Substrate processing method

Abstract

The purpose of this invention is to provide a technique that can effectively reduce the collapse rate of patterns on a substrate. The substrate processing method of this invention includes a holding step, a liquid supply step, a drying liquid supply step, and a drying step. In the holding step, a substrate having a first main surface with a pattern formed and a second main surface opposite to the first main surface is held. In the liquid supply step, a processing liquid is supplied to the first main surface of the substrate. In the drying liquid supply step, after the liquid supply step, at least a portion of the second main surface of the substrate is heated to above the boiling point (bp) of the drying liquid, and the drying liquid is supplied to the first main surface of the substrate at a flow rate below the boiling point (bp) of the drying liquid. In the drying step, after the drying liquid supply step, the substrate is dried.

Description

Technical Field

[0001] This disclosure relates to a substrate processing method. Prior Technology

[0002] Previously, a monolithic substrate processing apparatus for processing substrates has been disclosed (e.g., Patent Document 1). In Patent Document 1, after supplying a cleaning solution to the substrate, the substrate processing apparatus supplies isopropanol, which has a lower surface tension than the cleaning solution, to the substrate, and then dries the substrate. This suppresses the collapse of the substrate pattern during drying. [Previous Technical Documents] [Patent Literature]

[0003] [Patent Document 1] Japanese Patent Application Publication No. 2015-23182 Summary of the Invention

[0004] [The problem the invention aims to solve]

[0005] However, patent document 1 did not examine the temperature of isopropanol. Therefore, it was not possible to effectively reduce the collapse rate of the pattern.

[0006] Therefore, the purpose of this disclosure is to provide a technique that can effectively reduce the collapse rate of patterns on a substrate. [Technical means to solve the problem]

[0007] The first embodiment is a substrate processing method comprising: a holding step, which holds a substrate having a patterned first main surface and a second main surface opposite to the first main surface; a liquid supply step, which supplies a processing liquid to the first main surface of the substrate; a drying liquid supply step, which, after the liquid supply step, heats at least a portion of the second main surface of the substrate to above the boiling point of the drying liquid and supplies the drying liquid to the first main surface of the substrate at a flow rate at which the temperature of the first main surface of the substrate does not reach the boiling point of the drying liquid; and a drying step, which, after the drying liquid supply step, dries the substrate.

[0008] The second state sample is a substrate processing method similar to the first state sample, wherein in the above-mentioned drying liquid supply process, a heat medium with a boiling point above the drying liquid is supplied to the second main surface of the substrate.

[0009] The substrate processing method of the third state sample is the same as that of the first or second state sample, wherein in the above-mentioned drying liquid supply process, the peripheral portion of the second surface of the substrate is heated to above the boiling point of the drying liquid.

[0010] The fourth state sample is a substrate processing method similar to the third state sample, wherein in the above-mentioned drying liquid supply process, the central portion of the second main surface of the substrate is heated to a temperature lower than the temperature of the peripheral portion of the second main surface.

[0011] The fifth state sample is the same as the substrate processing method of the fourth state sample, wherein in the above-mentioned drying liquid supply process, a heat medium with a first medium temperature is supplied to the peripheral portion of the second main surface of the substrate, and a heat medium with a second medium temperature lower than the first medium temperature is supplied to the central portion of the second main surface of the substrate.

[0012] The substrate processing method of the sixth state sample is the same as that of any one of the states 1 to 5, wherein in the above-mentioned drying liquid supply process, the second main surface of the substrate is heated only during a period of time after the drying liquid supply time.

[0013] The substrate processing method of the seventh state sample is the same as that of any one of the states 1 to 6, wherein in the above-mentioned drying liquid supply process, the temperature of the first main surface of the substrate is above 60 degrees Celsius and does not reach the boiling point of the above-mentioned drying liquid. [Effects of the Invention]

[0014] According to the first sample, in the drying liquid supply process, at least a portion of the second main surface of the substrate is heated above the boiling point of the drying liquid, and the drying liquid is supplied at a flow rate below the boiling point of the first main surface of the substrate. Therefore, the temperature of the first main surface of the substrate is closer to the boiling point of the drying liquid, and boiling of the drying liquid can be more effectively suppressed, as can the adhesion of particles. Furthermore, because the temperature of the first main surface is close to the boiling point, the drying liquid can evaporate in a shorter time during subsequent drying processes under lower surface tension. Therefore, the pattern collapse rate can be effectively reduced.

[0015] According to the second state sample, it can be simply configured such that the temperature of at least a portion of the second main surface of the substrate is set above the boiling point of the drying liquid.

[0016] According to the third state sample, the collapse rate of the pattern in the peripheral area can be reduced. The collapse rate of the pattern in the peripheral area tends to be higher than that of the pattern in the central area, thus reducing the collapse rate of the pattern in the entire first main surface of the substrate.

[0017] According to the fourth state, power consumption can be reduced and the collapse rate of the pattern in the central part of the first main surface of the substrate can be reduced, thereby further reducing the collapse rate of the overall pattern.

[0018] Based on the fifth state, a simple configuration can be used to effectively reduce the collapse rate of the pattern throughout the first main surface of the substrate.

[0019] According to the sixth state, power consumption can be reduced.

[0020] According to the 7th state, the collapse rate of the pattern can be effectively reduced. Simple Explanation of the Diagram

[0021] Figure 1 is a top view of one example of the configuration of a schematic display substrate processing device. Figure 2 is a block diagram illustrating one example of the internal structure of a schematic display control unit. Figure 3 is a longitudinal sectional view schematically showing an example of the configuration of the processing unit in the first embodiment. Figure 4 is a flowchart showing one example of the actions of the processing unit. Figure 5 is a schematic diagram showing one example of the status of the processing unit in the desiccant supply process. Figure 6 is a timing diagram of the pattern display processing unit, an example of the time-varying temperature of the thermal medium and the time-varying temperature of the first main surface of the substrate. Figure 7 is a schematic diagram showing the first example of the substrate heating section in the second embodiment. Figure 8 is a schematic diagram showing the first example of a portion of the processing unit in the second embodiment. Figure 9 is a schematic diagram showing a second example of the substrate heating section in the second embodiment. Figure 10 is a schematic diagram showing a second example of a portion of the processing unit in the second embodiment. Figure 11 is a schematic diagram showing an example of the timing diagram of the processing unit in the third implementation. Figure 12 is a flowchart showing the first example of the operation of the processing unit in the fourth embodiment. Figure 13 is a flowchart showing the second example of the operation of the processing unit in the fourth implementation. Figure 14 is a schematic diagram showing one example of the configuration of the processing unit in the fifth embodiment. Implementation

[0022] The following description, with reference to the drawings, details the implementation. In the drawings, for ease of understanding, the dimensions or quantity of each part are exaggerated or simplified as needed. Furthermore, parts with the same structure and function are labeled with the same symbols, and repeated explanations are omitted in the following description.

[0023] Furthermore, in the following description, the same symbols are used to label the same constituent elements and to illustrate them, and their names and functions are also set to be the same. Therefore, there are cases where detailed descriptions of these elements are omitted to avoid repetition.

[0024] Furthermore, in the following description, even if there are instances of using serial numbers such as "1st" or "2nd", such terms are used for the purpose of facilitating understanding of the content of the implementation form and are not limited to the order that can be generated by such serial numbers.

[0025] When using expressions indicating relative or absolute positional relationships (e.g., "in one direction," "along one direction," "parallel," "orthogonal," "center," "concentric," "coaxial," etc.), unless otherwise specified, such expressions are intended to not only strictly represent the positional relationship but also indicate a relative displacement in angle or distance within the tolerance range or to achieve the same level of functionality. When using expressions indicating equal states (e.g., "same," "equal," "homogeneous," etc.), unless otherwise specified, such expressions are intended to not only indicate a quantitatively and strictly equal state but also a state where there is a difference in tolerance or to achieve the same level of functionality. When using expressions indicating shapes (e.g., "quadrilateral shape" or "cylindrical shape," unless otherwise specified, such expressions are intended to not only strictly represent the shape geometrically but also indicate a shape with features such as concavity, convexity, or chamfering within the range to achieve the same level of effect. When a representation uses "possessing," "containing," "complete," "including," or "having" a constituent element, the representation is not an exclusive representation that excludes the existence of other constituent elements. When a representation uses "at least one of A, B, and C," the representation includes only A, only B, only C, any two of A, B, and C, and all of A, B, and C.

[0026] <First Implementation Form> <Overall Composition of the Substrate Processing Device> Figure 1 is a top view of one example of the configuration of a schematic display substrate processing apparatus 100. The substrate processing apparatus 100 is a monolithic processing apparatus that processes substrates W one by one.

