Method for forming substrate with conductive pillar

Abstract

This invention discloses a method for forming a substrate with conductive pillars. The method includes perforating a substrate component to form a plurality of through holes having a first aperture on the substrate component; enlarging the plurality of through holes, the enlarging process including a first stage enlarging and a second stage enlarging, wherein the first stage enlarging is to give the plurality of through holes a second aperture larger than the first aperture, and the second stage enlarging is to form an inclined surface on a portion of the plurality of through holes; filling the plurality of conductive pillars into the plurality of through holes; filling the plurality of through holes with an colloid to fill the gap between the plurality of conductive pillars and the inner walls of the plurality of through holes, to obtain a substrate semi-finished product; and grinding the substrate semi-finished product to obtain a substrate with conductive pillars.

Description

Technical Field

[0001] The present invention relates to a method for forming a substrate, and more particularly to a method for forming a substrate having conductive pillars. Prior Technology

[0002] With the advancement of technology, semiconductor manufacturing processes have become increasingly precise. As the dimensions of substrates become more and more refined, the efficiency of existing conductive pillar filling methods is relatively low, and they are gradually failing to meet the demands of current advanced semiconductor packaging processes for the transfer of a large number of conductive pillars.

[0003] Therefore, how to improve the filling efficiency of conductive posts by refining the methods and procedures to overcome the above-mentioned defects has become one of the important issues that this project aims to address. Summary of the Invention

[0004] The technical problem to be solved by the present invention is to provide a method for forming a substrate with conductive pillars, which addresses the shortcomings of the prior art. The method includes: performing a perforation process on a substrate processing part to form a plurality of through holes with a first aperture on the substrate processing part; performing a hole enlargement process on the plurality of through holes, the hole enlargement process including a first stage hole enlargement and a second stage hole enlargement, wherein the first stage hole enlargement is to give the plurality of through holes a second aperture, the second aperture being larger than the first aperture, and the second stage hole enlargement is to form an inclined surface on a portion of the plurality of through holes; filling the plurality of conductive pillars into the plurality of through holes; filling the plurality of through holes with an colloid to fill the gap between the plurality of conductive pillars and the inner walls of the plurality of through holes, thereby obtaining a substrate semi-finished product; and grinding the substrate semi-finished product to obtain the substrate with conductive pillars.

[0005] In one embodiment of the present invention, the perforation is performed by drilling the substrate using a first processing laser, wherein the wavelength of the first processing laser is 300 to 2000 nm, the pulse width of the first processing laser is 50 to 500 fs, and the pulse energy of the first processing laser is 10 nJ to 1000 µJ; wherein the via enlargement process is performed by enlarging a plurality of the vias using a second processing laser or etching, wherein the wavelength of the second processing laser is 300 to 2000 nm, the pulse width of the second processing laser is 50 to 500 fs, and the pulse energy of the second processing laser is 10 nJ to 1000 µJ.

[0006] In one embodiment of the present invention, the surface roughness of the inner wall of the plurality of through holes is from 10 nm to 50,000 nm, the first hole diameter is from 1 µm to 10 µm, and the second hole diameter is from 10 µm to 100 µm.

[0007] In one embodiment of the present invention, the method further includes monitoring the substrate processing part in real time using a monitoring module; wherein the monitoring module includes an optical module and an image analysis module, the optical module is electrically connected to the image analysis module, and the optical module includes a light emitting unit and a light receiving unit.

[0008] In one embodiment of the present invention, the light emitting unit emits a monitoring laser beam toward the substrate processing part, the wavelength range of the monitoring laser beam being 300~2000 nm, and the pulse width range of the monitoring laser beam being 50 fs to 50 The light receiving unit includes a first wavefront sensor and a second wavefront sensor, and the image analysis module includes a waveform generator. The first wavefront sensor is located on a first side of the substrate processing part, and receives reflected light from the monitoring laser beam reflected by the substrate processing part to generate a reflected light signal. The second wavefront sensor is located on a second side of the substrate processing part. The light emitting unit emits the monitoring laser beam toward the substrate processing part, and the second wavefront sensor receives transmitted light from the monitoring laser beam passing through the substrate processing part to generate a transmitted light signal. The waveform generator is electrically connected to the first and second wavefront sensors to receive the reflected light signal and generate a first detection waveform, and to receive the transmitted light signal and generate a second detection waveform.

