Ground return for thin film formation using plasma

Abstract

A processing kit is provided, comprising: a base having a rectangular body including a periphery, the periphery including a first long side and a second long side opposite thereto, and a first short side and a second short side opposite thereto, wherein each of the short sides is adjacent to and extends between the first long side and the second long side at a respective corner; and a plurality of grounding devices coupled to the periphery of the rectangular body outside the respective corners of the rectangular body, wherein the plurality of grounding devices includes four or more side grounding devices and eight or more bottom grounding devices, the four or more side grounding devices being coupled to each of the first long side, the second long side, the first short side and the second short side, and the eight or more bottom grounding devices being coupled to each of the first long side, the second long side, the first short side and the second short side.

Description

Technical Field

[0001] The specific embodiments described herein generally relate to methods and apparatus for processing large-area substrates using plasma. More specifically, the specific embodiments described herein relate to a modulated radio frequency (RF) current return path for a plasma processing chamber. Prior Technology

[0002] Plasma-enhanced chemical vapor deposition (PECVD) is commonly used to deposit thin films on substrates such as semiconductor substrates, solar panel substrates, and liquid crystal display (LCD) and organic light-emitting diode (OLED) substrates for display manufacturing. PECVD is typically accomplished by introducing a precursor gas into a vacuum chamber having a substrate mounted on a base or substrate support. The precursor gas is typically guided through a gas distribution plate located near the top of the vacuum chamber. The precursor gas in the vacuum chamber is energized (e.g., excited) into plasma by applying radio frequency (RF) power to the chamber from one or more RF sources coupled to the chamber. The excited gas reacts to form a thin film of material on the surface of the substrate (or a device formed thereon). The gas distribution plate is typically connected to the RF power supply, while the base is typically connected to the chamber body to provide a return path for the RF current.

[0003] In OLED device manufacturing, PECVD processing is typically used to form thin films on multiple OLED devices formed on a substrate. These films are then used to encapsulate and / or seal the devices (referred to as thin-film encapsulation (TFE)). Uniformity is generally required in these films deposited on OLED devices using PECVD processing. Yield can decrease when the film is non-uniform across the entire substrate area. Non-uniformity has been found to be related to plasma density uniformity, which is affected by radio frequency return.

[0004] Therefore, an improved RF return scheme for large-area substrates is needed. Summary of the Invention

[0005] Specific embodiments of this disclosure generally relate to methods and apparatus for plasma processing substrates. More specifically, the specific embodiments described herein provide a plasma processing chamber having one or more radio frequency (RF) grounding or return means adapted to provide a favorable RF return path.

[0006] In one embodiment, a processing kit is provided. The processing kit includes a base having a rectangular body made of a conductive material. The rectangular body includes a perimeter, the perimeter including a first long side and an opposite second long side, and a first short side and an opposite second short side, wherein each of the short sides is adjacent to and extends between the first and second long sides, intersecting at a respective corner. The base also includes a plurality of grounding devices coupled to the perimeter of the rectangular body outside the respective corners of the rectangular body, wherein the plurality of grounding devices includes four or more side grounding devices and eight or more bottom grounding devices, the four or more side grounding devices being coupled to each of the first long side, the second long side, the first short side, and the second short side, and the eight or more bottom grounding devices being coupled to each of the first long side, the second long side, the first short side, and the second short side.

[0007] In another specific embodiment, a processing kit is provided. The processing kit includes a base having a rectangular body made of a conductive material. The rectangular body includes a perimeter, the perimeter including a first long side and an opposite second long side, and a first short side and an opposite second short side, wherein each of the short sides is adjacent to and extends between the first and second long sides, intersecting at a respective corner. The base also includes a plurality of grounding devices coupled to a bracket within an electrical ground length of each of the first and second long sides and each of the first and second short sides, wherein the plurality of grounding devices includes four or more side grounding devices and eight or more bottom grounding devices, the four or more side grounding devices being coupled to each of the first long side, the second long side, the first short side, and the second short side, and the eight or more bottom grounding devices being coupled to each of the first long side, the second long side, the first short side, and the second short side.

