Accurate placement of the edge ring on the substrate support can be difficult. For example, the desired position of the edge ring may be a centered position relative to the substrate support. In some examples, the robot can be configured to transport the edge ring to a predetermined, known centered position relative to the substrate support. However, the placement of components on the substrate support, maintenance within the processing chamber, etc., may cause changes in the center position of the substrate support.

[0022] Therefore, the robot must be calibrated periodically to ensure accurate placement of the transported substrates, edge rings, and / or other components in the substrate processing chamber. Conventional robot calibration methods are susceptible to human error and system and / or process variations, such as vacuum deflection.

[0023] The robot calibration system and method according to the present invention provide a robot calibration apparatus configured to measure the distance between a substrate (e.g., a test substrate) mounted on a substrate support and an edge ring, and to calibrate the robot accordingly. For example, the robot calibration apparatus may include three or more imaging devices (e.g., cameras) configured to measure the distance from the edge of the test substrate to the edge (e.g., the inner edge) of the edge ring. In one example, the robot calibration apparatus includes three cameras mounted in a triangular arrangement. The test substrate may include reference marks to assist in calculating the position of the test substrate relative to the edge ring. Based on the calculated position of the test substrate relative to the edge ring, the system is configured to calculate adjustment information and control the robot to retrieve and replace the test substrate. The retrieval and replacement operations can be iteratively repeated until the test substrate is in the desired position, thus completing the robot calibration.

[0024] Referring now to FIG1, an exemplary substrate processing system 100 is shown. By way of example only, the substrate processing system 100 can be used to perform etching using RF plasma and / or other suitable substrate processing. The substrate processing system 100 includes a processing chamber 102 that surrounds other components of the substrate processing system 100 and contains RF plasma. The substrate processing chamber 102 includes an upper electrode 104 and a substrate support 106 (e.g., an electrostatic chuck (ESC)). During operation, a substrate 108 is disposed on the substrate support 106. Although the substrate processing system 100 and chamber 102 are shown as an example, the principles of the invention can be applied to other types of substrate processing systems and chambers, such as substrate processing systems that generate plasma in situ, implement remote plasma generation and delivery (e.g., using plasma tubes, microwave tubes), etc.

[0025] For example only, the upper electrode 104 may include a gas distribution device, such as a spray head 109, for introducing and distributing the process gas. The spray head 109 may include a rod portion having one end configured to receive the process gas. The base is generally cylindrical and extends radially outward from the other end of the rod portion (located at a position spaced apart from the top surface of the processing chamber 102). The substrate-facing surface or panel of the base portion of the spray head 109 includes a plurality of holes through which the process gas or exhaust gas flows. Alternatively, the upper electrode 104 may include a conductive plate, and the process gas may be introduced in another manner.

[0026] The substrate support 106 includes a conductive base plate 110, which serves as a lower electrode. The base plate 110 supports a ceramic layer 112. In some examples, the ceramic layer 112 may include a heating layer, such as a ceramic multi-zone heating plate. A thermally resistive layer 114 (e.g., an adhesive layer) may be disposed between the ceramic layer 112 and the base plate 110. The base plate 110 may include one or more coolant channels 116 for allowing coolant to flow through the base plate 110.

[0027] RF generation system 120 generates and outputs an RF voltage to either the upper electrode 104 or the lower electrode (e.g., the base plate 110 of substrate support 106). The other of the upper electrode 104 and the base plate 110 may be DC grounded, AC grounded, or floating. By way of example only, RF generation system 120 may include an RF voltage generator 122 that generates an RF voltage fed to the upper electrode 104 or the base plate 110 via a matching and distribution network 124. In other examples, plasma may be generated inductively or remotely. Although (for illustrative purposes) RF generation system 120 corresponds to a capacitively coupled plasma (CCP) system, the principles of the invention can also be implemented in other suitable systems, such as (by way of example only) transformer-coupled plasma (TCP) systems, CCP cathode systems, remote microwave plasma generation and delivery systems, etc.

