Manipulator

Abstract

A multi-beam manipulator device operates on a sub-beam of a multi-beam system to deflect the sub-beam path. The device includes an electrode as one of a pair of parallel surfaces. Each pair of parallel surfaces includes a first surface disposed along one side of a corresponding line of one of the sub-beams, and a second surface disposed parallel to the first surface and along one opposite side of the corresponding line of the sub-beam path. A first pair of parallel surfaces is configured to interact statically with the entire linearity of one of the sub-beams in the multi-beam system, such that it can apply a deflection amount to the path of the sub-beam in a first direction. A second pair of parallel surfaces is configured to interact statically with the entire linearity of one of the sub-beams in the multi-beam system, such that it can apply another deflection amount to the path of the sub-beam in a second direction.

Description

Technical Field

[0001] The embodiments provided herein generally relate to the manipulation of charged particles in a multi-beam charged particle device. The embodiments provide a plurality of electrode pairs, each configured to simultaneously manipulate a plurality of charged particle sub-beams. Prior Technology

[0002] When manufacturing semiconductor integrated circuit (IC) wafers, unwanted pattern defects caused by factors such as optical effects and stray particles inevitably appear on the substrate (i.e., wafer) or mask during the manufacturing process, thereby reducing yield. Monitoring the extent of unwanted pattern defects is therefore a crucial process in IC wafer manufacturing. More generally, the inspection and / or measurement of the surface of substrates or other objects / materials are incorporation processes during and / or after their manufacturing.

[0003] Pattern detection tools using charged particle beams have been used to inspect objects, such as to detect pattern defects. These tools typically employ electron microscopy techniques, such as scanning electron microscopy (SEM). In SEM, a primary electron beam, directed at relatively high energies using a final deceleration step, lands on the sample with a relatively low landing energy. The electron beam is focused as a probe spot on the sample. The interaction between the material structure at the probe spot and the landing electrons from the electron beam causes electrons to be emitted from the surface, such as secondary electrons, backscattered electrons, or Auger electrons. Secondary electrons can be emitted from the material structure of the sample. By scanning the sample surface with the primary electron beam as a probe spot, secondary electrons can be emitted across the sample surface. By collecting these emitted secondary electrons from the sample surface, the pattern detection tool can obtain an image representing the characteristics of the material structure of the sample surface.

[0004] Another application of charged particle beams is lithography. The charged particle beam reacts with a resist layer on the surface of a substrate. The desired pattern within the resist can be created by controlling the position of the charged particle beam on the resist layer through which it is guided.

[0005] Charged particle devices can be used to generate, illuminate, project, and / or detect one or more beams of charged particles. Within charged particle devices, there is typically a need to modify known techniques for manipulating one or more beams of charged particles. Summary of the Invention

[0006] The embodiments provided herein disclose a manipulator device for manipulating one or more charged particle beams. The manipulator device may be a deflector for simultaneously deflecting a plurality of sub-beams in a multi-beam configuration. The manipulator device may be included in a charged particle device. The charged particle device may be a device for generating, illuminating, projecting, and / or detecting one or more charged particle beams.

[0007] According to a first aspect of the present invention, a multi-beam manipulator device is provided, configured to operate along the paths of a plurality of sub-beams in a charged particle multi-beam to deflect the paths of the plurality of sub-beams, wherein the sub-beams are arranged in an array, wherein the sub-beams are arranged in a plurality of lines, the multi-beam manipulator device comprising: an electrode assembly including a plurality of pairs of parallel planar electrode surfaces; wherein: a first pair of parallel planar electrode surfaces in the assembly includes a first planar electrode surface arranged along one side of one of the lines of the sub-beams, and a second planar electrode surface arranged parallel to the first planar electrode surface and along one opposite side of the lines of the sub-beam paths; a second pair of parallel planar electrode surfaces in the assembly The electrode surface includes a first planar electrode surface disposed along one side of a different one of the lines of the sub-beam path, and a second planar electrode surface disposed parallel to the first planar electrode surface and along the opposite side of the different one of the lines of the sub-beam path; the first pair of parallel planar electrode surfaces are configured to interact statically with the entire linearity of one of the sub-beams in the multi-beam array, such that they can apply a first deflection amount to the paths of the sub-beams in a first direction; the second pair of parallel planar electrode surfaces are configured to interact statically with the entire linearity of one of the sub-beams in the multi-beam array, such that they can apply a second deflection amount to the paths of the sub-beams in a second direction; and the first direction is opposite to the second direction.

[0008] According to a second aspect of the present invention, a multi-beam manipulator configuration is provided, comprising: a first multi-beam manipulator device according to the first aspect; and one or more other multi-beam manipulator devices, wherein each of the one or more other multi-beam manipulator devices is a multi-beam manipulator device according to the first aspect; wherein each multi-beam manipulator device is disposed at a different position along the charged particle optical axis of the multi-beam manipulator configuration.

[0009] According to a third embodiment of the present invention, a charged particle system is provided, comprising: a charged particle source configured to emit a beam; a multi-beam generator configured to generate a multi-beam depending on the beam, wherein the multi-beam includes a plurality of sub-beams; and a multi-beam manipulator device according to a first embodiment or a second embodiment configured to manipulate the paths of the sub-beams in the multi-beam generated by the multi-beam generator.

[0010] According to a fourth state sample of the present invention, an electron beam detection tool comprising a charged particle system according to a third state sample is provided.

[0011] According to a fifth state of the present invention, an electron beam lithography tool comprising a charged particle system according to a third state is provided.

[0012] According to a sixth aspect of the present invention, a multi-beam manipulator device is provided, configured to operate on a plurality of sub-beam paths in a charged particle multi-beam to deflect the plurality of sub-beam paths, wherein the sub-beams are arranged in an array, wherein the sub-beams are arranged in a series of lines, the multi-beam manipulator device comprising: a plurality of pairs of parallel planar electrode surfaces; wherein: a first pair of parallel planar electrode surfaces comprises two opposing planar parallel electrode surfaces arranged along at least one side of the lines of the sub-beams; a second pair of parallel planar electrode surfaces comprises two opposing planar parallel electrode surfaces arranged along at least another side of the lines of the sub-beams; the first pair of parallel planar electrode surfaces and the second pair of parallel planar electrode surfaces extend across the multi-beam to cross the array and are configured to electrostatically interact with the respective sub-beam paths in the lines between the pairs of surfaces during operation.

[0013] According to a seventh embodiment of the present invention, a multi-beam manipulator is provided, configured to manipulate an array of sub-beam paths of a charged particle multi-beam, the sub-beams being arranged along lines in the array, the lines being in at least two different linear directions. The multi-beam manipulator device includes: a plurality of deflector devices corresponding to the plurality of linear directions in the array and arranged at different positions along the paths of the multi-beams, wherein each deflector device includes a plurality of pairs of parallel planar electrode surfaces, the parallel planar electrode surfaces of each deflector device being aligned with a different linear direction, the plurality of pairs of parallel planar electrode surfaces including: a first pair of parallel planar electrode surfaces. A first pair of parallel planar electrode surfaces includes two opposing planar parallel electrode surfaces arranged along either side of at least one of the lines of the sub-beams; a second pair of parallel planar electrode surfaces includes two opposing planar parallel electrode surfaces arranged along either side of at least another of the lines of the sub-beams, the other of the lines of the sub-beams being parallel to the at least one of the lines of the sub-beams; and the first pair of parallel planar electrode surfaces and the second pair of parallel planar electrode surfaces extend across the multi-beam extension to traverse the array and are configured to electrostatically interact with the respective sub-beam paths in the lines between the paired surfaces during operation.

[0014] According to an eighth embodiment of the present invention, a multi-beam manipulator is provided, configured to manipulate an array of sub-beam paths of a charged particle multi-beam, the sub-beams being arranged along lines in the array in at least two different linear directions. The multi-beam manipulator device includes a plurality of deflector devices corresponding to the plurality of linear directions in the array and positioned along the multi-beam paths, wherein each deflector device includes a plurality of planar parallel-opposite electrode surfaces, the planar parallel electrode surfaces of each deflector device being aligned with a different linear direction, the plurality of pairs of parallel planar electrode surfaces including at least two pairs of opposing parallel planar electrode surfaces, wherein the parallel surfaces of each pair of opposing planes are configured to span the multi-beam array on either side of at least one different line of the sub-beam paths, such that in operation, all the sub-beam paths in the respective at least one line between each pair of opposing parallel planar electrode surfaces and the surfaces interact electrostatically.

[0015] According to a ninth aspect of the present invention, a method is provided for deflecting the paths of a plurality of sub-beams in a charged particle multi-beam, wherein the sub-beams are arranged in an array, wherein the sub-beams are arranged in a plurality of lines, the method comprising: statically interacting with a first entire line of one of the sub-beams in the multi-beam to apply a first deflection amount to the paths of the sub-beams in a first direction; and statically interacting with a second entire line of one of the sub-beams in the multi-beam to apply a second deflection amount to the paths of the sub-beams in a second direction, wherein the first direction is opposite to the second direction.

[0016] Other advantages of the invention will become apparent from the following description taken in conjunction with the accompanying drawings, in which certain embodiments of the invention are illustrated by way of description and examples. Simple Explanation of the Diagram

[0017] The above and other aspects of the present invention will become more apparent from the description of the exemplary embodiments obtained in conjunction with the accompanying drawings.

[0018] [picture] [1] A schematic diagram illustrating an exemplary charged particle beam detection device.

[0019] [picture] [2] To explain as [picture] [1] is a schematic diagram of an exemplary multi-beam device, which is part of an exemplary charged particle beam detection device.

[0020] [picture] [3] For explanation [picture] [1] is an example of a multi-beam device, which is an example of a source conversion unit configuration of an example charged particle beam detection device.

[0021] [picture] [4] is a schematic diagram of a manipulator device according to one embodiment.

[0022] [picture] [5] is a schematic diagram of a manipulator device according to one embodiment.

[0023] [picture] [6] Demonstrates the configuration of two manipulator devices according to one embodiment.

[0024] [picture] [7A] is a schematic diagram of the sub-beam configuration.

[0025] [picture] [7B] Demonstrates how a plurality of manipulator devices can be aligned according to one embodiment.

[0026] [picture] [8] Shows a manipulator array containing a plurality of manipulators for manipulating sub-beams.

[0027] [picture] [9] A schematic diagram showing a cross-section of a portion of the device passing through a charged particle. Implementation

[0028] Examples of these exemplary embodiments will now be described in detail with reference to the accompanying drawings. The following description refers to the accompanying drawings, wherein, unless otherwise indicated, the same numbers in different figures denote the same or similar elements. The embodiments set forth in the following description of the exemplary embodiments do not represent all embodiments of the invention. Instead, they are merely examples of apparatuses and methods conforming to the nature of the invention as described in the appended claims.

[0029] Enhanced computing power in electronic devices can be achieved by significantly increasing the packing density of circuit components (such as transistors, capacitors, diodes, etc.) on IC chips, thereby reducing the physical size of the device. This has been achieved through increased resolution, enabling the fabrication of smaller structures. For example, an IC chip in a smartphone (about the size of a thumbnail and available in 2019 or earlier) could include more than 2 billion transistors, each smaller than 1 / 1000th the size of a human hair. Therefore, it is not surprising that semiconductor IC manufacturing involves a complex and time-consuming process with hundreds of individual steps. Even an error in one step can significantly affect the functionality of the final product. Even a "fatal defect" can cause device failure. The goal of the manufacturing process is to improve the overall yield of the process. For example, to achieve a 75% yield for a 50-step process (where steps can indicate the number of layers formed on the wafer), each individual step must have a yield greater than 99.4%. If individual steps have a yield of 95%, the overall process yield will be as low as 7%.

