Method for bonding and debonding two substrates

Abstract

This invention relates to a method, apparatus, and substrate stack for temporarily bonding a product substrate to a carrier substrate and for debonding the product substrate from the carrier substrate.

Description

Technical Field

[0001] This invention relates to a method for joining and dejoining two substrates according to a coordinated technical solution, and a corresponding substrate stacking and corresponding apparatus. Prior Technology

[0002] Advanced miniaturization across virtually all areas of microelectronics and microsystems technology provides a stable foundation for the development of all technologies, enabling an increase in the density of all types of functional units on a substrate. These functional units include, for example, microcontrollers, memory chips, MEMS, all types of sensors, and microfluidic components.

[0003] In recent years, the techniques used to increase the lateral density of these functional units have been greatly improved. In some subfields of microelectronics or microsystems technology, the lateral density of functional units has even reached a point where it is impossible to further increase it. In microchip manufacturing, the maximum achievable resolution of structures produced by lithography has been almost reached. Therefore, within a few years, physical and technological limitations will no longer allow for any further increase in the lateral density of functional units. For several years, the industry has been addressing this issue by developing 2.5D and 3D technologies. With these technologies, functional elements with the same or even different compositions can be aligned with each other, stacked, permanently connected, and interconnected using corresponding strip conductors.

[0004] One of the key technologies for implementing these structures is temporary bonding. Temporary bonding is understood to refer to a method by which substrates can be connected to each other so that they can be separated without damaging the substrates.

[0005] In the prior art, there are several methods for debonding / peeling two substrates (product substrate and carrier substrate). Most methods use so-called bonding adhesives to achieve a temporary, relatively easy-to-peel bond between the two substrates. Bonding adhesives are primarily polymers, specifically thermoplastics.

[0006] However, it has been found that using polymers as temporary bonding adhesives is disadvantageous, specifically due to the environmental pollution caused by cleaning chemicals and the cost of consumable materials. Furthermore, a drawback of all polymer temporary bonding adhesives is that their temperature resistance is much lower than other processing temperatures of the product substrate. Therefore, temporary bonding using polymers represents a technological limitation in the processing of product substrates.

[0007] Therefore, the problem of the present invention is to at least partially eliminate (specifically, to completely eliminate) the disadvantages listed in the prior art. Specifically, the problem of the present invention is to specify an improved method for joining and unjoining. Summary of the Invention

[0008] The current problem is solved by the features of a coordinated technical solution. Advantageous developments of the invention are specified in the sub-technical solutions. All combinations of at least two features indicated in the description, technical solutions, and / or drawings also fall within the scope of the invention. Values ​​within the mentioned ranges should also be disclosed as limiting values ​​and can be required in any combination.

[0009] This invention relates to a method for temporarily bonding a product substrate to a carrier substrate, comprising at least the following steps: - A metallization temporary bonding layer is formed on the product substrate and / or the carrier substrate. - The product substrate is bonded to the carrier substrate at the metallized temporary bonding layer.

[0010] The present invention further relates to a substrate stack, specifically a substrate stack produced using the method according to the present invention, comprising a product substrate and a carrier substrate, wherein the product substrate and the carrier substrate are connected by a metallized temporary bonding layer.

[0011] The temporary bonding layer is preferably the only layer used in the bonding and / or debonding method according to the present invention. Therefore, a further advantage is achieved compared to the prior art, where multiple polymer layers are typically used above each other, one for bonding and another for debonding.

[0012] The present invention further relates to an apparatus for temporarily bonding a product substrate to a carrier substrate, specifically using a method according to at least one of the preceding embodiments, wherein... - A metallization temporary bonding layer may be formed on the product substrate and / or the carrier substrate. - The product substrate can be bonded to the carrier substrate at the metallized temporary bonding layer.

[0013] In the following text, this metallized temporary bonding layer is also referred to as the metallization layer.

[0014] The metallization temporary bonding layer can be formed directly on the carrier substrate and / or directly on the product substrate. Alternatively, a protective layer can be disposed between the metallization temporary bonding layer and the product substrate.

[0015] The protective layer preferably has high reflectivity in order to protect the product substrate from debonding radiation.

[0016] Therefore, according to the present invention, the temporary bonding layer is made of metal or metal alloy.

[0017] In a preferred embodiment, the substrate is configured such that a protective layer is applied to the substrate surface of the product substrate prior to the metallization.

[0018] In another preferred embodiment, the temporary bonding layer is configured such that it is formed over the entire area (specifically, over the protective layer on the product substrate).

[0019] In another preferred embodiment, the temporary bonding layer is configured such that it is formed at some locations, and more preferably at the protrusions of the carrier substrate.

[0020] In another preferred embodiment, a protective layer is applied to the product substrate before the metallization temporary bonding layer is formed on the product substrate and / or the carrier substrate.

[0021] In another preferred embodiment, the engagement is configured to be performed thermally.

[0022] In another preferred embodiment, the carrier substrate is configured to be structured, wherein the carrier substrate includes protrusions and cavities, wherein the protrusions are stably connected to the product substrate via metal contacts, and the cavities are disposed between the protrusions.

[0023] In a further conceivable embodiment, a layer in which cavities are created by structuring is applied onto the carrier substrate.

[0024] For example, one can envision coating a polymer that can be easily structured by photolithography or imprinting.

[0025] The use of melt gels is also conceivable in order to produce bonds that are easy to imprint or structure but also very strongly cured, such as SiO2.

[0026] These cavities can be created particularly easily within this layer. Specifically, this carrier can remove the applied layer and is very easy to feed for reuse. By this removal, the metal deposited in these cavities will also be removed together in a very easy manner.

[0027] The cavities can be arbitrarily shaped and configured. However, preferably, the cavities have a geometry that is as simple as possible and configured in a regular manner.

[0028] The particularly desirable shape of the cavity wall profile is: - Rectangle, specifically square - Circle - Oval - triangle

[0029] Specifically, triangular shapes can be produced very easily by etching in (111) oriented silicon wafers.

[0030] The cavities are preferably configured along a two-dimensional rectangular (specifically square) grid.

[0031] In another embodiment of the invention, the cavity may be configured along a center-facing two-dimensional rectangle (specifically, a square grid).

[0032] The total volume of the cavity is preferably greater than 10 times, more preferably greater than 100 times, more preferably greater than 1000 times, most preferably greater than 10000 times, and most preferably greater than 100,000 times. This is because the temporary bonding layer melts, evaporates, or sublimates, and the gas volume is a multiple of the solid volume.

