Semiconductor photonics device and methods of formation

Abstract

A semiconductor photonic device includes a beam splitter structure, an optical waveguide loop adjacent to the beam splitter structure, an optical resonator structure adjacent to the optical waveguide loop, a closed loop optical waveguide structure adjacent to the optical resonator structure, and a photodetector structure optically coupled to the closed loop optical waveguide structure.

Description

Technical Field

[0001] The embodiments of the present invention relate to a semiconductor photonic device and a method for forming the same, and more specifically, to a semiconductor photonic device including an optical multiplexer circuit and a method for forming the same. Prior Technology

[0002] Semiconductor photonic devices can be configured to use fiber optic signals for high-speed and secure data transmission. Semiconductor photonic devices can be used in applications such as high-performance computing (HPC), high-speed telecommunications, data center communications, and / or optical sensing. Summary of the Invention

[0003] According to some embodiments, a semiconductor photonic device includes a beam splitter structure, an optical waveguide loop adjacent to the beam splitter structure, an optical resonator structure adjacent to the optical waveguide loop, a closed loop optical waveguide structure adjacent to the optical resonator structure, and a photodetector structure optically coupled to the closed loop optical waveguide structure.

[0004] According to some embodiments, a semiconductor photonic device includes a beam splitter structure, an optical waveguide loop adjacent to the beam splitter structure, a first optical resonator structure, a first closed-loop optical waveguide structure adjacent to the first optical resonator structure, a first photodetector structure optically coupled to the first closed-loop optical waveguide structure, a second optical resonator structure, a second closed-loop optical waveguide structure adjacent to the second optical resonator structure, and a second photodetector structure optically coupled to the second closed-loop optical waveguide structure. The optical waveguide loop includes a first branch coupled to a first output of the beam splitter structure at a first end of the optical waveguide loop and a second branch coupled to a second output of the beam splitter structure at the first end of the optical waveguide loop, wherein the first branch and the second branch are coupled together at a second end of the optical waveguide loop opposite to the first end. The first optical resonator structure is adjacent to the first branch of the optical waveguide loop, the second optical resonator structure is adjacent to the first branch of the optical waveguide loop, the first closed-loop optical waveguide structure has a first length, and the second closed-loop optical waveguide structure has a second length different from the first length.

[0005] According to some embodiments, a method for forming a semiconductor photonic device includes: forming an optical waveguide loop, wherein the optical waveguide loop is open at a first end and closed at a second end; forming a first optical resonator structure adjacent to the first side of the optical waveguide loop; forming a second optical resonator structure adjacent to the second side of the optical waveguide loop; forming a first closed loop optical waveguide structure adjacent to the first optical resonator structure; forming a second closed loop optical waveguide structure adjacent to the second optical resonator structure; forming a first photodetector structure on the first closed loop optical waveguide structure; and forming a second photodetector structure on the second closed loop optical waveguide structure. Simple Explanation of the Diagram

[0006] The best understanding of this disclosure will be achieved by reading the following detailed description in conjunction with the accompanying drawings. It should be noted that, according to industry standard practice, the various features are not drawn to scale. In fact, the dimensions of the various features may be arbitrarily increased or decreased for clarity of explanation. Figure 1 is a diagram of the example semiconductor photonic device described in this article. Figure 2 is a diagram of an example of a semiconductor photonic device described herein. Figure 3 is a cross-sectional view of an exemplary embodiment of a portion of the semiconductor photonic device described herein. Figure 4 is a diagram of an exemplary embodiment of optical signal propagation in the semiconductor photonic device described herein. Figure 5 is a diagram of an example of the input optical signal described in this article. Figure 6 is a diagram of an exemplary embodiment of a portion of the wavelength component multiplexing circuit described herein. Figures 7A to 7M are diagrams illustrating exemplary embodiments of the semiconductor photonic device (or a portion thereof) described herein. Figure 8 is a flowchart of an example fabrication process associated with the formation of the semiconductor photonic device described herein. Implementation

[0007] The following disclosure provides numerous different embodiments or examples for implementing various features of the provided subject matter. Specific examples of components and arrangements are described below to simplify this disclosure. Of course, these are merely examples and are not intended to be limiting. For example, the following description of a first feature formed on or on a second feature may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed between the first and second features, thereby preventing direct contact between the first and second features. Furthermore, reference numerals and / or letters may be repeated in various instances of this disclosure. Such repetition is for the purpose of brevity and clarity, and does not itself indicate a relationship between the various embodiments and / or configurations discussed.

[0008] Furthermore, for ease of explanation, spatially relative terms such as "beneath," "below," "lower," "above," "upper," and similar expressions may be used herein to describe the relationship between one device or feature shown in the figures and another device or feature. These spatially relative terms are intended to encompass not only the orientation shown in the figures but also different orientations of the device during use or operation. The device may have other orientations (rotated 90 degrees or in other orientations), and the spatially relative descriptions used herein will be interpreted accordingly.

[0009] In some cases, the photonic integrated circuitry of a semiconductor photonic device may include an optical demultiplexer circuit configured to multiplex optical signals using wavelength division multiplexed (WDM). WDM enables an optical signal to carry multiple data streams that are multiplexed together on the optical signal using different optical wavelengths. Generally, the greater the number of data streams multiplexed together on the optical signal, the greater the complexity of the optical demultiplexer circuitry required to multiplex the optical signal. For example, an optical demultiplexer circuit may include a set of photonic components (e.g., optical resonator structures, optical waveguide structures, photodetector structures) for multiplexing each data stream onto the optical signal. Therefore, increasing the number of data streams multiplexed onto the optical signal increases the number of photonic components used for multiplexing the optical signal.

[0010] Furthermore, optical signals can be received as unpolarized signals, thus requiring them to be polarized into multiple polarized signals, each of which is then multiplexed by an optical multiplexer circuit. This further increases the complexity of the optical multiplexer circuitry and leads to a significant scaling complexity of the increased data flow. For example, each additional data flow multiplexed onto an optical signal can result in the addition of two or more sets of photonic components for two or more polarized optical signals. Consequently, the data flow multiplexed onto an optical signal results in at least a doubling of power consumption and at least a doubling of the physical size of the semiconductor photonic device.

[0011] In some embodiments described herein, the photonic integrated circuitry of a semiconductor photonic device includes an optical multiplexer circuit configured to multiplex multiple polarized optical signals using the same set of photonic components. For example, a WDM optical signal can be split into two or more polarized optical signals, each carrying multiple data streams multiplexed onto different wavelength components. Instead of having a separate optical resonator structure for each of the two or more polarized optical signals, the optical resonator structure, optical waveguide structure, and photodetector structure of the optical multiplexer circuit are configured to multiplex wavelength components from the two or more polarized optical signals. The two or more polarized optical signals can propagate in opposite directions toward the optical resonator structure along the optical waveguide loop and can be optically coupled to the waveguide structure via the optical resonator structure. The length of the optical waveguide structure and the positioning of the photodetector structure along the optical waveguide structure are chosen such that the two or more polarized optical signals travel approximately the same distance to the photodetector structure, thereby synchronizing the two or more polarized optical signals at the photodetector structure.

[0012] Optical multiplexer circuits can include similar arrangements of photonic components for multiplexing other wavelength components of a WDM optical signal. Because only a single optical resonator structure is included for each wavelength component to couple two or more polarized optical signals from the optical waveguide loop to an associated optical waveguide structure (e.g., in contrast to optical resonator structures including those for each of the two or more polarized optical signals), the scaling complexity of the additional data stream of the WDM optical signal is reduced to a 1:1 ratio to the additional data stream of the additional optical resonator structure. This allows additional data streams to be multiplexed onto the WDM optical signal to increase optical communication bandwidth and efficiency while minimizing the increase in power consumption and complexity of the optical multiplexer circuitry.

[0013] Figure 1 is a diagram of an example semiconductor photonic device 100 described herein. The semiconductor photonic device 100 is a semiconductor device including at least one photonic integrated circuit. The photonic integrated circuit may include other types of optical multiplexing circuitry 102 configured to multiplex WDM optical signals and / or multiplex optical signals.

[0014] As shown in Figure 1, the optical multiplexing circuit 102 can be optically coupled to one or more other photonic components of the semiconductor photonic device 100, such as the edge coupler waveguide structure 104, the coupled waveguide structure 106, and / or the polarization splitter and rotator (PSR) waveguide structure 108, and other examples. The edge coupler waveguide structure 104, the coupled waveguide structure 106, and the PSR waveguide structure 108 can be arranged in the x-direction of the semiconductor photonic device 100, and the coupled waveguide structure 106 can be located between the edge coupler waveguide structure 104 and the PSR waveguide structure 108 in the x-direction.

[0015] Edge coupler waveguide structure 104 can be configured to receive an input optical signal (e.g., an unpolarized optical signal) from an external optical input, such as an optical fiber input. The input optical signal can propagate through edge coupler waveguide structure 104 and reach coupling waveguide structure 106. Coupler waveguide structure 106 optically couples the input optical signal from edge coupler waveguide structure 104 to PSR waveguide structure 108. PSR waveguide structure 108 is a type of beam splitter structure that splits the input optical signal into multiple polarized optical signals and provides the polarized optical signals to optical multiplexer circuit 102.

[0016] An optical multiplexer 102 is configured to multiplex the wavelength components of an input optical signal into separate data streams. The optical multiplexer 102 includes an optical waveguide loop 110, which includes elongated branches 112a and 112b extending along the x-direction. The branches 112a and 112b of the optical waveguide loop 110 are coupled together at a loop end 114, such that the optical waveguide loop 110 extends continuously around the loop end 114. The branches 112a and 112b of the optical waveguide loop 110 are spaced apart and disconnected at an input end 116, such that polarized optical signals can be independently provided to branches 112a and 112b. The input end 116 can be referred to as the near end of the optical waveguide loop 110 because the input end 116 is closest to the PSR waveguide structure 108, while the loop end 114 can be referred to as the far end of the optical waveguide loop 110 because the loop end 114 is farthest from the PSR waveguide structure 108.

[0017] Further, as shown in Figure 1, the optical multiplexing circuit 102 includes multiple wavelength component multiplexing circuits, such as wavelength component multiplexing circuits (118a-118f). Each of the wavelength component multiplexing circuits (118a-118f) is configured to multiplex a specific wavelength component of one or more polarized optical signals received at the optical multiplexing circuit 102. For example, six wavelength components can be multiplexed onto one input optical signal; therefore, the optical multiplexing circuit 102 may include six wavelength component multiplexing circuits (118a-118f), each of which is configured to multiplex one of the six wavelength components. Therefore, the number of wavelength component multiplexing circuits (118a-118f) shown in FIG1 is an example, and the number of wavelength component multiplexing circuits (118a-118f) included in the optical multiplexing circuit 102 can be based on the number of wavelength components multiplexed to the input optical signal processed by the optical multiplexing circuit 102.

