Wafer bonding equipment and wafer bonding method

Abstract

This invention discloses a wafer bonding apparatus and a wafer bonding method. The wafer bonding apparatus includes a carrier module, a transfer module, a limiting module, a bonding module, a control module, and a monitoring module. The carrier module is configured to carry a substrate. The transfer module is configured to transport multiple wafer components. When the transfer module is positioned between the carrier module and the limiting module, the control module drives the carrier module to perform a bonding action, or the limiting module is driven to perform a pressing action, so that the multiple wafer components of the transfer module contact the substrate. The control module drives the bonding module to project multiple light beams onto multiple adhesives on the substrate, and the control module drives the limiting module to detect the force applied to itself. The monitoring module monitors the bonding state of the multiple wafer components by using monitoring lasers with different delay times to detect the morphological parameters of the multiple wafer components, thereby monitoring the bonding state of the multiple wafer components in real time.

Description

Technical Field

[0001] This invention is a divisional application of Taiwan Patent Application No. 113139237 (application date: October 16, 2024), the full contents of which are incorporated into the patent specification of this invention for reference.

[0002] This invention relates to a bonding apparatus and a bonding method, and more particularly to a wafer bonding apparatus and a wafer bonding method for improving wafer bonding yield by monitoring and special bonding methods. Prior Technology

[0003] Laser welding technology is a recently emerging field. With the booming development of the automotive industry and consumer electronics, traditional welding processes are gradually becoming unable to meet manufacturing demands. Among them, laser galvanometer welding is a widely used technology that uses a laser as the welding heat source and deflects the laser beam through a galvanometer to weld the workpiece. Galvanometer welding equipment can be composed of a laser source, a galvanometer, a lens, a fixture, an air blowing mechanism, etc. The laser beam is deflected by the galvanometer, and the deflected laser beam is then focused onto the workpiece through the lens. The air blowing mechanism can disperse dust or improve the blackening of the weld joint.

[0004] However, in existing technologies, the workpiece is first placed on a temporary carrier plate and then laser-welded facing the substrate. Insufficient bonding between the temporary carrier plate and the substrate results in a gap between the workpiece and the substrate, preventing heat welding and reducing the welding yield.

[0005] Therefore, how to overcome the above-mentioned defects through structural design improvements has become one of the important issues that this project aims to address. Summary of the Invention

[0006] The technical problem to be solved by the present invention is to provide a wafer bonding apparatus and a wafer bonding method to address the shortcomings of the prior art.

[0007] To address the aforementioned technical problems, one technical solution adopted by the present invention is to provide a wafer bonding apparatus, comprising a carrier module, a transfer module, a limiting module, a bonding module, a control module, and a monitoring module. The carrier module is configured to carry at least one substrate. The transfer module is configured to transport multiple wafer components. The limiting module corresponds to the carrier module. The bonding module is adjacent to the limiting module. The control module is connected to the carrier module, the limiting module, and the bonding module. When the transfer module is located between the carrier module and the limiting module, the control module drives the carrier module to perform a bonding action, or the limiting module is driven to perform a pressing action, so that the multiple wafer components of the transfer module contact at least one substrate. Specifically, when the carrier module performs the bonding action or the limiting module performs the pressing action, the control module drives the bonding module to project multiple light beams onto at least one of the adhesives on the substrate, and the control module drives the limiting module to detect the force it is subjected to. A monitoring module is used to monitor the bonding state of the multiple wafer elements. The monitoring module uses monitoring lasers with different delay times to detect the morphological parameters of the multiple wafer elements to monitor their bonding state in real time.

[0008] To address the aforementioned technical problems, another technical solution adopted by the present invention is to provide a wafer bonding method, comprising the following steps: carrying at least one substrate using a carrier module; transporting multiple wafer elements using a transfer module; driving the carrier module to perform a bonding action using a control module, or driving the limiting module to perform a pressing action, so that the multiple wafer elements of the transfer module contact at least one substrate; driving the bonding module to project multiple light beams onto multiple adhesives on at least one substrate using the control module; and driving the limiting module to detect its own force using the control module.

[0009] One of the beneficial effects of the present invention is that the wafer bonding apparatus provided by the present invention can improve the yield of wafer bonding through the technical solution of "a carrier module configured to carry at least one substrate. A transfer module configured to transport multiple wafer elements. A limiting module corresponding to the carrier module. A bonding module adjacent to the limiting module. A control module connected to the carrier module, the limiting module and the bonding module. Wherein, when the transfer module is located between the carrier module and the limiting module, the control module drives the carrier module to perform a bonding action, or the limiting module is driven to perform a pressing action, so that the multiple wafer elements of the transfer module contact at least one substrate. Wherein, when the carrier module performs the bonding action or the limiting module performs the pressing action, the control module drives the bonding module to project multiple light beams onto multiple adhesives on at least one substrate, and the control module drives the limiting module to detect its own force".

[0010] Another beneficial effect of the present invention is that the wafer bonding method provided by the present invention can improve the yield of wafer bonding by means of the following technical solution: "carrying at least one substrate by a carrier module; transporting multiple wafer elements by a transfer module; driving the carrier module to perform a bonding action by a control module, or performing a pressing action by a limiting module, so that the multiple wafer elements of the transfer module contact at least one substrate; driving the bonding module to project multiple light beams onto multiple adhesives on at least one substrate by the control module; and driving the limiting module to detect its own force by the control module".

[0011] To further understand the features and technical content of the present invention, please refer to the following detailed description and drawings of the present invention. However, the drawings provided are for reference and illustration only and are not intended to limit the present invention. Simple Explanation of the Diagram

[0012] Figure 1 is a schematic diagram of the structure of the wafer bonding device according to the first embodiment of the present invention.

[0013] Figure 2 is a schematic diagram of the first usage state of the wafer bonding device according to the first embodiment of the present invention.

[0014] Figure 3 is a schematic diagram of the second usage state of the wafer bonding device according to the first embodiment of the present invention.

[0015] Figure 4 is a top view of the bonding module of the wafer bonding device according to the first embodiment of the present invention.

[0016] Figure 5 is a schematic diagram of the third usage state of the wafer bonding device according to the first embodiment of the present invention.

[0017] Figure 6 is a schematic diagram of the displacement path of the bonding module of the wafer bonding device according to the first embodiment of the present invention.

