Heating device and plasma treatment device

Abstract

This invention discloses a heating device and its plasma treatment apparatus. The heating device comprises: a heater base with a plurality of horizontally distributed heating elements disposed therein; multiple first heating element groups consisting of N heating elements connected in series; and multiple second heating element groups consisting of M heating elements, where M < N. At least one end of each first and second heating element group extends downward through the heater base via a power input line for electrical connection to the corresponding output end of a drive module. The total number of heating elements in the multiple first heating element groups is greater than the total number of heating elements in the multiple second heating element groups. Its advantage is that, even with an increased number of heating areas, this heating device can still quickly and accurately control the temperature of the area to be heated.

Description

Technical Field

[0001] This invention relates to the field of semiconductor equipment, and more specifically to a heating device and its plasma processing device. Prior Technology

[0002] Multi-zone temperature control technology is widely used in various technical fields, such as chemical engineering, biology, pharmaceuticals, and integrated circuits. However, with the continuous advancement of technology nodes, multi-zone temperature control technology faces increasing challenges. For example, in the field of integrated circuit manufacturing, with the rapid development of semiconductor technology, the critical dimensions of wafer processing are constantly decreasing, while the size of wafers is constantly increasing. To ensure wafer quality, the process requirements for semiconductors are becoming increasingly stringent. As is well known, a typical wafer requires thousands of process steps from silicon wafer to final packaging, and these multiple process steps inevitably create complexity. Throughout the entire process, precise control of the wafer surface temperature is crucial. With the increasing integration of devices, the demand for temperature control accuracy and regionalized control in the wafer processing process is becoming increasingly higher.

[0003] In practical applications, due to factors such as equipment hardware and process requirements, the temperature control needs of different areas on the wafer surface often vary. To ensure process stability, existing semiconductor processing equipment requires temperature compensation for the wafer support pads that hold the wafers, thereby ensuring that processing requirements are met. Currently, a common heating compensation scheme involves dividing a complete processing area on the wafer support pad into multiple smaller heating zones, and implementing one-to-one direct control or one-to-many cyclic control for each zone, using drive signals of varying intensities to adjust the temperature of specific heating zones. Combined with temperature sensing solutions and automatic control equipment, temperature control during the process can be achieved. As semiconductor manufacturing processes continue to advance, the requirements for temperature control also increase, necessitating the division of heating zones into smaller areas and the arrangement of more control units on the same wafer support pad area. However, the temperature compensation schemes of existing heating devices are no longer adequate for advanced semiconductor processing; therefore, improvements to existing equipment are necessary.

[0004] It is understood that the above statements provide only background information in relation to the present invention and do not necessarily constitute prior art. Summary of the Invention

[0005] Based on the foregoing technical problems, the object of the present invention is to provide a heating device and its plasma processing device. The heating device includes multiple heating elements for heating different regions, uses a smaller heating area as the basic environment to decouple the heating system, forms a first heating element group composed of multiple mutually connected heating elements in series, the first heating element group and the second heating element group work independently of each other, integrates the one-to-one and one-to-many control logic electric heating control methods, can control multiple heating elements in parallel and make them execute the heating scheme synchronously. When the number of heating regions increases, this heating device can still ensure the rapid and accurate adjustment of temperature control, and at the same time can effectively reduce the number of required power input lines, which helps to achieve the balance between control accuracy and response time, and then can quickly and accurately achieve the temperature control of the region to be heated.

[0006] To achieve the above object, the present invention is realized through the following technical solutions:

[0007] A heating device, comprising: A heater body, in which multiple heating elements are arranged horizontally. Different heating elements are used to heat different regions above the heater body; Multiple first heating element groups composed of N mutually connected heating elements in series; Multiple second heating element groups composed of M heating elements, where M < N; at least one end of each of the first heating element groups and the second heating element groups extends downward through the heater body through a power input line for electrically connecting to the corresponding output end of the driving module, Where the number of the first heating element groups is less than the number of the second heating element groups, and the total number of heating elements in the multiple first heating element groups is greater than the total number of heating elements in the multiple second heating element groups.