[0030] While high process yields are desirable in IC chip manufacturing facilities, maintaining high substrate (i.e., wafer) throughput (defined as the number of substrates processed per hour) is also essential. Both high process yields and high substrate throughput can be affected by the presence of defects, especially if operator intervention is required to inspect for defects. Therefore, high-yield detection and identification of micron and nanometer-scale defects using inspection tools such as scanning electron microscopy (SEM) are crucial for maintaining both high yields and low costs.

[0031] SEM comprises scanning and detection equipment. The scanning equipment includes: an illumination device containing an electron source for generating primary electrons; and a projection device for scanning a sample, such as a substrate, using one or more focused primary electron beams. The primary electrons interact with the sample, generating secondary electrons. The detection equipment captures these secondary electrons from the sample during scanning, allowing the SEM to produce an image of the scanned area of ​​the sample. For high-yield inspection, some inspection equipment uses multiple focused primary electron beams, i.e., multi-beam inspection. The constituent beams of a multi-beam inspection system can be called sub-beams or fine beams. Multi-beam inspection systems can scan different portions of the sample simultaneously. Therefore, multi-beam inspection equipment can inspect samples at much higher speeds than single-beam inspection equipment.

[0032] In multi-beam inspection equipment, some of the primary electron beams are displaced far from the central axis of the scanning device, i.e., the midpoint of the main electro-optical axis. To ensure that all electron beams arrive at the sample surface at substantially the same incident angle and / or at the desired pitch and / or at the desired position on the sample surface, it is necessary to manipulate sub-beam paths that are radially further from the central axis to move them at a greater angle compared to sub-beam paths that are closer to the central axis. This stronger manipulation can lead to aberrations that produce blurred and out-of-focus images of the sample substrate. Specifically, for sub-beam paths that are not on the central axis, aberrations in the sub-beams can increase with radial displacement from the central axis because manipulators for these sub-beam paths are required to operate at higher voltages. When such aberrations are detected, they remain associated with the secondary electrons. These aberrations therefore degrade the quality of the images generated during inspection.

[0033] The following describes the implementation of a known multi-beam detection device.

[0034] The figures are schematic. Therefore, for clarity, the relative dimensions of the components in the figures are exaggerated. In the following description of the figures, the same or similar reference numerals refer to the same or similar components or entities, and only the differences with respect to individual embodiments are described. Although this specification and figures are directed to electro-optical devices, it should be understood that the embodiments are not intended to limit the invention to specific charged particles. Therefore, more generally, references to electrons throughout the present invention can be considered as references to charged particles, where charged particles are not necessarily electrons.

[0035] Now see [picture] [1] This is a schematic diagram illustrating an exemplary charged particle beam detection device 100. The charged particle beam detection device 100 in FIG1 includes a main chamber 10, a loading and locking chamber 20, an electron beam tool 40, an equipment front-end module (EFEM) 30, and a controller 50. The electron beam tool 40 is located inside the main chamber 10.

[0036] EFEM 30 includes a first loading port 30a and a second loading port 30b. EFEM 30 may include additional loading ports. The first loading port 30a and the second loading port 30b may, for example, receive a front-opening unit cassette (FOUP) containing a substrate to be tested (e.g., a semiconductor substrate or a substrate made of other materials) or a sample (the substrate, wafer, and sample are collectively referred to as "sample" below). One or more robotic arms (not shown) in EFEM 30 transport the sample to the loading locking chamber 20.

[0037] Loading-lock chamber 20 is used to remove gas surrounding the sample. This creates a vacuum, meaning the local gas pressure is lower than the ambient pressure. Loading-lock chamber 20 can be connected to a loading-lock vacuum pump system (not shown), which removes gas particles from loading-lock chamber 20. Operation of the loading-lock vacuum pump system allows the loading-lock chamber to reach a first pressure below atmospheric pressure. After reaching the first pressure, one or more robotic arms (not shown) transport the sample from loading-lock chamber 20 to main chamber 10. Main chamber 10 is connected to a main chamber vacuum pump system (not shown). The main chamber vacuum pump system removes gas particles from main chamber 10, causing the pressure around the sample to reach a second pressure below the first pressure. After reaching the second pressure, the sample is transported to an electron beam tool 40 for sample detection. Electron beam tool 40 may include a single-beam electro-optic device or a multi-beam electro-optic device.

[0038] The controller 50 is electronically connected to the electron beam tool 40. The controller 50 may be a processor (such as a computer) configured to control the charged particle beam detection device 100. The controller 50 may also include a processing circuitry configured to perform various signal and image processing functions. Although the controller 50 is... [picture] [1] is shown as being outside a structure including the main chamber 10, the loading and locking chamber 20, and the EFEM 30, but it should be understood that the controller 50 may be part of that structure. The controller 50 may be located in one of the components of the charged particle beam detection device or may be distributed above at least two of the components. While the present invention provides an example of a main chamber 10 for housing an electron beam detection tool, it should be noted that the nature of the invention is not limited in its broadest sense to a chamber for housing an electron beam detection tool. In fact, it should be understood that the foregoing principles may also be applied to other tools and other configurations of devices operating under a second pressure.

[0039] Now see [picture] [2], which is a schematic diagram illustrating an exemplary electron beam tool 40, the exemplary electron beam tool including as [picture] [1] An exemplary charged particle beam detection apparatus 100 includes a multi-beam detection tool. The multi-beam electron beam tool 40 (also referred to herein as apparatus 40) includes an electron source 201, an aperture plate 271, a condenser lens 210, a source conversion unit 220, a primary projection device 230, a motorized stage 209, and a sample holder 207. The electron source 201, aperture plate 271, condenser lens 210, and source conversion unit 220 are components of the illumination device included in the multi-beam electron beam tool 40. The sample holder 207 is supported by the motorized stage 209 to hold a sample 208 (e.g., a substrate or mask) for detection. The multi-beam electron beam tool 40 may further include a secondary projection device 250 and a associated electron detection device 240. The primary projection device 230 may include an objective lens 231. The electronic detection device 240 may include a plurality of detection elements 241, 242 and 243. The beam splitter 233 and the deflection scanning unit 232 may be located inside the primary projection device 230.

[0040] The components used to generate the primary beam can be aligned with the main electro-optical axis of device 40. These components may include: an electron source 201, a bore plate 271, a condenser lens 210, a source conversion unit 220, a beam splitter 233, a deflection scanning unit 232, and a primary projection device 230. The secondary projection device 250 and its associated electronic detection device 240 can be aligned with the secondary electro-optical axis 251 of device 40.

[0041] The electron beam tool 40, as part of the illumination device, includes a primary electro-optical axis 204. The secondary electro-optical axis 251 is the electro-optical axis of the electron beam tool 40 as part of the detection device. The primary electro-optical axis 204 may also be referred to herein as the primary optical axis (for ease of reference) or the charged particle optical axis. The secondary electro-optical axis 251 may also be referred to herein as the secondary optical axis or the secondary charged particle optical axis.

[0042] Electron source 201 may include a cathode (not shown) and an extractor or anode (not shown). During operation, electron source 201 is configured to emit electrons from the cathode as primary electrons. The primary electrons are extracted or accelerated by the extractor and / or anode to form a primary electron beam 202, which forms a primary beam crossover (virtual or real) 203. The primary electron beam 202 can be visualized as being emitted from the primary beam crossover 203.

[0043] In this configuration, the primary electron beam is a multi-beam upon its arrival at the sample and preferably before its arrival at the projection device. This multi-beam can be generated by the primary electron beam in a variety of different ways. For example, the multi-beam can be generated by a multi-beam array located before the crossover, a multi-beam array located in source conversion unit 220, or a multi-beam array located at any point in between. The multi-beam array may contain a plurality of electron beam manipulation elements configured in an array across the beam path. Each manipulation element can influence the primary electron beam to generate a sub-beam. Thus, the multi-beam array interacts with the incident primary beam path to generate a multi-beam path for the beam downstream of the multi-beam array.

[0044] During operation, the aperture plate 271 is configured to block peripheral electrons of the primary electron beam 202 to reduce the Coulomb effect. The Coulomb effect amplifies the size of each of the detector spots 221, 222, and 223 of the primary sub-beams 211, 212, and 213, thus degrading the detection resolution. The aperture plate 271 can also be referred to as a Coulomb aperture array.

[0045] The condenser lens 210 is configured to focus the primary electron beam 202. The condenser lens 210 can be designed to focus the primary electron beam 202 into a parallel beam that is orthogonally incident on the source conversion unit 220. The condenser lens 210 can be a movable condenser lens that can be configured to move the position of its first principal surface. The movable condenser lens can be configured to be magnetic. The condenser lens 210 can be an anti-rotation condenser lens and / or can be movable.

[0046] Source conversion unit 220 may include an image forming element array, an aberration compensator array, a beam limiting aperture array, and a pre-bending micro-deflector array. The pre-bending micro-deflector array deflects a plurality of primary sub-beams 211, 212, 213 of the primary electron beam 202 to enter perpendicularly into the beam limiting aperture array, the image forming element array, and the aberration compensator array. In this configuration, the image forming element array may function as a multi-beam array to generate a plurality of sub-beams, i.e., primary sub-beams 211, 212, 213, in a multi-beam path. The image forming array may include a plurality of electron beam manipulators, such as micro-deflector microlenses (or a combination thereof), to influence the plurality of primary sub-beams 211, 212, 213 of the primary electron beam 202 and form a plurality of parallel images (virtual or real) of the primary beam crossing 203, one image being for each of the primary sub-beams 211, 212, and 213. The aberration compensator array may include a field curvature compensator array (not shown in the figure) and an astigmatism compensator array (not shown in the figure). The field curvature compensator array may include a plurality of microlenses to compensate for the field curvature aberrations of the primary sub-beams 211, 212, and 213. The astigmatism compensator array may include a plurality of micro-astigmatism correctors to compensate for the astigmatic aberrations of the primary sub-beams 211, 212, and 213. The beam limiting aperture array may be configured to limit the diameter of the individual primary sub-beams 211, 212, and 213. [picture] [2] Three primary sub-beams 211, 212, and 213 are shown as examples, and it should be understood that the source conversion unit 220 can be configured to form any number of primary sub-beams. The controller 50 can be connected to [picture] [1] Various components of the charged particle beam detection device 100, such as the source conversion unit 220, the electronic detection device 240, the primary projection device 230, or the motorized stage 209. As explained in further detail below, the controller 50 can perform various image and signal processing functions. The controller 50 can also generate various control signals to control the operation of the charged particle beam detection device (including charged particle multi-beam device).

[0047] The condenser lens 210 can be further configured to adjust the current of the primary sub-beams 211, 212, and 213 downstream of the source conversion unit 220 by changing the focusing magnification of the condenser lens 210. Alternatively, the current of the primary sub-beams 211, 212, and 213 can be changed by altering the radial size of the beam limiting aperture corresponding to the individual primary sub-beams within the beam limiting aperture array. The current can be changed by altering both the radial size of the beam limiting aperture and the focusing magnification of the condenser lens 210. If the condenser lens is movable and magnetic, off-axis sub-beams 212 and 213 illuminating the source conversion unit 220 with a rotation angle can be generated. The rotation angle changes with the focusing magnification of the movable condenser lens or the position of the first principal plane. The condenser lens 210, as an anti-rotation condenser lens, can be configured to keep the rotation angle constant when the focusing magnification of the condenser lens 210 is changed. The condenser lens 210 (which is also movable) can maintain the rotation angle when the focusing magnification of the condenser lens 210 and the position of its first principal plane change.

