Plasma source and substrate processing apparatus

Abstract

The present invention provides a plasma source, which may include: a reaction body, formed by combining a plurality of body portions, wherein a gas diffusion space is formed inside the body portions and is formed by a single component so that the inner surface of the gas diffusion space has a continuous surface, and one or more insulating portions are formed between the plurality of body portions, and the annular channel forming a closed loop shape and capable of initiating process gas is said to be a ring channel; a magnetic core portion, formed to surround at least a portion of the body portions; a winding portion, receiving power from a power supply portion to induce magnetic force in the magnetic core portion; and a cooling medium flow portion, formed in at least a portion of the body portions, for flowing cooling medium.

Description

Technical Field

[0001] This invention relates to a semiconductor manufacturing technology, and more specifically, to a plasma source, a plasma source element, and a substrate processing apparatus utilizing the plasma source. Prior Technology

[0002] In substrate processing apparatuses used to form semiconductor devices, research is underway on apparatuses and processes that do not directly form plasma within the process chamber, but instead utilize plasma source elements (e.g., remote plasma generators) outside the process chamber to supply activated reactants (e.g., free radicals) to perform substrate processing. Using such a remote plasma generator, the desired reactants can be generated and supplied to the process chamber. Since plasma is not directly formed within the process chamber, plasma damage on the substrate can be prevented.

[0003] To reduce the path of free radicals generated at the remote plasma generator to the substrate, a structure integrating the plasma source element into the jet section of the process chamber is being investigated. This structure increases the activation rate of free radicals supplied from the plasma source element to the substrate, thereby improving process efficiency.

[0004] In addition, cooling structures are being studied to improve the plasma efficiency of this plasma source. Summary of the Invention

[0005] The Problem to be Solved The present invention aims to solve the above-mentioned problems. According to a technical issue of the present invention, a plasma source is provided that increases the plasma generation area and is integrally formed to simplify assembly.

[0006] Furthermore, a plasma source and a substrate processing apparatus utilizing the plasma source are provided, wherein the temperature of the plasma source is controlled to reduce plasma damage on the substrate and to improve the process efficiency during substrate processing. However, this problem is exemplary and should not be construed as limiting the scope of the present invention.

[0007] Problem-solving methods To address the aforementioned technical problem of the present invention, a plasma source according to the present invention may include: a reaction body, formed by combining a plurality of body portions, wherein a gas diffusion space is formed inside the body portions and is formed by a single component so that the inner surface of the gas diffusion space has a continuous surface; one or more insulating portions are formed between the plurality of body portions; and the gas diffusion spaces within the plurality of body portions are interconnected to form a closed-loop shape and an annular channel for initiating process gas; a magnetic core portion, formed to surround at least a portion of the body portions; a winding portion, configured to wind the magnetic core portion and receive power from a power supply portion to induce magnetic force within the magnetic core portion; and a cooling medium flow portion, formed in at least a portion of the body portions, for allowing cooling medium to flow.

[0008] According to a portion of the embodiments of the present invention, the cooling medium flow section may include: a cooling tank section formed in the main body section; and a cover section covering the cooling tank section.

[0009] According to a portion of the embodiments of the present invention, the main body portion is formed by a first region having a first height and a first width and a second region having a second height and a second width; the first height is greater than the second height and the first width is greater than the second width; the magnetic core portion is configured to surround the second region of the main body portion, and the cooling medium flow portion may be formed in the first region of the main body portion.

[0010] According to a partial embodiment of the present invention, the cooling medium flow section is formed on one of the walls surrounding the main body; a refrigerant inlet and a refrigerant outlet may be formed in the main body, the refrigerant inlet being connected to one end of the cooling medium flow section, and the refrigerant outlet being connected to the other end of the cooling medium flow section.

[0011] According to a portion of the embodiments of the present invention, the main body portion may be formed from a single component, such that the inner surfaces of the cooling medium flow portion have mutually continuous surfaces.

[0012] According to a portion of the present invention, the cooling medium flow section may be formed in a shape that at least partially surrounds the gas diffusion space in at least a portion of the main body.

[0013] According to a portion of the present invention, the main body portion is formed by a first region having a first height and a first width and a second region having a second height and a second width; the first height is greater than the second height and the first width is greater than the second width; the magnetic core portion may be configured to surround the second region of the main body portion.

[0014] According to a portion of the embodiments of the present invention, the cooling medium flow section in the first region may be formed in a shape that at least partially surrounds the gas diffusion space.

[0015] According to a portion of the embodiments of the present invention, the cooling medium flow section in the second region may be shaped to at least partially surround the gas diffusion space.

[0016] According to a portion of the present invention, at least one air intake portion is formed on the upper wall or side wall of the main body portion, and at least one opening portion may be formed on the lower wall of the main body portion.

[0017] According to a partial embodiment of the present invention, a refrigerant inlet and a refrigerant outlet may be formed in the main body portion, the refrigerant inlet being connected to one end of the cooling medium flow portion, and the refrigerant outlet being connected to the other end of the cooling medium flow portion.

[0018] According to a portion of the embodiments of the present invention, the plasma source may include an exhaust plate having an exhaust port to allow process gases initiated in the reaction body to be discharged to the lower portion, and is combined with the lower portion of the reaction body such that the exhaust port is in communication with the at least one opening.

[0019] According to some embodiments of the present invention, the exhaust plate may be formed using an insulating material.

[0020] According to a portion of the embodiments of the present invention, a source insulation component may be incorporated between the reaction body and the exhaust plate.

[0021] To address the aforementioned technical problem of the present invention, a substrate processing apparatus according to the present invention may include: a process chamber forming a reaction space inside; a substrate support portion attached to the lower part of the process chamber to support the substrate within the reaction space; a plasma source element attached to the upper part of the process chamber, and having one or more plasma sources disposed thereon; and a gas injection portion disposed below the plasma source element, facing the substrate support portion, and having a gas injection plate formed thereon for injecting process gas initiated by the plasma source element onto the substrate support portion. The plasma source element includes: an exhaust plate having exhaust holes to discharge the process gas to the lower part; a first plasma source attached to the exhaust plate; and a second plasma source disposed on the outer side at a distance from the first plasma source and attached to the exhaust plate. The first plasma source has a first opening to discharge the process gas initiated by the first plasma source; the second plasma source may have a second opening to discharge the process gas initiated by the second plasma source.