[0008] A plasma processing device, including a cavity and a base located at the bottom inside the cavity. Above the base, there is the aforementioned heating device and a wafer support disk located above the heating device. A coolant channel is provided in the base for maintaining the base at the process temperature. The plasma processing device further includes: At least one driving module is located below the base, which includes multiple first driving output ends and second driving output ends. Each first driving output end outputs heating power to one of the multiple first heating element groups, and each second driving output end outputs heating power to one of the multiple second heating element groups. The multiple first driving output ends and the multiple second driving output ends output heating power to the first heating element group and the second heating element group connected thereto simultaneously.

[0009] Optional, also includes: At least one control module is connected to the drive module, and the control module outputs control signals to the drive module, which can make the heating elements in the first heating element group and the heating elements in the second heating element group have different temperatures.

[0010] Optionally, the control module outputs a first set of heating power parameters to the drive module in the first process step, and outputs a second set of heating power parameters to the drive module in the second process step.

[0011] In different process steps, the heating power output from the multiple second drive output terminals of the drive module is distributed differently.

[0012] Optional, also includes: A sensing element is used to monitor the state of the area heated by the heating element and send the monitored state information to the control module.

[0013] Optionally, the first drive output terminal and the second drive output terminal of the drive module are disposed on the electrical substrate.

[0014] Optionally, the duty cycle of the first drive output terminal is in the range of 0~100%; The duty cycle range of the second drive output terminal is 0~100%.

[0015] Optionally, the current flowing through the first drive output terminal is less than or equal to 100 milliamperes; The current flowing through the second drive output terminal is less than or equal to 100 milliamperes.

[0016] Optionally, the base further includes a cooling gas channel that vertically penetrates the base and the heater body, and at least one heating element in the second heating element group corresponds to the position of the cooling gas channel.

[0017] Optionally, the wafer support disk is circular and used to support the wafer to be processed, and the number of heating elements in the second heating element group has different distributions in different azimuth regions of the wafer support disk.

[0018] The present invention has the following advantages compared with the prior art: In a heating device and its plasma processing apparatus according to the present invention, the heating device includes multiple heating elements for heating different areas. Using a smaller heating area as the base environment, the heating system is decoupled. A first heating element group is formed by multiple heating elements connected in series. The first heating element group and a second heating element group operate independently, integrating one-to-one and one-to-many control logic electric heating control methods. This allows for parallel control of multiple heating elements and synchronous execution of the heating scheme. Even with an increased number of heating areas, this heating device can still ensure rapid and accurate temperature control, while effectively reducing the number of required power input lines. This helps to achieve a balance between control accuracy and response time, thereby enabling rapid and accurate temperature regulation of the area to be heated. Simple Explanation of the Diagram

[0019] Figure 1 is a schematic diagram of a plasma treatment device according to the present invention; Figure 2 is a schematic diagram of the control of a heating device according to the present invention; Figure 3 is a schematic diagram of a first heating element assembly according to the present invention; Figure 4 is a schematic diagram of a second heating element assembly according to the present invention; Figure 5 is a schematic diagram of the heating zone division according to the present invention; Figure 6 is a schematic diagram of another heating zone division according to the present invention; Figure 7 is a schematic diagram of the composition of a drive module according to the present invention; Figures 8a-8d are schematic diagrams of the driving schemes for the four driving modules of the present invention. Implementation

[0020] To make the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, the technical solutions of the embodiments of the present invention will be clearly and completely described below with reference to the drawings. Obviously, the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those skilled in the art without making progressive efforts are within the scope of protection of the present invention.

[0021] It should be noted that, in this document, the terms "comprising," "including," "having," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or terminal device that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such a process, method, article, or terminal device. Unless otherwise specified, an element defined by the phrase "comprising..." or "including..." does not exclude the presence of additional elements in the process, method, article, or terminal device that includes said element.

[0022] It should be noted that the diagrams are all in a very simplified form and use non-precise ratios, and are only used to facilitate and clearly illustrate the purpose of the embodiments of the present invention.

