Batch-type semiconductor manufacturing apparatus and semiconductor substrate treatment method

Abstract

This invention provides a batch semiconductor manufacturing apparatus and a semiconductor substrate processing method, which reduces the loss of process gas or precursor from the nozzle to the wafer by improving the injection efficiency of process gas or precursor from the nozzle to the substrate. The semiconductor manufacturing apparatus includes: a boat on which the substrate is mounted in a first direction; an inner tube covering the boat; a nozzle extending in the first direction through which the process gas to be supplied to the substrate moves; a nozzle tube surrounding the nozzle and including a gas injection port for injecting the process gas toward the substrate; and a nozzle protrusion connected to the gas injection port and extending in a second direction, wherein the shortest distance from the end of the nozzle protrusion to the substrate is greater than 0 mm and less than 9 mm.

Description

Technical Field

[0001] This disclosure relates to a semiconductor manufacturing apparatus and a substrate processing method using the same, and more specifically, to the efficient injection of a process gas or precursor by using the semiconductor manufacturing apparatus and the substrate processing method using the same. Prior Technology

[0002] Recently, as semiconductor devices have become highly integrated, design rules are shrinking. Consequently, the area occupied by a unit cell in a semiconductor device is decreasing, and the linewidth of the pattern is also decreasing. Therefore, the thickness of thin films is gradually decreasing, and it is extremely difficult to form a substrate with stepped coverage.

[0003] Simultaneously, atomic layer deposition (ALD) equipment is being developed for forming thin films with atomic layer thickness. The ALD equipment injects source and reactant gases onto a substrate to grow the film. Here, it is important to adequately supply and exhaust process gases from the ALD equipment. Summary of the Invention

[0004] [[] [Technical Challenges] []]

[0005] This disclosure provides a semiconductor manufacturing apparatus that reduces the loss of process gas or precursor from the nozzle to the wafer by improving the injection efficiency of process gas or precursor from the nozzle to the substrate.

[0006] However, the nature of this disclosure is not limited to the nature set forth herein. The above and other aspects of this disclosure will become more apparent to those skilled in the art to which this disclosure pertains by referring to the embodiments of this disclosure given below. [[] [Technical Solution] []]

[0007] According to the present disclosure, a batch semiconductor manufacturing apparatus is provided, comprising: a boat on which a substrate is mounted in a first direction; an inner tube covering the boat; a nozzle extending in the first direction through which a process gas to be supplied to the substrate moves; a nozzle tube surrounding the nozzle and including a gas injection port for injecting the process gas toward the substrate; and a nozzle protrusion connected to the gas injection port and extending in a second direction, wherein the shortest distance from the end of the nozzle protrusion to the substrate is greater than 0 mm and less than 9 mm.

[0008] According to the present disclosure, a semiconductor substrate processing method is provided, comprising: loading a substrate onto a boat in a first direction; moving a processing gas to be injected into the substrate through a nozzle extending in the first direction; injecting the processing gas into the substrate through a gas injection hole of a nozzle tube surrounding the nozzle and including a gas injection orifice; and moving the processing gas along a nozzle protrusion and subsequently injecting it toward the substrate, the nozzle protrusion being connected to the gas injection orifice and extending in a second direction, wherein the nozzle protrusion is inserted into a slit opening stacked in the first direction to inject the gas into the substrate. [[] [Beneficial effects] []]

[0009] Semiconductor manufacturing equipment can reduce the loss of process gas or precursor from the nozzle to the wafer by improving the injection efficiency of process gas or precursor from the nozzle to the substrate.

[0010] However, the effects disclosed herein are not limited to those described above, and the present invention includes various other effects. Simple Explanation of the Diagram

[0011] The above and other features and characteristics disclosed herein will become more apparent from their exemplary embodiments described in detail with reference to the accompanying drawings, wherein: Figure 1 is an exemplary view of a semiconductor manufacturing apparatus according to an embodiment. Figure 2 is a cross-sectional view of the semiconductor manufacturing equipment according to the embodiment of Figure 1, taken along line A-A'. Figure 3 is an enlarged view of region S1 in Figure 1. Figure 4 is an enlarged view of region S2 in Figure 3. Figure 5 is an illustrative graph showing the emission rate of the treated gas at point X2 according to the ratio of W1 to W2 in Figure 4. Figure 6 is an illustrative graph showing the flux at the center of the base according to the ratio of W1 to W2 in Figure 4. Figure 7 is an exemplary graph showing the emission rate of the processed gas at point X5 as the distance between the end of the nozzle protrusion and the edge of the substrate decreases. Figure 8 is a graph showing the concentration dispersion of the treatment gas among multiple substrates and the average flux of the treatment gas at the center of each substrate, depending on the variation of the distance between the end of the nozzle protrusion and the edge of the substrate. Figure 9 is an illustrative graph showing the concentration dispersion of the processing gas in the substrate as the distance between the end of the nozzle protrusion and the edge of the substrate varies. Figure 10 is an exemplary flowchart illustrating a substrate processing method for a semiconductor device according to an embodiment. Implementation

