Positive-working photoresist composition with improved pattern profile and depth of focus (DOF)

Abstract

The subject matter disclosed relates to a photoresist composition comprising the following components: component a) a blend of two phenolic varnish polymers having structures (I) and (II); component b) a diazonoquinone sulfonate (DNQ-PAC) component, which is a single material or mixture of materials having a general formula (III) or a general formula (III-1); component c) a solubilizing agent component comprising a polyphenol compound, which is a single compound or a mixture of at least two compounds selected from the group consisting of oligomeric phenolic varnishes, compounds having a general formula (VI) and compounds having a general formula (VII), wherein R de1, R de2, R de3, R de4 and R de5 are individually selected from C-1 to C-4 alkyl groups; component d) a surfactant; and component e) an organic spin casting solvent; and component f) a heterocyclic thiol, if applicable.

Description

Technical Field

[0001] The subject matter disclosed relates to a positive radiation-sensitive alkaline aqueous solution soluble photoresist composition for the manufacture of integrated circuits (ICs), light-emitting diode (LED) devices and display devices. Prior Technology

[0002] Photoresist compositions are used in lithography processes to fabricate miniaturized electronic components, such as computer chips, integrated circuits, light-emitting diode (LED) devices, and displays. Generally, in these processes, a film of the photoresist composition is first coated onto a substrate material, such as a silicon wafer used to fabricate integrated circuits. The coated substrate is then baked to evaporate the solvent in the photoresist composition and fix the coating onto the substrate. The baked-coated surface of the substrate is then exposed to imaging radiation.

[0003] This radiation exposure causes chemical transformation in the exposed areas of the coated surface. Visible light, ultraviolet (UV) light, electron beams, and X-ray radiation energies are commonly used imaging radiation types in modern lithography processes. After this imaging exposure, the coated substrate is treated with a developer solution to dissolve and remove the exposed or unexposed areas of the coated surface.

[0004] There are two types of photoresist compositions: negative and positive. When a positive photoresist composition is exposed to radiation, the areas of the photoresist composition exposed to radiation become more soluble in the developer solution (e.g., due to the release of alkali solubilizing groups or photodecomposition of dissolution inhibitors), while the unexposed areas of the photoresist coating remain relatively insoluble in this solution. Therefore, treating the exposed positive photoresist with a developer removes the exposed areas of the photoresist coating and produces a positive image in the coating, thereby not covering the desired portion of the substrate surface on which the photoresist composition is deposited.

[0005] The use of positively sensitive photoresist compositions that can be developed with alkaline aqueous solutions is known. Most of these compositions are chemically amplified photoresists based on phenolic or (meth)acrylate resins or non-chemically amplified photoresists based on phenolic varnish resin / diazonaphthoquinone (DNQ). In phenolic varnish / DNQ photoresists, just as they are formed by the photodecomposition of diazonaphthoquinone (PAC) compounds that cause faster dissolution of the phenolic varnish resin in alkaline aqueous solutions in the exposed photoresist region, this type of photoresist is used at longer UV wavelengths, such as the i-line (365 nm), and has been a mainstay photoresist in the manufacture of integrated circuits (ICs) for many years.

[0006] Semiconductor assembly processes are being improved by introducing wafer-level packaging (WLP) in high-volume manufacturing. Miniaturization of copper (Cu) redistribution layers (RDLs) is a key process for manufacturing small, thin, and lightweight wafers. Fine-pitch redistribution layers (RDLs) represent a market trend for high-density wafer-level fan-out (HDWLFO) packaging of semiconductors. To realize this technology on the topology substrate, photoresists with high resolution and transmittance need to be developed. Chemically amplified (CA) type photoresists indicate stable sensitivity and high resolution at various thicknesses due to their high transparency during i-line (365 nm) exposure. However, their high cost and poor environmental stability limit their application in RDL manufacturing for Outsourced Semiconductor Assembly and Test (OSAT) companies. Compared to CA type photoresists, DNQ-based photoresists offer advantages such as lower cost, better environmental stability, and no post-exposure baking (PEB), which benefits OSAT companies. However, when analyzing fine-pitch features, the DNQ-based photoresist exhibits significant top loss (rounded corners) and base loss due to the bleaching effect of the diazonaphthoquinone (DNQ) photosensitive compound (PAC) on the i-line (365 nm) exposure. For Cu-RDL fabrication via electroplating, the unstable copper line profile (wide top / narrow bottom) resulting from the top loss / base photoresist profile makes top loss of the photoresist unacceptable.

[0007] For methods to improve the contours of photoresist patterns, process modifications are a common strategy, such as hard-baking the photoresist lines (after development) at a temperature higher than their glass transition temperature (Tg) to achieve the desired contours through hot reflow of the photoresist structure. However, this method reduces wafer yield due to the additional process steps. Summary of the Invention

[0008] To meet the requirement of improved profiles in semiconductor packaging without the need for hard baking, and to address the issue of declining wafer yield, novel photoresist formulations based on phenolic varnish / DNQ have been developed for high-resolution and vertically patterned profiles. These novel phenolic varnish / DNQ-based photoresist formulations, comprising two phenolic varnish resins, one DNQ PAC, and one speed enhancer (solution enhancer), unexpectedly exhibit high-resolution vertical profiles with a film thickness reduced from 5.0 µm to 0.9 µm lines / space. The novel phenolic varnish / DNQ-based photoresist formulations also unexpectedly exhibit significantly lower top loss and greatly improved depth of focus (DOF) without any other process modifications. These novel phenolic varnish / DNQ-based photoresist formulations produce vertical profiles with less top loss, high resolution, and fast light velocity without requiring post-exposure baking (PEB) or hard baking, and exhibit a larger process window (wider DOF) than conventional phenolic varnish / DNQ-based photoresist formulations. These novel phenolic varnish / DNQ-based photoresist formulations are environmentally stable, have good shelf life, use low-cost components, and are easy to prepare.

[0009] In one state, these novel compositions are compositions substantially composed of components a), b), c), d), and e), or components a), b), c), d), e), and f):

[0010] Component a) is a blend of two phenolic varnish polymers having structures (I) and (II); wherein R1 to R9 are independently selected from C-1 to C-4 alkyl groups, and x, y, and z represent mol% based on the total number of repeating units in the polymer of structure (I); k, l, and m represent mol% based on the total number of repeating units in the polymer of structure (II), and further wherein x is in the range of about 10 to about 20 mol%, y is in the range of about 50 to about 60 mol%, z is in the range of about 30 to about 40 mol%, k is in the range of about 10 to about 20 mol%, and l is in the range of about 10 to about 20 mol%. The solid weight percentage of the phenolic varnish polymers in structures (I) is in the range of about 40 to about 50 mol%, and m is in the range of about 30 to about 40 mol%, and further wherein for structure (I), the sum of x, y and z is 100 mol%, and in structure (II), the sum of k, l and m is 100 mol%; wherein the solid weight percentage of the phenolic varnish polymers in structures (I) and (II) is independently in the range of about 23 wt% to about 70 wt%, preferably about 25 wt% to about 60 wt% of solids.

[0011] Component b) is a diazononaphthoquinone sulfonate (DNQ-PAC) component, which is a single material or mixture of materials having a general formula (III) or having a general formula (III-1); wherein D1c, D2c, D3c, D4c and D5c are individually selected from H or have a portion having a structure (IV) or (V), and further wherein in structure (III), at least one of D1c, D2c, D3c or D4c is a portion having a structure (IV) or (V) and in structure (III-1), at least one of D1c, D2c, D3c, D4c and D5c is a portion having a structure (IV) or (V); wherein the DNQ-PAC is in the range of about 9 wt% to about 15 wt%, preferably about 10 wt% to about 15 wt% of total solids. Component c) is a solubilizing agent component containing a polyphenol compound, which is a single compound or a mixture of at least two compounds selected from the group consisting of oligomeric phenolic varnishes, compounds having general formula (VI) and compounds having general formula (VII), wherein R de1, R de2, R de3, R de4 and R de5 are individually selected from C-1 to C-4 alkyl groups;

[0012] Component d) is a surfactant and is in the range of about 0% by weight to about 0.2% by weight of solids.

[0013] Component e) is an organic spin casting solvent.

[0014] Component f) is a heterocyclic thiol.

[0015] Furthermore, the weight percentage of solids used is calculated from the total weight of components a), b), c), and d), or a), b), c), d), and f), and these weight percentages of solids are combined to a total of 100 weight percentages of solids. The weight percentage of solids for components a), b), c), and d), or components a), b), c), d), and f) ranges as follows: Component a) is one of the phenolic varnish polymers of structures (I) and (II) having a weight percentage of solids that are each in the range of about 23% to about 70% by weight. Component b) is in the range of about 9% to about 15% by weight. Component c) is in the range of about 4% to about 15% by weight, and Component d) is in the range of about 0 wt% to about 0.2 wt%; and further This composition does not contain hexamethylmelamine crosslinking agent or photoacid generator.