[0018] A first subset of the wavelength component multiplexing circuits (118a-118f) may be located adjacent to branch 112a, and a second subset of the wavelength component multiplexing circuits (118a-118f) may be located adjacent to branch 112b. For example, wavelength component multiplexing circuits (118a-118c) may be located laterally adjacent to branch 112a, and wavelength component multiplexing circuits (118d-118f) may be located laterally adjacent to branch 112b. In some embodiments, the number of wavelength component multiplexing circuits adjacent to branch 112a is the same as the number of wavelength component multiplexing circuits adjacent to branch 112b. In some embodiments, the number of wavelength component multiplexing circuits adjacent to branch 112a is different from the number of wavelength component multiplexing circuits adjacent to branch 112b.

[0019] Wavelength component multiplexers (118a-118c) located laterally adjacent to branch 112a can be distributed laterally along branch 112a in the x-direction. Wavelength component multiplexer 118a can be closer to the input terminal 116 of optical waveguide loop 110 than wavelength component multiplexers (118b and 118c). Wavelength component multiplexer 118c can be closer to the loop terminal 114 of optical waveguide loop 110 than wavelength component multiplexers (118a and 118b). Wavelength component multiplexer 118b can be laterally positioned between wavelength component multiplexers (118a and 118c) in the x-direction.

[0020] The wavelength component multiplexers (118d-118f), located laterally adjacent to branch 112b, can be distributed laterally along branch 112b in the x-direction. Wavelength component multiplexer 118d can be closer to the input terminal 116 of optical waveguide loop 110 than wavelength component multiplexers (118e and 118f). Wavelength component multiplexer 118f can be closer to the loop terminal 114 of optical waveguide loop 110 than wavelength component multiplexers (118d and 118e). Wavelength component multiplexer 118e can be laterally positioned between wavelength component multiplexers (118d and 118f) in the x-direction.

[0021] Each of the wavelength component multiplexing circuits (118a, 118b, 118c, 118d, 118e, 118f) includes a single optical resonator structure (120a, 120b, 120c, 120d, 120e, 120f) and an associated resonator heating structure (122a, 122b, 122c, 122d, 122e, 122f). For example, wavelength component multiplexing circuit 118a includes a single optical resonator structure 120a and an associated resonator heating structure 122a, wavelength component multiplexing circuit 118b includes a single optical resonator structure 120b and an associated resonator heating structure 122b, and so on.

[0022] Optical resonator structure 120a includes a ring resonator (e.g., a micro-ring resonator (MRR) and / or another type of closed-loop optical resonator) configured to optically couple a specific wavelength component of a polarized light signal from optical waveguide loop 110 to an associated closed-loop optical waveguide structure 124a. Resonator heating structure 122a includes a metal heater (e.g., a tungsten (W) heater and / or other types of metal heaters) and a semiconductor heater (e.g., a silicon (Si) heater and / or other types of semiconductor heaters) that radiate heat to optical resonator structure 120a to stabilize the resonant frequency of optical resonator structure 120a. Optical coupling of optical resonator structure 120a to the wavelength component of a polarized light signal corresponding to the resonant frequency of optical resonator structure 120a. The optical resonator structure (120b-120f) and the resonator heating structure (122b-122f) can be configured in a similar manner to optically couple other wavelength components of the polarized light signal to the optical waveguide loop 110 and the closed loop optical waveguide structure (124b-124f), respectively.

[0023] The closed-loop optical waveguide structures (124a-124f) can be "closed-loop" because each of the closed-loop optical waveguide structures (124a-124f) is a continuous waveguide structure without a termination point. The closed-loop optical waveguide structures (124a-124f) can include semiconductor waveguide structures (e.g., silicon (Si) waveguide structures), dielectric waveguide structures (e.g., silicon nitride (Si xN y) waveguide structures), and / or hybrid semiconductor / dielectric waveguide structures.

[0024] Polarized light signals can propagate in opposite directions around the optical waveguide loop 110, causing them to be optically coupled to the optical resonator structure 120a in opposite directions. For example, a polarized light signal received at branch 112a at the input end 116 of the optical waveguide loop 110 can be optically coupled to the optical resonator structure 120a and propagate around it in a counterclockwise optical path. Another polarized light signal received at branch 112b at the input end 116 of the optical waveguide loop 110 can propagate in the opposite direction around the loop end 114 and be optically coupled to the optical resonator structure 120a via branch 112a, propagating around it in a clockwise optical path. This allows a single optical resonator structure 120a to be used to optically couple multiple polarized light signals to the wavelength component multiplexer circuit 118a, as opposed to using separate optical resonator structures for each of the multiple polarized light signals. The optical resonator structures (120b-120f) can be used in a similar manner to optically couple multiple polarized light signals to wavelength component multiplexing circuits (118b-118f). A detailed operational example of the optical multiplexing circuit 102 is shown and described in conjunction with Figure 4.

[0025] Polarized light signals optically coupled from optical waveguide loop 110 to closed loop optical waveguide structure 124a can propagate around closed loop optical waveguide structure 124a to photodetector structure 126a of wavelength component multiplexing circuit 118a contained in closed loop optical waveguide structure 124a. Wavelength component multiplexing circuits (118b-118f) can each include a similar arrangement of photodetector structures (126b, 126c, 126d, 126e, 126f).

[0026] The photodetector structures (126a-126f) can be configured to convert wavelength components of a polarized optical signal (e.g., multiplexed by wavelength component multiplexing circuits (118a-118f)) into electrical signals corresponding to the data stream carried on those wavelength components. The photodetector structures (126a-126f) may include semiconductor photodetector structures (e.g., germanium (Ge) photodetectors and / or another type of semiconductor photodetector structure) configured to convert photons of the received polarized optical signal into electrons of an electrical signal.

[0027] Since the multiple polarized optical signals optically coupled from the optical waveguide loop 110 to the closed loop optical waveguide structure 124a via the optical resonator structure 120a propagate along different optical propagation paths, the different lengths of these paths can cause a delay in receiving one of the polarized optical signals at the photodetector structure 126a. For example, a first polarized optical signal received at branch 112a may propagate to the optical resonator structure 120a along a shorter optical propagation path than a second polarized optical signal, which is received at branch 112b and propagates through the loop end 114 and returns to the optical resonator structure 120a along branch 112a. To compensate for the longer optical propagation path of the second polarized optical signal, the length of the closed loop optical waveguide structure 124a and the position of the photodetector structure 126a can be selected to ensure that the first polarized optical signal propagates to the photodetector structure 126a via the closed loop optical waveguide structure 124a along a longer optical propagation path than the second polarized optical signal. To achieve this, the photodetector structure 126a can be positioned along the closed-loop optical waveguide structure 124a such that the opposite optical propagation paths from the closed-loop optical waveguide structure 124a to the photodetector structure 126a have different lengths. Therefore, the closed-loop optical waveguide structure 124a is an optical delay line that introduces a propagation delay for the first optical signal within the closed-loop optical waveguide structure 124a to compensate for the propagation delay of the second optical signal in the optical waveguide loop 110. The length of the closed-loop optical waveguide structure 124a (denoted as dimension D1 in Figure 1) can be selected such that the total optical propagation path length of the first polarized optical signal from the input end 116 of the optical waveguide loop 110 to the photodetector structure 126a is approximately equal to the total optical propagation path length of the second polarized optical signal from the input end 116 of the optical waveguide loop 110 to the photodetector structure 126a, so that the first polarized optical signal and the second polarized optical signal are received at the photodetector structure 126a almost simultaneously. The lengths of the closed-loop optical waveguide structures (124b-124f) (denoted as dimensions (D2-D6) in Figure 1) can be selected in a similar manner.

[0028] Because one of the polarized optical signals must propagate through loop 114 and return to input 116 along branches (112a and 112b), the closer the wavelength component multiplexer is to input 116, the longer the closed-loop optical waveguide structure becomes. This is because the closer the wavelength component multiplexer is to input 116, the greater the difference in propagation delay of the polarized optical signal through optical waveguide loop 110. For example, the first polarized optical signal received at branch 112a and propagating through loop 114 and returning to closed-loop optical waveguide structure 124d along branch 112b must propagate a greater distance than the second polarized optical signal received at branch 112b and propagating to closed-loop optical waveguide structure 124d. The delay between the first polarized light signal and the second polarized light signal in the closed loop optical waveguide structure 124d is greater than the delay in the closed loop optical waveguide structure 124f. This is because the first polarized light signal travels a shorter distance along branch 112b to the closed loop optical waveguide structure 124f, while the second polarized light signal travels a longer distance along branch 112b to the closed loop optical waveguide structure 124f. Therefore, the closer the closed loop optical waveguide structure (124a-124f) is to the input end 116 of the optical waveguide loop 110, the greater its length; and the closer the closed loop optical waveguide structure (124a-124f) is to the loop end 114 of the optical waveguide loop 110, the smaller its length. Therefore, the length (dimension D1) of the closed loop optical waveguide structure 124a can be greater than the length (dimension D2) of the closed loop optical waveguide structure 124b, the length (dimension D3) of the closed loop optical waveguide structure 124c, the length (dimension D5) of the closed loop optical waveguide structure 124e, and the length (dimension D6) of the closed loop optical waveguide structure 124f. The length (dimension D4) of the closed loop optical waveguide structure 124d can also be greater than the length (dimension D2) of the closed loop optical waveguide structure 124b, the length (dimension D3) of the closed loop optical waveguide structure 124c, the length (dimension D5) of the closed loop optical waveguide structure 124e, and the length (dimension D6) of the closed loop optical waveguide structure 124f. If the closed loop optical waveguide structures (124a and 124d) are at similar distances from the input end 116 of the optical waveguide loop 110, then the length (dimension D1) of the closed loop optical waveguide structure 124a and the length (dimension D4) of the closed loop optical waveguide structure 124d can have approximately the same length.

[0029] The length (dimension D3) of the closed loop optical waveguide structure 124c can be less than the length (dimension D1) of the closed loop optical waveguide structure 124a, the length (dimension D2) of the closed loop optical waveguide structure 124b, the length (dimension D4) of the closed loop optical waveguide structure 124d, and the length (dimension D5) of the closed loop optical waveguide structure 124e, because the closed loop optical waveguide structure 124c is closer to the loop end 114 of the optical waveguide loop 110 than the closed loop optical waveguide structures (124a, 124b, 124d, and 124e). Similarly, the length (dimension D6) of the closed loop optical waveguide structure 124f can be smaller than the length (dimension D1) of the closed loop optical waveguide structure 124a, the length (dimension D2) of the closed loop optical waveguide structure 124b, the length (dimension D4) of the closed loop optical waveguide structure 124d, and the length (dimension D5) of the closed loop optical waveguide structure 124e, because the closed loop optical waveguide structure 124c is closer to the loop end 114 of the optical waveguide loop 110 than the closed loop optical waveguide structures (124a, 124b, 124d, and 124e).

[0030] Alternatively, the closed loop optical waveguide structure 124a and the closed loop optical waveguide structure 124b may have the same length (e.g., dimensions D1 and D2 are approximately equal), and the photodetector structure 126a may be positioned along the closed loop optical waveguide structure 124a such that the photodetector structure 126a is equidistant from the optical resonator structure 120a along the opposite optical propagation path through the closed loop optical waveguide structure 124a at a greater distance than the photodetector structure 126b is equidistant from the optical resonator structure 120b along the opposite optical propagation path through the closed loop optical waveguide structure 124b.