[0018] Figure 7 is a schematic diagram of the architecture of the emitter element of the wafer bonding device according to the first embodiment of the present invention.

[0019] Figure 8 is a schematic diagram of multiple pulse trains of a pulsed laser beam in the wafer bonding apparatus of the first embodiment of the present invention.

[0020] Figure 9 is a functional block diagram of the wafer bonding apparatus according to the first embodiment of the present invention.

[0021] Figure 10 is a schematic flowchart of the wafer bonding method according to the first embodiment of the present invention.

[0022] Figure 11 is a schematic diagram of the wafer bonding apparatus according to the second embodiment of the present invention.

[0023] Figure 12 is a schematic diagram of the wafer bonding equipment in use according to the second embodiment of the present invention.

[0024] Figure 13 is a top view of the bonding module of the wafer bonding device according to the second embodiment of the present invention.

[0025] Figure 14 is a functional block diagram of a wafer bonding apparatus according to a second embodiment of the present invention.

[0026] Figure 15 is a schematic diagram of the architecture of the monitoring module of the wafer bonding equipment of the present invention.

[0027] Figure 16 is a functional block diagram of the artificial intelligence system of the wafer bonding apparatus of the present invention.

[0028] Figure 17 is a schematic diagram of the cleaning module of the wafer bonding device of the present invention. Implementation

[0029] The following specific embodiments illustrate the implementation of the "wafer bonding apparatus and wafer bonding method" disclosed in this invention. Those skilled in the art can understand the advantages and effects of this invention from the content disclosed in this specification. This invention can be implemented or applied through other different specific embodiments, and various details in this specification can also be modified and changed based on different viewpoints and applications without departing from the concept of this invention. Furthermore, the accompanying drawings of this invention are for simple illustrative purposes only and are not depictions of actual dimensions; this is stated beforehand. The following embodiments will further describe the relevant technical content of this invention in detail, but the disclosed content is not intended to limit the scope of protection of this invention.

[0030] It should be understood that while terms such as "first," "second," and "third" may be used in this document to describe various components or signals, these components or signals should not be limited by these terms. These terms are primarily used to distinguish one component from another, or one signal from another. Furthermore, the term "or" as used herein may, depending on the context, include any combination of one or more of the associated listed items.

[0031] [First Embodiment]

[0032] Please refer to Figures 1 to 10, which are respectively a structural schematic diagram of the wafer bonding apparatus according to the first embodiment of the present invention, a schematic diagram of the first usage state, a schematic diagram of the second usage state, a top view of the bonding module, a schematic diagram of the third usage state, a schematic diagram of the displacement path of the bonding module, a schematic diagram of the architecture of the emitting element, a schematic diagram of multiple pulse trains of the pulsed laser beam, a functional block diagram, and a flowchart of the wafer bonding method. As shown in the above figures, the first embodiment of the present invention provides a wafer bonding apparatus Z, which includes a carrier module 1, a transfer module 2, a limiting module 3, a bonding module 4, and a control module 6.

[0033] As shown in Figures 1 to 3, the support module 1 of the present invention is configured to support at least one substrate element P. For example, the support module 1 may be a movable stage device with multi-axial displacement function, such as a movable stage device capable of displacement in three axes, namely the X-axis, Y-axis, and Z-axis, but is not limited thereto. The upper surface of the support module 1 may be used to support the substrate element P; wherein the substrate element P may be a circuit board having multiple solder pads and adhesive bodies P1 (e.g., solder balls or other types of conductive adhesives).

[0034] Next, as shown in Figures 1 to 3, the transfer module 2 of the present invention is configured to transport multiple wafer elements E. For example, the transfer module 2 may be a plate structure, such as a glass substrate, but is not limited thereto. One side of the transfer module 2 has an adhesive layer (not shown in the figures), which can be used to bond the multiple wafer elements E.

[0035] Next, referring to Figures 1 to 3, the limiting module 3 of the present invention corresponds to the bearing module 1. For example, the limiting module 3 may include a carrier plate element 30 and a plurality of first sensing elements 31. The carrier plate element 30 may correspond to the bearing module 1, and the carrier plate element 30 may be a plate structure, such as a high-strength laminated glass plate, but is not limited thereto. The plurality of first sensing elements 31 are disposed on at least one of the peripheral and central positions on the carrier plate element 30, and the plurality of first sensing elements 31 may be electrically connected to the control module 6. The plurality of first sensing elements 31 may be configured to detect the pressure on the carrier plate element 30; wherein, the first sensing element 31 may be a pressure sensor.

[0036] Next, referring to Figures 3 to 9, the bonding module 4 of the present invention is adjacent to the limiting module 3. For example, the bonding module 4 may include an emitting element 40, a beam adjustment element 41, an optical element 42, and a focusing element 43. The emitting element 40 may be connected to the control module 6, and the emitting element 40 may be used to provide at least one pulsed laser beam L2; wherein, the emitting element 40 may be a laser device for providing at least one pulsed laser beam L2, the pulse width of the pulsed laser beam L2 may be between 50 and 500 fs, the repetition frequency of the pulsed laser beam L2 may be between 0.5 and 10 GHz, and the pulse energy of the pulsed laser beam L2 may be between 100 and 1000 μJ. A beam adjustment element 41 corresponds to an emitting element 40. The beam adjustment element 41 is configured to receive at least one pulsed laser beam L2 and to convert the pulsed laser beam L2 into a modulated laser beam L3. The beam adjustment element 41 may be a laser beam expander, which can expand the laser spot of the pulsed laser beam L2 to generate the expanded modulated laser beam L3. An optical element 42 corresponds to the beam adjustment element 41. The optical element 42 is configured to receive the modulated laser beam L3 and to convert the modulated laser beam L3 into an array-type laser beam L4. The array-type laser beam L4 may be formed by arranging multiple modulated laser beams L3 in a specific array shape. The optical element 42 may be a diffractive optical element (DOE) or a top-hat beam shaper (DOE). The focusing element 43 corresponds to the optical element 42. The focusing element 43 is configured to receive the array-type laser beam L4 and to focus and project the array-type laser beam L4 onto multiple adhesive bodies P1. The focusing element 43 can be a flat-field focusing lens (F-Theta Lens). The focusing element 43 can focus each modulated laser beam L3 of the array-type laser beam L4 into a laser beam with a predetermined aspect ratio, and then project the array-type laser beam L4 onto the multiple adhesive bodies P1. The emitting element 40, the beam adjustment element 41, the optical element 42, and the focusing element 43 can be arranged in the same optical path.