[0016] The subject matter disclosed also concerns a method for coating a photoresist composition onto a substrate as part of a photolithography process. Simple Explanation of the Diagram

[0017] The accompanying drawings are included to provide a further understanding of the disclosed subject matter and are incorporated in and form a part of this specification. They illustrate embodiments of the disclosed subject matter and, together with this specification, serve to explain the principles of the disclosed subject matter. []

[0018] Figure 1 Example 2 and Comparative Examples [1] Depth of Focal Length (DOF) curve. []

[0019] Figure 2 shows the SEM study of the depth of focus (DOF) of Example 2 at a film thickness of 5 µm (FT). []

[0020] Figure 3 shows the linearity of Example 2 at 5 µm FT. []

[0021] Figure 4 shows Table 1, which provides an overview of the etching performance of Examples 1, 2 and 3 compared to Comparative Example 1. Implementation

[0022] It should be understood that the foregoing general description and the following detailed description are illustrative and explanatory, and do not limit the subject matter claimed. In this application, unless otherwise specifically stated, the use of the singular includes the plural, the word "a / an" means "at least one," and the use of "or" means "and / or." Furthermore, the use of the term "including" and other forms such as "includes" and "included" is not restrictive. Additionally, unless otherwise specifically stated, terms such as "element" or "component" cover elements or components comprising one unit as well as elements or components comprising more than one unit. As used herein, unless otherwise indicated, the conjunction "and" is intended to be inclusive, and the conjunction "or" is not intended to be exclusive. For example, the phrase "or, alternatively" is intended to be exclusive. As used herein, the term "and / or" refers to any combination of the foregoing elements, including the use of a single element.

[0023] The section headings used herein are for organizational purposes and should not be construed as limiting the subject matter described. All references or portions thereof cited in this application (including, but not limited to, patents, patent applications, articles, books, and papers) are hereby expressly incorporated in their entirety for any purpose. Where one or more of the references and similar materials define terms in a manner that contradicts the definitions used in this application, this application shall prevail.

[0024] The term "bonding point" as used with respect to any of the inventive polymers refers to a branching point with another polymer chain and / or a cross-linking point with another polymer chain, wherein the degree of branching and / or cross-linking is such that the resulting branched and / or cross-linked polymer still has a sufficiently low molecular weight to avoid reaching the gel point when the polymer becomes insoluble in solvents such as spin casting solvents.

[0025] Unless otherwise indicated, "alkyl" means a hydrocarbon group that can be straight-chain, branched (e.g., methyl, ethyl, propyl, isopropyl, tert-butyl and the like), cyclic (e.g., cyclohexyl, cyclopropyl, cyclopentyl and the like), or polycyclic (e.g., nor-alkyl, adamantyl and the like). These alkyl moieties may be substituted or unsubstituted as described below. The term "alkyl" refers to such moieties having C-1 to C-20 carbon atoms. It should be understood that, for structural reasons, straight-chain alkyl groups begin at C-1, while branched and cyclic alkyl groups begin at C-3 and polycyclic alkyl groups begin at C-5. Furthermore, it should be further understood that, unless otherwise indicated, moieties derived from the alkyl groups described below (such as alkoxy and haloalkoxy groups) have the same range of carbon numbers. If the alkyl length is specified differently from that described above, the definition of alkyl described above still applies with respect to all types of alkyl moieties as described above, and structural considerations regarding the minimum number of carbon atoms for a given type of alkyl group still apply.

[0026] Alkyloxy (also known as alkoxy) refers to an alkyl group (e.g., methoxy, ethoxy, propoxy, butoxy, 1,2-isopropoxy, cyclopentoxy, cyclohexyloxy and the like) attached via an oxygen (-O-) moiety. These alkoxy moiety moieties may be substituted or unsubstituted as described below.

[0027] A halogen or halide refers to a halogen, F, Cl, Br, or I that is bonded to an organic part by a single bond.

[0028] Halogenated alkyl groups refer to straight-chain, cyclic, or branched saturated alkyl groups as defined above, wherein if more than one halogen moiety is present, at least one of the hydrogen atoms has been replaced by a halide ion selected from the group consisting of F, Cl, Br, I, or mixtures thereof. Fluoroalkyl groups are specific subgroups of these moiety.

[0029] Fluoroalkyl refers to straight-chain, cyclic, or branched saturated alkyl groups (e.g., trifluoromethyl, perfluoroethyl, 2,2,2-trifluoroethyl, perfluoroisopropyl, perfluorocyclohexyl, and similar groups) that have partially or completely replaced hydrogen as defined above. These fluoroalkyl moieties, if not perfluorinated, may be substituted or unsubstituted as described below.

[0030] Fluoroalkyloxy refers to a fluoroalkyl group (e.g., trifluoromethoxy, perfluoroethoxy, 2,2,2-trifluoroethoxy, perfluorocyclohexyloxy, and the like) attached to an oxygen (-O-) moiety as defined above, which may be fully fluorinated (also known as perfluorination) or alternatively partially fluorinated. If such fluoroalkyl moiety is not perfluorinated, it may be substituted or unsubstituted as described below.

[0031] In this document, when reference is made to alkyl, alkyloxy, fluoroalkyl, or fluoroalkoxy motifs having a possible range of carbon atoms beginning at C-1, such as (for example) "C-1 to C-20 alkyl" or "C-1 to C-20 fluoroalkyl" as non-limiting examples, this scope covers straight-chain alkyl, alkyloxy, fluoroalkyl, and fluoroalkoxy motifs beginning at C-1, but specifically refers only to branched-chain alkyl, branched-chain alkyloxy, cycloalkyl, cycloalkyloxy, branched-chain fluoroalkyl, and cyclofluoroalkyl motifs beginning at C-3.

[0032] The term "alkylene" refers to a hydrocarbon group having two or more attachment sites, which can be straight-chain, branched-chain, or cyclic (e.g., having two attachment sites: methylene, ethylene, 1,2-isopropylene, 1,4-cyclohexylene, and the like; having three attachment sites: 1,1,1-substituted methane, 1,1,2-substituted ethane, 1,2,4-substituted cyclohexane, and the like). Also herein, when referring to a possible range of carbon atoms (such as C-1 to C-20), by non-limiting example, this range covers straight-chain alkylene starting at C-1, but only refers to branched-chain or cycloalkylene starting at C-3. These alkylene moieties may be substituted or unsubstituted as described below.

[0033] As used herein, the term solid component refers to a component that is not a solvent component e), i.e., in one embodiment components a), b), c), and d), and in another embodiment including heterocyclic components f), components a), b), c), d), and f), as appropriate.

[0034] The terms "monoalkyloxyalkylyl" and "oligoalkyloxyalkylyl" encompass simple alkyloxyalkylyl moieties, such as ethyloxyethylyl (-CH 2-CH 2-O-CH 2-CH 2-), propyloxypropylyl (-CH 2-CH 2-CH 2-O-CH 2-CH 2-CH 2-), and the like; and oligomeric materials, such as tri(ethyloxyethylyl) (-CH 2-CH 2-O-CH 2-CH 2-O-CH 2-CH 2-CH 2-), tri(propyloxypropyl) (-CH 2-CH 2-CH 2-O-CH 2-CH 2-CH 2-O-CH 2-CH 2-CH 2-), and the like.

[0035] The term "aryl" or "aromatic group" refers to such groups containing 6 to 24 carbon atoms, including phenyl, tolyl, xylyl, naphthyl, anthracene, biphenyl, diphenyl, triphenyl, and the like. These aryl groups may be further substituted with any suitable substituent (e.g., alkyl, alkoxy, acetyl, or aryl mentioned above).

[0036] The term "phenolic varnish" as used herein without any other structural modifiers refers to phenolic varnish resins soluble in water-containing alkalis, such as tetramethylammonium hydroxide and the like.

[0037] The term "endoaryl" refers to an aromatic hydrocarbon moiety having two or more attachment sites (e.g., 2-5). This moiety can be a single benzene moiety (e.g., two attachment sites: 1,4-endophenyl, 1,3-endophenyl, and 1,2-endophenyl; three attachment sites: 1,2,4-substituted benzene, 1,3,5-substituted benzene, and the like); a polycyclic aromatic moiety having two attachment sites, such as those derived from naphthalene, anthracene, pyrene, and the like; or multiple benzene rings in a chain having two attachment sites (e.g., endophenyl). In cases where the aromatic moiety is a fused aromatic ring, such moiety can be called a fused-ring endoaryl, and more specifically, for example, endonaphthyl, endoanthyl, endopyrene, and the like. Fused cyclopentyl groups may be substituted or unsubstituted as described below. In addition, such fused cyclopentyl groups may also contain hydrocarbon substituents that have two attachment sites on the fused ring forming an additional aliphatic or unsaturated ring, thereby forming a ring with 5 to 10 carbon atoms by attachment to the fused ring.

[0038] Unless otherwise stated, the term "PAG" refers to a photoacid generator capable of producing acid (also known as photoacid) under deep UV or UV irradiation such as 200-300 nm, i-line, h-line, g-line, and / or broadband irradiation. The acid may be sulfonic acid, HCl, HBr, HAsF6, and the like. This includes, as a non-limiting example, photochemically generated onium salts of strong acids and other photosensitive compounds, such as alkyl sulfonic acids, aryl sulfonic acids, HAsF6, HSbF6, HBF4, HPF6, CF3SO3H, HC(SO2CF3)2, HC(SO2CF3)3, HN(SO2CF3)2, HB(C6H5)4, HB(C6F5)4, bis(trifluoromethylphenyl)boronic acid, p-toluenesulfonic acid, HB(CF3)4 trihalomethyl, and photosensitive derivatives of trihalomethyl heterocyclic compounds that may generate hydrogen halides such as HBr or HCl.

[0039] The term "aromatic hydrocarbon" encompasses aromatic hydrocarbon moieties consisting of two to eight carbon-based aromatic rings that consist of one ring or are fused together.

[0040] The term "heteroaromatic hydrocarbon" refers to an aromatic hydrocarbon containing one or more trivalent or divalent heteroatoms in order to retain its aromaticity. Examples of such heteroatoms are N, O, P, and S. As a non-limiting example, such heteroaromatic hydrocarbons may contain one to three such heteroatoms.

