Semiconductor structure and manufacturing method thereof

Abstract

This invention provides a semiconductor structure and its manufacturing method. The semiconductor structure includes a substrate, a channel layer, an electrode, and a multilayer field plate. The channel layer is disposed above the substrate, and the electrode is disposed above the channel layer. The multilayer field plate is electrically connected to the electrode and has at least one first field plate and one second field plate. The first field plate partially overlaps and is connected to the electrode, and the second field plate partially overlaps and is connected to the first field plate, so that the electrode and the multilayer field plate together form a continuous stepped structure. The partially overlapping connection refers to a configuration where there is partial direct physical contact and connection without any intermediate structure.

Description

Technical Field

[0001] This invention relates to a semiconductor structure and a method for manufacturing the same, and more particularly to a power semiconductor structure and a method for manufacturing the same. Prior Technology

[0002] In recent years, due to the increasing demand for high-frequency and high-power products, power semiconductor devices made of gallium nitride (GaN), such as aluminum gallium nitride / gallium nitride (AlGaN / GaN), have been widely used in high-power semiconductor structures, especially in radio frequency and power applications, due to their wide bandgap, high-speed electron mobility, very fast switching speed, and ability to operate in high-frequency, high-power, and high-temperature environments. Traditionally, high electron mobility transistors (HEMTs) utilize group III-V semiconductor stacks, forming a heterojunction at their interface. Due to the band bending at the heterojunction, a potential well is formed deep within the conduction band, and a two-dimensional electron gas (2DEG) is formed within the potential well.

[0003] In gallium nitride high electron mobility transistors, the channel resistance of the element is not constant under different operating conditions (such as bias voltage and frequency variations), but changes with the operating state, especially under switching action or high-voltage operation. Increased dynamic resistance introduces several problems, such as increased power loss and reduced overall efficiency, particularly at high frequencies. Furthermore, increased dynamic resistance increases the time constant, thus affecting switching speed, especially in high-frequency applications where it diminishes the advantage of rapid switching of power components.

[0004] To mitigate the problem of dynamic resistance, an additional field plate structure plays a crucial role in the gate configuration. The main function of the gate field plate is to alleviate electric field concentration, extending the electric field distribution over a wider area, thus reducing electric field spikes and reducing or delaying the dynamic resistance effect. Therefore, the addition of a field plate design reduces the dynamic resistance fluctuation of the component, which is particularly effective in high-voltage applications, improving the reliability and performance of power components.

[0005] However, current power device manufacturing processes require multiple via etching and metal evaporation processes to fabricate the field plate structure. Taking the mainstream 650-volt normally-on high electron mobility transistor (D-mode HEMT) with a three-layer field plate design as an example (Figure 1), to fabricate three field plates without affecting the dielectric layer beneath the gate metal layer, four metal evaporation processes (gate metal GM, first field plate FP1, second field plate FP2, third field plate FP3) and three via etching processes (V1, V2, V3), totaling seven layers, are required. This results in lengthy process times and high production costs. To overcome these problems, the industry urgently needs an innovative semiconductor structure to optimize the aforementioned field plate structure and reduce production time and costs. Summary of the Invention

[0006] The main objective of this invention is to provide an innovative semiconductor structure that uses a dielectric layer and a barrier layer with a high etch selectivity to be repeatedly stacked and combined with a patterned etching process to form a multilayer field plate with a continuous stepped structure, thereby alleviating the dynamic resistance effect of power devices caused by electric field concentration.

[0007] To achieve the above objectives, the present invention provides a semiconductor structure comprising a substrate, a channel layer, an electrode, and a multilayer field plate. The channel layer is disposed above the substrate, and the electrode is disposed above the channel layer. The multilayer field plate is electrically connected to the electrode and has at least one first field plate and one second field plate. The first field plate is partially overlapped and connected to the electrode, and the second field plate is partially overlapped and connected to the first field plate, such that the electrode and the multilayer field plate together form a continuous stepped structure. The partially overlapped connection refers to a configuration where there is partial direct physical contact and connection without any intermediate structure.

[0008] In one embodiment of the semiconductor structure of the present invention, the electrode is one of a gate electrode, a source electrode, and a drain electrode.

[0009] In one embodiment of the present invention, the semiconductor structure further includes a first barrier layer and a first dielectric layer, wherein the first dielectric layer covers the first barrier layer, and the first barrier layer and the first dielectric layer together define the outline of one electrode.