[0027] The substrate W is, for example, a semiconductor wafer, a substrate for a liquid crystal display, a substrate for an organic EL (Electroluminescence) display, a substrate for an FPD (Flat Panel Display), a substrate for an optical display, a substrate for a magnetic disk, a substrate for an optical disk, a substrate for a magneto-optical disk, a substrate for a photomask, or a substrate for a solar cell. The substrate W has a relatively thin flat plate shape having a first main surface Wa and a second main surface Wb. The second main surface Wb is the side opposite to the first main surface Wa. Hereinafter, the substrate W is a semiconductor wafer. The substrate W has, for example, a circular plate shape. The diameter of the substrate W is, for example, about 300 mm, and the thickness of the substrate W is, for example, about 0.5 mm or more and about 3 mm or less. A pattern is formed on the main surface of the substrate W. The pattern referred to herein includes, for example, at least one of a wiring pattern, an electrode pattern, a semiconductor pattern, and an insulating pattern. The aspect ratio of the pattern is, for example, 5 or more and 500 or less. The pattern width is, for example, 3 nm or more and 50 nm or less. Such high aspect ratio patterns are prone to collapse.

[0028] In the example of Figure 1, the substrate processing apparatus 100 includes a transport block 110, a processing block 120, and a control unit 90. The processing block 120 is the part that mainly processes the substrate W, and the transport block 110 is the part that mainly transports the substrate W between the outside of the substrate processing apparatus 100 and the processing block 120.

[0029] The transport block 110 includes a loading port 111 and a first transport section 112. A substrate receiver (hereinafter referred to as a carrier) C, which is transported in from the outside, is placed in the loading port 111. A plurality of substrates W are arranged, for example, with gaps between them in the vertical direction, and are stored in the carrier C. In the example of FIG1, a plurality of loading ports 111 are arranged.

[0030] The first transport unit 112 is a transport robot that can retrieve unprocessed substrates W from the carriers C placed in each loading port 111. The first transport unit 112 can also be called a transfer robot. The first transport unit 112 transports the unprocessed substrates W retrieved from the carriers C to the processing block 120. The processing block 120 can process the unprocessed substrates W. Furthermore, the first transport unit 112 can receive processed substrates W from the processing block 120 and transport the processed substrates W to the carriers C in the loading ports 111.

[0031] In the example of Figure 1, processing block 120 includes a plurality of processing units 1 and a second conveying unit 122. The second conveying unit 122 is a conveying robot that can transport substrates W between the first conveying unit 112 and the plurality of processing units 1. In the example of Figure 1, processing block 120 also includes a placement unit 123. The placement unit 123 is, for example, a rack that can place a plurality of substrates W in a vertically arranged state. The first conveying unit 112 places unprocessed substrates W on the placement unit 123. The second conveying unit 122 removes unprocessed substrates W from the placement unit 123 and conveys the substrates W to the processing units 1. The processing units 1 process the substrates W. The configuration of the processing unit 1 will be described later. The second conveying unit 122 removes processed substrates W from the processing units 1 and conveys the substrates W to the placement unit 123. The first conveying unit 112 takes out the substrate W from the placement unit 123 and conveys the substrate W to the carrier C of the loading port 111.

[0032] In the example of Figure 1, a plurality of processing units 1 (e.g., 4) are arranged to surround the second conveying unit 122 in a top view. The second conveying unit 122 can also be referred to as the central robot. At various locations in the top view, the plurality of processing units 1 can be stacked in the vertical direction. That is, a plurality of towers TW (4 in the figure) formed by the plurality of processing units 1 stacked in the vertical direction can be arranged to surround the second conveying unit 122.

[0033] The control unit 90 provides overall control over the board processing apparatus 100. Specifically, the control unit 90 controls the first transport unit 112, the second transport unit 122, and the processing unit 1. Figure 2 is a block diagram schematically showing an example of the internal structure of the control unit 90. The control unit 90 is an electronic circuit, having, for example, a data processing unit 91 and a memory unit 92. In the specific example of Figure 2, the data processing unit 91 and the memory unit 92 are interconnected via a bus 93. The data processing unit 91 may be, for example, an arithmetic processing device such as a CPU (Central Processing Unit). The memory unit 92 may have a non-temporary memory unit (e.g., ROM (Read Only Memory)) 921 and a temporary memory unit (e.g., RAM (Random Access Memory)) 922. The non-temporary memory unit 921 may store, for example, a program that specifies the processing to be executed by the control unit 90. The control unit 90 can execute the processing specified by the program by executing the data processing unit 91. Of course, some or all of the processing executed by the control unit 90 can be executed by dedicated logic circuits or other hardware.

[0034] <Summary of Processing Unit> Figure 3 is a longitudinal sectional view schematically showing an example of the configuration of the processing unit 1 in the first embodiment. Furthermore, not all processing units 1 belonging to the substrate processing apparatus 100 need to have the configuration illustrated in Figure 3. It is sufficient that at least one processing unit 1 of the substrate processing apparatus 100 has the configuration illustrated in Figure 3.

[0035] The processing unit 1 includes a substrate holding part 2, an ejection part 3, and a substrate heating part 4.

[0036] In the example shown in Figure 3, a chamber 10 is also provided in the processing unit 1. The chamber 10 has a box-shaped form, and its internal space corresponds to the processing space of the substrate W. An openable loading and unloading outlet (not shown) is provided in the chamber 10. The second conveying unit 122 moves the unprocessed substrate W into the chamber 10 through the loading and unloading outlet, and moves the processed substrate W out of the chamber 10 through the loading and unloading outlet.

[0037] In the example shown in Figure 3, a fan filter unit 11 is installed in the top plate of the chamber 10. The fan filter unit 11 extracts air from outside the chamber 10, purifies it, and then delivers the purified air into the interior of the chamber 10. The operation of the fan filter unit 11 creates a downward flow of clean air within the chamber 10. In the example shown in Figure 3, the upstream end of an exhaust pipe 13 is connected to the lower part of the side wall of the chamber 10. The gas inside the chamber 10 is discharged to the outside through the exhaust pipe 13.

[0038] A substrate holding part 2 is disposed within the chamber 10, holding the substrate W in a horizontal position and causing the substrate W to rotate about the rotation axis Q1. The horizontal position referred to here means that the thickness direction of the substrate W is along the vertical direction. The rotation axis Q1 is an axis passing through the center of the substrate W and along the vertical direction. This substrate holding part 2 can also be called a rotating clamp.

[0039] Here, the first main surface Wa of the patterned substrate W faces vertically upward. That is, in the example of FIG3, the first main surface Wa of the substrate W held by the substrate holding portion 2 corresponds to the upper surface. The pattern includes, for example, at least one of wiring patterns, insulating patterns, and semiconductor patterns.

[0040] In the example of Figure 3, the substrate holding part 2 includes a rotating base 21, clamping pins 22, and a rotation drive part 23. The rotating base 21 has a plate-like shape (e.g., a circular plate shape) and is arranged with its thickness direction along the vertical direction. A plurality of clamping pins 22 are provided on the upper surface of the rotating base 21. The plurality of clamping pins 22 are arranged at equal intervals along the circumferential direction related to the rotation axis Q1. The plurality of clamping pins 22 are configured to be movable between a holding position and a releasing position, which will be described below. The holding position is the position where the clamping pins 22 abut against the periphery of the substrate W. The plurality of clamping pins 22 stop at their respective holding positions, thereby holding the substrate W by the plurality of clamping pins 22. In Figure 3, the clamping pins 22 stopped at the holding position are shown. The releasing position is the position where each clamping pin 22 is away from the substrate W. The plurality of clamping pins 22 stop at their respective releasing positions, thereby releasing the holding of the substrate W by the plurality of clamping pins 22. The substrate holding part 2 also includes a pin drive part (not shown) that moves the clamp pin 22. The pin drive part includes, for example, a drive source such as a motor and a cylinder, and is controlled by the control part 90.

[0041] The rotary drive unit 23 includes a shaft 231 and a motor 232. The upper end of the shaft 231 is connected to the lower surface of the rotating base 21, and the shaft 231 extends from the lower surface of the rotating base 21 along the rotation axis Q1. The motor 232 is controlled by the control unit 90 to rotate the shaft 231 about the rotation axis Q1. Thereby, the rotating base 21, the clamping pin 22, and the base plate W rotate as a whole about the rotation axis Q1.

[0042] Additionally, the substrate holding section 2 may not have a clamping pin 22. For example, the substrate holding section 2 can hold the substrate W by means of clamping methods such as vacuum clamps, electrostatic clamps, and Bernoulli clamps.

[0043] The ejection section 3 ejects a processing liquid onto the first main surface Wa of the substrate W held by the substrate holding section 2. As shown in FIG3, the ejection section 3 includes at least one nozzle 30. The nozzle 30 ejects the processing liquid onto the first main surface Wa of the substrate W held by the substrate holding section 2. Here, since the first main surface Wa corresponds to the upper surface of the substrate W, the nozzle 30 is positioned vertically above the substrate W held by the substrate holding section 2. The nozzle 30 is, for example, a linear nozzle that ejects the processing liquid in a continuous flow state.

[0044] In the example of Figure 3, nozzles 30c, 30w, and 30i are shown as nozzle 30. In the example of Figure 3, nozzles 30c, 30w, and 30i extend vertically. In the example of Figure 3, an outlet 3c is formed on the lower surface of nozzle 30c, an outlet 3w is formed on the lower surface of nozzle 30w, and an outlet 3i is formed on the lower surface of nozzle 30i. Nozzle 30c sprays a medicinal liquid from outlet 3c, nozzle 30w sprays a cleaning liquid from outlet 3w, and nozzle 30i sprays a drying liquid from outlet 3i. The medicinal liquid, cleaning liquid, and drying liquid are all examples of treatment liquids, and specific examples will be described later.