[0037] Furthermore, as shown in Figures 5 to 9, the aforementioned transmitting element 40 includes a pulsed laser generator 400, a laser modulator 401, and a laser amplifier 402. The pulsed laser generator 400 is connected to the control module 6 and can be used to generate a laser light L0 with multiple pulse signals; that is, the pulsed laser generator 400 can be configured to generate a laser light L0 with multiple pulse signals S1 to Sn; wherein, the pulsed laser generator 400 can be a pulsed laser light generator. A laser modulator 401 is located adjacent to a pulsed laser generator 400. The laser modulator 401 is configured to increase the repetition frequency of the laser beam L0 and to generate a pulsed laser beam L1 with multiple bursts based on the increased laser beam L0. The laser modulator 401 can be an acousto-optic modulator (AOM) or other similar device, and the repetition frequency of the pulsed laser beam L1 can be between 0.5 and 10 GHz (e.g., any positive integer between 0.5 and 10 GHz), but is not limited thereto. A laser amplifier 402 is located adjacent to the laser modulator 401 and is configured to increase the pulse energy of the pulsed laser beam L1 to generate a pulsed laser beam L2. The multiple bursts include multiple pulse signals S1 to Sn, and the frequencies of the multiple pulse signals S1 to Sn are between 1 and 2000 kHz. Furthermore, as shown in Figure 8, the multiple pulse trains U1~Un include multiple pulse signals S1~Sn; that is, multiple pulse signals S1 form pulse train U1, multiple pulse signals S2 form pulse train U2, ..., multiple pulse signals Sn form pulse train Un, so that the multiple pulse trains U1~Un respectively form multiple pulse signals S1~Sn. The pulse width of the multiple pulse signals S1~Sn is between 50 and 500 fs (e.g., any positive integer between 50 and 500 fs), the number of multiple pulse signals S1~Sn is between 50 and 1000 (e.g., any positive integer between 50 and 1000), and the frequency of the multiple pulse signals S1~Sn is between 1 and 2000 kHz (e.g., any positive integer between 1 and 2000 kHz), but not limited to these limits. It is worth noting that the pulse width of the pulsed laser beam L2, the pulse energy of the pulsed laser beam L2, the frequencies of the multiple pulse signals S1~Sn, the repetition frequency of the pulsed laser beam L2, and the number of the multiple pulse signals S1~Sn can be adjusted appropriately according to actual needs.

[0038] Furthermore, as shown in Figure 5, the bonding module 4 may also include an analysis element 44, a beam splitter 45, and an image capturing element 46 (CCD). The analysis element 44 may be electrically connected to at least one of the emitting element 40 and the control module 6. The beam splitter 45 may correspond to the analysis element 44, and is configured to receive at least one pulsed laser beam L2; wherein, the beam splitter 45 may be a cubic beam splitter, a flat beam splitter, a polarizing beam splitter, or other type of beam splitting optical element; and the beam splitter 45 may be disposed between the beam adjustment element 41 and the optical element 42. The image capturing element 46 may correspond to the beam splitter 45, and is connected to the control module 6. The image capturing element 46 is configured to receive a surface image of at least one of at least one substrate P and at least one wafer element E reflected by the optical element 42 and the beam splitter 45; wherein, the image capturing element 46 may be a charge-coupled device (CCD).

[0039] Furthermore, as shown in Figures 3 and 4, the bonding module 4 may further include multiple first pressing elements 47 and multiple second sensing elements 48. The multiple first pressing elements 47 may be adjacent to the focusing element 43, and the multiple first pressing elements 47 may be electrically connected to the control module 6. Each first pressing element 47 may be configured to provide an airflow F to the limiting module 3; wherein, the first pressing element 47 may be a jet pusher or other type of blowing device, and each first pressing element 47 may have a jet hole 470 that can jet air towards the limiting module 3. The multiple second sensing elements 48 may be electrically connected to the control module 6, and the multiple second sensing elements 48 are configured to detect the tilt angle between the limiting module 3 and a horizontal direction; wherein, the second sensing elements 48 may be height or horizontal detectors or optical detectors, and the multiple second sensing elements 48 may be respectively disposed on the multiple first pressing elements 47 and the focusing element 43 of the bonding module 4. Furthermore, the first pressing element 47 may have a rotating part 47a and an air jet part 47b. The rotating part 47a can rotate the air jet part 47b, and the control module 6 can control the rotating part 47a to set the jet direction of the air jet part 47b toward the limiting module 3. That is, by means of the rotating part 47a, the jet jet part 47b can adjust the jet direction of the airflow F. The jet direction of the airflow F has a jet angle θ with the limiting module 3. By rotating the air jet part 47b by the rotating part 47a, the aforementioned jet angle θ can be changed to meet the user's engineering needs.

[0040] Next, as shown in Figure 9, the control module 6 of the present invention can be electrically connected to the bearing module 1, the limiting module 3, and the engaging module 4. The control module 6 can be a control device (e.g., a computer, but not limited thereto).

[0041] Therefore, when the transfer module 2 is located between the carrier module 1 and the limiting module 3, the control module 6 drives the carrier module 1 to perform a bonding action, or the limiting module 3 is driven to perform a pressing action, so that the multiple wafer elements E of the transfer module 2 contact at least one substrate P. Furthermore, when the carrier module 1 performs the bonding action or the limiting module 3 performs the pressing action, the control module 6 drives the bonding module 4 to project multiple light beams onto multiple adhesive bodies P1 on at least one substrate P, and the control module 6 drives the limiting module 3 to detect the force it experiences.

