Conductive structure including capacitor structure and method for manufacturing the same

Abstract

This application discloses a conductive structure and its fabrication method. The conductive structure includes a first support layer, a second support layer, a first electrode layer, an intermediate dielectric layer, and a second electrode layer. The second support layer is disposed on and spaced apart from the first support layer. The first electrode layer includes a first portion. The first portion includes a first region and a second region, wherein the first region contacts the first support layer, and the second region contacts the second support layer. The thickness of the first region is substantially equal to the thickness of the second region. The intermediate dielectric layer is disposed on the first electrode layer. The second electrode layer is disposed on the intermediate dielectric layer.

Description

Technical Field

[0001] This application claims priority to U.S. Patent Application No. 18 / 804,397 (i.e., priority date "August 14, 2024"), the contents of which are incorporated herein by reference in their entirety.

[0002] This disclosure relates to a conductive structure and its preparation method, and in particular to a conductive structure including a capacitor structure and its preparation method. Prior Technology

[0003] To achieve high integration density in electronic components (such as capacitors), the size of the conductive vias must be reduced, and the aspect ratio (height / width) of the vias must be increased. Conductive vias are fabricated by depositing a thin conductive layer on the sidewalls of the via. However, during subsequent etching, a portion of the thin conductive layer may be damaged or broken, causing a short circuit between adjacent vias.

[0004] The above description of "prior art" is merely to provide background information and does not constitute an admission that the above description of "prior art" discloses the subject matter of this disclosure. It does not constitute prior art to this disclosure, and no description of the above description of "prior art" should be considered part of this case. Summary of the Invention

[0005] One aspect of this disclosure provides a conductive structure. The conductive structure includes a first support layer, a second support layer, a first electrode layer, an intermediate dielectric layer, and a second electrode layer. The second support layer is disposed on and spaced apart from the first support layer. The first electrode layer includes a first portion. The first portion includes a first region for contacting the first support layer and a second region for contacting the second support layer. The thickness of the first region and the thickness of the second region are substantially equal. The intermediate dielectric layer is disposed on the first electrode layer. The second electrode layer is disposed on the intermediate dielectric layer.

[0006] Another aspect of this disclosure provides a conductive structure. The conductive structure includes a first support layer, a second support layer, a first electrode layer, an intermediate dielectric layer, and a second electrode layer. The second support layer is disposed on and spaced apart from the first support layer. The first electrode layer includes a first portion and a second portion, with the second portion substantially parallel to the first portion. The first portion and the second portion contact the first support layer. The first portion includes an upper portion that is higher than the second portion. The upper portion of the first portion of the first electrode layer has a first side surface and a second side surface, wherein the first side surface contacts the second support layer, and the second side surface is opposite to the first side surface. The second side surface of the upper portion of the first portion is an unetched surface. A top surface of the second portion is an etched surface. The intermediate dielectric layer is disposed on the first electrode layer. The second electrode layer is disposed on the intermediate dielectric layer.

[0007] Another aspect of this disclosure provides a method for fabricating a conductive structure. The method includes providing a substrate material comprising a first support layer, a second support layer, and a sacrificial material disposed between the first and second support layers. The method further includes forming a plurality of holes penetrating the second support layer and extending to the first support layer. The method also includes forming a first electrode layer within the plurality of holes. Furthermore, the method includes forming a plurality of buffer materials within the plurality of holes to cover the first electrode layer. The method further includes removing a portion of the second support layer, a portion of the first electrode layer, and a portion of the plurality of buffer materials to form a plurality of openings extending through the second support layer and exposing the plurality of buffer materials and the sacrificial material. The method also includes removing the plurality of buffer materials and the sacrificial material through the plurality of openings. The method further includes forming an intermediate dielectric layer on the first electrode layer. The method also includes forming a second electrode layer on the intermediate dielectric layer.

[0008] The foregoing has provided a fairly broad overview of the technical features and advantages of this disclosure, so as to provide a better understanding of the detailed description of this disclosure that follows. Other technical features and advantages constituting the subject matter of this disclosure will be described below. Those skilled in the art to which this disclosure pertains will understand that the concepts and specific embodiments disclosed below can be readily used to modify or design other structures or processes to achieve the same purpose as this disclosure. Those skilled in the art to which this disclosure pertains will also understand that such equivalent constructions cannot depart from the spirit and scope of this disclosure as defined in the appended claims. Simple Explanation of the Diagram

[0009] A more comprehensive understanding of the disclosure of this application can be obtained by referring to the detailed description and considering the diagrams, where similar reference numbers refer to similar elements in the whole diagram. Figure 1 is a flowchart illustrating the preparation method of conductive structures in some embodiments of this disclosure. Figure 2 is a schematic diagram illustrating the fabrication process of the conductive structure in some embodiments of this disclosure. Figure 3 is a schematic diagram illustrating the fabrication process of the conductive structure in some embodiments of this disclosure. Figure 4 is a schematic diagram illustrating the fabrication process of the conductive structure in some embodiments of this disclosure. Figure 5A is a cross-sectional view illustrating the fabrication process of the conductive structure in some embodiments of this disclosure. Figure 5B is a top view illustrating the fabrication process of conductive structures according to some embodiments of this disclosure. Figure 5C is an enlarged view illustrating the fabrication process of the conductive structure in some embodiments of this disclosure. Figure 6A is a cross-sectional view illustrating the fabrication process of the conductive structure in some embodiments of this disclosure. Figure 6B is a top view illustrating the fabrication process of conductive structures according to some embodiments of this disclosure. Figure 6C is an enlarged view illustrating the fabrication process of the conductive structure in some embodiments of this disclosure. Figure 7A is a cross-sectional view illustrating the fabrication process of the conductive structure in some embodiments of this disclosure. Figure 7B is a top view illustrating the fabrication process of conductive structures in some embodiments of this disclosure. Figure 8 is a schematic diagram illustrating the fabrication process of the conductive structure in some embodiments of this disclosure. Figure 9A is a cross-sectional view illustrating the fabrication process of the conductive structure in some embodiments of this disclosure. Figure 9B is a top view illustrating the fabrication process of conductive structures according to some embodiments of this disclosure. Figure 9C is an enlarged view illustrating the fabrication process of the conductive structure in some embodiments of this disclosure. Figure 10 is a schematic diagram illustrating the fabrication process of the conductive structure in some embodiments of this disclosure. Figure 11 is a schematic diagram illustrating the fabrication process of the conductive structure in some embodiments of this disclosure. Figure 12A is a schematic diagram illustrating the fabrication process of the conductive structure in some embodiments of this disclosure. Figure 12B is an enlarged view illustrating the fabrication process of the conductive structure in some embodiments of this disclosure. Implementation

[0010] The embodiments or examples of the present disclosure illustrated in the accompanying drawings will now be described in specific language. It should be understood that this is not intended to limit the scope of the disclosure. Any changes or modifications to the described embodiments, and any further application of the principles described herein, should be considered as things that would be commonly done by one of ordinary skill in the art related to the content of this disclosure. Reference numerals may be repeated throughout the embodiments, but this does not necessarily mean that a feature of one embodiment is applicable to another embodiment, even if they share the same reference numerals.