[0008] In another specific embodiment, a plasma processing system is provided. The plasma processing system includes: a chamber; a first electrode disposed within the chamber, the first electrode facilitating plasma generation within the chamber and movable relative to a second electrode within the chamber. The first electrode includes a rectangular body made of a conductive material, the rectangular body including a periphery, the periphery including a first long side and an opposite second long side, and a first short side and an opposite second short side, wherein each of the short sides is adjacent to and extends between the first and second long sides, intersecting at a corresponding corner. The first electrode also includes a plurality of grounding devices coupled to the periphery of the rectangular body outside the corresponding corners of the rectangular body, wherein the plurality of grounding devices includes four or more side grounding devices and eight or more bottom grounding devices, the four or more side grounding devices being coupled to each of the first long side, the second long side, the first short side, and the second short side, and the eight or more bottom grounding devices being coupled to each of the first long side, the second long side, the first short side, and the second short side. Simple Explanation of the Diagram

[0009] Several specific embodiments can be referenced to illustrate the above-briefly summarized disclosure in a more specific way, and to gain a more detailed understanding of the above-described features of the disclosure. The accompanying drawings illustrate some of these specific embodiments. However, it should be noted that the accompanying drawings are merely illustrative of typical specific embodiments of the disclosure and should therefore not be considered as limiting the scope of the disclosure, as the disclosure may allow for other equivalent specific embodiments.

[0010] Figure 1A is a schematic cross-sectional view of a specific embodiment of the plasma processing system.

[0011] Figure 1B is a schematic cross-sectional view of another specific embodiment of the plasma processing system shown in Figure 1A.

[0012] Figure 2 is a perspective view of a specific embodiment of the side grounding device.

[0013] Figure 3 is a perspective rear view of a portion of the bracket used to connect the grounding device.

[0014] Figure 4 is a schematic cross-sectional top view of the main body of the chamber, showing the top view of the base.

[0015] Figures 5A to 5C are schematic perspective views of various specific embodiments of the grounding device arranged on a bracket around the base.

[0016] To aid understanding, common elements in the drawings have been labeled using the same element symbols whenever possible. It is conceivable that elements and / or processing steps of one embodiment can be advantageously incorporated into other embodiments without further description. Implementation

[0017] Specific embodiments of this disclosure generally relate to methods and apparatus for processing substrates using plasma and / or cleaning components using plasma. A processing kit is disclosed, comprising a base having various grounding devices coupled thereto to enable radio frequency (RF) return paths. Specific embodiments described herein relate to methods for enhancing plasma formation and depositing material onto a substrate by providing an improved grounding or return path for current. In the following description, reference will be made to a plasma-enhanced chemical vapor deposition (PECVD) chamber; however, it should be understood that the specific embodiments described herein can also be implemented in other chambers, including physical vapor deposition (PVD) chambers, etching chambers, semiconductor processing chambers, solar cell processing chambers, and organic light-emitting display (OLED) processing chambers, etc. Suitable chambers that can be used are available from AKT America, Inc., a subsidiary of Applied Materials, Inc., Santa Clara, California, USA. It should be understood that the specific embodiments discussed herein can also be implemented in chambers available from other manufacturers.

[0018] This disclosure can be used to process substrates of any size or shape. However, this disclosure offers particular advantages for substrates with a planar surface area of ​​approximately 15,600 cm², and includes substrates with a planar surface area of ​​approximately 90,000 cm² (or greater). The increased surface area of ​​the substrate presents challenges for uniform processing due to the increased difficulty in providing suitable grounding paths. The specific embodiments described herein provide solutions to these challenges when processing larger substrate sizes.

[0019] Figure 1A is a schematic cross-sectional view of a specific embodiment of the plasma processing system 100. The plasma processing system 100 is configured to use plasma to process a large-area substrate 101 to form structures and devices on the large-area substrate 101 to manufacture liquid crystal displays (LCDs), flat panel displays, organic light-emitting diode (OLED) devices, or photovoltaic cells for solar cell arrays. The substrate 101 may be a metal sheet, plastic sheet, organic material sheet, silicon sheet, glass sheet, quartz sheet, or polymer sheet, as well as other suitable materials. The plasma processing system 100 may be configured to deposit a variety of materials on the large-area substrate 101, including but not limited to dielectric materials (e.g., SiO2, SiO2XNy, derivatives thereof, or combinations thereof), semiconductor materials (e.g., Si and its dopants), or barrier materials (e.g., SiNx, SiO2XNy, or derivatives thereof). Specific examples of dielectric and semiconductor materials formed or deposited by the plasma processing system 100 onto a large-area substrate may include epitaxial silicon, polycrystalline silicon, amorphous silicon, microcrystalline silicon, silicon-germanium, germanium, silicon dioxide, silicon oxynitride, silicon nitride, dopants thereof (e.g., B, P, or As), derivatives thereof, or combinations thereof. The plasma processing system 100 is also configured to receive gases such as argon, hydrogen, nitrogen, helium, or combinations thereof as a purging gas or carrier gas (e.g., Ar, H₂, N₂, He, derivatives thereof, or combinations thereof). One example of using the system 100 to deposit a silicon thin film on a large-area substrate 101 can be achieved by using silane as the processing gas in the hydrogen carrier gas.