[0045] Nozzles 30c, 30w, and 30i spray processing liquid onto the center of the first main surface Wa of the substrate W held by the substrate holding portion 2. In the example of Figure 3, nozzles 30c, 30w, and 30i are adjacent to and fixed to each other in the horizontal direction. In the example of Figure 3, nozzles 30c, 30w, and 30i are disposed inside the opposing member 60. The opposing member 60 has, for example, a cylindrical shape. The opposing member 60 has a hollow shape, with its lower port opening on the lower surface of the opposing member 60. Nozzles 30c, 30w, and 30i are disposed within the hollow portion of the opposing member 60, and the processing liquid sprayed from each nozzle 30 flows out from the lower port of the opposing member 60. In the example of Figure 3, the opposing member 60 is positioned in the vertical direction opposite to the center of the substrate W held by the substrate holding portion 2.

[0046] Nozzle 30 is connected to the downstream end of supply pipe 31, and the upstream end of supply pipe 31 is connected to the treatment fluid supply source. In the example of Figure 3, supply pipes 31c, 31w and 31i are shown as supply pipe 31.

[0047] The downstream end of the supply pipe 31c is connected to the nozzle 30c, and the upstream end of the supply pipe 31c is connected to the liquid supply source. The liquid supply source has a tank (not shown) for storing the liquid and supplies the liquid to the upstream end of the supply pipe 31c. Examples of liquids that can be used include fluoronitric acid (obtained by mixing fluoric acid, nitric acid, and water), a fluoroacid-hydrogen peroxide aqueous solution (FPM) (obtained by mixing fluoric acid, hydrogen peroxide, and water), tetramethylammonium hydroxide (TMAH), a mixture of sulfuric acid and hydrogen peroxide (SPM), ammonia, a mixture of ammonia, hydrogen peroxide, and water (SC-1), and a mixture of hydrogen chloride, hydrogen peroxide, and water (SC-2). Alternatively, the liquid can be a single liquid, not a mixture. For example, single liquids such as fluoric acid (HF), hydrogen peroxide, and sulfuric acid can be used.

[0048] The downstream end of the supply pipe 31w is connected to the nozzle 30w, and the upstream end of the supply pipe 31w is connected to the cleaning fluid supply source. The cleaning fluid supply source has a tank (not shown) for storing cleaning fluid and supplies cleaning fluid to the upstream end of the supply pipe 31w. For example, pure water, carbon dioxide water, or ozone water can be used as the cleaning fluid.

[0049] The downstream end of the supply pipe 31i is connected to the nozzle 31i, and the upstream end of the supply pipe 31i is connected to the desiccant supply source. The desiccant supply source has a tank (not shown) for storing desiccant and supplies desiccant to the upstream end of the supply pipe 31i. For example, an organic solvent such as isopropanol can be used as the desiccant. The surface tension of the desiccant is lower than that of other processing liquids (e.g., both the surface tension of liquids and the surface tension of cleaning liquids). Furthermore, the volatility of the desiccant is higher than that of other processing liquids (e.g., both the volatility of pharmaceutical solutions and the volatility of cleaning liquids).

[0050] A supply valve 32 and a flow regulating valve 33 are inserted into the supply pipe 31. In the example of Figure 3, a supply valve 32c and a flow regulating valve 33c are inserted into the supply pipe 31c, a supply valve 32w and a flow regulating valve 33w are inserted into the supply pipe 31w, and a supply valve 32i and a flow regulating valve 33i are inserted into the supply pipe 31i. The supply valve 32 switches the supply pipe 31. The flow regulating valve 33 adjusts the flow rate of the processed liquid flowing in the supply pipe 31. The flow regulating valve 33 can be a mass flow controller. The supply valve 32 and the flow regulating valve 33 are controlled by the control unit 90.

[0051] The ejection section 3 ejects various processing liquids onto the first main surface Wa of the substrate W in the order described below. In this way, the processing unit 1 can sequentially perform various processing on the first main surface Wa of the substrate W, corresponding to the type of processing liquid. Specific processing methods will be described later.

[0052] In the example of Figure 3, the opposing member 60 is configured to eject gas onto the first main surface Wa of the substrate W held by the substrate holding portion 2. In the example of Figure 3, the space in the hollow portion of the opposing member 60, excluding the nozzle 30, functions as a gas flow path 30g. The lower port of the lower surface of the opposing member 60 corresponds to the outlet of the gas flow path 30g.

[0053] In the example of Figure 3, the upper part of the opposing member 60 is connected to the downstream end of the supply pipe 31g. That is, the downstream end of the supply pipe 31g is connected to the gas flow path 30g. The upstream end of the supply pipe 31g is connected to a gas supply source. The gas supply source has a storage section (not shown) for storing inert gas, and supplies inert gas to the upstream end of the supply pipe 31g. The inert gas includes, for example, at least one of nitrogen and rare gases. Rare gases include, for example, argon.

[0054] A supply valve 32g, a flow regulating valve 33g, and a heater 34g are provided in the supply pipe 31g. The supply valve 32g switches the supply pipe 31g on and off. The flow regulating valve 33g regulates the flow rate of the inert gas flowing in the supply pipe 31g. The heater 34g heats the inert gas flowing in the supply pipe 31g. The heater 34g can be, for example, a resistance heater with an electric heating wire. The supply valve 32g, the flow regulating valve 33g, and the heater 34g are controlled by a control unit 90.

[0055] When the supply valve 32g is opened and the heater 34g is activated, high-temperature inert gas is ejected from the center of the lower surface of the opposing member 60 (i.e., the lower port of the gas flow path 30g) to the center of the first main surface Wa of the substrate W. This promotes the drying of the substrate W.

[0056] In the example of Figure 3, a movement drive unit 35 is provided in the processing unit 1. The movement drive unit 35 moves the nozzle, which includes nozzles 30c, 30w, 30i, and the opposing member 60, as a whole. Specifically, the movement drive unit 35 moves the nozzle between the processing position and the standby position, which will be described later. The processing position is the position where nozzles 30c, 30w, and 30i spray processing liquid toward the first main surface Wa of the substrate W, that is, for example, the position facing the center of the first main surface Wa of the substrate W in the vertical direction. The processing position is also the position where the opposing member 60 sprays inert gas toward the first main surface Wa of the substrate W. The nozzle stopped at the processing position is shown in the example of Figure 3. The standby position is the position where nozzles 30c, 30w, and 30i do not spray processing liquid toward the first main surface Wa of the substrate W, that is, for example, the position further radially outward than the substrate holding part 2. The standby position is also the position where the opposing component 60 does not eject inert gas to the first main surface Wa of the substrate W.

[0057] Figure 3 shows an example of the specific configuration of the motion drive unit 35. In the example of Figure 3, the motion drive unit 35 includes an arm 351, a support column 352, and a drive source 353. The support column 352 is located radially outward from the protective member 7 described later and extends vertically. The arm 351 extends horizontally, with its front end connected to the nozzle and its base end connected to the support column 352. The drive source 353 is controlled by the control unit 90 to rotate the support column 352 about its central axis Q2 in both forward and reverse directions within a predetermined angle range. The drive source 353 includes, for example, a motor. When the support column 352 rotates about the central axis Q2 in both forward and reverse directions within the predetermined angle range, the nozzle reciprocates circumferentially relative to the central axis Q2. The support column 352 is arranged such that the processing position and the standby position are located on the movement trajectory of the nozzle. Furthermore, the motion drive unit 35 is not necessarily limited to the configuration shown in Figure 3 and may also include, for example, a linear motor or other linear motion mechanism.

[0058] The substrate heating section 4 heats the second main surface Wb of the substrate W held by the substrate holding section 2. In the example of FIG3, the substrate heating section 4 is positioned facing the second main surface Wb of the substrate W in the vertical direction. In the example of FIG3, since the second main surface Wb of the substrate W is equivalent to the lower surface, the substrate heating section 4 is positioned directly below the substrate W. The substrate heating section 4 heats at least a portion of the second main surface Wb of the substrate W to above the boiling point of the drying liquid. The technical significance of this will be described later.

[0059] In the example of Figure 3, the substrate heating section 4 includes a nozzle 40. The nozzle 40 ejects a heat medium onto the second main surface Wb of the substrate W. In the example of Figure 3, since the second main surface Wb of the substrate W corresponds to the lower surface, the nozzle 40 can also be called the lower surface nozzle. In the example of Figure 3, a through hole is formed in the center of the rotating base 21 of the substrate holding section 2, and the shaft 231 is a hollow shaft. The through hole of the rotating base 21 and the hollow portion of the shaft 231 are connected in the vertical direction. A portion of the nozzle 40 is disposed in the through hole. An outlet is formed on the upper surface of the nozzle 40, and the outlet of the nozzle 40 faces the center of the second main surface Wb of the substrate W in the vertical direction. The nozzle 40 ejects a heat medium onto the center of the second main surface Wb of the substrate W.