[0011] It should be understood that although the terms first, second, third, etc., can be used to describe various elements, components, regions, layers, or parts, these elements, components, regions, layers, or parts are not limited by these terms. Rather, these terms are only used to distinguish one element, component, region, layer, or part from another. Therefore, the first element, component, region, layer, or part discussed below can be referred to as the second element, component, region, layer, or part without departing from the teachings of the present invention.

[0012] The terminology used herein is for describing specific embodiments only and is not intended to limit the scope of the invention. As used herein, the singular forms "a," "an," and "the" also include the plural forms unless the context clearly indicates otherwise. It should be further understood that the terms "comprising" and "including," when used in this specification, indicate the presence of the stated feature, integer, step, operation, element, or component, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, or groups thereof.

[0013] Figure 1 is a flowchart illustrating a method 900 for preparing a conductive structure 1 according to some embodiments of this disclosure. Figures 2, 3, 4, 8, 10, 11, and 12A are schematic diagrams; Figures 5A, 6A, 7A, and 9A are cross-sectional views; Figures 5B, 6B, 7B, and 9B are top views; and Figures 5C, 6C, 9C, and 12B are enlarged views, illustrating various stages of a method for preparing a conductive structure 1 according to one embodiment of this disclosure. For better understanding of the various aspects of this disclosure, at least some of the figures have been simplified.

[0014] Please refer to Figures 1 to 3. In step S901, a substrate material 6 can be provided.

[0015] Referring to Figure 2, a lower sacrificial material 51 may be formed or disposed on a first support layer 11. A third support layer 13 may be formed or disposed on the lower sacrificial material 51. The lower sacrificial material 51 may also be referred to as the "first sacrificial layer" or "bottom sacrificial layer." The first support layer 11 may also be referred to as the "lower support layer" or "bottom support layer." The third support layer 13 may also be referred to as the "intermediate support layer" or "intermediate support layer." In some embodiments, the first support layer 11 may be formed or disposed on the top surface of a conductive layer. The conductive layer may include a suitable conductive material. For example, the conductive layer may include tungsten (W), copper (Cu), aluminum (Al), silver (Ag), alloys thereof, or combinations thereof.

[0016] The first support layer 11 may have a top surface 111 and a bottom surface 112 opposite to the top surface 111. The bottom surface 112 of the first support layer 11 may face and contact the top surface of the conductive layer. For example, the first support layer 11 may be a dielectric layer or an insulating layer, and may include silicon nitride (Si3N4 or SiN), silicon dioxide (SiO2), silicon oxynitride (N2OSi2), silicon oxide (SiON), tantalum pentoxide (Ta2O5), aluminum oxide (Al2O3), strontium bismuth tantalum oxide (SrBi2Ta2O9, SBT), barium strontium titanium oxide (BaSrTiO3, BST), or combinations thereof.

[0017] The lower sacrificial material 51 may be formed or disposed on the top surface 111 of the first support layer 11. The lower sacrificial material 51 may be in direct contact with the top surface 111 of the first support layer 11. The lower sacrificial material 51 may include a dielectric or insulating material, such as a nitride, oxide, oxynitride amorphous silicon, polycrystalline silicon, or other suitable materials. For example, the lower sacrificial material 51 may include borosilicate glass (BPSG), which is an oxide doped with boron and phosphorus. The lower sacrificial material 51 may be formed by deposition. The material of the lower sacrificial material 51 is different from the material of the first support layer 11.

[0018] A third support layer 13 may be formed or disposed on the lower sacrificial material 51. Therefore, the third support layer 13 may be disposed on and spaced apart from the first support layer 11. The third support layer 13 may have a top surface 131 and a bottom surface 132 opposite to the top surface 131. The bottom surface 132 of the third support layer 13 may face and contact the top surface of the lower sacrificial material 51. For example, the third support layer 13 may be a dielectric layer or an insulating layer, and may include silicon nitride (Si₃N₄ or SiN), silicon dioxide (SiO₂), silicon oxynitride (N₂OSi₂), silicon oxide (SiON), tantalum pentoxide (Ta₂O₅), aluminum oxide (Al₂O₃), strontium bismuth tantalum oxide (SrBi₂Ta₂O₉, SBT), barium strontium titanium oxide (BaSrTiO₃, BST), or combinations thereof. The material of the third support layer 13 may be different from the material of the lower sacrificial material 51. The material of the third support layer 13 may be the same as or different from the material of the first support layer 11.

[0019] Referring to Figure 3, the third support layer 13 can be patterned. That is, a portion of the third support layer 13 can be removed to expose a portion of the lower sacrificial material 51. Then, an upper sacrificial material 52 can be formed or disposed on the third support layer 13. Therefore, a portion of the upper sacrificial material 52 can contact a portion of the lower sacrificial material 51. The upper sacrificial material 52 can partially contact the lower sacrificial material 51. Then, a second support layer 12 can be formed or disposed on the upper sacrificial material 52. The upper sacrificial material 52 can also be referred to as the "second sacrificial layer" or "top sacrificial layer." The second support layer 12 can also be referred to as the "upper support layer" or "top support layer."

[0020] The upper sacrificial material 52 may be formed or disposed on the top surface 131 of the third support layer 13. The upper sacrificial material 52 may be in direct contact with the top surface 131 of the third support layer 13. The upper sacrificial material 52 may include a dielectric or insulating material, such as a nitride, oxide, oxynitride amorphous silicon, polycrystalline silicon, or other suitable materials. For example, the upper sacrificial material 52 may include borosilicate glass (BPSG), which is an oxide doped with boron and phosphorus. The upper sacrificial material 52 may be formed by deposition. The material of the upper sacrificial material 52 may be the same as or different from the material of the lower sacrificial material 51.

[0021] The second support layer 12 may be formed or disposed on the upper sacrificial material 52. Therefore, the second support layer 12 may be disposed above and spaced apart from the third support layer 13 and the first support layer 11. The second support layer 12 may have a top surface 121 and a bottom surface 122 opposite to the top surface 121. The bottom surface 122 of the second support layer 12 may face and contact a top surface of the upper sacrificial material 52. For example, the second support layer 12 may be a dielectric layer or an insulating layer, and may include silicon nitride (Si3N4 or SiN), silicon dioxide (SiO2), silicon oxynitride (N2OSi2), silicon oxide (SiON), tantalum pentoxide (Ta2O5), aluminum oxide (Al2O3), strontium bismuth tantalum oxide (SrBi2Ta2O9, SBT), barium strontium titanium oxide (BaSrTiO3, BST), or combinations thereof. The material of the second support layer 12 may be the same as or different from the material of the first support layer 11. The thickness of the second support layer 12 may be greater than the thickness of the first support layer 11 and the thickness of the third support layer 13.

[0022] Simultaneously, a base material 6 may be provided. The base material 6 may include a first support layer 11, a second support layer 12, and a sacrificial material 50 (including a lower sacrificial material 51 and an upper sacrificial material 52) disposed between the first support layer 11 and the second support layer 12. In some embodiments, the base material 6 may include a first support layer 11, a lower sacrificial material 51, a third support layer 13, an upper sacrificial material 52, and a second support layer 12. The lower sacrificial material 51 may be disposed between the first support layer 11 and the third support layer 13. The upper sacrificial material 52 may be disposed between the third support layer 13 and the second support layer 12.