[0028] The gas delivery system 130 includes one or more gas sources 132-1, 132-2, ..., and 132-N (collectively referred to as gas sources 132), where N is an integer greater than zero. The gas sources supply one or more precursors and mixtures thereof. The gas sources may also supply exhaust gas. Vaporized precursors may also be used. The gas sources 132 are connected to the manifold 140 via valves 134-1, 134-2, ..., and 134-N (collectively referred to as valves 134) and mass flow controllers 136-1, 136-2, ..., and 136-N (collectively referred to as mass flow controllers 136). The output of the manifold 140 is fed to the processing chamber 102. For example only, the output of the manifold 140 is fed to the spray head 109.

[0029] Temperature controller 142 can be connected to a plurality of heating elements 144 (such as thermal control elements (TCEs)) disposed in ceramic layer 112. For example, heating elements 144 may include (but are not limited to) large heating elements corresponding to individual areas in a multi-zone heating plate, and / or an array of miniature heating elements disposed in multiple areas throughout the multi-zone heating plate. Temperature controller 142 can be used to control the plurality of heating elements 144 to control the temperature of substrate support 106 and substrate 108.

[0030] Temperature controller 142 can communicate with coolant assembly 146 to control the flow of coolant through channel 116. For example, coolant assembly 146 may include a coolant pump and a reservoir. Temperature controller 142 operates coolant assembly 146 to selectively allow coolant to flow through channel 116 to cool substrate support 106.

[0031] Valve 150 and pump 152 can be used to evacuate reactants from the self-processing chamber 102. System controller 160 can be used to control the components of the substrate processing system 100. Robot 170 can be used to transfer substrates onto and remove substrates from substrate support 106. For example, robot 170 can transfer substrates between substrate support 106 and load gate 172. Although shown as a separate controller, temperature controller 142 can be implemented within system controller 160. In some examples, a protective seal 176 can be provided around the adhesive layer 114 between ceramic layer 112 and substrate 110.

[0032] The substrate support 106 includes an edge ring 180. The edge ring 180 is movable relative to the substrate support 106 (e.g., it can move up and down in the vertical direction). For example, the edge ring 180 can be controlled via actuators and lifting pins in response to the system controller 160. In some examples, the system controller 160 and the robot 170 can be further configured to retrieve and replace the edge ring 180.

[0033] The system controller 160 according to the present invention is configured to perform calibration of the robot 170, as described in more detail below. For example, the processing chamber 102 may include a removable cover 184. The cover 184 and the spray head 109 are removable separately. In some examples, the spray head 109 or other upper electrode and gas distribution device may be integrated into the cover 184 so that when the cover 184 is removed, the spray head 109 is also removed from the processing chamber 102. During the calibration of the robot 170, a calibration apparatus (not shown in FIG. 1; described in more detail below) including an imaging device (e.g., a camera) is mounted on the processing chamber 102. The imaging device is configured to measure the distance between the substrate 108 (e.g., a test substrate) and the edge ring 180, and calibrate the robot 170 accordingly.

[0034] Referring now to Figures 2A, 2B, and 2C and continuing to refer to Figure 1, the exemplary correction device 200 according to the present invention includes a plurality of imaging devices, such as cameras 202. For example, each of the cameras 202 may correspond to a high-resolution charge-coupled device (or CCD) or a camera array. In this example, the correction device 200 includes three cameras 202 arranged at 120-degree intervals, as shown in the plan view in Figure 2B.

[0035] The calibration device 200 is configured to be mounted on the processing chamber 204 in place of the cover 184 to perform calibration by the robot 170. The calibration device 200 and the processing chamber 204 can be sealed using a seal (such as an O-ring) 206. The processing chamber 204 can be evacuated to a vacuum or other desired pressure for calibration. For example, the processing chamber 204 can be evacuated to a vacuum pressure consistent with the pressure within the processing chamber 204 during the processing of the substrate therein. Therefore, measurements for performing calibration are performed while the processing chamber 204 is under vacuum, and any structural deviations caused by the vacuum pressure (e.g., vacuum deflection of various components and surfaces within the processing chamber 204) are present. In this way, the calibration of the robot 170 according to the present invention more accurately corresponds to the state of the processing chamber 204 during the actual transport of the substrate back and forth for processing.