[0012] Figure 1 is an exemplary view of a semiconductor manufacturing apparatus according to an embodiment. Figure 2 is a cross-sectional view of the semiconductor manufacturing apparatus according to the embodiment of Figure 1 taken along line A-A'.

[0013] Referring to Figures 1 and 2, the semiconductor manufacturing apparatus according to the embodiment may include a processing chamber 10, the processing chamber 10 including a boat 20, a slit 24, a nozzle 30, a nozzle tube 40, an inner tube 50, an outer tube 70, and an exhaust tube 80.

[0014] The semiconductor manufacturing apparatus according to the embodiments can be an apparatus for performing semiconductor processes by supplying process gases to a substrate 1, such as a wafer. The semiconductor manufacturing apparatus according to the embodiments can be, for example, an atomic layer deposition (ALD) apparatus. The semiconductor manufacturing apparatus according to the embodiments is not limited thereto, and can also be various deposition apparatuses for depositing thin films on the substrate 1 using process gases or precursors. The semiconductor manufacturing apparatus according to the embodiments is not limited thereto, and can also be used in deposition or annealing processes using process gases. For ease of description, the use of process gases in the semiconductor manufacturing apparatus according to the embodiments will be described below. The semiconductor manufacturing apparatus according to the embodiments can be a batch processing apparatus.

[0015] Processing chamber 10 may extend in a first direction DR1. Processing chamber 10 provides internal space for performing semiconductor processes on substrate 1. Processing chamber 10 may be made of a high-temperature resistant material, such as quartz or silicon carbide (SiC). Although not shown in the present figures, the semiconductor manufacturing apparatus according to an embodiment may further include heaters that cover and heat processing chamber 10.

[0016] The boat 20 can be placed inside the processing chamber 10. The boat 20 can accommodate multiple substrates 1 in the first direction DR1.

[0017] The nozzle 30 may be disposed inside the processing chamber 10. The nozzle 30 may extend in the first direction DR1. The nozzle 30 may be a channel through which the processing gas moves.

[0018] The nozzle 30 may include a gas injection port 32. The gas injection port 32 may inject a processing gas into the processing chamber 10. More specifically, the processing gas moving through the nozzle 30 may be injected onto the substrate 1 via the gas injection port 32. The gas injection port 32 may inject, for example, a processing gas used to form a thin film on the substrate 1.

[0019] Additionally, the semiconductor manufacturing apparatus according to the embodiments may further include one or more auxiliary gas nozzles 60 and 62. The auxiliary gas nozzles 60 and 62 may be disposed around the nozzle 30 for injecting process gas. The auxiliary gas nozzles 60 and 62 may be horizontally symmetrically disposed relative to the nozzle 30 in a second direction DR2 for injecting process gas. The auxiliary gas nozzles 60 and 62 may inject auxiliary gas such that the process gas can be dispersed to the center of the substrate 1. The configuration and / or number of auxiliary gas nozzles are not limited to those shown in the present figures.

[0020] The inner tube 50 may have a cylindrical shape with an open bottom. The cross-section of the inner tube 50 may have an annular shape. The inner tube 50 may cover the boat 20. The inner tube 50 may include a slit opening 52 formed by opening at least a portion of the inner tube 50.

[0021] The outer tube 70 may have an annular shape. The outer tube 70 may cover the inner tube 50.

[0022] An exhaust pipe 80 may be disposed on one side of the processing chamber 10. The exhaust pipe 80 may extend along a second direction DR2. The second direction DR2 may refer to a direction intersecting with the first direction DR1. For example, the second direction DR2 may refer to a direction perpendicular to the first direction DR1. The processing gas inside the processing chamber 10 may be discharged to the outside of the processing chamber 10 via the exhaust pipe 80.

[0023] The nozzle tube 40 may cover the nozzle 30 and the gas injection port 32. More specifically, at least a portion of the nozzle tube 40 may be opened to form the gas injection port 32. The gas injection port 32 may be formed to face the substrate 1. For example, the nozzle tube 40 may surround the nozzle 30 and may include a gas injection port 32 that opens toward the substrate 1.