[0009] In one embodiment of the present invention, the light emitting unit emits a monitoring laser beam toward the substrate processing part, the wavelength range of the monitoring laser beam being 300~2000 nm, and the pulse width range of the monitoring laser beam being 50 fs to 50 The light receiving unit includes a first photoelastic sensor and a second photoelastic sensor, and the image analysis module includes an image device; wherein, the first photoelastic sensor is located on a first side of the substrate processing part, and the first photoelastic sensor receives a reflected light from the monitoring laser beam reflected by the substrate processing part to generate a reflected light signal; wherein, the second photoelastic sensor is located on a second side of the substrate processing part; the light emitting unit emits a second laser beam toward the substrate processing part, and the second photoelastic sensor receives a transmitted light from the second laser beam passing through the substrate processing part to generate a transmitted light signal; wherein, the image device is electrically connected to the first photoelastic sensor and the second photoelastic sensor to receive the reflected light signal and generate a first stress distribution feature map, and to receive the transmitted light signal and generate a second stress distribution feature map.

[0010] In one embodiment of the present invention, the light emitting unit emits a monitoring laser beam toward the substrate processing part, the wavelength range of the monitoring laser beam being 300~2000 nm, and the pulse width range of the monitoring laser beam being 50 fs to 50 The light receiving unit includes a first laser vibrometer and a second laser vibrometer, and the image analysis module includes a waveform generator; wherein, the first laser vibrometer is located on a first side of the substrate processing part, and the first laser vibrometer receives a reflected light from the monitoring laser beam reflected by the substrate processing part to generate a reflected ultrasound wave; wherein, the second laser vibrometer is located on a second side of the substrate processing part; the light emitting unit emits the monitoring laser beam toward the substrate processing part, and the second laser vibrometer receives a transmitted light from the monitoring laser beam passing through the substrate processing part to generate a transmitted ultrasound wave; wherein, the waveform generator is electrically connected to the first laser vibrometer and the second laser vibrometer to receive the reflected ultrasound wave and generate a first waveform diagram, and to receive the transmitted ultrasound wave and generate a second waveform diagram.

[0011] In one embodiment of the present invention, the light emitting unit emits a monitoring laser beam toward the substrate processing part, the light receiving part includes a first hyperspectral sensor and a second hyperspectral sensor, and the image analysis module includes a hyperspectral generator; wherein, the first hyperspectral sensor is located on a first side of the substrate processing part, and the first hyperspectral sensor receives reflected light from the monitoring laser beam reflected by the substrate processing part to generate a reflected light signal; wherein, the second hyperspectral sensor is located on a second side of the substrate processing part; the light emitting unit emits the monitoring laser beam toward the substrate processing part, and the second hyperspectral sensor receives transmitted light from the monitoring laser beam passing through the substrate processing part to generate a transmitted light signal; wherein, the hyperspectral generator is electrically connected to the first hyperspectral sensor and the second hyperspectral sensor to receive the reflected light signal and generate a first detection spectrum, and to receive the transmitted light signal and generate a second detection spectrum; wherein, the first hyperspectral sensor and the second hyperspectral sensor receive a spectral range of 300 nm to 2500 nm. nm, where the spectrum is a continuous spectrum.

[0012] In one embodiment of the present invention, the monitoring module further includes an imaging device that captures multiple images of a shadow portion of the substrate processing part that is not subjected to a monitoring laser beam; and the image analysis module receives the multiple images and determines and calculates the defects and probabilities of the shadow portion based on the multiple images; or compensates the multiple images and determines and calculates the defects and probabilities of the shadow portion.