[0010] In one embodiment of the present invention, the semiconductor structure further includes a second barrier layer and a second dielectric layer, wherein the second dielectric layer covers the second barrier layer, the second barrier layer covers the first dielectric layer, and the second barrier layer and the second dielectric layer together define the outline of a first field plate.

[0011] In a semiconductor structure according to one embodiment of the present invention, a first barrier layer and a first dielectric layer jointly define a first critical dimension, a second barrier layer and a second dielectric layer jointly define a second critical dimension, and the first critical dimension is smaller than the second critical dimension, wherein the first critical dimension and the second critical dimension are respectively the maximum lateral dimension of one of the electrodes and the first field plate.

[0012] In one embodiment of the semiconductor structure of the present invention, the first barrier layer and the second barrier layer are one of an aluminum nitride (AlN) layer, a gallium monoxide (Ga₂O₃) layer, and an aluminum monoxide (Al₂O₃) layer.

[0013] In one embodiment of the semiconductor structure of the present invention, the first dielectric layer and the second dielectric layer are one of a silicon nitride (SiN) layer, a silicon oxide (SiO2) layer, a silicon oxynitride (SiON) layer, and a silicon carbide (SiC) layer.

[0014] In one embodiment of the semiconductor structure of the present invention, the substrate is one of a silicon substrate, a sapphire substrate, a silicon carbide substrate, a diamond substrate, and a gallium nitride substrate.

[0015] To achieve the above objectives, the present invention provides a method for manufacturing a semiconductor structure, comprising: forming a channel layer disposed above a substrate; and simultaneously forming an electrode and a multilayer field plate disposed above the channel layer, wherein the multilayer field plate is electrically connected to the electrode, the multilayer field plate having at least one first field plate and one second field plate, the first field plate being partially overlapped and connected to the electrode, and the second field plate being partially overlapped and connected to the first field plate, such that the electrode and the multilayer field plate together form a continuous stepped structure. The partially overlapped connection refers to a configuration where there is partial direct physical contact and connection without any intermediate structure.

[0016] In one embodiment of the present invention, a method for manufacturing a semiconductor structure includes the steps of forming an electrode and a multilayer field plate, comprising: sequentially forming a first barrier layer and a first dielectric layer disposed above a channel layer; sequentially forming a second barrier layer and a second dielectric layer disposed above the first dielectric layer; patterning and etching the second dielectric layer, stopping the etching at the second barrier layer to expose a portion of the second barrier layer; removing the exposed portion of the second barrier layer to expose a portion of the first dielectric layer; patterning and etching the first dielectric layer, stopping the etching at the first barrier layer to expose a portion of the first barrier layer; removing the exposed portion of the first barrier layer; and depositing metal to cover a portion of the channel layer, a portion of the first dielectric layer, and a portion of the second dielectric layer, thereby forming the electrode and the multilayer field plate in one step, wherein the first barrier layer and the first dielectric layer jointly define an outline of the electrode, and the second barrier layer and the second dielectric layer jointly define an outline of the first field plate.

[0017] In one embodiment of the semiconductor structure manufacturing method of the present invention, the steps of patterning and etching the first dielectric layer and removing the first barrier layer of the exposed portion jointly define a first critical dimension, and the steps of patterning and etching the second dielectric layer and removing the second barrier layer of the exposed portion jointly define a second critical dimension, and the first critical dimension is smaller than the second critical dimension. The first critical dimension and the second critical dimension are respectively the maximum lateral dimension of the electrode and the first field plate.

[0018] In one embodiment of the semiconductor structure manufacturing method of the present invention, the first barrier layer and the second barrier layer are one of an aluminum nitride (AlN) layer, a gallium monoxide (Ga₂O₃) layer, and an aluminum monoxide (Al₂O₃) layer.

[0019] In one embodiment of the semiconductor structure manufacturing method of the present invention, the first dielectric layer and the second dielectric layer are one of silicon nitride (SiN) layer, silicon oxide (SiO2) layer, silicon oxynitride (SiON) layer, and silicon carbide (SiC).

[0020] In one embodiment of the semiconductor structure manufacturing method of the present invention, the etch selectivity ratio of the first dielectric layer and the second dielectric layer relative to the first barrier layer and the second barrier layer is greater than 100.

[0021] In one embodiment of the semiconductor structure manufacturing method of the present invention, the substrate is one of a silicon substrate, a sapphire substrate, a silicon carbide substrate, a diamond substrate, and a gallium nitride substrate.