[0060] The nozzle 40 is connected to the downstream end of the supply pipe 41. The supply pipe 41 extends inside the shaft 231 and passes through the shaft 231. The upstream end of the supply pipe 41 is connected to a heat medium supply source. The heat medium is a fluid (gas or liquid), and more specifically, a liquid such as water. The heat medium supply source has, for example, a tank (not shown) for storing the heat medium, and supplies the heat medium to the upstream end of the supply pipe 41.

[0061] In the example shown in Figure 3, a supply valve 42, a flow regulating valve 43, and a heater 44 are provided in the supply pipe 41. The supply valve 42 switches the supply pipe 41. The flow regulating valve 43 adjusts the flow rate of the heat medium flowing in the supply pipe 41. The flow regulating valve 43 can be a mass flow controller. The heater 44 heats the heat medium flowing in the supply pipe 41. The heater 44 can be, for example, a resistance heater with heating wires. The supply valve 42, the flow regulating valve 43, and the heater 44 are controlled by the control unit 90.

[0062] When the supply valve 42 is open and the heater 44 is activated, the high-temperature heat medium is ejected from the nozzle 40 to the center of the second main surface Wb of the substrate W. The heat medium, which is liquid in the center of the second main surface Wb of the substrate W, is subjected to centrifugal force accompanying the rotation of the substrate W, flowing radially outward along the second main surface Wb and dispersing outward from the periphery of the substrate W. As the high-temperature heat medium flows along the second main surface Wb of the substrate W, heat moves from the heat medium to the substrate W, thereby heating the substrate W.

[0063] In the example shown in Figure 3, a protective member 7 and a protective member lifting drive unit 71 are provided in the processing unit 1. The protective member 7 has a cylindrical shape with the rotation axis Q1 as the central axis, surrounding the substrate holding part 2. The protective member 7 can catch the processing liquid and heat medium splashed from the periphery of the substrate W. The protective member lifting drive unit 71 causes the protective member 7 to move up and down between the upper position and the lower position, which will be described below. The upper position is when the upper end of the protective member 7 is positioned higher vertically than the substrate W held by the substrate holding part 2. When the protective member 7 is in the upper position, it can catch the processing liquid and heat medium splashed from the periphery of the substrate W. The lower position is a position lower than the upper position, that is, for example, when the upper end of the protective member 7 is positioned lower vertically than the upper surface of the rotating base 21.

[0064] In the example of Figure 3, a plurality of protective members 7 are provided. The plurality of protective members 7 are arranged concentrically. The plurality of protective members 7 can be used separately depending on the type of treatment liquid. In the example of Figure 3, a cup 72 corresponding to each protective member 7 is provided. The cup 72 has an annular (e.g., circular) recess (groove) surrounding the rotation axis Q1. Each cup 72 catches the treatment liquid flowing down the inner circumferential surface of the corresponding protective member 7. At, for example, the bottom of each cup 72, the upstream end of a discharge pipe 12 is connected. The treatment liquid caught by each cup 72 is discharged to the outside of the treatment unit 1 through the discharge pipe 12.

[0065] <An example of the operation of a substrate processing device> Next, an example of the operation of processing unit 1 will be described. Figure 4 is a flowchart showing an example of the operation of processing unit 1. The control unit 90 causes processing unit 1 to perform steps S1 to S7 according to a preset processing sequence (formula). Figure 5 is a diagram that schematically shows an example of the status of processing unit 1 in the drying liquid supply process described later.

[0066] First, the second conveying unit 122 conveys the substrate W to the processing unit 1. The substrate holding unit 2 then holds the substrate W received from the second conveying unit 122 (step S1: holding process). Specifically, the substrate holding unit 2 moves a plurality of clamping pins 22 from their respective release positions to holding positions. In this way, the plurality of clamping pins 22 hold the substrate W. The substrate holding unit 2 continues to hold the substrate W until the processing of the substrate W is completed.

[0067] Next, the substrate holding section 2 begins to rotate the substrate W (step S2: rotation start process). The substrate holding section 2 may continue to rotate relative to the substrate W until the processing of the substrate W is completed.

[0068] Next, the processing unit 1 supplies the chemical solution to the first main surface Wa of the substrate W (step S3: chemical solution process). First, the movement drive unit 35 moves the nozzle to the processing position. Then, the protective member lifting drive unit 71 raises the protective member 7 for the chemical solution to the upper position. At the same time, the control unit 90 opens the supply valve 32c. That is, the control unit 90 switches the supply valve 32c from the closed state to the open state. Hereby, the chemical solution is sprayed from the nozzle 30c onto the first main surface Wa of the rotating substrate W. The chemical solution adhering to the first main surface Wa of the substrate W is subjected to centrifugal force accompanying the rotation of the substrate W and flows radially outward, scattering from the periphery of the substrate W. At this time, by the chemical solution acting on the first main surface Wa of the substrate W, the first main surface Wa of the substrate W is treated with a chemical solution corresponding to the type of chemical solution. For example, the processing unit 1 performs a cleaning process to remove impurities from the first main surface Wa of the substrate W, or an etching process to etch a specified film on the first main surface Wa of the substrate W. The liquid medicine that splashes from the periphery of the substrate W is caught by the protective member 7 and discharged to the outside of the chamber 10 through the discharge pipe 12.

[0069] When the substrate W has been sufficiently processed, the control unit 90 closes the supply valve 32c. As a specific example, the control unit 90 measures the time elapsed since the start of the liquid injection and determines whether this elapsed time exceeds a predetermined liquid injection time. The liquid injection time is preset to the time required for sufficient liquid treatment. The elapsed time is measured, for example, by a timer circuit (not shown) belonging to the control unit 90. When the elapsed time exceeds the liquid injection time, the control unit 90 switches the supply valve 32c from the open state to the closed state.

[0070] Next, the processing unit 1 supplies cleaning fluid to the first main surface Wa of the substrate W (step S4: cleaning process). When the protective member 7 for the cleaning fluid is different from the protective member 7 for the chemical solution, the protective member lifting drive unit 71 appropriately raises and lowers the protective member 7, placing the protective member 7 for the cleaning fluid in the upper position. Meanwhile, the control unit 90 opens the supply valve 32w. That is, the control unit 90 switches the supply valve 32w from the closed state to the open state. Here, cleaning fluid is sprayed from the nozzle 30w onto the first main surface Wa of the rotating substrate W. The cleaning fluid adhering to the first main surface Wa of the substrate W is subjected to centrifugal force accompanying the rotation of the substrate W and flows radially outward and disperses from the periphery of the substrate W. At this time, the cleaning fluid washes the chemical solution on the first main surface Wa of the substrate W to the radially outward. Here, the treatment fluid on the first main surface Wa of the substrate W is replaced by cleaning fluid instead of chemical solution. The processing liquid that splashes from the periphery of the substrate W is caught by the protective member 7 and discharged to the outside of the chamber 10 through the discharge pipe 12.

[0071] When the chemical solution has been fully replaced by the cleaning fluid, the control unit 90 closes the supply valve 32w. As a specific example, the control unit 90 measures the time elapsed since the cleaning fluid begins to spray, and if this elapsed time exceeds a predetermined cleaning time, it switches the supply valve 32w from the open state to the closed state. The cleaning time is preset to the time required for sufficient replacement of the chemical solution with the cleaning fluid.

[0072] Next, the processing unit 1 supplies drying fluid to the first main surface Wa of the substrate W (step S5: drying fluid supply process). When the protective member 7 for the drying fluid is different from the protective member 7 for the cleaning fluid, the protective member lifting drive unit 71 appropriately raises and lowers the protective member 7, and raises the protective member 7 for the drying fluid to the upper position. Furthermore, the control unit 90 opens the supply valve 32i. That is, the control unit 90 switches the supply valve 32i from the closed state to the open state.

[0073] As shown in Figure 5, when the supply valve 32i is opened, the drying liquid is sprayed from the nozzle 30i's outlet 3i onto the first main surface Wa of the rotating substrate W. The temperature of the drying liquid can be, for example, room temperature (e.g., around 25 degrees Celsius). The temperature of the drying liquid mentioned here refers, for example, to the temperature of the drying liquid in the outlet 3i. Furthermore, the room temperature mentioned here includes, for example, the temperature of the drying liquid upstream of the outlet 3i where a heater for heating the drying liquid is not installed, or when the heater is not activated. That is, room temperature includes the temperature of the unheated drying liquid.

[0074] The drying solution from nozzle 30i is applied to the center of the first main surface Wa of the substrate W. The drying solution applied to the first main surface Wa is subjected to centrifugal force due to the rotation of the substrate W, flowing radially outward and scattering from the periphery of the substrate W. At this time, the drying solution washes away the cleaning solution on the first main surface Wa of the substrate W, causing the processing solution on the first main surface Wa of the substrate W to be replaced by the drying solution. The processing solution scattering from the periphery of the substrate W is caught by the protective member 7 and discharged to the outside of the chamber 10 through the discharge pipe 12.