[0013] In one embodiment of the present invention, the step of grinding the substrate semi-finished product further includes using a cleaning module to remove impurities on the substrate semi-finished product, wherein the cleaning module includes a gas source and a gas nozzle, and the gas nozzle is connected to the gas source.

[0014] In one embodiment of the present invention, the method further includes using an artificial intelligence module to learn and pre-train parameters of the perforation process and the enlargement process, and to automatically select a suitable monitoring module according to the characteristics of the substrate processing part, and to optimize the setting of multiple monitoring parameters of the monitoring module; wherein, the artificial intelligence module includes: a database unit having relevant data on the type, shape, size, thickness, and density of the substrate processing part, wherein the database unit is connected to a cloud platform via the Internet to update the relevant data; and a learning and training unit. The learning and training unit is connected to the database unit, and learns and pre-trains using a deep learning algorithm based on relevant data in the database unit; a parameter optimization setting unit is connected to the database unit to optimize the via processing and via enlargement processing based on relevant data of the type, shape, size, thickness, and density of the substrate processing part; and a monitoring module setting unit is connected to the database unit to select a suitable monitoring module based on relevant data of the type, shape, size, thickness, and density of the substrate processing part.

[0015] One of the beneficial effects of the present invention is that the method for forming a substrate with conductive pillars provided by the present invention can improve the filling efficiency of the conductive pillars by performing a perforation process on a substrate processing part to form a plurality of through holes having a first aperture on the substrate processing part and performing a hole enlargement process on the plurality of through holes, the hole enlargement process including a first stage hole enlargement and a second stage hole enlargement, wherein the first stage hole enlargement is to make the plurality of through holes have a second aperture, the second aperture being larger than the first aperture, and the second stage hole enlargement is to make a portion of the plurality of through holes form an inclined surface.

[0016] To further understand the features and technical content of the present invention, please refer to the following detailed description and drawings of the present invention. However, the drawings provided are for reference and illustration only and are not intended to limit the present invention. Simple Explanation of the Diagram

[0017] Figure 1 is a flowchart of the method for forming a substrate with conductive pillars according to the present invention.

[0018] Figure 2 is a cross-sectional schematic diagram of step S1 of the method for forming a substrate with conductive pillars according to the present invention.

[0019] Figure 3 is a cross-sectional schematic diagram of the first stage of the method for forming a substrate with conductive pillars according to the present invention.

[0020] Figure 4 is a cross-sectional schematic diagram of the second stage of the method for forming a substrate with conductive pillars according to the present invention.

[0021] Figure 5 is a schematic diagram of step S3 of the method for forming a substrate with conductive pillars.

[0022] Figure 6 is a cross-sectional schematic diagram of step S4 of the method for forming a substrate with conductive pillars according to the present invention.

[0023] Figure 7 is a cross-sectional schematic diagram of step S5 of the method for forming a substrate with conductive pillars according to the present invention.

[0024] Figure 8 is a schematic diagram of the architecture of the monitoring module used in the method for forming a substrate with conductive pillars according to the present invention.

[0025] Figure 9 is a functional block diagram of the artificial intelligence module used in the method of forming a substrate with conductive pillars according to the present invention.

[0026] Figure 10 is a schematic diagram of the metal column transfer method of the present invention using a cleaning module. Implementation

[0027] The following specific embodiments illustrate the implementation of the "method for forming a substrate with conductive pillars" disclosed in this invention. Those skilled in the art can understand the advantages and effects of this invention from the content disclosed in this specification. This invention can be implemented or applied through other different specific embodiments, and various details in this specification can also be modified and changed based on different viewpoints and applications without departing from the concept of this invention. Furthermore, the accompanying drawings of this invention are for simple illustrative purposes only and are not depictions of actual dimensions; this is stated in advance. The following embodiments will further describe the relevant technical content of this invention in detail, but the disclosed content is not intended to limit the scope of protection of this invention.