[0031] As described above, Figure 1 is provided as an example. Other examples may differ from those shown in Figure 1.

[0032] Figure 2 is a diagram of an example 200 of a portion of the semiconductor photonic device 100 described herein. Figure 2 shows a top view of said portion of the semiconductor photonic device 100, which includes an edge coupler waveguide structure 104, a coupling waveguide structure 106, and a PSR waveguide structure 108. As shown in Figure 2, the edge coupler waveguide structure 104, the coupling waveguide structure 106, and the PSR waveguide structure 108 may each extend in the x-direction of the semiconductor photonic device 100.

[0033] The edge coupler waveguide structure 104 may include a tapered section 202, a tapered section 204, and a transition section 206 between the tapered sections (202 and 204). The tapered section 202 may be optically coupled to an optical fiber, cable, and / or other type of external optical input.

[0034] The edge coupler waveguide structure 104 may include a dielectric waveguide comprising one or more dielectric materials. Examples of dielectric materials that may be included in the edge coupler waveguide structure 104 include silicon nitride (SixNy, e.g., Si3N4), aluminum oxide (AlxOy, e.g., Al2O3), aluminum nitride (AlN), hafnium oxide (HfOx, e.g., HfO2), titanium oxide (TiOx, e.g., TiO2), zinc oxide (ZnO), and / or germanium oxide (GeOx, e.g., GeO2) and other examples. Alternatively, the edge coupler waveguide structure 104 may include semiconductor materials such as silicon (Si) and other examples.

[0035] The coupled waveguide structure 106 may include a tapered section 208 at a first end of the coupled waveguide structure 106. The tapered section 208 of the coupled waveguide structure 106 may at least partially overlap with the tapered section 204 of the edge coupler waveguide structure 104. This overlap may correspond to a coupling region 210 between the edge coupler waveguide structure 104 and the coupled waveguide structure 106. The coupling region 210 is the region where the input optical signal transitions between the edge coupler waveguide structure 104 and the coupled waveguide structure 106. The coupled waveguide structure 106 may include another tapered section 212 at a second end of the coupled waveguide structure 106 opposite to the first end, and a transition section 214 between the tapered sections (208 and 212).

[0036] In some embodiments, the coupling waveguide structure 106 includes a dielectric waveguide comprising one or more dielectric materials. In some embodiments, the coupling waveguide structure 106 includes a semiconductor waveguide comprising one or more semiconductor materials. Examples of semiconductor materials include silicon (Si), germanium (Ge), and / or another semiconductor material.

[0037] The PSR waveguide structure 108 may include a tapered section 216 in the coupling region 218 between the coupled waveguide structure 106 and the PSR waveguide structure 108, which at least partially overlaps with the tapered section 212 of the coupled waveguide structure 106. The coupling region 218 is the region where the input optical signal transitions between the coupled waveguide structure 106 and the PSR waveguide structure 108. The PSR waveguide structure 108 may also include a transition section 220, a double tapered section 224, and another tapered section 226.

[0038] At the end of the PSR waveguide structure 108 opposite to the tapered section 212, the PSR waveguide structure 108 may include a through section 228 and a cross section 230 extending along the through section 228 in the x-direction. The through section 228 may include a tapered section 226 and an output section 232 optically coupled to the tapered section 226. The through section 228 may include different types of portions and / or portions arranged differently. The cross section 230 may include a tapered section 234 and an output section 236 optically coupled to the tapered section 234.

[0039] The PSR waveguide structure 108 can be configured to split the input optical signal into two orthogonally polarized optical signals: a transverse electric (TE) polarized optical signal and a transverse magnetic (TM) polarized optical signal. Then, the PSR waveguide structure 108 rotates one of the polarized optical signals, such that two separate TE polarized optical signals (e.g., a TE polarized optical signal and a rotated TE polarized optical signal) or two separate TM polarized optical signals (e.g., a TM polarized optical signal and a rotated TM polarized optical signal) are provided as the output from the PSR waveguide structure 108 at the output sections (232 and 236). For example, the TE polarized light signal can be provided to the branch 112b of the optical waveguide loop 110 of the optical multiplexing circuit 102 through the output section 232 of the through section 228, and the rotated TE polarized light signal can be provided to the branch 112a of the optical waveguide loop 110 of the optical multiplexing circuit 102 through the output section 236 of the cross section 230.

[0040] As described above, Figure 2 is provided as an example. Other examples may differ from those shown in Figure 2.

[0041] Figure 3 is a cross-sectional view of an exemplary embodiment 300 of the semiconductor photonic device 100 described herein. The exemplary cross-sectional view shown in Figure 3 is along the y-direction of line AA in Figure 1, passing through a portion of the wavelength component multiplexing circuit 118c. It should be noted that other wavelength component multiplexing circuits (e.g., wavelength component multiplexing circuits (118a, 118b, 118d, 118e and / or 118f)) may have a similar arrangement as shown in Figure 3. Additionally and / or alternatively, other wavelength component multiplexing circuits (e.g., wavelength component multiplexing circuits (118a, 118b, 118d, 118e and / or 118f)) may have a different arrangement than that shown in Figure 3.

[0042] As shown in Figure 3, the wavelength component multiplexing circuit 118c is laterally adjacent to the optical waveguide loop 110 (e.g., a branch 112a of the optical waveguide loop 110) in the y-direction. Specifically, the first side of the optical resonator structure 120c of the wavelength component multiplexing circuit 118c is laterally adjacent to the optical waveguide loop 110. The second side of the optical resonator structure 120c is laterally adjacent to the closed loop optical waveguide structure 124c (e.g., an optical delay line) of the wavelength component multiplexing circuit 118c in the y-direction. Therefore, the optical resonator structure 120c is laterally positioned between the optical waveguide loop 110 and the closed loop optical waveguide structure 124a in the y-direction. The photodetector structure 126c is located on a portion of the closed loop optical waveguide structure 124c. The resonator heating structure 122c may be located within the perimeter of the optical resonator structure 120c. Additionally and / or alternatively, the resonator heating structure 122c may be located outside the perimeter of the optical resonator structure 120c.

[0043] As further shown in Figure 3, the wavelength component multiplexing circuit 118c and the optical waveguide loop 110 may be located on the substrate layer 302 of the semiconductor photonic device 100. The substrate layer 302 may include semiconductor materials, such as silicon (Si), silicon germanium (SiGe), and / or another suitable semiconductor material.

[0044] Optical waveguide loop 110, optical resonator structure 120c, closed-loop optical waveguide structure 124c, and / or photodetector structure 126c may be contained in a dielectric region 304 above substrate layer 302. An etch stop layer 306 may be included above dielectric region 304, and another dielectric region 308 may be included above etch stop layer 306. In some embodiments, resonator heating structure 122c is located in dielectric region 308, as shown in the example in FIG3. Additionally and / or alternatively, resonator heating structure 122c may be located in dielectric region 304 and / or in another layer of semiconductor photonic device 100.

[0045] Dielectric region 304, etch stop layer 306, and dielectric region 308 may each comprise one or more dielectric materials. Examples of such dielectric materials include oxides (e.g., silicon oxide (SiO x) and / or another oxide material), undoped silicate glass (USG), boron-containing silicate glass (BSG), fluorine-containing silicate glass (FSG), extremely low dielectric constant (ELK) dielectric materials having a dielectric constant of less than about 2.5, silicon nitride (Si xN y), silicon carbide (SiC), silicon oxynitride (SiON), and / or another suitable dielectric material.

[0046] In some embodiments, the optical waveguide loop 110, the optical resonator structure 120c, the closed-loop optical waveguide structure 124c, and / or the photodetector structure 126c may be formed from the same semiconductor layer of the semiconductor photonic device 100. The optical waveguide loop 110, the optical resonator structure 120c, the closed-loop optical waveguide structure 124c, and / or the photodetector structure 126c may each include one or more semiconductor materials, such as silicon (Si), doped silicon, germanium (Ge), silicon-germanium (SiGe), group III-V semiconductor materials, and / or another suitable semiconductor material. Additionally and / or alternatively, one or more of the optical waveguide loop 110, the optical resonator structure 120c, the closed-loop optical waveguide structure 124c, and / or the photodetector structure 126c may be formed from a dielectric layer and may include one or more of the aforementioned dielectric materials and / or another suitable dielectric material.

[0047] Optical waveguide loop 110, optical resonator structure 120c, closed-loop optical waveguide structure 124c, and / or photodetector structure 126c may each have a cross-sectional profile. Two or more of the optical waveguide loop 110, optical resonator structure 120c, closed-loop optical waveguide structure 124c, and / or photodetector structure 126c may have substantially the same cross-sectional profile. For example, two or more of the optical waveguide loop 110, optical resonator structure 120c, closed-loop optical waveguide structure 124c, and / or photodetector structure 126c may have a ribbed waveguide cross-sectional profile, wherein the ridge section is contained above the slab section. As another example, two or more of the optical waveguide loop 110, optical resonator structure 120c, closed-loop optical waveguide structure 124c, and / or photodetector structure 126c may have a strip waveguide cross-sectional profile. Additionally and / or alternatively, two or more of the optical waveguide loop 110, optical resonator structure 120c, closed loop optical waveguide structure 124c, and / or photodetector structure 126c may have different cross-sectional profiles.

[0048] The photodetector structure 126c may include terminal sections 310 and 312 for facilitating the provision of electrical signals from the photodetector structure 126c. The photodetector structure 126c may generate an electrical signal based on an optical signal received at an absorption region 314 of the photodetector structure 126c. The absorption region 314 may be included on a closed-loop optical waveguide structure 124c between the terminal sections (310 and 312). The absorption region 314 is configured to convert photons of the received optical signal into electrons. The number of electrons generated may be based on the number of photons absorbed in the absorption region 314. Therefore, the amplitude of the electrical signal generated by the photodetector structure 126c (e.g., the amplitude of the current of the electrical signal, the amplitude of the voltage of the electrical signal) may be based on the intensity of the optical signal received at the photodetector structure 126c. Electrons propagate through the closed loop optical waveguide structure 124 to the terminal sections (310 and 312) corresponding to the electron collection region generated by the absorption region 314.

[0049] Absorption region 314 may include an epitaxial growth region of semiconductor material, including germanium (Ge), germanium-tin (GeSn), silicon-germanium (SiGe), indium gallium arsenide (InGaAs), and / or gallium arsenide (GaAs) and other examples. Photons of the optical signal received at photodetector structure 126c interact with electron-hole pairs in the semiconductor material of absorption region 314. This interaction causes electrons and holes to separate and migrate toward opposing terminal segments (310, 312) (e.g., opposing collection regions), thereby generating an electric field (e.g., an embedded electric field).