[0048] Objective lens 231 can be configured to focus sub-beams 211, 212 and 213 onto sample 208 for detection and can form three detection spots 221, 222 and 223 on the surface of sample 208.

[0049] The beam splitter 233 can be, for example, a Wayne filter, which includes an electrostatic deflector that generates an electrostatic dipole field and a magnetic dipole field (not shown in Figure 2). In operation, the beam splitter 233 can be configured to apply an electrostatic force to the individual electrons of the primary sub-beams 211, 212, and 213 by the electrostatic dipole field. This electrostatic force is equal in magnitude but opposite in direction to the magnetic force applied to these individual electrons by the magnetic dipole field of the beam splitter 233. The primary sub-beams 211, 212, and 213 can therefore pass through the beam splitter 233 at least substantially with zero deflection angle and at least substantially straight.

[0050] The deflection scanning unit 232 is configured during operation to deflect primary sub-beams 211, 212, and 213 so that probe spots 221, 222, and 223 scan individual scanning areas across segments of the surface of sample 208. In response to the primary sub-beams 211, 212, and 213 or probe spots 221, 222, and 223 incident on sample 208, electrons are generated from sample 208, including secondary electrons and backscattered electrons. The secondary electrons propagate in three secondary electron beams 261, 262, and 263. Secondary electron beams 261, 262, and 263 typically contain secondary electrons (with electron energies ≤ 50 eV) and may also contain at least some backscattered electrons (with electron energies between 50 eV and the landing energies of primary sub-beams 211, 212, and 213). Beam splitter 233 is configured to deflect the paths of secondary electron beams 261, 262, and 263 toward secondary projection device 250. Secondary projection device 250 then focuses the paths of secondary electron beams 261, 262, and 263 onto a plurality of detection zones 241, 242, and 243 of electronic detection device 240. Detection zones may be individual detection elements 241, 242, and 243 configured to detect corresponding secondary electron beams 261, 262, and 263. Detection zones generate corresponding signals, which are sent to controller 50 or signal processing system (not shown) for example, to construct an image of the corresponding scan area of ​​sample 208.

[0051] Detection elements 241, 242, and 243 can detect corresponding secondary electron beams 261, 262, and 263. When the secondary electron beams are incident on detection elements 241, 242, and 243, these elements can generate corresponding intensity signal outputs (not shown in the figures). The outputs can be directed to an image processing system (e.g., controller 50). Each detection element 241, 242, and 243 can contain one or more pixels. The intensity signal output of the detection element can be the sum of the signals generated by all pixels within the detection element.

[0052] The controller 50 may include an image processing system comprising an image acquisition unit (not shown) and a storage device (not shown). For example, the controller may include a processor, computer, server, mainframe computer, terminal, personal computer, any type of mobile computing device, and the like, or combinations thereof. The image acquisition unit may include at least a portion of the controller's processing capabilities. Therefore, the image acquisition unit may include at least one or more processors. The image acquisition unit may be communicatively coupled to the electronic detection device 240 of the device 40 to allow signal communication, such as electrical conductors, fiber optic cables, portable storage media, IR, Bluetooth, the Internet, wireless networks, radio waves, and others, or combinations thereof. The image acquisition unit may receive signals from the electronic detection device 240, process the data contained in the signals, and construct an image based on that data. The image acquisition unit may thus acquire an image of sample 208. The image acquisition unit may also perform various post-processing functions, such as generating contours, overlaying indicators onto the acquired image, and the like. The image acquisition unit can be configured to adjust the brightness and contrast of the acquired image. The storage device can be a storage medium such as a hard drive, USB flash drive, cloud storage, random access memory (RAM), other types of computer-readable memory, and the like. The storage device can be coupled to the image acquisition unit and can be used to store scanned raw image data as raw images and post-processed images.

[0053] The image acquisition unit can acquire one or more images of a sample based on imaging signals received from the electronic detection device 240. The imaging signals may correspond to a scanning operation used for charged particle imaging. The acquired image may be a single image comprising a plurality of imaging regions. This single image can be stored in a memory. The single image may be an initial image that can be divided into a plurality of regions. Each of these regions may contain an imaging region containing the features of sample 208. The acquired image may comprise multiple images of a single imaging region of sample 208 sampled multiple times over a time period. These multiple images can be stored in a memory. The controller 50 can be configured to perform image processing steps using multiple images of the same location of sample 208.

[0054] The controller 50 may include a measurement circuitry (e.g., an analog-to-digital converter) to obtain the distribution of detected secondary electrons. Electron distribution data collected during the detection time window can be combined with corresponding scan path data from each of the primary sub-beams 211, 212, and 213 incident on the sample surface to reconstruct an image of the structure of the sample under test. The reconstructed image can be used to reveal various features of the internal or external structure of sample 208. The reconstructed image can also be used to reveal any defects that may exist in the sample.

[0055] The controller 50 controls the motorized stage 209 to move the sample 208 during the detection of the sample 208. The controller 50 enables the motorized stage 209 to move the sample 208 in one direction (preferably continuously) at least during the sample detection period, for example, at a constant speed. The controller 50 controls the movement of the motorized stage 209 such that it varies the speed of movement of the sample 208 depending on various parameters. For example, the controller may control the stage speed (including its direction) depending on the characteristics of the detection steps of the scanning procedure.

[0056] although [picture] [2] The demonstration device 40 uses three primary electron sub-beams, but it should be understood that the device 40 may use two or more primary electron sub-beams. The present invention does not limit the number of primary electron beams used in the device 40.

[0057] Now see [picture] [3], which is for explanation [picture] [1] A schematic diagram of an exemplary configuration of the source conversion unit of an exemplary charged particle beam detection device, and an exemplary multi-beam device. The device 300 may include an electron source 301, a pre-beam forming aperture array 372, and a focusing lens 310 (similar to...). [picture] [2] Condensing lens 210), source conversion unit 320, objective lens 331 (similar to) [picture] [2] Objective 231) and sample 308 (similar to) [picture] [2] Sample 208). The electron source 301, pre-beamforming aperture array 372, and condenser lens 310 may be components of the illumination device included in the device 300. The source conversion unit 320 and objective lens 331 may be components of the projection device included in the device 300. The source conversion unit 320 may be similar to... [picture] [2] Source conversion unit 220, wherein [picture] [2] The image forming element array is an image forming element array 322. [picture] [2] The aberration compensator array is an aberration compensator array of 324. [picture] [2] The beam limiting aperture array is beam limiting aperture array 321, and [picture] [2] The pre-bending micro-deflector array is a pre-bending micro-deflector array 323. The electron source 301, the pre-sub-beamforming aperture array 372, the condenser lens 310, the source conversion unit 320, and the objective lens 331 are aligned with the main electro-optical axis 304 of the device. The electron source 301 generates a primary electron beam 302 generally along the main electro-optical axis 304 and uses source crossing (virtual or real) 301S. The pre-sub-beamforming aperture array 372 cuts the peripheral electrons of the primary electron beam 302 to reduce the Coulomb effect that occurs thereafter. The Coulomb effect is the source of sub-beam aberrations caused by the interaction between electrons in different sub-beam paths. The primary electron beam 302 can be trimmed into a specified number of sub-beams, such as three sub-beams 311, 312, and 313, by the pre-sub-beamforming aperture array 372 of the pre-sub-beamforming mechanism. Although the three sub-beams and their paths have been mentioned in the preceding and following descriptions, it should be understood that the descriptions are intended to be applied to devices, tools, or systems having any number of sub-beams.

[0058] Source conversion unit 320 may include a small beam-limiting aperture array 321 with a beam-limiting aperture configured to limit sub-beams 311, 312, and 313 of the primary electron beam 302. Source conversion unit 320 may also include an image forming element array 322 with image forming micro-deflectors 322_1, 322_2, and 322_3. Individual micro-deflectors are associated with the path of each sub-beam. Micro-deflectors 322_1, 322_2, and 322_3 are configured to deflect the paths of sub-beams 311, 312, and 313 toward the electro-optic axis 304. The deflected sub-beams 311, 312, and 313 form a virtual image of source crossing 301S. A virtual image is projected onto sample 308 via objective lens 331, forming three detector spots 391, 392, and 393 on the sample. Each detector spot corresponds to the incident position of the sub-beam path on the sample surface. Source conversion unit 320 may further include an aberration compensator array 324 configured to compensate for aberrations in each of the sub-beams. Aberrations in each sub-beam typically exist in the detector spots 391, 392, and 393 that will form the sample surface. Aberration compensator array 324 may include an array of field curvature compensators (not shown) with microlenses. The field curvature compensators and microlenses are configured to compensate for significant field curvature aberrations in the detector spots 391, 392, and 393 of the sub-beams. Aberration compensator array 324 may include an array of astigmatism compensators (not shown) with micro-astigmatism correctors. The micro-astigmatism corrector is controlled to operate on the sub-beam to compensate for astigmatic aberrations present in additional probe spots 391, 392, and 393.

[0059] The source conversion unit 320 may further include a pre-bent micro-deflector array 323 with pre-bent micro-deflectors 323_1, 323_2, and 323_3 to bend the sub-beams 311, 312, and 313, respectively. The pre-bent micro-deflectors 323_1, 323_2, and 323_3 bend the paths of the sub-beams onto the fine beam confinement aperture array 321. The paths of the sub-beams incident on the fine beam confinement aperture array 321 may be orthogonal to the orientation plane of the fine beam confinement aperture array 321. The condenser lens 310 can guide the paths of the sub-beams onto the fine beam confinement aperture array 321. The condenser lens 310 can focus the three sub-beams 311, 312, and 313 into parallel beams along the main electro-optic axis 304, such that they are perpendicularly incident on the source conversion unit 320 corresponding to the fine beam confinement aperture array 321.

[0060] The image forming element array 322, the aberration compensator array 324, and the pre-bending micro-deflector array 323 may include multiple sub-beam manipulation device layers, some of which may be in the form of an array, such as micro-deflectors, microlenses, or micro-astigmatism correctors.

[0061] In the source conversion unit 320, the sub-beams 311, 312, and 313 of the primary electron beam 302 are deflected toward the main electro-optic axis 304 by the micro-deflectors 322_1, 322_2, and 322_3 of the image forming element array 322. It should be understood that the path of the sub-beam 311 may already correspond to the electro-optic axis 304 before reaching the micro-deflector 322_1, therefore the path of the sub-beam 311 may not be deflected by the micro-deflector 322_1.

[0062] Objective lens 331 focuses the sub-beams onto the surface of sample 308, that is, it projects three virtual images onto the sample surface. The three images formed by the three sub-beams 311 to 313 on the sample surface form three detector spots 391, 392, and 393 on the sample surface. The deflection angle of the sub-beams 311 to 313 is adjusted by objective lens 311 to reduce the off-axis aberration of the three detector spots 391 to 393. The three deflected beams thus pass through or approach the focal point in front of objective lens 331.

[0063] [picture] [2] and [picture] [3] At least some of the components described above may be individually or in combination with each other referred to as a manipulator array or manipulator because they manipulate one or more beams or sub-beams of charged particles.

[0064] The multi-beam detection tool described above includes a multi-beam charged particle device, which may be referred to as a multi-beam charged particle optical device or a multi-beam charged particle system, and has a single charged particle source. The multi-beam charged particle device includes an illumination device and a projection device. The illumination device generates multiple beams of charged particles from an intrinsically generated electron beam. The projection device projects the multiple beams of charged particles toward the sample. At least a portion of the sample surface is scanned using the multiple beams of charged particles.

[0065] The aforementioned multi-beam charged particle device may encounter several problems that complicate the simultaneous manipulation of the sub-beams of the multi-beam system.