[0022] The Effects of Invention According to the plasma source and substrate processing apparatus that constitute a part of the present invention as described above, by forming the main body of the plasma source using a single component having a continuous surface, the shape of the plasma can be easily maintained. Moreover, since there is no fastening surface for assembly in the main body of the plasma source, the risk of leakage or air leakage at the boundary surface due to fastening is prevented, and the time and cost of replacement and maintenance due to changes in sealing components can be reduced.

[0023] In addition, since no separate fastening structure is formed within the main body of the plasma source, the thickness of the inner wall of the main body can be reduced, the annular channel can be increased, the plasma generation area can be increased, and assembly can be simplified.

[0024] Furthermore, forming cooling lines within the plasma source reduces plasma damage and improves process stability and efficiency during substrate processing. However, this effect should not be construed as limiting the scope of the invention. Simple Explanation of the Diagram

[0025] Figure 1 is a schematic diagram showing a plasma source according to an embodiment of the present invention; Figure 2 is a schematic perspective view showing the plasma source of Figure 1; Figure 3 is a schematic diagram showing power transmission in the plasma source of Figure 1; Figures 4 and 5 are schematic perspective views showing a portion of the structure of the reaction host in the plasma source of Figure 1; Figure 6 is a cross-sectional view of various embodiments showing a section along l-l' in the plasma source of Figure 4; Figure 7 is a cross-sectional view showing the m-m' section in the plasma source of Figure 4; Figure 8 is a cross-sectional view showing the n-n' section in the plasma source of Figure 4; Figure 9 is a schematic perspective view showing a portion of the structure of the reaction body in a plasma source according to another embodiment of the present invention; Figure 10 is a conceptual perspective view showing the shape of the cooling medium flow section in the plasma source of Figure 9; Figure 11 is a cross-sectional view showing the o-o' section in the plasma source of Figure 9; Figures 12 and 13 are cross-sectional views of p-p' in various embodiments of the plasma source shown in Figure 9; Figure 14 is a top view showing the exhaust plate of a plasma source according to a partial embodiment of the present invention; Figures 15 to 17 are schematic perspective views showing a cut portion of a plasma source according to various embodiments of the present invention; Figures 18 and 19 are schematic perspective views showing a substrate processing apparatus according to various embodiments of the present invention; Figure 20 is a schematic cross-sectional view showing a substrate processing apparatus according to another embodiment of the present invention; and Figure 21 is a schematic perspective view showing the plasma source element of a substrate processing apparatus according to a portion of the present invention. Implementation

[0026] Hereinafter, various preferred embodiments of the present invention will be described in detail with reference to the accompanying drawings.

[0027] The embodiments of the present invention are provided to more fully illustrate the invention to those skilled in the art. The following embodiments can be varied in various forms, and the scope of the invention is not limited to these embodiments. Rather, these embodiments are provided to enrich and complete the invention and to fully convey the spirit of the invention to those skilled in the art.

[0028] Furthermore, for ease of explanation and clarity, the thickness or size of each layer is exaggerated in the accompanying drawings. Moreover, embodiments of the present invention should not be interpreted as limited to the specific shape of the area shown in the present invention, but should include, for example, shape variations that occur during the manufacturing process.

[0029] Figure 1 is a schematic diagram showing a plasma source according to an embodiment of the present invention; Figure 2 is a schematic perspective view showing the plasma source of Figure 1; Figure 3 is a schematic diagram showing power transmission in the plasma source of Figure 1; Figures 4 and 5 are schematic perspective views showing a portion of the structure of the reaction body in the plasma source of Figure 1.

[0030] Referring to Figures 1 to 5, a plasma source 200 according to an embodiment of the present invention may include: a reaction body 210, a magnetic core 220, a winding 230, and a cooling medium flow section 240.

[0031] The reaction body 210 may include a main body portion 211 and an insulating portion 216. Gas diffusion spaces 214 may be formed inside the main body portion 211.

[0032] Specifically, a first gas diffusion space 214a is formed inside the first main body 211a, a second gas diffusion space 214b is formed inside the second main body 211b, and a third gas diffusion space 214c can be formed inside the third main body 211c. The cross-sectional shape of the gas diffusion space 214 can be various shapes such as circular or elliptical. In this case, the gas diffusion space 214 can be an annular channel.

[0033] In some embodiments, the main body 211 may be formed by coating an insulating material onto a conductive material. For example, the main body 211 may be formed by coating an insulating material, such as a metal oxide or a metal nitride, onto a metal.

[0034] In some embodiments, at least one air inlet 213 (first air inlet 213a, second air inlet 213b, third air inlet 213c) is formed on the upper wall or side wall of the main body 211 for introducing gas into the annular channel, and at least one opening 215 for discharging gas may be formed on the lower wall of the main body 211.

[0035] The reaction body 210 can be combined among a plurality of interconnected body parts to form one or more insulating parts 216.

[0036] The insulating portion 216 may be incorporated between the main body portions 211. The insulating portion 216 is not directly electrically connected to the main body portions 211, but rather is inserted between the two main body portions 211 to achieve mutual spacing. For example, a flow path may be formed inside the insulating portion 216 to allow the gas diffusion spaces 214 within the main body portions 211 to communicate with each other. The insulating portion 216 may be formed using a suitable insulating material, such as oxides, nitrides, or polymer resins.

[0037] In some embodiments, the reaction body 210 comprises multiple interconnected gas diffusion spaces 214 within its main body portions, forming a closed-loop shape and an annular channel for initiating the process gas. More specifically, each main body portion 211 corresponds to a structure that segments the overall shape of the annular channel, thereby defining the annular channel as a whole. For example, if the annular channel is formed in the shape of a donut, the main body portion 211 may correspond to a structure that divides this donut shape into multiple segments.

[0038] The magnetic core portion 220 may be formed to surround at least a portion of the main body portion 211.