[0050] The portion of the photodetector structure 126c on the optical waveguide loop 110 may be doped to facilitate the flow of electrons and / or holes between the absorption region 314 and the terminal segments (310, 312). For example, the absorption region 314 may be contained on the doped regions 316 and 318 of the optical waveguide loop 110. As another example, the doped region 320 may be contained in the terminal segment 310 and may be adjacent to the doped region 316, and the doped region 322 may be contained in the terminal segment 312 and may be adjacent to the doped region 318. As another example, the doped region 324 may be contained on the doped region 320 in the terminal segment 310, and the doped region 326 may be contained on the doped region 322 in the terminal segment 312.

[0051] Doped regions (316, 320, and 324) may include semiconductor materials doped with a first doping type (e.g., n-type dopants of arsenic (As) and / or phosphorus (P), or p-type dopants of boron (B) and / or gallium (Ga), and doped regions (318, 322, and 326) may include semiconductor materials doped with a second doping type different from the first doping type. For example, doped regions (316, 320, and 324) may include n-type doped regions and doped regions (318, 322, and 326) may include p-type doped regions. Different dopant types facilitate the flow of electrons and holes from absorption region 314 to the opposite terminal segments (310 and 312).

[0052] Doped region 320 may have a higher doping concentration than doped region 316, and doped region 324 may have a higher doping concentration than doped region 320. Doped region 322 may have a higher doping concentration than doped region 318, and doped region 326 may have a higher doping concentration than doped region 322.

[0053] Metal silicate layers (328 and 330) may be included on terminal segment 310 and photodetector structure 126c 312, respectively. The metal silicate layers (328 and 330) may each comprise titanium silicate (TiSi), ruthenium silicate (RuSi), and / or another type of metal silicate material. The metal silicate layers (328 and 330) provide a transition between the semiconductor material of the closed-loop optical waveguide structure 124c and the contact structures (332 and 334) formed on the terminal segments (310 and 312) of the photodetector structure 126c, respectively. The metal silicate layers (328 and 330) enable low contact resistance between the contact structures (332 and 334) and the terminal segments (310 and 312) of the photodetector structure 126c.

[0054] In some embodiments, the contact structures (332 and 334) may each include one or more electrically conductive materials, such as tungsten (W), cobalt (Co), ruthenium (Ru), titanium (Ti), aluminum (Al), copper (Cu), and / or gold (Au), and other examples of conductive materials. The contact structures (332 and 334) may each include through-holes, contact plugs, trenches, and / or another type of conductive structure.

[0055] The contact structures (332 and 334) may be electrically and / or physically coupled to one or more metallization layers 336 in the dielectric region 308. The metallization layers 336 correspond to circuitry, enabling signals and / or power to be supplied to and / or supplied from the photodetector structure 126c and / or other devices in the semiconductor photonic device 100. Each metallization layer 336 may comprise one or more electrically conductive materials, such as tungsten (W), cobalt (Co), ruthenium (Ru), titanium (Ti), aluminum (Al), copper (Cu), and / or gold (Au), and other examples of conductive materials. Each metallization layer 336 may comprise vias, trenches, contact plugs, conductive pads, conductive pillars, and / or another type of metallization layer.

[0056] Contact structures (338 and 340) may also be included on the resonator heating structure 122c. The contact structures (338 and 340) can provide electrical input to the resonator heating structure 122c, such that the electrical input can be dissipated by the resonator heating structure 122c and converted into heat radiated to the optical resonator structure 120c to stabilize the operating temperature of the optical resonator structure 120c.

[0057] As described above, Figure 3 is provided as an example. Other examples may differ from those shown in Figure 3.

[0058] Figure 4 is a diagram of an exemplary embodiment 400 of optical signal propagation in the semiconductor photonic device 100 described herein. As shown in Figure 4, an input optical signal 402 (e.g., an unpolarized input optical signal) can be received from an optical input fiber 404 at an edge coupler waveguide structure 104. The input optical signal 402 is a WDM optical signal with random polarization, which includes TM and TE components. The input optical signal 402 can propagate from the edge coupler waveguide structure 104 to the PSR waveguide structure 108 through a coupling waveguide structure 106.

[0059] The PSR waveguide structure 108 splits the input optical signal 402 into a TE-polarized optical signal and a TM-polarized optical signal (e.g., at the double taper section 222 shown in FIG. 2). One of the TE-polarized optical signal or the TM-polarized optical signal propagates through the cross section 230 and is rotated to form a rotated polarized optical signal 406, while the other of the TE-polarized optical signal or the TM-polarized optical signal propagates through the unmodified through section 228 as a polarized optical signal.

[0060] In some embodiments, the TM-polarized optical signal propagates through cross section 230, wherein the TM-polarized optical signal is rotated to form a rotated TE-polarized optical signal, which is coupled to branch 112a of the optical waveguide loop 110 at input 116. In these embodiments, the TE-polarized optical signal propagates unmodified through through section 228 and is coupled to branch 112b of the optical waveguide loop 110 at input 116.

[0061] In some embodiments, the TE-polarized optical signal propagates through cross section 230, wherein the TE-polarized optical signal is rotated to form a rotated TM-polarized optical signal, which is coupled to branch 112a of the optical waveguide loop 110 at input 116. The TM-polarized optical signal propagates unmodifiedly via through section 228 and is coupled to branch 112b of the optical waveguide loop 110 at input 116.

[0062] The rotated polarized optical signal 406 propagates in the x-direction via branch 112a toward the loop end 114 of the optical waveguide loop 110 until it reaches the optical resonator structure 120a of the wavelength component multiplexing circuit 118a. The optical resonator structure 120a is configured to resonate with a specific wavelength component of the rotated polarized optical signal 406 to extract the data stream associated with that wavelength component. The wavelength component of the rotated polarized optical signal 406 propagates around the optical resonator structure 120a and couples to the closed loop optical waveguide structure 124a. The wavelength component of the rotated polarized optical signal 406 propagates along the closed loop optical waveguide structure 124a until it reaches the photodetector structure 126a, where it is converted into an electrical signal.

[0063] The polarized optical signal 408 propagates in the x-direction via branch 112b toward the loop end 114 of the optical waveguide loop 110, propagates via the loop end 114, and propagates via branch 112a toward the input end 116 until the polarized optical signal 408 reaches the optical resonator structure 120a. The optical resonator structure 120a is configured to resonate a specific wavelength component of the polarized optical signal 408 (e.g., the same wavelength component extracted from the rotated polarized optical signal 406) to extract the data stream associated with the wavelength component of the polarized optical signal 408. The wavelength component of the polarized optical signal 408 propagates around the optical resonator structure 120a and couples to the closed loop optical waveguide structure 124a. The wavelength component of the polarized optical signal 408 propagates along the closed loop optical waveguide structure 124a until it reaches the photodetector structure 126a, where the wavelength component of the polarized optical signal 408 is converted into an electrical signal.

[0064] In this manner, the rotating polarized light signal 406 and the polarized light signal 408 propagate in opposite directions around the optical waveguide loop 110, in opposite directions around the optical resonator structure 120a, and in opposite directions around the closed loop optical waveguide structure 124a. The polarized light signal 408 propagates through the optical resonator structure 120a in a clockwise optical propagation path, and the rotating polarized light signal 406 propagates through the optical resonator structure 120a in a counterclockwise optical propagation path. This allows a single optical resonator structure 120a to optically couple the rotating polarized light signal 406 and the polarized light signal 408 from the optical waveguide loop 110 to the closed loop optical waveguide structure 124a (e.g., in contrast to separate optical resonator structures for optically coupling each of the rotating polarized light signal 406 and the polarized light signal 408).

[0065] The length (e.g., dimension D1) of the closed-loop optical waveguide structure 124a and the position of the photodetector structure 126a along the closed-loop optical waveguide structure 124a are configured such that the propagation distance of the rotated polarized optical signal 406 (e.g., from the PSR waveguide structure 108 to the photodetector structure 126a) and the propagation distance of the polarized optical signal 408 (e.g., from the PSR waveguide structure 108 to the photodetector structure 126a) are approximately the same. This ensures that the rotated polarized optical signal 406 and the polarized optical signal 408 are synchronized at the photodetector structure 126a.

[0066] At the photodetector structure 126a, "synchronization" refers to the percentage by which the optical delay time difference between the received rotated polarized optical signal 406 and the received polarized optical signal 408 at the photodetector structure 126a is less than a threshold value of the pulse width of the input optical signal 402. For example, if the optical delay time difference between the reception of the rotated polarized optical signal 406 and the reception of the polarized optical signal 408 at the photodetector structure 126a is less than approximately 30% of the pulse width of the input optical signal 402, then the rotated polarized optical signal 406 and the polarized optical signal 408 can be synchronized. However, other threshold values ​​are also within the scope of this disclosure.

[0067] Wavelength component multiplexing circuits (118b-118f) can be configured in a similar manner to multiplex other wavelength components of the rotated polarized optical signal 406 and the polarized optical signal 408. The diameter of the optical waveguide loop 110 (denoted as dimension D7 in FIG. 4) (which may correspond to the lengths of branches 112a and 112b of the optical waveguide loop 110) can be determined to accommodate a specific number of wavelength component multiplexing circuits, such that a specific number of wavelength components can be multiplexed. In some embodiments, the diameter of the optical waveguide loop 110 is contained in the range of approximately 1000 micrometers to approximately 2000 micrometers. However, other values ​​and ranges are also within the scope of this disclosure.

[0068] As described above, Figure 4 is provided as an example. Other examples may differ from those shown in Figure 4.

[0069] Figure 5 is a diagram of an example 500 of the input optical signal 402 described herein. As described above, if the optical delay time difference between the received rotated polarized optical signal 406 and the received polarized optical signal 408 at the photodetector structure 126a is less than a threshold percentage of the optical signal pulse width (size D8) of the optical signal pulse 502 of the input optical signal 402, then the rotated polarized optical signal 406 and the polarized optical signal 408 can be synchronized. The optical signal pulse width (size D8) can be based on the data rate of the input optical signal 402. For example, if the data rate of the input optical signal 402 is approximately 50 gigabits per second (Gb / s), then the optical signal pulse width (size D8) can be approximately 20 picoseconds. If the synchronization threshold percentage is approximately 30%, then the acceptable optical delay time difference between the reception of the rotated polarized optical signal 406 and the polarized optical signal 408 can be approximately 6 picoseconds. In embodiments where the optical waveguide loop 110, optical resonator structure 120a, and closed-loop optical waveguide structure 124a are silicon (Si) waveguides, a 6-picosecond optical delay time can correspond to a maximum distance difference of approximately 600 micrometers between the propagation distance of the rotated polarized optical signal 406 (e.g., from the PSR waveguide structure 108 to the photodetector structure 126a) and the propagation distance of the polarized optical signal 408 (e.g., from the PSR waveguide structure 108 to the photodetector structure 126a). However, this is an example, and other data rates, optical signal pulse widths, threshold percentages, and optical delay times are also within the scope of this disclosure.

[0070] As described above, Figure 5 is provided as an example. Other examples may differ from those shown in Figure 5.

[0071] Figure 6 is a diagram of an exemplary embodiment 600 of a portion of the wavelength component multiplexing circuit 118 described herein. The wavelength component multiplexing circuit 118 may correspond to one and / or another of the wavelength component multiplexing circuits (118b-118f).