[0023] This invention discloses a heating device that can be applied to environments requiring precise temperature control in multiple zones, including but not limited to biological, pharmaceutical, chemical, and integrated circuit applications.

[0024] Figure 1 shows a plasma processing apparatus according to the present invention. The apparatus includes a reaction chamber 100, which is typically made of a metallic material. A wafer transfer port is provided on the side wall of the chamber 100 for transferring wafers between the inside and outside of the chamber 100. The chamber 100 includes a base 110 located at the bottom. A heating device 120 and a wafer support disk 130 are disposed above the base 110. The wafer support disk 130 has a bearing surface on which the wafer to be processed, which is then placed inside the chamber 100, is placed. A coolant channel 111 communicating with an external cooler is provided in the base 110 to maintain the base 110 at the process temperature. A gas distribution device 140 is provided at the top of the cavity 100. Process gas from a gas delivery device is introduced into the cavity 100 via the gas distribution device 140 at the top of the cavity 100, and then distributed above the wafer. The base 110 is connected to at least one radio frequency power supply 150 via a cable. The radio frequency power supply 150 provides radio frequency power to the base 110, thereby dissociating the process gas to generate plasma for etching. The plasma contains a large number of active particles such as electrons, ions, excited-state atoms, molecules, and free radicals. These active particles can undergo various physical and / or chemical reactions with the surface of the wafer to be processed, thereby changing the morphology of the wafer and completing the processing of the wafer.

[0025] As mentioned above, with the continuous advancement of semiconductor manufacturing processes, the requirements for temperature control also increase. This necessitates dividing heating areas into smaller zones and arranging a greater number of control units on the same 130mm wafer support pad. In this situation, if existing control methods are still used, the demand for input / output control signal lines increases in a one-to-one control configuration, leading to increased circuit design complexity. Furthermore, excessive cabling also poses a higher risk of electromagnetic interference, affecting process stability and severely impacting equipment performance. One-to-many array control reduces the negative impact of electromagnetic interference by reusing cables, but this solution has a limited number of heating units that can be controlled per unit time. With an increase in heating areas, achieving timely temperature control reduces the effective working time of each heating unit, resulting in poorer temperature control performance. Therefore, existing temperature compensation control schemes are not well-suited for advanced semiconductor manufacturing processes. In centralized control schemes, with the increase in the number of heating areas, achieving rapid and accurate temperature regulation presents a trade-off between control precision and response time.

[0026] To address the aforementioned problems, this invention provides a heating device 120 (see Figures 2 to 5). This heating device 120 includes multiple heating elements for heating different areas. Using a smaller heating area 131 as the base environment, the heating system is decoupled. A first heating element group 123 is formed by multiple heating elements connected in series. The first heating element group 123 and the second heating element group 124 operate independently, integrating one-to-one and one-to-many control logic electric heating control methods. This allows for parallel control of multiple heating elements and synchronized execution of heating schemes. In practical use, the first heating element group 123 is placed in areas with lower temperature regulation requirements, while the second heating element group 124 is placed in areas with higher temperature regulation requirements or critical areas 132, thus enabling different temperature control methods to be used for different areas. Even with an increased number of heating zones 131, the heating device 120 can still ensure rapid and accurate temperature control. Furthermore, since the first heating element group 123, formed by multiple interconnected heating elements, only requires one power input terminal, and the second heating element group 124 only requires one power input terminal to connect one or more heating elements requiring fine-tuning, the number of power input lines required by the heating device 120 is effectively reduced. Fewer power input lines significantly reduce data transmission difficulty, achieving a balance between control accuracy and response time, enabling rapid and accurate temperature regulation. On the other hand, fewer power input lines and weaker coupling between the heating zones 131 reduce the design complexity of the equipment and improve the stability of the semiconductor processing technology.