[0022] Other objects of the present invention, as well as the technical means and embodiments of the present invention, will be understood by those skilled in the art upon referring to the drawings and the embodiments described below. Simple Explanation of the Diagram

[0023] Figure 1 is a schematic diagram of a conventional normally-on high-electron-mobility transistor with a three-layer multi-field plate structure; Figures 2A to 2P are schematic diagrams illustrating the manufacturing process of a semiconductor structure according to an embodiment of the present invention; and Figure 3 is a schematic diagram of the manufacturing process steps of a semiconductor structure in one embodiment of the present invention. Implementation

[0024] The present invention will be explained below through embodiments. These embodiments are not intended to limit the implementation of the invention to any specific environment, application, or special method as described in the embodiments. Therefore, the descriptions of the embodiments are for illustrative purposes only and are not intended to limit the invention. It should be noted that in the following embodiments and drawings, elements not directly related to the present invention have been omitted and are not shown, and the dimensional relationships between the elements in the drawings are for ease of understanding only and are not intended to limit the actual scale.

[0025] Please refer to Figures 2A to 2P together, which show the manufacturing process of a semiconductor structure 1 according to an embodiment of the present invention, particularly a high electron mobility transistor and its manufacturing method. As shown in Figure 2A, a channel layer 110 and a barrier layer 120 are sequentially formed on a substrate 10. The substrate 10 can be one of a silicon substrate, a sapphire substrate, a silicon carbide substrate, a diamond substrate, a gallium nitride substrate, or a gallium arsenide substrate. The channel layer 110 is formed on the substrate 10, and a capping layer 120 is formed on the channel layer 110. A source electrode 130 and a drain electrode 140 are electrically connected to the channel layer 110. In a specific embodiment, a barrier layer (not shown) is further provided between the capping layer 120 and the channel layer 110; the lattice constant of this barrier layer is typically smaller than that of the channel layer 110. In this embodiment, the materials of the channel layer and the barrier layer include aluminum indium gallium nitride (AlxInyGa(1-xy)N), where 0 ≦ x < 1, 0 ≦ x + y ≦ 1. In this embodiment, the channel layer 110 can be a gallium nitride layer, the barrier layer can be an aluminum gallium nitride layer or an indium gallium nitride layer, and the capping layer is made of highly doped gallium nitride (GaN), but is not limited to this, directly forming a low-impedance ohmic contact with the source electrode and the drain electrode. Due to the spontaneous polarization formed by the channel layer and the barrier layer, and the piezoelectric polarization between the channel layer and the barrier layer, a two-dimensional electron gas 2DEG is generated at the heterojunction between the channel layer and the barrier layer.

[0026] Furthermore, the source electrode 130 and drain electrode 140 can be formed on the barrier layer using a metal evaporation process with a high-temperature alloy material for ohmic contact. This alloy material can be selected from one or a combination of titanium, aluminum, nickel, molybdenum, titanium nitride, and gold. Specifically, the source electrode and drain electrode can be metal alloy systems such as titanium / aluminum / nickel / gold, titanium / aluminum / titanium / gold, titanium / aluminum / molybdenum / gold, and titanium / aluminum / titanium nitride, but are not limited thereto. On the other hand, the structural design of the aforementioned channel layer can be varied according to the device requirements. For example, the semiconductor structure of this invention can be applied to pGaN E-mode HEMTs, pGaN D-mode HEMTs, normally-off HEMT devices with recessed gate structures or fluorine ion-doped (F-implanted) devices, and enhancement-mode and depletion-mode integrated circuits (E / D-mode ICs).

[0027] Referring to Figure 2B, a first barrier layer 150 deposition process is then performed, depositing the first barrier layer 150 above the channel layer 110 to cover the capping layer 120, source electrode 130, and drain electrode 140. The material of this first barrier layer can be, for example, but not limited to, aluminum nitride (AlN), gallium oxide (Ga₂O₃), and aluminum oxide (Al₂O₃). Subsequently, a first dielectric layer 151 is deposited to cover the first barrier layer 150, as shown in Figure 2C. The material of this first dielectric layer can be, for example, but not limited to, silicon nitride (SiN), silicon oxide (SiO₂), silicon oxynitride (SiON), and silicon carbide (SiC). It should be noted that the present invention appropriately selects the constituent materials of the barrier layer and the dielectric layer so that the first dielectric layer has a high etch selectivity relative to the first barrier layer. Ideally, this etching selectivity is greater than 100 to reduce the number of times the photomask is used in subsequent processes, and further eliminate the via structures required for electrical connections between electrodes and field plates, as well as between adjacent field plates in multilayer field plates, as detailed below.