[0075] Here, the rotation speed of the substrate W in the drying liquid supply process can be set to, for example, 150 rpm or more and 600 rpm or less, or 200 rpm or more and 400 rpm or less. As a more specific example, the rotation speed can be set to 300 rpm.

[0076] Furthermore, the processing unit 1 heats the second main surface Wb of the substrate W while supplying the drying liquid. That is, the substrate heating unit 4 heats the second main surface Wb of the substrate W. As a more specific example, the control unit 90 opens the supply valve 42 and activates the heater 44. Accordingly, as shown in FIG5, a high-temperature heat medium (e.g., warm water) is sprayed from the nozzle 40 towards the center of the second main surface Wb of the rotating substrate W. The heat medium adhering to the center of the second main surface Wb of the substrate W is subjected to centrifugal force accompanying the rotation of the substrate W and flows radially outward, scattering from the periphery of the substrate W. As the high-temperature heat medium flows along the second main surface Wb of the substrate W, heat is transferred from the heat medium to the substrate W, and the substrate W is heated. The heat of the substrate W is transferred to the drying liquid on the first main surface Wa. Therefore, the drying liquid on the first main surface Wa of the substrate W is also heated and its temperature rises.

[0077] The substrate heating section 4 heats the second main surface Wb of the substrate W so that the temperature of at least a portion (here, the central portion) of the second main surface Wb of the substrate W is above the boiling point of the drying liquid. For example, the heater 44 heats the heat medium so that the temperature of the heat medium (hereinafter also referred to as the medium temperature) is above the boiling point of the drying liquid. The medium temperature of the heat medium mentioned here is, for example, the temperature of the heat medium in the nozzle 40. When the drying liquid is isopropanol, the boiling point is 82.4 degrees Celsius, and the medium temperature of the heat medium is set to, for example, about 85 degrees Celsius. However, the medium temperature of the heat medium can be set to a temperature below the boiling point of the heat medium. For example, when the heat medium is water, it can be set to 90 degrees Celsius, which is 10 degrees lower than the boiling point (100 degrees Celsius). Accordingly, SEMI (Semiconductor Equipment and Materials International) specifications can be complied with.

[0078] The flow regulating valve 43 can adjust the flow rate of the heating medium to a value greater than that of the drying liquid. More specifically, the flow regulating valve 43 can adjust the flow rate of the heating medium to 1000 mL / min or more, or even 1500 mL / min or more.

[0079] Nozzle 30i ejects a drying liquid with a temperature lower than that of the heating medium. Therefore, a low-temperature drying liquid is continuously supplied to the first main surface Wa of the substrate W. Thus, the low-temperature drying liquid cools the first main surface Wa of the substrate W. The higher the flow rate of the drying liquid, the greater its cooling capacity. Therefore, the flow rate regulating valve 33i adjusts the flow rate of the drying liquid to a value that prevents the temperature of the first main surface Wa of the substrate W from reaching its boiling point. For example, the flow rate of the drying liquid is preset to approximately 100 mL / min or more specifically, it can be set to 250 mL / min or more.

[0080] As described above, in the drying liquid supply process, the processing unit 1 heats at least a portion of the second main surface Wb of the substrate W to above the boiling point of the drying liquid, and supplies the drying liquid to the first main surface Wa of the substrate W at a flow rate where the temperature of the first main surface Wa of the substrate W does not reach the boiling point of the drying liquid.

[0081] While the self-cleaning liquid is being fully replaced by the drying liquid, the processing unit 1 dries the substrate W (step S6: drying process). Specifically, the processing unit 1 measures the time elapsed since the drying liquid begins to be sprayed and determines whether this elapsed time is greater than or equal to a predetermined drying liquid supply time. The drying liquid supply time is preset to the time required for sufficient replacement of the self-cleaning liquid with the drying liquid. The drying liquid supply time is set to, for example, several tens of seconds or more, and as a specific example, it can be set to about 40 seconds. Furthermore, when this elapsed time is greater than or equal to the drying liquid supply time, the processing unit 1 dries the substrate W. Specifically, the control unit 90 closes the supply valve 32i. Also, the substrate heating unit 4 stops heating the second main surface Wb of the substrate W.

[0082] Furthermore, the control unit 90 increases the rotational speed of the substrate W by the substrate holding unit 2. For example, the substrate holding unit 2 can rotate the substrate W at a rotational speed of, for example, 800 rpm or more and 2500 rpm or less, or at a rotational speed of 800 rpm or more and 1500 rpm or less. Also, the substrate holding unit 2 can gradually (for example, in stages) increase the rotational speed of the substrate W.

[0083] Processing unit 1 can supply inert gas to the center of the first main surface Wa of substrate W. Specifically, control unit 90 can open supply valve 32g and activate heater 34g. Hereby, high-temperature inert gas is ejected from the gas outlet (i.e., the lower port of gas flow path 30g) at the center of the lower surface of opposing member 60 to the center of the first main surface Wa of substrate W. The inert gas located at the center of the first main surface Wa of substrate W flows radially outward along the first main surface Wa. Heater 34g can heat the inert gas to, for example, 60 degrees Celsius or higher, 70 degrees Celsius or higher, or 80 degrees Celsius or higher. The temperature of the inert gas can, for example, be the temperature of the inert gas at the gas outlet of gas flow path 30g. Flow regulating valve 33g can adjust the flow rate of the inert gas to, for example, 10 L / min or higher and 300 L / min or lower.

[0084] When the drying liquid has fully evaporated, the processing unit 1 stops the ejection of inert gas and stops the rotation of the substrate W. As a specific example, the control unit 90 measures the time elapsed since the drying liquid stopped being ejected and determines whether this measured time is greater than or equal to a predetermined drying time. The drying time is preset to the time required for the substrate W to be sufficiently dried. When this elapsed time is greater than or equal to the predetermined drying time, the control unit 90 switches the supply valve 32g from the open state to the closed state and stops the rotation of the substrate W by the substrate holding unit 2. Furthermore, the movement drive unit 35 moves the ejector head to the standby position, and the protective member lifting drive unit 71 lowers the protective member 7 to the lower position.

[0085] Next, the substrate holding section 2 releases its grip on the substrate W (step S7: grip release process). Then, the second conveying section 122 removes the processed substrate W from the processing unit 1.

[0086] As described above, the processing unit 1 can process the substrate W. However, in this embodiment, during the drying liquid supply process after the liquid supply process, which includes the chemical solution process and the cleaning process, the substrate heating unit 4 heats the substrate W. Figure 6 is a schematic diagram showing the timing of the processing unit 1, the time change of the medium temperature of the heat medium, and an example of the time change of the temperature of the first main surface Wa of the substrate W. Hereinafter, the temperature of the first main surface Wa of the substrate W will also be referred to as the substrate temperature. In the example of Figure 6, the substrate temperature at radially different positions on the first main surface Wa of the substrate W is shown as graphs G1 to G5. In graphs G1 to G5, the smaller the number of the symbol, the closer it is to the rotation axis Q1. That is, graph G1 shows the substrate temperature on the side closest to the center of the first main surface Wa of the substrate W, and graph G5 shows the substrate temperature on the side closest to the periphery of the first main surface Wa of the substrate W.

[0087] In the example of Figure 6, at time t1, the control unit 90 switches the supply valve 32i from the closed state to the open state. This initiates the spraying of drying liquid from the nozzle 30i onto the first main surface Wa of the substrate W. At this time t1, the actual drying liquid supply process begins. Also, at, for example, time t1, the control unit 90 switches the supply valve 42 from the closed state to the open state, activating the heater 44. This causes a high-temperature heat medium to be sprayed from the nozzle 40 onto the second main surface Wb of the substrate W, heating the substrate W. In the example of Figure 6, the temperature of the heat medium sprayed from the nozzle 40 may be higher than the boiling point bp of the drying liquid.

[0088] When the heat medium is first ejected, the substrate temperature at various locations on the first main surface Wa of the substrate W rises over time. The substrate temperature rises at a relatively high rate to a certain level, then rises slowly or converges. As shown in Figure 6, the substrate temperature at various locations on the first main surface Wa of the substrate W is lower than the boiling point bp of the drying liquid. This is because, as described above, the flow regulating valve 33i adjusts the flow rate of the drying liquid so that the substrate temperature does not reach the boiling point bp of the drying liquid. In the example of Figure 6, because the heat medium is applied to the central portion of the second main surface Wb of the substrate W, the substrate temperature on the first main surface Wa of the substrate W has the temperature distribution described below. That is, as shown in Figure 6, the substrate temperature is higher in the central portion of the substrate W and decreases towards the radially outward side.

[0089] At time t2, which is later than time t1, the control unit 90 switches the supply valves 32i and 42 from the open state to the closed state. That is, at time t2, the actual drying liquid supply process ends. At time t2, the substrate temperature at the center of the first main surface Wa is, for example, 70 degrees Celsius or higher, and may be, for example, around 80 degrees Celsius. Also, at time t2, the substrate temperature at the periphery of the first main surface Wa is, for example, 60 degrees Celsius or higher, and more specifically, around 70 degrees Celsius.