[0027] Specifically, as shown in FIGS. 1 to 4, the heating device 120 includes: a heater body 121, in which a plurality of heating elements 122 are arranged horizontally, and different heating elements 122 are used to heat different areas above the heater body 121; multiple first heating element groups 123 each composed of N heating elements 122 connected in series with each other (see FIG. 3); multiple second heating element groups 124 each composed of M heating elements 122 (see FIG. 4), where M < N, and both M and N are positive integers; at least one end of each of the first heating element groups 123 and the second heating element groups 124 extends downward through the heater body 121 via a power input line for electrically connecting to the corresponding output end of the driving module 160, where the number of the first heating element groups 123 is less than the number of the second heating element groups 124, and the total number of the heating elements 122 in the multiple first heating element groups 123 is greater than the total number of the heating elements 122 in the multiple second heating element groups 124.

[0028] As can be seen from the above, the heating elements 122 in each of the first heating element groups 123 are connected in series with each other to achieve synchronous power change, and the first heating element groups 123 and the second heating element groups 124 work independently of each other. All the heating elements 122 can receive control instructions synchronously within a unit time to achieve a parallel working effect. In practical applications, the first heating element groups 123 are arranged in areas with lower temperature adjustment requirements, and the second heating element groups 124 are arranged in areas with higher temperature adjustment requirements or key areas 132, so as to adjust each area, which can not only meet the overall adjustment requirements but also improve the control accuracy and immediacy of the regulation of specific areas. Further, the number of the first heating element groups 123 of the heating device 120 is less than the number of the second heating element groups 124, and the total number of the heating elements 122 in the multiple first heating element groups 123 is greater than the total number of the heating elements 122 in the multiple second heating element groups 124 (which can cover more heating areas 131), which helps to reduce the power input lines required for the heating device 120, greatly reduces the difficulty of data transmission, and also reduces the complexity of the circuit design.

[0029] As shown in Figure 2, the plasma treatment device further includes at least one drive module 160, located below the base 110. The drive module 160 includes multiple first drive output terminals 161 and second drive output terminals 162. Each first drive output terminal 161 outputs heating power to one of the multiple first heating element groups 123, and each second drive output terminal 162 outputs heating power to one of the multiple second heating element groups 124. The multiple first drive output terminals 161 and the multiple second drive output terminals 162 simultaneously output heating power to their respective connected first heating element groups 123 and second heating element groups 124. That is, within a unit of time, all heating elements 122 in the heating area 131 can synchronously receive adjustment commands from the control command drive module 160, achieving a parallel working effect. The present invention does not limit the number of drive modules 160. The power input lines from multiple heating areas 131 can be connected to the same drive module 160 or to multiple different drive modules 160. That is, one drive module 160 can be used to drive and control the heating elements 122 of each first heating element group 123 and second heating element group 124. Of course, multiple drive modules 160 can also be set to control the heating elements 122 in one or more heating areas 131 respectively. The present invention does not limit this.

[0030] Furthermore, as shown in Figure 2, the plasma treatment device further includes at least one control module 170. The control module 170 is communicatively connected to the drive module 160. The control module 170 outputs control signals to the drive module 160, which can cause the heating elements 122 in the first heating element group 123 and the heating elements 122 in the second heating element group 124 to have different temperatures. In actual use, the drive module 160 recognizes the control signals transmitted by the control module 170 and adjusts the heating power output by its first drive output terminal 161 and / or second drive output terminal 162 according to the instructions of the control signals, so as to adjust the corresponding heating element 122. In this invention, the control module 170 and the drive module 160 can be independent control mappings, i.e., one-to-one control logic. Of course, the control module 170 and the drive module 160 can also be one-to-many logic control. When there are multiple drive modules 160, the control module 170 controls multiple drive modules 160. That is, the control module 170 can be a subsystem in a core control system or an independent control system. The control commands it issues only affect the corresponding drive module 160 and the heating area 131. This invention does not limit this.

[0031] Furthermore, as shown in Figure 2, the plasma processing device also includes a sensing element 180, which is used to monitor the state of the area 131 heated by the heating element 122 and send the monitored state information to the control module 170 so that the control module 170 can monitor the state of the heating area 131.