[0041] Unless otherwise indicated, in this text, the term "substituted" when referring to aryl, alkyl, alkoxy, fluoroalkyl, fluoroalkoxy, fused aromatic ring, aromatic hydrocarbon, heteroaromatic hydrocarbon means one of these moieties that also contains one or more substituents selected from the group consisting of: unsubstituted alkyl, substituted alkyl, unsubstituted aryl, alkoxyaryl (alkyl-O-aryl-), dialkoxyaryl ((alkyl-O-)2-aryl), haloaryl, alkoxy, alkylaryl, haloalkyl, halide, hydroxyl, cyano, nitro, acetyl, alkylcarbonyl, methyl, vinyl (CH2=CH-), phenyl vinyl (Ph-CH=CH-), aryl vinyl (aryl-CH=CH-), and substituents containing the ethenylenearylene moieties (e.g., Ar(-CH=CH-Ar-)z, where z is 1-3). Specific non-limiting examples of substituted aryl and substituted aryl vinyl substituents are as follows, wherein " " indicates an attachment point: .

[0042] The terms "substituted aryl" and "substituted vinyl" refer to portions in which the substituent is selected from any of the substituents described herein. Similarly, the term "unsubstituted" refers to the same portions in which no substituents other than hydrogen are present.

[0043] In one of its forms, the present invention relates to a composition which is substantially composed of components a), b), c), d), and e), or substantially composed of components a), b), c), d), e), and f), wherein: Component a) is a blend of two phenolic varnish polymers having structures (I) and (II); wherein R1 to R9 are independently selected from C-1 to C-4 alkyl groups, and x, y and z represent mol% of the total number of repeating units in the polymer of structure (I); k, l and m represent mol% of the total number of repeating units in the polymer of structure (II), and further wherein x is in the range of about 10 to about 20 mol%, y is in the range of about 50 to about 60 mol%, z is in the range of about 30 to about 40 mol%, k is in the range of about 10 to about 20 mol%, l is in the range of about 40 to about 50 mol%, and m is in the range of about 30 to about 40 mol%, and further wherein for structure (I), the sum of x, y and z is 100 mol%, and in structure (II), the sum of k, l and m is 100 mol. Furthermore, the weight % solids of the phenolic varnish polymers of the structures (I) and (II) are calculated based on the total weight of solid components a), b), c) and d), each independently ranging from about 23% to about 70% by weight, preferably from about 25% to about 60% by weight, wherein the sum of the individual weight % solids values ​​of these components is 100%.

[0044]

[0045] Component b) is a diazononaphthoquinone sulfonate (DNQ-PAC) component, which is a single material or mixture of materials having a general formula (III) or a general formula (III-1); wherein D1c, D2c, D3c, D4c and D5c are individually selected from H or have a portion having a structure (IV) or (V), and further wherein in structure (III), at least one of D1c, D2c, D3c or D4c is a portion having a structure (IV) or (V), and in structure (III-1), at least one of D1c, D2c, D3c, D4c and D5c is a portion having a structure (IV) or (V). Further wherein this component is in the range of about 9 wt% to about 15 wt%, preferably about 10 wt% to about 15 wt% solids.

[0046] Component c) is a solubilizing agent component containing a polyphenol compound, which is a single compound or a mixture of at least two compounds selected from the group consisting of oligomeric phenolic varnishes, compounds having general formula (VI) and compounds having general formula (VII), wherein R de1, R de2, R de3, R de4 and R de5 are individually selected from C-1 to C-4 alkyl groups; and further wherein this component is in the range of about 4% by weight to about 15% by weight of solids. []

[0047] Component d) is a surfactant in the range of about 0% by weight to about 0.2% by weight in solids.

[0048] Component e) is an organic spin casting solvent.

[0049] Component f) is a heterocyclic thiol.

[0050] Furthermore, this composition, which is basically composed of components a), b), c), d), and e), or components a), b), c), d), e), and f), is a composition that does not contain hexamethylmelamine type crosslinking agent material and photoacid generating agent.

[0051] In one embodiment, the composition is a composition substantially composed of components a), b), c), d), and e).

[0052] In one embodiment, the composition is a composition substantially composed of components a), b), c), d), e), and f).

[0053] In one specific example, the composition is a composition consisting of components a), b), c), d), and e).

[0054] In one embodiment, the composition is a composition consisting of components a), b), c), d), e), and f).

[0055] In one embodiment of the composition of the present invention, component a) is a component in which R1 to R9 are methyl groups.

[0056] In another embodiment of the composition of the present invention described herein, for the polymer of structure (I), x is in the range of about 15 to about 20 mol%, y is in the range of about 50 to about 55 mol%, and z is in the range of about 30 to about 35 mol%.

[0057] In another embodiment of the composition of the present invention relating to the polymer of structure (I), the repeating unit of structure (Ia) having a mole % x in the range of about 10 to about 25 mole % is composed of a mixture of isomeric repeating units having structures (Iax1), (Iax2), (Iax3), (Iax4), (Iax5), and (Iax6), wherein the isomeric repeating units have mole % values ​​of x1, x2, x3, x4, x5, and x6 respectively, based on the total amount of repeating units of structure (Ia), wherein; x1, the mole% value of the repeating unit of structure (Iax1) is in the range of 0 to approximately 5 moles. x2, the mole% value of the repeating unit of the structure (Iax2) is in the range of 0 to about 5 moles. The mole percent value of the repeating units in the x3 structure (Iax3) is in the range of approximately 20 to approximately 25 moles percent. The mole percent value of the repeating units in the x4 structure (Iax4) is in the range of approximately 20 to approximately 25 moles percent. The mole percentage of repeating units in structure x5 (Iax5) is in the range of approximately 20 to approximately 25 moles. The molar percentage of repeating units in structure (Iax6) is in the range of approximately 20 to approximately 25 molar percentages, wherein the sum of x1, x2, x3, x4, x5, and x6 based on the phenolic varnish polymer of structure (I) is approximately 10 to approximately 25 molar percentages, and the sum of x1, x2, x3, x4, x5, x6, y, and z based on the phenolic varnish polymer of structure (I) is equal to 100 molar percentages. .

[0058] In another embodiment of the composition of the present invention relating to the polymer of structure (II), the repeating unit of structure (IIa) having a molar percentage k in the range of about 10 mol% to about 20 mol% is composed of a mixture of isomeric repeating units having structures (IIax1), (IIax2), (IIax3), (IIax4), (IIax5), and (IIax6), wherein the isomeric repeating units have molar percentage values ​​of k1, k2, k3, k4, k5, and k6, respectively, wherein the sum of these molar percentage values ​​is in the range of about 10 mol% to about 20 mol%. The mole percent value of the repeating unit of structure (IIak1) is in the range of approximately 10 to approximately 20 moles percent. The mole percent value of the repeating unit of structure (IIak2) is in the range of 0 to approximately 5 moles percent. The mole percentage of the repeating unit in structure (IIak3) is in the range of 0 to approximately 5 moles. The mole percentage of the repeating units in structure k4 (IIak4) ranges from 0 to approximately 5 moles. The mole percentage of repeating units in structure (IIak5) is in the range of 0 to approximately 5 moles. k6, the mole% value of the repeating unit of structure (IIak6), is in the range of 0 to about 5 moles%, and further wherein the sum of k1, k2, k3, k4, k5, k6, l and m is equal to 100 moles; . [] In another embodiment of the composition of the present invention described, the polymer of structure (II) has a more specific structure (II-1), wherein k1 is in the range of about 10 to about 20 mol%, l is in the range of about 40 to about 50 mol%, m is in the range of about 30 to about 40 mol%, and further wherein for structure (II-1), the sum of k1, l and m is 100 mol.

[0059]

[0060] In another embodiment of the composition of the present invention described herein, it is a composition wherein, for the polymer of structure (II), k is in the range of about 15 to about 20 mol%, l is in the range of about 40 to about 50 mol%, and m is in the range of about 35 to about 40 mol%.

[0061] In another embodiment of the invention, component a) is a component in which the phenolic varnish polymer of structure (I) has a weight percentage of solids ranging from about 23 wt% to about 55 wt% of total solids, and the phenolic varnish polymer of structure (II) has a weight percentage of solids ranging from about 25 wt% to about 56 wt% of total solids, and the combined weight percentage of solids of these two polymer components has a weight percentage of solids ranging from about 75 wt% to about 85 wt%. In another sample, it independently ranges from about 35 wt% to about 50 wt% of solids. In yet another sample of this embodiment, the phenolic varnish polymer of structure (I) ranges from about 23.5 wt% to about 52 wt% of total solids, and the phenolic varnish polymer of structure (II) ranges from about 28 wt% to about 55.5 wt% of total solids.

[0062] In another embodiment of the composition of the present invention described herein, the DNQ PAC is a composition in which, for component b), D1c, D2c, D3c and D4c are individually selected from H or a portion having structure (IV), and further wherein at least one of D1c, D2c, D3c or D4c is a portion having structure (IV).

[0063] In another embodiment of the composition of the present invention described herein, component b), the DNQ PAC is a component in which D 1c, D 2c, D 3c and D 4c are individually selected from H or have a portion having structure (V), and further wherein at least one of D 1c, D 2c, D 3c or D 4c is a portion having structure (V).

[0064] In another embodiment of the composition of the invention described herein, component c), the speed enhancer, is in the range of about 5% to about 15% by weight. In another sample of this embodiment, it is in the range of about 6% to about 14% by weight. In another sample of this embodiment, it is in the range of about 6.5% to about 13% by weight. In another sample of this embodiment, it is in the range of about 6.5% to about 12% by weight.