[0042] For example, as shown in Figures 1 to 9, when the wafer bonding apparatus Z of the present invention is bonding wafer elements E, the transfer module 2, on which multiple wafer elements E are disposed, can be transported to the top of the carrier module 1 by a transport device (not shown in the figures). Then, the control module 6 can drive the carrier module 1 to rise and approach the transfer module 2, so that multiple adhesives P1 on the substrate P contact the multiple wafer elements E; or, the control module 6 can control a pressing mechanism (not shown in the figures) to drive the carrier element 30 of the limiting module 3 to approach the transfer module 2 and drive the transfer module 2 to approach the carrier module 1, so that multiple wafer elements E contact the multiple adhesives P1 on the substrate P. At this time, the plurality of first sensing elements 31 on the carrier element 30 can sense the pressing force on the carrier element 30, and the control module 6 can determine whether the pressing force sensed by at least one first sensing element 31 is greater than or less than a predetermined pressing force (e.g., 70 kg). When the control module 6 determines that the pressing force sensed by the first sensing element 31 is greater than or less than the predetermined pressing force, it adjusts the upward force of the bearing module 1 to increase or decrease the pressing force applied to the carrier element 30. Conversely, the control module 6 can also adjust the pressing force applied by the carrier element 30 to the bearing module 1 by controlling the pressing mechanism.

[0043] Next, the bonding module 4 travels along a preset route P, heating multiple adhesives P1 on the substrate P to weld multiple chip elements E onto the substrate P; the preset route P can be in the shape of an "S". During the travel of the bonding module 4, multiple first pressing elements 47 can spray air towards the limiting module 3 through the air jet holes 470, indirectly pushing the transfer module 2, so that the multiple chip elements E below the transfer module 2 contact the multiple adhesives P1 on the substrate P; and then, the emitting element 40, the beam adjustment element 41, the optical element 42 and the focusing element 43 project an array-type laser beam L4 onto the multiple adhesives P1, so that the multiple adhesives P1 are heated and the multiple chip elements E can be connected to the surface of the substrate P.

[0044] It is worth mentioning that, after the bearing module 1 performs the joining action or the limiting module 3 performs the pressing action, the limiting module 3 or the transfer module 2 may not necessarily be completely parallel to the surface of the bearing module 1. That is, there may be local areas of the limiting module 3 or the transfer module 2 that are not parallel to the surface of the bearing module 1 (i.e., tilted, raised, or sunken). Therefore, the joining module 4 can detect the tilt angle or height of the limiting module 3 between the limiting module 3 and the horizontal direction H through multiple second sensing elements 48, and transmit the tilt angle or height signal to the control module 6. The control module 6 sets the value of the airflow thrust F provided by at least one second sensing element 48 according to this tilt angle or height signal. In other words, the control module 6 determines that the limiting module 3 may be tilted on the bearing module 1 based on the information fed back by at least one second sensing element 48, and therefore, the airflow thrust F applied by the first pressing element 47 needs to be adjusted accordingly. The control module 6 can set the force or amount of jet thrust provided by the first pressing element 47 to ensure that the limiting module 3 is parallel to the surface of the supporting module 1, thereby enabling the wafer element E to be actually soldered onto the substrate P. The first pressing element 47 may include multiple jet holes 470, as shown in Figure 4. The control module 6 can also set some of the jet holes 470 to spray air while others do not, to meet the actual needs of the processing.

[0045] When the beam splitter 45 receives the modulated laser beam L3, it projects a portion of the beam L3 onto the optical element 42 and another portion onto the analysis element 44, thereby generating a beam energy analysis signal. This beam energy analysis signal may include at least one of the following: a spot shape of the modulated laser beam L3, a spot position of the modulated laser beam L3, and a beam energy (e.g., intensity or temperature, but not limited thereto) of the modulated laser beam L3. Furthermore, the analysis element 44 can transmit the beam energy analysis signal to the transmitting element 40 or the control module 6, and the transmitting element 40 or the control module 6 can selectively adjust at least one of the spot shape, spot position, and beam energy of the modulated laser beam L3 based on the information from the beam energy analysis signal. It is worth mentioning that the beam splitter 45 can also be disposed between the emitting element 40 and the beam adjustment element 41, so that the emitting element 40 or the control module 6 can selectively adjust at least one of the beam shape, beam position and beam energy of the pulsed laser beam L2 according to the information of the beam energy analysis signal.

[0046] Therefore, the wafer bonding apparatus Z of the present invention, through the above-described technical solution, utilizes multiple sensors (such as the first sensing element 31 and the second sensing element 48) to detect the pressing force and whether the transfer module 2 and the limiting module 3 are uneven during the wafer bonding operation. Simultaneously, in conjunction with the array-type laser beam L4 and the first pressing element 47, each wafer element E can be securely and completely connected to the substrate P. Furthermore, the wafer bonding apparatus Z of the present invention can also use the image capturing element 46 to detect whether the wafer element E is skewed relative to the substrate P; or, by energizing the substrate P and simultaneously using the image capturing element 46 to check whether each wafer element E emits light, it can determine whether the wafer element E is securely connected to the substrate P.

[0047] It is worth mentioning that the emitting element 40 of the present invention is not limited to the laser device described above. The emitting element 40 of the present invention can also be a continuous wave (CW) high-power diode laser with a wavelength between 808 and 976 nm and a power between 100 and 3000 W. The laser spot length can be designed to match the sample and scanning path. Furthermore, the emission of light from the emitting element 40 can be controlled by an electronic switch, without using an acousto-optic modulator (AOM).

[0048] Furthermore, based on the above description and in conjunction with Figures 1 to 10, the present invention further provides a wafer bonding method, which includes the following steps:

[0049] Step S100: At least one substrate P is carried by a carrier module 1;

[0050] Step S102: Transport multiple wafer components E using a transfer module 2;

[0051] Step S104: A control module 6 drives the carrier module 1 to perform a bonding action, or a limiting module 3 is driven to perform a pressing action, so that the multiple chip elements E of the transfer module 2 contact at least one substrate P;

[0052] Step S106: The control module 6 drives the bonding module 4 to project multiple light beams onto multiple adhesive bodies P1 on at least one substrate P; and

[0053] Step S108: Use the control module 6 to drive the limit module 3 to detect the force it is subjected to.

[0054] However, the examples given above are merely one possible embodiment and are not intended to limit the invention.