[0020] As shown in Figure 1A, the plasma processing system 100 typically includes a chamber body 102, which includes a bottom 117a and sidewalls 117b that at least partially define a processing space 111. A base 104 is disposed in the processing space 111. The base 104 is adapted to support a substrate 101 on a top surface during processing. The base 104 is coupled to an actuator 138, which is adapted to move the base at least vertically to facilitate the transfer of the substrate 101 and / or adjust the distance D between the substrate 101 and the spray head assembly 103. One or more lifting pins 110a-110d may extend through the base 104. As shown in Figure 1B, the lifting pins 110a-110d are adapted to contact the bottom 117a of the chamber body 102 and support the substrate 101 when the base 104 is lowered by the actuator 138, in order to facilitate the transfer of the substrate 101. In the processing position shown in Figure 1A, the lifting pins 110a-110d are adapted to be flush with or slightly lower than the upper surface of the base 104 to allow the substrate 101 to be placed flat on the base 104.

[0021] The substrate 101 and / or base 104 may have a surface area greater than about 5 square meters, for example, about 5.5 square meters or more. In some specific embodiments, the substrate 101 and / or base 104 may include dimensions of about 2200 mm (on the secondary side) × about 2500 mm (on the primary side) or greater. The structure formed on the substrate 101 may be an OLED device, a thin-film transistor, or a pn junction to form a diode for a photovoltaic cell.

[0022] The spray head assembly 103 is configured to supply process gas from the process gas source 122 to the process space 111. The plasma treatment system 100 also includes an exhaust system 118 configured to apply negative pressure to the process space 111. The spray head assembly 103 is generally disposed opposite the base 104 in a substantially parallel relationship.

[0023] In one embodiment, the spray head assembly 103 includes a gas distribution plate 114 and a back plate 116. The back plate 116 can serve as a baffle to allow a gas volume 131 to be formed between the gas distribution plate 114 and the back plate 116. A gas source 122 is connected to the gas distribution plate 114 via a conduit 134. In one embodiment, a distal plasma source 107 is connected to the conduit 134 for supplying plasma of activating gas to the processing space 111 through the gas distribution plate 114. The plasma from the distal plasma source 107 may include activating gas for cleaning chamber components arranged in the processing space 111.

[0024] The gas distribution plate 114, back plate 116, and conduit 134 are typically formed of a conductive material and are electrically connected to each other. The chamber body 102 is also formed of a conductive material. The chamber body 102 is typically electrically insulated from the spray head assembly 103. In one specific embodiment, the spray head assembly 103 is mounted on the chamber body 102 through an insulator 135.

[0025] In one specific embodiment, the base 104 is also conductive, and the base 104 and the spray head assembly 103 are configured as opposing electrodes for generating a plasma 108a of process gas between them during processing and / or pre-processing or post-processing. Furthermore, the base 104 and the spray head assembly 103 can be used to support the plasma 108b of cleaning gas during cleaning processing (FIG. 1B).

[0026] Radio frequency (RF) power supply 105 is typically used to generate plasma 108a between the spray head assembly 103 and the base 104 before, during, and after treatment, and can also be used to sustain the energized material or the cleaning gas further supplied by the remote plasma source 107. In one embodiment, RF power supply 105 is coupled to spray head assembly 103 via a first connection 106a of impedance matching circuit 121. A second connection 106b of impedance matching circuit 121 is electrically connected to chamber body 102.

[0027] In one embodiment, the plasma treatment system 100 includes a plurality of first RF devices 109a and a plurality of second RF devices 109b. Each of the first RF devices 109a and the second RF devices 109b is coupled between a base 104 and a grounding component of the chamber body 102. In one embodiment, the plurality of RF devices 109a and 109b are configured to control the return path for returning RF current during treatment and / or chamber cleaning procedures.