[0023] Referring to Figures 1 and 4, in step S902, a plurality of holes 61 may be formed in the substrate material 6. The holes 61 may pass through the second support layer 12 and extend to the first support layer 11. Therefore, the holes 61 may pass through the second support layer 12, the upper sacrificial material 52, the third support layer 13, and the lower sacrificial material 51. The holes 61 may not pass through the first support layer 11. Therefore, in a cross-sectional view, the second support layer 12 may include a plurality of portions 124, and the third support layer 13 may include a plurality of portions 134. That is, the holes 61 may be blocked by the first support layer 11. In some embodiments, the holes 61 may be formed from the top surface 121 of the second support layer 12 through a photolithography and etching process. The holes 61 may gradually decrease in size towards the first support layer 11. In some embodiments, the holes 61 may include a first hole 61a and a second hole 61b.

[0024] Referring to Figures 1, 5A, 5B, and 5C, in step S903, a first electrode layer 2 may be formed or disposed in the hole 61. Figure 5B shows a top view of Figure 5A. Alternatively, Figure 5A shows a cross-sectional view along section line II in Figure 5B. Figure 5C shows an enlarged view of region "A" in Figure 5A.

[0025] A first electrode layer 2 may be formed or disposed on the inner sidewall of the hole 61 to define a plurality of central holes 62 in the hole 61. The first electrode layer 2 may include a conductive metal, such as titanium nitride (TiN), titanium silicon nitride (TiSiN), or copper. The first electrode layer 2 may be formed by deposition. The first electrode layer 2 may have a substantially uniform thickness.

[0026] For example, the first electrode layer 2 may include a first portion 2a, a second portion 2b, a third portion 2c, a fourth portion 2d, a connecting portion 2e, and a connecting portion 2f. The first portion 2a, the second portion 2b, the third portion 2c, and the fourth portion 2d may be substantially parallel and spaced apart from each other.

[0027] The first part 2a, the second part 2b, and the connecting part 2e can be disposed in the first hole 61a. The first part 2a and the second part 2b can be disposed on the inner sidewall of the first hole 61a. As shown in Figure 5B, the first part 2a and the second part 2b can be two parts of the same annular shape. That is, from the top view, the first part 2a and the second part 2b of the first electrode layer 2 can together define a complete circle.

[0028] Furthermore, the connecting portion 2e can be disposed on the bottom wall of the first hole 61a and can connect the first portion 2a and the second portion 2b. The first portion 2a, the second portion 2b and the connecting portion 2e can be formed simultaneously and integrally to define the first central hole 62a in the first hole 61a.

[0029] The first portion 2a may be disposed within the sacrificial material 50 (including the lower sacrificial material 51 and the upper sacrificial material 52) and may extend between the first support layer 11 and the second support layer 12. The first portion 2a may include a first region 21a (e.g., a lower portion), a second region 22a (e.g., an upper portion), and a third region 23a (e.g., an intermediate portion). The first region 21a (e.g., the lower portion) may have a first side 211 and a second side 212 opposite to the first side 211. The first side 211 of the first region 21a (e.g., the lower portion) may contact the first support layer 11 and the lower sacrificial material 51. The second side 212 of the first region 21a (e.g., the lower portion) may face the first central hole 62a.

[0030] The second region 22a (e.g., the upper part) may have a first side 221 and a second side 222 opposite to the first side 221. The first side 221 of the second region 22a (e.g., the upper part) may contact the second support layer 12 and the upper sacrificial material 52. The second side 222 of the second region 22a (e.g., the upper part) may face the first central hole 62a.

[0031] A third region 23a (e.g., the middle portion) may be disposed between a first region 21a (e.g., the lower portion) and a second region 22a (e.g., the upper portion). The third region 23a (e.g., the middle portion) may have a first side 231 and a second side 232 opposite to the first side 231. The first side 231 of the third region 23a (e.g., the middle portion) may contact the third support layer 13, the upper sacrificial material 52, and the lower sacrificial material 51. The second side 232 of the third region 23a (e.g., the middle portion) may face the first central hole 62a.

[0032] The first side 211 of the first region 21a of the first part 2a can be substantially aligned with the first side 221 of the second region 22a and the first side 231 of the third region 23a of the first part 2a. Furthermore, the second side 212 of the first region 21a of the first part 2a can be substantially aligned with the second side 222 of the second region 22a and the second side 232 of the third region 23a of the first part 2a. Therefore, the thickness T11 of the first region 21a is substantially equal to the thickness T12 of the second region 22a and the thickness T13 of the third region 23a. The thickness T11 of the first region 21a, the thickness T12 of the second region 22a, and the thickness T13 of the third region 23a are the same as the thickness T1 of the first part 2a.

[0033] The second portion 2b may be disposed within the sacrificial material 50 (including the lower sacrificial material 51 and the upper sacrificial material 52) and may extend between the first support layer 11 and the second support layer 12. The second portion 2b may include a first region 21b (e.g., a lower portion), a second region 22b (e.g., an upper portion), and a third region 23b (e.g., an intermediate portion). The first region 21b (e.g., the lower portion) may have a first side surface and a second side surface opposite to the first side surface. The first side surface of the first region 21b (e.g., the lower portion) may contact the first support layer 11 and the lower sacrificial material 51. The second side surface of the first region 21b (e.g., the lower portion) may face the first central hole 62a.

[0034] The second region 22b (e.g., the upper part) may have a first side and a second side opposite to the first side. The first side of the second region 22b (e.g., the upper part) may contact the second support layer 12 and the upper sacrificial material 52. The second side of the second region 22b (e.g., the upper part) may face the first central hole 62a.

[0035] A third region 23b (e.g., the middle portion) may be disposed between a first region 21b (e.g., the lower portion) and a second region 22b (e.g., the upper portion). The third region 23b (e.g., the middle portion) may have one side and a second side opposite to the first side. The first side of the third region 23b (e.g., the middle portion) may contact the third support layer 13, the upper sacrificial material 52, and the lower sacrificial material 51. The second side of the third region 23b (e.g., the middle portion) may face the first central hole 62a.

[0036] The first side of the first region 21b of the second part 2b can be substantially aligned with the first side of the second region 22b and the first side of the third region 23b of the second part 2b. Furthermore, the second side of the first region 21b of the second part 2b can be substantially aligned with the second side of the second region 22b and the second side of the third region 23b of the second part 2b. Therefore, the thickness T21 of the first region 21b is substantially equal to the thickness T22 of the second region 22b and the thickness T23 of the third region 23b. The thickness T21 of the first region 21b, the thickness T22 of the second region 22b, and the thickness T23 of the third region 23b constitute the thickness T2 of the second part 2b. The thickness T2 of the second part 2b can be substantially equal to the thickness T1 of the first part 2a.

[0037] The third part 2c, the fourth part 2d, and the connecting part 2f can be disposed in the second hole 61b. The third part 2c and the fourth part 2d can be disposed on the inner wall of the second hole 61b. As shown in Figure 5B, the third part 2c and the fourth part 2d can be two parts of the same annular shape. That is, from the top view, the third part 2c and the fourth part 2d of the first electrode layer 2 can together define a complete circle.