[0065] In another embodiment of the composition of the present invention described herein, component c), the rate-enhancing agent, is an oligomeric partially separated phenolic varnish. In one embodiment, the rate-enhancing agent is in the range of about 5% to about 14% by weight. In another embodiment, it is in the range of about 5% to about 13% by weight. In another embodiment, it is in the range of about 6.0% to about 12% by weight. In another embodiment, it is in the range of about 6.5% to about 11% by weight. In another embodiment, it is in the range of about 6.5% to about 10% by weight. In another embodiment, it is in the range of about 6.5% to about 10% by weight. In another embodiment, it is in the range of about 6.5% to about 9% by weight. In another embodiment, it is in the range of about 6.5% to about 8% by weight. In one embodiment, it is about 7% by weight.

[0066] In another embodiment of the composition of the invention described herein, component c), the speed enhancer, is a compound of structure (VI), a compound of structure (VII), or a mixture thereof. In one embodiment, in the compound of structure (VI), R de1, R de2, and R de3 are all selected from the same C1 to C4 alkyl groups.

[0067] In another embodiment of the composition of the present invention described herein, component c), the speed enhancer has structure (VI). In one embodiment, the speed enhancer is in the range of about 5% to about 14% by weight. In another embodiment, it is in the range of about 5% to about 13% by weight. In another embodiment, it is in the range of about 6.0% to about 12% by weight. In another embodiment, it is in the range of about 6.5% to about 11% by weight. In another embodiment, it is in the range of about 6.5% to about 10% by weight. In another embodiment, it is in the range of about 6.5% to about 10% by weight. In another embodiment, it is in the range of about 6.5% to about 9% by weight. In another embodiment, it is in the range of about 6.5% to about 8% by weight. In one embodiment, it is about 7% by weight.

[0068] In another embodiment of the composition of the present invention described herein, component c), the speed enhancer, is a mixture of different compounds having structure (VI). In one embodiment, the speed enhancer is in the range of about 5% to about 14% by weight. In another embodiment, it is in the range of about 5% to about 13% by weight. In another embodiment, it is in the range of about 6.0% to about 12% by weight. In another embodiment, it is in the range of about 6.5% to about 11% by weight. In another embodiment, it is in the range of about 6.5% to about 10% by weight. In another embodiment, it is in the range of about 6.5% to about 10% by weight. In another embodiment, it is in the range of about 6.5% to about 9% by weight. In another embodiment, it is in the range of about 6.5% to about 8% by weight. In one embodiment, it is about 7% by weight.

[0069] In another embodiment of the composition of the present invention described herein, component c), the speed enhancer has structure (VII). In one embodiment, the speed enhancer is in the range of about 5% to about 15% by weight. In another embodiment, it is in the range of about 6% to about 14% by weight. In another embodiment, it is in the range of about 7% to about 13% by weight. In another embodiment, it is in the range of about 8% to about 12.5% ​​by weight. In another embodiment, it is in the range of about 8% to about 12.5% ​​by weight. In another embodiment, it is in the range of about 9% to about 12.5% ​​by weight. In another embodiment, it is in the range of about 10% to about 12.5% ​​by weight. In another embodiment, it is in the range of about 11% to about 12.5% ​​by weight. In another embodiment, it is about 12% by weight.

[0070] In another embodiment of the composition of the invention described herein, component c), the speed enhancer, is a mixture of different compounds having structure (VII). In another sample of this embodiment, it ranges from about 6% to about 14% by weight. In another sample of this embodiment, it ranges from about 7% to about 13% by weight. In another sample of this embodiment, it ranges from about 8% to about 12.5% ​​by weight. In another sample of this embodiment, it ranges from about 8% to about 12.5% ​​by weight. In another sample of this embodiment, it ranges from about 9% to about 12.5% ​​by weight. In another sample of this embodiment, it ranges from about 10% to about 12.5% ​​by weight. In another sample of this embodiment, it ranges from about 11% to about 12.5% ​​by weight. In another sample of this embodiment, it is about 12% by weight.

[0071] In another embodiment of the composition of the present invention described herein, component c), the speed enhancer is a mixture of speed enhancers of structures (VI) and (VII).

[0072] In another embodiment of the composition of the present invention described herein, component c), the velocity enhancer is selected from velocity enhancers having structure (VIa) or structure (VIIa), or a mixture of velocity enhancers having structures (VIa) and (VIIa). In another embodiment, it has structure (VIa). In another embodiment, the velocity enhancer has structure (VIIa). In another embodiment, the velocity enhancer is a mixture of structures (VIa) and (VIIa).

[0073] In another embodiment of the composition of the present invention described herein, component c), the speed enhancer has structure (VIa) and is in the range of about 5% to about 14% by weight. In another sample of this embodiment, it is in the range of about 5% to about 13% by weight. In another sample of this embodiment, it is in the range of about 6.0% to about 12% by weight. In another sample of this embodiment, it is in the range of about 6.5% to about 11% by weight. In another sample of this embodiment, it is in the range of about 6.5% to about 10% by weight. In another sample of this embodiment, it is in the range of about 6.5% to about 10% by weight. In another sample of this embodiment, it is in the range of about 6.5% to about 9% by weight. In another sample of this embodiment, it is in the range of about 6.5% to about 8% by weight. In one sample of this embodiment, it is about 7% by weight. In another embodiment of the composition of the present invention described herein, component c), the speed enhancer has structure (VIIa) and is in the range of about 6 wt% to about 14 wt%. In another sample of this embodiment, it is in the range of about 7 wt% to about 13 wt%. In another sample of this embodiment, it is in the range of about 8 wt% to about 12.5 wt%. In another sample of this embodiment, it is in the range of about 8 wt% to about 12.5 wt%. In another sample of this embodiment, it is in the range of about 9 wt% to about 12.5 wt%. In another sample of this embodiment, it is in the range of about 10 wt% to about 12.5 wt%. In another sample of this embodiment, it is in the range of about 11 wt% to about 12.5 wt%. In another sample of this embodiment, it is about 12 wt%. (VIa) (VIIa) [Components] [d] [)] [Surfactants] []

[0074] In another embodiment of the composition of the present invention described in component d) with respect to the surfactant, there are no specific limitations on the surfactant, and examples include: polyethylene oxide alkyl ethers, such as polyethylene lauryl ether, polyethylene octadecyl ether, polyethylene hexadecyl ether, and polyethylene oleoresin ether; polyethylene oxide alkyl aryl ethers, such as polyethylene octylphenol ether and polyethylene nonylphenol ether; polyethylene oxide polyoxypropylene block copolymers; sorbitan fatty acid esters, such as sorbitan monolaurate, sorbitan monopalmitate, and sorbitan monostearate; nonionic surfactants of polyethylene oxide sorbitan fatty acid esters, such as polyethylene oxide sorbitan monolaurate, polyethylene oxide sorbitan monopalmitate, polyethylene oxide sorbitan monostearate, polyethylene oxide sorbitan trioleate, and polyethylene oxide sorbitan tristearate; fluorinated surfactants, such as F-Top EF301, EF303 and EF352 (manufactured by Jemco Ltd.), Megafac F171, F172, F173, R08, R30, R90 and R94 (manufactured by Dainippon Ink & Chemicals Ltd.), Florad FC-430, FC-431, FC-4430 and FC-4432 (manufactured by Sumitomo 3M Ltd.), Asahi Guard AG710, Surflon S-381, S-382, S-386, SC101, SC102, SC103, SC104, SC105, SC106, Surfinol E1004, KH-10, KH-20, KH-30 and KH-40 (manufactured by Asahi Ltd.). (manufactured by Glass Ltd.); organosiloxane polymers, such as KP-341, X-70-092 and X-70-093 (manufactured by Shin-Etsu Chemical Ltd.); and acrylic or methacrylic polymers, such as Polyflow No. 75 and No. 95 (manufactured by Kyoeisha Chemical Co. Ltd.).

[0075] In another embodiment of the composition of the present invention described herein, the total weight of components a), b), c), and d), or a), b), c), d), and f), when combined with solvent component e), produces a total wt% of such solid components in the solvent in the range of about 30% to about 40%.

[0076] In another embodiment of the above composition, component e) the organic spin casting solvent comprises one or more of the following: butyl acetate, amyl acetate, cyclohexyl acetate, 3-methoxybutyl acetate, methyl ethyl ketone, methyl pentyl ketone, cyclohexanone, cyclopentanone, ethyl 3-ethoxypropionate, methyl 3-ethoxypropionate, methyl 3-methoxypropionate, methyl acetoacetate, ethyl acetoacetate, diacetone alcohol, methyl pivalate, ethyl pivalate, propylene glycol monomethyl ether (PGME), propylene glycol monoethyl ether, propylene glycol monomethyl ether, etc. The solvent component comprises propylene glycol monoethyl ether propionate, propylene glycol monoethyl ether propionate, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, 3-methyl-3-methoxybutanol, N-methylpyrrolidone, dimethyl sulfoxide, γ-butyrolactone, propylene glycol methyl ether acetate (PGMEA), propylene glycol ethyl ether acetate, propylene glycol propyl ether acetate, methyl lactate, ethyl lactate, propyl lactate, tetramethylene sulfoxide, propylene glycol dimethyl ether, dipropylene glycol dimethyl ether, ethylene glycol dimethyl ether, or diethylene glycol dimethyl ether and γ-butyrolactone. In one embodiment of this example, the solvent component comprises propylene glycol monomethyl ether (PGME). In another embodiment of this example, the solvent component comprises propylene glycol monomethyl ether acetate (PGMEA). [Components] [f] [)] Heterocyclic thiols []

