Plasma treatment method and plasma treatment device
The plasma processing method enhances chamber cleaning by using a higher bias frequency pulse waveform during the cleaning phase, effectively removing adhering substances and improving the apparatus's performance.
TWI931641BActive Publication Date: 2026-07-11TOKYO ELECTRON LTD
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Patent Information
- Application Number
- TW112102187
- Authority / Receiving Office
- TW · TW
- Patent Type
- Patents
- Current Assignee / Owner
- Priority Date
- 2022-01-31
- Filing Date
- 2023-01-18
- Publication Date
- 2026-07-11
- Estimated Expiration
- 2043-01-17
AI Technical Summary
Technical Problem
Existing plasma processing apparatuses face challenges in effectively cleaning and removing substances adhering to the chamber surfaces during etching processes.
Method used
A plasma processing method that includes etching a substrate film using a self-etching gas and cleaning the chamber using a self-cleaning gas, with a bias voltage applied to the substrate support portion, where the bias frequency in cleaning is higher than in etching, and the bias voltage has a specific pulse waveform.
Benefits of technology
Improves the cleaning and removal performance of substances adhering to the chamber surfaces, enhancing the efficiency of the plasma processing apparatus.
✦ Generated by Eureka AI based on patent content.
Abstract
The plasma processing method disclosed in this invention includes step (a), which involves placing a substrate on a substrate support surface of a substrate support portion disposed within a chamber of a plasma processing apparatus. The plasma processing method further includes step (b), which involves etching a film on the substrate using plasma. The plasma processing method further includes step (c), which involves cleaning the chamber using plasma. In steps (b) and (c), a bias voltage comprising a DC voltage pulse and having a pulse waveform is periodically applied to a bias electrode of the substrate support portion. The bias voltage has a bias frequency that is the reciprocal of the duration of the pulse waveform period. The bias frequency in step (c) is higher than the bias frequency in step (b).
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