[0028] It should be understood that while terms such as "first," "second," and "third" may be used in this document to describe various components or signals, these components or signals should not be limited by these terms. These terms are primarily used to distinguish one component from another, or one signal from another. Furthermore, the term "or" as used herein may, depending on the context, include any combination of one or more of the associated listed items.

[0029] Referring to Figures 1 to 7, the flowcharts, cross-sectional views of step S1, the first stage of hole enlargement, the second stage of hole enlargement, the third stage of hole enlargement, the fourth stage of hole enlargement, and the fifth stage of hole enlargement are respectively shown. The present invention provides a method for forming a substrate with conductive pillars, comprising at least the following steps: Step S1: A substrate processing part 10 is perforated to form a plurality of through holes 11 with a first aperture D1 on the substrate processing part 10; Step S2: The plurality of through holes 11 are enlarged; Step S3: A plurality of conductive pillars 20 are filled into the plurality of through holes 11; Step S4: A colloid 40 is filled into the plurality of through holes 11 to fill the gap between the plurality of conductive pillars 20 and the inner walls of the plurality of through holes 11, obtaining a substrate semi-finished product S1; and Step S5: The substrate semi-finished product S1 is ground to obtain a substrate S2 with conductive pillars.

[0030] In step S1, as shown in FIG2, a first processing laser L1 can be emitted by the first laser unit 1 to drill holes in the substrate processing part 10. The wavelength of the first processing laser is 300 to 2000 nm, the pulse width of the first processing laser is 50 to 500 fs, and the pulse energy of the first processing laser is 10 nJ to 1000 µJ. Specifically, the through-hole processing can be performed by using the first processing laser L1 to form a plurality of through holes 11 with a first aperture D1 on the substrate processing part 10, and the first aperture D1 is between 1 µm and 10 µm (for example, any positive integer between 1 µm and 10 µm).

[0031] In step S2, as shown in Figure 3, the plurality of through holes 11 can be enlarged. The enlargement process can include a first-stage enlargement and a second-stage enlargement. Specifically, the first-stage enlargement can be to increase the overall diameter of the plurality of through holes 11, that is, to make the plurality of through holes 11 have a second diameter D2 that is larger than the first diameter D1, and the second diameter D2 is between 10 µm and 100 µm (for example, any positive integer between 10 µm and 100 µm).

[0032] Furthermore, after the first stage of hole enlargement, a second stage of hole enlargement can be performed, which means that a portion, rather than all, of the plurality of through holes 11 can form inclined surfaces 12. Specifically, as shown in Figure 4, the second stage of hole enlargement can make the plurality of through holes 11 have a funnel-shaped structure when viewed in cross-section, so that the width of the upper half of the through hole 11 is greater than the width of the lower half of the through hole 11, which facilitates the subsequent filling of the conductive post 20.

[0033] In one embodiment, a second processing laser L2 emitted by a second laser unit 2 can be used to enlarge a plurality of vias 11. The wavelength of the second processing laser is 300 to 2000 nm, the pulse width of the second processing laser is 50 to 500 fs, and the pulse energy of the second processing laser is 10 nJ to 1000 µJ. In another embodiment, etching can also be used to enlarge the plurality of vias 11, such that the surface roughness of the inner wall of the via 11 is between 10 nm and 50000 nm (e.g., any positive integer between 10 nm and 50000 nm). For example, etching can be wet chemical etching, in which the substrate processing part 10 is immersed in a chemical solution to remove a portion of the substrate processing part 10. Further, the chemical solution can be an inorganic acid or alkali solution such as hydrofluoric acid (HF) or potassium hydroxide (KOH).

[0034] In step S3, as shown in Figure 5, a plurality of conductive posts 20 can be filled into a plurality of through holes 11. Specifically, the substrate processing part 10, which has undergone drilling and hole enlargement processing, can be placed on the vibrating plate R, and a plurality of conductive posts 20 can be placed on the substrate processing part 10. The vibrating plate R is started, and the vibrating plate R can repeatedly vibrate in the horizontal or vertical direction, so that the plurality of conductive posts 20 can move on the substrate processing part 10 and fill into the plurality of through holes 11.

