Wafer detection system and method of monitoring the same

Abstract

This disclosure provides a monitoring method for a wafer inspection system. The method includes: capturing an image of a standard wafer exposed to a light source, wherein the image of the standard wafer has a standard brightness range and the light source has a maximum luminous power limit; adjusting the luminous power of the light source when the light source deteriorates to maintain the brightness of the image of the standard wafer within the standard brightness range; and issuing an alert when the luminous power is greater than or equal to a preset value below the maximum limit.

Description

Technical Field

[0001] This disclosure relates to a wafer detection system and its monitoring method. Prior Technology

[0002] Wafer appearance defect inspection instruments can detect wafer-related defects (such as scratches, cracks, missing corners, particles, discoloration, dirt, indentations, etc.) to replace manual identification. However, the quality of wafer images generated by wafer appearance defect inspection instruments has a significant impact on subsequent processes or AI interpretation. Therefore, the stability of the image acquisition device is particularly important.

[0003] Image capturing devices include a camera, a lens, and a light source. Abnormal damage to the camera or lens is more easily detected. On the other hand, light sources can deteriorate (e.g., decay), and it is not easily detected when a light source gradually decays over time.

[0004] Since wafer images captured by wafer appearance defect detection instruments are processed by artificial intelligence, if light source attenuation leads to poor image quality, a large number of wafer images will be distorted. Furthermore, this can easily cause misjudgments in subsequent wafer processing methods, resulting in significant impact.

[0005] Therefore, how to propose a wafer detection system and its monitoring method that can prevent wafer image misjudgment is one of the problems that the industry is eager to invest research and development resources to solve. Summary of the Invention

[0006] In view of this, one of the purposes of this disclosure is to propose a wafer inspection system and its monitoring method that can solve the above problems.

[0007] To achieve the above objectives, according to one embodiment of this disclosure, a monitoring method for a wafer detection system includes: capturing an image of a standard wafer exposed to a light source, wherein the image of the standard wafer has a standard brightness range and the light source has a maximum luminous power limit; adjusting the luminous power of the light source when the light source deteriorates to maintain the brightness of the image of the standard wafer within the standard brightness range; and issuing a warning when the luminous power is greater than or equal to a preset value below the maximum limit.

[0008] In one or more embodiments disclosed herein, adjusting the luminous power of the light source further includes: increasing or decreasing the luminous power to adjust the luminous intensity of the light source when the brightness of the image of the standard wafer is outside the standard brightness range.

[0009] In one or more embodiments disclosed herein, adjusting the luminous power of the light source further includes: increasing the luminous power to increase the luminous intensity of the light source when the brightness of the image of the standard wafer is less than the lower limit of the standard brightness range; and decreasing the luminous power to decrease the luminous intensity of the light source when the brightness of the image of the standard wafer is greater than the upper limit of the standard brightness range.

[0010] In one or more embodiments disclosed herein, the step of capturing an image of a standard wafer exposed to a light source is performed repeatedly and periodically.

[0011] In one or more embodiments disclosed herein, the method further includes the steps of collecting data on the luminous power of the light source and the brightness data of the image of the standard wafer after the step of capturing the image of the standard wafer exposed to the light source.

[0012] In one or more embodiments disclosed herein, the method further includes the step of storing data on the luminous power of the light source and data on the brightness of the image of the standard wafer after the step of collecting data on the luminous power of the light source and data on the brightness of the image of the standard wafer.

[0013] In one or more embodiments disclosed herein, the method further includes the step of analyzing data on the luminous power of the light source and data on the brightness of the image of the standard wafer after the step of collecting data on the luminous power of the light source and data on the brightness of the image of the standard wafer.

[0014] In one or more embodiments disclosed herein, the preset value is 80 percent of the maximum limit of the luminous power of the light source.

[0015] To achieve the above objectives, according to one embodiment of this disclosure, a monitoring method for a wafer detection system includes: capturing several images of several standard wafers exposed to a light source, wherein the images of the standard wafers have a standard brightness range and the light source has a maximum limit of luminous power; analyzing the time-dependent data of the luminous power of the light source to predict the replacement time point; and issuing an alert when the luminous power is greater than or equal to a preset value below the maximum limit.