[0039] The magnetic core portions 220 surround the reaction body 210 and can be spaced apart from each other along the annular channel. For example, the magnetic core portions 220 can be disposed on the body portion 211. More specifically, the first magnetic core 220a is disposed to surround the outer peripheral surface of the first body portion 211a, the second magnetic core 220b is disposed to surround the outer peripheral surface of the second body portion 211b, and the third magnetic core 220c can be disposed to surround the outer peripheral surface of the third body portion 211c. For example, the magnetic core portions 220 can contain a magnetic material, such as ferrite material.

[0040] In some embodiments, the magnetic core is formed as a single closed structure or may have a structure combining multiple segments.

[0041] The winding section 230 is configured to wind the magnetic core section 220 and receives power from the power supply section 400, and can induce magnetic force within the magnetic core section 220. For example, the first winding 230a is configured to wind the first magnetic core 220a, the second winding 230b is configured to wind the second magnetic core 220b, and the third winding 230c can be configured to wind the third magnetic core 220c.

[0042] The winding section 230 receives power from the power supply section 400 and can induce magnetic force within the magnetic core section 220. For example, when the winding section 230 is wound in the width direction of the magnetic core section 220, if power is supplied to the winding section 230, magnetic force can be induced in the circumferential direction within the magnetic core section 220.

[0043] As shown in Figure 3, the power supply unit 400 may include a power supply device that can supply RF power to the winding unit 230 via a resonant circuit unit (not shown). For example, the power supply unit 400 may include a switch-mode power supply (SMPS).

[0044] In the plasma source 200, the number of main body portions 211 is exemplary, and two or more may be selected. Furthermore, the number of magnetic core portions 220, winding portions 230, and insulating portions 216 can be varied depending on the number of main body portions 211.

[0045] In some embodiments, the main body 211 can be divided into a first region 2115 and a second region 2116.

[0046] For example, as shown in Figure 4, the first region 2115 has a first height H1 and a first width W1, and the second region 2116 may have a second height H2 and a second width W2. The first height H1 is greater than the second height H2, and the first width W1 may be the same as or greater than the second width W2. For example, the first height H1 may be more than 1.5 times larger than the second height H2, and the first width W1 may be 1.1 to 1.4 times larger than the second width W2.

[0047] To illustrate more specifically, the cross-sectional area of ​​the second region 2116 can be smaller than that of the first region 2115. Therefore, the process gas flowing in the gas diffusion space 214 formed inside the second region 2116 of the magnetic core 220 is faster than the process gas flowing in the gas diffusion space 214 formed inside the first region 2115. This guides the gas to flow smoothly throughout the gas diffusion space 214, increases the start-up rate of the process gas, and improves the start-up speed.

[0048] In addition, the second region 2116 of the main body 211 is smaller in width and height than the first region 2115, so that the magnetic core 220 can be combined in the second region 2116.

[0049] A flange 217 may be attached to the end of the main body portion 211 (a first flange 217a may be formed at the end of the first main body portion 211a, a second flange 217b may be formed at the end of the second main body portion 211b, and a third flange 217c may be formed at the end of the third main body portion 211c). For example, an insulating portion 216 may be attached to both sides of the main body portion 211 to separate it from other main body portions. That is, by attaching the insulating portion 216 to the flange 217 formed at one end of the main body portion 211 and attaching it to the other end of the other main body portion, an insulating portion 216 may be formed between the main body portion 211 and the other main body portions.

[0050] In some embodiments, at least one air inlet 213 is formed on the upper wall of the first region 2115, and at least one opening 215 may be formed on the lower wall of the first region 2115. Gas flowing into the gas diffusion space 214 through the air inlet 213 is activated by plasma and can be discharged to the lower part of the plasma source 200 through the opening 215. For example, the opening 215 may be formed in the shape of a slot.

[0051] In some embodiments, the air intake 213 may also be formed on the sidewall of the first region 2115.

[0052] According to a partial embodiment of the present invention, as shown in FIG4, the plasma source 200 may include a sensor unit 250.

[0053] The sensor unit 250 may include a sensor for measuring the reaction of the process gas formed in the gas diffusion space 214, i.e., plasma. For example, the sensor unit 250 may be a plasma measuring instrument photosensor.

[0054] Figure 6 is a cross-sectional view of various embodiments showing a section along l-l' in the plasma source of Figure 4; Figure 7 is a cross-sectional view showing a section along m-m' in the plasma source of Figure 4; Figure 8 is a cross-sectional view showing a section along n-n' in the plasma source of Figure 4.

[0055] Referring to Figures 4 to 8, the reaction body 210 can be formed by combining a plurality of body parts 211, which are formed with a single component so that the inner surface of the gas diffusion space 214 has a continuous surface.

[0056] Specifically, the main body 211 can be formed by a first region 2115 and a second region 2116. At this time, the first region 2115 and the second region 2116 can be formed as a single unit and can freely change their shape or size.

[0057] For example, as shown in FIG4, the external shapes of the first region 2115 and the second region 2116 of the magnetic core 220 can be formed to be different from each other. The gas diffusion spaces 214 inside the first region 2115 and the second region 2116 form different cross-sectional areas, so the first region 2115 and the second region 2116 can form different internal shapes.

[0058] At this time, the first region 2115 and the second region 2116 of the main body 211 are formed as one unit, and no fastening surface or fastening part for joining is formed. That is, as shown in FIG8, in the cross-sectional view perpendicularly cut along the gas diffusion space 214 of the main body 211, the distinction between the first region 2115 and the second region 2116 is made through the joining of the magnetic core 220 and the flange 217, and no separate boundary surface is formed.

[0059] For example, the main body 211 can be formed from a single component so that the inner surface of the gas diffusion space 214 has a continuous surface and the inner surface of the cooling medium flow section 240 has a continuous surface.

[0060] For example, the main body 211 is formed using 3D printing and can be freely changed in shape. The main body 211 is formed into one piece in one step through 3D printing, thereby the main body 211 can have a continuous structure without fastening surfaces or joints.

[0061] Therefore, there is no need to use O-rings or other sealing parts for connecting the first region 2115 and the second region 2116 of the main body 211, thus preventing changes in the sealing part or leakage at the joint due to high temperature in the gas diffusion space 214.