[0072] As shown in Figure 6, the wavelength component multiplexing circuit 118 includes a closed-loop optical waveguide structure 124 (e.g., a delay line) and a photodetector structure 126 optically coupled to the closed-loop optical waveguide structure 124. The photodetector structure 126 can be positioned along the closed-loop optical waveguide structure 124 such that the distance (dimension D3) along a first optical propagation path between the photodetector structure 126 and the position where the optical signal is coupled to the closed-loop optical waveguide structure 124 along the closed-loop optical waveguide structure 124, and the distance (dimension D4) along a second optical propagation path between the photodetector structure 126 and the position where the optical signal is coupled to the closed-loop optical waveguide structure 124 along the closed-loop optical waveguide structure 124, are unequal. The photodetector structure 126 can be positioned such that the distance (dimension D3) of the first optical propagation path is greater than the distance (dimension D4) of the second optical propagation path to compensate for the larger signal propagation distance of the optical signal propagating along the second optical propagation path of the closed loop optical waveguide structure 124 along the optical waveguide loop 110, and to compensate for the smaller signal propagation distance of the optical signal propagating along the first optical propagation path of the closed loop optical waveguide structure 124 along the optical waveguide loop 110.

[0073] A photodetector may be included in the main section 602 of the closed-loop optical waveguide structure 124. One or more extension sections (604a to 604n) may be optically coupled to the main section via transition sections 606. The length and / or number of extension sections (604a to 604n) may be selected to achieve the total length of the closed-loop optical waveguide structure 124, thereby achieving a specific amount of propagation delay and / or promoting the optical coupling of specific wavelength components to the wavelength component multiplexing circuit 118. Therefore, two or more wavelength component multiplexing circuits 118 may include closed-loop optical waveguide structures 124 with different numbers of extension sections (604a to 604n) and / or different lengths of extension sections (604a to 604n) to achieve different amounts of propagation delay and / or promote the optical coupling of different wavelength components.

[0074] In the example shown in Figure 6, the main segment 602 and the extension segments (604a to 604n) form an overall serpentine top-view shape, wherein the extension segments (604a to 604n) are stacked on top of each other. However, other arrangements of the main segment 602 and the extension segments (604a to 604n) may include different top-view shapes, including circular, elliptical, zigzag, and / or non-standard shapes.

[0075] As described above, Figure 6 is provided as an example. Other examples may differ from those shown in Figure 6.

[0076] Figures 7A-7M are diagrams of an exemplary embodiment 700 forming the semiconductor photonic device 100 (or a portion thereof) described herein. In some embodiments, one or more of the operations described in conjunction with Figures 7A-7M may be performed using one or more semiconductor processing tools (e.g., deposition tools, exposure tools, development tools, etching tools, planarization tools, ion implantation tools, annealing tools, and / or wafer / die transport tools and other examples).

[0077] Referring instead to FIG7A, a substrate 702 may be provided. The substrate 702 may include a silicon-on-insulator (SOI) substrate comprising a base layer 302 (e.g., a silicon (Si) substrate and / or another type of semiconductor substrate), a portion of a dielectric region 304 on and / or the base layer 302 (e.g., a buried oxide (BOX) or bottom oxide (BOX) layer and / or another type of insulating layer), and a semiconductor layer 704 (e.g., a silicon (Si) layer and / or another type of semiconductor layer) on and / or the portion of the dielectric region 304. Alternatively, the base layer 302 may be provided as a semiconductor wafer, and deposition tools may be used to form the portion of the dielectric region 304 on and / or the base layer 302, and the semiconductor layer 704 may be formed on and / or the dielectric region 304. The deposition tool can be used to deposit the portion of dielectric region 304 using chemical vapor deposition (CVD), physical vapor deposition (PVD), oxidation techniques (e.g., thermal oxidation), and / or other types of techniques. The deposition tool can also be used to form semiconductor layer 704 using epitaxial technology and / or another type of deposition technique.

[0078] As shown in Figures 7B and 7C, one or more photonic components of the semiconductor photonic device 100 may be formed from the semiconductor layer 704. For example, the coupling waveguide structure 106 and / or the PSR waveguide structure 108 may be formed from the semiconductor layer 704. As another example, the optical waveguide loop 110 of the optical multiplexing circuit 102 may be formed from the semiconductor layer 704. As another example, the closed loop optical waveguide structure (124a-124f) of the optical resonator structure (120a-120f) and / or the wavelength component multiplexing circuit (118a-118f) of the optical multiplexing circuit 102 may be formed from the semiconductor layer 704.

[0079] Each wavelength component multiplexer circuit can form a single optical resonator structure and a single closed-loop optical waveguide structure. For example, wavelength component multiplexer circuit 118a can form optical resonator structure 120a and closed-loop optical waveguide structure 124a, wavelength component multiplexer circuit 118b can form optical resonator structure 120b and closed-loop optical waveguide structure 124b, and so on.

[0080] As shown in Figure 7B, the optical waveguide loop 110 can be configured to include an open input end 116 and a closed loop end 114, wherein the input end 116 and the loop end 114 are located at the opposite ends of branches 112a and 112b of the optical waveguide loop 110. The optical waveguide loop 110 can be configured such that the input end 116 (e.g., the open end) of the optical waveguide loop 110 is optically coupled to the PSR waveguide structure 108.

[0081] The optical resonator structures (120a-120f) can each be formed as one side adjacent to the optical waveguide loop 110. For example, the optical resonator structures (120a-120c) can be formed as a first side adjacent to the optical waveguide loop 110 (e.g., adjacent to branch 112a), and the optical resonator structures (120d, 120e, 120f) can be formed as a second side adjacent to the optical waveguide loop 110 opposite to the first side (e.g., adjacent to branch 112b).

[0082] Closed-loop optical waveguide structures (124a-124f) can be formed adjacent to optical resonator structures (120d-120f), respectively. Therefore, optical resonator structures (120d-120f) can be formed between optical waveguide loop 110 and closed-loop optical waveguide structures (124a-124f), respectively. Furthermore, closed-loop optical waveguide structures (124a-124c) can be formed on a first side (e.g., adjacent branch 112a) of optical waveguide loop 110, and closed-loop optical waveguide structures (124d-124f) can be formed on a second side (e.g., adjacent branch 112b) of optical waveguide loop 110 opposite to the first side.

[0083] Closed-loop optical waveguide structures (124a and 124d) can be formed as the input end 116 closest to the optical waveguide loop 110. Closed-loop optical waveguide structures (124c and 124f) can be formed as the loop end 114 closest to the optical waveguide loop 110. Closed-loop optical waveguide structure 124b can be laterally formed in the x-direction between the closed-loop optical waveguide structures (124a and 124c). Closed-loop optical waveguide structure 124e can be laterally formed in the x-direction between the closed-loop optical waveguide structures (124d and 124f).

[0084] The closed-loop optical waveguide structure 124a may be formed to have a length (dimension D1) greater than the lengths (dimensions D2 and D3) of the closed-loop optical waveguide structures 124b and 124c. The closed-loop optical waveguide structure 124b may be formed to have a length (dimension D2) greater than the length (dimension D3) of the closed-loop optical waveguide structure 124c but less than the length (dimension D1) of the closed-loop optical waveguide structure 124a. The closed-loop optical waveguide structure 124c may be formed to have a length (dimension D3) smaller than the lengths (dimensions D1 and D2) of the closed-loop optical waveguide structures (124a and 124b).

[0085] The closed-loop optical waveguide structure 124d can be formed to have a length (dimension D4) greater than the length (dimension D5, dimension D6) of the closed-loop optical waveguide structures (124e and 124f). The closed-loop optical waveguide structure 124e can be formed to have a length (dimension D5) greater than the length (dimension D6) of the closed-loop optical waveguide structure 124f but less than the length (dimension D4) of the closed-loop optical waveguide structure 124d. The closed-loop optical waveguide structure 124f can be formed to have a length (dimension D6) smaller than the length (dimension D4, dimension D5) of the closed-loop optical waveguide structures (124d and 124e).

[0086] The closed-loop optical waveguide structure 124a may be formed to have a length (dimension D1) greater than the length (dimension D5, dimension D6) of the closed-loop optical waveguide structures (124e and 124f). The closed-loop optical waveguide structure 124e may be formed to have a length (dimension D5) greater than the length (dimension D3) of the closed-loop optical waveguide structure 124c and less than the length (dimension D1) of the closed-loop optical waveguide structure 124a. The closed-loop optical waveguide structure 124e may be formed to have a length (dimension D6) smaller than the length (dimension D1, dimension D2) of the closed-loop optical waveguide structures (124a and 124b).

[0087] The closed-loop optical waveguide structure 124d can be formed to have a length (dimension D4) greater than the length (dimension D2, dimension D3) of the closed-loop optical waveguide structures (124b and 124c). The closed-loop optical waveguide structure 124b can be formed to have a length (dimension D2) greater than the length (dimension D6) of the closed-loop optical waveguide structure 124f and less than the length (dimension D4) of the closed-loop optical waveguide structure 124d. The closed-loop optical waveguide structure 124c can be formed to have a length (dimension D3) smaller than the length (dimension D4, dimension D5) of the closed-loop optical waveguide structures (124d and 124e).

[0088] As shown in Figure 7C, the coupled waveguide structure 106, the PSR waveguide structure 108, the optical waveguide loop 110, the optical resonator structure (120a-120f), and / or the closed loop optical waveguide structure (124a-124f) can be formed from the same semiconductor layer 704 as the semiconductor photonic device 100. The semiconductor layer 704 can be etched based on one or more patterned masking layers to form the coupled waveguide structure 106, the PSR waveguide structure 108, the optical waveguide loop 110, the optical resonator structure (120a-120f), and / or the closed loop optical waveguide structure (124a-124f).

[0089] In some embodiments, multiple patterning and etching operations are performed to form a coupled waveguide structure 106, a PSR, a waveguide structure 108, an optical waveguide loop 110, an optical resonator structure (120a-120f), and / or a closed-loop optical waveguide structure (124a-124f) from the semiconductor layer 704. For example, a first mask layer may be patterned in a first patterning operation and used to etch the semiconductor layer 704 in a first etching operation; a second mask layer may be patterned in a second patterning operation and used to etch the semiconductor layer 704 in a second etching operation; a third mask layer may be patterned in a third patterning operation and used to etch the semiconductor layer 704 in a third etching operation, and so on. The etching operations may include dry etching operations (e.g., plasma-based etching operations, gas-based etching operations), wet chemical etching operations, and / or another type of etching operation.

[0090] Additionally and / or alternatively, one or more of the coupled waveguide structure 106, PSR waveguide structure 108, optical waveguide loop 110, optical resonator structure (120a-120f) and / or closed loop optical waveguide structure (124a-124f) may be formed by a deposited, patterned and etched dielectric layer.