[0077] In one embodiment of the composition of the present invention described above, it further comprises at least one heterocyclic thiol component, selected as appropriate. In one embodiment, the heterocyclic thiol component is at least one heterocyclic thiol compound comprising a ring structure selected from the general structures (H1), (H2), or (H3), or a tautomer thereof; and the ring structure is a monocyclic structure having 4 to 8 atoms or a polycyclic structure having 5 to 20 atoms; wherein the monocyclic or polycyclic structure comprises an aromatic, non-aromatic, or heteroaromatic ring. In the structure (H1), Xt is selected from the group consisting of N (Rt3), C (Rt1)(Rt2), O, S, Se, and Te. In the structure (H2), Y is selected from the group consisting of C (Rt3) and N. In the structure (H3), Z is selected from the group consisting of C (Rt3) and N. In these structures, Rt1, Rt2, and Rt3 are independently selected from the group consisting of: H, substituted alkyl groups having 1 to 8 carbon atoms, unsubstituted alkyl groups having 1 to 8 carbon atoms, substituted alkenyl groups having 2 to 8 carbon atoms, unsubstituted alkenyl groups having 2 to 8 carbon atoms, substituted alkynyl groups having 2 to 8 carbon atoms, unsubstituted alkynyl groups having 2 to 8 carbon atoms, substituted aromatic groups having 6 to 20 carbon atoms, substituted heteroaromatic groups having 3 to 20 carbon atoms, unsubstituted aromatic groups having 6 to 20 carbon atoms, and unsubstituted heteroaromatic groups having 3 to 20 carbon atoms. In one embodiment, the heterocyclic thiol compound is present in a total solids content of about 0.5% by weight to about 1.5% by weight.

[0078] In another embodiment where the composition of the present invention comprises at least one heterocyclic thiol selected from the above-described general structures (H1), (H2), or (H3) or its tautomers, such heterocyclic thiols may be selected from, but are not limited to, substituted or unsubstituted triazole thiols, substituted or unsubstituted imidazolium thiols, substituted or unsubstituted triazine thiols, substituted or unsubstituted mercaptopyrimidines, substituted or unsubstituted thiadiazole-thiols, substituted or unsubstituted indazole thiols, their tautomers, or combinations thereof. Substituents may include (but are not limited to) saturated or unsaturated hydrocarbon groups, substituted or unsubstituted aromatic rings, aliphatic, aromatic or heteroaromatic alcohols, amines, amides, amides, amide-iminocarboxylic acids, esters, ethers, halides, and the like. Such substituents may be used in combination with heterocyclic thiols to improve solubility, modify interaction with the substrate, promote exposure to light, or act as anti-halation dyes.

[0079] In another embodiment where the composition of the present invention comprises at least one heterocyclic thiol selected from the above general structures (H1), (H2) or (H3) or a tautomer thereof, such heterocyclic thiol may be selected from (but not limited to) the following compounds (H4) to (H23) in unsubstituted or substituted forms:

[0080] In another embodiment of the present invention composition comprising at least one heterocyclic thiol having a common structure (H1), (H2) or (H3) or a tautomer thereof, such heterocyclic thiol may be selected from thiouracil derivatives, such as 2-thiouracil.These include (but are not limited to): 5-methyl-2-thiouracil, 5,6-dimethyl-2-thiouracil, 6-ethyl-5-methyl-2-thiouracil, 6-methyl-5-n-propyl-2-thiouracil, 5-ethyl-2-thiouracil, 5-n-propyl-2-thiouracil, 5-n-butyl-2-thiouracil, 5-n-hexyl-2-thiouracil, 5-n-butyl-6-ethyl-2-thiouracil 5-Hydroxy-2-thiouracil, 5,6-Dihydroxy-2-thiouracil, 5-Hydroxy-6-n-propyl-2-thiouracil, 5-Methoxy-2-thiouracil, 5-n-Butoxy-2-thiouracil, 5-Methoxy-6-n-propyl-2-thiouracil, 5-Bromo-2-thiouracil, 5-Chloro-2-thiouracil, 5-Fluoro-2-thiouracil, 5-Amino-2-thiouracil, 5-Amino-6-Methyl-2-thiouracil, 5-Amino-6-Phenylene-2-thiouracil, 5,6-Diamino-2-thiouracil, 5-Allyl-2-thiouracil, 5-Allyl-3-Ethyl-2-thiouracil, 5-Allyl-6-Phenylene-2-thiouracil, 5-Benzyl-2-thiouracil, 5-Benzyl- 6-Methyl-2-thiouracil, 5-acetamino-2-thiouracil, 6-methyl-5-nitro-2-thiouracil, 6-amino-2-thiouracil, 6-amino-5-methyl-2-thiouracil, 6-amino-5-n-propyl-2-thiouracil, 6-bromo-2-thiouracil, 6-chloro-2-thiouracil, 6-fluoro-2-thiouracil, 6-bromo-5-methyl-2-thiouracil, 6-hydroxy-2- Thioururacil, 6-acetaminophen-2-thiouracil, 6-n-octyl-2-thiouracil, 6-dodecyl-2-thiouracil, 6-tetradodecyl-2-thiouracil, 6-hexadecyl-2-thiouracil, 6-(2-hydroxyethyl)-2-thiouracil, 6-(3-isopropyloctyl)-5-methyl-2-thiouracil, 6-(m-nitrophenyl)-2-thiouracil, 6-(m-... Nitrophenyl)-5-n-propyl-2-thiouracil, 6-α-naphthyl-2-thiouracil, 6-α-naphthyl-5-tert-butyl-2-thiouracil, 6-(p-chlorophenyl)-2-thiouracil, 6-(p-chlorophenyl)-2-ethyl-2-thiouracil, 5-ethyl-6-eicosyl-2-thiouracil, 6-acetaminophen-5-ethyl-2-thiouracil, 6-eicosyl-5-allyl-2-thiouracil, 5-Amino-6-phenyl-2-thiouracil, 5-amino-6-(p-chlorophenyl)-2-thiouracil, 5-methoxy-6-phenyl-2-thiouracil, 5-ethyl-6-(3,3-dimethyloctyl)-2-thiouracil, 6-(2-bromoethyl)-2-thiouracil, 1-phenyl-1H-tetrazole-5-thiol, 4-(5-mercapto-1H-tetrazole-1-yl)phenol, their tautomers and combinations thereof.

[0081] In another embodiment where the composition of the present invention comprises at least one heterocyclic thiol selected from the above-described general structures (H1), (H2) or (H3) or its tautomers, such heterocyclic thiol may be selected from the group consisting of: unsubstituted triazole thiol, substituted triazole thiol, unsubstituted imidazolium thiol, substituted imidazolium thiol, substituted triazolium thiol, unsubstituted triazolium thiol, substituted mercaptopyrimidine, unsubstituted mercaptopyrimidine, substituted thiadiazole-thiol, unsubstituted thiadiazole-thiol, substituted indazole thiol, unsubstituted indazole thiol, its tautomers and combinations thereof.

[0082] In another embodiment of the heterocyclic thiol, which comprises component g), this is at least one heterocyclic thiol selected from the above-described general structures (H1), (H2), or (H3) or its tautomers, such heterocyclic thiols may be selected from the group consisting of: 1,3,5-tris(2,4,6)-trithiol, 2-mercapto-6-methylpyrimidin-4-ol, 3-mercapto-6-methyl-1,2,4-tris(5,5)-ol, 2-mercaptopyrimidin-4,6-diol, 1H-1,2,4-triazol-3-thiol, 1H-1,2,4-triazol-5-thiol, 1H-imidazol-2-thiol, 1H-imidazol-5-thiol, 1H-imidazol-4-thiol, 2-azabicyclo[3.2.1]oct-2-en-3-thiol, 2-azabicyclo[2.2.1]hept-2-en-3-thiol, 1H-benzo[d]imidazol-2-thiol, 2-mercapto-6-methylpyrimidin-4-ol, 2-mercaptopyrimidin-4-ol, 1-methyl-1H-imidazol-2-thiol, 1,3,4-thiadiazole-2,5-dithiol, 1H-indazole-3-thiol, 1-phenyl-1H-tetrazole-5-thiol, 4-(5-mercapto-1H-tetrazole-1-yl)phenol, their tautomers and combinations thereof.

[0083] In another embodiment of this composition, it comprises at least one heterocyclic thiol selected from the above-described general structures (H1), (H2), or (H3), wherein the heterocyclic thiol is loaded in a manner ranging from about 0.001 wt% to about 1.5 wt% of the total solids. In another embodiment of this composition, the heterocyclic thiol is loaded in a manner ranging from about 0.010 wt% to about 1.5 wt% of the total solids. In another embodiment of this composition, the heterocyclic thiol is loaded in a manner ranging from about 0.1 wt% to about 1.5 wt% of the total solids. In another embodiment of this composition, the heterocyclic thiol is loaded in a manner ranging from about 0.2 wt% to about 1.5 wt% of the total solids. In another embodiment of this composition, the heterocyclic thiol is loaded in a manner ranging from about 0.3 wt% to about 1.5 wt% of the total solids. In another embodiment of this composition, the heterocyclic thiol compound is loaded in a manner ranging from about 0.4 wt% to about 1.5 wt% of the total solids. In another sample of this embodiment, the heterocyclic thiol is in the range of about 0.6 wt% to about 1.4 wt% of the total solids. In another sample of this embodiment, the heterocyclic thiol is in the range of about 0.7 wt% to about 1.3 wt% of the total solids. In another sample of this embodiment, the heterocyclic thiol compound is in the range of about 0.8 wt% to about 1.2 wt% of the total solids. In another sample of this embodiment, the heterocyclic thiol compound is in the range of about 0.9 wt% to about 1.1 wt% of the total solids. In another sample of this embodiment, the heterocyclic thiol compound is about 1 wt% of the total solids.