[0062] Furthermore, since there is no fastening part, the inner wall surrounding the gas diffusion space 214 formed inside the main body 211 does not form a boundary surface. Therefore, the flow of process gas is more uniform, preventing the generation of particles at the boundary surface. Also, since there is no fastening part, the volume can be reduced or the area of ​​the gas diffusion space 214 can be increased.

[0063] In addition, since no separate fasteners are formed, the thickness of the inner wall can be reduced, and the heating area can be expanded within a limited volume, increasing the plasma generation area and reducing the overall volume while maintaining the same level of cooling performance.

[0064] Furthermore, the internal flow path of the cooling medium flow section 240 forms a continuous surface without any fasteners or joints, thus allowing the cooling medium to circulate smoothly within the cooling medium flow section 240.

[0065] A cooling medium flow section 240 for flowing cooling medium may be formed in at least a portion of each of the main body sections 211.

[0066] A cooling medium flow section 240 may be formed on at least a portion of the main body 211 to allow the cooling medium to flow. The cooling medium can be circulated through the cooling medium flow section 240, thereby cooling the reaction body 210. For example, the cooling medium flow section 240 may form a cooling flow path on one side of the main body 211 surrounding the gas diffusion space 214. The cooling medium may include cooling water.

[0067] In some embodiments, the cooling medium flow portion 240 may be formed in the first region 2115 (e.g., the upper wall of the first region 2115) as a groove shape. Specifically, the cooling medium flow portion 240 may be formed in a flow path shape patterned in a predetermined shape. For example, the cooling medium flow portion 240 may be formed by excavating a groove of flow path shape in the upper wall of the first region 2115 through a processing procedure.

[0068] The cooling medium flow section 240 may include: a cooling groove section 241, which is formed as a groove in the main body section 211; and a cover section 212, which covers the cooling groove section 241.

[0069] Accordingly, the cooling medium flow section 240 can be sealed.

[0070] In some embodiments, for convenience, the main body 211 can be divided into an upper main body 2111 and a lower main body 2112. In this case, a gas diffusion space 214 is formed in the lower main body 2112 of the main body 211, and a cooling medium flow section 240 can be formed in the upper main body 2111. For example, observing a cross-section cut perpendicular to the direction from the first region 2115 toward the gas diffusion space 214, as shown in FIG6, the cooling medium flow section 240 is formed in the upper main body 2111 of the main body 211, and the gas diffusion space 214 can be formed in the lower main body 2112. However, the upper main body 2111 and the lower main body 2112 are only a virtual distinction based on the gas diffusion space 214, and do not refer to physically separated parts.

[0071] As described above, the heat generated in the gas diffusion space 214 is transferred through the main body 211 to the cooling medium in the cooling medium flow section 240, thereby reducing the temperature of the reaction body 210, preventing heat from diffusing to the outside of the reaction body 210, and suppressing heat transfer to the core section 220, thereby maintaining the core characteristics.

[0072] At this time, in order to make the cooling medium flow section 240 form a groove shape on the upper part of the upper body 2111, the upper and lower thicknesses of the upper body 2111 can be greater than the side wall thickness of the lower body 2112.

[0073] The above examples illustrate an instance where the cooling medium flow portion 240 is formed on the upper part or upper wall of the main body portion 211. However, in some embodiments, the cooling medium flow portion 240 may also be formed on the side wall or lower wall of the main body portion 211.

[0074] Figure 9 is a schematic perspective view showing a partial structure of the reaction body in a plasma source according to another embodiment of the present invention; Figure 10 is a conceptual perspective view showing the shape of the cooling medium flow section in the plasma source of Figure 9; Figure 11 is a cross-sectional view showing the o-o' section in the plasma source of Figure 9; Figures 12 and 13 are cross-sectional views showing the p-p' section in various embodiments of the plasma source of Figure 9.

[0075] As shown in Figures 9 to 13, according to another embodiment of the present invention, a plasma source can form a cooling medium flow section 240 for flowing a cooling medium in at least a portion of each of the main body sections 211.

[0076] The cooling medium flow section 240 is formed in a shape that surrounds the gas diffusion space 214 so that the cooling medium can flow around the gas diffusion space 214. This shape can be integrally formed with the main body 211 inside the main body 211. The cooling medium can be circulated through the cooling medium flow section 240, thereby cooling the reaction body 210.

[0077] For example, the cooling medium flow section 240 may be formed in at least a portion of the main body 211 in a shape that at least surrounds a portion of the gas diffusion space 214, such as any part of the upper, side, or lower portion, preferably forming a cooling flow path in the upper and side portions.

[0078] More specifically, a cooling medium flow section 240 may be formed on the inner side of the main body 211, where the cooling medium flows along the inner wall surrounding the gas diffusion space 214. At this time, as shown in FIG11, the cooling medium flow section 240 may be formed on the upper and side parts where the opening 215 is not formed, with reference to the direction from the main body 211 toward the gas diffusion space 214.

[0079] The cooling medium flow section 240 is formed by bending multiple times around the gas diffusion space 214 to allow the cooling medium to flow for as long a time and over as long a distance as possible.

[0080] According to some embodiments, as shown in FIG12, the cooling medium flow section 240 inside the main body 211 can be formed in the periphery of the gas diffusion space 214 in the first region 2115. Therefore, by activating the gas in the annular channel, high-temperature heating of the first region 2115 of the main body 211 can be prevented.

[0081] According to some embodiments, at least a portion of the cooling medium flow section 240 may be formed in the first region 2115 to at least surround a portion of the gas diffusion space 214.

[0082] According to some embodiments, at least a portion of the cooling medium flow section 240 may be formed in the second region 2116 to at least surround a portion of the gas diffusion space 214.

[0083] According to some embodiments, at least a portion of the cooling medium flow section 240 is formed in the first region 2115, while at least another portion of the cooling medium flow section 240 may be formed in the second region 2116.

[0084] For example, a cooling medium flow section 240 may be formed in the periphery of a second region 2116, which forms the magnetic core section 220 and is combined with an insulating section 216 for plasma ignition. Accordingly, a cooling medium can flow in all regions of the main body section 211, and heat release to the outside and heat transfer to the magnetic core section 220 due to the heating of the main body section 211 can be prevented.