[0066] To properly guide each of the individual sub-beam paths toward the sample surface, individual components, for example in the form of a manipulator array, can be provided for manipulating the path of each sub-beam individually. For example, the applied manipulation may be a deflection of the sub-beam path. For example, the manipulator array may be as described in Figures 2 to 4 and Figure 6 of EP 2715768A2.

[0067] For individual components to properly apply manipulation to the sub-beam, the following requirement must be met: the aberrations caused by manipulation must not be excessive. The degree of aberration depends on the uniformity of the electric field within the manipulation component, the fill factor of the manipulation component, and the magnitude of the electric field within the manipulation component. The magnitude of the electric field depends on the voltage applied to the electrodes within the manipulation component.

[0068] The degree of aberration depends on the uniformity of the electric field through which the sub-beam path travels. Ideally, the electric field across the component would be linear. However, in a planar diagram, the opening is circular, and a linear electric field can be approximated simply by providing a plurality of electrodes around the opening and applying an appropriate voltage at each electrode. As the number of electrodes used increases, the quality of the approximate linear field increases. However, increasing the number of electrodes within the component increases the component size. Increasing the number of electrodes also increases the complexity of providing wiring to all electrodes in the component and the associated drive circuitry.

[0069] The fill factor is the ratio of the diameter of the sub-beams within the control assembly to the diameter of the opening within the control assembly. In a planar view, the most uniform electric field within the assembly is at the center of the opening, while the electric field is least uniform towards the edges of the opening. The degree of aberration increases with increasing fill factor because the proportion of sub-beams farther from the center of the opening increases. For a given sub-beam diameter, the fill factor can be reduced by increasing the diameter of the assembly's opening.

[0070] The degree of aberration also depends on the magnitude of the voltage applied within the component to generate the electric field. At higher voltages, the non-uniformity of the electric field has a greater impact on the sub-beam path, thus increasing aberrations.

[0071] Due to the low fill factor and / or the requirement of a large number of electrodes, it is necessary to make each individual component relatively large and the wiring and driver circuitry complex. When manipulating each sub-beam requires relatively large individual components, the space constraints within the charged particle device impose limitations on both the number and density of sub-beams that can be provided.

[0072] Furthermore, in order to apply relatively large deflections to some sub-beam paths, relatively large voltages are required to generate electric fields. However, as explained above, the use of relatively large voltages increases the degree of aberrations.

[0073] The embodiments provide manipulator means for simultaneously applying substantially constant deflection to some or all of the paths of a plurality of sub-beams in a multi-beam configuration.

[0074] The manipulator device according to the embodiments reduces at least some of the manipulation requirements, particularly deflection requirements, of manipulator arrays comprising individual components for each sub-beam. The manipulator device according to the embodiments can provide primary deflection of the entire sub-beam path after deflection. This reduces the complexity of providing the manipulator array and improves control over the sub-beam paths within the charged particle device. The manipulator device according to the embodiments can apply substantially constant deflection to the sub-beam line without requiring a complex control circuitry system.

[0075] When using the manipulator device according to the embodiment, only the manipulator array needs to apply fine deflections to individual sub-beam paths. Large deflections are not required for components within the individual array, thus allowing for a simpler component design that requires only relatively small voltages. The simpler component design can contain fewer electrodes, thus reducing the complexity of the wiring and driver requirements for each of these components. Using lower voltages reduces the degree of aberration compared to using larger voltages. This allows for the use of smaller individual components for each sub-beam, as the fill factor of the components can be increased and the number of electrodes reduced for a specific degree of aberration. Using smaller individual components in the manipulator array increases the sub-beam density and / or the number of sub-beams that can be supported.

[0076] The manipulator device according to the embodiments is particularly suitable for providing passive electro-optical manipulation devices, such as pre-bending manipulation of charged particle paths within a charged particle device. Pre-bending manipulation may involve an applied deflection that remains substantially constant across a range of operating conditions. Pre-bending can cause the paths of the charged particle beam to converge. Another passive element is a collimator that collimates the path of the charged particle beam. Collimated multi-beams can be generated from converging or diverging sub-beam paths.

[0077] [picture] [4] is a schematic diagram of a manipulator device according to one embodiment. [picture] [4] is a planar view of a multi-beam system that can be directed along the axis of a charged particle. The manipulator device includes a first pair of electrodes 402, a second pair of electrodes 403, and a third pair of electrodes 404. The paths of the different lines of the three sub-beams 401 of the multi-beam system are between each of these pairs of parallel planar electrodes. Each pair of parallel planar electrodes may be referred to as a strip electrode.

[0078] Each electrode may be a planar plate. Each electrode may be mechanically supported at each or one of its ends. Each electrode may be mechanically supported at only one or both of its ends. Each electrode may be electrically connected at least one of its ends. Each electrode may be metallic, such as a metal plate or a metallized or metal-coated surface. Each electrode may each be, for example, a metal coating on the surface of an electrode support structure or body. Each pair of electrodes may comprise two such planar plates arranged parallel to each other and facing each other. An electric field E is applied between each pair of electrodes. For each pair of electrodes, an electric field is applied in a direction orthogonal to the surface of the electrodes (i.e., the planar plates) and also substantially orthogonal to the path of each sub-beam between the pair of electrodes. Each pair of electrodes may thereby electrostatically interact with the plurality of sub-beams passing therebetween and may thereby deflect the path of the sub-beams.

[0079] A charged particle multi-beam consists of a plurality of sub-beam lines. Therefore, a multi-beam is a two-dimensional array of sub-beams, which can be a series of a plurality of lines of sub-beams. Each pair of electrodes is configured to deflect the paths of all sub-beams within the entire line of the sub-beam.

[0080] The amount of deflection of the path of each line of the sub-beam applied by each pair of electrodes depends on the potential difference between the electrodes. Therefore, the amount of deflection of the path of the charged particle beam can be determined by the magnitude of the potential difference between parallel plates applied on either side of the beam path. Thus, a relatively large deflection can be achieved by applying a larger potential difference between the opposing electrode surfaces.

[0081] The potential difference between each pair of electrodes can be individually and separately controlled. This allows each of the paired electrodes to apply a different amount of deflection to the path of the sub-beam. Therefore, the amount of deflection applied across the array is set and actively controlled. Furthermore, the directions of the applied electric field between the paired electrodes may be different. This allows for deflections applied to the path of the sub-beam in opposite directions.

[0082] In one embodiment, during operation, one or more pairs of electrodes in the manipulator array can be configured to have zero potential difference between them. Therefore, although each pair of electrodes can deflect the path of a sub-beam in the sub-beamline, one or more of these pairs of electrodes can be operated such that no electric field is applied between the electrodes. This pair of electrodes will not deflect the path of the sub-beam traveling between them.

[0083] [picture] [5] is a schematic diagram of a manipulator device according to one embodiment. [picture] [5] Five separate lines of sub-beam paths are shown. For each line, two sub-beam paths are shown. For each sub-beam line, there are separate pairs of electrodes between which the sub-beam lines travel. These electrodes are supported by electrode supports 501, 502, 503, 504, 505, and 506. Each electrode support may be mechanically supported at each of its ends or at one of its ends. Each electrode support may be mechanically supported at only one or both of its ends. Each of the electrode supports may be made of, for example, glass or a material of the substrate on which the electrodes are formed (e.g., silicon). The potential difference between each pair of electrodes may be different in magnitude and / or direction. Embodiments include those in which there is no potential difference between one or more of the pairs of electrodes. The example shown in the figure is between intermediate pairs of electrodes (see E0). The applied potential difference between the pairs of electrodes is [picture] [5] are shown as E1, E2, E3, and E4. The magnitude of the electric field E1 is greater than that of E2, which in turn is greater than E0. Similarly, the magnitude of the electric field E4 is greater than that of E3, which in turn is greater than E0. The directions of the fields of E3 and E4 are opposite to those of each of E1 and E2. In practice, E1 and E4 may have similar or virtually the same electric field magnitudes but opposite directions; and E3 and E4 may have similar or the same magnitudes but opposite directions. In an alternative configuration, a potential difference may be applied across the intermediate electrodes such that E0 is not zero.

[0084] like [picture] As shown in [5], the effect of the applied potential difference can be to generate downstream beam crossing points for the paths of individual sub-beamlines. No potential difference, E0, is applied between the pairs of electrodes through which the intermediate sub-beamline travels. The path of the intermediate sub-beamline is therefore not substantially deflected by a pair of electrodes. The potential difference E1 applied between the pairs of electrodes through which the leftmost sub-beamline travels in the figure can have the same magnitude and opposite sign as the potential difference E4 applied between the pairs of electrodes through which the rightmost sub-beamline travels. The potential difference E2 applied between the pairs of electrodes through which the second leftmost sub-beamline travels can have the same magnitude and opposite sign as the potential difference E3 applied between the pairs of electrodes through which the second rightmost sub-beamline travels. The magnitudes of potential differences E1 and E4 can be greater than those of potential differences E2 and E3, causing the paths of the leftmost and rightmost sub-beamlines to be deflected more than those of the second leftmost and second rightmost sub-beamlines.

[0085] The path of the first sub-beam in each sub-beamline of the downstream beam from the controller may intersect the path of the first sub-beam in other sub-beamlines at substantially the same first downstream beam position. The path of the second sub-beam in each sub-beamline may intersect the path of another second sub-beam in other sub-beamlines at substantially the same second downstream beam position. The first downstream beam position may differ from the second downstream beam position.

[0086] although [picture] [5] Two sub-beams are shown in each sub-beam line, but embodiments include any number of sub-beams in each sub-beam line.

[0087] although [picture] [5] Five separate sub-beamlines are shown, but the embodiment includes any number of sub-beamlines and a separate pair of electrodes for each sub-beamline.

[0088] The embodiments also include applying a potential difference to one or more of the paired electrodes so that the paths of two or more of the sub-beams diverge rather than converge.

[0089] exist [picture] [5] schematically illustrates the parallel structures through which sub-beams pass. It should be understood that these parallel structures represent electrodes through which the sub-beams travel, and also represent the support structures for the electrodes. The specific configuration of how the electrodes are supported by the support structures can be achieved using a variety of different techniques.

[0090] like [picture] [4] and [picture] As shown in [5], the sub-beam travels only between adjacent electrodes in a pair of electrodes to deflect the beam path. When each of these electrodes is in a different pair of electrodes used for deflecting the beam path, the sub-beam does not travel between adjacent electrodes. For adjacent electrodes of each of these electrodes in different pairs of electrodes, these adjacent electrodes may be supported by a solid support structure (such as a substrate), such as... [picture] As shown in [5]. Alternatively, adjacent electrodes can be spaced apart, such as... [picture] As shown in [4].

[0091] Between each of the adjacent electrodes, a high-voltage shield can be provided in the electrode support structure to electrically isolate the ends of the electrodes in contact with the support structure from each other.

[0092] The embodiments also include more than one set of paired electrodes for the path of the deflector beamline. Each of the paired electrode sets may be as described above. [picture] [4] [and illustrations] [5] The paired parallel plate electrode assembly described. Each of the paired electrode assemblies can be provided at a different location along the charged particle axis (i.e., the path of the multi-beam).

[0093] In each of a set (or array) of paired electrodes, and for each paired electrode to which an applied electric field is applied, all applied electric fields are orthogonally aligned with the same axis of the set of paired electrodes. Although the applied potential difference between the paired electrodes may cause some applied electric fields to be in opposite directions, the applied electric fields are still orthogonally aligned with the same axis. The paired parallel electrodes in each set are aligned parallel to the axis of that set. [picture] As shown in [5], the potential difference applied between pairs of parallel plates facing each other can depend on the distance from the midpoint of the array. For example, the electric field can be proportional to the distance from the midpoint of the parallel plate array. Thus, the applied deflection can guide the beam path of the downstream beam of the manipulator array to a point where the line of the path intersects the beam path at each of the individual line positions where they intersect.