[0033] The depth of the cavity is between 1 nm and 100 μm, preferably between 10 nm and 50 μm, more preferably between 50 nm and 30 μm, and most preferably between 70 nm and 20 μm, and most preferably between 100 nm and 10 μm.

[0034] The lateral dimensions of such cavities (e.g., the diameter of a circular cavity or the side length of a rectangular cavity) are between 10 nm and 5 mm, preferably between 50 nm and 1 mm, more preferably between 100 nm and 500 μm, most preferably between 500 nm and 100 μm, and most preferably between 1 µm and 50 μm.

[0035] After bonding, the interconnecting substrate stack, which includes at least the carrier substrate, the metallized temporary bonding layer, and the product substrate, can be further processed.

[0036] The present invention further relates to a method for debonding a product substrate and a carrier substrate, wherein the product substrate and the carrier substrate are connected by a metallization temporary bonding layer to form a substrate stack, comprising at least the following steps: - The substrates are stacked and secured to the substrate holder. - Debonding radiation (specifically, a laser beam) penetrates the carrier substrate and is focused onto the metallized temporary bonding layer, thereby melting, evaporating, and / or sublimating the metallized temporary bonding layer. - Peel the product substrate from the carrier substrate.

[0037] The present invention further relates to an apparatus for debonding a product substrate and a carrier substrate, specifically using a method according to at least one of the foregoing embodiments, wherein the product substrate and the carrier substrate are connected by a metallized temporary bonding layer to form a substrate stack, wherein the apparatus includes at least: - A substrate holder, used to mount and secure the substrate stack. - A radiation source used to penetrate the carrier substrate and focus debonding radiation (specifically, a laser beam) onto the metallized temporary bonding layer, thereby melting, evaporating, and / or sublimating the metallized temporary bonding layer. - A peeling member, used to peel the product substrate from the carrier substrate.

[0038] Specifically, such peeling members may be mechanical peeling members, such as (for example) blades.

[0039] In a further embodiment of the invention, the stripping member may be a pressurized fluid flow between the two substrates, rather than the blade.

[0040] In a preferred embodiment of the invention, the peeling member is a substrate holder on which the product substrate and the carrier substrate are fixed. In a first embodiment of the invention, after complete disengagement according to the invention, a simple relative movement occurs between the two substrate holders, specifically oriented perpendicular to the surfaces of the substrates. In a second embodiment of the invention, at least one of the two substrate holders is tilted about a rotation axis, such that separation of the two substrates begins at the periphery. In a third embodiment of the invention, at least one of the substrate holders is designed to be not only tiltable but also flexible. In this case, the substrate holder is preferably a flexible plate. Then, one of the two substrates (preferably the carrier substrate) is continuously pulled out at the periphery when it is fixed to the flexible substrate holder. The stiffness of the flexible substrate holder allows for very precise control of the peeling process.

[0041] In a further, less desirable embodiment of the invention, the release members are substrate holders that can be displaced parallel to their fixing surface or the substrate surface. The two substrates are then separated by a shearing process. This embodiment is referred to in the prior art as a "slip-off" technique and is specifically for substrates temporarily bonded by a polymer bonding adhesive. In the prior art, the substrates, and thus the bonding adhesive, are heated by a heating device until they can be separated by the shearing process. However, with the method according to the invention, the shearing process can only function nondestructively if there are no further metal contact points between the product substrate and the carrier substrate. However, if only a few metal contact points exist between the product substrate and the carrier substrate, the shearing process can cause plastic deformation of these metal contact points, thus achieving nondestructive separation.

[0042] Specifically, the aforementioned stripping components can be combined with each other.

[0043] Preferably, the thermal conductivity of the carrier substrate is between 0.1 W / (m*K) and 5000 W / (m*K), more preferably between 1 W / (m*K) and 2500 W / (m*K), and even more preferably between 0.5 W / (m*K) and 1000 W / (m*K).

[0044] Furthermore, the substrate stack is preferably configured such that it is heated and / or cooled by heating and / or cooling.

[0045] Furthermore, the debonding radiation is preferably configured to be focused in a pulsed manner onto the metallized temporary bonding layer.

[0046] Furthermore, the configuration is preferably such that the energy input of the debonding radiation into the metallized temporary bonding layer is measured, and the radiation power of the debonding radiation is controlled.

[0047] Furthermore, the substrate is preferably configured such that at least the carrier substrate is transparent to the debonding radiation system. It is conceivable, even if not possible, that the product substrate is transparent to the debonding radiation system.

[0048] Furthermore, the configuration is preferably such that the molten and evaporated and / or sublimated metallized temporary bonding layer condenses and solidifies and / or resublimates in the cavity before the product substrate is peeled off from the carrier substrate.

[0049] Specifically, locally heated metal vapor is received in the surrounding cavity of the carrier substrate. The metal vapor may sublimate or first condense and then solidify in the cavity.

[0050] In other words, specifically, the temporary bonding layer is locally removed by laser radiation.

[0051] Especially superior lasers and their wavelengths are - YAG (1.64 µm) - Ho:YLF (2.05 µm) - Ho:YAG (2.09 µm) - Cr:ZnS

[0052] In a further optional procedure step, the carrier substrate can be measured to determine whether the metallization layer deposited in the cavity must be removed so that the carrier substrate can be reused. Thereafter, the carrier substrate can be used for the temporary bonding of a further product substrate. Simple Explanation of the Diagram

[0053] Further advantages, features, and details of the invention will be described below from preferred embodiments and illustrated by means of drawings. In the latter:

[0054] Figure 1 shows a schematic sketch of the substrate stacking according to the first embodiment of the present invention.

[0055] Figure 2 shows a schematic sketch of the substrate stack in the second embodiment during debonding according to the present invention, and

[0056] Figures 3a to 3c show schematic sketches of the carrier substrate in different embodiments.

[0057] In the drawings, identical components or components with the same function are represented by the same element symbol. For illustrative purposes, all sketches may be enlarged so that the drawings do not necessarily show the scale of the actual embodiments. Implementation

[0058] [Carrier substrate] []

[0059] These carrier substrates can have any shape, but are preferably circular. Specifically, the diameter of these substrates is standardized industry-standard. For wafers, these standard industry diameters are 1 inch, 2 inches, 3 inches, 4 inches, 5 inches, 6 inches, 8 inches, 12 inches, and 18 inches. These carrier substrates are adapted in size and shape to the product substrates so that the processing techniques employed are as straightforward as possible. Different substrate sizes mean that so-called bridging tools are constructed in a more complex manner than devices and tools for a single substrate size.

[0060] However, in principle, the present invention can process any substrate, regardless of its diameter. The carrier substrate used in the temporary bonding and debonding process according to the present invention can be configured as a wafer. The carrier substrate is preferably a glass substrate.