[0016] In one or more embodiments disclosed herein, the method further includes adjusting the luminous power of the light source to maintain the brightness of each of the images of the standard wafer within a standard brightness range.

[0017] In one or more embodiments disclosed herein, adjusting the luminous power of the light source further includes: increasing or decreasing the luminous power to adjust the luminous intensity of the light source when the brightness of the image of the standard wafer is outside the standard brightness range.

[0018] In one or more embodiments disclosed herein, adjusting the luminous power of the light source further includes: increasing the luminous power to increase the luminous intensity of the light source when the brightness of the image of the standard wafer is less than the lower limit of the standard brightness range; and decreasing the luminous power to decrease the luminous intensity of the light source when the brightness of the image of the standard wafer is greater than the upper limit of the standard brightness range.

[0019] In one or more embodiments disclosed herein, analyzing the time-dependent data of the luminous power of the light source further includes: a time series of the time-dependent data of the luminous power of the light source; and calculating and predicting the replacement time point based on the time series.

[0020] In one or more embodiments disclosed herein, the prediction of replacement time points based on time series calculations is performed by calculating a fitted curve of the time series.

[0021] In one or more embodiments disclosed herein, the predicted replacement time point is earlier than the time point when the luminous power of the light source reaches its maximum limit.

[0022] In one or more embodiments disclosed herein, the method further includes the step of storing time-dependent data of the luminous power of the light source after the step of capturing an image of a standard wafer exposed to the light source.

[0023] To achieve the above objectives, according to one embodiment of this disclosure, a wafer inspection system includes an image capturing device, a light source, and a processing device. The image capturing device is configured to capture an image of a wafer. The image of the wafer has a standard brightness range. The light source is configured to illuminate the wafer. The light source has a maximum luminous power limit. The processing device is electrically or communicatively connected to the light source and the image capturing device. The processing device is configured to: adjust the luminous power of the light source to maintain the brightness of the wafer image within the standard brightness range; and issue a warning when the luminous power is greater than or equal to a preset value below the maximum limit.

[0024] In one or more embodiments disclosed herein, the wafer inspection system further includes an alert unit electrically or communicatively connected to a processing device. The alert unit is configured to perform at least one of the following: sending an abnormality warning message in response to an alert; and sounding an alarm in response to an alert.

[0025] In one or more embodiments disclosed herein, the wafer inspection system further includes a database electrically or communicatively connected to a processing device. The database is configured to store data on the luminous power of the light source and data on the brightness of the wafer image.

[0026] In one or more embodiments disclosed herein, the processing apparatus is further configured to analyze data on the luminous power of the light source and data on the brightness of the image of the wafer.

[0027] In summary, in the wafer inspection system and monitoring method disclosed herein, since the image capturing device repeatedly and periodically captures images of a standard wafer, the luminous power data of the light source can be recorded as a time series. In the wafer inspection system and monitoring method disclosed herein, since the luminous power of the light source is adjusted to maintain the brightness of the standard wafer image within a standard brightness range, the stability and authenticity of each image of the standard wafer can be maintained. In the wafer inspection system and monitoring method disclosed herein, since an alert is issued when the luminous power of the light source is greater than or equal to a preset value, and the preset value is less than the maximum limit of the luminous power of the light source, the processing device can proactively warn the user of the wafer inspection system to replace the light source in a timely manner, thereby avoiding the use of a light source that is no longer suitable for use (e.g., the light source has degraded to the point that it cannot provide sufficient brightness to illuminate the wafer). In the wafer inspection system and monitoring method disclosed herein, since the processing device is configured to analyze the time-dependent data of the luminous power of the light source, the processing device can actively observe the usage and degradation trend of the light source, thereby predicting the replacement time of the light source. Overall, the monitoring method of the wafer inspection system disclosed herein improves the stability of wafer images.