[0024] Nozzle 30 can be connected to a nozzle protrusion 100b projecting toward the substrate 1. More specifically, nozzle protrusion 100b can be connected to a gas injection port 32. Nozzle protrusion 100b can be inserted into a slit opening 52. In another embodiment, nozzle protrusion 100b can be inserted into a slit opening 52 and positioned inside the inner tube 50.

[0025] That is, in the semiconductor manufacturing apparatus according to the embodiment, the process gas can be passed between the gas injection port 32 and the inner tube 50 without loss. In other words, in the semiconductor manufacturing apparatus according to the embodiment, the process gas moving through the nozzle 30 can be delivered to the substrate 1 via the nozzle protrusion 100b connected to the gas injection port 32 without loss of the process gas throughput.

[0026] The description of the nozzle protrusion 100b connected to the nozzle 30 applies to the description of the nozzle protrusions 100c and 100a connected to the auxiliary nozzle 60 and auxiliary nozzle 62, respectively.

[0027] The number of auxiliary nozzles is not limited to the number shown in the current diagram, and may be three or more.

[0028] The semiconductor manufacturing apparatus according to the embodiment will now be described in detail with reference to FIG3, which reduces the throughput loss of the process gas injected toward the substrate 1 via the nozzle protrusion.

[0029] Figure 3 is an enlarged view of region S1 in Figure 1.

[0030] Referring to Figures 1 to 3, each of the plurality of substrates 1 can be mounted on the boat 20 along the first direction DR1.

[0031] The inner tube 50 may cover the boat 20. The inner tube 50 may include a plurality of slit openings 52 formed in the first direction DR1. That is, the slit openings 52 may be stacked in the first direction DR1. The slit openings 52 may be formed along the sidewall of the boat 20 extending in the first direction DR1. That is, the slit openings 52 may be formed along the sidewall of the boat 20.

[0032] Each of the slit openings 52 through which the nozzle protrusion 100b passes may be formed at a position between adjacent slits 24.

[0033] Nozzle protrusion 100b, auxiliary nozzle protrusion 100a and auxiliary nozzle protrusion 100c may be formed adjacent to each other, with a slit 24 inserted between them.

[0034] Therefore, the number of slit openings 52 through which the nozzle protrusion 100b passes can be the same as the number of bases 1 loaded on the boat 20.

[0035] The sidewall of the nozzle 30 extending in the first direction DR1 may include a plurality of openings. The nozzle 30 may include a gas injection port 32 at a position corresponding to each of the openings. The nozzle protrusion 100b may be connected to the gas injection port 32 described above and may extend in the second direction DR2. That is, the number of gas injection ports 32 and the number of nozzle protrusions 100b may be the same.

[0036] Nozzle protrusions 100b may be formed at positions corresponding to slit openings 52. The center point of each nozzle protrusion 100b and the center point of each slit opening 52 may be located on the centerline L. However, in the semiconductor manufacturing apparatus according to the embodiment, the center point of each nozzle protrusion 100b and the center point of each slit opening 52 may also be located at positions not on the centerline L.

[0037] The nozzle tube 40 may cover the outer circumferential surface of the nozzle 30 and the outer circumferential surface of the gas injection hole 32. That is, the nozzle tube 40 may include an opening corresponding to the position of the gas injection hole 32. More specifically, the starting position X1 of the formation of the gas injection hole 32 may be the same as the starting position X1 of the opening of the nozzle tube 40, and the ending position X2 of the formation of the gas injection hole 32 may be the same as the ending position X2 of the opening of the nozzle tube 40.

[0038] The nozzle protrusion 100b can be connected to the position X2 where the gas injection port 32 is formed. Furthermore, the nozzle protrusion 100b can extend in the second direction DR2 and can be inserted into the slit opening 52. That is, since the process gas injected from the gas injection port 32 moves through the nozzle protrusion 100b, no process gas is lost in the space (from X2 to X3) between the nozzle tube 40 and the internal chamber 50. Therefore, the semiconductor manufacturing apparatus according to the embodiment can reduce the throughput loss of the process gas supplied from the nozzle 30 via the nozzle protrusion 100b. More specifically, the semiconductor manufacturing apparatus according to the embodiment can achieve improved injection efficiency of the process gas moving from the nozzle 30 to the substrate 1.