[0035] Furthermore, the bottom of the substrate processing part 10 may have an adhesive layer 30, so that the conductive post 20 falling into the through hole 11 can be fixed in the substrate processing part 10. For example, the material of the adhesive layer 30 may be epoxy resin, benzocyclobutene resin (BCB), silicone, perfluorocyclobutane (PFCB), or polyimide.

[0036] Subsequently, the adhesive filling step S4 can be performed. As shown in Figure 6, adhesive 40 can be filled into the gaps between the inner walls of the plurality of conductive pillars 20 and the plurality of through holes 11 to fix the plurality of conductive pillars 20 into the plurality of through holes 11, thereby obtaining the substrate semi-finished product S1. For example, the adhesive filling step can be performed by spin coating, and then the adhesive 40 is dried to obtain spin-on glass (SOG).

[0037] After the glue filling is completed, the adhesive layer 30 can be removed, and step S5 is performed to grind the substrate semi-finished product S1, as shown in Figure 7. After grinding, the substrate semi-finished product S1 can be obtained as a substrate S2 with conductive pillars on the upper and lower surfaces.

[0038] In one embodiment of the present invention, step S3 may further include using a monitoring module 50 to monitor the filling status of the conductive post 20 in real time, so as to control the vibration direction, frequency and amplitude of the vibrating disk R, and further improve the accuracy and efficiency of the conductive post 20 filling the through hole 11. Specifically, as shown in FIG8, the monitoring module 50 may include a light emitting unit 51, a control device 52, an imaging device 53, a first light receiving unit 54 and a second light receiving unit 55. The light emitting unit 51, the imaging device 53, the first light receiving unit 54 and the second light receiving unit 55 are all electrically connected to the control device 52. The light emitting unit 51 is located on the first side of the substrate processing part 10 and emits a monitoring laser beam Lm toward the substrate processing part 10. The first light receiving unit 54 is located on the first side of the substrate processing part 10 and is used to receive the reflected light La of the monitoring laser beam Lm reflected by the substrate processing part 10 to generate a reflected light signal. The second light receiving unit 55 is located on the second side of the substrate processing part 10 and is used to receive the transmitted light Lb of the monitoring laser beam Lm passing through the substrate processing part 10 to generate a transmitted light signal. The imaging device 53 is electrically connected to the first light receiving unit 54 and the second light receiving unit 55 to receive the reflected light La and the transmitted light Lb and generate a detection result.

[0039] The monitoring module 50 may also include a moving device (not shown). For example, a first light receiving unit 54 is connected to a first moving device so that the first light receiving unit 54 can move in three-dimensional space; a second light receiving unit 55 is connected to a second moving device so that the second light receiving unit 55 can move in three-dimensional space; and a light emitting unit 51 is connected to a laser moving device so that the light emitting unit 51 can move in three-dimensional space. This allows adjustment of the light emission position of the light emitting unit 51 and the light receiving positions of the first light receiving unit 54 and the second light receiving unit 55.

[0040] In one embodiment, the monitoring module 50 is a hyperspectral monitoring module, which includes an optical module and an image analysis module (not shown). The optical module is electrically connected to the image analysis module and includes a light emitting unit 51 and a first light receiving unit 54 and a second light receiving unit 55 as light receiving units. The first light receiving unit 54 and the second light receiving unit 55 can be hyperspectral sensors, such as a hyperspectral camera. The first light receiving unit 54 and the second light receiving unit 55 receive a continuous spectrum with a spectral range of 300 nm to 2500 nm. According to one embodiment, during the filling of the conductive pillar 20, the light emitting unit 51 emits a monitoring laser beam Lm onto the surface of the substrate processing part 10. The monitoring laser beam Lm is reflected from the surface of the substrate processing part 10 to generate a reflected light La signal, and the monitoring laser beam Lm passes through the surface of the substrate processing part 10 to generate a transmitted light Lb signal. The first light receiving unit 54 receives the reflected light La signal, and the second light receiving unit 55 receives the transmitted light Lb signal. The corresponding spectrum is provided to the image analysis module, so that the image analysis module analyzes the spectrum to obtain optical results and transmits the optical results to the processing module (not shown) to control and adjust the vibration frequency and amplitude of the vibrating disk R according to the optical results.