[0038] Furthermore, the connecting portion 2f can be disposed on the bottom wall of the second hole 61b and can connect the third portion 2c and the fourth portion 2d. The third portion 2c, the fourth portion 2d and the connecting portion 2f can be formed simultaneously and integrally to define the second central hole 62b in the second hole 61b.

[0039] The third portion 2c can be disposed in the sacrificial material 50 (including the lower sacrificial material 51 and the upper sacrificial material 52) and can extend between the first support layer 11 and the second support layer 12. The third portion 2c may include a first region 21c (e.g., a lower portion), a second region 22c (e.g., an upper portion), and a third region 23c (e.g., an intermediate portion). The first region 21c (e.g., the lower portion) may have a first side and a second side opposite to the first side. The first side of the first region 21c (e.g., the lower portion) may contact the first support layer 11 and the lower sacrificial material 51. The second side of the first region 21c (e.g., the lower portion) may face the second central hole 62b.

[0040] The second region 22c (e.g., the upper part) may have a first side and a second side opposite to the first side. The first side of the second region 22c (e.g., the upper part) may contact the second support layer 12 and the upper sacrificial material 52. The second side of the second region 22c (e.g., the upper part) may face the second central hole 62b.

[0041] A third region 23c (e.g., the middle portion) may be disposed between a first region 21c (e.g., the lower portion) and a second region 22c (e.g., the upper portion). The third region 23c (e.g., the middle portion) may have a first side and a second side opposite to the first side. The first side of the third region 23c (e.g., the middle portion) may contact the third support layer 13, the upper sacrificial material 52, and the lower sacrificial material 51. The second side of the third region 23c (e.g., the middle portion) may face the second central hole 62b.

[0042] The first side of the first region 21c of the third part 2c can be substantially aligned with the first side of the second region 22c and the first side of the third region 23c of the third part 2c. Furthermore, the second side of the first region 21c of the third part 2c can be substantially aligned with the second side of the second region 22c and the second side of the third region 23c of the third part 2c. Therefore, the thickness of the first region 21c of the third part 2c is substantially equal to the thickness of the second region 22c and the thickness of the third region 23c of the third part 2c. The thickness of the first region 21c, the thickness of the second region 22c, and the thickness of the third region 23c constitute the thickness of the third part 2c.

[0043] The fourth portion 2d may be disposed within the sacrificial material 50 (including the lower sacrificial material 51 and the upper sacrificial material 52) and may extend between the first support layer 11 and the second support layer 12. The fourth portion 2d may include a first region 21d (e.g., a lower portion), a second region 22d (e.g., an upper portion), and a third region 23d (e.g., an intermediate portion). The first region 21d (e.g., the lower portion) may have a first side surface and a second side surface opposite to the first side surface. The first side surface of the first region 21d (e.g., the lower portion) may contact the first support layer 11 and the lower sacrificial material 51. The second side surface of the first region 21d (e.g., the lower portion) may face the second central hole 62b.

[0044] The second region 22d (e.g., the upper part) may have a first side and a second side opposite to the first side. The first side of the second region 22d (e.g., the upper part) may contact the second support layer 12 and the upper sacrificial material 52. The second side of the second region 22d (e.g., the upper part) may face the second central hole 62b.

[0045] A third region 23d (e.g., the middle portion) may be disposed between a first region 21d (e.g., the lower portion) and a second region 22d (e.g., the upper portion). The third region 23d (e.g., the middle portion) may have a first side and a second side opposite to the first side. The first side of the third region 23d (e.g., the middle portion) may contact the upper sacrificial material 52 and the lower sacrificial material 51. The second side of the third region 23d (e.g., the middle portion) may face the second central hole 62b.

[0046] The first side surface of the first region 21d of the fourth part 2d can be substantially aligned with the first side surface of the second region 22d and the first side surface of the third region 23d of the fourth part 2d. Furthermore, the second side surface of the first region 21d of the fourth part 2d can be substantially aligned with the second side surface of the second region 22d and the second side surface of the third region 23d of the fourth part 2d. Therefore, the thickness of the first region 21d is substantially equal to the thickness of the second region 22d and the third region 23d. The thickness of the first region 21d, the second region 22d, and the third region 23d is the thickness of the fourth part 2d. The thickness of the fourth part 2d can be substantially equal to the thickness of the third part 2c.

[0047] Referring to Figures 1, 6A, 6B, and 6C, in step S904, a plurality of buffer materials 53 may be formed or disposed in the hole 61 (e.g., in the central hole 62, such as the first central hole 62a and the second central hole 62b) to cover the first electrode layer 2. Figure 6B shows a top view of Figure 6A. Alternatively, Figure 6A shows a cross-sectional view along section line II-II in Figure 6B. Figure 6C shows an enlarged view of region "B" in Figure 6A.

[0048] The buffer material 53 may include a dielectric or insulating material, such as a nitride, oxide, oxynitride amorphous silicon, polycrystalline silicon, or other suitable materials. For example, the buffer material 53 may include borosilicate glass (BPSG), which is an oxide doped with boron and phosphorus. The buffer material 53 may be formed by deposition. The material of the buffer material 53 may be the same as or different from the material of the sacrificial material 52.

[0049] In some embodiments, the cushioning material 53 may include a first cushioning material 53a and a second cushioning material 53b. The first cushioning material 53a may be formed or disposed in a first central hole 62a within a first hole 61a. The second cushioning material 53b may be formed or disposed in a second central hole 62b within a second hole 61b. In some embodiments, the cushioning material 53 may not completely fill the central hole 62. For example, the first cushioning material 53a may not completely fill the first central hole 62a. The second cushioning material 53b may not completely fill the second central hole 62b.

[0050] In the first central hole 62a, the first cushioning material 53a can cover and protect the second side 222 of the second region 22a of the first part 2a and the second side of the second region 22b of the second part 2b. In the second central hole 62b, the second cushioning material 53b can cover and protect the second side of the second region 22c of the third part 2c and the second side of the second region 22d of the fourth part 2d.

[0051] Referring to Figures 1, 7A, and 7B, a capping layer 17 may be formed or disposed on the top surface 121 of the second support layer 12 of the substrate material 6 to cover and contact the second support layer 12, the first electrode layer 2, and the plurality of buffer materials 53. Figure 7B shows a top view of Figure 7A. Alternatively, Figure 7A shows a cross-sectional view along section line III-III in Figure 7B.

[0052] The capping layer 17 may have a top surface 171 and a bottom surface 172 opposite to the top surface 171. The bottom surface 172 of the capping layer 17 may face and contact the top surface 121 of the second support layer 12. For example, the capping layer 17 may be a mask and may be formed by deposition. For example, the capping layer 17 may include, for example, nitrides, oxides, oxynitride amorphous silicon, polycrystalline silicon, or another material suitable for the desired patterning operation. For example, the capping layer 17 may include a SiN mask. In some embodiments, the capping layer 17 may be formed by, for example, CVD operations, LPCVD operations, PECVD operations, other feasible operations, or combinations thereof.

[0053] The capping layer 17 can be defined by a photolithography process to create a plurality of openings 175 passing through it. The openings 175 can expose a plurality of cushioning materials 53, a second portion 2b of the first electrode layer 2, a third portion 2c of the first electrode layer 2, and a portion of the second support layer 12. It should be understood that the number of holes 61 overlapping a single opening 175 is not limited. Two, four, five, or more holes 61 can overlap a single opening 175.