[0028] Please refer to Figures 2D and 2E together. Next, a second barrier layer 152 is deposited to cover the first dielectric layer 151, and a second dielectric layer 153 is deposited to cover the second barrier layer 152. The second barrier layer and the first barrier layer are made of the same material. Similarly, the second dielectric layer and the first dielectric layer are also made of the same material. Therefore, the second dielectric layer has a height etch selectivity greater than 100 relative to the second barrier layer. Furthermore, this embodiment uses two sets of composite layers as an example, including a first barrier layer, a first dielectric layer, a second barrier layer, and a second dielectric layer, but it is not limited to this. In fact, the number of composite layers composed of barrier layers and dielectric layers can vary depending on the number of layers in the multilayer field board.

[0029] Please refer to Figures 2F and 2G together, which show the start of the layered patterned etching process. First, a patterned first photoresist layer HM1 is formed on the second dielectric layer 153. This patterned first photoresist layer HM1 is used as an etching mask to etch a portion of the second dielectric layer 153. The etching stops at the second barrier layer 152 by utilizing the high etch selectivity of the aforementioned dielectric layer and barrier layer, as shown in Figure 2G.

[0030] Referring to Figures 2H and 2I, after removing the first photoresist layer HM1, the patterned second dielectric layer 153 is used as an etching mask to etch and remove a portion of the second barrier layer 152, exposing a portion of the surface of the first dielectric layer 151. Next, referring to Figures 2J and 2K, a second patterned etching process is performed on the aforementioned patterned opening area. Specifically, a patterned second photoresist layer HM2 is formed on the patterned second dielectric layer 153 and the exposed portion of the first dielectric layer 151. Using this patterned second photoresist layer HM2 as an etching mask, a portion of the first dielectric layer 151 is etched. Utilizing the high etch selectivity of the aforementioned dielectric layer and barrier layer, the second patterned etching stops at the first barrier layer 150, as shown in Figure 2K.

[0031] Please refer to Figures 2L and 2M together. After removing the second photoresist layer HM2, the patterned first dielectric layer 151 is used as an etching mask to etch away part of the first barrier layer 150 and expose part of the surface of the cover layer 120. Next, referring to Figure 2N, a patterned third photoresist layer HM3 is formed on the exposed second dielectric layer 153 to define the outline of the uppermost field plate structure. As shown in Figure 2N, it is clearly shown that the first two patterning etching processes leave a first opening with a first critical dimension CD1 in the first barrier layer 150 and the first dielectric layer 151, respectively. A second opening with a second critical dimension CD2 is left in the second barrier layer 152 and the second dielectric layer 153. In addition, the third photoresist layer HM3 has a third opening with a third critical dimension CD3. The dimensions of these three openings increase progressively from bottom to top. That is, the first critical dimension CD1 of the first opening is smaller than the second critical dimension CD2 of the second opening, and the second critical dimension CD2 of the second opening is smaller than the third critical dimension CD3 of the third opening. This three-layer opening structure can serve as the outline basis for the subsequent gate and its field plate structure, as detailed later.

[0032] Next, a metal vapor deposition process is performed to form a thin metal film in the aforementioned three openings in one step. As shown in Figure 20, the thin metal film formed in the aforementioned three openings has a continuous stepped structure 160. The characteristic of this continuous stepped structure 160 is that each "step" structure is "partially overlapping and connected" with the adjacent "steps" above and below. The "partially overlapping and connected" refers to a physical configuration relationship in which there is partial direct physical contact and connection, without any intermediate structures such as vias. Specifically, this continuous stepped structure 160 has a gate electrode 162 and a multilayer field plate 164. The gate electrode 162 is partially physically and electrically connected to the multilayer field plate 164.

[0033] Specifically, in this embodiment, the first blocking layer 150 and the first dielectric layer 151 jointly define a contour of the gate electrode 162. In addition, the multi-layer field plate 164 includes a first field plate 1641 and a second field plate 1642. The second blocking layer 152 and the second dielectric layer 153 jointly define a contour of the first field plate 1641. In addition, the patterned third photoresist layer HM3 defines a contour of the second field plate 1642, as shown in FIG. 2P. That is, the first critical dimension CD1, the second critical dimension CD2, and the third critical dimension CD3 can also be defined as the maximum lateral dimensions of the gate electrode 162, the first field plate 1641, and the second field plate 1642, respectively, and there is a relationship of CD1 < CD2 < CD3 among them.