[0036] Each camera 202 is positioned to capture images of the outer edge of the test substrate 208 and the inner edge of the edge ring 212 within its respective field of view (FOV) 216. For example, the FOV 216 of each camera 202 is a rectangle of 18 x 22 mm. The captured images are then analyzed (e.g., by the system controller 160) to determine the distance between the edges of the test substrate 208 and the edge ring 212 in each image. The test substrate 208 may contain the same material (e.g., silicon) as the substrate to be processed in the processing chamber 204. Therefore, the characteristics, weight, and surface friction of the test substrate 208 under vacuum are consistent with those of a typical substrate to be processed in the processing chamber 204. Although shown outside of the calibration apparatus 200 and the cameras 202, in some examples, the system controller 160 and / or dedicated functional elements of the system controller 160 may be integrated into one or more of the cameras 202, calibration apparatus 200, etc.

[0037] In some examples, the test substrate 208 may include one or more reference marks 220 (e.g., lines aligned with the radius of the test substrate 208) to assist in analysis performed by the system controller 160. The test substrate 208 may further include a notch 224 for determining the alignment / orientation of the test substrate 208 using a suitable substrate alignment system.

[0038] The calibration device 200 may further include one or more measuring devices 228 and 232 for measuring the distances between the calibration device 200 and the test substrate 208 (and / or the upper surface of the substrate support 236) and the edge ring 212, respectively. For example, the measuring devices 228 and 232 may implement a laser transmission and sensor system. The system controller 160 may adjust the measurements performed for the calibration of the robot 170 to accommodate changes in the height, tilt, etc., of the substrate support 236 and / or the edge ring 212. In some examples, the calibration device 200 may include a handle 240 to assist in installing and removing the calibration device 200.

[0039] Figure 2C shows a test substrate 208 positioned off-center relative to the edge ring 212. Camera 202 captures images in individual FOVs 216, and system controller 160 analyzes the images to determine distances d1, d2, and d3 between various points on the outer periphery of the test substrate 208 and the edge ring 212. In one example, system controller 160 determines the coordinates (e.g., x, y coordinates) of each point on the outer periphery of the test substrate 208. For example, if camera 202 is positioned at a known fixed location within calibration apparatus 200, then each FOV 216 of camera 202 corresponds to a known portion of the x, y coordinate system. In other words, by measuring distances d1, d2, and d3, the corresponding coordinates of the three points on the outer edge of the test substrate 208 can be easily determined. System controller 160 can calculate the center 244 (e.g., x, y coordinates) of the circle corresponding to the test substrate 208 based on distances d1, d2, and d3 and the coordinates of each point. For example, the coordinates x, y of center 244 can be calculated using (x, y) = f(d1, d2, d3), where f(d1, d2, d3) corresponds to any function that calculates the center of the circle using three known points on the circle.

[0040] The center 248 of the edge ring 212 can be known (and / or calculated in a similar manner to the center 244 of the test substrate 208). The system controller 160 calculates the correction amount dR, dT based on the difference between the coordinates x, y of the center 244 of the test substrate 208 and the center 248 of the edge ring 212. For example, the correction amount dR, dT can be calculated according to (dR, dT) = f(x, y, R, T), where R, T corresponds to the target center position in the robot coordinate system. In other words, the system controller 160 associates the difference between the coordinates x, y of the center 244 of the test substrate and the center 248 of the edge ring 212 with the correction amount dR, dT to be applied to the target center position R, T of the robot 170. The system controller 160 provides the corrected R, T coordinates to the robot 170. The robot 170 can then retrieve the test substrate 208 and use the corrected R, T coordinates to replace the test substrate 208 on the substrate support. The determination of the center 244 of the test substrate 208, the correction of the R and T coordinates, and the retrieval and replacement of the test substrate 208 can be repeated until the center 244 of the test substrate 208 matches the center 248 of the edge ring 212.