[0084] In another embodiment of this composition, it comprises at least one heterocyclic thiol selected from the above-described general structures (H1), (H2), or (H3), wherein the heterocyclic thiol compound is in the range of about 0.01 wt% to about 0.49 wt% of the total solids. In another embodiment of this composition, the heterocyclic thiol compound is in the range of about 0.04 wt% to about 0.49 wt% of the total solids. In another embodiment of this composition, the heterocyclic thiol compound is in the range of about 0.08 wt% to about 0.49 wt% of the total solids. In another embodiment of this composition, the heterocyclic thiol compound is in the range of about 0.09 wt% to about 0.49 wt% of the total solids. In another embodiment of this composition, the heterocyclic thiol compound is in the range of about 0.10 wt% to about 0.49 wt% of the total solids. In another sample of this embodiment, the heterocyclic thiol compound is present in the range of about 0.15 wt% to about 0.49 wt% of the total solids. In another sample of this embodiment, the heterocyclic thiol compound is present in the range of about 0.20 wt% to about 0.49 wt% of the total solids. In another sample of this embodiment, the heterocyclic thiol compound is present in the range of about 0.25 wt% to about 0.48 wt% of the total solids. In another sample of this embodiment, the heterocyclic thiol compound is present in the range of about 0.30 wt% to about 0.47 wt% of the total solids. In another sample of this embodiment, the heterocyclic thiol compound is present in the range of about 0.30 wt% to about 0.47 wt% of the total solids. In another sample of this embodiment, the heterocyclic thiol compound is present in the range of about 0.30 wt% to about 0.49 wt% of the total solids. In another sample of this embodiment, the heterocyclic thiol compound is present in the range of about 0.30 wt% to about 0.45 wt% of the total solids. In another sample of this embodiment, the heterocyclic thiol compound is present in the range of about 0.30 wt% to about 0.45 wt% of the total solids. In another sample of this embodiment, the heterocyclic thiol compound is present in the range of about 0.30 wt% to about 0.45 wt% of the total solids. In another sample of this embodiment, the heterocyclic thiol compound is present in the range of about 0.30 wt% to about 0.44 wt% of the total solids. In another sample of this embodiment, the heterocyclic thiol compound is present in the range of about 0.30 wt% to about 0.43 wt% of the total solids. In another sample of this embodiment, the heterocyclic thiol compound is present in the range of about 0.30 wt% to about 0.42 wt% of the total solids. In another sample of this embodiment, the heterocyclic thiol compound is present in the range of about 0.30 wt% to about 0.41 wt% of the total solids. In another sample of this embodiment, the heterocyclic thiol compound is present in the range of about 0.30 wt% to about 0.40 wt% of the total solids. In another sample of this embodiment, the heterocyclic thiol compound is about 0.35% by weight of the total solids. [Components] [e] [)] [Organic spin casting solvent] []

[0085] The photosensitive compositions disclosed herein are soluble in organic solvents. Examples of suitable organic solvents include (but are not limited to): butyl acetate, amyl acetate, cyclohexyl acetate, 3-methoxybutyl acetate, methyl ethyl ketone, methyl pentyl ketone, cyclohexanone, cyclopentanone, ethyl 3-ethoxypropionate, methyl 3-ethoxypropionate, methyl 3-methoxypropionate, methyl acetoacetate, ethyl acetoacetate, diacetone alcohol, methyl pivalate, ethyl pivalate, propylene glycol monomethyl ether, propylene glycol monoethyl ether, propylene glycol monomethyl ether propionate, propylene glycol monoethyl ether propionate. Ester, ethylene glycol monomethyl ether, ethylene glycol monoethyl ether, diethylene glycol monomethyl ether, diethylene glycol monoethyl ether, 3-methyl-3-methoxybutanol, N-methylpyrrolidone, dimethyl sulfoxide, γ-butyrolactone, propylene glycol methyl ether acetate (PGMEA), propylene glycol ethyl ether acetate, propylene glycol propyl ether acetate, methyl lactate, ethyl lactate, propyl lactate, tetramethylene sulfoxide, propylene glycol dimethyl ether, dipropylene glycol dimethyl ether, ethylene glycol dimethyl ether or diethylene glycol dimethyl ether, γ-butyrolactone. These solvents can be used alone or in mixtures of two or more. [Other components may be selected depending on the circumstances] []

[0086] In one embodiment of the above-described composition of the present invention, it further comprises at least one surface leveling agent, which may include a surfactant. In this embodiment, there are no specific limitations on the surfactant, and examples include: polyoxyethylene alkyl ethers, such as polyoxyethylene dodecyl ether, polyoxyethylene octadecyl ether, polyoxyethylene hexadecyl ether, and polyoxyethylene oleoresin ether; polyoxyethylene alkyl aryl ethers, such as polyoxyethylene octylphenol ether and polyoxyethylene nonylphenol ether; polyoxyethylene polyoxypropylene block copolymers; dehydrated sorbitan fatty acid esters, such as dehydrated sorbitan monolaurate, dehydrated sorbitan monopalmitate, and dehydrated sorbitan monostearate; nonionic surfactants of polyoxyethylene dehydrated sorbitan fatty acid esters, such as polyoxyethylene dehydrated sorbitan monolaurate, polyoxyethylene dehydrated sorbitan monopalmitate, polyoxyethylene dehydrated sorbitan monostearate, polyethylene dehydrated sorbitan trioleate, and polyoxyethylene dehydrated sorbitan tristearate; fluorinated surfactants, such as F-Top EF301, EF303, and EF352 (manufactured by Jemco Inc.), Megafac F171, F172, F173, R08, R30, R90 and R94 (manufactured by Dainippon Ink & Chemicals, Inc.), Florad FC-430, FC-431, FC-4430 and FC-4432 (manufactured by Sumitomo 3M Ltd.), Asahi Guard AG710, Surflon S-381, S-382, S-386, SC101, SC102, SC103, SC104, SC105, SC106, Surfinol E1004, KH-10, KH-20, KH-30 and KH-40 (manufactured by Asahi Glass Co., Ltd.); organosiloxane polymers, such as KP-341, X-70-092 and X-70-093 (manufactured by Shin-Etsu Chemical Co., Ltd.). (manufactured by Kyoisha Chemical Co., Ltd.); and acrylic or methacrylic acid polymers, such as Polyflow No. 75 and No. 95 (manufactured by Kyoisha Chemical Co., Ltd.). When the surfactant is present in one embodiment, it is in the range of about 0.01% by weight to about 0.3% by weight of the total solids. [Processing] []

[0087] Another aspect of the present invention is a method for coating any of the compositions described herein onto a substrate.

[0088] Another aspect of the present invention is a method for imaging a photoresist, comprising the following steps: i) Coating any of the compositions described herein onto a substrate to form a photoresist film; ii) Selectively expose the photoresist film to UV light using a mask to form a selectively exposed photoresist film; iii) Develop the selectively exposed film to form a photoresist film for positive imaging over the substrate.

[0089] Another aspect of the present invention is a method for imaging a photoresist, comprising the following steps: ia) Coating any of the compositions described herein onto a substrate to form a photoresist film; iia) The photoresist film is selectively exposed to UV light using a mask to form a selectively exposed photoresist film; iiia) Bake the selectively exposed photoresist film to form a baked selectively exposed photoresist film; (iva) The selectively exposed and baked photoresist film is developed to form a positive imaging photoresist film over the substrate. Another aspect of the invention is the use of the compositions described herein for coating a substrate or for preparing an imaging photoresist film on a substrate. [Example]

[0090] More specific embodiments of the invention will now be described with reference to experimental results supporting these embodiments. Examples are given below to illustrate the disclosed subject matter more fully and should not be construed as limiting the disclosed subject matter in any way.

[0091] Those skilled in the art will readily recognize that various modifications and variations can be made to the disclosed subject matter and the specific examples provided herein without departing from the spirit or scope of the disclosed subject matter. Therefore, the disclosed subject matter (including the descriptions provided in the examples below) is intended to encompass modifications and variations of the disclosed subject matter that appear within the scope of any patent claim and its equivalents. [Coating of the compound:] []

[0092] All formulations were tested on 6" or 8" diameter Si and Cu wafers. The Si wafers were rehydrated and baked and undercoated with hexamethyldisilazane (HMDS) vapor. The Cu wafers were silicon wafers coated with 5,000 Å of silicon dioxide, 250 Å of tantalum nitride, and 3,500 Å of Cu (PVD deposition). []

[0093] Photoresist coatings were prepared by spin-coating a sample of photoresist and then applying a soft bake at 110°C for 120 seconds on a standard wafer coating and developing hot plate in contact mode. The spin speed was adjusted to obtain photoresist films with thicknesses ranging from 5 to 10 micrometers. All film thicknesses were measured using optical metrology on the Si wafer. [] [Imaging] [:] []

[0094] Expose the wafer onto a SUSS MA200 CC mask aligner or an ASML 250 i-line stepper. Allow the photoresist to stand for 10–60 min without post-exposure baking, then develop it in pits at 23°C in AZ 300 MIF (0.26N aqueous solution of tetramethylammonium hydroxide = TMAH) for 120–360 seconds. Examine the developed photoresist image using a Hitachi S4700 or AMRAY 4200L electron microscope. [] [Material] []