[0032] Furthermore, the plasma treatment device also includes a control terminal, which is located outside the cavity 100. The control terminal and the control module 170 are connected via an optical coupler, enabling the control terminal to monitor control information and issue dynamic adjustment commands. After receiving the real-time adjustment command sent by the control terminal, the control module 170 transmits the control loop information to the drive module 160. The drive module 160 adjusts the start-up state of each heating element 122 based on the control loop information, so that each heating area 131 of the heater substrate 121 presents the geometric layout required by the control algorithm. At the same time, the sensing element 180 can also feed back the key physical quantities of the monitored heating area 131 status to the control module 170 and the control terminal via electrical signals. Through the joint processing and analysis of the control module 170 and / or the control terminal, the real-time situation inside the cavity 100 during the process can be accurately grasped, providing a basis for the adjustment of the dynamic control algorithm of each heating area 131, forming a stable closed-loop operation.

[0033] In practical applications, the wafer support disk 130 above the heater substrate 121 can be divided into multiple heating regions 131 (see Figures 5 and 6). Heating elements 122 of multiple first heating element groups 123 and second heating element groups 124 are respectively arranged in each heating region 131, enabling independent control of the heating process in multiple regions. The power input lines from the heating elements 122 in different regions are physically isolated to avoid crosstalk between the heating circuits of different regions. For example, in one embodiment, the heating device 120 includes 7 first heating element groups 123 and 30 second heating element groups 124. Each first heating element group 123 includes 10 heating elements 122 connected in series, and each second heating element group 124 includes 1 heating element 122. Each heating element 122 corresponds to heating one region. The multiple first heating element groups 123 and second heating element groups 124 together constitute a heating matrix of 100 regions. By placing multiple first heating element groups 123 in areas with lower temperature control requirements and multiple second heating element groups 124 in areas with higher temperature control requirements, the number of power input lines required by the heating device 120 can be reduced while meeting the heating needs of different areas of the wafer. In this embodiment, power control of 100 heating elements 122 can be achieved through 37 power input lines. It is understood that the second heating element group 124 may contain one heating element 122, thereby achieving fine temperature control of a single heating area 131, or the second heating element group 124 may contain at least two heating elements 122 to achieve precise temperature control of a small area.

[0034] It should be noted that the present invention does not limit the division of the heating region 131. In practical use, it can be divided based on quadrants (see Figure 5). Each first heating element group 123 and the second heating element group 124 is respectively set in each quadrant region, and each quadrant region can be further subdivided into smaller heating regions 131. Furthermore, the number of heating regions 131 is greater than or equal to two, so as to achieve zoned control of wafer heating. Each heating region 131 can be explicitly distinguished by physical structure (such as heat insulation material, grooves, etc.), or the electrical connection can be separated by decoupled logic design to ensure that each quadrant is independently controlled during the heating process, thereby meeting process requirements. On the other hand, the present invention does not limit the size of the heater substrate 121. The heater substrate 121 can be 8-inch, 12-inch, or other mainstream process sizes.

[0035] Figure 6 shows a schematic diagram of the heating region 131 in the wafer support disk 130 above the heater substrate 121 in one embodiment. The wafer support disk 130 includes multiple heating regions 131. Regions with significant temperature control requirements or those affecting the manufacturing process are designated as critical regions 132. A second heating element group 124 is arranged in the critical region 132. A one-to-one control logic drive module 160 (or one-to-many control logic) can be used for the second heating element group 124 to make the control frequency of the second heating element group 124 different from that of other regions, thereby achieving precise temperature control of the critical region 132 and ensuring the immediacy of the control. For example, as shown in Figure 1, the base 110 also includes a cooling gas channel that vertically penetrates the base 110 and the heater substrate 121. At least one heating element 122 in the second heating element group 124 corresponds to the position of the cooling gas channel. Due to the cooling effect of the cooling gas channel, the temperature of its corresponding area is significantly abnormal compared with other areas. By setting a second heating element group 124 in the corresponding area, the temperature of that area can be individually controlled.

[0036] In this embodiment, the wafer support disk 130 used to support the wafer to be processed is circular, and the number of heating elements 122 in the second heating element group 124 is different in different azimuth angle regions of the wafer support disk 130. The second heating element group 124 in each azimuth angle can be selected with different fine adjustment combinations according to the temperature distribution of different processes.