[0085] The cooling medium flow section 240 can prevent the main body section 211 from generating high temperatures at specific locations according to the plasma generation and diffusion area.

[0086] For example, the thickness and width of the flow path of the cooling medium flow section 240 increase or widen as the temperature of the plasma increases, thereby increasing the contact area with the cooling medium and improving the heat transfer efficiency of the cooling medium.

[0087] Alternatively, by reducing the cross-sectional area of ​​the flow path of the cooling medium flow section 240 and increasing the flow rate of the cooling medium flowing in the flow path, the cooling speed can be improved. This can be freely varied according to the shape of the reaction body 210.

[0088] The cooling medium flow section 240 can be configured such that the width of the cooling medium flow becomes narrower as it moves away from the magnetic core section 220. For example, as shown in Figures 12 and 13, the flow path width of the cooling medium flow section 240 can gradually narrow in the direction away from the second region 2116 of the magnetic core section 220.

[0089] At this time, as shown in Figures 1 and 2, a first magnetic core 220a and a first insulating part 216a are combined on one side of the first main body 211a, a second magnetic core 220b and a second insulating part 216b combined with the second main body 211b can be combined on the other side of the first main body 211a, and a third magnetic core 220c and a third insulating part 216c combined with the third main body 211c can be combined on the other side of the second main body 211b. That is, magnetic core 220 and insulating part 216 can be combined on both sides of the main body 211.

[0090] Accordingly, the point furthest from the magnetic core 220 in the main body 211 can be the center of the main body 211, and the cooling medium flow section 240 can be formed such that the width of the cooling medium flow section becomes narrower as it moves toward the center of the main body 211.

[0091] Additionally, as shown in FIG10, the width W4 of the flow path for the cooling medium to flow in the cooling medium flow section 240 that surrounds the periphery of the second region 2116 may be greater than the width W3 of the flow path for the cooling medium to flow in the cooling medium flow section 240 that surrounds the periphery of the first region 2115.

[0092] Therefore, when the temperature in the second region 2116 of the main body 211 is higher than that in the first region 2115 and heats up, the width W4 of the cooling medium flow section 240 formed in the second region 2116 is increased, thereby increasing the cross-sectional area of ​​the flow path and improving the heat transfer efficiency of the cooling medium. This can prevent heat release in the second region 2116 and heat transfer to the magnetic core 220.

[0093] Alternatively, the width W4 of the cooling medium flow section 240 formed in the second region 2116 can be narrowed to increase the flow rate in the cooling medium flow section 240 formed in the second region 2116, thereby preventing heat release in the second region 2116 and heat transfer to the magnetic core section 220.

[0094] Furthermore, although not shown in the figure, when the temperature in the first region 2115 of the main body 211 is higher than that in the second region 2116 and the temperature is high, the width W3 of the cooling medium flow section 240 formed in the first region 2115 can be different from the width W4 of the cooling medium flow section 240 formed in the second region 2116, that is, it can be formed to be narrower or wider.

[0095] Cooling medium flow section 240 is formed in at least one wall of first region 2115. Refrigerant inlet 218 and refrigerant outlet 219 are formed in first region 2115 respectively. Refrigerant inlet 218 is connected to one end of cooling medium flow section 240 and refrigerant outlet 219 is connected to the other end of cooling medium flow section 240.

[0096] The cooling medium flow section 240 is mostly sealed, and the refrigerant inlet 218 and refrigerant outlet 219 can be connected to a refrigerant supply line (not shown in the figure).

[0097] According to a partial embodiment of the present invention, the heat generated in the gas diffusion space 214 is transferred through the main body 211 to the cooling medium flowing to the cooling medium flow section 240, thereby rapidly exchanging heat, reducing the temperature of the reaction body 210, preventing heat from diffusing to the outside of the reaction body 210, and suppressing heat transfer to the magnetic core section 220, thereby maintaining the magnetic core characteristics.

[0098] According to the plasma source, if power is supplied from the power supply unit 400 to the winding unit 230, a magnetic force is induced in the magnetic core unit 220. Through this induced magnetic force, a current can be induced in the annular channel penetrating the interior of the magnetic core unit 220. Through this current, gas is activated in the annular channel, and a plasma environment can be formed.

[0099] In a plasma source, the current flowing in the winding section 230 induces a magnetic force in the core section 220, and this induced magnetic force induces a current in the annular channel. This structure corresponds to the principle of a transformer. From this perspective, the plasma source can also be called a transformer-coupled plasma (TCP) device or a magnetic induction plasma device.

[0100] In some embodiments, in the transformer structure, the winding section 230 can function as a primary coil, and the annular channel defined by the main body section 211 can function as a secondary coil. From this perspective, the winding section 230 can be referred to as a primary coil or primary winding, and the current flowing in the winding section 230 can be referred to as the primary current. Furthermore, the current induced within the annular channel can also be referred to as the secondary current.

[0101] By incorporating the plasma source 200 and bonding multiple magnetic cores 220 to the multiple main body portions 211, plasma can be stably formed within the annular channel. Furthermore, by controlling the temperature of the main body portions 211 through the cooling medium flow portions 240, plasma damage to the reaction body 210 can be reduced. In addition, since cooling medium flow portions 240 are formed in each of the main body portions 211, the overall temperature of the reaction body 210 can be uniformly controlled.

[0102] Figure 14 is a top view showing the exhaust plate of a plasma source according to a partial embodiment of the present invention; Figures 15 to 17 are schematic perspective views showing a cut portion of a plasma source according to various embodiments of the present invention.

[0103] Referring to Figures 14 to 17, the plasma source 200 according to a portion of the present invention may include an exhaust plate 300.

[0104] The exhaust plate 300 has an exhaust port 320, which can be attached to the lower part of the reaction body 210, allowing the process gas started in the reaction body 210 to be discharged to the lower part.

[0105] As shown in Figure 14, specifically, the exhaust plate 300 has a first exhaust hole 320a, which corresponds to the first opening 215a formed below the first main body 211a, and a second exhaust hole 320b, which corresponds to the second opening 215b formed below the second main body 211b. A third exhaust hole 320c, which corresponds to the third opening 215c formed below the third main body 211c, may also be formed.