[0041] In one embodiment, the monitoring module 50 can be a wavefront monitoring module, which includes a laser device as a light emitting unit 51, a first light receiving unit 54 and a second light receiving unit 55 as light receiving units, and a waveform generator (not shown). The first light receiving unit 54 and the second light receiving unit 55 can be wavefront sensors and are electrically connected to the waveform generator. The light emitting unit 51 is disposed above the substrate processing part 10. According to one embodiment, during the filling of the conductive pillar 20, the light emitting unit 51 emits a laser beam as a monitoring laser beam Lm onto the surface of the substrate processing part 10. The monitoring laser beam Lm is reflected from the surface of the substrate processing part 10 to generate a reflected light La signal, and the monitoring laser beam Lm passes through the surface of the substrate processing part 10 to generate a transmitted light Lb signal. The first light receiving unit 54 receives the reflected light La signal, and the second light receiving unit 55 receives the transmitted light Lb signal. The received reflected light La signal and transmitted light Lb signal are provided to a waveform generator (not shown) to analyze the reflected light La signal and transmitted light Lb signal to obtain a waveform detection result, and the waveform detection result is transmitted to the processing module. The processing module can control and adjust the vibration frequency and amplitude of the vibrating disk R according to the waveform detection result.

[0042] In one embodiment, the monitoring module 50 can be a photoelastic monitoring module, which includes a laser device as a light emitting unit 51, a first light receiving unit 54 and a second light receiving unit 55 as light receiving units, and an imaging device (not shown). The first light receiving unit 54 and the second light receiving unit 55 can be photoelastic sensors and are electrically connected to the imaging device. The light emitting unit 51 is disposed above the substrate processing part 10. According to one embodiment, during the filling of the conductive pillar 20, the light emitting unit 51 emits a laser beam as a monitoring laser beam Lm onto the surface of the substrate processing part 10. The monitoring laser beam Lm is reflected from the surface of the substrate processing part 10 to generate a reflected light La signal, and the monitoring laser beam Lm passes through the surface of the substrate processing part 10 to generate a transmitted light Lb signal. The first light receiving unit 54 receives the reflected light La signal, and the second light receiving unit 55 receives the transmitted light Lb signal. The received reflected light La signal and transmitted light Lb signal are provided to an imaging device (not shown) to analyze the reflected light La signal and transmitted light Lb signal to obtain stress distribution characteristic results, and the stress distribution characteristic results are transmitted to the processing module. The processing module can control and adjust the vibration frequency and amplitude of the vibrating disk R according to the stress distribution characteristic results.

[0043] In one embodiment, the monitoring module 50 can be a femtosecond ultrasonic monitoring module, comprising a laser device as the light emitting unit 51, a first light receiving unit 54 and a second light receiving unit 55 as the light receiving section, and a waveform generator (not shown). The light emitting unit 51 is disposed above the substrate processing part 10. According to one embodiment, during the filling of the conductive pillar 20, the light emitting unit 51 emits a laser beam as a monitoring laser beam Lm onto the surface of the substrate processing part 10. The monitoring laser beam Lm is reflected from the surface of the substrate processing part 10 to generate a reflected light La signal, and the monitoring laser beam Lm passes through the surface of the substrate processing part 10 to generate a transmitted light Lb signal. The first light receiving unit 54 receives the reflected light La signal, and the second light receiving unit 55 receives the transmitted light Lb signal. The received reflected light La signal and transmitted light Lb signal are provided to the waveform generator to analyze the reflected light La signal and transmitted light Lb signal to obtain a waveform diagram result, which is then transmitted to the processing module. The processing module can control and adjust the vibration frequency and amplitude of the vibrating disk R based on the waveform results.