[0061] According to the present invention, it is conceivable to fix a non-circular substrate and panel, process the latter and peel it off from the carrier substrate using the described temporary bonding procedure.

[0062] The material of the carrier substrate can be a semiconductor material, specifically silicon. Advantageously, polycrystalline silicon wafers can be preferably used as the carrier substrate. In a particularly preferred embodiment of the invention, the carrier substrate is produced from technical glass.

[0063] The carrier substrate preferably has at least one of the following characteristics: - No particles and / or - CMOS compatibility and / or - Mechanical stiffness and / or - Suitable for the thermal conductivity of the substrate of this product, or higher, and / or - Heat resistance above the maximum processing temperature, and / or - Thermal stability above the maximum processing temperature, and / or - Minimal (preferably none) venting, including venting that can be described as low vapor pressure, thus suitable for high vacuum, and / or - Suitable for the thermal expansion of the substrate of this product, and / or - The transparency of radiation should be combined.

[0064] This transparency should be described by transmittance, which gives the ratio of transmitted radiation to incident radiation. However, this transmittance depends on the thickness of the irradiated object and is therefore not purely a material property. Therefore, the transmittance value is given relative to a length unit of 1 cm. For a given thickness of 1 cm and for a given wavelength, the material specifically has a transmittance greater than 70%, more preferably greater than 80%, still more preferably greater than 90%, best greater than 95%, and most preferably greater than 99%. This transparency is particularly preferably related to the wavelength of the debinding radiation.

[0065] Thermal conductivity is also important for the functionality of the carrier substrate, as the effects of debonding radiation, which is a form of localized heating, should dissipate quickly. The thermal conductivity of the carrier substrate is preferably between 0.1 W / (m*K) and 5000 W / (m*K), more preferably between 1 W / (m*K) and 2500 W / (m*K), and still more preferably between 0.5 W / (m*K) and 1000 W / (m*K).

[0066] In a particularly preferred embodiment of the carrier substrate, it is designed to be structured. The carrier substrate includes protrusions stably connected to the product substrate via metal contacts and recesses serving as channels or cavities between these protrusions. The percentage carrying area (i.e., the ratio of the determined area of ​​these protrusions to the total area of ​​the carrier substrate) can be determined as a characteristic factor of the carrier substrate's properties. The percentage carrying area of ​​the carrier substrate is preferably less than 80%, more preferably less than 75%, particularly preferably less than 50%, very particularly preferably less than 25%, and ideally less than 10%. However, the product substrate can be securely attached to the carrier substrate, allowing the substrate stack to be further processed individually without improper peeling.

[0067] The underlying concept behind the configuration of these cavities and raised protrusions is to achieve effective retention and rapid, efficient separation of the product substrate from the carrier substrate. To this end, the carrier substrate or the raised protrusions of the carrier substrate are structured such that only a pattern defining the metal connection points with the product substrate exists, without any two-dimensionally extended metallization layer.

[0068] Alternatively, in another embodiment of the carrier substrate, it is conceivable to create a full-area temporary metallic bond with the product substrate.

[0069] Furthermore, in the illustrated embodiment of the carrier substrate, it is preferably conceivable that, at the fully enclosed ring, specifically near the edge of the carrier substrate, a temporary metallization with the product substrate is formed, and the carrier substrate is further raised (preferably uniformly above the region inside the metallized ring) to support the product substrate in a dotted and / or small-area manner without metal contacts.

[0070] It is possible that not all protrusions are in contact with the metal of the product substrate, but rather they are distributed only at defined points at the peripheral edge of the substrate stack.

[0071] Therefore, according to the invention, it is more advantageous if the surfaces of the metallized regions are coplanar with the surfaces of the raised, non-metallized regions. According to the invention, this can be easily achieved by the fact that the metallization layer itself is formed in a small recess. For example, it is conceivable to form a complete annular groove at the periphery of the carrier wafer. According to the invention, the metallization layer is then formed only in this groove, while the raised areas inside the groove, intended to stabilize and support the product substrate, are not metallized. Different procedural steps involving metallizing only the groove while maintaining metallization in areas near the center will not be discussed further here. Those skilled in the art understand how to shield and protect the internal portions of the carrier substrate.

[0072] Due to this structure of the carrier substrate, during separation, the metal evaporated or liquefied beside these protrusions (specifically, dotted protrusions) can condense and solidify and / or sublimate in these cold chambers. Therefore, the material is removed from the temporary bonding layer in a targeted and localized manner. During the final phase transition of the temporary bonding layer into the solid phase, the metal is thus not re-welded and / or bonded. As a result, the substrate stack can be easily separated after all the bonding points have been de-identified.

[0073] In a particularly preferred embodiment of the carrier substrate, the protrusions have a flatness expressed as a total thickness variation (TTV) of less than 100 µm, preferably less than 10 µm, more preferably less than 1 µm, most preferably less than 100 nm, most preferably less than 10 nm, and most preferably less than 1 nm. Therefore, the product substrate can be held in a particularly flat and stable manner.

[0074] In another particularly preferred embodiment of the carrier substrate, the protrusions are formed as dome-shaped individual regions, thereby creating better point-like contact between the carrier substrate and the product substrate, and the self-aligned metallization layer preferably reduces the area of ​​temporary bonding metal contacts with capillary effect.

[0075] Furthermore, it is conceivable that the carrier substrate be treated with partial metal repulsion prior to metallization, so that only the desired protrusions are specifically wetted by immersion metallization.

[0076] Advantageously, it is conceivable that individual regions of the protrusions on the carrier substrate are adapted to the diameter of the debonding bundle. As a specific numerical example, specifically when the laser spot size is 30 micrometers in diameter, the protrusion can be configured as a region with a diameter of 30 micrometers, preferably 28 micrometers, and particularly preferably 25 micrometers.

[0077] Generally speaking, this means that the amount of bulge is less than 95% of the debonding spot size, preferably less than 90% of the debonding spot size, and especially more preferably less than 85% of the debonding spot size, so as to achieve fast, efficient and high-energy coupling during the separation of the substrate stack. [Methods of temporary connection] []

[0078] Preferably, it is conceivable to apply a protective layer to the product substrate prior to the temporary bonding on the surface of the substrate to be bonded. The formation of the protective layer on the product substrate can be performed separately in location and / or time from further procedural steps of the temporary bonding.

[0079] In a preferred embodiment, the protective layer, which acts as a diffusion barrier for the metallization layer, can protect the product substrate from the effects of the temporary bonding layer.