[0054] Referring to Figure 8, an etchant 7 can be used to perform the etching process. This etching process can be either dry etching or wet etching. Therefore, the etchant 7 can be an etching gas, plasma, etching solution, or etching liquid. The etchant 7 can be applied to the top surface 171 of the capping layer 17 and also to the openings 175. Therefore, the etchant 7 can simultaneously etch the capping layer 17, the exposed portions of the buffer material 53, the exposed second portion 2b of the first electrode layer 2, the exposed third portion 2c of the first electrode layer 2, and the exposed portions of the second support layer 12.

[0055] Referring to Figures 1, 9A, 9B, and 9C, the etching process can continue in step S905. Figure 9B shows a top view of Figure 9A. Alternatively, Figure 9A shows a cross-sectional view along section IV-IV in Figure 9B. Figure 9C shows an enlarged view of region "C" in Figure 9A.

[0056] During and after the etching process, the capping layer 17 can be removed. In addition, by means of the etching process, a portion of the second support layer 12, a portion of the first electrode layer 2 and a portion of the plurality of buffer materials 53 can be removed to form a plurality of openings 125 through the second support layer 12 and exposing the plurality of buffer materials 53 and sacrificial materials 50 (e.g., upper sacrificial material 52).

[0057] As shown in Figure 9C, the upper sacrificial material 52 may have an inner top surface 521 exposed in the opening 125. The second portion 2b of the first electrode layer 2 may have a top surface 2b1 exposed in the opening 125. The third portion 2c of the first electrode layer 2 may have a top surface 2c1 exposed in the opening 125. The first remaining portion 531a of the first cushioning material 53a may be retained on the second side surface 222 of the second region 22a of the first portion 2a. The second remaining portion 531b of the second cushioning material 53b may be retained on the second side surface of the second region 22d of the fourth portion 2d.

[0058] The opening 125 can be defined by the first remaining portion 531a of the first cushioning material 53a, the second remaining portion 531b of the second cushioning material 53b, the inner top surface 521 of the superimposed material 52, the top surface 2b1 of the second portion 2b of the first electrode layer 2, and the top surface 2c1 of the third portion 2c of the first electrode layer 2. The opening 125 does not expose the second side surface 222 of the second region 22a of the first portion 2a and the second side surface 22d of the second region 22d of the fourth portion 2d. Furthermore, the second region 22a of the first portion 2a can be higher than the top surface 2b1 of the second portion 2b. The second region 22d of the fourth portion 2d can be higher than the top surface 2c1 of the third portion 2c. Therefore, the opening 125 can be blocked by the cushioning materials 53 (e.g., the first cushioning material 53a and the second cushioning material 53b). The opening 125 can taper downwards.

[0059] As shown in Figure 9B, the opening 125 may not be located at an intermediate position between two holes 61 (e.g., the first hole 61a and the second hole 61b). Therefore, during the formation of the opening 125, a portion of the second part 2b and the third part 2c may be removed. As shown in Figure 9B, from a top view, the opening 125 may overlap three holes 61. It should be understood that the number of holes 61 overlapped by an opening 125 is not limited. An opening 125 may overlap two, four, five, or more holes 61.

[0060] During the etching process, the first remaining portion 531a of the first buffer material 53a prevents the second side surface 222 of the second region 22a of the first portion 2a from being etched or damaged by the etchant 7. Therefore, the second side surface 222 of the second region 22a of the first portion 2a is an unetched surface. The first portion 2a can have a uniform thickness T1. That is, the thickness T12 of the second region 22a of the first portion 2a will not decrease after the etching process. After the etching process, the thickness T12 of the second region 22a of the first portion 2a will still be substantially equal to the thickness T11 of the first region 21a and the thickness T1 of the third region 23a.

[0061] Furthermore, the surface condition (e.g., surface roughness) of the second side surface 212 of the first region 21a of the first part 2a can be substantially the same as the surface condition (e.g., surface roughness) of the second side surface 222 of the second region 22a of the first part 2a.

[0062] The top surface 2b1 of the second portion 2b can be etched by the etchant 7. Therefore, the top surface 2b1 of the second portion 2b can be an etched surface. The surface condition (e.g., surface roughness) of the top surface 2b1 of the second portion 2b of the first electrode layer 2 can be different from the surface condition (e.g., surface roughness) of the second side surface 222 of the second region 22a of the first portion 2a. The top surface 2b1 of the second portion 2b can be lower than the bottom surface 122 of the second support layer 12. The second portion 2b may not be in contact with the second support layer 12.

[0063] Similarly, during the etching process, the second remaining portion 531b of the second buffer material 53b prevents the second side surface of the second region 22d of the fourth portion 2d from being etched or damaged by the etchant 7. Therefore, the second side surface of the second region 22d of the fourth portion 2d is an unetched surface. The fourth portion 2d can have a uniform thickness. That is, after the etching process, the thickness of the second region 22d of the fourth portion 2d will not decrease. After the etching process, the thickness of the second region 22d of the fourth portion 2d will still be substantially equal to the thickness of the first region 21d and the third region 23d.

[0064] Furthermore, the surface state (e.g., surface roughness) of the second side of the first region 21d of the fourth part 2d can be substantially the same as the surface state (e.g., surface roughness) of the second side of the second region 22d of the fourth part 2d.

[0065] The top surface 2c1 of the third portion 2c can be etched by the etchant 7. Therefore, the top surface 2c1 of the third portion 2c can be an etched surface. The surface condition (e.g., surface roughness) of the top surface 2c1 of the third portion 2c of the first electrode layer 2 can be different from the surface condition (e.g., surface roughness) of the second side surface of the second region 22d of the fourth portion 2d. The top surface 2c1 of the third portion 2c can be lower than the bottom surface 122 of the second support layer 12. The third portion 2c may not be in contact with the second support layer 12.

[0066] Referring to Figures 1 and 10, in step S906, the buffer material 53 (e.g., the first buffer material 53a and the second buffer material 53b) and the sacrificial material 50 (including the lower sacrificial material 51 and the upper sacrificial material 52) can be removed by an etchant applied through the opening 125. For example, the buffer material 53 and the sacrificial material 50 can be removed simultaneously or concurrently by a wet etching process or a stripping process.

[0067] Meanwhile, the opening 125 in Figure 9A becomes the opening 125' in Figure 10. The opening 125' in Figure 10 can be defined by the second support layer 12 and a portion of the first electrode layer 2. The second side 222 of the second region 22a of the first portion 2a of the first electrode layer 2 faces the opening 125' defined by the second support layer 12 and a portion of the first electrode layer 2. The second side of the second region 22d of the fourth portion 2d of the first electrode layer 2 faces the opening 125'. The second portion 2b and the third portion 2c are disposed below the opening 125'. A portion 134 of the third support layer 13 is disposed below the opening 125' of the second support layer 12.

[0068] Referring to Figures 1 and 11, in step S907, an intermediate dielectric layer 3 may be formed or disposed on the first electrode layer 2. In some embodiments, the intermediate dielectric layer 3 may be conformally fitted to the first electrode layer 2. In some embodiments, the intermediate dielectric layer 3 may be a high-k (dielectric constant) dielectric layer. In some embodiments, the intermediate dielectric layer 3 may also be formed or disposed on the sidewall of the opening 175 and the top surface 171 of the capping layer 17.