[0091] As shown in Figure 7D, additional material for dielectric region 304 can be deposited around the coupled waveguide structure 106, PSR waveguide structure 108, optical waveguide loop 110, optical resonator structure (120a-120f), and / or closed loop optical waveguide structure (124a-124f). This additional material may be referred to as the shallow trench isolation (STI) portion of dielectric region 304. Deposition tools can be used to deposit the additional material for dielectric region 304 using PVD, atomic layer deposition (ALD), CVD, oxidation, and / or another suitable deposition technique. In some embodiments, after depositing the additional material for dielectric region 304, planarization tools can be used to perform a planarization operation (e.g., chemical-mechanical planarization (CMP)) to planarize dielectric region 304.

[0092] As shown in Figure 7E, different portions of the closed-loop optical waveguide structures (124a-124f) can be doped to form part of the photodetector structures (126a-126f) on the closed-loop optical waveguide structures (124a-124f). For example, the closed-loop optical waveguide structures (124a-124f) can be doped with a first doping type to form doped regions (316, 320, and / or 324). As another example, the closed-loop optical waveguide structures (124a-124f) can be doped with a second doping type to form doped regions (318, 322, and / or 326). The first and second doping types can be different doping types. For example, the doped regions (316, 320, and 324) can be doped with n-type dopant, and the doped regions (318, 322, and 326) can be doped with p-type dopant. As another example, doped regions (316, 320, and 324) can be doped with p-type dopants, and doped regions (318, 322, and 326) can be doped with n-type dopants.

[0093] In some embodiments, ions are implanted into said portions of the closed-loop optical waveguide structure (124a-124f) using an ion implantation tool to form doped regions (316-326). In these embodiments, dopant ions (e.g., n-type ions, p-type ions) are accelerated toward said portions of the closed-loop optical waveguide structure (124a-124f) and implanted into said portions of the closed-loop optical waveguide structure (124a-124f) to form doped regions (316-326). In some embodiments, the doped regions (316-326) are formed using another doping technique (e.g., diffusion).

[0094] As shown in Figure 7F, additional material for dielectric region 304 can be deposited over coupled waveguide structure 106, PSR waveguide structure 108, optical waveguide loop 110, optical resonator structure (120a-120f), and / or closed loop optical waveguide structure (124a-124f). Deposition tools can be used to deposit the additional material for dielectric region 304 using PVD, ALD, CVD, oxidation, and / or another suitable deposition technique. In some embodiments, after depositing the additional material for dielectric region 304, a planarization tool can be used to perform a planarization operation (e.g., CMP) to planarize dielectric region 304.

[0095] As shown in Figures 7G and 7H, the absorption region 314 of the photodetector structure (126a-126f) can be formed on the closed-loop optical waveguide structure (124a-124f). Forming the absorption region 314 may include forming a recess in the closed-loop optical waveguide structure (124a-124f) and forming the absorption region 314 in the recess. The recess may be formed in the portions of the doped regions (316 and 318).

[0096] In some embodiments, a pattern in the photoresist layer is used to etch the closed-loop optical waveguide structure (124a-124f) to form a recess. In these embodiments, the photoresist layer can be formed on the semiconductor photonic device 100 using a deposition tool (e.g., using spin coating and / or another suitable deposition technique). An exposure tool can be used to expose the photoresist layer to a radiation source to pattern the photoresist layer. A development tool can be used to develop and remove portions of the photoresist layer to expose the pattern. An etching tool can be used to etch the closed-loop optical waveguide structure (124a-124f) based on the pattern to form the recess. In some embodiments, the etching operation includes dry etching operations (e.g., plasma-based etching operations, gas-based etching operations), wet chemical etching operations, and / or another type of etching operation. In some embodiments, a photoresist removal tool can be used to remove the remaining portion of the photoresist layer (e.g., using chemical stripping, plasma ashing, and / or other techniques). In some embodiments, a rigid mask layer is used as an alternative technique for pattern-based recess formation.

[0097] The recess can be filled with epitaxially grown semiconductor material to form absorption regions 314 of the photodetector structures (126a-126f). The epitaxially grown semiconductor material can be a different material from the semiconductor material of the closed-loop optical waveguide structures (124a-124f). For example, the epitaxially grown semiconductor material may include germanium (Ge), while the semiconductor material of the closed-loop optical waveguide structures (124a-124f) may include doped silicon (Si). Deposition tools can be used to epitaxially grow the semiconductor material of the absorption regions 314 using epitaxial technology. Alternatively and / or, ALD, CVD, and / or another suitable deposition technique can be used to deposit the absorption regions 314.

[0098] Additional material for dielectric region 304 may be formed on semiconductor photonic device 100, including absorption region 314 above photodetector structure (126a-126f). Deposition tools may be used to deposit additional material for dielectric region 304 using PVD, ALD, CVD, oxidation and / or another suitable deposition technique.

[0099] As shown in Figure 7I, dielectric regions 304 can be etched to expose the tops of terminal segments (310 and 312) of the photodetector structures (126a-126f), and metal silicate layers (328 and 330) can be formed on the terminal segments (310 and 312), respectively. Forming the metal silicate layers (328 and 330) may include depositing layers of metallic materials (e.g., titanium (Ti), cobalt (Co), ruthenium (Ru), and / or nickel (Ni) and other examples) on the terminal segments (310 and 312) of the photodetector structures (126a-126f). Deposition tools can be used to deposit metallic materials using PVD, ALD, CVD, electroplating, and / or another suitable deposition technique. Annealing tools can be used to perform annealing operations to diffuse metallic material into the terminal sections (310 and 312) of the photodetector structures (126a-126f) to form a metal silicate layer (328 and 330).

[0100] As further shown in Figure 7I, an etch stop layer 306 may be formed on the dielectric region 304 and on the metal silicate layers (328 and 330). Deposition tools may be used to deposit the etch stop layer 306 using PVD, ALD, CVD, and / or another suitable deposition technique.

[0101] As further shown in Figure 7I, a portion of the dielectric region 308 may be formed on the etch stop layer 306. Deposition tools may be used to deposit said portion of the dielectric region 308 using PVD, ALD, CVD, and / or another suitable deposition technique. The portion of the dielectric region 308 may be formed in one or more deposition operations. In some embodiments, after depositing said portion of the dielectric region 308, a planarization operation (e.g., CMP operation) is performed using a planarization tool to planarize said portion of the dielectric region 308.

[0102] As shown in Figure 7J, resonator heating structures (122a-122f) can form wavelength component multiplexing circuits (118a-118f). In some embodiments, the resonator heating structures (122a-122f) are formed within the perimeter of the optical resonator structures (120a-120f). Alternatively and / or, one or more resonator heating structures (122a-122f) may be formed outside the perimeter of the optical resonator structures (120a-120f).

[0103] As shown in Figure 7K, the resonator heating structures (122a-122f) can be formed in the dielectric region 308. Alternatively, one or more resonator heating structures (122a-122f) can be formed in the dielectric region 304. To form the resonator heating structures (122a-122f), a recess can be formed in the dielectric region 308, and the resonator heating structures (122a-122f) can be deposited in said recess.

[0104] In some embodiments, a pattern in the photoresist layer is used to etch the dielectric region 308 to form a recess. In these embodiments, a deposition tool can be used to form the photoresist layer on the dielectric region 308 (e.g., using spin coating and / or another suitable deposition technique). An exposure tool can be used to expose the photoresist layer to a radiation source to pattern the photoresist layer. A development tool can be used to develop and remove portions of the photoresist layer to expose the pattern. An etching tool can be used to etch the dielectric region 308 based on the pattern to form a recess. In some embodiments, the etching operation includes dry etching operations (e.g., plasma-based etching operations, gas-based etching operations), wet chemical etching operations, and / or another type of etching operation. In some embodiments, a photoresist removal tool can be used to remove the remaining portion of the photoresist layer (e.g., using chemical stripping, plasma ashing, and / or other techniques). In some embodiments, a hard mask layer is used as an alternative technique for pattern-based recess formation.

[0105] Deposition tools can be used to deposit resonator heating structures (122a-122f) in depressions using CVD, PVD, ALD, electroplating, and / or another suitable deposition technique. The resonator heating structures (122a-122f) can be deposited in one or more deposition operations. In some embodiments, a seed layer is deposited first, and then the resonator heating structures (122a-122f) are deposited on the seed layer. In some embodiments, after depositing the resonator heating structures (122a-122f), a planarization operation (e.g., CMP operation) is performed using a planarization tool to planarize the resonator heating structures (122a-122f).

[0106] As shown in Figure 7L, additional material for the dielectric region 308 can be formed above the resonator heating structure (122a-122f). Deposition tools can be used to deposit the additional material for the dielectric region 308 using PVD, ALD, CVD, and / or another suitable deposition technique. The additional material for the dielectric region 308 can be formed in one or more deposition operations. In some embodiments, after a portion of the additional material for the dielectric region 308 is deposited, a planarization operation (e.g., CMP operation) is performed using a planarization tool to planarize said portion of the dielectric region 308.

[0107] As further shown in Figure 7L, contact structures (332, 334, 338, and / or 340) may be formed in and / or through dielectric region 308, etch stop layer 306, and / or dielectric region 304. Contact structures 332 and 334 may extend through dielectric region 308 and etch stop layer 306 and into dielectric region 304 and may respectively land on the metal silicon layer (338 and 340) of the photodetector structure (126a-126f). Contact structures (334 and 336) may extend into dielectric region 308 and may land on the resonator heating structure (122a-122f).

[0108] Contact structures (332, 334, 338, and / or 340) may be formed in recesses extending through dielectric region 308, etch stop layer 306, and / or dielectric region 304. In some embodiments, a pattern in the photoresist layer is used to etch dielectric region 308, etch stop layer 306, and / or dielectric region 304 to form the recesses. In these embodiments, deposition tools may be used to form the photoresist layer on dielectric region 308 (e.g., using spin coating and / or another suitable deposition technique). An exposure tool may be used to expose the photoresist layer to a radiation source to pattern the photoresist layer. A development tool may be used to develop and remove portions of the photoresist layer to expose the pattern. An etching tool may be used to etch dielectric region 308, etch stop layer 306, and / or dielectric region 304 based on the pattern to form the recesses. In some embodiments, the etching operation includes dry etching operations (e.g., plasma-based etching operations, gas-based etching operations), wet chemical etching operations, and / or another type of etching operation. In some embodiments, photoresist removal tools can be used to remove the remaining portion of the photoresist layer (e.g., using chemical stripping, plasma ashing, and / or other techniques). In some embodiments, a rigid mask layer is used as an alternative technique for pattern-based recess formation.

[0109] Deposition tools can be used to deposit contact structures (332, 334, 338, and / or 340) using CVD, PVD, ALD, electroplating, and / or another suitable deposition technique. Contact structures (332, 334, 338, and / or 340) can be deposited in one or more deposition operations. In some embodiments, a seed layer is deposited first, and the contact structure (332, 334, 338, and / or 340) is deposited on the seed layer. In some embodiments, a liner is deposited first, and the contact structure (332, 334, 338, and / or 340) is deposited on the liner. The liner may include an adhesive liner, a barrier liner, and / or another type of liner, and may include liner materials such as titanium nitride (TiN) and / or tantalum nitride (TaN) and other examples. In some implementations, after depositing the junction structures (332, 334, 338 and / or 340), a planarization operation (e.g., CMP operation) is performed using a planarization tool to planarize the junction structures (332, 334, 338 and / or 340).