[0037] Furthermore, the control module 170 can enable different heating power parameters for different process steps. For example, the control module 170 outputs a first set of heating power parameters to the drive module 160 in the first process step and a second set of heating power parameters to the drive module 160 in the second process step. In different process steps, the heating power distribution output by the multiple second drive output terminals 162 of the drive module 160 is different, that is, the multiple second heating element groups 124 have different heating powers, so as to achieve differentiated adjustment of the temperature state of each heating region 131. As shown in Figure 6, in one embodiment, a second heating element group 124 is provided in each of the critical regions 1G1 to 4G4, and each heating element 122 of the first heating element group 123 is provided in other heating regions 131. In the first process step, the critical regions 1G1 and 2G2 are precisely temperature-adjusted, while the heating power of critical regions 3G3 and 4G4 and each of the first heating element groups 123 is made the same. Although critical regions 3G3 and 4G4 have hardware structures capable of fine-tuning their temperature, this fine-tuning is not performed at this stage. In the second process step, critical regions 2G2, 3G3, and 4G4 are fine-tuned, while the power parameters of critical region 1G1 are made the same as the power parameters of each of the first heating element groups 123, thus achieving synchronous temperature adjustment.

[0038] Furthermore, in this embodiment, the drive module 160 is composed of one or more programmable electrical switches that can be controlled to open and close. Each electrical switch can be connected to the first drive output terminal 161 or the second drive output terminal 162 (see Figure 7). The first drive output terminals 161 and second drive output terminals 162 and electrical switches of all drive modules 160 belonging to the same processing machine are placed on one or more electrical substrates 163, which are located below the base 110. The heating power value output by each drive output terminal of the drive module 160 is generated by the control module 170 based on an instant response algorithm. The electrical substrate 163 is pre-designed with a wire array, i.e., electrical switches, according to the control requirements, to ensure that each control node on the electrical substrate 163 can be interconnected or decoupled, thereby realizing dynamic adjustment of the control mode of the heating area 131 based on the process execution status. Based on the opening and closing of each electrical switch, different drive output terminals are driven, i.e., the electrical substrate 163 has multiple output states, thereby forming different heating control schemes to realize the control of different heating elements 122. Figures 8a-8d show schematic diagrams of four heating control schemes. The electrical board 163 is externally connected to each first drive output terminal 161 and second drive output terminal 162. Each drive output terminal is connected to each heating element 122 through each power input line. The connection in the figure is an electrical logic path formed according to the control command of the control module 170, so as to drive different drive output terminals, and thus drive different heating elements 122.

[0039] Optionally, the duty cycle range of the first drive output terminal 161 of the drive module 160 is 0~100%; the duty cycle range of the second drive output terminal 162 is 0~100%. That is, the percentage of working time of each heating element 122 corresponding to the first drive output terminal 161 and the second drive output terminal 162 in the entire working cycle is 0~100%. In practical applications, the start-up and shutdown time of the heating element 122 in a specific area can be set according to requirements. Further optionally, the current flowing through the first drive output terminal 161 is less than or equal to 100 milliamperes; the current flowing through the second drive output terminal 162 is less than or equal to 100 milliamperes. Correspondingly, the required device size can be minimized, which helps to integrate it into the heating device 120. Of course, the current range flowing through the first drive output terminal 161 and the second drive output terminal 162 is not limited to the above. In other embodiments, other data ranges may be used, and the present invention does not limit this.

[0040] In summary, the heating device 120 and its plasma processing apparatus of the present invention include multiple heating elements 122 for heating different areas. Using a smaller heating area 131 as the base environment, the heating system is decoupled. Multiple interconnected heating elements 122 form a first heating element group 123. The first heating element group 123 and the second heating element group 124 operate independently, integrating one-to-one and one-to-many control logic electric heating control methods. This allows for parallel control of multiple heating elements 122 and synchronous execution of heating schemes. Even with an increased number of heating areas 131, the heating device 120 can still ensure rapid and accurate temperature control, while effectively reducing the number of required power input lines. This helps achieve a balance between control accuracy and response time, enabling rapid and accurate temperature regulation of the area to be heated 131. Furthermore, the heating device 120 requires fewer power input lines, significantly reducing the integration difficulty of the components.