[0094] The embodiment includes multiple sets of paired electrodes arranged in series along a multi-beam path. The axes of two or more of these sets can be aligned in different directions. All sets can have their axes aligned in different directions. When the axes of two or more of the sets are aligned in different directions, these differently aligned sets will apply deflections of different orientations to the paths of the sub-beams in the multi-beam system. Having more than one set of paired electrodes thus increases the amount of control that can be applied to the paths of the sub-beams.

[0095] like [picture] As shown in [6], a first set or array of paired electrodes 601 and a second set or array of paired electrodes 602 may exist. These two arrays align their parallel plates orthogonally to each other and also orthogonally to the multi-beam path. The first and second sets of paired electrodes are provided at different locations along the multi-beam path 603. The axes of each of the first and second sets of paired electrodes are aligned in different directions. Although... [picture] [6] Two electrode sets are shown, but the embodiments include any number of electrode sets.

[0096] Although the electrode arrays are described as orthogonal to each other (in planar orthogonality), they may have any relative angles to each other, as long as such axes represent the axes used in the present invention in the discussion or the axes known in the scheduling discussion.

[0097] The embodiments include multiple different configurations of sets of paired electrodes, such that each set of paired electrodes is required to deflect different configurations of the sub-beam line.

[0098] [picture] [7A] is a schematic planar view of the sub-beams in the sub-beamline configuration (i.e., along the optical axis of the charged particles). The sub-beam configuration shown can be called a hexagonal configuration because generally all sub-beams are positioned at the vertices of a plurality of hexagonal rings. The beam configuration can follow a hexagonal closed-enclosure configuration, which can be a regular form of a two-dimensional array. The sub-beams are configured in a plurality of different lines. Relative to [picture] As shown in [7A], all sub-beams are aligned with lines parallel to both the horizontal and vertical axes. Sub-beams are also aligned with lines diagonally opposite to the horizontal and vertical axes. In a variation, the beam configuration can be adjusted by offsetting, shifting, or skewing the beam configuration to optimize the array for scanning configuration, for example, to prevent overlap of sub-beam paths.

[0099] All sub-beams in a multi-beam configuration can therefore be deflected by a set of paired electrodes having axes aligned with the axis of the multi-beam configuration pattern. For the configuration shown in Figure 7A, the axes are horizontal, vertical, and along any of the diagonals of the horizontal and vertical axes.

[0100] [picture] [7B] Demonstrates how a plurality of sets of paired electrodes can be aligned according to one embodiment having a hexagonal beam configuration. Each array of paired electrodes is located at a different position along the path of the multi-beam configuration. That is, the arrays of paired electrodes can be sequentially arranged along the path of the multi-beam configuration. [picture] As shown in [7B], there can be a first, second, and third set of paired electrodes. The axis of the first set can be aligned parallel to the horizontal axis, the axis of the second set can be aligned along one of the diagonals, and the axis of the third set can be aligned along the other diagonal. When the three sets of paired electrodes are used in this alignment, the pitch (i.e., spacing) between the different paired electrodes within each set can be lower than the pitch required when only two orthogonally aligned sets of paired electrodes are used. [picture] As shown in [7B], the paired electrodes within each set may also be slightly misaligned relative to each other. That is, each pair of electrodes within the set is aligned in the same direction and has the same length. However, the ends of each pair of electrodes are not aligned with each other in a direction orthogonal to the direction in which each pair of electrodes within the set is aligned.

[0101] The use of multiple different alignment sets of paired electrodes allows for improved control over the orientation of sub-beam paths in multi-beam configurations. Furthermore, it enables the easy integration of arrays of paired electrodes into electro-optic architectures designed for hexagonal beam configurations.

[0102] It should be noted that deflection of a charged particle beam without reverse deflection can induce aberrations in the deflected charged particle beam. In this configuration, sub-beams further away from the electro-optic axis are deflected more and therefore exhibit greater aberrations. Therefore, after the charged particle sub-beams are focused by manipulators of a plurality of parallel plate arrays, this multi-beam configuration can contain aberrations. These aberrations can be corrected by manipulating the sub-beams through one or more astigmatism correctors positioned in the paths of the multi-beam configuration.

[0103] The embodiments also include other configurations of sub-beams within the multi-beam system. When viewed along the optical axis of the charged particles, the positions of the sub-beams within the multi-beam system may substantially correspond to the vertices of: substantially square grids, substantially rhomboid grids, substantially skewed square grids, substantially displaced square grids, substantially flat square grids, substantially offset square grids, substantially hexagonal grids, substantially displaced hexagonal grids, substantially flat hexagonal grids, substantially offset hexagonal grids, and / or substantially skewed hexagonal grids. The configuration of the paired planar electrode surfaces in each manipulator device may be determined depending on the configuration of the sub-beams within the multi-beam system, such that each pair of electrodes is configured to deflect the sub-beam lines.

[0104] Specifically, when the positions of the sub-beams within a multi-beam configuration correspond to the vertices of a substantially square grid, two sets of paired electrodes can be provided. These two sets can be a first set of paired electrodes 601 and a second set of paired electrodes 602. The first and second pairs of electrodes can be aligned in orthogonal directions such that all sub-beam paths can be deflected toward the charged particle optical axis and a single crossover position. When the positions of the sub-beams within a multi-beam configuration alternatively correspond to the vertices of a substantially hexagonal grid, three sets of paired electrodes can be provided. These sets can be aligned in different directions, wherein the angular spacing between all adjacent alignments is the same, such that all sub-beam paths can be deflected toward the charged particle optical axis and a single crossover position. In such a configuration, the multi-beam manipulator can have multiple arrays of parallel plates arranged in series, each array corresponding to and aligned with a different axis of the multi-beam configuration.

[0105] The embodiments also include sub-beams within a multi-beam configuration whose positions correspond to the vertices of a substantially hexagonal grid, but only provide two orthogonally aligned sets of paired electrodes. [picture] [7B] contains a square indicating a subset of the sub-beams. It is evident from the side of the square that, regardless of the underlying hexagonal pattern of the sub-beams, the sub-beams remain linearly aligned in the orthogonal direction, which is... [picture] The horizontal and vertical lines shown in [7B]. For example, based on [picture] As shown in [7B], all horizontal lines of the sub-beams can be deflected by the first set of paired electrodes, and all vertical lines of the sub-beams can be deflected by the second set of paired electrodes. It should be noted that within the first set of paired electrodes, the pitch (i.e., spacing) between adjacent electrodes arranged to deflect different sub-beam lines is greater than the corresponding pitch within the second set of paired electrodes. When the sub-beam positions correspond to a regular hexagonal grid, the proportional difference in pitch can be... However, embodiments include reducing and / or increasing this pitch difference by using sub-beams configured with substantially offset, displacement, skew, and / or flat hexagonal grids.

[0106] The embodiments therefore provide one or more multi-beam manipulator devices for deflecting the paths of a plurality of sub-beams in a charged particle multi-beam. A primary deflection of the path to the sub-beam can be applied by each multi-beam manipulator device. The sub-beams are arranged in an array, wherein the sub-beams are arranged in a plurality of lines. Each multi-beam manipulator device includes an electrode set comprising a plurality of pairs of parallel planar electrode surfaces. Each pair of electrodes includes a first planar electrode surface disposed along one side of one of the lines of the sub-beams, and a second planar electrode surface disposed parallel to the first planar electrode surface and along the opposite side of the line of the sub-beams. Each pair of parallel planar electrode surfaces is configured to interact statically with the entire linearity of the sub-beams in the multi-beam, such that it can apply a deflection amount to the path of the sub-beams. Within the set of paired electrodes, all pairs of electrodes can deflect the path of the sub-beams in the multi-beam in the same direction. Alternatively, one or more pairs of electrodes may deflect the path of the sub-beam in the opposite direction to that of one or more other pairs of electrodes. One or more pairs of electrodes within the assembly may not apply any deflection to the path of the sub-beam.

[0107] The paired electrodes within each multi-beam manipulator device can be configured to apply different deflection amounts to the sub-beams.

[0108] All pairs of electrodes within each multi-beam manipulator device can be configured to interact statically with the entire linearity of a sub-beam in the multi-beam array, thereby applying deflection to the path of the sub-beam. Alternatively, one or more, but not all, of the pairs of electrodes within each multi-beam manipulator device can be configured to interact statically with the entire linearity of a sub-beam in the multi-beam array, thereby applying deflection to the path of the sub-beam.

[0109] The lines of the sub-beams within a multi-beam can all be parallel to each other, and all the electrodes in each multi-beam manipulator device can be configured to deflect all the sub-beams within the multi-beam.

[0110] All pairs of electrodes within each multi-beam manipulator device can be configured such that each pair of electrodes can deflect only one sub-beam line in the multi-beam. Alternatively, one or more of the pairs of electrodes within each multi-beam manipulator device can be configured such that they can deflect two or more lines of the sub-beam in the multi-beam.

[0111] All the electrodes in each multi-beam manipulator device can be configured to be arranged in the same plane, which is substantially orthogonal to the charged particle optical axis of the multi-beam (i.e., the path of the multi-beam).

[0112] All pairs of electrodes within each multi-beam manipulator device can be configured such that the applied electric field between each pair of electrodes is substantially orthogonal to the optical axis of the charged particle. The applied electric field between each pair of electrodes can be substantially constant during operation of the multi-beam manipulator device.

[0113] Each pair of electrodes within each multi-beam manipulator device can be configured such that the applied electric field differs in direction and / or magnitude from the electric fields applied by other pairs of electrodes. The applied deflection of any of the paths of the sub-beam lines in the multi-beam array can therefore differ in direction and / or magnitude from the deflection applied by any other of the paths of the sub-beam lines. Each applied electric field can be equal in magnitude and opposite in direction to the electric field applied by another applied electric field. The applied electric field in the multi-beam manipulator device can be configured such that the paths of the sub-beam lines are deflected such that the path of each sub-beam line intersects the paths of all other lines of the sub-beams downstream of the multi-beam manipulator device. In one configuration, the applied electric field may depend on the distance of each pair of parallel plates from the midpoint of the array, and additionally or alternatively, the direction of the electric field applied between the pairs of parallel plates may depend on the direction of that pair toward the midpoint of the array. The midpoint can correspond to the position of the electro-optic axis in the direction across the parallel plate array (relative to the beamline along the specific array).

[0114] As described above, the embodiments also include a multi-beam manipulator configuration. The multi-beam manipulator configuration includes a plurality of multi-beam manipulator devices disposed at different locations along the charged particle optical axis and / or the multi-beam path. The axis of each multi-beam manipulator device may be aligned in different directions. For example, the multi-beam manipulator configuration may include multi-beam manipulator devices having axes orthogonally aligned with each other and / or multi-beam manipulator devices having axes aligned with each other at 30 degrees, 60 degrees, 90 degrees, 120 degrees, or 150 degrees.

[0115] A multi-beam charged particle device (such as an illuminator) may include a charged particle source configured to emit a beam of charged particles, and a multi-beam generator configured to generate multiple beams of charged particles depending on the beam. According to the embodiments described above, which are capable of manipulating sub-beamlines within a multi-beam charged particle beam, the charged particle device may include a multi-beam manipulator device and / or a multi-beam manipulator configuration.

[0116] The charged particle optical axis of a multi-beam charged particle device can be defined as parallel to the average direction of the sub-beams in the multi-beam output from the multi-beam generator.