[0069] Referring to Figures 1, 12A, and 12B, in step S908, a second electrode layer 4 can be formed or disposed on the intermediate dielectric layer 3. Figure 12B is an enlarged view of region "D" in Figure 12A.

[0070] The second electrode layer 4 may be conformally fitted to the intermediate dielectric layer 3. The second electrode layer 4 may include a conductive metal, such as titanium nitride (TiN), titanium silicon nitride (TiSiN), or copper. The second electrode layer 4 may be formed by deposition. The material of the second electrode layer 4 may be the same as or different from the material of the first electrode layer 2. The second electrode layer 4 may have a substantially uniform thickness. Simultaneously, a conductive structure 1 may be formed. The first electrode layer 2, the intermediate dielectric layer 3, and the second electrode layer 4 may together form a capacitor structure.

[0071] Referring to Figures 12A and 12B, a schematic cross-sectional view of a conductive structure 1 according to an embodiment of the present disclosure is shown. For example, the conductive structure 1 may include a capacitor structure of a memory cell. In some embodiments, the memory cell may include a dynamic random access memory cell (DRAM cell). In some embodiments, the conductive structure 1 may be part of an interconnect structure on a substrate of a semiconductor device. It should be understood that more intermetallic dielectric layers and associated conductive layers and conductive vias may be formed on the conductive structure 1 and / or the capacitor structure.

[0072] Furthermore, the conductive structure 1 and / or the capacitor structure may be part of an integrated circuit (IC) chip, which includes various passive and active microelectronic components, such as resistors, capacitors, inductors, diodes, p-type field-effect transistors (pFETs), n-type field-effect transistors (nFETs), metal-oxide-semiconductor field-effect transistors (MOSFETs), complementary metal-oxide-semiconductor (CMOS) transistors, bicarrier junction transistors (BJTs), laterally diffused MOS (LDMOS) transistors, high-voltage transistors, high-frequency transistors, fin field-effect transistors (FinFETs), other suitable IC components, or combinations thereof.

[0073] The conductive structure 1 may include a first support layer 11, a second support layer 12, a third support layer 13, a capping layer 17, a first electrode layer 2, an intermediate dielectric layer 3, and a second electrode layer 4. The first support layer 11 may also be referred to as the "lower support layer" or "bottom support layer". The second support layer 12 may also be referred to as the "upper support layer" or "top support layer". The third support layer 13 may also be referred to as the "intermediate support layer" or "intermediate support layer".

[0074] The first support layer 11 may have a top surface 111 and a bottom surface 112 opposite to the top surface 111. The bottom surface 112 of the first support layer 11 may face and contact a top surface of a conductive layer. The third support layer 13 may be disposed on the first support layer 11 and spaced apart from the first support layer 11.

[0075] The third support layer 13 may have a top surface 131 and a bottom surface 132 opposite to the top surface 131. The material of the third support layer 13 may be the same as or different from the material of the first support layer 11. The third support layer 13 may be patterned to include a plurality of portions 134.

[0076] The second support layer 12 may be disposed on and spaced apart from the third support layer 13 and the first support layer 11. The third support layer 13 may be disposed between the first support layer 11 and the second support layer 12. The second support layer 12 may have a top surface 121 and a bottom surface 122 opposite to the top surface 121. The material of the second support layer 12 may be the same as or different from the material of the first support layer 11. The thickness of the second support layer 12 may be greater than the thickness of the first support layer 11 and the thickness of the third support layer 13. The second support layer 12 may define a plurality of openings 125'.

[0077] A capping layer 17 may be disposed on the top surface 121 of the second support layer 12. The capping layer 17 may have a top surface 171 and a bottom surface 172 opposite to the top surface 171. The bottom surface 172 of the capping layer 17 may face and contact the top surface 121 of the second support layer 12. The capping layer 17 may define a plurality of openings 175 extending through the capping layer 17. The openings 175 of the capping layer 17 may communicate with openings 125' of the second support layer 12.

[0078] The first electrode layer 2 may include a first portion 2a, a second portion 2b, a third portion 2c, a fourth portion 2d, a connecting portion 2e, and a connecting portion 2f. The first portion 2a, the second portion 2b, the third portion 2c, and the fourth portion 2d may be substantially parallel and spaced apart from each other.

[0079] The first part 2a and the second part 2b can be two parts of the same annular shape. That is, from a top view, the first part 2a and the second part 2b of the first electrode layer 2 can together define a complete circle. Furthermore, the connecting part 2e can be disposed in the first support layer 11 and can connect the first part 2a and the second part 2b. The first part 2a, the second part 2b, and the connecting part 2e can be formed simultaneously.

[0080] The first portion 2a may extend between the first support layer 11 and the second support layer 12. The first portion 2a may include a first region 21a (e.g., a lower portion), a second region 22a (e.g., an upper portion), and a third region 23a (e.g., a middle portion). The first region 21a (e.g., the lower portion) may have a first side 211 and a second side 212 opposite to the first side 211. The first side 211 of the first region 21a (e.g., the lower portion) may contact the first support layer 11.

[0081] The second region 22a (e.g., the upper part) may have a first side 221 and a second side 222 opposite to the first side 221. The first side 221 of the second region 22a (e.g., the upper part) may contact the second support layer 12. The second side 222 of the second region 22a (e.g., the upper part) may face the opening 125' defined by the second support layer 12. The second side 222 of the second region 22a of the first part 2a is an unetched surface.

[0082] Furthermore, the surface condition (e.g., surface roughness) of the second side surface 212 of the first region 21a of the first part 2a can be substantially the same as the surface condition (e.g., surface roughness) of the second side surface 222 of the second region 22a of the first part 2a.

[0083] A third region 23a (e.g., the middle portion) may be disposed between a first region 21a (e.g., the lower portion) and a second region 22a (e.g., the upper portion). The third region 23a (e.g., the middle portion) may have a first side surface 231 and a second side surface 232 opposite to the first side surface 231. The first side surface 231 of the third region 23a (e.g., the middle portion) may contact the third support layer 13.

[0084] The first side surface 211 of the first region 21a of the first part 2a can be substantially aligned with the first side surface 221 of the second region 22a and the first side surface 231 of the third region 23a of the first part 2a. Furthermore, the second side surface 212 of the first region 21a of the first part 2a can be substantially aligned with the second side surface 222 of the second region 22a and the second side surface 232 of the third region 23a of the first part 2a. Therefore, the thickness T11 of the first region 21a is substantially equal to the thickness T12 of the second region 22a and the thickness T13 of the third region 23a. The thickness T11 of the first region 21a, the thickness T12 of the second region 22a, and the thickness T13 of the third region 23a are the thickness T1 of the first part 2a. The first part 2a of the first electrode layer 2 can have a substantially uniform thickness T1.

[0085] The second part 2b may include a first region 21b (e.g., a lower part) and a third region 23b (e.g., a middle part). The first region 21b (e.g., the lower part) may have a first side and a second side opposite to the first side. The first side of the first region 21b (e.g., the lower part) may contact the first support layer 11.