[0080] In a further preferred embodiment, the protective layer can protect the structured substrate surface of the product substrate, specifically by removably filling and covering the cavities.

[0081] In a further preferred embodiment of the protective layer, it can be used as a bonding agent between the product substrate and the metallization layer.

[0082] A metallization layer is applied to the surface of the prepared substrate to be bonded. In an alternative embodiment of the method, the metallization layer is applied to the protective layer.

[0083] In an alternative embodiment of the method according to the invention, the metallization layer is applied to the carrier substrate.

[0084] Low-melting-point metals or alloys, specifically eutectic alloys, can be advantageously used. Particularly advantageously, the metallized layer applied to the product substrate does not penetrate into the structure of the product substrate, thus preventing any doping or contamination from the method.

[0085] In a further preferred embodiment, the metallization layer may be composed of a metal or alloy of a permanent bonding layer used in further processing, such that the diffusion of the metallization layer does not have a damaging effect on the product substrate.

[0086] Specifically, CMOS-compatible metals and / or alloys can be used.

[0087] Specifically, the metallization layer may contain the following compounds or elements: - Metals, specifically Cu, Ag, Au, Al, Fe, Ni, Co, Pt, W, Cr, Pb, Ti, Ta, Zn, Sn. - Compounds, specifically nitride compounds, specifically AlN, GaN, TiN, and TaN.

[0088] For the temporary bonding layer of the metal, it is preferable to select a metal and / or alloy with sufficient stability for processing that also has a sufficiently low melting temperature.

[0089] As an alloy, using a eutectic alloy as the metallization layer is particularly advantageous.

[0090] When using an alloy with a eutectic concentration, this concentration can be generated during the formation of the metallization layer or adjusted during the bonding process. A characteristic of eutectic alloys is that they have the lowest melting point among all possible alloys that can be produced by variations in alloy composition. The eutectic material completely melts above the eutectic temperature (the temperature at which the liquid and solid phases of the eutectic material are in equilibrium). The resulting eutectic concentration of liquid phase wets the surfaces of the undiluted areas of the two substrates, bonding them together. During the curing process, the liquid phase solidifies into the eutectic material and forms a bonding layer serving as a temporary bonding layer between the two substrates.

[0091] According to the present invention, the formation of the metallization layer can specifically be conceived of applying an alloy component to the product substrate and an alloy component to the carrier substrate.

[0092] According to the present invention, specifically, it is conceivable that the metallization layer is applied to the product substrate as a sequence of layers of metals and / or alloys different from the alloy content and / or as the complete metallization layer.

[0093] According to the present invention, specifically, in an alternative embodiment of the method, the metallization layer may be applied to the carrier substrate as a layer sequence of the alloy components and / or as the complete metallization layer.

[0094] Specifically, it should be noted that the resulting layers (i.e., the protective layer and at least one metallization layer) should not exhibit any aging and / or corrosion at room temperature and in a normal atmosphere, so that the third process step can be performed in the best manner. Alternatively, the metallized substrate may be stored protectively in an inert atmosphere and / or a vacuum.

[0095] Electrochemical deposition processes such as electroplating, vapor deposition, sputtering, and chemical vapor deposition (CVD) are particularly suitable as techniques for applying this metallization layer.

[0096] In a further procedural step, during a temporary bonding process for metal temporary bonding, the product substrate and the carrier substrate are specifically thermally bonded together. According to the invention, specifically, this temporary bonding can be performed in a evacuated bonding chamber.

[0097] In a preferred embodiment, the temperature of the temporary bonding process can be much lower than the further processing temperature of the product substrate, in order to specifically slow down or better prevent improper diffusion processes.

[0098] According to the present invention, it is particularly advantageous that the use of metal-metal bonding reduces particulate contamination of the substrate, especially particulate contamination from organic residues.

[0099] According to the present invention, it is particularly advantageous that the molten metal temporary bonding layer itself absorbs particles as inclusions, thereby achieving better bonding quality.

[0100] Specifically, according to the present invention, the metal-metal temporary bonding can be conceived as being performed as transient liquid phase (TLP) bonding.

[0101] Advantageously, according to the invention, specifically, it is conceivable to apply a metallization layer for temporary bonding on the carrier substrate, and to create the temporary bonding between the metallization substrate surface of the carrier substrate and the protective layer of the product substrate.

[0102] Specifically, according to the present invention, it is also conceivable to apply a metallization layer for the temporary bonding on the carrier substrate, and to create the temporary bonding between the metallization substrate surface of the carrier substrate and the substrate surface of the product substrate to be bonded.

[0103] Specifically, according to the invention, it is conceivable that the utilized metal joints are joined together in a fusion bonding process similar to a hybrid bonding process, followed by heat treatment to produce the temporary bond. The fusion bonding primarily occurs on the surface of non-metallic, non-organic materials. Hydrogen bridging connections can be formed on the surface portions of the products and carrier substrates (specifically, the tightly connected surface portions), thereby protecting the substrates and allowing them to be transported for further processing, such as heat treatment. The fusion bonding itself serves only for pre-fixation and ensures that the joined metal regions are held in place. This pre-fixation is referred to as pre-bonding in the prior art.

[0104] Pre-bonding describes the process of bonding two substrates together individually using van der Waals forces. This bonding process primarily occurs between silicon substrates and / or silicon oxide substrates. The resulting bond is thus called pre-bonding because it is a preliminary step in further interconnection. In the semiconductor industry, when it is found after pre-bonding that the two substrates are not optimally aligned or even improperly aligned, it is often desirable to release the (temporary) connection created by the pre-bonding. The two substrates connected by pre-bonding can then be (usually without damage) separated from each other again.

[0105] In other words, a fusion bond is formed on the non-metallic surface portions between the product substrate and the carrier substrate as a pre-bonding for the initial fixation of the substrate stack.

[0106] Next, the two-dimensional extended metallized surface portion of the carrier substrate can be temporarily metallized with the product substrate during heat treatment.

[0107] A method for fusing and bonding a product substrate and a carrier substrate according to the present invention comprises the following procedural steps in an illustrative embodiment:

[0108] In the first step of the illustrative method, the surfaces of the product substrate and / or the carrier substrate to be linked are prepared and structured.

[0109] In the second process step, specifically, the surfaces of the product substrate and carrier substrate to be connected are activated by plasma treatment in a plasma chamber.

[0110] In the third step of the process, the surfaces to be bonded are rinsed with DI water. This also removes any particles that are generated.

[0111] In the fourth process step, the product substrate and the carrier substrate are aligned with each other at least mechanically.