[0028] Each first RF device 109a may be referred to as a side grounding device 112. Each side grounding device 112 is configured to selectively contact and / or provide a grounding path between the side of the base 104 and the chamber sidewall 117b. Additionally, each second RF device 109b may be referred to as a bottom grounding device 113. Each bottom grounding device 113 is configured to provide a return path between the base 104 and the chamber bottom 117a. In some specific embodiments, each of the side grounding devices 112 and the bottom grounding devices 113 is coupled to an extension 119 electrically coupled to the base 104. The extension 119 may be a separate component coupled to the periphery of the base 104, or a structure including the periphery of the base 104.

[0029] Each side grounding device 112 includes a movable conductive member 120 adapted to contact an electrically coupled protrusion 124 of the sidewall 117b. Each side grounding device 112 can be selectively activated to turn current on or off. In the off position (as shown in FIG. 1A), each side grounding device 112 serves to provide an RF conductive medium between components of the base 104 and the chamber body 102 for an RF return path. In the on position (as shown in FIG. 1B), each side grounding device 112 is not electrically coupled to the chamber components (i.e., the components of the chamber body 102 electrically connected to the RF power supply 105). In one configuration, the on / off characteristics of each side grounding device 112 can be controlled by the height of the base 104 relative to the spray head assembly 103 (i.e., the height relative to the protrusion 124).

[0030] The arrows in Figure 1A schematically illustrate a specific embodiment of the RF current path during substrate processing. The RF current typically travels from the first lead 123a of the RF power supply 105 to the first output 106a of the impedance matching circuit 121, then along the outer surface of the conduit 134 to the rear surface of the backplate 116, and then to the front surface of the gas distribution plate 114. From the front surface of the gas distribution plate 114, the RF current travels through plasma 108a to the top surface of the base 104 or substrate 101, and then through the side grounding device 112 and / or the bottom grounding device 113 to the inner surface 125 of the chamber body 102. From the inner surface 125, the RF current returns from the impedance matching circuit 121 to the second lead 123b of the RF power supply 105.

[0031] In one embodiment, the return path of the RF current during processing can depend on the spacing between the base 104 and the spray head assembly 103, which is described as distance D. The spacing is controlled by the height of the base 104. In one embodiment, distance D is between approximately 200 mils and approximately 2000 mils during processing. At this spacing (e.g., the height of the base 104), both the side grounding device 112 and the bottom grounding device 113 can remain electrically coupled to the RF power supply 105. In this embodiment, the RF return path adopted by the RF current can be based on the electrical characteristics and location of the side grounding device 112 and the bottom grounding device 113. The electrical characteristics include the resistance, impedance, and / or conductance of the side grounding device 112 and the bottom grounding device 113. For example, because the side grounding device 112 is closer and has a smaller impedance to the RF current returning to the second lead 123b of the RF power supply 105, the RF current mainly flows through the side grounding device 112, while little or no RF current flows through the bottom grounding device 113.

[0032] Figure 1B is a schematic cross-sectional view of the plasma processing system 100 shown in Figure 1A. In this figure, the plasma processing system 100 is shown without a substrate to depict the chamber cleaning procedure, and arrows are shown to schematically depict the flow of RF current. In this specific embodiment, energized cleaning gas flows from a distal plasma source 107 to the spray head assembly 103 and the processing space 111 to supply plasma 108b within the processing space 111. During chamber cleaning, the base 104 is removed from the spray head assembly 103, and RF power from the RF power supply 105 can be applied to the processing space 111 to maintain or further energize the cleaning gas from the distal plasma source 107. In one specific embodiment, the spacing or distance D of the base 104 relative to the spray head assembly 103 during chamber cleaning is greater than the spacing or distance D of the base 104 relative to the spray head assembly 103 during processing. In one specific embodiment, the distance D between the base 104 and the spray head assembly 103 during the cleaning process is between approximately 200 mils and approximately 5000 mils, or greater.

[0033] In one embodiment, the side grounding device 112 may be electrically or physically disconnected from the base 104, such that the return RF current flows only through the bottom grounding device 113. In one embodiment, the height of the base 104 creates a condition that substantially prevents RF current from passing through the side grounding device 112. In one embodiment, when the base 104 is in this lower position, the side grounding device 112 is separated from the sidewall 117b and the base 104, thereby creating an RF open circuit state in the side grounding device 112.