[0041] In the example where the test substrate 208 includes reference markings 220, the system controller 160 is configured to analyze the images captured within each FOV 216 to compensate for mechanical tolerances related to the relative positioning of the calibration device 200, camera 202, edge ring 212, etc. The illustrative reference markings 220 include reference lines 252 and reference squares 256, as shown in FIG2D. Reference lines 252 correspond to lines on each radius of the test substrate 208. Therefore, reference lines 252 intersect the center 244 of the test substrate 208. The system controller 160 analyzes the captured images to identify reference lines 252 and measures individual distances d from the endpoints of reference lines 252 at the edges of the test substrate 208 to the edge ring 212. The system controller calculates the center 244 of the test substrate 208 (e.g., in the x, y coordinate system) based on the identified positions of reference lines 252 and the measured distances d1, d2, and d3.

[0042] A reference square 256 is provided to correct the pixel size of the camera 202 within each of the individual FOVs 216. For example, the reference square 256 has a known width (e.g., 1 x 1 mm, 2 x 2 mm, etc.). As shown, the reference square 256 comprises a 1 x 1 mm square and a 2 x 2 mm square. In other examples, more than two reference squares 256 may be provided. Furthermore, shapes other than the reference square 256 may be used.

[0043] The system controller 160 analyzes the captured image to determine the number of pixels within the width of each reference square 256. Since the size of the reference square 256 is known, the width of each individual pixel can be determined accordingly. For example, if a 1 x 1 mm reference square contains 116.46 pixels, the width of one pixel can be calculated as 1,000 / 116.46 or 8.587 micrometers. Similarly, if a 2 x 2 mm reference square contains 234.313 pixels, the width of one pixel can be calculated as 2,000 / 234.313 or 8.536 micrometers. Distances d1, d2, and d3 can then be accurately measured based on the calculated width of each pixel.

[0044] Referring now to Figure 3, an exemplary method 300 for a robot in a substrate processing system begins at 304. At 308, a calibration device is mounted on a processing chamber. For example, the calibration device includes one or more cameras configured to capture images of a processing chamber region including the edges and edge rings of the test substrate. At 312, the robot transfers the test substrate onto a substrate support within the processing chamber. At 316, the processing chamber is evacuated to a vacuum pressure. At 320, the calibration device (e.g., in response to a controller, such as system controller 160) captures one or more images of the edges of the test substrate and adjacent edges of the edge rings. By way of example only, the calibration device captures three images using separate cameras.

[0045] At 324, method 300 (e.g., using system controller 160) analyzes the captured image to determine the distance between the edge of the test substrate and the edge ring. At 328, method 300 (e.g., using system controller 160) determines the center of the test substrate based on the determined distance. For example, method 300 determines the coordinates (e.g., in the xy plane) of three points on the edge of the test substrate based on the determined distance and calculates the center of the test substrate accordingly. At 332, method 300 (e.g., system controller 160) determines whether the calculated center of the test substrate matches the center of the edge ring. If yes, method 300 determines that the robot calibration is complete and ends at 336. If no, method 300 continues to 340.

[0046] At 340, method 300 (e.g., using system controller 160) determines a correction amount dR, dT to correct the robot's R, T coordinates corresponding to the nominal center point. For example, method 300 determines the correction amount dR, dT based on the calculated difference between the center of the test substrate and the center of the edge ring. At 344, method 300 updates the robot's R, T coordinates according to the determined correction amount. At 348, method 300 (e.g., system controller 160) controls the robot to retrieve and replace the test substrate using the corrected R, T coordinates. Then, method 300 continues to 320 to repeat steps 320 to 332 until the correction is complete (i.e., until the calculated center of the test substrate matches the center of the edge ring).