[0028] The above description is only used to illustrate the problem to be solved by this disclosure, the technical means to solve the problem, and the effects produced, etc. The specific details of this disclosure will be described in detail in the following implementation methods and related figures. Simple Explanation of the Diagram

[0029] To make the above and other objects, features, advantages and embodiments of this disclosure more apparent and understandable, the accompanying drawings are described below: Figure 1 is a functional block diagram illustrating a wafer detection system according to one embodiment of the present disclosure. Figure 2 is a flowchart illustrating a method for monitoring a wafer detection system according to one embodiment of this disclosure. Figure 3 is a schematic diagram illustrating an alarm issued when the luminous power is greater than or equal to a preset value below the maximum limit according to an embodiment of the present disclosure. Implementation

[0030] The following disclosure provides numerous different embodiments or implementations for achieving various features of the provided patented subject matter. Specific embodiments of components and configurations are described below to simplify this disclosure. Of course, these are merely embodiments and are not intended to be limiting. For example, in the following description, the formation of a first feature above or on a second feature may include embodiments where the first and second features are in direct contact, and may also include embodiments where an additional feature may be formed between the first and second features, such that the first and second features are not in direct contact. Furthermore, reference numerals and / or letters may be repeated in various embodiments of this disclosure. Such repetition is for simplicity and clarity and does not in itself define the relationship between the various embodiments and / or configurations discussed.

[0031] Furthermore, for ease of description, spatially related terms such as "below," "below," "under," "above," and "above" may be used herein to describe the relationship between one element or feature and another shown in the figures. In addition to the orientations depicted in the figures, spatially related terms are intended to cover different orientations of the device during use or operation. The device may be positioned in other ways (rotated 90 degrees or in other orientations), and the spatial relative terms used herein can be interpreted accordingly.

[0032] As used herein, “approximately,” “about,” “roughly,” or “substantially” generally means within 20%, 10%, or 5% of a given value or range. The values ​​given herein are approximate, meaning that the terms “approximately,” “about,” “roughly,” or “substantially” can be inferred unless explicitly stated otherwise.

[0033] Please refer to Figure 1. Figure 1 is a functional block diagram of a wafer inspection system 100 according to an embodiment of this disclosure. In this embodiment, the wafer inspection system 100 includes an image capturing device 110, a light source 120, an alarm unit 130, a database 140, and a processing device PD. The image capturing device 110, the light source 120, the alarm unit 130, and the database 140 are electrically or communicatively connected to the processing device PD. The image capturing device 110 is configured to capture an image of the wafer. The light source 120 is configured to illuminate the wafer. The alarm unit 130 is configured to send an abnormal warning message. The alarm unit 130 is further configured to sound an alarm. The database 140 is configured to store data on the luminous power of the light source 120 and data on the brightness of the wafer image. The processing device PD is electrically or communicatively connected to the image capturing device 110, the light source 120, the alarm unit 130, and the database 140. The processing device PD is configured to adjust the luminous power of the light source 120 to maintain the brightness of the wafer image within a standard brightness range. The processing device PD is further configured to allow the warning unit 130 to issue an alarm when the luminous power of the light source 120 is greater than or equal to a preset value below the maximum luminous power limit. In some embodiments, the processing device PD is also configured to allow the warning unit 130 to issue an alarm when the luminous power of the light source 120 is greater than or equal to a preset value below the maximum luminous power limit. The processing device PD is further configured to analyze data on the luminous power of the light source 120 and data on the brightness of the wafer image.

[0034] In some embodiments, the wafer may be a standard wafer configured as a standard sample, rather than a wafer product. In some embodiments, the wafer may be a silicon wafer. In some embodiments, it may contain materials such as silicon (Si), polymethyl methacrylate (PMMA), glass, or other similar materials. This disclosure is not intended to limit the materials used in the wafer.

[0035] In some embodiments, the image capturing device 110 may be a camera or any suitable device configured to capture images and record information about the brightness of the images it captures. This disclosure is not intended to limit the type of image capturing device 110.