[0110] As shown in Figure 7M, another portion of the dielectric region 308 may be formed on the contact structure (332, 334, 338, and / or 340). Deposition tools can be used to deposit this other portion of the dielectric region 308 using PVD, ALD, CVD, and / or another suitable deposition technique. This other portion of the dielectric region 308 can be formed in one or more deposition operations. In some embodiments, after depositing the other portion of the dielectric region 308, a planarization operation (e.g., CMP operation) is performed using a planarization tool to planarize the other portion of the dielectric region 308.

[0111] As further shown in Figure 7M, a metallization layer 336 may be formed in the dielectric region 308. A recess may be formed in the dielectric region 308, and the metallization layer 336 may be formed in the recess. One or more metallization layers 336 may be formed such that one or more metallization layers 336 fall on the contact structures (332 and / or 334) of the photodetector structures (126a-126f). Additionally and / or alternatively, one or more metallization layers 336 may be formed such that one or more metallization layers 336 fall on the contact structures (338 and / or 340) of the resonator heating structures (122a-122f).

[0112] In some embodiments, the pattern in the photoresist layer is used to etch the dielectric region 308 to form a recess. In these embodiments, a deposition tool can be used to form the photoresist layer on the dielectric region 308 (e.g., using spin coating and / or another suitable deposition technique). An exposure tool can be used to expose the photoresist layer to a radiation source to pattern the photoresist layer. A development tool can be used to develop and remove portions of the photoresist layer to expose the pattern. An etching tool can be used to etch the dielectric region 308 based on the pattern to form a recess. In some embodiments, the etching operation includes dry etching operations (e.g., plasma-based etching operations, gas-based etching operations), wet chemical etching operations, and / or another type of etching operation. In some embodiments, a photoresist removal tool can be used to remove the remaining portion of the photoresist layer (e.g., using chemical stripping, plasma ashing, and / or other techniques). In some embodiments, a hard mask layer is used as an alternative technique for pattern-based etching of the dielectric region 308.

[0113] Deposition tools can be used to deposit the metallization layer 336 using CVD, PVD, ALD, electroplating, and / or another suitable deposition technique. The metallization layer 336 can be deposited in one or more deposition operations. In some embodiments, a seed layer is deposited first, and then the metallization layer 336 is deposited on the seed layer. In some embodiments, after depositing the metallization layer 336, a planarization operation (e.g., CMP operation) is performed using a planarization tool to planarize the metallization layer 336.

[0114] As described above, Figures 7A-7M are provided as examples. Other examples may differ from those shown in Figures 7A-7M.

[0115] Figure 8 is a flowchart of an example process 800 associated with the formation of the semiconductor photonic device described herein. In some embodiments, one or more semiconductor processing tools (e.g., deposition tools, exposure tools, development tools, etching tools, planarization tools, ion implantation tools, annealing tools, wafer / die transport tools, and / or other types of semiconductor processing tools) are used to perform one or more process blocks of Figure 8.

[0116] As shown in Figure 8, process 800 may include forming an optical waveguide cloze (block 810). For example, one or more semiconductor processing tools may be used to form the optical waveguide cloze (e.g., optical waveguide cloze 110), as described herein. In some embodiments, the optical waveguide cloze is open at a first end (e.g., input 116) and closed at a second end (e.g., cloze end 114).

[0117] As further shown in Figure 8, process 800 may include forming a first optical resonator structure (block 820) adjacent to a first side of the optical waveguide loop. For example, one or more semiconductor processing tools may be used to form the first optical resonator structure (e.g., optical resonator structures 120a-120f) adjacent to a first side of the optical waveguide loop (e.g., branch 112a), as described herein.

[0118] As further shown in Figure 8, process 800 may include forming a second optical resonator structure (block 830) adjacent to a second side of the optical waveguide loop. For example, one or more semiconductor processing tools may be used to form a second optical resonator structure (e.g., optical resonator structures 120a-120f) adjacent to a second side (e.g., branch 112a) of the optical waveguide loop, as described herein.

[0119] As further shown in Figure 8, process 800 may include forming a first closed-loop optical waveguide structure (block 840) adjacent to the first optical resonator structure. For example, one or more semiconductor processing tools may be used to form the first closed-loop optical waveguide structure adjacent to the first optical resonator structure (e.g., closed-loop optical waveguide structures (124a-124f)), as described herein.

[0120] As further shown in Figure 8, process 800 may include forming a second closed-loop optical waveguide structure (block 850) adjacent to the second optical resonator structure. For example, one or more semiconductor processing tools may be used to form the second closed-loop optical waveguide structure adjacent to the second optical resonator structure (e.g., closed-loop optical waveguide structures (124a-124f)), as described herein.

[0121] As further shown in Figure 8, process 800 may include forming a first photodetector structure (block 860) on the first closed-loop optical waveguide structure. For example, one or more semiconductor processing tools may be used to form the first photodetector structure (e.g., photodetector structures (126a-126f)) on the first closed-loop optical waveguide structure, as described herein.

[0122] As further shown in Figure 8, process 800 may include forming a second photodetector structure (block 870) on the second closed-loop optical waveguide structure. For example, one or more semiconductor processing tools may be used to form the second photodetector structure (e.g., photodetector structures (126a-126f)) on the second closed-loop optical waveguide structure, as described herein.

[0123] Process 800 may include additional implementations, such as any single implementation or any combination of implementations described below and / or any combination of implementations related to one or more other processes described elsewhere herein.

[0124] In the first embodiment, forming a first closed loop optical waveguide structure includes forming a first closed loop optical waveguide structure such that a first optical resonator structure is located between a first side of the optical waveguide loop and the first closed loop optical waveguide structure, and forming a second closed loop optical waveguide structure includes forming a second closed loop optical waveguide structure such that a second optical resonator structure is located between a second side of the optical waveguide loop and the second closed loop optical waveguide.

[0125] In the second embodiment, forming a second closed loop optical waveguide structure, alone or in combination with the first embodiment, includes forming a second closed loop optical waveguide structure that is closer to the second end of the optical waveguide loop than the first closed loop optical waveguide structure, wherein the first length (e.g., dimension (D1-D6)) of the second closed loop optical waveguide structure is smaller than the second length (e.g., dimension D1-D6) of the first closed loop optical waveguide structure.

[0126] In the third embodiment, forming an optical waveguide loop, forming a first optical resonator structure, forming a first closed loop optical waveguide structure, forming a second optical resonator structure, and forming a second closed loop optical waveguide structure, either alone or in combination with one or more of the first and second embodiments, includes forming an optical waveguide loop, forming a first optical resonator structure, forming a first closed loop optical waveguide structure, forming a second optical resonator structure, and forming a second closed loop optical waveguide structure from the same semiconductor layer 704 of the semiconductor photonic device 100.

[0127] In the fourth embodiment, alone or in combination with one or more of the first to third embodiments, process 800 includes forming a third optical resonator structure (e.g., optical resonator structures 120a-120f) adjacent to the first side of the optical waveguide loop and adjacent to the first optical resonator structure, forming a third closed loop optical waveguide structure (e.g., closed loop optical waveguide structures 124a-124f) adjacent to the third optical resonator structure and adjacent to the first closed loop optical waveguide structure, and forming a third photodetector structure (e.g., photodetector structures 126a-126f) optically coupled to the third closed loop optical waveguide structure.

[0128] In the fifth embodiment, forming a third closed loop optical waveguide structure, alone or in combination with one or more of the first to fourth embodiments, includes forming a third closed loop optical waveguide structure that is closer to the second end of the optical waveguide loop than the first closed loop optical waveguide structure, wherein the first length (e.g., dimension D1-D6) of the third closed loop optical waveguide structure is less than the second length (e.g., dimension D1-D6) of the first closed loop optical waveguide structure.

[0129] While Figure 8 shows example blocks in process 800, in some embodiments, process 800 includes additional blocks, fewer blocks, different blocks, or blocks arranged differently compared to those shown in Figure 8. Alternatively, two or more blocks of process 800 may be executed in parallel.

[0130] In this manner, the photonic integrated circuit of a semiconductor photonic device includes an optical multiplexing circuit configured to use the same set of photonic components to multiplex multiple polarized optical signals. For example, a WDM optical signal can be split into two or more polarized optical signals, each carrying multiple data streams multiplexed to different wavelength components. The optical resonator structure, optical waveguide structure, and photodetector structure of the optical multiplexing circuit are configured to multiplex wavelength components from the two or more polarized optical signals, as opposed to having a separate optical resonator structure for each of the two or more polarized optical signals. The two or more polarized optical signals can propagate in opposite directions toward the optical resonator structure along the optical waveguide loop and can be optically coupled to the waveguide structure through the optical resonator structure. The length of the optical waveguide structure and the positioning of the photodetector structure along the optical waveguide structure are chosen such that the two or more polarized optical signals travel approximately the same distance to the photodetector structure, thereby synchronizing the two or more polarized optical signals at the photodetector structure.

[0131] As described in more detail above, some embodiments described herein provide a semiconductor photonic device. The semiconductor photonic device includes a beam splitter structure. The semiconductor photonic device includes an optical waveguide loop adjacent to the beam splitter structure. The semiconductor photonic device includes an optical resonator structure adjacent to the optical waveguide loop. The semiconductor photonic device includes a closed-loop optical waveguide structure adjacent to the optical resonator structure. The semiconductor photonic device includes a photodetector structure optically coupled to the closed-loop optical waveguide structure.

[0132] In some embodiments, a first branch and a second branch of the optical waveguide loop are physically coupled together at a first end of the optical waveguide loop; and wherein the first branch and the second branch are spaced apart and disconnected at a second end of the optical waveguide loop opposite to the first end. In some embodiments, a first optical propagation path along the first branch and along the closed-loop optical waveguide structure to the photodetector structure has a first distance, wherein a second optical propagation path along the second branch, through the first end, along the first branch and along the closed-loop optical waveguide structure to the photodetector structure has a second distance, and wherein the first distance and the second distance are approximately equal. In some embodiments, the first branch and the second branch are coupled to the beam splitter structure at the second end of the optical waveguide loop. In some embodiments, the optical resonator structure is located outside the perimeter of the optical waveguide loop. In some embodiments, the closed-loop optical waveguide structure is located outside the perimeter of the optical waveguide loop. In some embodiments, the optical resonator structure is located between the optical waveguide loop and the closed-loop optical waveguide structure.

[0133] As described in more detail above, some embodiments described herein provide a semiconductor photonic device. The semiconductor photonic device includes a beam splitter structure. The semiconductor photonic device includes an optical waveguide loop adjacent to the beam splitter structure, comprising a first branch coupled to a first output of the beam splitter structure at a first end of the optical waveguide loop and a second branch coupled to a second output of the beam splitter structure at the first end of the optical waveguide loop, wherein the first branch and the second branch are coupled together at a second end of the optical waveguide loop opposite to the first end. The semiconductor photonic device includes a first optical resonator structure adjacent to the first branch of the optical waveguide loop. The semiconductor photonic device includes a first closed-loop optical waveguide structure adjacent to the first optical resonator structure, wherein the first closed-loop optical waveguide structure has a first length. The semiconductor photonic device includes a first photodetector structure optically coupled to the first closed-loop optical waveguide structure. The semiconductor photonic device includes a second optical resonator structure adjacent to the first branch of the optical waveguide loop. The semiconductor photonic device includes a second closed-loop optical waveguide structure adjacent to a second optical resonator structure, wherein the second closed-loop optical waveguide structure has a second length different from a first length. The semiconductor photonic device also includes a second photodetector structure optically coupled to the second closed-loop optical waveguide structure.