[0047] Referring now to Figures 4A, 4B, 4C, and 4D, an illustration of an exemplary calibration device 400 according to the present invention is shown. In Figure 4D, the calibration device 400 is shown mounted on an exemplary processing chamber 404. The calibration device 400 includes a bottom cover plate 408, which is configured to be mounted on the upper end of the processing chamber 404. For example, the cover plate 408 may include bolt holes configured to align with and receive mounting bolts in various holes in the processing chamber 404. The cover plate 408 may include a groove 416 configured to compress and receive an annular seal (such as an O-ring) between the cover plate 408 and the processing chamber 404. The bottom surface of the cover plate 408 includes an opening 420 corresponding to a camera 424. The camera 424 is disposed between the bottom cover plate 408 and the upper plate 428 of the calibration device 400.

[0048] The foregoing description is illustrative in nature and is not intended to limit the scope of this disclosure, its application, or its uses. The broad indications of this disclosure can be implemented in various forms. Therefore, while this disclosure contains specific examples, other variations will become clearer when examining the drawings, specification, and the following claims, and the true scope of this disclosure should not be so limited. It should be understood that one or more steps of the method can be performed in different orders (or simultaneously) without altering the principles of this disclosure. Furthermore, while each of the embodiments described above has certain features, any one or more of these features described with respect to any embodiment of this disclosure may be implemented in any other embodiment and / or combined with features of any other embodiment (even if such combination is not described in detail). In other words, the embodiments are not mutually exclusive, and substitutions between one or more embodiments remain within the scope of this disclosure.

[0049] The spatial and functional relationships between components (e.g., modules, circuit elements, semiconductor layers, etc.) are described using various terms including “connection,” “joint,” “coupled,” “proximity,” “next to,” “above,” “over,” “below,” and “set.” Unless explicitly stated as “direct,” when describing the relationship between the first and second components in the foregoing disclosure, the relationship may be a direct relationship where there are no other intermediary components between the first and second components, or an indirect relationship (spatial or functional) where there are one or more intermediary components between the first and second components. As used herein, the phrase “at least one of A, B, and C” should be interpreted as meaning the logic of using non-exclusionary OR (A OR B OR C), and should not be interpreted as meaning “at least one of A, at least one of B, and at least one of C.”

[0050] In some embodiments, the controller is part of a system, which may be part of the examples described above. This system may include semiconductor processing equipment comprising (multiple) processing tools, (multiple) chambers, (multiple) processing platforms, and / or specific processing elements (substrate pedestals, gas flow systems, etc.). Such systems may be integrated with electronic equipment to control the operation of semiconductor wafers or substrates before, during, and after processing. The electronic equipment may be referred to as a "controller" and may control various elements or sub-components of (multiple) systems. Depending on processing requirements and / or system type, the controller may be programmed to control any of the processing disclosed herein, including the delivery of processing gases, temperature settings (e.g., heating and / or cooling), pressure settings, vacuum settings, power settings, radio frequency (RF) generator settings, RF matching circuit settings, frequency settings, flow rate settings, fluid delivery settings, position and operation settings, wafer transfer (into and out of tools connected or coupled to a specific system and other transfer tools, and / or load locks).

[0051] Broadly speaking, a controller can be defined as an electronic device having a number of integrated circuits, logic, memory, and / or software that receive instructions, issue instructions, control operations, initiate cleaning operations, and initiate endpoint measurements. Integrated circuits may include: chips in the form of firmware storing program instructions, digital signal processors (DSPs), chips defined as application-specific integrated circuits (ASICs), and / or one or more microprocessors, or microcontrollers that execute program instructions (e.g., software). Program instructions may be instructions communicated to the controller or system in the form of different individual settings (or program files) that define operating parameters for performing a specific process (on or on a semiconductor wafer). In some embodiments, the operating parameters may be part of a recipe defined by a process engineer to implement one or more processing steps during the manufacture of one or more of the following: (including: coatings, materials, metals, oxides, silicon, silicon dioxide, surfaces, circuits, and / or substrate grains).