[0039] In the current diagram, the point X4 from which the processing gas is injected from the nozzle protrusion 100b, i.e., the end X4 of each nozzle protrusion 100b in the second direction DR2, is located between the slit 24 and the boat 20. However, this disclosure is not limited to this, and the end X4 may also be located inside the slit 24 (X3 to X4). Alternatively, the end X4 of each nozzle protrusion 100b in the second direction DR2 may be located on the edge X5 of the substrate 1.

[0040] The nozzle protrusion 100b is now described in detail in Figure 4, which is an enlarged view with reference to region S2.

[0041] Figure 4 is an enlarged view of region S2 in Figure 3.

[0042] Referring to Figures 3 and 4, the gas injection port 32 may include an inlet 33 having a first diameter W1 and an outlet 34 having a second diameter W2. Processing gas moving from the nozzle 30 may be introduced into the inlet 33. The processing gas introduced into the inlet 33 may move to the nozzle protrusion 100b via the outlet 34. That is, the processing gas may move sequentially along the nozzle 30, the gas injection port 32, and the nozzle protrusion 100b, and may subsequently be injected toward the substrate 1 at the end point X4 of the nozzle protrusion 100b.

[0043] More specifically, the inlet 33 may be point X1 where the gas injection hole 32 begins, and the outlet 34 may be the open surface where the gas injection hole 32 ends. In the semiconductor manufacturing apparatus according to the embodiment, the first diameter W1 is larger than the second diameter W2. For example, the value obtained by dividing the second diameter W2 by the first diameter W1 may be greater than 0.6 and less than 1. In another example, the value obtained by dividing the second diameter W2 by the first diameter W1 may be 0.63.

[0044] The fluid channel surface 31, defined as the surface where the gas injection port 32 contacts the nozzle tube 40, may have a curved surface. For example, the curvature of the fluid channel surface 31 may be greater than 0 mm and less than 0.5 mm.

[0045] Because the fluid channel surface 31 has curvature, the stress applied to the fluid channel surface 31 can be relieved, thereby improving the durability of the surface where the nozzle protrusion 100b contacts the nozzle tube 40.

[0046] In the semiconductor manufacturing apparatus according to the embodiment, the distance L1 from the center point P1 of the inlet 33 to the point where the dashed line extending in the first direction DR1 intersects with the nozzle tube 40 can be half of the first diameter W1.

[0047] In the semiconductor manufacturing apparatus according to the embodiment, the distance L2 from the center point C2 of the outlet 34 to the point where the dashed line extending in the first direction DR1 intersects with the nozzle tube 40 can be half of the second diameter W2.

[0048] In the semiconductor manufacturing apparatus according to the embodiment, the center point P1 of the inlet 33 and the center point C2 of the outlet 34 may not be located on a straight line in the second direction DR2.

[0049] As described above, since the surface (fluid channel surface 31) where the gas injection orifice 32 contacts the nozzle tube 40 is curved, the flow resistance of the process gas moving from the nozzle 30 is reduced, which in turn increases the flow rate of the process gas in the gas injection orifice 32. That is, in the semiconductor manufacturing apparatus according to the embodiment, since the flow rate of the process gas injected from the nozzle 30 toward the substrate 1 is increased, an improved injection efficiency of the process gas can be obtained.

[0050] The distance from the position X1 where the gas injection hole 32 connects to the nozzle 30 to the position X4 where the processing gas is injected from the nozzle protrusion 100b can be defined as the nozzle protrusion length Length_N. The nozzle protrusion length Length_N can be, for example, 28 mm.

[0051] As the nozzle protrusion length Length_N increases, the distance EG from the end X4 of the nozzle protrusion 100b to the edge X5 of the substrate 1 can decrease. That is, as the distance EG decreases, the amount of processing gas lost before the injected processing gas reaches the substrate 1 can be reduced. The distance EG from the end X4 of the nozzle protrusion 100b to the edge X5 of the substrate 1 can be, for example, greater than 0 mm and less than 12 mm.

[0052] The variation of process gas injection efficiency according to the embodiment, based on the structural changes of the semiconductor manufacturing equipment, will now be described from various perspectives with reference to Figures 5 through 9.

[0053] Figure 5 is an illustrative graph showing the emission rate of the treated gas at point X2 according to the ratio of W1 to W2 in Figure 4.

[0054] Referring to Figures 4 and 5, the flow rate of the process gas at outlet X2 in the semiconductor manufacturing apparatus according to the embodiment can be observed to vary with the change of the second diameter W2 relative to the first diameter W1.