[0055] [Second Embodiment]

[0056] Please refer to Figures 11 to 14, which are respectively structural schematic diagrams, usage schematic diagrams, top view schematic diagrams of the bonding module, and functional block diagrams of the wafer bonding device according to the second embodiment of the present invention. Please also refer to Figures 1 to 10. As shown in the figures, the wafer bonding device Z of this embodiment is generally similar to the wafer bonding device Z of the above embodiment. Therefore, the arrangement or operation of the same components will not be described again here. The difference between the wafer bonding device Z of this embodiment and the wafer bonding device Z of the first embodiment is that, in this embodiment, the support module 1 (moving stage) may also have at least one magnetic element 10, and the at least one magnetic element 10 is connected to the control module 6. The bonding module 4 also includes a plurality of second pressing elements 49 and a plurality of third sensing elements 50. The plurality of second pressing elements 49 are adjacent to the focusing element 43, and each second pressing element 49 is configured to be subjected to a magnetic attraction generated by at least one magnetic element 10 to apply a resisting force to the limiting module 3. The plurality of third sensing elements 50 are connected to the control module 6, and the plurality of third sensing elements 50 are configured to detect the tilt angle between the limiting module 3 and a horizontal direction.

[0057] For example, as shown in Figures 11 to 14, a magnetic element 10 may be disposed on the inner or outer surface of the bearing module 1; wherein the magnetic element 10 may be a magnet or an electromagnet, but is not limited thereto. The second pressing element 49 may be a magnetic roller. The third sensing element 50 may be a height or level detector or an optical detector, and multiple third sensing elements 50 may be respectively disposed on multiple second pressing elements 49 and the focusing element 43 of the bonding module 4.

[0058] Therefore, in the wafer bonding apparatus Z of the present invention, during the bonding of wafer elements E, the bonding module 4 travels along a preset route P, heating multiple adhesive bodies P1 on the substrate P to weld multiple wafer elements E onto the substrate P. During the travel of the bonding module 4, multiple second pressing elements 49, under the magnetic attraction of the magnetic element 10, roll against the surface of the limiting module 3, indirectly pushing the transfer module 2, causing multiple wafer elements E below the transfer module 2 to contact the multiple adhesive bodies P1 on the substrate P; wherein the force of the second pressing elements 49 rolling against the limiting module 3 is determined by the magnitude of the magnetic attraction provided by the magnetic element 10. Furthermore, the bonding module 4 projects an array-type laser beam L4 onto the multiple adhesive bodies P1 via an emitting element 40, a beam adjustment element 41, an optical element 42, and a focusing element 43, so that the multiple adhesive bodies P1 are heated, allowing the multiple wafer elements E to be connected to the surface of the substrate P.

[0059] Conversely, the bonding module 4 can also detect the tilt angle or height of the limiting module 3 between the limiting module 3 and the horizontal direction H using multiple third sensing elements 50, and transmit the tilt angle or height signal to the control module 6. The control module 6 correspondingly sets the magnetic attraction force of the magnetic element 10 to match the actual rolling force required by the second pressing element 49 on the limiting module 3. In other words, based on the information fed back by at least one second pressing element 49, the control module 6 determines that the limiting module 3 may tilt on the supporting module 1. Therefore, the rolling force applied by the second pressing element 49 to the limiting module 3 needs to be adjusted accordingly to ensure that the limiting module 3 is parallel to the surface of the supporting module 1.

[0060] Furthermore, the wafer bonding apparatus Z of the present invention may further include a monitoring module 200. Referring to FIG15, the monitoring module 200 may include a light emitting unit 202, a first light receiving unit 204, a second light receiving unit 206, an imaging device 208, and a control device 210. The light emitting unit 202, the first light receiving unit 204, the second light receiving unit 206, and the imaging device 208 are all electrically connected to the control device 210. The light emitting unit 202 is located on the first side of the substrate P and emits a monitoring laser Lm toward the substrate P. The first light receiving unit 204 is located on the first side of the substrate P and is used to receive the reflected light La of the first laser beam reflected by the substrate P to generate a reflected light signal. The second light receiving unit 206 is located on the second side of the substrate P and is used to receive the transmitted light Lb of the second laser beam passing through the substrate P to generate a transmitted light signal. The imaging device 208 is electrically connected to the first light receiving unit 204 and the second light receiving unit 206 to receive the reflected light La and the transmitted light Lb, and generate a detection result.

[0061] Furthermore, the monitoring module 200 may also include a mobile device (not shown). For example, a first optical receiving unit 204 is connected to a first mobile device so that the first optical receiving unit 204 can move in three-dimensional space; a second optical receiving unit 206 is connected to a second mobile device so that the second optical receiving unit 206 can move in three-dimensional space; and an optical emitting unit 202 is connected to a laser mobile device so that the optical emitting unit 202 can move in three-dimensional space. This allows adjustment of the light emission position of the optical emitting unit 202 and the light receiving positions of the first optical receiving unit 204 and the second optical receiving unit 206.

[0062] In one embodiment, the light emitting unit 202 can emit a first laser beam and a second laser beam toward the substrate P. The wavelength range of the first laser beam and the second laser beam is 300~2000 nm (e.g., any positive integer between 300 and 2000 nm), and the pulse width range of the first laser beam and the second laser beam is 50 fs to 50 ns (e.g., any positive integer between 50 fs and 50 ns). The first light receiving unit 204 and the second light receiving unit 206 are light wavefront sensors. The imaging device 208 is a waveform generator to generate a first detection waveform and a second detection waveform using the reflected light signal and the transmitted light signal received by the first light receiving unit 204 and the second light receiving unit 206.

[0063] In another embodiment, the first light receiving unit 204 and the second light receiving unit 206 are photoelastic sensors. The imaging device 208 generates a first stress distribution feature map and a second stress distribution feature map using the light signals received by the first light receiving unit 204 and the second light receiving unit 206. In one embodiment, the first light receiving unit 204 and the second light receiving unit 206 are laser vibrometers, and the imaging device 208 generates waveform maps using the reflected and transmitted ultrasound waves received by the first light receiving unit 204 and the second light receiving unit 206. In yet another embodiment, the first light receiving unit 204 and the second light receiving unit 206 are hyperspectral sensors, and the imaging device 208 generates detection spectrum maps using the transmitted and reflected light signals received by the first light receiving unit 204 and the second light receiving unit 206. In this embodiment, the first light receiving unit 204 and the second light receiving unit 206 receive a spectral range of 300 nm to 2500 nm (e.g., any positive integer between 300 and 2500 nm), and the spectrum is a continuous spectrum.