[0117] The multi-beam charged particle device may further include one or more manipulators for manipulating each of the sub-beams and / or the paths of the sub-beams. All sub-beams or sub-beam paths can thus be individually manipulated by an array of manipulators. The manipulator array can be configured to substantially collimate the paths of the sub-beams in the multi-beam array, or to apply any other type of manipulation. Each of the individual manipulators in the manipulator array may include, for example, a quadrupole, octupole, or dodecupole electrode configuration. As described above, the use of one or more manipulator devices according to the embodiments results in only the manipulators needing to apply fine manipulation to the sub-beam paths, and this provides several advantages, such as simplified design and implementation of the manipulator array and an increase in the number and density of individual manipulators in the manipulator array. Fine manipulation can be achieved at low operating voltages, thereby reducing wiring and routing requirements.

[0118] like [picture] As shown in [8], individual manipulators used to manipulate sub-beams can be configured in the form of a manipulator array. [picture] [8] An array of manipulators for manipulating 25 sub-beams arranged in a square grid is shown. The manipulator array may contain different numbers and configurations of manipulators that operate as needed in conjunction with the number and configuration of the sub-beams in the multi-beam array.

[0119] [picture] [9] A schematic diagram showing the cross-section in the zy plane of a portion of the device passing through a charged particle. For example... [picture] As shown in [9], 902 may be a manipulator device aligned along the x-axis according to an embodiment. 904 may be a manipulator device aligned along the y-axis according to an embodiment. The manipulator array may be provided in one or more of positions 901, 903, or 905 in a multi-beam path. Thus, more than one manipulator array may be provided. The amount of aberration caused by the manipulators can be minimized when all sub-beam paths through the manipulators in the manipulator array are substantially perpendicular to the plane of the manipulator array. This may be an advantage of positioning one or more of the manipulator arrays in these positions along the charged particle axis, for example, all manipulator arrays may be located upstream of the manipulator device (e.g., in the...). [picture] [9] Position 901 in the middle).

[0120] [picture] Part of the charged particle device shown in [9] is configured to converge multiple sub-beams to a single focal point. Due to the convergence of the sub-beams, the pitch (i.e., separation) between adjacent components in the manipulator array can be lower in the y-direction for the manipulator array located at 903 than for the manipulator array located at 901. Similarly, the pitch between adjacent components in the manipulator array can be lower in the x-direction for the manipulator array located at 905 than for the manipulator array located at 901 and / or 903.

[0121] The drive signals of the manipulator device and / or manipulator array can be varied to control the position of the sub-beam's focal point along the charged particle's optical axis and / or control the position of the focal point in the xy plane. The manipulator device can also be configured to apply corrections for any errors in the sub-beam's x-position and / or y-position.

[0122] The embodiment also includes the divergence of sub-beams entering the charged particle device, such that the multiple beams are broadened beams. The manipulator device can be configured to collimate the diverging sub-beams. In this configuration, the pitch between the components of the manipulator array can alternatively increase with the downstream beam position of the manipulator array.

[0123] It should be noted that [picture] [9] Not drawn to scale. In a typical implementation of a charged particle device, the separation in the z-direction between the manipulator array and each of the manipulator devices can be several millimeters. The distance in the z-direction to the focal point of the sub-beam can be several hundred millimeters from the position of the manipulator device.

[0124] The embodiments also include providing one or more astigmatism correctors in the path of the multi-beam path. An astigmatism corrector array with a manipulator array structure can be positioned... [picture] [9] At one or more of positions 901, 903, and 905, and / or at the upstream and / or downstream beams of this portion of the charged particle device. Each astigmatism corrector element is a multi-electrode device. Each astigmatism corrector may include a shield for protection. The shield may be an immediate upstream beam of the astigmatism corrector element array to protect the astigmatism corrector elements from retaining electrons. The shield may take the form of a substrate having apertures that positionally correspond to the positions of the astigmatism corrector array.

[0125] The embodiments include any number and configuration of sub-beams within a multi-beam configuration. For example, the configuration of sub-beams in a multi-beam configuration may be n times m, where: n is 3, 11, 1000 or higher; and m is 3, 11, 1000 or higher.

[0126] The height of each electrode of the manipulator device, that is, the length along the optical axis of the charged particle, can be several hundred micrometers, such as about 300 µm.

[0127] The space between the two electrodes in a pair of electrodes can range from about 50 µm to several hundred micrometers.

[0128] Each electrode can be made of, for example, metal-coated silicon or highly doped silicon.

[0129] The embodiments include several modifications and variations of the techniques described above.

[0130] Multi-beam charged particle devices can be components of detection (or metrology) tools or parts of electron beam lithography tools. According to embodiments, multi-beam charged particle devices can be used in a variety of different applications, typically including electron microscopy (not just SEM and lithography).

[0131] The embodiments include a multi-beam detection and / or metrology tool that includes the manipulator device described above according to the embodiments. The manipulator device may be part of a scanning device configured to project multiple beams of charged particles onto a sample. The multi-beam detection tool may include a detector configured to detect charged particles, such as secondary electrons, received from an illuminated sample.

[0132] The embodiments also include a multi-beam lithography tool, which includes the manipulator device described above according to the embodiments.

[0133] Specifically, a multi-beam charged particle device may include the manipulator device according to the embodiments and the references above. [picture] [1] [To the image] [3] Any one or both of the components of the device described.

[0134] Multi-beam charged particle devices may contain a single charged particle source, such as [picture] [1] [To the image] As shown in [3]. Alternatively, a multi-beam charged particle device may comprise a plurality of charged particle sources. A separate row may exist for each source, and manipulator devices according to embodiments are provided in each row. Alternatively, a multi-beam charged particle device may comprise a plurality of charged particle sources and only a single row. One or more manipulator devices according to embodiments may be provided in this single row.

[0135] Throughout the embodiments, a charged particle optical axis is described. This axis describes the path of the charged particle through and from the lighting device. Sub-beams of the output multi-beam system may all be substantially parallel to the charged particle optical axis. This charged particle optical axis may be the same as or different from the mechanical axis of the lighting device.

[0136] The embodiments include the following statements.

[0137] According to a first aspect of the present invention, a multi-beam manipulator device is provided, configured to operate on a plurality of sub-beam paths in a charged particle multi-beam to deflect the plurality of sub-beam paths, wherein the sub-beams are arranged in an array, wherein the sub-beams are arranged in a plurality of lines, the multi-beam manipulator device comprising: an electrode assembly including a plurality of pairs of parallel planar electrode surfaces; wherein: a first pair of parallel planar electrode surfaces in the assembly includes a first planar electrode surface arranged along one side of one of the lines of the sub-beams, and a second planar electrode surface arranged parallel to the first planar electrode surface and along one opposite side of the lines of the sub-beam paths; a second pair of parallel planar electrode surfaces in the assembly The surface includes a first planar electrode surface disposed along one side of a different one of the lines of the sub-beam path, and a second planar electrode surface disposed parallel to the first planar electrode surface and along the opposite side of the different one of the lines of the sub-beam path; the first pair of parallel planar electrode surfaces are configured to interact statically with the entire linearity of one of the sub-beams in the multi-beam array, such that they can apply a first deflection amount to the paths of the sub-beams in a first direction; the second pair of parallel planar electrode surfaces are configured to interact statically with the entire linearity of one of the sub-beams in the multi-beam array, such that they can apply a second deflection amount to the paths of the sub-beams in a second direction; and the first direction is opposite to the second direction.

[0138] Preferably, the magnitude of the first deflection is different from the magnitude of the second deflection.

[0139] Preferably, each pair of parallel planar electrode surfaces in the set is configured to interact statically with the entire linear path of one of the sub-beams in the multi-beam array, thereby applying a deflection to the path of the sub-beam.

[0140] Preferably, the complex pairs of parallel planar electrode surfaces are configured such that they can deflect all of the sub-beams in the array, which are substantially parallel to each other across the array.

[0141] Preferably, the complex pairs of parallel planar electrode surfaces are configured such that they can deflect at least two, but not all, of the sub-beams in the array, which are substantially parallel to each other across the array.

[0142] Preferably, each pair of parallel planar electrode surfaces in the set is configured such that it can deflect only one sub-beamline in the multi-beam.

[0143] Preferably, all of these pairs of parallel planar electrode surfaces are arranged in the same plane, which is substantially orthogonal to the optical axis of the charged particles.

[0144] Preferably, each pair of parallel planar electrode surfaces is configured to apply an electric field between its first and second planar surfaces to electrostatically deflect all such paths of a sub-beam in a sub-beamline; and the applied electric field is substantially orthogonal to the optical axis of the charged particle.

[0145] Preferably, in use, each pair of parallel planar electrode surfaces applies a substantially constant electric field between its first and second planar surfaces to deflect the paths of all such sub-beams in a sub-beamline.

[0146] Preferably, each pair of parallel planar electrode surfaces is configured to apply an electric field that is different in direction and / or magnitude from the electric fields applied by the other pairs of parallel planar electrode surfaces, such that the applied deflection to each sub-beamline in a multi-beam is different in direction and / or magnitude.

[0147] Preferably, for each of one or more pairs of parallel planar electrode surfaces, the electric field applied by one pair of parallel planar electrode surfaces is equal in magnitude and opposite in direction to the electric field applied by the other pair of parallel planar electrode surfaces.

[0148] Preferably, when viewed along the optical axis of the charged particle, the positions of the sub-beams within the multi-beam substantially correspond to the vertices of a substantially square grid, a substantially rhomboid grid, and / or a substantially skewed or displaced square grid.

[0149] Preferably, when viewed along the optical axis of the charged particle, the positions of the sub-beams within the multi-beam substantially correspond to the vertices of a substantially hexagonal grid and / or a substantially skewed or displaced hexagonal grid.

[0150] According to a second aspect of the present invention, a multi-beam manipulator configuration is provided, comprising: a first multi-beam manipulator device according to the first aspect; and one or more other multi-beam manipulator devices, wherein each of the one or more other multi-beam manipulator devices is a multi-beam manipulator device according to the first aspect; wherein each multi-beam manipulator device is disposed at a different position along the charged particle optical axis of the multi-beam manipulator configuration.

[0151] Preferably, the paired planar electrode surfaces are aligned in the same direction within each multi-beam manipulator device; and aligned in a different direction within each multi-beam manipulator device.

[0152] Preferably, the multi-beam manipulator configuration includes a second multi-beam manipulator device; and the surfaces of the planar electrodes in the second multi-beam manipulator device are substantially orthogonal to the first multi-beam manipulator device and aligned with the downstream path.

[0153] Preferably, the multi-beam manipulator configuration includes a second multi-beam manipulator device; the multi-beam manipulator configuration includes a third multi-beam manipulator device; and the surfaces of the planar electrodes in the first, second and third multi-beam manipulator devices are each aligned in a different direction.

[0154] Preferably, the array comprises three different sets of lines, each set of lines being aligned in a different direction.

[0155] Preferably, for at least one of the multi-beam manipulator devices, the one or more pairs of parallel electrode surfaces are configured to deflect the path of each sub-beam line such that the path of each sub-beam line intersects with the paths of all other lines of the sub-beams of the downstream beam from at least one of the multi-beam manipulator devices.

[0156] According to a third embodiment of the present invention, a charged particle system is provided, comprising: a charged particle source configured to emit a beam; a multi-beam generator configured to generate a multi-beam depending on the beam, wherein the multi-beam includes a plurality of sub-beams; and a multi-beam manipulator device according to a first embodiment or a second embodiment configured to manipulate the paths of the sub-beams in the multi-beam generated by the multi-beam generator.