[0055] The fraction on the x-axis of the graph in Figure 5 represents the ratio of the first diameter W1 to the second diameter W2. The y-axis represents the flow rate of the processed gas at outlet X2 according to the ratio of the first diameter W1 to the second diameter W2.

[0056] As can be seen from the graph in Figure 5, in the semiconductor manufacturing apparatus according to the embodiment, the flow rate of the process gas at the outlet X2 increases as the diameter W2 of the outlet 34 decreases relative to the diameter W1 of the inlet 33 of the gas injection hole 32.

[0057] For example, when the diameter W1 of the inlet 33 of the gas injection port 32 is 1.6 mm and the diameter W2 of the outlet 34 is 1.6 mm, the flow rate of the processed gas at the outlet X2 can be 411 m / s. Alternatively, for example, when the diameter W1 of the inlet 33 of the gas injection port 32 is 1.6 mm and the diameter W2 of the outlet 34 is 1.4 mm, the flow rate of the processed gas at the outlet X2 can be 437 m / s. Alternatively, for example, when the diameter W1 of the inlet 33 of the gas injection port 32 is 1.6 mm and the diameter W2 of the outlet 34 is 1.2 mm, the flow rate of the processed gas at the outlet X2 can be 470 m / s. Alternatively, for example, when the diameter W1 of the inlet 33 of the gas injection port 32 is 1.6 mm and the diameter W2 of the outlet 34 is 1.0 mm, the flow rate of the processed gas at the outlet X2 can be 503 m / s. For example, when the diameter W1 of the inlet 33 of the gas injection port 32 is 1.6 mm and the diameter W2 of the outlet 34 is 0.8 mm, the flow rate of the processed gas at the outlet X2 can be 539 m / s.

[0058] Figure 6 is an illustrative graph showing the flux at the center of the base according to the ratio of W1 to W2 in Figure 4.

[0059] Referring to Figures 4 and 6, the flux of the process gas at the center of the substrate 1 in the semiconductor manufacturing apparatus according to the embodiment can be observed to vary with the change of the second diameter W2 relative to the first diameter W1.

[0060] The fraction on the x-axis of the graph in Figure 6 represents the ratio of the first diameter W1 to the second diameter W2. The y-axis represents the flux of the process gas at the center C1 of substrate 1 according to the ratio of the first diameter W1 to the second diameter W2.

[0061] Flux can be measured as the product of the flow rate of the processed gas and the cross-sectional area through which the processed gas flows.

[0062] The flux of the process gas at the center C1 of the substrate 1 tends to increase as the diameter W2 of the outlet 34 decreases compared to the diameter W1 of the inlet 33 of the gas injection hole 32. However, there may be a point of inflection (1.6 / 1.0) through which the flux decreases due to the decrease in the cross-sectional area through which the process gas flows.

[0063] For example, when the diameter W1 of the inlet 33 of the gas injection port 32 is 1.6 mm and the diameter W2 of the outlet 34 is 1.6 mm, the flow rate of the process gas at the center C1 of the substrate 1 can be minimized. Alternatively, for example, the flow rate of the process gas at the center C1 of the substrate 1 can continue to increase until the diameter W1 of the inlet 33 of the gas injection port 32 is 1.6 mm and the diameter W2 of the outlet 34 is 1.0 mm. Subsequently, for example, the flow rate of the process gas at the center C1 of the substrate 1 can decrease until the diameter W1 of the inlet 33 of the gas injection port 32 is 1.6 mm and the diameter W2 of the outlet 34 is 0.8 mm.

[0064] Therefore, the semiconductor manufacturing apparatus according to the embodiment can adjust the first diameter W1 / second diameter W2 so that a larger flow rate of process gas is injected into the center C1 of the substrate 1. For example, in the semiconductor manufacturing apparatus according to the embodiment, the flow rate at the center C1 of the substrate 1 can be maximized when the first diameter W1 / second diameter W2 is 1.6 / 1.0.

[0065] Alternatively, in the semiconductor manufacturing apparatus according to the embodiment, the second diameter W2 / first diameter W1 may be 0.5 to 0.75, such that a larger throughput of process gas is injected into the center C1 of the substrate 1.

[0066] Figure 7 is an exemplary graph showing the emission rate of the processed gas at point X5 as the distance between the end of the nozzle protrusion and the edge of the substrate decreases.

[0067] Referring to Figures 4 and 7, the flow rate of the process gas at the edge X5 of the substrate 1 in the semiconductor manufacturing apparatus according to the embodiment can be observed to vary with the distance EG between the end X4 of the nozzle protrusion 100b and the edge X5 of the substrate 1.