[0064] On the other hand, the wafer bonding apparatus Z of the present invention may also include an artificial intelligence system 300, which can be used to learn and pre-train the bonding parameters of the substrate P, and can also be used to automatically select a suitable monitoring module 200 according to the characteristics of the substrate P, and optimize the setting of multiple monitoring parameters of the monitoring module 200. For example, the artificial intelligence system 300 can select a suitable monitoring module 200 according to relevant data on the type, shape, size, thickness, and density of the substrate P.

[0065] In detail, as shown in Figure 16, the artificial intelligence system 300 may include at least a database unit 302, a learning and training unit 304, a parameter optimization and setting unit 306, and a monitoring module setting unit 308. The database unit 302 stores relevant data about the substrate P, such as the type, shape, size, thickness, and density of the substrate P. Furthermore, the database unit 302 can be connected to the Internet via a wireless network unit (not shown) and can further connect to a cloud platform to update relevant data or provide it to the deep learning algorithm used by the learning and training unit 304. The learning and training unit 304 is connected to the database unit 302 and uses a deep learning algorithm to learn and pre-train based on the relevant data in the database unit 302. The parameter optimization and setting unit 306 is connected to the database unit 302 and optimizes the welding parameters based on the relevant data regarding the type, shape, size, thickness, and density of the substrate P. The monitoring module setting unit 308 is connected to the database unit 302, and selects a suitable monitoring module 200 based on relevant data on the type, shape, size, thickness and density of the substrate P.

[0066] Furthermore, the monitoring module 200 can generate lasers, such as linear lasers or area lasers, using at least one optical element via the light emitting unit 202. This allows the monitoring module 200 to scan the substrate P using linear or area lasers, increasing monitoring efficiency. The monitoring module 200 can also detect the morphological parameters of the substrate P using lasers with different delay times to monitor the bonding state of the substrate P in real time. Further, the bonding module 4 can be adjusted according to the bonding state of the substrate P.

[0067] The wafer bonding apparatus of the present invention may further include a cleaning module 500. Referring to FIG. 17, the cleaning module 500 may be disposed above or adjacent to the carrier module 8. The present invention does not particularly limit the arrangement of the cleaning module 500. The cleaning module 500 may at least include a gas source 502 for storing a cleaning substance 506, and a gas nozzle 504 for supplying the cleaning substance 506 to the carrier module 8 or substrate P. For example, the gas source 502 may contain liquid carbon dioxide and be supplied to the gas nozzle 504 at a pressure between approximately 700 psi and approximately 900 psi (e.g., any positive integer between 700 psi and 900 psi), causing the liquid carbon dioxide to undergo isenthalpic expansion into a stream of solid carbon dioxide particles upon exiting the gas nozzle 504, thereby carrying away impurities from the carrier module 8 or substrate P. In one embodiment, the distance between the gas nozzle 504 and the substrate P may be between approximately 0.5 inches and approximately 2 inches (e.g., any positive integer between 0.5 inches and 2 inches). In one embodiment, the gas nozzle 504 and the substrate P may have tilt angles of about 15 degrees and 45 degrees (e.g., any positive integer between 15 and 45 inches) to avoid the momentum of the carbon dioxide particle flow being too high and damaging the substrate P.

[0068] However, the examples given above are merely one possible embodiment and are not intended to limit the invention.

[0069] [Beneficial Effects of the Examples]

[0070] One of the beneficial effects of the present invention is that the wafer bonding apparatus Z provided by the present invention can improve the yield of wafer bonding through the technical solution of "a carrier module 1 is configured to carry at least one substrate P. A transfer module 2 is configured to transport multiple wafer elements E. A limiting module 3 corresponds to the carrier module 1. A bonding module 4 is adjacent to the limiting module 3. A control module 6 is connected to the carrier module 1, the limiting module 3 and the bonding module 4. Wherein, when the transfer module 2 is located between the carrier module 1 and the limiting module 3, the control module 6 drives the carrier module 1 to perform a bonding action, or the limiting module 3 is driven to perform a pressing action, so that the multiple wafer elements E of the transfer module 2 contact at least one substrate P. Wherein, when the carrier module 1 performs a bonding action or the limiting module 3 performs a pressing action, the control module 6 drives the bonding module 4 to project multiple light beams onto multiple adhesive bodies P1 on at least one substrate P, and the control module 6 drives the limiting module 3 to detect its own force".

[0071] Another beneficial effect of the present invention is that the wafer bonding method provided by the present invention can improve the yield of wafer bonding by means of the following technical solution: "carrying at least one substrate P by a carrier module 1; transporting multiple wafer elements E by a transfer module 2; driving the carrier module 1 to perform a bonding action by a control module 6, or driving the limiting module 3 to perform a pressing action, so that the multiple wafer elements E of the transfer module 2 contact at least one substrate P; driving the bonding module 4 to project multiple light beams onto multiple adhesive bodies P1 on at least one substrate P by the control module 6; and driving the limiting module 3 to detect its own force by the control module 6".

[0072] Furthermore, the wafer bonding apparatus Z of the present invention, through the above-described technical solution, utilizes multiple sensors (such as a first sensing element 31, a second sensing element 48, and a third sensing element 50) to detect the pressing force and whether the transfer module 2 and the limiting module 3 are uneven during the wafer bonding operation. Simultaneously, it works in conjunction with an array-type laser beam L4 and a first pressing element 47 (or a second pressing element 49) to ensure that each wafer element E is securely and completely connected to the substrate P. Moreover, the wafer bonding apparatus Z of the present invention can also use an image capturing element 46 to detect whether the wafer element E is skewed relative to the substrate P; or, by energizing the substrate P and simultaneously using the image capturing element 46 to check whether each wafer element E emits light, it can determine whether the wafer element E is securely connected to the substrate P.

[0073] The content disclosed above is only a preferred and feasible embodiment of the present invention, and is not intended to limit the scope of the patent application of the present invention. Therefore, all equivalent technical changes made using the contents of the present invention specification and drawings are included in the scope of the patent application of the present invention.