[0112] In the fifth process step, the product substrate and the carrier substrate are brought into contact with each other at at least one point, thereby initiating a bonding wave. The passage of this bonding wave is pre-bonded to the substrate stack.

[0113] In the sixth process step, the stack of substrates, including the product substrate and the carrier substrate, undergoes heat treatment to create a temporary metal-metal bond. The bonding force (vandal force) of this pre-bond is less than the holding force of the temporary metal bond layer.

[0114] Unlike conventional hybrid bonding techniques, the permanent two-dimensional extension connection of the surface portions of these non-metallic substrates will not occur in this temporary bonding process.

[0115] The basic concept of the temporary bonding method described herein is to generate a substrate stack, which consists of at least the carrier substrate, the metal temporary bonding layer and the product substrate.

[0116] In other words, a substrate stack is produced using the disclosed temporary bonding method, wherein the temporary bonding layer is a metal or metal alloy layer, and wherein the temporary bonding layer in the temporary bonding method according to the invention can be specifically removed from the product substrate without residue or particles. A further advantage is that the substrates of the substrate stack can absorb greater processing forces than the polymer interlayer. By means of the separation process described later, the substrate stack can be separated with minimal force and / or minimal deformation and / or minimal stress. Furthermore, it is advantageous that solvents and / or chemicals (in other words, wet chemicals) are not required for separation.

[0117] Therefore, the product substrate, which is protected and supported as part of the substrate stack, can be further processed in a simpler, more material-friendly, and more cost-effective manner than substrate stacks fixed with adhesive polymers. [De-joining method] []

[0118] The method for separating the carrier substrate from the product substrate, in the illustrated embodiment, includes the following steps, specifically in the following order:

[0119] In the first procedure step, the temporarily joined substrates are stacked and fixed on the substrate holder.

[0120] These substrate holders include fixing members. These fixing members are used to fix the substrates. The fixing members may be the following: 1. Mechanically fixed components, specifically 1.1 Fixture, 2. Vacuum-fixed components, specifically possessing 2.1. Individual controllable vacuum orbits, 2.2. Interconnected vacuum orbits, 3. Electrically fixed components, specifically 3.1. Static electricity fixing components, 4. Magnetic fixing components, 5. Adhesive fastening components, specifically gel-pak fastening components, and / or 6. Fixing components with a viscous (in other words, controllable) surface.

[0121] These fixed components are specifically electronically controllable.

[0122] The vacuum holding member is a preferred type of fixation. The vacuum holding member preferably includes a plurality of vacuum tracks located on the surface of the substrate holder. These vacuum tracks are preferably individually controllable. In a technically preferred application, several vacuum tracks are combined to form vacuum track segments, which are individually controllable, i.e., can be evacuated or immersed individually. However, each vacuum segment is independent of the others. Therefore, the possibility of forming individually controllable vacuum segments is obtained. These vacuum segments are preferably annular. Therefore, the substrate (specifically, the product substrate) can be calibrated, radially symmetrically fixed, and / or released from the sample holder, specifically from the inside out.

[0123] In the second process step, at least one beam of energy (specifically, a laser beam) having at least one wavelength penetrates the carrier substrate and is focused on the metal temporary bonding layer, and the temporary bonding layer is thus melted and evaporated or sublimated.

[0124] In an alternative embodiment, multiple beams may be introduced in parallel to input energy into the temporary bonding layer.

[0125] In a preferred embodiment, the substrate stack on the substrate holder can be brought to a specific temperature for cooling or heating. Specifically, this allows for a larger thermal gradient to be achieved for crack formation. Furthermore, the advantage of temperature treatment (specifically cooling) is that the gaseous products of debonding radiation can be condensed and / or sublimated more quickly.

[0126] The energy input for the phase transition of the metal temporary bonding layer is preferably introduced into the temporary bonding layer in a pulsed manner. This reduces improper overall heating of the substrate stack.

[0127] The energy input specifically penetrates directly into the temporary bonding layer, at least primarily through the carrier substrate, which is transparent to the debonding radiation system. Therefore, any doped product substrate and / or any product substrate metallized in a non-transparent manner for use in the debonding bundle can be separated.

[0128] According to the invention, it is particularly advantageous to continuously measure the reflected radiation during the energy input of the debonding radiation into the temporary bonding layer. Therefore, the radiation power of the debonding device can be adjusted, specifically, in real time. Furthermore, the amount of reflected radiation provides information about the localized separation that has occurred. The proportion of the reflected radiation changes during the debonding process.

[0129] In the third process step, specifically, locally heated metal vapor in the deeper surrounding cavity of the carrier substrate is resublimated or condensed and solidified.

[0130] In an alternative embodiment, the locally heated metal vapor in the deeper surrounding cavity of the carrier substrate may first condense and then solidify.

[0131] In other words, in the third procedure step, the temporary bonding layer is locally removed by pulsed laser radiation.

[0132] The carrier substrate is configured such that the metal vapors are delivered into the cavities in a flow-optimized manner, and the resublimation or condensation and solidification are therefore controlled processes rather than physical effects of free will.

[0133] The following actively adjustable parameters can specifically affect this: - The layout of the carrier substrate (percentage bearing area, shape and position of the cavity, pressure in the cavity where the substrates are stacked) and / or - The energy input of the de-junction radiation (time, wavelength, energy density, laser spot area as parameters) and / or - The total temperature of the substrate stack and / or the temperature gradient between the light spot heated by the debonding radiation on the protrusion on the carrier substrate and the bottom of the cavity.

[0134] To influence the calibration process, according to the invention, specifically, it is conceivable to cool one side of the substrate stack while heating the other side. Specifically, the product substrate can be heated, and simultaneously, specifically, the carrier substrate can be cooled by rinsing with dry ice or liquid nitrogen to locally influence the calibration condensation and / or resublimation.

[0135] The removed metallization layer is specifically embedded in the cavities of the carrier substrate.

[0136] The protective layer applied to the substrate of the product specifically absorbs a portion of the metallization layer that is resublimated or condensed and cured.

[0137] In the fourth process step, the carrier substrate and the product substrate are appropriately separated from each other.

[0138] In the fifth optional procedure step, the carrier substrate can be measured to determine whether the deposited metallization layer should be removed. This carrier substrate can then be used for temporary bonding of a further product substrate.

[0139] This method can be performed automatically in the apparatus. For this purpose, these procedural steps can be stored as a recipe and executed.

[0140] A formulation is a set of optimized values ​​for parameters that are functionally or procedurally related. Using a formulation ensures the reproducibility of a production sequence. [Temporary metal bonding device] []

[0141] The device used in the temporary joint according to the present invention is a connector for temporary metal joints.