[0068] In the graph of Figure 7, the x-axis represents the distance EG between the end X4 of the nozzle protrusion 100b and the edge X5 of the substrate 1. The y-axis represents the flow rate of the process gas at the edge X5 of the substrate 1.

[0069] In the graph of Figure 7, the x-axis indicates the distance Ref from any distance between the end X4 of the nozzle protrusion 100b and the edge X5 of the substrate 1, gradually decreasing to the distance EG5 between the end X4 of the nozzle protrusion 100b and the edge X5 of the substrate 1. The y-axis indicates the resulting change in the flow rate of the process gas at the edge X5 of the substrate 1.

[0070] In the graph of Figure 7, Ref on the x-axis represents the case where the distance between the end X4 of the nozzle protrusion 100b and the edge X5 of the base 1 is 33 mm. EG25 on the x-axis represents the case where the distance between the end X4 of the nozzle protrusion 100b and the edge X5 of the base 1 is 25 mm. EG12 on the x-axis represents the case where the distance between the end X4 of the nozzle protrusion 100b and the edge X5 of the base 1 is 12 mm. EG5 on the x-axis represents the case where the distance between the end X4 of the nozzle protrusion 100b and the edge X5 of the base 1 is 5 mm.

[0071] As can be seen from the graph in Figure 7, the flow rate of the processing gas at the edge X5 of the substrate 1 increases as the distance EG between the end X4 of the nozzle protrusion 100b and the edge X5 of the substrate 1 decreases.

[0072] For example, when the distance between the end X4 of the nozzle protrusion 100b and the edge X5 of the substrate 1 is 33 mm, the flow rate of the processing gas at the edge X5 of the substrate 1 can be 5 m / s. Alternatively, for example, when the distance between the end X4 of the nozzle protrusion 100b and the edge X5 of the substrate 1 is 25 mm, the flow rate of the processing gas at the edge X5 of the substrate 1 can be 15 m / s. Alternatively, for example, when the distance between the end X4 of the nozzle protrusion 100b and the edge X5 of the substrate 1 is 12 mm, the flow rate of the processing gas at the edge X5 of the substrate 1 can be 167 m / s. Alternatively, for example, when the distance between the end X4 of the nozzle protrusion 100b and the edge X5 of the substrate 1 is 5 mm, the flow rate of the processing gas at the edge X5 of the substrate 1 can be 337 m / s.

[0073] That is, in the semiconductor manufacturing apparatus according to the embodiment, the distance EG between the end X4 of the nozzle protrusion 100b and the edge X5 of the substrate 1 can be reduced to increase the flow rate of the process gas at the edge X5 of the substrate 1.

[0074] For example, when the distance EG between the end X4 of the nozzle protrusion 100b and the edge X5 of the substrate 1 is 5 mm, the flow rate of the processing gas at the edge X5 of the substrate 1 can be maximized.

[0075] Figure 8 is a graph showing the concentration dispersion of the treatment gas among multiple substrates and the average flux of the treatment gas at the center of each substrate, depending on the variation of the distance between the end of the nozzle protrusion and the edge of the substrate.

[0076] Referring to Figures 1, 2, 4, and 8, the dispersion of the process gas concentration among the plurality of substrates 1 in the semiconductor manufacturing apparatus according to the embodiment can be observed to vary according to the distance EG between the end X4 of the nozzle protrusion 100b and the edge X5 of the substrate 1. The substrate 1 may refer to a plurality of substrates 1 sequentially stacked in a first direction DR1 as shown in Figure 1.

[0077] In the graph of Figure 8, Ref on the x-axis represents the case where the distance between the end X4 of the nozzle protrusion 100b and the edge X5 of the base 1 is 33 mm. EG12 on the x-axis represents the case where the distance between the end X4 of the nozzle protrusion 100b and the edge X5 of the base 1 is 12 mm. EG5 on the x-axis represents the case where the distance between the end X4 of the nozzle protrusion 100b and the edge X5 of the base 1 is 5 mm.

[0078] In the curve graph of Figure 8, the dispersion of the treatment gas concentration between the substrates 1 on the left y-axis is represented by circles.