[0034] Figure 2 is a perspective view of a specific embodiment of a side grounding device 112 coupled to the periphery 200 of a base 104. The side grounding device 112 is shown coupled to a bracket 205 (e.g., the extension 119 shown in Figures 1A and 1B). The base 104 includes a body 210 made of a conductive material such as aluminum. The bracket 205 includes a conductive material, such as aluminum, electrically connected to the body 210. In one specific embodiment, the bracket 205 is configured to be connected to a rod of the base 104. The bracket 205 includes an extended base member 215 projecting from the periphery 200 of the base 104 at selected locations. The extended base member 215 accommodates and / or supports the side grounding device 112 at these selected locations.

[0035] The side grounding device 112 includes a movable conductive member 120 as described in Figures 1A and 1B. An extended base member 215 includes an opening 220 adapted to receive a first shaft 222. The first shaft 222 is movably disposed through the opening 220 to provide relative movement between the base member 215 and the first shaft 222. The first shaft 222 is coupled to a second shaft 224, which is received within a spring profile 226. A collar 228 is coupled to the second shaft 224 to provide a base for the spring profile 226. In one embodiment, the first shaft 222 can be moved to any position within a travel distance indicated by 230 in Figure 2. The travel distance 230 corresponds to a range of distances during which the base 104 can travel while maintaining electrical contact or ground potential between the base 104 and the chamber body 102.

[0036] The movable conductive component 120 includes at least one elastic portion, shown in this specific embodiment as spring profile 226 and spring profiles 232A and 232B. Spring profiles 226, 232A, and 232B provide elasticity to the movable conductive component 120. Spring profiles 232A and 232B also provide a conductive path for current.

[0037] In some embodiments, the spring profile may be a leaf spring, a coil spring, a compression spring, or other flexible spring device or spring form. In one embodiment, spring profiles 232A and 232B comprise a metallic material or metal alloy, which may be additionally coated, wrapped, or clad with a conductive material. Examples of metals and metal alloys include nickel, stainless steel, titanium, MONEL® material, HASTELLOY® material, HAYNES® alloys, such as HAYNES® 242® material, beryllium copper, or other conductive elastic materials. Examples of conductive materials used for coating, wrapping, or cladding include aluminum, anodized aluminum, or other coatings, films, or sheets. In one embodiment, each of spring profiles 232A and 232B comprises a sheet of nickel or titanium alloy wrapped or covered with aluminum material. In another embodiment, spring template 226 comprises a Ni-Mo-Cr alloy, such as HASTELLOY® material or HAYNES® 242® material. The Ni-Mo-Cr alloy material may be coated, wrapped, or clad with an aluminum or conductive metal sheath or coating. In one specific embodiment, spring profile 226 comprises MONEL® 400 material, while spring profiles 232A and 232B comprise HAYNES® 242® material wrapped in aluminum foil.

[0038] In one embodiment, spring profiles 232A and 232B may be a continuous monolithic material or a single leaf spring with two ends 234A, 234B. Alternatively, spring profiles 232A and 232B may be two separate, discontinuous sheets of material, or two leaf springs coupled at the respective ends of contact pad 236. In any embodiment, spring profiles 232A and 232B are electrically coupled to contact pad 236, which is made of conductive material. When the side grounding device 112 is in the closed position (as shown in FIG. 1A), RF current is conducted from the body 210 through the bracket 205, on or through spring profiles 232A and / or 232B, and then to contact pad 236 that contacts the protrusion 124.

[0039] The collar 228 may include a nut or a threaded portion for securing a screw adapted to be attached to the second shaft 224 to capture the spring profile 226. The second shaft 224 may have a reduced dimension, such as diameter, to allow the spring profile 226 to be fitted thereon. In this specific embodiment, the second shaft 224, the spring profile 226, and the collar 228 are disposed or housed within a tubular component 238. Because the spring profile 226, the second shaft 224, and the collar 228 are made of a conductive material, the tubular component 238, made of a dielectric material, electrically insulates the conductive components therein. In this way, an electric arc or arc potential is reduced.

[0040] Figure 3 is a perspective rear view of a portion of the bracket 205. The bracket 205 shown is viewed from the side of the periphery 200 coupled to the base 104 (all shown in Figure 2). A plurality of extending base members 215 are shown at periodic intervals along the length of the bracket 205. Two or more side grounding devices 112 are shown coupled to the bracket 205, with empty base members 300 between them. A plurality of bottom grounding devices 113 (i.e., second RF devices 109b) directly coupled to the bracket 205 are also shown.