[0095] SPN400 Slow is a polymer of m-cresol / p-cresol / xylenol / formaldehyde phenolic varnish, sold under the name Alnovol SPN 400 44% PGMEA, supplied by Allnex USA Inc. This phenolic varnish has an average molecular weight (MW) of 18,282. The dissolution rate of this phenolic varnish in 0.26 N TMAH aqueous developer is 63 Å / s. MIPHOTO NOVOL T106S is a polymer of m-cresol / p-cresol / trimethylphenol / formaldehyde phenolic varnish, sold under the name MIPHOTO NOVOL T106S, supplied by Miwon Commercial Co., Ltd. This phenolic varnish has an average molecular weight (MW) of 8,136 and a PDI of 6.51. The dissolution rate of this phenolic varnish in 0.26 N TMAH aqueous developer is 309 Å / s. MIPHOTO PAC BP524 is a DNQ PAC sold by Miwon Commercial Co., Ltd under this name. It is a mixture of materials having general formula (III), wherein D1c, D2c, D3c and D4c are individually selected from H or have a structure (IV), wherein at least one of D1c, D2c, D3c or D4c is a part having a structure (IV). []

[0096] BI26X-SA is bis(4-hydroxy-3,5-dimethylphenyl)-2-hydroxyphenylmethane, a solubility enhancer sold by Asahi Yukizai Co., Ltd under this name. []

[0097] TPPA (4,4'-(1-(4-(2-(4-hydroxyphenyl)prop-2-yl)phenyl)ethane-1,1-diyl)diphenol) is sold by Millipore Sigma USA, a subsidiary of Merck KGaA (Darmstadt, Germany).

[0098] APS-437 (also known as KF-353A) is a surfactant from Shinetsu (Tokyo, Japan). []

[0099] PGMEA (1-methoxy-2-propyl acetate), used as a solvent in examples of photoresist formulations, was obtained from a subsidiary of Sigma-Aldrich, Merck KGaA (Darmstadt, Germany). []

[0100] The AZ 300MIF developer is sourced from a subsidiary of EMD Performance Materials Corp, Merck KGaA (Darmstadt, Germany) (also known as 2.38% Tetramethylammonium hydroxide (TMAH)).

[0101] Unless otherwise stated, all other chemicals were obtained from Millipore Sigma USA, a subsidiary of Merck KGaA (Darmstadt, Germany).

[0102] The molecular weight of the polymer was measured using gel permeation chromatography (GPC).

[0103] The phenolic varnish / DNQ photoresist composition comprises two phenolic varnish resins, a DNQ photosensitive compound, a solubility enhancer, a surfactant, and a solvent. The two phenolic varnish resins used in the photoresist composition are composed of different monomers and in different proportions. The photoresist is spin-coated onto a silicon wafer, soft-baked on a hot plate, and subsequently exposed using a gh-line or i-line stepper. The exposed wafer is then developed using AZ® 300MIF developer to remove the exposed areas. Finally, the wafer is rinsed with deionized water and then spin-dried to obtain the photoresist pattern. [Comparison Examples] [1] [(] [H476] [-] [SPN400] [] [Slow] [、] [BP524] [、] [BI26X] [-] [SA] [、] [APS437] [、] [PGMEA] [)] [:] []

[0104] A phenolic varnish / DNQ photoresist composition was prepared by dissolving 64.54 g of a 42.7% PGMEA solution of phenolic varnish resin SPN400 Slow, 4.69 g of MIPHOTO PAC BP524, 2.76 g of solubility enhancer BI26X-SA, and 0.42 g of a 10.0% PGMEA solution of surfactant APS-437 (also known as KF-353A) in 28.02 g of propylene glycol monomethyl ether acetate (PGMEA). Therefore, a positive photoresist composition with a solid content of 35.0% by weight was prepared. The photoresist composition was spin-coated onto a silicon wafer substrate and soft-baked at 110°C for 120 seconds to obtain a film with a thickness of 5.0 µm. Next, the coated film was exposed via an ASML i-line stepper (NA=0.48, σ=0.55) through a pattern mask used for resolution measurement, followed by exposure-to-bake (PEB) at 100°C for 60 seconds, and then developed in 3 pits for 60 seconds (3×60 seconds) with AZ® 300MIF developer (2.38% TMAH, tetramethylammonium hydroxide aqueous solution). A top CD of 0.551 µm and a bottom CD of 1.151 µm were observed at a resolution of 1.0 µm L / S (line / space) at 360 mJ / cm². [Solid Raw Materials] [%] [-] Phenolic varnish resin PN400 Slow: 78.6458% MIPHOTO PAC BP524: 13.3698% Speed ​​enhancer BI26X-SA: 7.8646% Surfactant APS437 (KF353A): 0.1199% Solid content: 35.04% [Comparison Examples] [2] [(] [H457] [-] [T106S] [,] [BP524] [,] [BI26X] [-] [SA] [,] [APS437] [,] [PGMEA] [)] [:] []

[0105] A phenolic varnish / DNQ photoresist composition was prepared using a 30.0% PGMEA solution (94.61 g) of mixed phenolic varnish resin MIPHOTO NOVOL T106S, 3.97 g of MIPHOTO PAC BP524, 1.42 g of solubility enhancer BI26X-SA, and a 10.0% PGMEA solution (also known as KF-353A, 0.41 g) of surfactant APS-437. Therefore, a positive photoresist composition with a solids content of 33.82% by weight was prepared. This composition was evaluated in the same manner as in Comparative Example 1. The 1.0 µm L / S (line / space) resolution at 100 mJ / cm² showed a top CD of 0.832 µm and a bottom CD of 0.716 µm. [Solid Raw Materials] [%]- [] MIPHOTO NOVOL T106S: 83.9329% MIPHOTO PAC BP524: 11.7506% Speed ​​enhancer BI26X-SA: 4.1967% Surfactant APS437 (KF353A): 0.1199% Solid content: 33.8153% [Example] [1]( [Comparison Examples] [1] [ / ] [Comparison Examples] [2] [=]

[66] [ / ]

[34] [,] [Solid content ratio]) [。] []

[0106] A phenolic varnish / DNQ photoresist composition was prepared by mixing Comparative Example 1 (32.53 g) and Comparative Example 2 (17.37 g). Therefore, a positive photoresist composition with a solids content of 34.50 wt% was prepared. This composition was evaluated in the same manner as in Comparative Example 1. The 1.0 µm L / S (line / space) resolution at 240 mJ / cm² showed a top CD of 0.725 µm and a bottom CD of 1.180 µm. [Solid Raw Materials] [% -] Phenolic varnish resin SPN400 Slow: 51.9063% Phenolic varnish resin MIPHOTO NOVOL T106S: 28.5371% MIPHOTO PAC BP524: 12.8191% Speed ​​enhancer BI26X-SA: 6.6176% Surfactant APS437 (KF353A): 0.1198% Solid content: 34.50% [Example] [2]( [Comparison Examples] [1] [ / ] [Comparison Examples] [2] [=]

[50] [ / ]

[50] [,] [Solid content ratio]) [。] []

[0107] A phenolic varnish / DNQ photoresist composition was prepared by mixing Comparative Example 1 (24.55 g) and Comparative Example 2 (25.45 g). Therefore, a positive photoresist composition with a solids content of 34.38% by weight was prepared. This composition was evaluated in the same manner as in Comparative Example 1. The 1.0 µm L / S (line / space) resolution at 200 mJ / cm² showed a top CD of 0.764 µm and a bottom CD of 1.112 µm. [Solid Raw Materials] [% -] [] Phenolic varnish resin SPN400 Slow: 39.323% Phenolic varnish resin MIPHOTO NOVOL T106S: 41.966% MIPHOTO PAC BP524: 12.56% Speed ​​enhancer BI26X-SA: 6.031% Surfactant APS437 (KF353A): 0.119% Solid content: 34.38% [Example] [3]( [Comparison Examples] [1] [ / ] [Comparison Examples] [2] [=]

[34] [ / ]

[66] [, solid content ratio]) [。] []

[0108] A phenolic varnish / DNQ photoresist composition was prepared by mixing Comparative Example 1 (16.60 g) and Comparative Example 2 (33.40 g). Therefore, a positive photoresist composition with a solids content of 34.18% by weight was prepared. This composition was evaluated in the same manner as in Comparative Example 1. The 1.0 µm L / S (line / space) resolution at 140 mJ / cm² showed a top CD of 0.861 µm and a bottom CD of 1.151 µm. [] [Solid Raw Materials] [% -] Phenolic varnish resin SPN400 Slow: 26.7396% Phenolic varnish resin MIPHOTO NOVOL T106S: 55.3955% MIPHOTO PAC BP524: 12.3012% Speed ​​enhancer BI26X-SA: 5.4438% Surfactant APS437 (KF353A): 0.1199% Solid content: 34.18% [Example] [4]

[0109] A phenolic varnish / DNQ photoresist composition was prepared by mixing a 42.7% PGMEA solution (21.15 g) of phenolic varnish resin SPN400 Slow, a 30.01% PGMEA solution of phenolic varnish resin MIPHOTO NOVOL T106S (66.21 g), 3.71 g of MIPHOTO PAC BP524, 4.47 g of solubility enhancer TPPA, 0.375 g of adhesive additive PMT, a 10.0% PGMEA solution of surfactant APS-437 (also known as KF-353A, 0.446 g), and 3.636 g of PGMEA. Therefore, a positive photoresist composition with a solid content of 37.5% by weight was prepared. [Solid Raw Materials] [% -] [] Phenolic varnish resin SPN400 Slow: 24.088% Phenolic varnish resin MIPHOTO NOVOL T106S: 52.987% MIPHOTO PAC BP524: 9.899% Speed ​​enhancer TPPA: 11.907% Adhesive additive PMT: 1.00% Surfactant APS437 (KF353A): 0.119% Solid content: 37.5%

[0110] Figure 1 compares the depth of focus (DOF) curves of Example 2 and Comparative Example 1 side by side in the graph, highlighting the unexpected improvement of our novel formulation as described in this paper.