[0079] As can be seen from the graph in Figure 8, the dispersion of the process gas concentration between the substrates 1 decreases as the distance EG between the end X4 of the nozzle protrusion 100b and the edge X5 of the substrate 1 decreases. That is, in the semiconductor manufacturing apparatus according to the embodiment, the distance EG between the end X4 of the nozzle protrusion 100b and the edge X5 of the substrate 1 can be reduced to decrease the dispersion of the process gas concentration between the substrates 1. Therefore, under certain process conditions, a relatively uniform process gas can be formed between the substrates 1. In other words, the yield of the semiconductor manufacturing apparatus according to the embodiment can be increased by reducing the distance EG between the end X4 of the nozzle protrusion 100b and the edge X5 of the substrate 1.

[0080] For example, when the distance between the end X4 of the nozzle protrusion 100b and the edge X5 of the substrate 1 is 33 mm, the dispersion can be 4.24%. Alternatively, for example, when the distance between the end X4 of the nozzle protrusion 100b and the edge X5 of the substrate 1 is 12 mm, the dispersion can be 3.68%. Furthermore, for example, when the distance between the end X4 of the nozzle protrusion 100b and the edge X5 of the substrate 1 is 5 mm, the dispersion can be 3.29%.

[0081] That is, compared to a distance of 33 mm between the end X4 of the nozzle protrusion 100b and the edge X5 of the substrate 1, the dispersion can be improved by approximately 13% when the distance is 12 mm. Furthermore, compared to a distance of 33 mm between the end X4 of the nozzle protrusion 100b and the edge X5 of the substrate 1, the dispersion can be improved by approximately 23% when the distance is 5 mm.

[0082] Referring to Figures 4 and 8, the average flux of the process gas at the center of each of the substrates 1 in the semiconductor manufacturing apparatus according to the embodiment can be observed to vary with the distance EG between the end X4 of the nozzle protrusion 100b and the edge X5 of the substrate 1. The substrate 1 may refer to a plurality of substrates 1 sequentially stacked in a first direction DR1 as shown in Figure 1.

[0083] In the graph of Figure 8, the average flux of the treatment gas at the center C1 of each of the substrates 1 on the right y-axis is represented by a bar graph.

[0084] As can be seen from the graph in Figure 8, the average flux of the process gas at the center of each of the substrates 1 increases as the distance EG between the end X4 of the nozzle protrusion 100b and the edge X5 of the substrate 1 decreases.

[0085] For example, the flux can be minimized when the distance between the end X4 of the nozzle protrusion 100b and the edge X5 of the base 1 is 33 mm. Alternatively, the flux can be maximized when the distance between the end X4 of the nozzle protrusion 100b and the edge X5 of the base 1 is 5 mm.

[0086] That is, in the semiconductor manufacturing apparatus according to the embodiment, the distance EG between the end X4 of the nozzle protrusion 100b and the edge X5 of the substrate 1 can be reduced to increase the average flux of the process gas at the center of each of the substrates 1.

[0087] Figure 9 is an illustrative graph showing the concentration dispersion of the processing gas in the substrate as the distance between the end of the nozzle protrusion and the edge of the substrate varies.

[0088] Referring to Figures 4 and 9, the concentration dispersion of the processing gas in the substrate 1 can be observed according to the change of the distance EG between the end X4 of the nozzle protrusion 100b and the edge X5 of the substrate 1.

[0089] In the graph of Figure 9, the x-axis represents the position (-0.15M and 0.15M) of each edge from the center C1 or center O of substrate 1. That is, the position indicated by -0.15M on the x-axis can be the edge X5 of substrate 1 in Figure 4. The y-axis represents the normalized concentration of the process gas of substrate 1. The solid line represents the concentration dispersion when the reference distance Ref between the end X4 of nozzle protrusion 100b and the edge X5 of substrate 1 is 33 mm. The dashed line represents the concentration dispersion on the wafer when the distance EG between the end X4 of nozzle protrusion 100b and the edge X5 of substrate 1 is 5 mm, wherein the distance EG decreases from the reference distance Ref.

[0090] As can be seen from the graph in Figure 9, the concentration of the processing gas can be increased not only at the center 0 of the substrate 1 but also in the total area of ​​the substrate 1 by reducing the distance EG between the end X4 of the nozzle protrusion 100b and the edge X5 of the substrate 1.

[0091] That is, in the semiconductor manufacturing apparatus according to the embodiment, the distance EG between the end X4 of the nozzle protrusion 100b and the edge X5 of the substrate 1 can be reduced to increase the concentration of the process gas injected onto the substrate 1.

[0092] Figure 10 is an exemplary flowchart illustrating a substrate processing method for a semiconductor device according to an embodiment.