[0044] In one embodiment, the monitoring module 50 can be a CCD monitoring module, which includes a CCD camera (not shown). According to one embodiment, during the filling of the conductive pillars 20, the CCD camera can capture images of the surface of the substrate processing part 10 in real time and transmit the images to the processing module. The processing module can analyze the micro-hole filling status based on the images and control and adjust the vibration frequency and amplitude of the vibrating disk R in real time. In addition, the CCD camera can also act as an imaging device to capture multiple images of the shadowed areas of the detection area that are not receiving the monitoring laser beam Lm. The image analysis module receives the multiple images and judges and calculates the defects and probabilities of the shadowed areas based on the multiple images. The analysis module may also compensate for the multiple images and judge and calculate the defects and probabilities of the shadowed areas.

[0045] For example, the imaging device can be any device capable of capturing images (such as a camera), capturing the shadowed areas in the detection region of the object under test, especially the areas where the monitoring laser beam Lm cannot be received. An analysis module, such as a computer, can use deep learning to determine the potential defects in the shadowed areas and the probability of those defects occurring. The analysis module may further determine and calculate the defects and probabilities in the shadowed areas by compensating the image. In other words, when the monitoring module 50 of this invention cannot determine the filling status of the conductive post 20 using the monitoring laser beam Lm, the imaging device can be used to assist in determining the filling status of the conductive post 20, thereby improving the accuracy of defect detection.

[0046] In some embodiments, the method for forming a substrate with conductive pillars according to the present invention may further include using an artificial intelligence module 60 to learn and pre-train parameters for through-hole processing and via enlargement processing, automatically selecting a suitable monitoring module 50 according to the characteristics of the substrate processing part 10, and optimizing the settings of multiple monitoring parameters of the monitoring module 50. As shown in FIG9, the artificial intelligence module 60 may include at least a database unit 61, a learning and training unit 62, a parameter optimization setting unit 63, and a monitoring module setting unit 64. The database unit 61 is used to store relevant information about the substrate processing part 10, such as the type, shape, size, thickness, and density of the substrate processing part 10. In addition, the database unit 61 can be connected to the Internet via a wireless network unit (not shown), and can be further connected to a cloud platform to update relevant data or provide deep learning algorithms for use by the learning and training unit 62. The learning and training unit 62 is connected to the database unit 61 and learns and pre-trains using deep learning algorithms based on the relevant data in the database unit 61. The parameter optimization setting unit 63 is connected to the database unit 61 and optimizes the processing parameters based on relevant data on the type, shape, size, thickness, and density of the substrate processing part 10. The monitoring module setting unit 64 is connected to the database unit 61 and selects a suitable monitoring module 50 based on relevant data on the type, shape, size, thickness, and density of the substrate processing part 10.

[0047] The method for forming a substrate with conductive pillars according to the present invention may further include using a cleaning module 70 to remove impurities from the substrate semi-finished product S1 in the polishing step S5. The cleaning module may be disposed above or adjacent to the substrate semi-finished product S1, and the present invention does not particularly limit the arrangement of the cleaning module 70.

[0048] Specifically, referring to Figure 10, the cleaning module 70 may include at least a gas source 71 for storing cleaning material 73 and a gas nozzle 72 for supplying cleaning material 73 to the substrate processing part 10 or the substrate processing part 10. For example, the gas source 71 contains liquid carbon dioxide and is supplied to the gas nozzle 72 at a pressure between approximately 700 psi and approximately 900 psi (e.g., any positive integer between 700 psi and 900 psi), causing the liquid carbon dioxide to undergo isenthalpic expansion into a stream of solid carbon dioxide particles as it leaves the gas nozzle 72, thereby carrying away impurities from the substrate processing part 10 or the substrate processing part 10. In one embodiment, the distance between the gas nozzle 72 and the substrate processing part 10 may be between approximately 0.5 inches and approximately 2 inches (e.g., any positive integer between 0.5 inches and 2 inches). In one embodiment, the gas nozzle 72 and the substrate processing part 10 may have tilt angles of about 15 degrees and 45 degrees (e.g., any positive integer between 15 and 45 inches) to avoid the momentum of the carbon dioxide particle flow being too high and damaging the substrate processing part 10.