[0041] Each bottom grounding device 113 may be a spring-shaped profile, strip, wire, or cable adapted to provide an RF conductive medium between the base 104 and the grounding components of the chamber body 102 (both shown in Figures 1A and 1B). In one specific embodiment, the bottom grounding device 113 is configured as a strip made of or coated with a flexible conductive material. The material of the bottom grounding device 113 may be aluminum, or include one or more of the same material combinations described in conjunction with the spring-shaped profile of the side grounding device 112.

[0042] Each of the bottom grounding devices 113 can be directly coupled to the bottom surface 305 of the extended base member 215 and / or the bracket 205. In one embodiment, at least a portion of the bottom grounding device 113 is coupled to a recessed region 312 of the bracket 205 between adjacent extended base members 215. While the movable conductive member 120 may alternate between adjacent extended base members 215, the bottom grounding devices 113 are continuously coupled to the bracket 205 at selected spacing. In one example, the side grounding device 112 includes a spacing 310 of approximately 21 inches to approximately 25 inches, such as approximately 22 inches to approximately 24 inches, such as 23.5 inches. In contrast, the bottom grounding device 113 includes a spacing 315 of approximately 9 inches to approximately 12 inches, such as approximately 10 inches to approximately 11 inches. In this context, the term "approximately" means + / - 0.1 inches.

[0043] Each bottom grounding device 113 includes a first end 320 and a second end 325. The first end 320 is connected to the bracket 205 using one or more fasteners (e.g., screws or bolts) to secure the first end 320 to the bracket 205. The second end 325 includes a fastener interface 330 to facilitate connection of the second end 325 to a surface of the chamber bottom 117a (as shown in Figures 1A and 1B). The fastener interface 330 may be a slot or elongated hole adapted to receive a fastener (e.g., bolt or screw) to secure the second end 325 to the chamber body.

[0044] Figure 4 is a schematic cross-sectional top view of the chamber body 102, showing a top view of the base 104 (on which the substrate 101 is mounted). Figure 4 also shows a cross-sectional view of the chamber body 102 (along the plane of the substrate 101) to show a specific embodiment of the positioning of the side grounding device 112.

[0045] The chamber body 102 is shown with a base 104 disposed therein, and a side grounding device 112 disposed in the space between the inner surface 400 of the chamber body 102 and the support 205. The contact pads 236 of the side grounding device 112 are adapted to contact protrusions 124 (four shown in dashed lines), which are electrically coupled to the inner surface 400 of the chamber body 102 to provide an RF return path for applied RF power. Although not shown, a bottom grounding device 113 is also coupled to the base 104.

[0046] In one embodiment, the spacing and concentration of the side grounding devices 112 and / or the bottom grounding devices 113 are configured to provide symmetry in the RF return path to promote plasma uniformity and enhance deposition uniformity on the substrate 101. In another embodiment, the spacing and concentration of the side grounding devices 112 and / or the bottom grounding devices 113 are adapted to provide a symmetrical appearance for the applied RF power to accommodate variations in the chamber structure, such as the presence of a slit valve opening 405 on one side of the chamber body 102. When the chamber may not be physically and / or electrically symmetrical, the spacing or concentration of the side grounding devices 112 and / or the bottom grounding devices 113 allows the applied RF power to travel symmetrically within the processing space.

[0047] As shown in Figure 4, the base 104 includes a periphery 200, which includes two long sides 410 and two short sides 415. The long sides 410 are opposite each other and adjacent to the short sides 415, and the short sides 415 are also opposite each other. The base 104 includes an electrically grounded portion or length 420 on each of the long sides 410 and short sides 415. The electrically grounded length 420 is less than the length of the corresponding long side 410 and short side 415 of the base 104. Each of the side grounding device 112 and / or the bottom grounding device 113 is located within the electrically grounded length 420. The periphery 200 also includes a corner 425, at which each long side 410 and short side 415 intersects. In some embodiments, the side grounding device 112 and / or the bottom grounding device 113 are not located on the corner 425.

[0048] The positioning of the side grounding device 112 and bottom grounding device 113, as described herein, has been extensively tested to determine the RF grounding efficiency of plasma systems, such as the plasma processing system 100 discussed above. Factors of concern include the arc potential between the base 104 and the grounding portion of the system, where an arc could potentially damage the system and / or the substrate, as well as devices formed on the substrate. Therefore, arbitrarily removing grounding devices from plasma system components and / or repositioning grounding devices on plasma system components is not obvious, as arcing would damage these components. Specifically, removing grounding devices from the corners of the base 104 is not obvious, as these areas are prone to arcing.