[0142] Specifically, the functionally relevant parts of this temporary connector can be defined in the modular design as including the following modules: - Joining module, - Alignment module, - Cleaning module, - Activate module, - Metallized module, - Coating module, - Mobile devices, and / or - Specifically, a compressed air or vacuum supply module.

[0143] The temporary bonding method according to the present invention is performed in the bonding module. For this purpose, the substrates are preferably held securely on the substrate holder and thermally bonded. Thus, functional integration of the thermal bonding chuck and the substrate holder is possible.

[0144] According to the invention, specifically, it can be conceived that a permanent engagement device performs the temporary engagement according to the invention.

[0145] For temporary bonding, similar to hybrid bonding, the alignment module can produce pre-bonding, and the bonding module (such as a temperature-controlled oven) can specifically stack multiple substrates in a batch while simultaneously bonding the metal together.

[0146] The alignment accuracy between the product substrate and the carrier substrate can be achieved through mechanical alignment or, specifically, optical alignment of the substrate edges. In some cases, alignment can also be performed using alignment marks on the substrates and / or substrate holders.

[0147] The alignment accuracy between the product substrate and the carrier substrate, relating to the center point and / or the periphery and / or alignment marks of the substrates, is less than + / -150 micrometers, preferably less than + / -100 micrometers, particularly preferably less than + / -50 micrometers, very particularly preferably less than + / -25 micrometers, in the best case less than + / -10 micrometers, and in the ideal case less than + / -1 micrometer.

[0148] According to the present invention, it is particularly advantageous that the bonding device that can create a permanent metal bond between substrates can also be used for permanent metal bonding.

[0149] In a temporary bonder for metal temporary bonding, the protrusions of the carrier substrate are specifically metal bonded and thus connected to the corresponding areas of the product substrate. In other words, a substrate stack is created in the temporary bonder, which uses the metal temporary bonding layer to connect the protrusions of the carrier substrate to the product substrate for further processing of the product substrate.

[0150] The bonding force required to bond the product substrate to the carrier substrate depends on the technically required substrate size, and / or the metallization layer and / or the metallized bonding surface.

[0151] A bonding force between 10 N and 100 kN can be used, preferably between 10 kN and 90 kN, and particularly preferably between 30 kN and 80 kN. This bonding force is specifically used for good adhesion between the substrates. Higher bonding forces have proven advantageous for metal bonding systems in which the extract of the metallization layer can form a thin natural oxide layer that can crack with the bonding force. [A device for disengaging temporary metal joints] []

[0152] The device used for decoupling according to the present invention is a decoupling device for temporary metal joints.

[0153] The de-joint used for temporary metal bonding can be specifically described as having a modular design. If the de-joint is configured as an individual device without modules, then the module name is considered a characteristic of individual functional groups and / or components.

[0154] Specifically, at least the following modules may exist in this de-joiner: - De-joining module, - Further modules.

[0155] These further modules may include the following modules: - Cleaning module, specifically used to remove the protective layer. - A cleaning module used to remove excess metallization from the carrier substrate. - A module for carrier flip-flops, specifically a strip or laminate module for fixing a thin product substrate. - Measurement modules for metallization layers, and / or - A separate laser module for this debonding module.

[0156] According to the invention, specifically advantageously, the decoupling radiation can be generated by a separate laser module, and only "cold" radiation is coupled to the decoupling module. This reduces parasitic heat sources in the device. The laser module (with a suitable package of its optical components) can be moved into the ash chamber of the cleanroom, where proper cooling of the radiation source can be ensured. Therefore, the precision-air-conditioned cleanroom is not heated, and waste heat can thus be better removed from the device.

[0157] The debonding module's radiation source generates the debonding radiation, specifically laser radiation. However, alternatively, an electron beam can be used as the debonding radiation.

[0158] The use of different electromagnetic sources for generating decoupling bundles for electromagnetic radiation is disclosed, which can be used for stripping according to the invention: - Microwave source - Infrared source, specifically an infrared source that emits mid-infrared (MIR) light. - A source of visible light. - UV source, and / or - X-ray source.

[0159] Specifically, a source can be conceived that is suitable for achieving the separation of the carrier substrate according to the present invention, specifically by means of electromagnetic waves to dissolve the metal interconnect layer from the product substrate, preferably by sublimation.

[0160] A further aspect of the invention lies in the fact that metals have a very high absorption capacity for infrared radiation. Therefore, the temporary metal bonding layer is very suitable for destruction by infrared lasers.

[0161] The electromagnetic radiation from this source can be incoherent or coherent. Sources that emit coherent electromagnetic radiation (lasers) are preferred. Microwave sources that emit coherent microwave beams are called magnesium lasers.

[0162] In the following text of the patent specification, coherence is described as spatial and / or temporal coherence.

[0163] The wavelength of the debinding radiation is between 10 nm and 10 mm, preferably between 150 nm and 200 micrometers, especially preferably between 400 nm and 30 micrometers, and very especially preferably between 1 micrometer and 10 micrometers.

[0164] According to the invention, it is particularly advantageous that the maximum absorbance of the temporary metal bonding layer and the wavelength of the radiation source used for the debonding radiation are coordinated with each other, so that the debonding can be performed effectively. According to the invention, it is also advantageous that the maximum absorbance of the temporary metal bonding layer, the maximum transmittance of the carrier substrate, and the wavelength of the debonding radiation are coordinated with each other. For this purpose, those skilled in the art can use the known Lambert-Beer relation.

[0165] According to the present invention, if the decoupling radiation is not used but the radiation source remains on, the decoupling radiation having a continuously operating radiation source can be interrupted and / or transmitted to the receiver by an electromechanical chopper and / or a mirror system.

[0166] In the case of switchable radiation sources such as LED lasers, the pulse duration of the decoupling radiation can be electronically controlled and / or adjusted.

[0167] The debonding radiation is directed in the debonding device to the metal connection areas of the substrate stack.

[0168] The key physical parameter of the electromagnetic radiation used is its intensity. This intensity is indicated in watts. Specifically, the intensity of this electromagnetic radiation is greater than 0.1 watts, preferably greater than 1 watt, more preferably greater than 100 watts, most preferably greater than 1000 watts, and most preferably greater than 10 kilowatts.

[0169] In this dejunction device, the intensity profile (i.e., the intensity progression along the direction of the beam pattern passing through the dejunction radiation) can be arbitrarily adjusted by optical elements. A preferred intensity profile is: - Gaussian profile, - Rectangular section, - Triangular section, and / or - Elliptical cross section, specifically a circular cross section.