[0052] In some embodiments, the controller may be part of, or coupled to, a computer integrated with, coupled to, or networked to the system, or a combination thereof. For example, the controller may be in all or part of a cloud-based or factory mainframe computer system that allows remote access to wafer processing. The computer enables the system to remotely access the system to monitor the current progress of manufacturing operations, examine the history of past manufacturing operations, examine trends or performance indicators from multiple manufacturing operations, change parameters for the current process, set processing steps after the current process, or start a new process. In some examples, a remote computer (e.g., a server) may provide process recipes to the system via a network, which may include a local area network or the Internet. The remote computer may include a user interface that allows access to, or programming of, parameters and / or settings, which are then transmitted from the remote computer to the system. In some examples, the controller receives instructions in the form of data that specify parameters for each processing step to be performed during one or more operations. It should be understood that parameters can be specifically targeted at the type of process to be performed and the type of tool to which the controller is configured to engage or control. Therefore, as mentioned above, the controller can be distributed, for example, by comprising one or more separate controllers connected in a network and operating toward a common purpose (e.g., the process and control described herein). An example of a distributed controller for this purpose would be one or more integrated circuits located on the chamber and communicating with one or more integrated circuits located remotely (e.g., at the work platform level, or as part of a remote computer), which together control the process on the chamber.

[0053] The exemplary system may include, but is not limited to, the following: plasma etching chambers or modules, deposition chambers or modules, spin wash chambers or modules, metal plating chambers or modules, cleaning chambers or modules, bevel edge etching chambers or modules, physical vapor deposition (PVD) chambers or modules, chemical vapor deposition (CVD) chambers or modules, atomic layer deposition (ALD) chambers or modules, atomic layer etching (ALE) chambers or modules, ion implantation chambers or modules, orbital chambers or modules, and any other semiconductor processing system that may be associated with or used in the manufacture and / or processing of semiconductor wafers.

[0054] As described above, depending on the (plural) processing steps to be performed by the tool, the controller may communicate with one or more of the following in the semiconductor manufacturing plant: other tool circuits or modules, other tool elements, cluster tools, other tool interfaces, nearby tools, adjacent tools, tools throughout the plant, main computer, another controller, or tools used in material transport that transport wafer containers to and from tool locations and / or loading ports.

[0055] 100: Substrate Processing System 102: Processing Chamber 104: Upper electrode 106: Substrate support 108:Substrate 109: Sprayer Head 110: Base Plate 112: Ceramic layer 114: Adhesive layer 116: Coolant passage 120: RF generation system 122: RF Voltage Generator 124: Matching and Delivery Network 130: Gas delivery system 132: Gas Source 132-1: Gas Source 132-2: Gas Source 132-N: Gas source 134: Valve 134-1: Valve 134-2: Valve 134-N: Valve 136: Mass Flow Controller 136-1: Mass Flow Controller 136-2: Mass Flow Controller 136-N: Mass Flow Controller 140: manifold 142: Temperature Controller 144: Heating element 146: Coolant assembly 150: Valve 152: Pump 160: System Controller 170: Robot 172: Load gate 176: Protective seals 180: Edge ring 184: Cover 200:Calibration equipment 202: Camera 204: Processing Chamber 206: Seals 208: Test substrate 212: Edge ring 216: Camera Field of View (FOV) 220: Reference Mark 224: Notch 228: Measuring device 232: Measuring device 236: Substrate support 240: Handle 244: Center 248: Center 252: Reference Line 256: Reference Square 300: Method 304: Steps 308: Steps 312: Steps 316: Steps 320: Steps 324: Steps 328: Steps 332: Steps 336: Steps 340: Steps 344: Steps 348: Steps 400:Calibration equipment 404: Processing Chamber 408: Bottom cover plate 416: Groove 420: Opening 424: Camera d1: Distance d2: Distance d3: Distance

Claims

1. A robot calibration system comprising: a calibration apparatus configured to be mounted on a substrate processing chamber, wherein the calibration apparatus includes at least one camera configured to capture an image including an outer edge of a test substrate and an edge ring surrounding the test substrate; and a controller configured to receive the captured image, analyze the captured image to measure the distance between the outer edge of the test substrate and the edge ring, calculate the center of the test substrate based on the measured distance, and calibrate a robot based on the calculated center of the test substrate, wherein the robot is configured to transport the substrate to and from the substrate processing chamber.