[0093] Referring to Figures 2 and 10, according to the embodiment, the semiconductor device may load the substrate 1 onto the boat 20 (operation S100), move the processing gas through the nozzle 30 (operation S200), and inject the processing gas through the gas injection port 32 (operation S300). Here, the processing gas may move along the nozzle protrusions 100a, 100b, and / or 100c, and may be injected toward the substrate (operation S400).

[0094] In summary, those skilled in the art will understand that many variations and modifications can be made to the preferred embodiments without substantially departing from the principles of the invention. Therefore, the preferred embodiments of the invention disclosed herein are for general and descriptive purposes only and are not intended to be limiting.

[0095] 0, C1: Center 1: Base 10: Processing Chamber 20:boat 24: Slit 30: Nozzle 31: Fluid channel surface 32: Gas injection port 33: Entrance 34: Exports 40: Nozzle tube 50: Inner tube 52: Slit opening 60, 62: Auxiliary gas nozzles 70: External Management 80: Exhaust pipe 100, 100b: Nozzle protrusion 100a, 100c: Auxiliary nozzle protrusion A-A': line C2, P1: Center point DR1: First Direction DR2: Second Direction L: Centerline L1, L2, EG, EG5, EG12, EG25: Distance Length_N: Nozzle protrusion length Ref: Baseline Distance S1, S2: Areas S100, S200, S300, S400: Operation W1: First diameter W2: Second diameter X1, X2, X3, X4: Points X5: Edge

Claims

1. A batch semiconductor manufacturing apparatus, comprising: A boat-shaped vessel, with a substrate mounted on the boat-shaped vessel in a first direction; The inner tube covers the boat-shaped vessel; A nozzle, extending in the first direction, through which the process gas to be supplied to the substrate moves; A nozzle tube surrounds the nozzle and includes a gas injection port for injecting the processing gas toward the substrate; and a nozzle protrusion, connected to the gas injection orifice and extending in a second direction, wherein the shortest distance from one end of the nozzle protrusion to the substrate is greater than 0 mm and less than 5 mm, the gas injection orifice includes an inlet having a first diameter and an outlet having a second diameter, the second diameter being smaller than the first diameter, the diameter of the gas injection orifice gradually decreasing from the inlet toward the outlet, the processing gas being introduced into the inlet via the nozzle, the processing gas being discharged from the inlet toward the outlet, and the value obtained by dividing the second diameter by the first diameter being 0.5 to 0.

75.

2. The batch semiconductor manufacturing apparatus of claim 1, wherein the nozzle protrusion is inserted into a slit opening stacked in the first direction.

3. The batch semiconductor manufacturing apparatus as claimed in claim 1 further includes slits and slit openings stacked along the sidewall of the boat in the first direction.

4. The batch semiconductor manufacturing apparatus of claim 1, wherein the flow channel surface defined as the surface in contact with the nozzle tube has a curved surface.

5. The batch semiconductor manufacturing apparatus as claimed in claim 4, wherein the curvature of the curved surface is greater than 0 mm and less than 0.5 mm.

6. The batch semiconductor manufacturing apparatus as claimed in claim 2, wherein the number of slit openings and the number of nozzle protrusions are the same.

7. The batch semiconductor manufacturing equipment as described in claim 1, further comprising auxiliary nozzles.

8. The batch semiconductor manufacturing apparatus as claimed in claim 7, wherein the number of auxiliary nozzles is two or more.

9. A method for processing a semiconductor substrate, comprising: The base is loaded onto the boat in the first direction; The processing gas to be injected into the substrate is moved via a nozzle extending in the first direction; The processing gas is injected into the substrate via the gas injection port of the nozzle tube surrounding the nozzle and including a gas injection port; The process gas is moved along a nozzle protrusion and subsequently injected toward the substrate, the nozzle protrusion being connected to the gas injection orifice and extending in a second direction, wherein the nozzle protrusion is inserted into a slit opening stacked in the first direction to inject the gas into the substrate, the shortest distance from one end of the nozzle protrusion to the substrate being greater than 0 mm and less than 5 mm, the gas injection orifice including an inlet having a first diameter and an outlet having a second diameter smaller than the first diameter, the diameter of the gas injection orifice gradually decreasing from the inlet toward the outlet, the process gas being introduced into the inlet via the nozzle, the process gas being discharged from the inlet toward the outlet, and a value obtained by dividing the second diameter by the first diameter being 0.5 to 0.

75.

10. The semiconductor substrate processing method of claim 9, wherein the semiconductor process using the processing gas includes depositing a film on the substrate or annealing the substrate.

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