[0170] Specifically, the laser power (which can be continuously delivered to the substrate stack) measured in terms of luminescence power (specifically, radiant power) in the temporary bonding layer is specifically at least 5 W, preferably greater than 10 W, more preferably greater than 15 W, most preferably greater than 17 W, and most preferably greater than 30 W.

[0171] The preferred wavelength range of the laser is between 100 nm and 10,000 nm, more preferably between 250 nm and 1100 nm, even more preferably between 270 nm and 430 nm, and most preferably between 280 nm and 380 nm.

[0172] In other embodiments, the preferred wavelength range of the laser is between 1,000 nm and 10,000 nm.

[0173] In a particularly preferred embodiment, the wavelength of the laser can be adjusted and / or filtered by a frequency converter (specifically, an acousto-optic modulator, specifically a Bragg unit).

[0174] In a further preferred embodiment of the device, the laser beam includes at least one wavelength selected from 1064 nm, 420 nm, 380 nm, 343 nm, 318 nm, 308 nm, and 280 nm.

[0175] Specifically, it is particularly advantageous to use laser beams with at least two wavelengths in order to enable the specific photochemical and photothermal processes combined in the temporary bonding layer.

[0176] In a particularly preferred embodiment of the device, the light source is a diode laser.

[0177] The total energy of the laser radiation per substrate is specifically set between 0.01 mJ and 5000 kJ, preferably between 0.1 mJ and 4000 kJ, and even more preferably between 100 mJ and 2000 kJ.

[0178] The laser beam can operate in either continuous or pulsed mode.

[0179] The pulse frequency is specifically set between 0.1 Hz and 300 MHz, preferably between 100 Hz and 500 kHz, particularly preferably between 10 kHz and 400 kHz, and very particularly preferably between 100 kHz and 300 kHz.

[0180] The number of pulses per substrate stack depends on the total energy required, preferably greater than 1 million pulses, preferably greater than 3 million pulses, especially more than 5 million pulses, and very especially more than 6 million pulses.

[0181] The energy of each radiation pulse impacting the substrate stack is set between 0.1 nJ and 1 J, preferably between 1 nJ and 900 µJ, and particularly preferably between 10 nJ and 500 µJ.

[0182] The irradiation area per pulse is specifically between 1 µm² and 100,000 µm², preferably between 10,000 µm² and 50,000 µm², particularly preferably between 1,000 µm² and 40,000 µm², and very particularly preferably between 2,500 µm² and 26,000 µm².

[0183] Those familiar with this technology know that the synonyms for the irradiation area are spot size and laser spot size.

[0184] Larger areas of irradiation can be performed over the entire region or via a scanning procedure. If the regions having the temporary bonding layer are substantially the same as the irradiated area, direct, non-scanning irradiation occurs. If the regions having the temporary bonding layer are larger than the irradiated area, scanning irradiation is preferred.

[0185] The shape of the irradiated area is specifically circular, elliptical in other preferred embodiments, and rectangular in a particularly preferred embodiment.

[0186] The decoupling radiation can be better focused. The length of the focal point can be changed, specifically greater than 0.1 mm, preferably greater than 1 mm, more preferably greater than 5 mm, most preferably greater than 10 mm, and especially preferably greater than 20 mm.

[0187] According to a further development of the present invention, a pulsed mode operation for a source of electromagnetic debonding radiation is provided. The relatively high intensity and power density can cause heat transfer from the temporary bonding layer to the substrate. To minimize this heat transfer, a pulsed electromagnetic beam is preferably used. The pulse duration is specifically less than 10 seconds, preferably less than 1 second, more preferably less than 1 microsecond, most preferably less than 1 nanosecond, and most preferably less than 1 picosecond.

[0188] The purpose of the pulsed mode operation of the debonding radiation is to rapidly, locally, and pointwise heat the temporary bonding layer, so that the metal temporary bonding layer is preferably sublimated, then melted first, and then transferred into the gas phase.

[0189] By guiding the debonding bundle, the temperature profile, specifically the temperature gradient, can be affected. Through this temperature profile, the sublimation or condensation and solidification of the dissolved temporary bonding layer are locally fixed in a standardized manner.

[0190] Therefore, the debonding bundle can also be guided to fix the temporary bonding layer for sublimation, condensation, or solidification.

[0191] Figure 1 shows a schematic sketch of the substrate stack 6 according to the present invention. The substrate stack 6 includes a structured carrier substrate 1, a temporary bonding layer of metal in particular 2, a protective layer 3, and a product substrate 4.

[0192] In this embodiment, the temporary bonding layer 2 is applied as a metallization layer over the entire area of ​​the indicated protective layer 3, which may be an atomically thin or molecularly thin barrier layer.

[0193] Figure 2 shows a schematic sketch of another substrate stack 6' during debonding according to the present invention. In this embodiment of the substrate stack 6', the metallization layer 2' is applied only to the protrusion 1'e of the carrier substrate 1', such that the metallization layer 2' only represents the marked portion of the temporary bonding layer. In other words, the temporary bonding layer 2' has been applied in the form of islands. The protective layer 3' separates the product substrate 4' from the metal temporary bonding layer 2'.

[0194] The bonding beam 5 penetrates the carrier substrate 1' and hits a point on the temporary bonding layer 2' applied to the protrusion 1'e.

[0195] It is not indicated that the temporary bonding layer 2' moves into the surrounding cavity 1'k of the carrier substrate 1'. The convergence of the bonding bundle 5 symbolizes both the calibration deflection of the bonding bundle 5 and the focusing.

[0196] Figure 3a illustrates a further embodiment of the transparent carrier substrate 1'' according to a specific aspect of the present invention. The carrier substrate 1'' includes a plurality of protrusions 1''e, which can both support the product substrate (not shown) and form contact points for a temporary bonding layer (not shown).

[0197] In order to achieve uniform force absorption, the protrusions 1''e can be specifically uniformly linearly distributed on the carrier substrate or distributed in a grid array on the carrier substrate. The cavity 1''k of the carrier substrate 1'' is located between the protrusions 1''e.

[0198] Deposition of residual material from a temporary bonding layer after sublimation, condensation, and solidification is not indicated.

[0199] Figure 3b illustrates another embodiment of the transparent carrier substrate 1''' according to a specific embodiment of the present invention. The carrier substrate 1''' includes a plurality of protrusions 1'''e, which can both support a product substrate (not shown) and form contact points for a temporary bonding layer (not shown). In this embodiment of the carrier substrate 1''', the protrusions 1'''e have convex surfaces, enabling point-like contact with the product substrate (not shown), specifically. Compared to the embodiment in Figure 3a, the effective area of ​​the temporary bonding layer (not shown) is reduced due to the capillary effect of the convex protrusions 1'''e. On the one hand, material savings are achieved with the temporary bonding layer. On the other hand, effective debonding is achieved due to the reduced size of the support area.