[0106] The exhaust plate 300 can be formed to directly cover the upper part of the process chamber (described later) and can be formed to be combined with the chamber cover covering the process chamber.

[0107] As shown in Figure 15, the reaction body 210 can be attached to the exhaust plate 300 to supply the activated process gas to the exhaust plate 300. For example, the exhaust port 320 is connected in communication with the opening 215 of the reaction body 210, and the exhaust plate 300 can be formed according to the shape of the reaction body 210.

[0108] As described above, since the exhaust plate 300 is combined with the reaction body 210, the process gas generated by the plasma source 200 can be easily supplied to the lower part of the plasma source 200 through the opening 215 and then sprayed through the exhaust plate 300, and particles and the like can be suppressed from entering the plasma source 200 from the outside of the exhaust plate 300 in the opposite direction.

[0109] The exhaust port 320 is a hole structure that passes through the exhaust plate 300, and can be formed into the shape of a cylinder, cone, pyramid, etc.

[0110] In some embodiments, a source insulation component 260 may be inserted between the reaction body 210 and the exhaust plate 300. This prevents noise currents such as grounding current and leakage current from being transmitted to the plasma source through the exhaust plate 300.

[0111] Alternatively, a source insulation component 260 may be attached to the lower part of the exhaust plate 300 of the plasma source 200. Accordingly, the process chamber attached to the lower part of the source insulation component 260 is electrically insulated, preventing noise currents such as grounding current and leakage current generated below the plasma source 200 from being transmitted to the plasma source.

[0112] For example, as shown in Figure 16, the source insulation component 260 is formed in a disc shape, supporting the entire exhaust plate 300 at its lower part, and can directly cover and be combined with the process chamber or can be combined with a chamber cover that covers the process chamber. Alternatively, as shown in Figure 17, the source insulation component 260 is formed in a ring shape, corresponding to the exhaust plate 300, and the chamber cover that covers the process chamber can be formed above the process chamber.

[0113] In some other embodiments, the exhaust plate 300 may be formed using an insulating material. For example, instead of using a separate insulating component, the exhaust plate 300 may be formed using an insulating material, so that the plasma sources 200 are not electrically connected to the process chambers but can be spaced apart from each other.

[0114] Figures 18 and 19 are schematic perspective views showing a substrate processing apparatus according to various embodiments of the present invention.

[0115] As shown in Figures 18 and 19, the substrate processing apparatus may include: a process chamber 2000, a substrate support 3000, a plasma source element 1000, and a gas jetting unit 4000.

[0116] A reaction space B can be formed inside the process chamber 2000. As shown in FIG18, the process chamber 2000 can be sealed internally by the exhaust plate 1300 of the plasma source element 1000, and a chamber cover 2400 can be included at the upper end of the process chamber 2000 to seal the interior. The process chamber 2000 can be connected to a vacuum pump 2300 through the exhaust section 2200, thereby forming a vacuum environment. Further, the process chamber 2000 can include an inlet / outlet and a gate (not shown in the figure). The inlet / outlet is used to load the substrate S into or unload the substrate S from the reaction space B, and the gate is used to open and close the inlet / outlet.

[0117] The substrate support 3000 can be integrated into the process chamber 2000 to support the substrate S within the reaction space B. For example, the substrate support 3000 and the gas injection unit 4000 can be disposed facing each other in the process chamber 2000. Furthermore, a heater (not shown) for heating the substrate S can be included inside the substrate support 3000. The substrate support 3000 is configured to place the substrate S on it, and therefore can also be referred to as a substrate placement part, base, substrate holder, etc.

[0118] The top plate of the substrate support 3000 has a shape that roughly corresponds to the shape of the substrate S, but is not limited to this; various shapes can be provided to stably place the substrate S. Furthermore, a shaft 2100 is connected to the top plate of the substrate support 3000. The shaft 2100 can be connected to an external motor (not shown) to enable lifting. Optionally, a tool for maintaining airtightness, such as a bellows, can also be connected between the shaft 2100 and the process chamber 2000.

[0119] In some embodiments, the substrate support 3000 may further include an electrostatic electrode (not shown) to apply an electrostatic force to the substrate S to fix the substrate S on the upper part. In this case, the electrostatic electrode may utilize DC power to generate the electrostatic force.

[0120] The gas injection unit 4000 can be integrated into the process chamber 2000 to inject process gases supplied from outside the process chamber 2000 into the reaction space B. For example, the gas injection unit 4000 can be integrated with the substrate support unit 3000 facing each other on the upper part of the process chamber 2000. The gas injection unit 4000 can supply process gases, such as source gases, reactive gases, inert gases, etc., to the substrate S within the reaction space B.

[0121] In some embodiments, the gas injection unit 4000 can be understood as being combined with the exhaust plate 1300 to directly cover the process chamber 2000, or being combined with the exhaust plate 1300 through the chamber cover 2400 to the process chamber 2000, or it can also be combined with the chamber cover 2400.

[0122] The plasma source element 1000 is used to activate the process gas supplied from the outside, as described in Figures 15 to 17. The plasma source element 1000 can be coupled to the substrate support 3000 facing each other in the process chamber 2000.

[0123] For example, as shown in FIG18, the plasma source element 1000 can be integrated into the process chamber 2000 through the exhaust plate 1300 formed at the bottom, or, as shown in FIG19, the exhaust plate 1300 formed at the bottom of the plasma source element 1000 can be integrated into the chamber cover 2400.

[0124] The plasma source element 1000 can supply activated process gases, such as free radicals, downwards (e.g., into the internal space of the gas injection section 4000).

[0125] FIG20 is a schematic cross-sectional view showing a substrate processing apparatus according to another embodiment of the present invention; FIG21 is a schematic perspective view showing a plasma source element of a substrate processing apparatus according to a partial embodiment of the present invention. The substrate processing apparatus is formed by adding or changing a portion of the structure of the substrate processing apparatus of FIG18. The two embodiments can be referred to each other, so repeated descriptions are omitted.