[0049] Figures 5A to 5C are schematic isometric views (not shown) of various specific embodiments of the grounding devices arranged on the bracket 205 on the periphery 200 of the base 104. In each of the specific embodiments shown, the side grounding device 112 and the bottom grounding device 113 are not located at the corner 425.

[0050] In Figure 5A, there are eight side grounding devices 112 on the long side 410 of the base 104 and six side grounding devices 112 on the short side 415 of the base 104. However, there are eight bottom grounding devices 113 on both the long side 410 and the short side 415 of the base 104. In the specific embodiment of Figure 5A, there are two empty base parts 300 near the corner 425.

[0051] In Figure 5B, there are four side grounding devices 112 on the long side 410 and four side grounding devices 112 on the short side 415 of the base 104. However, there are eight bottom grounding devices 113 on both the long side 410 and the short side 415 of the base 104. In the specific embodiment of Figure 5B, there are two empty base members 300 on the long side 410 near the corner 425, while the short side 415 includes one empty base member 300 near the corner 425.

[0052] In Figure 5C, there are six side grounding devices 112 on the long side 410 and six side grounding devices 112 on the short side 415 of the base 104. However, similar to other embodiments, there are eight bottom grounding devices 113 on both the long side 410 and the short side 415 of the base 104. In the embodiment of Figure 5C, there are two empty base members 300 on the long side 410 near the corner 425, while the short side 415 includes one empty base member 300 near the corner 425.

[0053] The positions and / or spacing between the grounding devices shown in Figures 5A to 5C are not exclusive. However, a specific embodiment of the base 104, as disclosed herein, with grounding devices coupled thereto, provides a more uniform RF distribution on the substrate. Testing of the specific embodiment of the base 104 described herein shows increased film uniformity across the substrate. Specifically, uniformity at the substrate corners is significantly improved compared to conventional base grounding schemes. The specific embodiment of the base 104 described herein also improves the delta stress of the film formed on the substrate. For example, using the specific embodiment of the base 104 described herein, the delta stress is reduced from 136 megapascals (MPa) to approximately 5 MPa (after 250 hours of aging). The specific embodiment of the base 104 described herein also improves the moisture-proof performance of the film. The stress stability of the film in high temperature and high humidity environments (e.g., approximately 85 degrees Celsius at 85% relative humidity) is a key factor limiting the moisture-proof performance of films formed on the substrate. Using a specific embodiment of the base 104 as described herein, testing in this high-temperature / high-humidity environment showed that the delta stress (after 1000 hours of aging) decreased from 144 MPa to approximately 13 MPa. Therefore, using the base 104 as described herein, the film quality at the substrate corners is sufficient to protect the film from oxidation after aging in a high-temperature and high-humidity environment for 1000 hours.

[0054] While the foregoing content pertains to specific embodiments of the present disclosure, other and further specific embodiments may be conceived without departing from the basic scope of the foregoing content, and the scope of the foregoing content is determined by the following claims.

[0055] 100: Plasma Treatment System 101: Large-area substrate 102: Main body of the chamber 103: Sprayer head assembly 104: Base 105: Radio Frequency (RF) Power Source 106a: First Link 106b: Second link 107: Remote Plasma Source 108a: Plasma 108b: Plasma 109a: First RF device 109b: Second RF device 110a-110d: Pin 111: Processing Space 112: Side grounding device 113: Bottom grounding device 114: Gas distribution plate 116: Backplate 117a: Bottom of chamber 117b: Chamber sidewall 118: Exhaust System 119: Components 120: Movable conductive component 121: Impedance Matching Circuit 122: Processing gas sources 123a: First lead 123b: Second lead 124: Highlighted parts 125: Inner surface 131: Gas volume 134: Catheter 135: Insulator 138: Actuator 200: Surrounding Area 205: Bracket 210: Main Body 215: Extension base component 220: Opening 222: First Axis 224: Second Axis 226: Spring Shape 228: Ring 230: Distance traveled 234A: End 234B: End 236: Contact pad 238: Tubular components 300: Empty base component 305: Bottom surface 310: Spacing 312: Depressed area 315: Spacing 320: First end 325: Second end 330: Fastener Interface 400: Internal surface 405: Slit valve opening 410: Long side 415: Short side 420: Electrical grounding length 425: Corner

[0056] Domestic storage information (please note in order of storage institution, date, and number) none Overseas storage information (please note in the order of storage country, institution, date, and number) none