[0086] The third region 23b (e.g., the middle portion) may be disposed on the first region 21b (e.g., the lower portion). The third region 23b (e.g., the middle portion) may have a first side and a second side opposite to the first side. The first side of the third region 23b (e.g., the middle portion) may contact the third support layer 13.

[0087] The first side surface of the first region 21b of the second part 2b can be substantially aligned with the first side surface of the third region 23b of the second part 2b. Furthermore, the second side surface of the first region 21b of the second part 2b can be substantially aligned with the second side surface of the third region 23b of the second part 2b. Therefore, the second part 2b of the first electrode layer 2 can have a substantially uniform thickness T2. The thickness T2 of the second part 2b can be substantially equal to the thickness T1 of the first part 2a. That is, the thickness T2 of the second part 2b of the first electrode layer 2 can be substantially equal to the thickness T12 of the second region 22a of the first part 2a of the first electrode layer 2.

[0088] The top surface 2b1 of the second portion 2b can be etched during the etching process. Therefore, the top surface 2b1 of the second portion 2b can be an etched surface. The surface condition (e.g., surface roughness) of the top surface 2b1 of the second portion 2b of the first electrode layer 2 can be different from the surface condition (e.g., surface roughness) of the second side surface 222 of the second region 22a of the first portion 2a of the first electrode layer 2. The top surface 2b1 of the second portion 2b can be lower than the bottom surface 122 of the second support layer 12. The second portion 2b may not be in contact with the second support layer 12. The second portion 2b can be disposed below the first electrode layer 2.

[0089] The third part 2c and the fourth part 2d can be two parts of the same annular shape. That is, from a top view, the third part 2c and the fourth part 2d of the first electrode layer 2 can together define a complete circle. In addition, the connecting part 2f can be disposed in the first support layer 11 and can connect the third part 2c and the fourth part 2d. The third part 2c, the fourth part 2d and the connecting part 2f can be formed simultaneously.

[0090] The third part 2c may extend between the first support layer 11 and the second support layer 12. The third part 2c may include a first region 21c (e.g., a lower portion) and a third region 23c (e.g., an intermediate portion). The first region 21c (e.g., the lower portion) may have a first side and a second side opposite to the first side. The first side of the first region 21c (e.g., the lower portion) may contact the first support layer 11.

[0091] The third region 23c (e.g., the middle portion) may be disposed between the first regions 21c (e.g., the lower portion). The third region 23c (e.g., the middle portion) may have a first side and a second side opposite to the first side. The first side of the third region 23c (e.g., the middle portion) may contact the third support layer 13.

[0092] The first side surface of the first region 21c of the third part 2c can be substantially aligned with the first side surface of the third region 23c of the third part 2c. Furthermore, the second side surface of the first region 21c of the third part 2c can be substantially aligned with the second side surface of the third region 23c of the third part 2c. Therefore, the third part 2c of the first electrode layer 2 can have a substantially uniform thickness. The thickness of the third part 2c can be substantially equal to the thickness of the fourth part 2d.

[0093] The top surface 2c1 of the third portion 2c can be etched during the etching process. Therefore, the top surface 2c1 of the third portion 2c can be an etched surface. The surface condition (e.g., surface roughness) of the top surface 2c1 of the third portion 2c of the first electrode layer 2 can be different from the surface condition (e.g., surface roughness) of the second side surface of the second region 22d of the fourth portion 2d of the first electrode layer 2. The top surface 2c1 of the third portion 2c can be lower than the bottom surface 122 of the second support layer 12. The third portion 2c may not be in contact with the second support layer 12. The third portion 2c can be disposed below the opening 125'. The top surface 2c1 of the third portion 2c can be substantially aligned with the top surface 2b1 of the second portion 2b. Therefore, the length of the third portion 2c can be substantially equal to the length of the second portion 2b.

[0094] The fourth part 2d may include a first region 21d (e.g., a lower part), a second region 22d (e.g., an upper part), and a third region 23d (e.g., a middle part). The first region 21d (e.g., the lower part) may have a first side and a second side opposite to the first side. The first side of the first region 21d (e.g., the lower part) may contact the first support layer 11.

[0095] The second region 22d (e.g., the upper part) may have a first side and a second side opposite to the first side. The first side of the second region 22d (e.g., the upper part) may contact the second support layer 12.

[0096] A third region 23d (e.g., the middle portion) may be disposed between a first region 21d (e.g., the lower portion) and a second region 22d (e.g., the upper portion). The third region 23d (e.g., the middle portion) may have a first side and a second side opposite to the first side. The first side of the third region 23d (e.g., the middle portion) may be in contact with the intermediate dielectric layer 3.

[0097] The first side surface of the first region 21d of the fourth part 2d can be substantially aligned with the first side surface of the second region 22d and the first side surface of the third region 23d of the fourth part 2d. Furthermore, the second side surface of the first region 21d of the fourth part 2d can be substantially aligned with the second side surface of the second region 22d and the second side surface of the third region 23d of the fourth part 2d. Therefore, the thickness of the first region 21d is substantially equal to the thickness of the second region 22d and the third region 23d. The thickness of the first region 21d, the second region 22d, and the third region 23d is the thickness of the fourth part 2d. The thickness of the fourth part 2d can be substantially equal to the thickness of the third part 2c.

[0098] The intermediate dielectric layer 3 may be disposed on the first electrode layer 2. In some embodiments, the intermediate dielectric layer 3 may be conformally oriented to the first electrode layer 2. In some embodiments, the intermediate dielectric layer 3 may be a high-k dielectric layer. In some embodiments, the intermediate dielectric layer 3 may be disposed on the sidewall of the opening 175 and the top surface 171 of the capping layer 17.

[0099] The second electrode layer 4 may be formed or disposed on the intermediate dielectric layer 3. The second electrode layer 4 may be conformally oriented with the intermediate dielectric layer 3. The material of the second electrode layer 4 may be the same as or different from the material of the first electrode layer 2. The second electrode layer 4 may have a substantially uniform thickness. The first electrode layer 2, the intermediate dielectric layer 3, and the second electrode layer 4 may together form a capacitor structure.

[0100] One aspect of this disclosure provides a conductive structure. The conductive structure includes a first support layer, a second support layer, a first electrode layer, an intermediate dielectric layer, and a second electrode layer. The second support layer is disposed on and spaced apart from the first support layer. The first electrode layer includes a first portion. The first portion includes a first region for contacting the first support layer and a second region for contacting the second support layer. The thickness of the first region and the thickness of the second region are substantially equal. The intermediate dielectric layer is disposed on the first electrode layer. The second electrode layer is disposed on the intermediate dielectric layer.

[0101] Another aspect of this disclosure provides a conductive structure. The conductive structure includes a first support layer, a second support layer, a first electrode layer, an intermediate dielectric layer, and a second electrode layer. The second support layer is disposed on and spaced apart from the first support layer. The first electrode layer includes a first portion and a second portion, with the second portion substantially parallel to the first portion. The first portion and the second portion contact the first support layer. The first portion includes an upper portion that is higher than the second portion. The upper portion of the first portion of the first electrode layer has a first side surface and a second side surface, wherein the first side surface contacts the second support layer, and the second side surface is opposite to the first side surface. The second side surface of the upper portion of the first portion is an unetched surface. A top surface of the second portion is an etched surface. The intermediate dielectric layer is disposed on the first electrode layer. The second electrode layer is disposed on the intermediate dielectric layer.