[0034] As described above, the gate electrode 162 and the multi-layer field plate 164 of the present invention are formed一次性 in the metal evaporation process. There is a "partial overlap connection" between the gate electrode 162 and the first field plate 1641. That is, the side end portion of the gate electrode is directly physically contacted and connected to the side end of the adjacent upper first field plate 1641. Similarly, there is also a "partial overlap connection" between the first field plate 1641 and the second field plate 1642. That is, the side end portion of the first field plate 1641 is directly physically contacted and connected to the side end of the adjacent upper second field plate 1642. Overall, the continuous stepped structure 160 is like a stepped shape, continuously extending and expanding upward and outward layer by layer from the bottom, and does not have a bridging structure such as a via hole configured like a traditional multi-layer field plate structure. Particularly, since the gate and multi-layer field plate structure of the present invention is a continuous stepped structure, and there is no "inserted" dielectric layer between the layers because there is no intermediate bridging structure configured between the layers. Therefore, for power devices such as HEMTs applying the present invention, the thickness of the dielectric layer can be further reduced, and the potential gradient can be controlled to relieve the concentration of the electric field and suppress the change of the dynamic resistance.

[0035] It should be noted that although the continuous stepped structure 160 in the semiconductor structure 1 above is illustrated by taking the gate electrode and the gate multi-layer field plate structure as an example. However, the continuous stepped structure and its manufacturing method disclosed in the present invention above are not limited thereto. In fact, according to the requirement of the power device to suppress the dynamic resistance, the above continuous stepped structure can be applied to other electrode structures. For example, introducing the continuous stepped structure without the intermediate structure of the via hole into the source electrode and / or the drain electrode can achieve the optimization result of saving the photomask exposure time and the corresponding cost.

[0036] It should be noted that the term "一次性" in the original text seems to be a misspelling. It is guessed that it should be "一次性地" or "一次性完成". The translation is made according to the original text. If there is an error in the original text, it may affect the accuracy of the translation.Please refer to Figure 3 below, which shows a schematic diagram of the process steps of the semiconductor structure of the present invention. First, in step S01, a channel layer is formed and disposed above a substrate. Second, in step S02, an electrode and a multilayer field plate are formed at the same time and disposed above the channel layer. The multilayer field plate is electrically connected to the electrode. The multilayer field plate has at least one first field plate and one second field plate. The first field plate is partially overlapped and connected to the electrode, and the second field plate is partially overlapped and connected to the first field plate, so that the electrode and the multilayer field plate together form a continuous stepped structure. The partially overlapped connection refers to a configuration in which there is partial direct physical contact and connection without any intermediate structure.

[0037] The above embodiments are merely illustrative of the implementation of the present invention and to explain its technical features, and are not intended to limit the scope of protection of the present invention. Any changes or equivalent arrangements that can be easily made by those skilled in the art are within the scope of the present invention, and the scope of protection of the present invention shall be determined by the scope of the patent application.

[0038] 1. Semiconductor Structure 10 substrate 110 Channel Layer 120 Covering Layer 130 Source Electrode 140 Drain Electrode 150 First barrier layer 151 First dielectric layer 152 Second Barrier Layer 153 Second dielectric layer 160 Continuous stepped structure 162 Gate electrode 164 Multi-layer slab 1641 First Session 1642 Second Session CD1 First Key Size CD2 Second Key Size CD3 Third Key Size FP1 First Rebound FP2 Second Round FP3 Third Round GM gate metal HM1 First Photoresist Layer HM2 Second Photoresist Layer HM3 Third Photoresist Layer V1 Through Hole V2 via V3 via

Claims

1. A semiconductor structure comprising: a substrate; a channel layer disposed above the substrate; an electrode disposed above the channel layer; and a multilayer field plate electrically connected to the electrode, having at least one first field plate and a second field plate, wherein the first field plate partially overlaps and is connected to the electrode, and the second field plate partially overlaps and is connected to the first field plate, such that the electrode and the multilayer field plate together form a continuous stepped structure, wherein... The partially overlapping connection refers to a configuration in which there is partial direct physical contact and connection without any intermediate structure; a first barrier layer and a first dielectric layer, wherein the first dielectric layer covers the first barrier layer and the first barrier layer and the first dielectric layer together define one contour of the electrode; and a second barrier layer and a second dielectric layer, wherein the second dielectric layer covers the second barrier layer, the second barrier layer covers the first dielectric layer, and the second barrier layer and the second dielectric layer together define one contour of the first field plate.