[0036] In some embodiments, the light source 120 may be a light-emitting diode (LED) or any suitable light source. This disclosure is not intended to limit the type of light source 120.

[0037] In some embodiments, the alert unit 130 may include a sounder, such as a buzzer, siren, speaker, horn, or other similar sounder. In some embodiments, the alert unit 130 may be a display device, such as an LED display, liquid crystal display (LCD), organic light-emitting diode (OLED) display, quantum light-emitting diode (QLED) display, or other similar display device. In some embodiments, the alert unit 130 may send abnormal warning messages in the form of, for example, text messages, push notifications, pop-up windows, projection mapping, augmented reality (AR) projection, virtual reality (VR) projection, etc. In some embodiments, the alert unit 130 may be a combination of a sounder and a display device. This disclosure is not intended to limit the type of alert unit 130.

[0038] Please refer to Figure 2. Figure 2 is a flowchart of a method M for monitoring a wafer inspection system 100 as shown in Figure 1, according to an embodiment of this disclosure. The method M shown in Figure 2 includes steps S201, S202, and S203. For a better understanding of steps S201 and S202, please refer to Figures 1 and 2. For a better understanding of step S203, please refer to Figures 2 and 3.

[0039] The following details steps S201, S202, and S203.

[0040] In step S201, an image of a standard wafer exposed to the light source 120 is captured.

[0041] Please refer to Figures 1 and 2. In this embodiment, the image of the standard wafer is captured by the image capturing device 110. More specifically, the standard wafer is exposed to the light source 120, causing the standard wafer to be illuminated. Then, the image capturing device 110 captures the image of the standard wafer. In some embodiments, the image of the standard wafer has brightness. The image of the standard wafer has a standard brightness range. In some embodiments, if the brightness of the image of the standard wafer is within the standard brightness range, the image of the standard wafer is defined as a valid image.

[0042] In some embodiments, the light source 120 has luminous power. The luminous power of the light source 120 has a maximum limit.

[0043] In some embodiments, step S201 is performed repeatedly and periodically. In some embodiments, the image capturing device 110 captures several images of the standard wafer. In some embodiments, the image capturing device 110 captures images of the standard wafer at a frequency of week, day, hour, minute, second, or other suitable period.

[0044] In some embodiments, method M further includes collecting data on the luminous power of the light source 120 and the brightness data of the image of the standard wafer. In some embodiments, collecting the data on the luminous power of the light source 120 and the brightness data of the image of the standard wafer is performed after step S201. More specifically, the image capturing device 110 captures an image of the standard wafer. Then, the processing device PD collects data on the luminous power of the light source 120 and the brightness data of the image of the standard wafer from the light source 120 and the image capturing device 110, respectively.

[0045] In some embodiments, method M further includes storing data on the luminous power of the light source 120 and data on the brightness of the image of the standard wafer. In some embodiments, storing the data on the luminous power of the light source 120 and data on the brightness of the image of the standard wafer is performed after step S201. In some embodiments, storing the data on the luminous power of the light source 120 and data on the brightness of the image of the standard wafer is performed after collecting the data on the luminous power of the light source 120 and data on the brightness of the image of the standard wafer. More specifically, the processing device PD collects the data on the luminous power of the light source 120 and data on the brightness of the image of the standard wafer. Then, the processing device PD stores the data on the luminous power of the light source 120 and data on the brightness of the image of the standard wafer in the database 140.

[0046] In some embodiments, method M further includes analyzing data on the luminous power of the light source 120 and the brightness data of the standard wafer image. In some embodiments, the analysis of the luminous power of the light source 120 and the brightness data of the standard wafer image is performed after step S201. In some embodiments, the analysis of the luminous power of the light source 120 and the brightness data of the standard wafer image is performed after collecting the luminous power data of the light source 120 and the brightness data of the standard wafer image. More specifically, the database 140 stores the luminous power data of the light source 120 and the brightness data of the standard wafer image. Then, the processing device PD analyzes the luminous power data of the light source 120 and the brightness data of the standard wafer image.