[0111] Figure 2 shows a scanning electron micrograph (SEM) study, which demonstrates the good depth of focus (DOF) of Example 2 when coated with a film thickness of 5 µm and imaged. []

[0112] Figure 3 shows the scanning electron micrograph (SEM) study, which demonstrates the good linearity of Example 2 when coated with a film thickness of 5 µm and imaged. []

[0113] Figure 4 shows Table 1, which provides an overview of the etching performance of Examples 1, 2 and 3 compared to Comparative Example 1, further highlighting the unexpected improvement of our novel formulation as described herein.

Claims

1. A composition comprising substantially components a), b), c) and e), or substantially components a), b), c), d) and e), or substantially components a), b), c), e) and f), or substantially components a), b), c), d), e) and f). A blend of two phenolic varnish polymers having structures (I) and (II); wherein R1 to R9 are independently selected from C-1 to C-4 alkyl groups, and x, y, and z represent mol% based on the total number of repeating units in the polymer of structure (I); k, l, and m represent mol% based on the total number of repeating units in the polymer of structure (II), and further wherein x is in the range of 10 to 20 mol%, y is in the range of 50 to 60 mol%, z is in the range of 30 to 40 mol%, k is in the range of 10 to 20 mol%, l is in the range of 40 to 50 mol%, and m is in the range of 30 to 40 mol%, and further wherein for structure (I), the sum of x, y, and z is 100 mol%, and in structure (II), the sum of k, l, and m is 100 mol%; b) A diazonoquinone sulfonate (DNQ-PAC) component, which is a single material or mixture of materials having a general formula (III) or a general formula (III-1); wherein D1c, D2c, D3c, D4c and D5c are individually selected from H or a portion having a structure (IV) or (V), and further wherein in structure (III), at least one of D1c, D2c, D3c or D4c is a portion having a structure (IV) or (V) and in structure (III-1), at least one of D1c, D2c, D3c, D4c, D5c is a portion having a structure (IV) or (V); c) The component is a solubilizing agent containing a polyphenol compound, which is a single compound or a mixture of at least two compounds selected from the group consisting of oligomeric phenolic varnishes, compounds having general formula (VI) and compounds having general formula (VII), wherein Rde1, Rde2, Rde3, Rde4 and Rde5 are individually selected from C-1 to C-4 alkyl groups; d) surfactant; e) organic spin casting solvent; wherein the weight % solids of components a), b), c) and d) calculated from the total weight of components a), b), c) and d) to a total of 100 weight % solids range as follows: Component a) is a component in which the weight % solids of the phenolic varnish polymers of structures (I) and (II) are each independently in the range of 23 weight % to 70 weight %, and component b) is in the range of 9 weight % to 15 weight %. Component c) is in the range of 4% to 15% by weight, and component d) is in the range of 0% to 0.2% by weight; furthermore, this composition does not contain hexamethylmelamine crosslinking agent and photoacid generator, f) heterocyclic thiol component.

2. The composition of claim 1, wherein R1 to R9 are methyl.

3. The composition of claim 1, wherein in the polymer of structure (I), x is in the range of 15 to 20 mol%, y is in the range of 50 to 55 mol%, and z is in the range of 30 to 35 mol%.

4. The composition of claim 1, wherein in the polymer of structure (I), the repeating unit of structure (Ia) having a mole % x in the range of 10 to 20 mole % comprises a mixture of isomeric repeating units having structures (Iax1), (Iax2), (Iax3), (Iax4), (Iax5), and (Iax6), the isomeric repeating units having mole % values ​​of x1, x2, x3, x4, x5, and x6 respectively, based on the total amount of repeating units of structure (Ia), wherein: x1, the mole % value of the repeating unit of structure (Iax1) is in the range of 0 to 5 mole %; x2, the mole % value of the repeating unit of structure (Iax2) is in the range of 0 to 5 mole %; x3, the mole % value of the repeating unit of structure (Iax3) is in the range of 20 to 25 mole %; and x4, the mole % value of the repeating unit of structure (Iax4) is in the range of 20 to 25 mole %. x5, the mole percentage of the repeating unit of structure (Iax5) is in the range of 20 to 25 mole%, x6, the mole percentage of the repeating unit of structure (Iax6) is in the range of 20 to 25 mole%, and further wherein the sum of x1, x2, x3, x4, x5 and x6 based on the phenolic varnish polymer of structure (I) is 10 to 20 mole%, and the sum of x1, x2, x3, x4, x5, x6, y and z based on the phenolic varnish polymer of structure (I) is equal to 100 mole%; and wherein R1 and R2 have the same meaning as either claim 1 or 2.

5. The composition of claim 1, wherein in the polymer of structure (II), the repeating unit of structure (IIa) having a mole % k in the range of 10 mol% to 20 mol% comprises a mixture of isomeric repeating units having structures (IIax1), (IIax2), (IIax3), (IIax4), (IIax5), and (IIax6), the isomeric repeating units having mole % values ​​of k1, k2, k3, k4, k5, and k6 respectively, wherein the sum of these mole % values ​​is in the range of 10 mol% to 20 mol%, wherein: k1, the mole % value of the repeating unit of structure (IIak1) is in the range of 10 to 20 mol%, k2, the mole % value of the repeating unit of structure (IIak2) is in the range of 0 to 5 mol%, and k3, the mole % value of the repeating unit of structure (IIak3) is in the range of 0 to 5 mol%. k4, the mole percentage of the repeating unit of structure (IIak4) is in the range of 0 to 5 moles; k5, the mole percentage of the repeating unit of structure (IIak5) is in the range of 0 to 5 moles; k6, the mole percentage of the repeating unit of structure (IIak6) is in the range of 0 to 5 moles; and further, the sum of k1, k2, k3, k4, k5, k6, l, and m is equal to 100 moles; and R5, R6, and R7 have the same meaning as any one of claims 1 and 2.

6. The composition of claim 1, wherein the polymer of structure (II) has a more specific structure (II-1), wherein k1 is in the range of 10 to 20 mol%, l is in the range of 40 to 50 mol%, m is in the range of 30 to 40 mol%, and further wherein for structure (II-1), the sum of k1, l and m is 100 mol%; and wherein R5, R6, R7, R8 and R9 have the same meaning as any one of claims 1 and 2; 7. The composition of claim 1, wherein in the polymer of structure (II), k is in the range of 15 to 20 mol%, l is in the range of 40 to 50 mol%, and m is in the range of 35 to 40 mol%.

8. The composition of claim 1, wherein component b) the DNQ PAC is a component in which D1c, D2c, D3c and D4c are individually selected from H or a portion having structure (IV), and further wherein at least one of D1c, D2c, D3c or D4c is a portion having structure (IV).

9. The composition of any one of claims 1 to 8, wherein component c) the solubility enhancer is an oligomeric partially separated phenolic varnish.

10. The composition of any one of claims 1 to 8, wherein component c) the solubility enhancer is a compound of structure (VI), a compound of structure (VII), or a mixture thereof.

11. The composition of any one of claims 1 to 8, wherein component c) the solubility enhancer has structure (VI) and further wherein Rde1, Rde2 and Rde3 are all selected from the same C-1 to C-4 alkyl groups.

12. A composition of any one of claims 1 to 8, wherein component c) the solubility enhancer is selected from components having structure (VIa) or structure (VIIa) or a mixture of solubility enhancers having structures (VIa) and (VIIa); 13. A composition according to any one of claims 1 to 8, wherein component f) is at least one heterocyclic thiol compound comprising a ring structure selected from the general structures (H1), (H2) or (H3), or a tautomer thereof; and the ring structure is a monocyclic structure having 4 to 8 atoms or a polycyclic structure having 5 to 20 atoms; and wherein the monocyclic structure or the polycyclic structure comprises an aromatic, non-aromatic or heteroaromatic ring; in the structure (H1), Xt is selected from the group consisting of N(Rt3), C(Rt1)(Rt2), O, S, Se and Te; in the structure (H2), Y is selected from the group consisting of C(Rt3) and N; in the structure (H3), Z is selected from the group consisting of C(Rt3) and N. 3) and the group consisting of N; in these structures, Rt1, Rt2 and Rt3 are independently selected from the group consisting of: H, substituted alkyl groups having 1 to 8 carbon atoms, unsubstituted alkyl groups having 1 to 8 carbon atoms, substituted alkenyl groups having 2 to 8 carbon atoms, unsubstituted alkenyl groups having 2 to 8 carbon atoms, substituted alkynyl groups having 2 to 8 carbon atoms, unsubstituted alkynyl groups having 2 to 8 carbon atoms, substituted aromatic groups having 6 to 20 carbon atoms, substituted heteroaromatic groups having 3 to 20 carbon atoms, unsubstituted aromatic groups having 6 to 20 carbon atoms and unsubstituted heteroaromatic groups having 3 to 20 carbon atoms.

14. A method for imaging a photoresist, comprising the steps of: ia) coating a composition of any one of claims 1 to 13 onto a substrate to form a photoresist film; iia) selectively exposing the photoresist film to UV light using a mask to form a selectively exposed photoresist film; iva) developing the selectively exposed photoresist film to form a positively imaged photoresist film over the substrate.

15. Use of a composition as claimed in any one of claims 1 to 13 for coating a substrate or for preparing an imaging photoresist film on a substrate.

Images