[0041] Although the present invention has been described in detail through the preferred embodiments above, it should be understood that the above description should not be considered as a limitation of the present invention. Various modifications and substitutions to the present invention will be apparent to those skilled in the art after reading the above. Therefore, the scope of protection of the present invention should be defined by the appended claims.

[0042] 100: Cavity 110: Base 111: Coolant passage 120: Heating device 121: Heater substrate 122: Heating element 123: First heating element group 124: Second heating element group 130: Wafer support disk 131: Heating area 132: Key Area 140: Gas distribution device 150: Radio Frequency Power Supply 160: Drive Module 161: First drive output terminal 162: Second drive output terminal 163: Electrical board 170: Control Module 180: Sensing element G1: Key Area 1 G2: Key Area 2 G3: Key Area 3 G4: Key Area 4

Claims

1. A heating device, comprising: a heater base, wherein a plurality of horizontally distributed heating elements are disposed in the heater base, and different heating elements are used to heat different areas above the heater base; A first heating element group consisting of multiple sets of N heating elements connected in series; Multiple groups of second heating elements, each consisting of M heating elements, where M < N; at least one end of each of the first and second heating element groups extends downward through the heater base via a power input line for electrical connection to the corresponding output terminal of the drive module; each heating element in the first and second heating element groups can receive control commands synchronously to achieve parallel operation; the number of first heating element groups is less than the number of second heating element groups, and the total number of heating elements in the multiple first heating element groups is greater than the total number of heating elements in the multiple second heating element groups.

2. A plasma processing apparatus, comprising a cavity and a base located at the bottom of the cavity, wherein a heating device as described in claim 1 and a wafer support disk located above the heating device are disposed above the base, and a coolant channel is provided in the base for maintaining the base at a process temperature, the plasma processing apparatus further comprising: At least one drive module is located below the base, and includes a plurality of first drive output terminals and second drive output terminals. Each first drive output terminal outputs heating power to one of the plurality of first heating element groups, and each second drive output terminal outputs heating power to one of the plurality of second heating element groups. The plurality of first drive output terminals and the plurality of second drive output terminals simultaneously output heating power to their respective connected first heating element groups and second heating element groups.

3. The plasma treatment apparatus as claimed in claim 2, further comprising: At least one control module is connected to the drive module, and the control module outputs control signals to the drive module, which can cause the heating elements in the first heating element group and the heating elements in the second heating element group to have different temperatures.

4. The plasma treatment apparatus as claimed in claim 3, wherein, The control module outputs a first set of heating power parameters to the drive module in the first process step, and outputs a second set of heating power parameters to the drive module in the second process step. In different process steps, the heating power distribution output by the plurality of second drive output terminals of the drive module is different.

5. The plasma processing apparatus as claimed in claim 3 further comprises: a sensing element for monitoring the state of the area heated by the heating element and sending the monitored state information to the control module.

6. The plasma treatment apparatus as claimed in claim 2, wherein, The first drive output terminal and the second drive output terminal of the drive module are disposed on the electrical substrate.

7. The plasma treatment apparatus as claimed in claim 2, wherein, The duty cycle range of the first drive output terminal is 0~100%; the duty cycle range of the second drive output terminal is 0~100%.

8. The plasma treatment apparatus as claimed in claim 2, wherein, The current flowing through the first drive output terminal is less than or equal to 100 milliamperes; the current flowing through the second drive output terminal is less than or equal to 100 milliamperes.

9. The plasma treatment apparatus as claimed in claim 2, wherein, The base also includes a cooling gas channel that vertically penetrates the base and the heater base, and the heating element in at least one second heating element group corresponds to the position of the cooling gas channel.

10. The plasma processing apparatus as claimed in claim 2, wherein, The wafer support disk is circular and is used to support the wafer to be processed. The number of heating elements in the second heating element group is distributed differently in different azimuth regions of the wafer support disk.

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