[0074] Z: Wafer bonding equipment 1: Load-bearing module 10: Magnetic components 2: Transfer Module 3: Limiting module 30: Carrier board components 31: First sensing element 200: Monitoring Module 202: Light Emitting Unit 204: First optical receiving unit 206: Second optical receiving unit 208: Imaging Device 210: Control device 300: Artificial Intelligence System 302: Database Unit 304: Learning and Training Unit 306: Parameter Optimization Setting Unit 308: Monitoring Module Setting Unit 4: Joining Module 40: Transmitting element 400: Pulse Laser Generator 401: Laser Modulator 402: Laser Amplifier 41: Beam adjustment element 42: Optical Components 43: Focusing element 44: Analysis Element 45: Spectrometer 46: Image capturing element 47: First pressing element 47a: Rotating part 47b: Jet section 470: Air jet 48: Second sensing element 49: Second pressing element 50: Third sensing element 500: Cleaning Module 502: Gas Source 504: Gas Nozzle 506: Cleaning substances 6: Control Module L0: Laser light Lm: Surveillance laser La: Reflected light Lb: Transmitting light L1: Pulse laser beam L2: Pulsed laser beam L3: Modulated laser beam L4: Array-type laser beam E: Wafer Components F: Airflow H: Horizontal direction P: Substrate P1: Adhesive body S1~Sn: Pulse signal U1~Un: Pulse train θ: Injection angle

Claims

1. A wafer bonding apparatus, comprising: A carrier module configured to carry at least one substrate; A transfer module configured to transport multiple wafer components; A limiting module corresponding to the carrier module; a bonding module adjacent to the limiting module; a control module connected to the carrier module, the limiting module, and the bonding module; and a monitoring module for monitoring the bonding state of the plurality of wafer elements, wherein the monitoring module uses monitoring lasers with different delay times to detect the morphological parameters of the plurality of wafer elements to monitor the bonding state of the plurality of wafer elements in real time; wherein, when the transfer module is located between the carrier module and the limiting module, the control module drives the carrier module to perform a bonding action, or the limiting module is driven to perform a pressing action, so that the plurality of wafer elements of the transfer module contact at least one substrate; wherein, when the carrier module performs the bonding action or the limiting module performs the pressing action, the control module drives the bonding module to project a plurality of light beams onto a plurality of adhesives on at least one substrate, and the control module drives the limiting module to detect its own force. The bearing module has at least one magnetic element, which is connected to the control module. The engagement module further includes a plurality of first pressing elements and a plurality of second pressing elements, each of which is configured to be subjected to a magnetic attraction generated by the at least one magnetic element to apply a resisting force to the limiting module.

2. The wafer bonding apparatus as described in claim 1, wherein, When the carrier module performs the joining action, the carrier module moves toward the limiting module and drives at least one of the substrates to contact multiple wafer elements; wherein, when the limiting module performs the pressing action, the limiting module contacts and drives the transfer module to move toward the carrier module and drives multiple wafer elements to contact at least one of the substrates; wherein, the limiting module includes: a carrier element corresponding to the carrier module; and multiple first sensing elements disposed on the carrier element and connected to the control module, the multiple first sensing elements being configured to detect the pressure on the carrier element; wherein, the joining module further includes: multiple second sensing elements connected to the control module, the multiple second sensing elements being configured to detect the tilt angle between the limiting module and a horizontal direction, multiple first pressing elements connected to the control module, each of the first pressing elements being configured to provide an airflow to the limiting module; The assembly module further includes a plurality of third sensing elements connected to the control module, wherein the plurality of third sensing elements are configured to detect the tilt angle between the limiting module and a horizontal direction.

3. The wafer bonding apparatus as claimed in claim 1, wherein, The bonding module includes: an emitting element connected to the control module, the emitting element providing at least one pulsed laser beam; a beam adjustment element corresponding to the emitting element, configured to receive the at least one pulsed laser beam and convert the at least one pulsed laser beam into a modulated laser beam; an optical element corresponding to the beam adjustment element, configured to receive the modulated laser beam and convert the modulated laser beam into an array-type laser beam, wherein the array-type laser beam is formed by arranging multiple laser beams in a specific array shape; and a focusing element corresponding to the optical element, configured to receive the array-type laser beam and focus and project the array-type laser beam onto multiple adhesives; wherein the emitting element is a continuous high-power diode laser with a wavelength between 808 and 976 nm and a power between 100 and 3000 W; wherein the pulse width of the at least one pulsed laser beam is between 50 and 500 nm. The at least one pulsed laser beam has a repetition frequency between 0.5 and 10 GHz, and a pulse energy between 100 and 1000 μJ. The emitting element includes: a pulsed laser generator connected to the control module, the pulsed laser generator generating a laser beam having multiple pulse signals; a laser modulator adjacent to the pulsed laser generator, the laser modulator configured to increase the repetition frequency of the laser beam and to generate a pulse train laser beam having multiple pulse trains based on the increased laser beam; and a laser amplifier adjacent to the laser modulator, the laser amplifier configured to increase the pulse energy of the pulse train laser beam to generate the pulsed laser beam, wherein the multiple pulse trains include the multiple pulse signals, the frequencies of the multiple pulse signals being between 1 and 2000 kHz; wherein the bonding module further includes: an analysis element connected to the emitting element. A beam splitter, corresponding to the analysis element, is configured to receive at least one of the pulsed laser beams; and an image capturing element, corresponding to the beam splitter, is connected to the control module and configured to receive a surface image of at least one of the substrates and at least one of the wafer elements reflected by the optical element and the beam splitter; wherein, when the beam splitter receives at least one of the modulated laser beams, the beam splitter projects a portion of the modulated laser beam onto the optical element and another portion of the modulated laser beam onto the analysis element, so that the analysis element generates a beam energy analysis signal, and the analysis element transmits the beam energy analysis signal to the emitting element; wherein the beam energy analysis signal includes at least one of a spot shape, a spot position, and a beam energy.