2. The robot correction system of claim 1, wherein the at least one camera corresponds to three cameras.

3. The robot calibration system of claim 1, wherein the robot calibration system includes a seal compressed between the calibration device and the substrate processing chamber, and wherein the controller is configured to evacuate the substrate processing chamber when the calibration device is mounted on the substrate processing chamber.

4. The robot correction system of claim 3, wherein the controller is configured to control the at least one camera to capture the image when the substrate processing chamber is in a vacuum.

5. The robot calibration system of claim 1, wherein the controller is configured to determine the width of a pixel in the field of view of the at least one camera, and to measure the distance between the outer edge of the test substrate and the edge ring based on the determined width of the pixels.

6. The robot calibration system of claim 5, wherein the test substrate includes at least one reference mark located in the field of view of the at least one camera, wherein the at least one reference mark has a known size, and wherein the controller is configured to determine the width of the pixels based on the known size.

7. The robot correction system of claim 6, wherein the at least one reference mark is a square, and the known dimension is the width of the square.

8. The robot calibration system of claim 1, wherein the test substrate includes a reference line aligned with the radius of the test substrate, and wherein the controller is configured to measure the distance between the outer edge of the test substrate and the edge ring at a position corresponding to the reference line.

9. The robot calibration system of claim 1, wherein the controller is configured to calculate a calibration amount based on the calculated center of the test substrate, and to calibrate the robot based on the calibration amount.

10. The robot calibration system of claim 9, wherein the controller is configured to calculate the calibration amount based on the calculated offset between the center of the test substrate and the center of the edge ring.

11. The robot calibration system of claim 1, wherein the robot is calibrated by updating the complex coordinates of the robot.

12. A method for calibrating a robot configured to transport a substrate to and from a substrate processing chamber having a calibration device mounted thereon, the calibration device having at least one camera, the method comprising: capturing an image using the at least one camera, the image including an outer edge of a test substrate and an edge ring surrounding the test substrate; analyzing the captured image to measure a distance between the outer edge of the test substrate and the edge ring; calculating a center of the test substrate based on the measured distance; and calibrating the robot based on the calculated center of the test substrate.

13. The method for calibrating a robot as claimed in claim 12, wherein the at least one camera corresponds to three cameras.

14. The method for calibrating a robot as claimed in claim 12 further includes evacuating the substrate processing chamber.

15. The method for calibrating a robot as claimed in claim 14 further includes controlling the at least one camera to capture the image when the substrate processing chamber is in a vacuum.

16. The method for calibrating a robot as claimed in claim 12 further comprises determining the width of a pixel in the field of view of the at least one camera, and measuring the distance between the outer edge of the test substrate and the edge ring based on the determined width of the pixels.

17. The method for calibrating a robot as claimed in claim 16, wherein the test substrate includes at least one reference mark located in the field of view of the at least one camera, wherein the at least one reference mark has a known size, and wherein the width of the pixels is determined based on the known size.

18. The method for calibrating a robot as claimed in claim 17, wherein the at least one reference symbol is a square, and the known dimension is the width of the square.

19. The method for calibrating a robot as claimed in claim 12, wherein the test substrate includes a reference line aligned with the radius of the test substrate, and wherein the distance between the outer edge of the test substrate and the edge ring is measured at a position corresponding to the reference line.

20. The method for calibrating a robot as claimed in claim 12 further comprises calculating a calibration amount based on the calculated center of the test substrate, and calibrating the robot based on the calibration amount.

21. The method for calibrating a robot as claimed in claim 20 further includes calculating the calibration amount based on the calculated offset between the center of the test substrate and the center of the edge ring.

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