[0090] As described above, the substrate temperature during the desiccant supply process does not reach the boiling point (bp) of the desiccant. Therefore, boiling of the desiccant during the desiccant supply process can be suppressed more reliably. If the desiccant on the first main surface Wa of the substrate W boils during desiccant supply, it will cause particles to adhere to the first main surface Wa. In this embodiment, because boiling of the desiccant is suppressed more reliably, adhesion of particles to the first main surface Wa of the substrate W can be suppressed more reliably.

[0091] However, during the desiccant supply process, the temperature of at least a portion of the second main surface Wb of the substrate W is above the boiling point bp of the desiccant. Therefore, during the desiccant supply process, the maximum value of the temperature distribution on the first main surface Wa of the substrate W can be made closer to the boiling point bp. The minimum value of the temperature distribution on the first main surface Wa of the substrate W during the desiccant supply process (i.e., the substrate temperature at the periphery of the first main surface Wa) is, for example, 60 degrees Celsius or higher. That is, the flow rate of the desiccant can be set such that the substrate temperature at each location on the first main surface Wa of the substrate W is above 60 degrees Celsius and does not reach the boiling point bp of the desiccant.

[0092] Therefore, in this embodiment, during the drying liquid supply process, the temperature of the drying liquid on the first main surface Wa of the substrate W can be brought closer to the boiling point bp. Therefore, in the drying process immediately after the drying liquid supply stops, the temperature of the drying liquid can be further increased. Therefore, during the drying process, the surface tension of the drying liquid can be further reduced, and the evaporation rate of the drying liquid can be further increased. By reducing the surface tension, the pattern collapse rate can be effectively reduced. Furthermore, since the drying liquid can evaporate in a shorter time, the impact force on the pattern caused by the surface tension of the drying liquid during evaporation can also be reduced. Accordingly, the pattern collapse rate can also be effectively reduced.

[0093] Furthermore, the substrate heating unit 4 supplies a heat medium to the second main surface Wb of the substrate W, thereby heating the substrate W. Accordingly, the substrate heating unit 4 can be simply configured to heat at least a portion of the second main surface Wb of the substrate W to above the boiling point of the drying liquid.

[0094] Furthermore, in the example described above, the ejector 3 ejects a drying liquid at room temperature, but it can also eject a drying liquid at high temperature. For example, the ejector 3 may further include a heater (not shown). This heater is provided in the supply pipe 31i and heats the drying liquid flowing in the supply pipe 31i. The motor is controlled by the control unit 90. The heater heats the drying liquid so that its temperature is higher than room temperature but does not reach the boiling point (bp) of the drying liquid. For example, the heater can raise the temperature of the drying liquid to above 60 degrees Celsius, and as a specific example, it can raise it to around 70 degrees Celsius.

[0095] <Second Implementation Form> It can be seen that the collapse rate of the pattern at the periphery tends to be higher than that at the center of the first main surface Wa of the substrate W. Therefore, in the second embodiment, it is particularly attempted to reduce the collapse rate of the pattern at the periphery of the first main surface Wa of the substrate W.

[0096] The substrate processing apparatus 100 of the second embodiment is configured in the same way as the first embodiment. However, the specific configuration of the substrate heating section 4 of the processing unit 1 differs from that of the first embodiment. Figure 7 is a schematic diagram showing the first example of the substrate heating section 4 of the second embodiment. In Figure 7, the substrate W held by the substrate holding section 2 is also shown. In the example of Figure 7, the substrate heating section 4 is positioned in the vertical direction opposite to the peripheral portion of the second main surface Wb of the substrate W held by the substrate holding section 2. The substrate heating section 4 heats the peripheral portion of the second main surface Wb of the substrate W to above the boiling point bp of the drying liquid.

[0097] Figure 8 is a schematic diagram showing a first example of the configuration of a portion of the processing unit 1 in the second embodiment. In the example of Figure 8, the substrate heating section 4 replaces the nozzle 40 and includes an outlet pipe 45. The outlet pipe 45 is disposed directly below the substrate W held by the substrate holding section 2. Specifically, the outlet pipe 45 is disposed between the substrate W held by the substrate holding section 2 and the rotating base 21. The outlet pipe 45 extends radially, and its upstream end is connected to the downstream end of the supply pipe 41. The downstream end of the outlet pipe 45 is located radially inward than the clamping pin 22 of the substrate holding section 2. In the outlet pipe 45, an outlet 4a is formed facing the peripheral portion of the second main surface Wb of the substrate W in the vertical direction. A heat medium is ejected from the outlet 4a of the outlet pipe 45, and the heat medium is liquidized on the peripheral portion of the second main surface Wb of the substrate W. The heat transfer medium, which is applied to the second main surface Wb, moves radially outward as the substrate W rotates, and disperses from the periphery of the substrate W to the outside. Therefore, the substrate heating part 4 heats the periphery of the second main surface Wb of the substrate W. The distance between the position of the heat transfer medium on the second main surface Wb and the rotation axis Q1 can be more than 60%, 70%, 80%, or 90% of the radius of the substrate W.

[0098] Similar to the first embodiment, the substrate heating unit 4 supplies a heat medium with a boiling point bp or higher of the drying liquid to the second main surface Wb of the substrate W. The temperature of the heat medium is, for example, about 85 degrees Celsius. The substrate heating unit 4 can heat the peripheral portion of the second main surface Wb of the substrate W to a temperature above the boiling point bp of the drying liquid. The temperature of the first main surface Wa of the substrate W decreases as the liquid-coated portion of the heat medium separates radially.

[0099] An example of the operation of the processing unit 1 in the first embodiment of the second embodiment is the same as that in the flowchart of Figure 4. In the second embodiment, during the drying liquid supply process (step S5), the substrate heating unit 4 heats the peripheral portion of the second main surface Wb of the substrate W to above the boiling point bp of the drying liquid. In other words, the central portion of the second main surface Wb of the substrate W is hardly heated.

[0100] Similarly to the first embodiment, in the drying liquid supply process, the processing unit 1 supplies the drying liquid to the first main surface Wa of the substrate W at a flow rate where the temperature of the first main surface Wa of the substrate W does not reach the boiling point bp of the drying liquid.

[0101] As described above, in the first example of the second embodiment, the substrate heating part 4 heats the periphery of the second main surface Wb of the substrate W, thereby causing the temperature of the periphery of the first main surface Wa of the substrate W to rise in a concentrated manner. For example, the substrate temperature of the periphery (liquid contact position) of the first main surface Wa of the substrate W can be raised to about 80 degrees Celsius.

[0102] Therefore, in the drying process immediately after the supply of drying liquid stops, the temperature of the drying liquid on the periphery of the first main surface Wa of the substrate W can be further increased. Consequently, during the drying process, the surface tension of the drying liquid on the periphery can be further reduced, and the evaporation rate of the drying liquid on the periphery can be further increased. This effectively reduces the collapse rate of the pattern on the periphery of the first main surface Wa of the substrate W.

[0103] As mentioned above, the collapse rate of the pattern at the periphery tends to be higher than that of the pattern at the center. Therefore, by reducing the collapse rate of the pattern at the periphery, the collapse rate of the pattern on the entire first main surface Wa of the substrate can be reduced.

[0104] Figure 9 is a schematic diagram showing a second example of the substrate heating section 4 in the second embodiment. Figure 9 also shows a substrate W held by the substrate holding section 2. In the example of Figure 9, the substrate heating section 4 includes a peripheral heating section 4A and a central heating section 4B. The peripheral heating section 4A is positioned vertically opposite to the peripheral portion of the second main surface Wb of the substrate W held by the substrate holding section 2. The peripheral heating section 4A heats the peripheral portion of the second main surface Wb of the substrate W to above the boiling point bp of the drying liquid. The central heating section 4B is positioned radially inward than the peripheral heating section 4A and is positioned vertically opposite to the central portion of the second main surface Wb of the substrate W. The central heating section 4B heats the central portion of the second main surface Wb of the substrate W. The central heating section 4B heats the central portion of the second main surface Wb to a temperature, for example, lower than that of the peripheral portion of the second main surface Wb.

[0105] Figure 10 is a schematic diagram showing a second example of the configuration of a portion of the processing unit 1 in the second embodiment. In the example of Figure 10, the peripheral heating unit 4A supplies heat medium to the peripheral portion of the second main surface Wb of the substrate W, and the central heating unit 4B supplies heat medium to the central portion of the second main surface Wb of the substrate W. The peripheral heating unit 4A and the central heating unit 4B can supply heat medium at different medium temperatures. In the example of Figure 10, the peripheral heating unit 4A includes a supply pipe 41A, a supply valve 42A, a flow regulating valve 43A, a heater 44A, and an outlet pipe 45. The supply pipe 41A, the supply valve 42A, the flow regulating valve 43A, and the heater 44A are the same as those in Figure 8. In the example of Figure 10, the central heating unit 4B includes a supply pipe 41B, a supply valve 42B, a flow regulating valve 43B, a heater 44B, and a nozzle 40. The supply pipe 41B, supply valve 42B, flow regulating valve 43B, and heater 44B are the same as those in Figure 3. Parts of the supply pipes 41A and 41B are arranged adjacent to each other in the hollow portion of the shaft 231.