[0126] As shown in Figure 20, the substrate processing apparatus may include: a process chamber 2000, a gas jet section 4000, a substrate support section 3000, and a plasma source element 1000.

[0127] The plasma source element 1000 is used to activate the process gas supplied from the outside, as described with reference to FIG18. The plasma source element 1000 and the substrate support portion 3000 are coupled to the process chamber 2000 facing each other. For example, the plasma source element 1000 can be directly coupled to the upper part of the process chamber 2000, or it can be coupled to the chamber cover 2400 covering the process chamber 2000. The plasma source element 1000 can supply the activated process gas, such as free radicals, downward (e.g., into the internal space of the gas injection portion 4000).

[0128] As shown in Figure 21, the plasma source element 1000 may include: an exhaust plate 1300; a first plasma source 1100 attached to the exhaust plate 1300; and a second plasma source 1200 attached to the exhaust plate 1300 to surround the first plasma source 1100.

[0129] The first plasma source 1100 and the second plasma source 1200 can be combined on the exhaust plate 1300. In this case, the exhaust plate 1300 may include a first source gas exhaust port 1310 and a second source gas exhaust port 1320, with the first source gas exhaust port 1310 corresponding to the first plasma source 1100 and the second source gas exhaust port 1320 corresponding to the second plasma source 1200.

[0130] The second plasma source 1200 may actually have the same structure as the plasma source described above, so the structure and description related to the plasma source can be referred to.

[0131] The first plasma source 1100 may have a structure similar to the plasma source described above, but from the perspective of forming a small diameter, some of the structure can be changed in the plasma source. For example, in the first plasma source 1100, the reaction body may be composed of one or two blocks instead of three, and accordingly one or two magnetic cores may also be provided.

[0132] For example, the first plasma source 1100 is configured in a donut shape on the central portion, and the second plasma source 1200 is a donut structure with a larger diameter surrounding the donut structure of the first plasma source 1100, which may be configured on the edge portion.

[0133] The first plasma source 1100 can be coupled to the exhaust plate 1300 to supply the activated process gas to the exhaust plate 1300. For example, the first source gas exhaust port 1310 is coupled in communication with the first source opening 1115 of the first plasma source 1100, and the exhaust plate 1300 can be formed according to the shape of the first plasma source 1100.

[0134] The first plasma source 1100 is provided with a first source opening 1115 to discharge the process gas started by the first plasma source 1100; the second plasma source 1200 may be provided with a second source opening 1215 to discharge the process gas started by the second plasma source 1200.

[0135] Process gas activated by the first plasma source 1100 is supplied to the exhaust plate 1300 through the first source opening 1115, and process gas activated by the second plasma source 1200 is supplied to the exhaust plate 1300 through the second source opening 1215.

[0136] As described above, since a plurality of plasma sources, such as the first plasma source 1100 and the second plasma source 1200, are arranged on the exhaust plate 1300, the emission amount of process gases, such as free radicals, that are activated in a specific region can be adjusted. For example, the amount of free radicals emitted from the first plasma source 1100 and the second plasma source 1200 can be adjusted according to the size and shape of the first source opening 1115 and the second source opening 1215.

[0137] In some embodiments, source insulation components 1160 and 1260 may be inserted between the first plasma source 1100, the second plasma source 1200, and the exhaust plate 1300. This prevents noise currents such as grounding current and leakage current from being transmitted to the plasma source through the exhaust plate 300.

[0138] According to some embodiments, a first plasma source 1100 receives process gas from a process gas supply device 5000 via a first gas conduit 5100, and a second plasma source 1200 receives process gas from the process gas supply device 5000 via a second gas conduit 5200. This plasma source element 1000 can spray the activated process gas entirely from the center and edges of the gas injection section 4000.

[0139] In some embodiments, the gas injection unit 4000 may include an injection plate 4100 for injecting activated process gas supplied from the plasma source element 1000 into the reaction space B. A plurality of injection holes can be formed in the injection plate 4100 in a vertical direction. Optionally, the gas injection unit 4000 may also include an intermediate plate, such as a baffle, for injecting gas between the chamber cover 2400 and the injection plate 4100.

[0140] In some embodiments, the gas injection unit 4000 may also include a separate air inlet to supply process gas internally without passing through the plasma source element 1000. In this case, the gas injection unit 4000 may also supply process gas activated by the plasma source element 1000 and process gas that is not activated without passing through the plasma source element 1000.

[0141] When the supply of the second plasma source 1200 is controlled to be greater than the supply of the first plasma source 1100 according to the plasma source element 1000, the supply of process gas at the edge of the substrate S can be higher than the supply at the center. This adjustment of the supply of process gas can supplement the relatively low plasma density points at the edge of the substrate S, and promote a uniform reaction on the substrate S.

[0142] The substrate processing apparatus according to the various embodiments of the present invention described above can be used as a thin film deposition apparatus, such as an atomic layer deposition (ALD) apparatus or a chemical vapor deposition (CVD) apparatus.

[0143] According to the plasma source element of the present invention, the main body 211 constituting the plasma source 200 has no fastening part other than the insulating part 216. Therefore, no boundary surface is formed on the inner wall surrounding the gas diffusion space 214 formed inside the main body 211. As a result, the flow of process gas is more uniform, particles can be prevented from being generated at the boundary surface, and the volume can be reduced or the area of ​​the gas diffusion space 214 can be increased because there is no fastening part.

[0144] According to the substrate processing apparatus of the present invention, since the plasma source element 1000 is directly coupled to the gas injection unit 4000, the activated process gas (e.g., free radicals) can be directly supplied to the substrate S, thereby shortening the free radical supply path. Accordingly, by using the plasma source element 1000, compared with the use of conventional remote plasma devices, free radical recombination can be further reduced, free radical supply efficiency can be improved, and thus process reliability can be improved.

[0145] In addition, according to the substrate processing apparatus, a cooling medium flow section 240 is formed in the plasma source element 1000 to control the temperature of the plasma source element 1000, which can reduce plasma damage to the plasma source element 1000 and improve the stability and efficiency of the substrate processing process.