[0047] In some embodiments, the processing device PD analyzes time-dependent data of the luminous power of the light source 120 to predict the replacement time point. In some embodiments, analyzing the time-dependent data of the luminous power of the light source 120 includes generating a time sequence of the time-dependent data of the luminous power of the light source 120. More specifically, the processing device PD analyzes the time-dependent data of the luminous power of the light source 120 and generates a time sequence of the luminous power of the light source 120 plotted as a graph (e.g., a line graph or other similar graph). In some embodiments, analyzing the time-dependent data of the luminous power of the light source 120 further includes calculating a predicted replacement time point based on the time sequence. More specifically, the processing device PD generates a time sequence of the luminous power of the light source 120 and calculates a mathematical function of the fitted curve of the time sequence. In some embodiments, calculating the predicted replacement time point based on the time sequence is performed by calculating the fitted curve of the time sequence. For example, the predicted replacement time point is a solution to the mathematical function of the fitted curve of the time sequence. The predicted replacement time point is defined as the point at which the light source 120 will need to be replaced in the future. In some implementations, the predicted replacement time point is earlier than the point at which the luminous power of the light source 120 reaches its maximum limit.

[0048] In step S202, the light emission power of the light source 120 is adjusted to maintain the brightness of the image of the standard wafer within the standard brightness range.

[0049] Please refer to Figures 1 and 2. In this embodiment, the processing device PD adjusts the luminous power of the light source 120. The luminous power of the light source 120 is adjusted by the processing device PD to maintain the brightness of the image of the standard wafer within the standard brightness range. More specifically, adjusting the luminous power of the light source 120 includes increasing or decreasing the luminous power of the light source 120 when the brightness of the image of the standard wafer is outside the standard brightness range, thereby adjusting the luminous intensity (Luminance) of the light source 120. In some embodiments, the standard brightness range has a lower limit and an upper limit.

[0050] In one application scenario, when the brightness of the image of the standard wafer is less than the lower limit of the standard brightness range, the processing device PD increases the luminous power of the light source 120 to increase the luminous intensity of the light source 120. Conversely, when the brightness of the image of the standard wafer is greater than the upper limit of the standard brightness range, the processing device PD decreases the luminous power of the light source 120 to decrease the luminous intensity of the light source 120.

[0051] In one application scenario, when the brightness of the image of the standard wafer is greater than the lower limit of the standard brightness range but less than the upper limit of the standard brightness range, the processing device PD does not adjust the luminous intensity of the light source 120.

[0052] In some implementations, the light source 120 degrades over time. More specifically, as the light source 120 degrades, its luminous power needs to be adjusted to a greater extent to maintain the luminous intensity at the same level. In a practical scenario, as the light source 120 degrades, even if its luminous power is adjusted to its maximum limit, the brightness of the image on the standard wafer may still be less than the lower limit of the standard brightness range.

[0053] In step S203, an alarm is issued when the luminous power is greater than or equal to a preset value that is lower than the maximum limit.

[0054] Please refer to Figures 2 and 3. Figure 3 is a schematic diagram illustrating an alarm issued according to an embodiment of this disclosure when the luminous power is greater than or equal to a preset value below the maximum limit. In this embodiment, the alarm unit 130 issues an alarm based on the luminous power of the light source 120. In some embodiments, the processing device PD issues an alarm via the alarm unit 130. The processing device PD or the alarm unit 130 issues an alarm when the luminous power is greater than or equal to a preset value. In some embodiments, the preset value is the maximum limit below the luminous power of the light source 120. This ensures that the light source 120 can be replaced before the processing device PD is unable to maintain the brightness of the image of the standard wafer within the standard brightness range.

[0055] As shown in Figure 3, the luminous power of the light source 120 is represented by left and right arrows. As shown in Figure 3, the preset value is below the maximum limit. In this embodiment, the warning is issued when the luminous power of the light source 120 is greater than or equal to the preset value below the maximum limit.

[0056] In some embodiments, the preset value is approximately 80% of the maximum luminous power limit of the light source 120. However, this disclosure is not intended to limit the preset value set relative to the maximum luminous power limit of the light source 120.