2. The semiconductor structure as described in claim 1, wherein the electrode is one of a gate electrode, a source electrode, and a drain electrode.

3. The semiconductor structure as claimed in claim 1, wherein the first barrier layer and the first dielectric layer jointly define a first critical dimension, the second barrier layer and the second dielectric layer jointly define a second critical dimension, and the first critical dimension is smaller than the second critical dimension, wherein the first critical dimension and the second critical dimension are respectively the maximum lateral dimensions of the electrode and the first field plate.

4. The semiconductor structure as claimed in claim 1, wherein the first barrier layer and the second barrier layer are one of an aluminum nitride (AlN) layer, a gallium monoxide (Ga2O3) layer, and an aluminum monoxide (Al2O3) layer.

5. The semiconductor structure as claimed in claim 1, wherein the first dielectric layer and the second dielectric layer are one of a silicon nitride (SiN) layer, a silicon oxide (SiO2) layer, a silicon oxynitride (SiON) layer, and a silicon carbide (SiC) layer.

6. The semiconductor structure as claimed in claim 1, wherein the substrate is one of a silicon substrate, a sapphire substrate, a silicon carbide substrate, a diamond substrate, and a gallium nitride substrate.

7. A method for manufacturing a semiconductor structure, comprising: forming a channel layer disposed above a substrate; and simultaneously forming an electrode and a multilayer field plate disposed above the channel layer, wherein the multilayer field plate is electrically connected to the electrode, the multilayer field plate having at least one first field plate and a second field plate, the first field plate partially overlapping and connected to the electrode, and the second field plate partially overlapping and connected to the first field plate, such that the electrode and the multilayer field plate together form a continuous stepped structure, wherein... The partially overlapping connection refers to a configuration where there is partial direct physical contact and connection without any intermediate structure. The formation of the electrode and the multilayer field plate includes the following steps: sequentially forming a first barrier layer and a first dielectric layer, disposed above the channel layer; sequentially forming a second barrier layer and a second dielectric layer, disposed above the first dielectric layer; patterning and etching the second dielectric layer, stopping the etching at the second barrier layer to expose a portion of the second barrier layer; and removing the exposed portion of the second barrier layer to expose a portion of the first dielectric layer. The first dielectric layer is patterned and etched until the etching stops at the first barrier layer to expose a portion of the first barrier layer; the exposed portion of the first barrier layer is removed; and metal is deposited to cover a portion of the channel layer, a portion of the first dielectric layer, and a portion of the second dielectric layer to form the electrode and the multilayer field plate in one step, wherein the first barrier layer and the first dielectric layer together define one outline of the electrode, and the second barrier layer and the second dielectric layer together define one outline of the first field plate.

8. A method for manufacturing a semiconductor structure as claimed in claim 7, wherein the steps of patterning and etching the first dielectric layer and removing the exposed portion of the first barrier layer jointly define a first critical dimension, the steps of patterning and etching the second dielectric layer and removing the exposed portion of the second barrier layer jointly define a second critical dimension, and the first critical dimension is smaller than the second critical dimension, wherein the first critical dimension and the second critical dimension are respectively the maximum lateral dimensions of the electrode and the first field plate.

9. A method for manufacturing a semiconductor structure as described in claim 7, wherein the first barrier layer and the second barrier layer are one of an aluminum nitride (AlN) layer, a gallium monoxide (Ga2O3) layer, and an aluminum monoxide (Al2O3) layer.

10. A method for manufacturing a semiconductor structure as described in claim 7, wherein the first dielectric layer and the second dielectric layer are one of a silicon nitride (SiN) layer, a silicon oxide (SiO2) layer, a silicon oxynitride (SiON) layer, and a silicon carbide (SiC) layer.

11. A method for manufacturing a semiconductor structure as described in claim 7, wherein the etch selectivity ratio of the first dielectric layer and the second dielectric layer relative to the first barrier layer and the second barrier layer is greater than 100.

12. A method for manufacturing a semiconductor structure as described in claim 7, wherein the substrate is one of a silicon substrate, a sapphire substrate, a silicon carbide substrate, a diamond substrate, and a gallium nitride substrate.

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