[0106] Heater 44A heats the heat medium so that the temperature of the first heat medium ejected from the outlet 4a of the outlet pipe 45 is above the boiling point (bp) of the drying liquid. Heater 44B heats the heat medium so that the temperature of the second heat medium ejected from the outlet 40 of the nozzle 40 does not reach, for example, the temperature of the first heat medium. The temperature of the first heat medium may be, for example, around 85 degrees Celsius, and the temperature of the second heat medium may be, for example, around 70 degrees Celsius.

[0107] An example of the operation of the processing unit 1 in the second embodiment of the second example is the same as that in the flowchart of FIG4. In the second example of the second embodiment, during the drying liquid supply process (step S5), the substrate heating unit 4 heats the peripheral portion (at least the liquid-coated portion of the heat medium) of the second main surface Wb of the substrate W to above the boiling point bp of the drying liquid, and heats the central portion of the second main surface Wb of the substrate W to a temperature lower than that of the peripheral portion (e.g., a temperature below the boiling point bp). Specifically, during the drying liquid supply process, the control unit 90 opens the supply valves 42A and 42B. Furthermore, the heater 44A heats the heat medium to make the temperature of the first medium above the boiling point bp of the drying liquid, and the heater 44B heats the heat medium within a range that keeps the temperature of the second medium below the temperature of the first medium. The temperature of the second medium does not reach, for example, the boiling point bp.

[0108] On the other hand, the substrate temperature at the center of the first main surface Wa of the substrate W is, for example, about 70 degrees Celsius, and the substrate temperature at the periphery of the first main surface Wa of the substrate W is, for example, about 80 degrees Celsius. Here, the substrate temperature at the center of the first main surface Wa of the substrate W is, for example, the substrate temperature at the position facing the liquid application position of the heat medium from the nozzle 40 in the vertical direction, and the substrate temperature at the periphery is, for example, the substrate temperature at the position facing the liquid application position of the heat medium from the outlet pipe 45 in the vertical direction.

[0109] As described above, in the second example of the second embodiment, the substrate heating section 4 also heats the peripheral portion of the second main surface Wb of the substrate W. Therefore, for example, the substrate temperature in the peripheral portion (liquid contact position) of the first main surface Wa of the substrate W can be raised to about 80 degrees Celsius. Therefore, the collapse rate of the pattern in the peripheral portion of the first main surface Wa of the substrate W can be reduced.

[0110] Furthermore, in the second example of the second embodiment, the substrate heating section 4 also heats the central portion of the second main surface Wb of the substrate W. The substrate temperature at the central portion of the first main surface Wa of the substrate W is lower than the substrate temperature at the periphery. Since the collapse rate of the pattern in the periphery of the substrate W tends to be lower, even if the substrate temperature at the central portion is lower than the substrate temperature at the periphery, the collapse rate of the pattern in the central portion can be sufficiently reduced. Furthermore, since the central portion of the substrate W is not overheated, the power consumption of the substrate heating section 4 can be reduced. That is, by reducing power consumption and lowering the collapse rate of the pattern in the central portion of the first main surface Wa of the substrate W, the overall pattern collapse rate can be further reduced.

[0111] Furthermore, the substrate heating unit 4 supplies a heat medium at the first medium temperature to the periphery of the second main surface Wb of the substrate W, and supplies a heat medium at the second medium temperature to the center of the second main surface Wb of the substrate W. Therefore, the processing unit 1 can be simply configured to reduce the collapse rate of the entire pattern on the first main surface Wa of the substrate W.

[0112] In the example described above, the substrate heating section 4 includes a peripheral heating section 4A and a central heating section 4B, but it may also include three or more heating sections. The three or more heating sections may be arranged radially. The three or more heating sections heat radially different portions of the second main surface Wb of the substrate W. In this case, the closer the heating section is to the periphery of the substrate W, the higher the temperature it can heat the corresponding portion of the second main surface Wb of the substrate W.

[0113] <Third Implementation Form> In the first and second embodiments, the substrate heating unit 4 heats the second main surface Wb of the substrate W throughout the entire drying liquid supply time of the drying liquid supply process (step S5). However, it is not necessarily limited to this.

[0114] Figure 11 is a schematic diagram showing an example of the timing diagram of the processing unit 1 in the third embodiment. In the example of Figure 11, at time t1, the control unit 90 switches the supply valve 32i from the closed state to the open state. This initiates the spraying of drying liquid from the nozzle 30i onto the first main surface Wa of the substrate W. That is, the actual drying liquid supply process begins at time t1. On the other hand, in the example of Figure 11, at time t12, which is later than time t1, the control unit 90 switches the supply valve 42 from the closed state to the open state. This initiates the spraying of high-temperature heat medium from the nozzle 40 onto the second main surface Wb of the substrate W. That is, the substrate heating unit 4 begins to heat the second main surface Wb of the substrate W. Furthermore, at time t2, which is later than time t12, the control unit 90 switches both the supply valve 32i and the supply valve 42 from the open state to the closed state. That is, at time t2, the actual drying liquid supply process ends.

[0115] As described above, in the third embodiment, during the drying liquid supply time T from time t1 to time t2, the substrate heating unit 4 does not heat the second main surface Wb of the substrate W during the predetermined period T1 before time t12, and heats the second main surface Wb of the substrate W during the predetermined period T2 after time t12. The latter period T2 is preset to be the time during which the temperature of the first main surface Wa of the substrate W at time t2 is sufficiently close to the boiling point bp of the drying liquid. For example, the latter period T2 can be set to less than half of the drying liquid supply time T, less than one-third of the drying liquid supply time T, less than one-quarter of the drying liquid supply time T, or less than one-tenth of the drying liquid supply time T.

[0116] As described above, in the third embodiment, the substrate heating unit 4 does not heat the substrate W during the initial period T1, but heats the second main surface Wb of the substrate W during the subsequent period T2. That is, the substrate heating unit 4 only heats the second main surface Wb of the substrate W during the subsequent period T2. Therefore, the operation time of the substrate heating unit 4 can be shortened, and the power consumption of the substrate processing apparatus 100 can be reduced. Furthermore, when the substrate heating unit 4 supplies a high-temperature heat medium to the second main surface Wb of the substrate W, the amount of heat medium used can be reduced. When the heat medium is liquid, liquefaction can be reduced.

[0117] <Fourth Implementation Form> In the example above, processing unit 1 sequentially performs the liquid treatment process (step S3), the cleaning process (step S4), the drying liquid supply process (step S5), and the drying process (step S6). However, it is not necessarily limited to this.

[0118] Figure 12 is a flowchart showing the first example of the operation of the processing unit 1 in the fourth embodiment. In the example of Figure 12, the control unit 90 causes the processing unit 1 to perform steps S11 to S19 according to a preset processing sequence (formula). Steps S11 to S15 are the same as steps S1 to S5. However, in step S15 (drying liquid supply process), the substrate heating unit 4 may not heat the substrate W.

[0119] Next, processing unit 1 hydrophobizes the first main surface Wa of substrate W (step S16: hydrophobication process: equivalent to liquid supply process). Specifically, processing unit 1 includes a nozzle for ejecting hydrophobic liquid, from which the hydrophobic liquid is ejected onto the first main surface Wa of the rotating substrate W. The hydrophobic liquid includes, for example, a silicon-based hydrophobic liquid. Silicon-based hydrophobic liquid is a hydrophobic liquid that hydrophobizes silicon (Si) itself and compounds containing silicon. The hydrophobic liquid is, for example, a silanizing liquid containing a liquid silanizing agent (also known as a silane coupling agent). Processing unit 1 stops ejecting the hydrophobic liquid from the nozzle when the first main surface Wa of substrate W is sufficiently hydrophobized.

[0120] Next, processing unit 1 executes steps S17 to S19. Steps S17 to S19 are the same as steps S5 to S7.

[0121] As described above, in the first example, the drying liquid supply process (step S17) is performed in the same manner as in the drying liquid supply process (step S5) of the first to third embodiments. Therefore, the collapse rate of the pattern on the substrate W can be reduced. However, since the first main surface Wa of the substrate W is hydrophobic, the contact angle of the first main surface Wa can be reduced. Therefore, the surface tension acting on the pattern can be reduced, and the collapse rate of the pattern can be further reduced.

[0122] Figure 13 is a flowchart showing a second example of the operation of the processing unit 1 in the fourth embodiment. In the example of Figure 13, the control unit 90 causes the processing unit 1 to perform steps S21 to S26 according to a preset processing sequence (formula). Steps S21 to S26 are the same as steps S1 to S3 and steps S5 to S7, respectively. At the end of step S23 (liquid process: equivalent to liquid supply process), the metal is exposed on the first main surface Wa of the substrate W. According to the second example, after step S23, step S24 (drying liquid supply process) is performed. Therefore, water is not supplied to the first main surface Wa of the substrate W. Therefore, the reaction between the metal and water can be avoided, and the defects caused by the reaction can be avoided. Furthermore, in the above second example, the drying liquid supply process (step S24) is performed in the same way as the drying liquid supply process (step S5) in the first to third embodiments. Therefore, the collapse rate of the pattern on the substrate W can be reduced.