[0057] In some embodiments where the preset value is 80% of the maximum limit of the luminous power of the light source 120, when the luminous power of the light source 120 reaches 80% of the maximum limit of the luminous power of the light source 120, the warning unit 130 sends an abnormal warning message in response to the aforementioned warning. In some embodiments where the preset value is 80% of the maximum limit of the luminous power of the light source 120, when the luminous power of the light source 120 reaches 80% of the maximum limit of the luminous power of the light source 120, the warning unit 130 sounds an alarm in response to the aforementioned warning.

[0058] In one application scenario, when a user becomes aware of a warning, they can preemptively shut down the wafer detection system 100 to replace the light source 120 with a new one. This ensures that the light source 120 remains usable at all times, thereby improving the stability and realism of the standard wafer image. Furthermore, users can obtain a longer grace period to wait for the new light source 120 to arrive.

[0059] By performing the method M shown in Figure 2 of this disclosure, wafer images with better stability and realism can be provided.

[0060] From the detailed description of the specific embodiments disclosed above, it is clear that in the wafer inspection system and monitoring method disclosed herein, since the image capturing device repeatedly and periodically captures images of the standard wafer, the luminous power data of the light source can be recorded as a time series. In the wafer inspection system and monitoring method disclosed herein, since the luminous power of the light source is adjusted to maintain the brightness of the standard wafer image within a standard brightness range, the stability and authenticity of each image of the standard wafer can be maintained. In the wafer inspection system and monitoring method disclosed herein, since a warning is issued when the luminous power of the light source is greater than or equal to a preset value, and the preset value is less than the maximum limit of the luminous power of the light source, the processing device can warn the user of the wafer inspection system in advance to replace the light source in a timely manner, thereby avoiding the use of a light source that is no longer suitable for use (e.g., the light source has decayed to the point that it cannot provide sufficient brightness to illuminate the wafer). In the wafer inspection system and monitoring method disclosed herein, since the processing unit is configured to analyze the time-dependent data of the light source's luminous power, the processing unit can actively observe the light source's usage and attenuation trend, thereby predicting the light source's replacement time. Overall, the monitoring method of the wafer inspection system disclosed herein improves the stability of wafer images.

[0061] Although this disclosure has been described in considerable detail with reference to certain embodiments thereof, other embodiments are possible. Therefore, the spirit and scope of the appended claims should not be limited to the description of the embodiments contained herein.

[0062] The foregoing outlines the features of several embodiments, enabling those skilled in the art to better understand the nature of this invention. Those skilled in the art should understand that the foregoing can be readily used as the basis for designs or modifications to achieve other variations without departing from the spirit and scope of this invention, in order to implement the same objectives and / or realize the same advantages of the embodiments described herein. The foregoing should be understood as illustrative of this disclosure, and its scope of protection should be determined by the claims.

[0063] 100: Wafer Inspection System 110: Image capturing device 120: Light source 130: Warning Unit 140: Database PD: Processing device M: Method S201, S202, S203: Steps

[0064] Domestic storage information (please note in order of storage institution, date, and number) none Overseas storage information (please note in the order of storage country, institution, date, and number) none

Claims

1. A monitoring method for a wafer inspection system, comprising: capturing an image of a standard wafer exposed to a light source, wherein the image of the standard wafer has a standard brightness range and the light source has a maximum luminous power; adjusting the luminous power of the light source when the light source deteriorates to maintain the brightness of the image of the standard wafer within the standard brightness range; and issuing a warning when the luminous power is greater than or equal to or lower than a preset value of the maximum limit, wherein the preset value is 80% of the maximum limit of the luminous power of the light source.

2. The method as described in claim 1, wherein adjusting the luminous power of the light source further comprises: increasing or decreasing the luminous power to adjust the luminous intensity of one of the light sources when the brightness of the image of the standard wafer is outside the standard brightness range.