[0157] Preferably, the optical axis of the charged particle is defined as parallel to the average direction of the sub-beams in the multi-beam output from the multi-beam generator.

[0158] Preferably, the system further includes a path for manipulating each of the sub-beams such that the paths of the sub-beams can be individually manipulated by one or more manipulators.

[0159] Preferably, the manipulators used to manipulate the sub-beams are configured to substantially collimate the paths of the sub-beams in the multi-beam array.

[0160] Preferably, these charged particles are electrons.

[0161] According to a fourth state sample of the present invention, an electron beam detection tool comprising a charged particle system according to a third state sample is provided.

[0162] According to a fifth state of the present invention, an electron beam lithography tool comprising a charged particle system according to a third state is provided.

[0163] According to a sixth aspect of the present invention, a multi-beam manipulator device is provided, configured to operate on a plurality of sub-beam paths in a charged particle multi-beam to deflect the plurality of sub-beam paths, wherein the sub-beams are arranged in an array, wherein the sub-beams are arranged in a series of lines, the multi-beam manipulator device comprising: a plurality of pairs of parallel planar electrode surfaces; wherein: a first pair of parallel planar electrode surfaces comprises two opposing planar parallel electrode surfaces arranged along at least one side of the lines of the sub-beams; a second pair of parallel planar electrode surfaces comprises two opposing planar parallel electrode surfaces arranged along at least another side of the lines of the sub-beams; the first pair of parallel planar electrode surfaces and the second pair of parallel planar electrode surfaces extend across the multi-beam to cross the array and are configured to electrostatically interact with the respective sub-beam paths in the lines between the pairs of surfaces during operation.

[0164] According to a seventh embodiment of the present invention, a multi-beam manipulator is provided, configured to manipulate an array of sub-beam paths of a charged particle multi-beam, the sub-beams being arranged along lines in the array, the lines being in at least two different linear directions. The multi-beam manipulator device includes: a plurality of deflector devices corresponding to the plurality of linear directions in the array and arranged at different positions along the paths of the multi-beams, wherein each deflector device includes a plurality of pairs of parallel planar electrode surfaces, the parallel planar electrode surfaces of each deflector device being aligned with a different linear direction, the plurality of pairs of parallel planar electrode surfaces including: a first pair of parallel planar electrode surfaces. A first pair of parallel planar electrode surfaces includes two opposing planar parallel electrode surfaces arranged along either side of at least one of the lines of the sub-beams; a second pair of parallel planar electrode surfaces includes two opposing planar parallel electrode surfaces arranged along either side of at least another of the lines of the sub-beams, the other of the lines of the sub-beams being parallel to the at least one of the lines of the sub-beams; and the first pair of parallel planar electrode surfaces and the second pair of parallel planar electrode surfaces extend across the multi-beam extension to traverse the array and are configured to electrostatically interact with the respective sub-beam paths in the lines between the paired surfaces during operation.

[0165] According to an eighth embodiment of the present invention, a multi-beam manipulator is provided, configured to manipulate an array of sub-beam paths of a charged particle multi-beam, the sub-beams being arranged along lines in the array in at least two different linear directions. The multi-beam manipulator device includes a plurality of deflector devices corresponding to the plurality of linear directions in the array and positioned along the multi-beam paths, wherein each deflector device includes a plurality of planar parallel-opposite electrode surfaces, the planar parallel electrode surfaces of each deflector device being aligned with a different linear direction, the plurality of pairs of parallel planar electrode surfaces including at least two pairs of opposing parallel planar electrode surfaces, wherein the parallel surfaces of each pair of opposing planes are configured to span the multi-beam array on either side of at least one different line of the sub-beam paths, such that in operation, all the sub-beam paths in the respective at least one line between each pair of opposing parallel planar electrode surfaces and the surfaces interact electrostatically.

[0166] Preferably, the multi-beam manipulator is configured to deflect the sub-beams to a focal point.

[0167] According to a ninth aspect of the present invention, a method is provided for deflecting the paths of a plurality of sub-beams in a charged particle multi-beam, wherein the sub-beams are arranged in an array, wherein the sub-beams are arranged in a plurality of lines, the method comprising: statically interacting with a first entire line of one of the sub-beams in the multi-beam to apply a first deflection amount to the paths of the sub-beams in a first direction; and statically interacting with a second entire line of one of the sub-beams in the multi-beam to apply a second deflection amount to the paths of the sub-beams in a second direction, wherein the first direction is opposite to the second direction.

[0168] Although the invention has been described in conjunction with various embodiments, other embodiments of the invention will become apparent to those skilled in the art from consideration of this specification and from the practice of the invention disclosed herein. This specification and examples are intended to be illustrative only, wherein the true scope and spirit of the invention are indicated by the following claims.

[0169] The above description is intended to be illustrative and not restrictive. Therefore, it will be apparent to those skilled in the art that modifications can be made as described without departing from the scope of the patent claims set forth below.

[0170] The configuration is revealed according to the following conditions:

[0171] Clause 1: A multi-beam manipulator device configured to operate along the paths of a plurality of sub-beams in a charged particle multi-beam to deflect the paths of the plurality of sub-beams, wherein the sub-beams are arranged in an array, wherein the sub-beams are arranged in a plurality of lines, the multi-beam manipulator device comprising: an electrode assembly including a plurality of pairs of parallel planar electrode surfaces; wherein:

[0172] One of the first pairs of parallel planar electrode surfaces in the set includes a first planar electrode surface disposed along one side of one of the lines of the sub-beam, and a second planar electrode surface disposed parallel to the first planar electrode surface and along one opposite side of the lines of the sub-beam path;

[0173] One of the second pairs of parallel planar electrode surfaces in the set includes a first planar electrode surface disposed on one side of one of the different lines of the sub-beam path, and a second planar electrode surface disposed on the opposite side of one of the different lines of the sub-beam path, parallel to the first planar electrode surface;

[0174] The first pair of parallel planar electrode surfaces are configured to interact linearly and statically with one of the sub-beams in the multi-beam configuration, such that they can apply a first deflection amount to the path of the sub-beam in a first direction;

[0175] The second pair of parallel planar electrode surfaces are configured to interact linearly and statically with one of the sub-beams in the multi-beam configuration, such that they can apply a second deflection amount to the paths of the sub-beams in a second direction; and

[0176] The first direction is opposite to the second direction.

[0177] Clause 2: The multi-beam manipulator device as in Clause 1, wherein the magnitude of the first deflection is different from the magnitude of the second deflection.

[0178] Clause 3: A multi-beam manipulator device as described in Clause 1 or 2, wherein each pair of parallel planar electrode surfaces in the set is configured to interact linearly and statically with one of the sub-beams in the multi-beam array, thereby applying a deflection to the path of the sub-beams.

[0179] Clause 4: A multi-beam manipulator device as described in any of the preceding clauses, wherein the plurality of pairs of parallel planar electrode surfaces are configured such that they can deflect all of the sub-beam lines in the array, the sub-beam lines being substantially parallel to each other across the array.

[0180] Clause 5: A multi-beam manipulator device as described in any of Clauses 1 to 3, wherein the plurality of pairs of parallel planar electrode surfaces are configured such that they can deflect at least two, but not all, of the sub-beam lines in the array, which are substantially parallel to each other across the array.

[0181] Clause 6: A multi-beam manipulator device as described in any of the preceding clauses, wherein each pair of parallel planar electrode surfaces in the set is configured such that it can deflect only one sub-beamline of the multi-beam.

[0182] Clause 7: A multi-beam manipulator device as described in any of the preceding clauses, wherein all such pairs of parallel planar electrode surfaces are arranged in the same plane, which is substantially orthogonal to the optical axis of the charged particles.

[0183] Clause 8: A multi-beam manipulator device as described in any of the preceding clauses, wherein each pair of parallel planar electrode surfaces is configured to apply an electric field between its first and second planar surfaces to electrostatically deflect all such paths of a sub-beam in a sub-beamline; and the applied electric field is substantially orthogonal to the optical axis of the charged particle.

[0184] Clause 9: A multi-beam manipulator device as described in any of the preceding clauses, wherein, in use, each pair of parallel planar electrode surfaces applies a substantially constant electric field between its first and second planar surfaces to deflect the paths of all such sub-beams in a sub-beamline.

[0185] Clause 10: A multi-beam manipulator device as described in any of the preceding clauses, wherein each pair of parallel planar electrode surfaces is configured to apply an electric field that is different in direction and / or magnitude from the electric fields applied by other pairs of parallel planar electrode surfaces, such that the applied deflection to each sub-beamline in a multi-beam is different in direction and / or magnitude.

[0186] Clause 11: A multi-beam manipulator device as described in any of the preceding clauses, wherein for each of one or more pairs of parallel planar electrode surfaces, the electric field applied by one pair of parallel planar electrode surfaces is equal in magnitude and opposite in direction to the electric field applied by the other pair of parallel planar electrode surfaces.

[0187] Clause 12: A multi-beam manipulator device as described in any of the preceding clauses, wherein, when viewed along the optical axis of the charged particle, the positions of the sub-beams within the multi-beam substantially correspond to the vertices of a substantially square grid, a substantially rhomboid grid, and / or a substantially skewed or displaced square grid.

[0188] Clause 13: A multi-beam manipulator device as described in any of Clauses 1 to 11, wherein, when viewed along the optical axis of the charged particle, the positions of the sub-beams within the multi-beam substantially correspond to the vertices of a substantially hexagonal grid and / or a substantially skewed or displaced hexagonal grid.

[0189] Clause 14: A multi-beam manipulator configuration comprising: a first multi-beam manipulator device as described in any of the preceding clauses; and one or more other multi-beam manipulator devices, wherein each of the one or more other multi-beam manipulator devices is a multi-beam manipulator device as described in any of the preceding clauses; wherein each multi-beam manipulator device is disposed at a different position along the charged particle optical axis of the multi-beam manipulator configuration.

[0190] Clause 15: The multi-beam manipulator configuration as described in Clause 14, wherein the surfaces of the planar electrodes are aligned in the same direction within each multi-beam manipulator device; and in a different direction within each multi-beam manipulator device.

[0191] Clause 16: A multi-beam manipulator configuration as described in Clause 14 or 15, wherein the multi-beam manipulator configuration includes a second multi-beam manipulator device; and the paired planar electrode surfaces in the second multi-beam manipulator device are substantially orthogonal to the first multi-beam manipulator device and aligned with the downstream path.

[0192] Clause 17: A multi-beam manipulator configuration as described in any of Clauses 14 or 15, wherein: the multi-beam manipulator configuration includes a second multi-beam manipulator device; the multi-beam manipulator configuration includes a third multi-beam manipulator device; and the surfaces of the opposing planar electrodes in the first multi-beam manipulator device, the second multi-beam manipulator device, and the third multi-beam manipulator device are each aligned in a different direction.

[0193] Clause 18: The multi-beam manipulator configuration as in Clause 17, wherein the array comprises three distinct sets of lines, each set of lines being aligned in a different direction.

[0194] Clause 19: A multi-beam manipulator configuration as described in any of Clauses 14 to 18, wherein for at least one of the multi-beam manipulator devices, the one or more pairs of parallel electrode surfaces are configured to deflect the path of each sub-beam line such that the path of each sub-beam line intersects with the paths of all other lines of the sub-beams of the downstream beam from the at least one of the multi-beam manipulator devices.

[0195] Clause 20: A charged particle system comprising: a charged particle source configured to emit a beam; a multi-beam generator configured to generate a multi-beam depending on the beam, wherein the multi-beam comprises a plurality of sub-beams; and a multi-beam manipulator device as described in any of Clauses 1 to 13 or a multi-beam manipulator configuration as described in any of Clauses 14 to 19, configured to manipulate the paths of the sub-beams in the multi-beam generated by the multi-beam generator.