4. The wafer bonding apparatus as claimed in claim 1, wherein, The monitoring module includes a light emitting unit, a light receiving unit, and a waveform generator. The light emitting unit emits a first laser beam and a second laser beam toward the plurality of chip elements. The wavelength range of the first laser beam and the second laser beam is 300~2000 nm, and the pulse width range of the first laser beam and the second laser beam is 50 fs to 50 ns. The light receiving unit includes a first optical wavefront sensor and a second optical wavefront sensor. The first optical wavefront sensor is located on a first side of the plurality of chip elements and receives reflected light from the first laser beam reflected by the plurality of chip elements to generate a reflected light signal. The second optical wavefront sensor is located on a second side of the plurality of chip elements. The light emitting unit emits the second laser beam toward the plurality of chip elements, and the second optical wavefront sensor receives transmitted light from the second laser beam passing through the plurality of chip elements to generate a transmitted light signal. The waveform generator is electrically connected to the first and second optical wavefront sensors to receive the reflected light signal and generate a first detection waveform, and to receive the transmitted light signal and generate a second detection waveform. The first optical wavefront sensor is connected to a first moving device to move it in a three-dimensional space. The second optical wavefront sensor is connected to a second moving device to move it in the three-dimensional space. The bonding module is connected to a laser moving device to move the bonding module in the three-dimensional space.

5. The wafer bonding apparatus as claimed in claim 1, wherein, The monitoring module includes a light emitting unit, a light receiving unit, and an imaging device. The light emitting unit emits a first laser beam and a second laser beam toward the plurality of chip elements. The wavelength range of the first laser beam and the second laser beam is 300~2000 nm, and the pulse width range of the first laser beam and the second laser beam is 50 fs to 50 ns. The light receiving unit includes a first photoelastic sensor and a second photoelastic sensor. The first photoelastic sensor is located on a first side of the plurality of chip elements and receives reflected light from the first laser beam reflected by the plurality of chip elements to generate a reflected light signal. The second photoelastic sensor is located on a second side of the plurality of chip elements. The light emitting unit emits the second laser beam toward the plurality of chip elements, and the second photoelastic sensor receives transmitted light from the second laser beam passing through the plurality of chip elements to generate a transmitted light signal. The imaging device is electrically connected to the first photoelastic sensor and the second photoelastic sensor to receive the reflected light signal and generate a first stress distribution feature map, and to receive the transmitted light signal and generate a second stress distribution feature map; the first photoelastic sensor is connected to a first moving device to move the first photoelastic sensor in a three-dimensional space; the second photoelastic sensor is connected to a second moving device to move the second photoelastic sensor in the three-dimensional space; and the light emitting unit is connected to a laser moving device to move the light emitting unit in the three-dimensional space.

6. The wafer bonding apparatus as claimed in claim 1, wherein, The monitoring module includes a light emitting unit, a light receiving unit, and an imaging device, wherein the imaging device is a light waveform generator. The light emitting unit emits a first laser pulse and a second laser pulse toward the plurality of chip elements, wherein the wavelength range of the first laser pulse and the second laser pulse is 300 nm to 2000 nm, and the pulse width range of the first laser pulse and the second laser pulse is 50 fs to 50 ns. The light receiving unit includes a first laser vibrometer and a second laser vibrometer. The first laser vibrometer is located on a first side of the plurality of chip elements and receives reflected light from the first laser pulse reflected by the plurality of chip elements to generate a reflected ultrasound wave. The second laser vibrometer is located on a second side of the plurality of chip elements. The light emitting unit emits the second laser pulse toward the plurality of chip elements, and the second laser vibrometer receives transmitted light from the second laser pulse passing through the plurality of chip elements to generate a transmitted ultrasound wave. The waveform generator is electrically connected to the first laser vibrometer and the second laser vibrometer to receive the reflected ultrasound waves and generate a first waveform, and to receive the transmitted ultrasound waves and generate a second waveform. The first laser vibrometer is connected to a first moving device to move the first laser vibrometer in a three-dimensional space. The second laser vibrometer is connected to a second moving device to move the second laser vibrometer in the three-dimensional space. The light emitting unit is connected to a laser moving device to move the light emitting unit in the three-dimensional space.

7. The wafer bonding apparatus as claimed in claim 1, wherein, The monitoring module includes a light emitting unit, a light receiving unit, and an imaging device, which is a hyperspectral generator. The light emitting unit emits a first laser beam and a second laser beam toward the plurality of chip elements. The light receiving unit includes a first hyperspectral sensor and a second hyperspectral sensor. The first hyperspectral sensor is located on a first side of the plurality of chip elements and receives reflected light from the first laser beam reflected by the plurality of chip elements to generate a reflected light signal. The second hyperspectral sensor is located on a second side of the plurality of chip elements. The light emitting unit emits the second laser beam toward the plurality of chip elements, and the second hyperspectral sensor receives transmitted light from the second laser beam passing through the plurality of chip elements to generate a transmitted light signal. The hyperspectral generator is electrically connected to the first and second hyperspectral sensors to receive the reflected light signal and generate a first detection spectrum, and to receive the transmitted light signal and generate a second detection spectrum. The first hyperspectral sensor is connected to a first moving device to move the first hyperspectral sensor in a three-dimensional space; the second hyperspectral sensor is connected to a second moving device to move the second hyperspectral sensor in the three-dimensional space; the light emitting unit is connected to a laser moving device to move the light emitting unit in the three-dimensional space; the first hyperspectral sensor and the second hyperspectral sensor receive spectral ranges from 300 nm to 2500 nm, wherein the spectrum is a continuous spectrum.

8. The wafer bonding apparatus as claimed in claim 1, wherein, The wafer bonding equipment further includes an artificial intelligence system for learning and pre-training the welding parameters of the plurality of wafer components, automatically selecting a suitable monitoring module based on the characteristics of the plurality of wafer components, and optimizing the settings of multiple monitoring parameters of the monitoring module. The artificial intelligence system includes: a database unit containing relevant data on the type, shape, size, thickness, and density of the plurality of wafer components, wherein the database unit is connected to a cloud platform via the Internet to update the relevant data; a learning and training unit connected to the database unit, which uses a deep learning algorithm to learn and pre-train based on the relevant data in the database unit; a parameter optimization setting unit connected to the database unit to optimize the welding parameters based on the relevant data on the type, shape, size, thickness, and density of the plurality of wafer components; and a monitoring module setting unit connected to the database unit to select a suitable monitoring module based on the relevant data on the type, shape, size, thickness, and density of the plurality of wafer components.

9. The wafer bonding apparatus as claimed in claim 1, wherein, The wafer bonding apparatus further includes a cleaning module, which includes a gas source and a gas nozzle. The gas nozzle is connected to the gas source to supply a cleaning substance to the carrier module to remove impurities on the carrier module or the substrate.

Images