[0102] Another aspect of this disclosure provides a method for fabricating a conductive structure. The method includes providing a substrate material comprising a first support layer, a second support layer, and a sacrificial material disposed between the first and second support layers. The method further includes forming a plurality of holes penetrating the second support layer and extending to the first support layer. The method also includes forming a first electrode layer within the plurality of holes. Furthermore, the method includes forming a plurality of buffer materials within the plurality of holes to cover the first electrode layer. The method further includes removing a portion of the second support layer, a portion of the first electrode layer, and a portion of the plurality of buffer materials to form a plurality of openings extending through the second support layer and exposing the plurality of buffer materials and the sacrificial material. The method also includes removing the plurality of buffer materials and the sacrificial material through the plurality of openings. The method further includes forming an intermediate dielectric layer on the first electrode layer. The method also includes forming a second electrode layer on the intermediate dielectric layer.

[0103] While this disclosure and its advantages have been detailed, it should be understood that various changes, substitutions, and alternatives can be made without departing from the spirit and scope of this disclosure as defined in the claims. For example, many of the processes described above can be implemented using different methods, and many of the processes described above can be replaced by other processes, or combinations thereof.

[0104] Furthermore, the scope of this application is not limited to the specific embodiments of the processes, machinery, manufacturing, material composition, means, methods, and steps described in the specification. Those skilled in the art will understand from the disclosure herein that existing or future processes, machinery, manufacturing, material composition, means, methods, or steps that have the same function or achieve substantially the same results as the corresponding embodiments described herein can be used based on this disclosure. Therefore, such processes, machinery, manufacturing, material composition, means, methods, or steps are included within the scope of the patent application of this application.

[0105] 1: Conductive structure 2: First electrode layer 2a: Part 1 2b: Part Two 2b1: Top surface 2c: Part Three 2c1: Top surface 2d: Part Four 2e: Connection part 2f: Connection part 3: Intermediate dielectric layer 4: Second electrode layer 6: Substrate material 7: Etching agent 11: First Support Layer 12: Second support layer 13: Third support layer 17: Cap layer 21a: First Region 21b: Area 1 21c: Region 1 21d: Region 1 22a: Second Region 22b: Second Region 22c: Second Region 22d: Second Region 23a: Third Region 23b: Third Region 23c: Third Region 23d: Third Region 50: Sacrificial Materials 51: Lowering sacrificial materials 52: Sacrificial materials 53: Cushioning material 53a: First cushioning material 53b: Second cushioning material 61: Kong 61a: First hole 61b: Second hole 62: Central Hole 62a: First central hole 62b: Second central hole 111: Top surface 112: Bottom surface 121: Top surface 122: Bottom surface 124: Part 125: Opening 125': Opening 131: Top surface 132: Bottom surface 134: Part 171: Top surface 172: Bottom 175: Opening 211: First side view 212: Second side view 221: First Side View 222: Second side view 231: First Side View 232: Second side view 521: Inner top surface 531a: First Remaining Part 531b: Second Remainder 900: Preparation Method S901: Steps S902: Steps S903: Steps S904: Steps S905: Steps S906: Steps S907: Steps S908: Steps A: Area B: Area C: Area D: Area II: Section II-II: Section III-III: Sectioning IV-IV: Section T1: Thickness T2: Thickness T11: Thickness T12: Thickness T13: Thickness T21: Thickness T22: Thickness T23: Thickness

Claims

1. A conductive structure, comprising: First support layer; A second support layer is disposed on the first support layer and spaced apart from the first support layer; A first electrode layer includes a first portion, wherein the first portion includes a first region and a second region, and the first region contacts the first support layer and the second region contacts the second support layer, wherein a thickness of the first region and a thickness of the second region are substantially equal; an intermediate dielectric layer is disposed on the first electrode layer; and a second electrode layer is disposed on the intermediate dielectric layer, wherein in a cross-sectional view, the second region of the first portion of the first electrode layer has a first side surface to contact the second support layer, and has a second side surface opposite to the first side surface, wherein the second side surface of the second region is an unetched surface, wherein in the cross-sectional view, the second side surface of the second region of the first portion faces an opening, wherein the opening is defined by the second support layer.

2. The conductive structure as described in claim 1, wherein, in a cross-sectional view, the first portion of the first electrode layer has a substantially uniform thickness.

3. The conductive structure as claimed in claim 1, wherein the first region of the first portion of the first electrode layer has a first side surface for contacting the first support layer, and has a second side surface relative to the first side surface, wherein the second side surface of the first region of the first portion of the first electrode layer is substantially aligned with the second side surface of the second region of the first portion of the first electrode layer.

4. The conductive structure as described in claim 3, wherein a surface state of a second side surface of a first region of a first portion of the first electrode layer is substantially the same as a surface state of a second side surface of a second region of a first portion of the first electrode layer.

5. The conductive structure as claimed in claim 4, wherein the surface roughness of a second side surface of a first region of a first portion of the first electrode layer is substantially equal to the surface roughness of a second side surface of a second region of a first portion of the first electrode layer.

6. The conductive structure as claimed in claim 1, wherein the first electrode layer further includes a second portion that is substantially parallel to and spaced apart from the first portion, wherein a top surface of the second portion is an etched surface.

7. The conductive structure as claimed in claim 6, wherein a surface state of the top surface of the second portion of the first electrode layer is different from a surface state of the second side surface of the second region of the first portion of the first electrode layer.

8. The conductive structure as claimed in claim 6, wherein the surface roughness of the top surface of the second portion of the first electrode layer is different from the surface roughness of the second side surface of the second region of the first portion of the first electrode layer.

9. The conductive structure as claimed in claim 6, wherein a thickness of the second portion of the first electrode layer is substantially equal to a thickness of the second region of the first portion of the first electrode layer.

10. The conductive structure as described in claim 6, wherein the top surface of the second portion is lower than a bottom surface of the second support layer.

11. The conductive structure as described in claim 6, wherein the second portion does not contact the second support layer.

12. The conductive structure as described in claim 11, wherein the second portion is disposed below an opening, wherein the opening is defined by the second support layer.

13. The conductive structure as described in claim 6, wherein, from a top view perspective, the first portion of the first electrode layer and the second portion of the first electrode layer together define a complete circle.

14. The conductive structure as claimed in claim 1 further includes a third support layer disposed between the first support layer and the second support layer, wherein the first portion of the first electrode layer further includes a third region for contacting the third support layer, wherein a thickness of the third region is substantially equal to a thickness of the second region.

15. The conductive structure as claimed in claim 14, wherein in a cross-sectional view, the second region of the first portion of the first electrode layer has a first side surface to contact the second support layer and a second side surface relative to the first side surface of the second region, the third region of the first portion of the first electrode layer has a first side surface to contact the third support layer and a second side surface relative to the first side surface, wherein the second side surface of the second region of the first portion is substantially aligned with the second side surface of the third region of the first portion.

16. The conductive structure as claimed in claim 14, wherein a portion of the third support layer is disposed below an opening in the second support layer.

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