[0200] Figure 3c illustrates a further embodiment of the transparent carrier substrate 1 IV according to a specific aspect of the present invention. The carrier substrate 1 IV includes a plurality of protrusions 1 IVe, which can both support a product substrate (not shown) and form contact points for a temporary bonding layer (not shown). In this embodiment 1 IV of the carrier substrate, the protrusions 1 IVe are dot-shaped and are surrounded by cavities 1 IVk. The uniform distribution of the protrusions 1 IVe on the carrier substrate 1 IV is particularly advantageous in this embodiment, wherein the percentage of the bearing area can be smaller compared to other embodiments 3a and 3b.

[0201] 1: Carrier substrate 1': Carrier substrate 1'': Carrier substrate 1''': Carrier substrate 1 IV: Carrier substrate 1e: bulge 1'e: bulge 1''e: bulge 1'''e: bulge 1 IVe: bulge 1k: cavity 1'k: cavity 1''k: cavity 1'''k: cavity 1 IVk: cavity 2: Temporary bonding layer 2': Temporary bonding layer 3: Protective layer 3': Protective layer 4: Product substrate 4': Product substrate 5: Debonding radiation 6: Substrate stacking 6': Substrate stacking

Claims

1. A method for temporarily bonding a product substrate (4, 4') to a carrier substrate (1, 1', 1'', 1''', 1IV), comprising at least the following steps: forming a metallized temporary bonding layer (2, 2') on the product substrate (4, 4') and / or the carrier substrate (1, 1', 1'', 1''', 1IV); bonding the product substrate (4, 4') and the carrier substrate (1, 1', 1'', 1''', 1IV) at the metallized temporary bonding layer (2, 2'). The carrier substrate (1, 1', 1'', 1''', 1IV) is formed in a structured manner, wherein the carrier substrate (1, 1', 1'', 1''', 1IV) includes protrusions (1''e, 1'''e, 1IVe) and cavities (1''k, 1'''k, 1IVk), wherein the protrusions (1''e, 1'''e, 1IVe) are stably connected to the product substrate (4, 4') via metal contacts and the cavities (1''k, 1'''k, 1IVk) are disposed between the protrusions (1''e, 1'''e, 1IVe).

2. The method of claim 1, wherein the temporary bonding layer (2) is formed over the entire area, specifically on a protective layer (3, 3') on the product substrate (4, 4').

3. The method of claim 1, wherein the temporary bonding layer (2') is formed at some locations, preferably at the protrusions (1''e, 1'''e, 1IVe) of the carrier substrate (1', 1'', 1''', 1IVe).

4. The method of any one of claims 1 to 3, wherein a protective layer (3, 3') is applied to the product substrate (4, 4') before the metallization temporary bonding layer (2, 2') is formed on the product substrate (4, 4') and / or the carrier substrate (1, 1', 1'', 1''', 1IV).

5. The method of any one of claims 1 to 3, wherein the connection is performed thermally.

6. A substrate stack (6, 6'), specifically produced by any one of claims 1 to 5, the substrate stack comprising a product substrate (4, 4') and a carrier substrate (1, 1', 1'', 1''', 1IV), characterized in that the product substrate (4, 4') and the carrier substrate (1, 1', 1'', 1''', 1IV) are connected by a metallized temporary bonding layer (2, 2').

7. An apparatus for temporarily bonding a product substrate (4, 4') to a carrier substrate (1, 1', 1'', 1''', 1IV), specifically using the method of any one of claims 1 to 5, wherein a metallized temporary bonding layer (2, 2') can be formed on the product substrate (4, 4') and / or the carrier substrate (1, 1', 1'', 1''', 1IV), and the product substrate (4, 4') and the carrier substrate (1, 1', 1''', 1''', 1IV) can be bonded at the metallized temporary bonding layer (2, 2').

8. A method for debonding a product substrate (4, 4') from a carrier substrate (1, 1', 1''', 1IV), wherein the product substrate (4, 4') and the carrier substrate (1, 1', 1''', 1''', 1IV) are connected by a metallized temporary bonding layer (2, 2') to form a substrate stack (6, 6'), the method comprising at least the following steps: mounting and securing the substrate stack (6, 6') on a substrate holder; penetrating the carrier substrate and focusing a debonding radiation (5), specifically a laser beam, onto the metallized temporary bonding layer (2, 2'), thereby melting, evaporating and / or sublimating the metallized temporary bonding layer (2, 2'); and peeling the product substrate (4, 4') from the carrier substrate (1, 1', 1''', 1IV). The metallized temporary bonding layer (2, 2') that is melted, evaporated and / or sublimated is condensed and solidified and / or resublimated in the cavity (1k, 1'k, 1''k, 1'''k, 1IVk) before the product substrate (4, 4') is peeled off from the carrier substrate (1, 1', 1''', 1IV).

9. The method of claim 8, wherein the thermal conductivity of the carrier substrate (1, 1', 1'', 1''', 1IV) is between 0.1 W / (m*K) and 5000 W / (m*K), more preferably between 1 W / (m*K) and 2500 W / (m*K), and even more preferably between 0.5 W / (m*K) and 1000 W / (m*K).

10. The method of claim 8 or 9, wherein the substrate stack (6, 6') is heated and / or cooled by heating and / or cooling.

11. The method of claim 8 or 9, wherein the debonding radiation (5) is focused in a pulsed manner onto the metallized temporary bonding layer (2, 2').

12. The method of claim 8 or 9, wherein one energy input of the debonding radiation (5) into the metallized temporary bonding layer (2, 2') is measured, and one radiation power of the debonding radiation (5) is controlled.

13. An apparatus for bonding a product substrate (4, 4') from a carrier substrate (1, 1', 1''', 1''', 1IV), specifically using the method of any one of claims 8 to 12, wherein the product substrate (4, 4') and the carrier substrate (1, 1', 1''', 1''', 1IV) are connected by a metallized temporary bonding layer (2, 2') and form a substrate stack (6, 6'), wherein the apparatus comprises at least: A substrate holder for mounting and securing the substrate stack (6, 6'), a radiation source for delivering debonding radiation (5), specifically a laser beam, through the carrier substrate and focused onto the metallized temporary bonding layer (2, 2'), thereby melting, evaporating and / or sublimating the metallized temporary bonding layer (2, 2'), and a release member for peeling the product substrate (4, 4') from the carrier substrate (1, 1', 1'', 1''', 1IV).

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