[0123] <Fifth Implementation Form> Figure 14 is a schematic diagram showing one example of the configuration of the processing unit 1 in the fifth embodiment. The difference between the processing unit 1 in the fifth embodiment and the processing unit 1 in the first embodiment lies in the configuration of the ejection section 3 and the opposing member 60. In the example of Figure 14, the opposing member 60 includes a blocking plate 6 and a hollow shaft 61. The blocking plate 6 is positioned in the vertical direction opposite to the first main surface Wa of the substrate W held by the substrate holding section 2. In the example of Figure 14, since the first main surface Wa of the substrate W is equivalent to the upper surface, the blocking plate 6 is positioned higher vertically than the substrate W. The blocking plate 6 has, for example, a plate-like shape and is positioned with its thickness direction along the vertical direction. The lower surface of the blocking plate 6 is the opposing surface opposite to the first main surface Wa of the substrate W. The blocking plate 6 has, for example, a circular shape when viewed from above. The diameter of the blocking plate 6 (i.e., the diameter of the opposing surface) can be, for example, more than 80% of the diameter of the substrate W, more than 90% of the diameter of the substrate W, or more than the diameter of the substrate W.

[0124] In the example of Figure 14, a hollow shaft 61 is provided on the upper surface of the blocking plate 6. The hollow shaft 61 has a hollow portion, and a through hole is formed in the center of the blocking plate 6, extending vertically. This hollow portion is connected to the through hole of the blocking plate 6 in the vertical direction. A nozzle 30i is provided in the hollow portion of the hollow shaft 61 and the through hole of the blocking plate 6. The diameter of the outer peripheral surface of the nozzle 30i is smaller than the diameter of the inner peripheral surface of the hollow shaft 61 and the blocking plate 6. The space between the outer peripheral surface of the nozzle 30i and the inner peripheral surface of the hollow shaft 61 and the blocking plate 6 functions as a gas flow path 30g.

[0125] In the example of Figure 14, nozzles 30c and 30w are disposed outside the opposing member 60. Also, in the example of Figure 14, a movement drive unit 35c and a movement drive unit 35w are provided, serving as the movement drive unit 35. The movement drive unit 35c moves nozzle 30c between a processing position and a standby position, and the movement drive unit 35w moves nozzle 30w between a processing position and a standby position.

[0126] In the example of Figure 14, a movement drive unit 35i is provided, serving as the movement drive unit 35. The movement drive unit 35i moves the nozzle 30i and the opposing member 60 together. The movement drive unit 35i moves the nozzle 30i and the opposing member 60 together in, for example, a vertical direction. In this case, the movement drive unit 35i can also be referred to as a lifting drive unit. The movement drive unit 35i includes a drive source such as a motor, and a power transmission unit that transmits power from the drive source to the nozzle 30i and the blocking plate 6. The power transmission unit includes, for example, a cam mechanism or a ball screw mechanism.

[0127] The operation of the processing unit 1 in the fifth embodiment is the same as that in the flowchart of FIG4. In the drying liquid supply process and the drying process, the moving drive unit 35i lowers the nozzle 30i and the opposing member 60 to a processing position closer to the substrate W, and then rises to a standby position higher than the processing position.

[0128] In the fifth embodiment, the drying liquid supply process (step S5) of the first to third embodiments is also performed. Therefore, the collapse rate of the pattern in the periphery of the substrate W can be reduced.

[0129] As described above, although the substrate processing apparatus 100 and the substrate processing method have been described in detail, the above description is illustrative of all embodiments and is not limited thereto. Furthermore, the various variations described above can be combined and applied as long as they do not contradict each other. Moreover, it is understood that numerous variations not illustrated can be conceived without departing from the scope of this disclosure.

[0130] In the example above, each fluid has its own dedicated nozzle, but different types of fluids can share a single nozzle.

[0131] In the example described above, the substrate heating section 4 supplies a heat medium to the second main surface Wb of the substrate W, but this is not necessarily the case. The substrate heating section 4 may include, for example, a heater positioned vertically opposite to the second main surface Wb of the substrate W. The heater may be, for example, a resistance heater containing heating wires, or an optical heater that outputs light for heating. For example, the peripheral heating section 4A may be a resistance or optical heater. The peripheral heating section 4A may be arranged to surround the rotation axis Q1. The central heating section 4B may also be a resistance or optical heater.

[0132] 1: Processing Unit 2: Substrate holding section 3: Ejection section 3c: Spray nozzle 3i: Spray outlet 3w: Exit 4: Substrate heating section 4A: Peripheral heating section 4a: Spray outlet 4B: Central Heating Unit 6: Blocking plate 7: Protective components 10: Chamber 11: Fan filter unit 12: Discharge pipe 13: Exhaust pipe 21: Rotating base 22: Clamping pin 23: Rotary drive unit 30: Nozzle 30c: Nozzle 30g: Gas flow path 30i: Nozzle 30W: Nozzle 31: Supply Management 31c: Supply pipe 31g: Supply tube 31i: Supply pipe 31w: Supply Management 32: Supply valve 32c: Supply valve 32g: Supply valve 32i: Supply valve 32w: Supply valve 33: Flow regulating valve 33c: Flow regulating valve 33g: Flow regulating valve 33i: Flow regulating valve 33w: Flow regulating valve 34g: Heater 35: Mobile Drive Unit 35c: Mobile Drive Unit 35i: Motion Drive Unit 35w: Mobile Drive Unit 40: Nozzle 41: Supply Management 41A: Supply pipe 41B: Supply pipe 42: Supply valve 42A: Supply valve 42B: Supply valve 43: Flow regulating valve 43A: Flow regulating valve 43B: Flow regulating valve 44: Heater 44A: Heater 44B: Heater 45: Export tube 60: Opposing members 61: Hollow Shaft 71: Protective component lifting drive unit 72: Cup 90: Control Department 91: Data Processing Department 92: Memory Department 93: Busbar 100: Substrate processing apparatus 110: Transport Block 111: Loading Port 112: 1st Transport Department 120: Processing Blocks 122: 2nd Transport Department 123: Loading section 231: Axis 232: Motor 351: Arm 352: Support column 353: Driver Source 921: Memory Department 922: Memory Department bp: boiling point C: Carrier G1~G5: Charts Q1: Axis of rotation Q2: Central axis S1: Holding process (step) S1~S3, S7: Steps S4, S16, S23: Liquid supply process (steps) S5, S17, S24: Drying solution supply process (steps) S6, S18, S25: Drying process (steps) S11~S15, S19: Steps S21, S22, S26: Steps T: Drying solution supply time TW: Tower T1: Some time ago T2: Later period t1: Time point t2: time point t12: Time point W: substrate Wa: 1st main surface Wb: Second primary surface

Claims

1. A substrate processing method comprising: a holding step, wherein the substrate has a patterned first main surface and a second main surface opposite to the first main surface; a liquid supply step, wherein a processing liquid is supplied to the first main surface of the substrate; a drying liquid supply step, wherein, after the liquid supply step, at least a portion of the second main surface of the substrate is heated to above the boiling point of the drying liquid, and the drying liquid is supplied to the first main surface of the substrate at a flow rate at which the temperature of the first main surface of the substrate does not reach the boiling point of the drying liquid, thereby replacing the processing liquid on the first main surface of the substrate with the drying liquid; and a drying step, wherein, after the drying liquid supply step, the substrate is dried; and in the drying liquid supply step, a peripheral portion of the second main surface of the substrate is heated to above the boiling point of the drying liquid. In the above-mentioned drying liquid supply process, the central portion of the second main surface of the substrate is heated to a temperature lower than that of the peripheral portion of the second main surface.

2. The substrate processing method of claim 1, wherein in the above-mentioned drying liquid supply process, a heat medium with a boiling point above the boiling point of the drying liquid is supplied to the above-mentioned second main surface of the substrate.

3. The substrate processing method of claim 1 or 2, wherein in the above-mentioned drying liquid supply process, the central portion of the second main surface of the substrate is heated to a temperature that does not reach the boiling point of the drying liquid.

4. A substrate processing method comprising: a holding step, wherein the substrate has a patterned first main surface and a second main surface opposite to the first main surface; a liquid supply step, wherein a processing liquid is supplied to the first main surface of the substrate; a drying liquid supply step, wherein, after the liquid supply step, at least a portion of the second main surface of the substrate is heated to above the boiling point of the drying liquid while the drying liquid is supplied to the first main surface of the substrate at a flow rate at which the temperature of the first main surface of the substrate does not reach the boiling point of the drying liquid; and a drying step, wherein, after the drying liquid supply step, the substrate is dried; wherein, in the drying liquid supply step, a peripheral portion of the second main surface of the substrate is heated to above the boiling point of the drying liquid; and, in the drying liquid supply step, a central portion of the second main surface of the substrate is heated to a temperature lower than the temperature of the peripheral portion of the second main surface. In the above-mentioned drying liquid supply process, a heat medium with a first medium temperature is supplied to the peripheral portion of the second main surface of the substrate, and a heat medium with a second medium temperature lower than the first medium temperature is supplied to the central portion of the second main surface of the substrate.

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