[0134] In some embodiments, the first closed-loop optical waveguide structure is closer to the first end of the optical waveguide loop than the second closed-loop optical waveguide structure; and wherein the first length of the first closed-loop optical waveguide structure is greater than the second length of the second closed-loop optical waveguide structure. In some embodiments, the semiconductor photonic device further includes a third optical resonator structure adjacent to the second branch of the optical waveguide loop, a third closed-loop optical waveguide structure adjacent to the third optical resonator structure, and a third photodetector structure optically coupled to the third closed-loop optical waveguide structure, wherein the first closed-loop optical waveguide structure has a third length. In some embodiments, the first closed-loop optical waveguide structure and the third closed-loop optical waveguide structure are located outside the perimeter of the optical waveguide loop. In some embodiments, the first length of the first closed-loop optical waveguide structure and the third length of the third closed-loop optical waveguide structure are approximately equal. In some embodiments, the first closed-loop optical waveguide structure includes a main section of the first photodetector structure in the main section and one or more extended sections optically coupled to the main section. In some embodiments, the second closed loop optical waveguide structure includes another main segment of the second photodetector structure in the other main segment and one or more other extension segments optically coupled to the other main segment, wherein the first number of the one or more extension segments of the first closed loop optical waveguide structure and the second number of the one or other extension segments of the second closed loop optical waveguide structure are different numbers.

[0135] As described in more detail above, some embodiments described herein provide a method. The method includes forming an optical waveguide loop, wherein the optical waveguide loop is open at a first end and closed at a second end. The method includes forming a first optical resonator structure adjacent to the first side of the optical waveguide loop. The method includes forming a second optical resonator structure adjacent to the second side of the optical waveguide loop. The method includes forming a first closed-loop optical waveguide structure adjacent to the first optical resonator structure. The method includes forming a second closed-loop optical waveguide structure adjacent to the second optical resonator structure. The method includes forming a first photodetector structure on the first closed-loop optical waveguide structure. The method includes forming a second photodetector structure on the second closed-loop optical waveguide structure.

[0136] In some embodiments, forming the first closed-loop optical waveguide structure includes forming the first closed-loop optical waveguide structure such that the first optical resonator structure is located between the first side of the optical waveguide loop and the first closed-loop optical waveguide structure; and wherein forming the second closed-loop optical waveguide structure includes forming the second closed-loop optical waveguide structure such that the second optical resonator structure is located between the second side of the optical waveguide loop and the second closed-loop optical waveguide structure. In some embodiments, forming the second closed-loop optical waveguide structure includes forming the second closed-loop optical waveguide structure closer to the second end of the optical waveguide loop than the first closed-loop optical waveguide structure, wherein the first length of the second closed-loop optical waveguide structure is less than the second length of the first closed-loop optical waveguide structure. In some embodiments, forming the optical waveguide loop, forming the first optical resonator structure, forming the first closed-loop optical waveguide structure, forming the second optical resonator structure, and forming the second closed-loop optical waveguide structure includes: forming the optical waveguide loop, the first optical resonator structure, the first closed-loop optical waveguide structure, the second optical resonator structure, and the second closed-loop optical waveguide structure from the same semiconductor layer of the semiconductor photonic device. In some embodiments, the method further includes: forming a third optical resonator structure adjacent to the first side of the optical waveguide loop and adjacent to the first optical resonator structure; forming a third closed-loop optical waveguide structure adjacent to the third optical resonator structure and adjacent to the first closed-loop optical waveguide structure; and forming a third photodetector structure optically coupled to the third closed-loop optical waveguide structure. In some embodiments, forming the third closed-loop optical waveguide structure includes: forming the third closed-loop optical waveguide structure closer to the second end of the optical waveguide loop than the first closed-loop optical waveguide structure, wherein the first length of the third closed-loop optical waveguide structure is less than the second length of the first closed-loop optical waveguide structure.

[0137] The terms "approximately" and "substantially" can indicate that the value of a given quantity varies within 5% of that value (e.g., ±1%, ±2%, ±3%, ±4%, ±5% of the stated value). These values ​​are merely examples and are not intended to be limiting. It should be understood that, according to this disclosure, the terms "approximately" and "substantially" can refer to a percentage of the value of a given quantity.

[0138] The foregoing has outlined features of several embodiments to enable those skilled in the art to better understand the nature of this disclosure. Those skilled in the art should understand that they can readily use this disclosure as a basis for designing or modifying other processes and structures to achieve the same purposes or attain the same advantages as the embodiments described herein. Those skilled in the art should also recognize that such equivalent constructions do not depart from the spirit and scope of this disclosure, and that various changes, substitutions, and modifications can be made herein without departing from the spirit and scope of this disclosure.

[0139] 100: Semiconductor photonic devices 102: Optical multiplexing circuit 104: Edge Coupler Waveguide Structure 106: Coupled waveguide structure 108: Polarization beam splitter and rotator (PSR) waveguide structure 110: Optical waveguide loop 112a, 112b: Branches 114: Loop End 116: Input terminal 118, 118a, 118b, 118c, 118d, 118e, 118f: Wavelength component multiplexing circuit 120a, 120b, 120c, 120d, 120e, 120f: Optical resonator structures 122a, 122b, 122c, 122d, 122e, 122f: Resonator heating structure 124, 124a, 124b, 124c, 124d, 124e, 124f: Closed-loop optical waveguide structures 126, 126a, 126b, 126c, 126d, 126e, 126f: Photodetector structure 200, 500: Examples 202, 204, 208, 212, 216, 226, 234: Gradual shortening sections 206, 214, 220, 606: Transition Sections 210, 218: Coupling region 222, 224: Double tapering sections 228: Through Section 230: Intersection 232, 236: Output sections 300, 400, 600, 700: Exemplary Implementation Schemes 302: Basal layer 304, 308: Dielectric region 306: Etching Stop Layer 310, 312: Terminal Sections 314: Absorption Region 316, 316-326, 318, 320, 322, 324, 326: Doped regions 328, 330, 338, 340: Metal silicide layers 332, 334, 336, 338, 340: Contact structure 336: Metallization layer 402: Input optical signal 404: Optical input fiber 406: Rotationally Polarized Light Signal 408: Polarized light signal 502: Optical signal pulse 602: Main Section 604a, 604n: Extended sections 702: Base 704: Semiconductor layer 800: Process 810, 820, 830, 840, 850, 860, 870: Square AA: Line D1, D2, D3, D4, D5, D6, D7, D8: Dimensions x, y, z: Direction

Claims

1. A semiconductor photonic device, comprising: Spectrometer structure; An optical waveguide loop is adjacent to the beam splitter structure; An optical resonator structure is adjacent to the optical waveguide loop; A closed-loop optical waveguide structure, adjacent to the optical resonator structure, the closed-loop optical waveguide structure including a main section and one or more extension sections optically coupled to the main section; and a photodetector structure optically coupled to the closed-loop optical waveguide structure and located in the main section.

2. The semiconductor photonic device of claim 1, wherein a first branch and a second branch of the optical waveguide loop are physically coupled together at a first end of the optical waveguide loop; and wherein the first branch and the second branch are spaced apart and disconnected at a second end of the optical waveguide loop opposite to the first end.

3. The semiconductor photonic device of claim 2, wherein a first optical propagation path along the first branch and along the closed loop optical waveguide structure to the photodetector structure has a first distance, wherein a second optical propagation path along the second branch, through the first end, along the first branch and along the closed loop optical waveguide structure to the photodetector structure has a second distance, and wherein the first distance and the second distance are equal.

4. The semiconductor photonic device of claim 2, wherein the first branch and the second branch are coupled to the beam splitter structure at the second end of the optical waveguide loop.

5. The semiconductor photonic device of claim 1, wherein the optical resonator structure is located outside the perimeter of the optical waveguide loop.

6. A semiconductor photonic device, comprising: Spectrometer structure; An optical waveguide loop, adjacent to the beam splitter structure, includes: a first branch coupled to a first output of the beam splitter structure at a first end of the optical waveguide loop; and a second branch coupled to a second output of the beam splitter structure at the first end of the optical waveguide loop, wherein the first branch and the second branch are coupled together at a second end of the optical waveguide loop opposite to the first end; a first optical resonator structure adjacent to the first branch of the optical waveguide loop; a first closed-loop optical waveguide structure adjacent to the first optical resonator structure, the first closed-loop optical waveguide structure including a main section and one or more extension sections optically coupled to the main section, wherein the first closed-loop optical waveguide structure has a first length; a first photodetector structure optically coupled to the first closed-loop optical waveguide structure and located in the main section; and a second optical resonator structure adjacent to the first branch of the optical waveguide loop. A second closed-loop optical waveguide structure is adjacent to the second optical resonator structure, wherein the second closed-loop optical waveguide structure has a second length different from the first length; and a second photodetector structure is optically coupled to the second closed-loop optical waveguide structure.

7. The semiconductor photonic device of claim 6, wherein the first closed-loop optical waveguide structure is closer to the first end of the optical waveguide loop than the second closed-loop optical waveguide structure; and wherein the first length of the first closed-loop optical waveguide structure is greater than the second length of the second closed-loop optical waveguide structure.

8. The semiconductor photonic device of claim 6, further comprising: The third optical resonator structure is adjacent to the optical waveguide loop and the second branch; A third closed-loop optical waveguide structure is adjacent to the third optical resonator structure, wherein the third closed-loop optical waveguide structure has a third length; and a third photodetector structure is optically coupled to the third closed-loop optical waveguide structure.

9. The semiconductor photonic device of claim 6, wherein the second closed-loop optical waveguide structure comprises: The second photodetector structure is located in another main section; and one or more other extension segments optically coupled to the other main segment, wherein the first number of the one or more extension segments of the first closed loop optical waveguide structure is different from the second number of the one or more other extension segments of the second closed loop optical waveguide structure.

10. A method for forming a semiconductor photonic device, comprising: An optical waveguide loop is formed, wherein the optical waveguide loop is open at a first end and closed at a second end; a first optical resonator structure is formed adjacent to the first side of the optical waveguide loop; a second optical resonator structure is formed adjacent to the second side of the optical waveguide loop; a first closed loop optical waveguide structure is formed adjacent to the first optical resonator structure, wherein the first closed loop optical waveguide structure includes a main section and one or more extension sections optically coupled to the main section; a second closed loop optical waveguide structure is formed adjacent to the second optical resonator structure; a first photodetector structure is formed on the first closed loop optical waveguide structure, wherein the first photodetector structure is in the main section; and a second photodetector structure is formed on the second closed loop optical waveguide structure.

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