3. The method as described in claim 1, wherein adjusting the luminous power of the light source further comprises: increasing the luminous power to increase the luminous intensity of the light source when the brightness of the image of the standard wafer is less than a lower limit of the standard brightness range; and decreasing the luminous power to decrease the luminous intensity of the light source when the brightness of the image of the standard wafer is greater than an upper limit of the standard brightness range.

4. The method as described in claim 1, wherein the step of capturing the image of the standard wafer exposed to the light source is performed repeatedly and periodically.

5. The method as described in claim 1, further comprising the step of collecting data on the luminous power of the light source and data on the brightness of the image of the standard wafer after the step of capturing the image of the standard wafer exposed to the light source.

6. The method as described in claim 5 further includes the step of storing the data of the luminous power of the light source and the data of the brightness of the image of the standard wafer after the step of collecting the data of the luminous power of the light source and the data of the brightness of the image of the standard wafer.

7. The method as described in claim 5 further includes the step of analyzing the data of the luminous power of the light source and the data of the brightness of the image of the standard wafer after the step of collecting the data of the luminous power of the light source and the data of the brightness of the image of the standard wafer.

8. A monitoring method for a wafer inspection system, comprising: capturing a plurality of images of a plurality of standard wafers exposed to a light source, wherein the images of the standard wafers have a standard brightness range and the light source has a maximum luminous power; analyzing time-dependent data of the luminous power of the light source to predict a replacement time point; and issuing an alert when the luminous power is greater than or equal to or lower than a preset value of the maximum limit, wherein the preset value is 80% of the maximum limit of the luminous power of the light source.

9. The method as described in claim 8 further comprises adjusting the luminous power of the light source to maintain the brightness of each of the images of the standard wafers within the standard brightness range.

10. The method as described in claim 9, wherein adjusting the luminous power of the light source further comprises: increasing or decreasing the luminous power to adjust the luminous intensity of one of the light sources when the brightness of the images of the standard wafers is outside the standard brightness range.

11. The method as described in claim 9, wherein adjusting the luminous power of the light source further comprises: increasing the luminous power to increase the luminous intensity of the light source when the brightness of the images of the standard wafers is less than a lower limit of the standard brightness range; and decreasing the luminous power to decrease the luminous intensity of the light source when the brightness of the images of the standard wafers is greater than an upper limit of the standard brightness range.

12. The method as described in claim 8, wherein the analysis of the time-dependent data of the luminous power of the light source further comprises: generating a time series of the time-dependent data of the luminous power of the light source; and calculating a predicted replacement time point based on the time series.

13. The method as described in claim 12, wherein the calculation of the predicted replacement time point based on the time series is performed by calculating a fitted curve of the time series.

14. The method as described in claim 12, wherein the predicted replacement time point is earlier than the time point at which the luminous power of the light source reaches the maximum limit.

15. The method as described in claim 8 further includes the step of storing the timing data of the luminous power of the light source after the step of capturing the images of the standard wafers exposed to the light source.

16. A wafer inspection system comprising: an image capturing device configured to capture an image of a wafer, wherein the image of the wafer has a standard brightness range; a light source configured to illuminate the wafer, wherein the light source has a maximum luminous power; and a processing device electrically or communicatively connected to the light source and the image capturing device, wherein the processing device is configured to: adjust the luminous power of the light source to maintain the brightness of the image of the wafer within the standard brightness range; and issue an alert when the luminous power is greater than or equal to or lower than a preset value of the maximum limit, wherein the preset value is 80 percent of the maximum limit of the luminous power of the light source.

17. The wafer inspection system as claimed in claim 16 further includes an alert unit electrically or communicatively connected to the processing device, wherein the alert unit is configured to perform at least one of the following: sending an abnormality warning message in response to the alert; and sounding an alarm bell in response to the alert.

18. The wafer detection system of claim 16 further includes a database electrically or communicatively connected to the processing device, wherein the database is configured to store data on the luminous power of the light source and data on the brightness of the image of the wafer.

19. The wafer detection system as claimed in claim 18, wherein the processing device is further configured to analyze the data of the luminous power of the light source and the data of the brightness of the image of the wafer.

Images