[0196] Clause 21: A charged particle system as described in Clause 20, wherein the optical axis of the charged particle is defined as parallel to the average direction of the sub-beams in the multi-beam output from the multi-beam generator.

[0197] Clause 22: A charged particle system as described in Clause 20 or 21, wherein the system further comprises one or more manipulators for each of the sub-beams, the one or more manipulators being used to manipulate the path of the sub-beams such that the paths of the sub-beams can be manipulated individually.

[0198] Clause 23: A charged particle system as described in any of Clauses 20 to 22, wherein the manipulators used to manipulate the sub-beams are configured to substantially collimate the paths of the sub-beams in the multiple beams.

[0199] Clause 24: A system of charged particles as described in any of Clauses 20 to 23, wherein the charged particles are electrons.

[0200] Article 25: An electron beam detection tool comprising a charged particle system as described in any one of Articles 20 to 24.

[0201] Article 26: An electron beam lithography tool comprising a system of charged particles as described in any one of Articles 20 to 24.

[0202] Clause 27: A multi-beam manipulator device configured to operate on a plurality of sub-beam paths in a charged particle multi-beam to deflect the plurality of sub-beam paths, wherein the sub-beams are arranged in an array, wherein the sub-beams are arranged in a series of lines, the multi-beam manipulator device comprising: a plurality of pairs of parallel planar electrode surfaces; wherein:

[0203] A first pair of parallel planar electrode surfaces comprises two opposing parallel planar electrode surfaces arranged along either side of at least one of the lines of the sub-beam;

[0204] A second pair of parallel planar electrode surfaces comprises two opposing parallel planar electrode surfaces arranged along either side of at least one of the lines of the sub-beam;

[0205] The first pair of parallel planar electrode surfaces and the second pair of parallel planar electrode surfaces extend across the multi-beam extension to traverse the array and are configured to electrostatically interact with the individual sub-beam paths in the lines between the paired surfaces during operation.

[0206] Clause 28: A multi-beam manipulator configured to manipulate an array of sub-beam paths of a charged particle multi-beam, the sub-beams being arranged along lines in the array, the lines being in at least two different linear directions, the multi-beam manipulator device comprising: a plurality of deflector devices corresponding to the plurality of linear directions in the array and arranged at different positions along the paths of the multi-beams, wherein each deflector device comprises a plurality of pairs of parallel planar electrode surfaces, the parallel planar electrode surfaces of each deflector device being aligned with a different linear direction, the plurality of pairs of parallel planar electrode surfaces comprising: a first pair of parallel planar electrode surfaces, whose The array comprises two opposing planar parallel electrode surfaces disposed along either side of at least one of the lines of the sub-beams; a second pair of parallel planar electrode surfaces comprising two opposing planar parallel electrode surfaces disposed along either side of at least another of the lines of the sub-beams, the other of the sub-beam lines being parallel to the at least one of the sub-beam lines; and the first pair of parallel planar electrode surfaces and the second pair of parallel planar electrode surfaces traverse the multi-beam extension to cross the array and are configured to electrostatically interact with the respective sub-beam paths in the lines between the paired surfaces during operation.

[0207] Clause 29: A multi-beam manipulator configured to manipulate an array of sub-beam paths of a charged particle multi-beam, the sub-beams being arranged along lines in the array at least two different line directions, the multi-beam manipulator device comprising: a plurality of deflector devices corresponding to the plurality of line directions in the array and positioned along the multi-beam paths, wherein each deflector device comprises a plurality of planar parallel-opposed electrode surfaces, the planar parallel electrode surfaces of each deflector device being aligned with a different line direction, the plurality of pairs of parallel planar electrode surfaces comprising: at least two pairs of opposing parallel planar electrode surfaces, wherein the parallel surfaces of each pair of opposing planes are configured to span the multi-beam array on either side of at least one different line of the sub-beam paths, such that in operation, all the sub-beam paths in the respective at least one line between each pair of opposing parallel planar electrode surfaces and the surfaces interact electrostatically.

[0208] Clause 30: A multi-beam manipulator as described in Clause 29, wherein the multi-beam manipulator is configured to deflect the sub-beams to a focal point.

[0209] Clause 31: A method for deflecting the paths of a plurality of sub-beams in a charged particle multi-beam, wherein the sub-beams are arranged in an array, wherein the sub-beams are arranged in a plurality of lines, the method comprising: statically interacting with a first entire line of one of the sub-beams in the multi-beam to apply a first deflection amount to the paths of the sub-beams in a first direction; and statically interacting with a second entire line of one of the sub-beams in the multi-beam to apply a second deflection amount to the paths of the sub-beams in a second direction, wherein the first direction is opposite to the second direction.

[0210] Clause 32: A method for deflecting the paths of a plurality of sub-beams in a charged particle multi-beam, wherein the sub-beams are arranged in an array, wherein the sub-beams are arranged in a plurality of lines, the lines of the sub-beams being substantially parallel to each other across the array, the method comprising: using a first pair of parallel planar electrode surfaces, comprising a plurality of pairs of parallel planar electrode surfaces, to statically interact with a first entire linear surface of one of the sub-beams in the multi-beam such that a first deflection amount is applied to the paths of the sub-beams in a first direction. The first pair of parallel planar electrode surfaces are configured to deflect all of the sub-beams in the first line of the sub-beams; and using the second pair of parallel planar electrode surfaces of the electrode set, statically interacts with a second entire linear line of one of the sub-beams in the multi-beams such that a second deflection amount is applied to the paths of the sub-beams in a second direction, wherein the first direction is opposite to the second direction, and the second pair of parallel planar electrode surfaces are configured to deflect all of the sub-beams in the second line of the sub-beams.

[0211] Clause 33: wherein the first pair of parallel planar electrode surfaces in the set includes a first planar electrode surface disposed along one side of the first line of the sub-beam, and a second planar electrode surface disposed parallel to the first planar electrode surface and along one opposite side of the first line of the sub-beam.

[0212] Clause 34: wherein the second pair of parallel planar electrode surfaces in the set includes a first planar electrode surface disposed along one side of the second line of the sub-beam, and a second planar electrode surface disposed parallel to the first planar electrode surface and along one opposite side of the second line of the sub-beam.

[0213] 10:Main chamber 20: Loading locking chamber 30: Equipment Front-End Module (EFEM) 30a: First loading port 30b: Second loading port 40: Electron beam tools / equipment 50: Controller 100: Exemplary Charged Particle Beam Detection Equipment 201: Electronic Source 202: Primary Electron Beam 203: Primary Beam Crossover 204: Main electro-optical axis 207: Sample Holder 208: Sample 209: Mobile Platform 210: Condensing Lens 211: Primary Sub-beam 212: Primary Sub-beam 213: Primary Sub-beam 220: Source conversion unit 221: Detecting the light spot 222: Detecting the light spot 223: Detecting the light spot 230: Basic projection equipment 231: Objective lens 232: Deflection Scanning Unit 233: Beam splitter 240: Associated electronic detection device 241: Detection element / detection area 242: Detection element / detection area 243: Detection element / detection area 250: Secondary projection equipment 251: Sub-optical axis 261: Secondary electron beam 262: Secondary electron beam 263: Secondary electron beam 271: Gun Hole Plate 300: Equipment 301: Electronic Source 301S: Genkochi 302: Primary Electron Beam 304: Main electro-optical axis 308: Sample 310: Condensing Lens 311:sub-beam 312: sub-beam 313:sub-beam 320: Source conversion unit 321: Beam confinement aperture array 322: Image forming element array 322_1: Image Forming Micro-Deflector 322_2: Image Forming Micro-Deflector 322_3: Image Forming Micro-Deflector 323: Pre-bent micro-deflector array 323_1: Pre-bending micro-deflector 323_2: Pre-bending micro-deflector 323_3: Pre-bending micro-deflector 324: Aberration Compensator Array 331: Objective lens 372: Pre-beamforming aperture array 391: Detecting the light spot 392: Detection Spot 393: Detecting the light spot 401: sub-beam 402: Electrode 403: Electrode 404: Electrode 501: Electrode support component 502: Electrode support component 503: Electrode support 504: Electrode support 505: Electrode support 506: Electrode support 601: Electrode 602: Electrode 603: Path 901: Location 902: Control Device 903: Location 904: Control Device 905: Location E: Electric field E0: Potential difference E1: Potential difference E2: Potential difference E3: Potential difference E4: Potential difference x: axis / direction / position y: axis / direction / position z: Direction

Claims

1. A manipulator configured to manipulate a plurality of sub-beams of charged particles, wherein the plurality of sub-beams are arranged along a plurality of different lines in a two-dimensional array, the manipulator comprising: a first set of parallel electrodes disposed on either side of a first line of one of the sub-beams in the two-dimensional array and configured to deflect the first line of the sub-beams; and a second set of parallel electrodes disposed on either side of a second line of one of the sub-beams in the two-dimensional array and located downstream of the first set of parallel electrodes, the second set of parallel electrodes configured to deflect the second line of the sub-beams, wherein, when viewed along a charged particle optical axis, the first line of the sub-beams is neither parallel nor perpendicular to the second line of the sub-beams, wherein the first set of parallel electrodes comprises two opposing planar parallel electrode surfaces disposed on either side of the first line of the sub-beams, and wherein, When viewed along the optical axis of the charged particle, the first line of the sub-beam and the second line of the sub-beam are arranged at an angle of 60 degrees.

2. The manipulator as claimed in claim 1, wherein the second set of parallel electrodes comprises two opposing planar parallel electrode surfaces disposed on either side of the second line of the sub-beam.

3. The manipulator as requested in item 1 or 2, wherein the first line of the sub-beam and the second line of the sub-beam share one of the plurality of sub-beams.

4. The manipulator as claimed in claim 1 or 2, further comprising a third set of parallel electrodes disposed on either side of a third line of a sub-beam in the two-dimensional array and downstream of the second set of parallel electrodes, the third set of parallel electrodes being configured to deflect the third line of the sub-beam, wherein the first line of the sub-beam is neither parallel nor perpendicular to the second line of the sub-beam, and the first line of the sub-beam is neither parallel nor perpendicular to the third line of the sub-beam.

5. The manipulator as claimed in claim 4, wherein the first line of the sub-beam, the second line of the sub-beam, and the third line of the sub-beam comprise one of the plurality of sub-beams.

6. The actuator as requested in item 1 or 2, wherein, When viewed along the optical axis of the charged particle, the positions of the plurality of sub-beams in the two-dimensional array substantially correspond to a substantially square grid, a substantially rhomboid grid, and / or a substantially skewed or shifted square grid.

7. The actuator as requested in item 1 or 2, wherein, When viewed along the optical axis of the charged particle, the positions of the plurality of sub-beams in the two-dimensional array substantially correspond to the vertices of a substantially hexagonal grid and / or a substantially skewed or offset hexagonal grid.

8. The actuator as described in claim 7, wherein, When viewed along the optical axis of the charged particle, the positions of the plurality of sub-beams in the two-dimensional array follow a hexagonal close-packed arrangement.

9. The actuator as requested in item 1 or 2, wherein, When viewed along the optical axis of the charged particle, the plurality of sub-beams in the two-dimensional array are aligned with both a line parallel to one of the horizontal axes of the two-dimensional array and a line parallel to one of the vertical axes of the two-dimensional array.

10. The actuator as requested in item 1 or 2, wherein, When viewed along the optical axis of the charged particle, the plurality of sub-beams in the two-dimensional array are aligned with lines diagonally opposite to one of the horizontal and one of the vertical axes of the two-dimensional array.

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