Claims

1. A processing suite comprising: A base having a rectangular body made of a conductive material, the rectangular body including a perimeter including a first long side and a second long side opposite thereto, and a first short side and a second short side opposite thereto, wherein each of the short sides is adjacent to and extends between the first long side and the second long side at a corresponding corner; and a plurality of grounding devices coupled to the perimeter of the rectangular body outside the corresponding corners of the rectangular body, wherein the plurality of grounding devices includes four or more side grounding devices and eight or more bottom grounding devices, the four or more side grounding devices being coupled to each of the first long side, the second long side, the first short side and the second short side, and the eight or more bottom grounding devices being coupled to each of the first long side, the second long side, the first short side and the second short side.

2. The processing kit as claimed in claim 1, wherein each of the plurality of grounding devices is coupled to a bracket arranged around the periphery of the rectangular body.

3. The processing kit as claimed in claim 2, wherein the support includes a plurality of base components, each base component being adapted to support one of the side grounding devices.

4. The processing kit as claimed in claim 3, wherein each of the long sides and each of the short sides includes at least one empty base component.

5. The processing kit as described in claim 4, wherein each of the equal long sides comprises four empty base components.

6. The processing kit as described in claim 4, wherein each of the short sides comprises two empty base components.

7. The processing kit as claimed in claim 1, wherein the bottom grounding devices are coupled to a bracket disposed around the periphery of the rectangular body.

8. The processing kit as claimed in claim 7, wherein the support includes a plurality of base components, and at least a portion of each of the plurality of base components includes one of the side grounding devices.

9. The processing kit as claimed in claim 8, wherein a portion of the bottom grounding devices is coupled to the bracket adjacent to one of the base components, the one base component including the one of the side grounding devices.

10. The processing kit as claimed in claim 8, wherein the support includes a recessed region located between the base components, and the bottom grounding device is coupled to the recessed region.

11. A processing suite comprising: A base having a rectangular body made of a conductive material, the rectangular body including a perimeter including a first long side and a second long side opposite thereto, and a first short side and a second short side opposite thereto, wherein each of the short sides is adjacent to and extends between the first long side and the second long side at a corresponding corner; a bracket coupled to the perimeter of the rectangular body; and a plurality of grounding devices coupled to the bracket within an electrical grounding length of each of the first and second long sides and each of the first and second short sides, wherein the plurality of grounding devices includes four or more side grounding devices and eight or more bottom grounding devices, the four or more side grounding devices being coupled to each of the first long side, the second long side, the first short side and the second short side, and the eight or more bottom grounding devices being coupled to each of the first long side, the second long side, the first short side and the second short side.

12. The processing kit as claimed in claim 11, wherein the support includes a plurality of base components, each base component being adapted to support one of the side grounding devices.

13. The processing suite as claimed in claim 12, wherein each of the long sides and each of the short sides includes at least one empty base component.

14. The processing kit as described in claim 13, wherein each of the equal long sides comprises four empty base components.

15. The processing kit as claimed in claim 13, wherein each of the short sides comprises two empty base components.

16. The processing kit as claimed in claim 11, wherein each of the bottom grounding devices includes a first end and a second end, the first end being coupled to the bracket, and the second end having a slot.

17. A plasma treatment system, the system comprising: One chamber; A first electrode disposed within the cavity, the first electrode facilitating the generation of a plasma within the cavity and movable within the cavity relative to a second electrode, wherein the first electrode comprises: a rectangular body made of a conductive material, the rectangular body including a periphery including a first long side and an opposing second long side, and a first short side and an opposing second short side, wherein each of the short sides is adjacent to and extends between the first long side and the second long side at a corresponding corner; and a plurality of grounding devices coupled to the periphery of the rectangular body outside the corresponding corners of the rectangular body, wherein the plurality of grounding devices includes four or more side grounding devices and eight or more bottom grounding devices, the four or more side grounding devices being coupled to each of the first long side, the second long side, the first short side and the second short side, and the eight or more bottom grounding devices being coupled to each of the first long side, the second long side, the first short side and the second short side.

18. The plasma processing system as claimed in claim 17, wherein each of the plurality of grounding devices is coupled to a bracket arranged around the periphery of the rectangular body.

19. The plasma processing system as claimed in claim 18, wherein the support includes a plurality of base components, each base component being adapted to support one of the side grounding devices.

20. The plasma processing system of claim 19, wherein each of the long sides and each of the short sides includes at least one empty base member adjacent to the corner.

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