[0146] The embodiments shown above with reference to the accompanying drawings illustrate the present invention, but these are merely exemplary, and those skilled in the art will understand that various variations and equivalent embodiments can be implemented. Therefore, the true scope of protection of the present invention should be defined by the technical concept of the claims.

[0147] 200: Plasma source 210: Reactor 211: Main body 211a: First Main Body 211b: Second Main Body 211c: Third Main Body 2111:Upper body 2112:Lower body 2115: First District 2116: Second Region 212:Gai Department 213: Air Intake Section 213a: First air intake 213b: Second air intake 213c: Third air intake 214: Gas diffusion space 214a: First gas diffusion space 214b: Second gas diffusion space 214c: Third gas diffusion space 215: Opening 215a: First opening 215b: Second opening 215c: Third opening 216: Insulation section 216a: First Insulation Part 216b: Second Insulation Section 216c: Third Insulation Section 217: Flange 217a: First flange 217b: Second flange 217c: Third flange 218: Refrigerant Inlet 219: Refrigerant Export 220: Core section 220a: First magnetic core 220b: Second magnetic core 220c: Third magnetic core 230: Winding section 230a: First winding 230b: Second winding 230c: Third winding 240: Cooling medium flow section 241: Cooling tank section 250: Sensor Section 260: Source insulation components 300: Exhaust plate 320: Exhaust port section 320a: First exhaust port 320b: Second exhaust port 320c: Third exhaust port 400: Power Supply Section 1000: Plasma source components 1100: First Plasma Source 1115: First source opening 1160: Source insulation component 1200: Second Plasma Source 1215: Second source opening 1260: Source insulation component 1300: Exhaust plate 1310: First source gas exhaust port 1320: Second source gas exhaust port 2000: Process Chamber 2100: Shaft 2200: Exhaust section 2300: Vacuum Pump 2400: Chamber cover 3000: Substrate support portion 4000: Gas Injection Section 4100: Spray Plate 5000: Process Gas Supply Unit 5100: First Gas Pipeline 5200: Second gas pipeline B: Reaction space H1: First Height H2: Second Altitude W1: First width W2: Second width W3, W4: Width S:Substrate

Claims

1. A plasma source, comprising: A reaction body, formed by combining a plurality of main body portions, wherein a gas diffusion space is formed inside the main body portion and is formed by a single component so that the inner surface of the gas diffusion space has a continuous surface; one or more insulating portions are formed between the plurality of main body portions; and the gas diffusion spaces within the plurality of main body portions are interconnected to form a closed loop shape and an annular channel for initiating process gas; a magnetic core portion, formed to surround at least a portion of the main body portion; a winding portion, configured to wind the magnetic core portion and receive power from a power supply portion to induce magnetic force within the magnetic core portion; and a cooling medium flow portion, formed in at least a portion of the main body portion to allow cooling medium to flow; the main body portion is formed by a first region having a first height and a first width and a second region having a second height and a second width, wherein the first region and the second region are integrally formed and do not form fastening surfaces or fastening portions for mutual connection.

2. The plasma source according to claim 1, wherein, The cooling medium flow section includes: a cooling tank section formed in the main body section; and a cover section covering the cooling tank section.

3. The plasma source according to claim 1, wherein, The first height is greater than the second height; the first width is greater than the second width; the magnetic core portion is configured to surround the second region of the main body portion; and the cooling medium flow portion is formed in the first region of the main body portion.

4. The plasma source according to claim 3, wherein, The cooling medium flow section is formed on one of the walls surrounding the main body; and a refrigerant inlet and a refrigerant outlet are formed on the main body, the refrigerant inlet being connected to one end of the cooling medium flow section and the refrigerant outlet being connected to the other end of the cooling medium flow section.

5. The plasma source according to claim 1, wherein, The main body is formed as a single component so that the inner surface of the cooling medium flow section has a continuous surface.

6. The plasma source according to claim 5, wherein, The cooling medium flow section is formed in a shape that at least surrounds a portion of the gas diffusion space in at least a portion of the main body.

7. The plasma source according to claim 5, wherein, The main body is formed by a first region having a first height and a first width and a second region having a second height and a second width; the first height is greater than the second height; the first width is greater than the second width; and the magnetic core is configured to surround the second region of the main body.

8. The plasma source according to claim 7, wherein, The cooling medium flow section is formed in the first region in a shape that at least partially surrounds the gas diffusion space.

9. The plasma source according to claim 7, wherein, The cooling medium flow section is formed in the second region in a shape that at least partially surrounds the gas diffusion space.

10. The plasma source according to claim 1, wherein, At least one air intake is formed on the upper wall or side wall of the main body; and at least one opening is formed on the lower wall of the main body.

11. The plasma source according to claim 1, wherein, A refrigerant inlet and a refrigerant outlet are formed in the main body. The refrigerant inlet is connected to one end of the cooling medium flow section, and the refrigerant outlet is connected to the other end of the cooling medium flow section.

12. The plasma source according to claim 10, further comprising: An exhaust plate is formed with an exhaust port to allow the process gas initiated in the reaction body to be discharged to the lower part, and is combined with the lower part of the reaction body so that the exhaust port communicates with the at least one opening.

13. The plasma source according to claim 12, wherein, The exhaust plate is formed using insulating material.

14. The plasma source according to claim 12, wherein, A source insulation component is combined between the reaction body and the exhaust plate.

15. A substrate processing apparatus, comprising: The process chamber forms a reaction space inside; A substrate support is attached to the lower part of the process chamber to support the substrate within the reaction space. A plasma source element is attached above the process chamber and has one or more plasma sources as claimed in any of claims 1 to 11; and a gas injection section is disposed below the plasma source element, facing the substrate support, and has a gas injection plate formed thereon for injecting process gas initiated by the plasma source element onto the substrate support; wherein the plasma source element includes: an exhaust plate having exhaust holes to allow the process gas to be discharged to the lower part; a first plasma source attached to the exhaust plate; and a second plasma source disposed on the outer side at a distance from the first plasma source and attached to the exhaust plate; wherein the first plasma source has a first opening to discharge the process gas initiated by the first plasma source; and wherein the second plasma source has a second opening to discharge the process gas initiated by the second plasma source.

Images