[0049] [Beneficial Effects of the Examples]

[0050] One of the beneficial effects of the present invention is that the method for forming a substrate with conductive pillars provided by the present invention can improve the filling efficiency of the conductive pillars by performing a perforation process on a substrate processing part to form a plurality of through holes having a first aperture on the substrate processing part and performing a hole enlargement process on the plurality of through holes, the hole enlargement process including a first stage hole enlargement and a second stage hole enlargement, wherein the first stage hole enlargement is to make the plurality of through holes have a second aperture, the second aperture being larger than the first aperture, and the second stage hole enlargement is to make a portion of the plurality of through holes form an inclined surface.

[0051] Furthermore, due to the cohesive force between liquid molecules and their adhesive force on solid surfaces, liquid adheres to the flow channel openings, making it difficult for the adhesive to flow into the vias during the filling step. The method for forming a substrate with conductive pillars provided by this invention can perform a second stage of via enlargement after the first stage, resulting in a surface roughness of the inner wall of the via between 10 nm and 50,000 nm. This disrupts the smoothness of the liquid surface in the via, allowing the adhesive to flow into the vias more easily during filling.

[0052] The content disclosed above is only a preferred and feasible embodiment of the present invention, and is not intended to limit the scope of the patent application of the present invention. Therefore, all equivalent technical changes made using the contents of the present invention specification and drawings are included in the scope of the patent application of the present invention.

[0053] 1: First Laser Unit 10: Substrate processing parts 11: Through hole 12: Inclined surface 2: Second Laser Unit 20: Conductive column 30: Adhesive layer 40: Colloid 50: Monitoring Module 51: Light emitting unit 52: Control device 53: Imaging Device 54: First optical receiving unit 55: Second optical receiving unit 60: Artificial Intelligence Module 61: Database Unit 62: Learning and Training Unit 63: Parameter Optimization Setting Unit 64: Monitoring Module Setting Unit 70: Cleaning Module 71: Gas Source 72: Gas Nozzle 73: Cleaning substances D1: First aperture D2: Second aperture L1: First Processing Laser L2: Second processing laser La: Reflected light Lb: Transmitting light Lm: Laser beam for monitoring R: Vibrating disc S1: Substrate semi-finished product S1~S5: Steps S2: Substrate with conductive pillars

Claims

1. A method for forming a substrate having conductive pillars, comprising: A substrate is subjected to a perforation process to form a plurality of through holes having a first aperture on the substrate; the plurality of through holes are subjected to a hole enlargement process, the hole enlargement process including a first stage hole enlargement and a second stage hole enlargement, wherein the first stage hole enlargement is to give the plurality of through holes a second aperture, the second aperture being larger than the first aperture, and the second stage hole enlargement is to form a portion, but not all, of the plurality of through holes into an inclined surface; a plurality of conductive pillars are filled into the plurality of through holes, and the inclined surface provided by the through holes is used to improve the filling efficiency of the conductive pillars; an colloid is filled into the plurality of through holes to fill the gap between the plurality of conductive pillars and the inner walls of the plurality of through holes, to obtain a substrate semi-finished product; and the substrate semi-finished product is ground to obtain the substrate having conductive pillars.

2. The method as described in request item 1, wherein, The perforation is performed by drilling the substrate using a first processing laser, wherein the wavelength of the first processing laser is 300 to 2000 nm, the pulse width of the first processing laser is 50 to 500 fs, and the pulse energy of the first processing laser is 10 nJ to 1000 µJ; wherein the via enlargement process is performed by enlarging a plurality of the vias using a second processing laser or etching, wherein the wavelength of the second processing laser is 300 to 2000 nm, the pulse width of the second processing laser is 50 to 500 fs, and the pulse energy of the second processing laser is 10 nJ to 1000 µJ; wherein the surface roughness of the inner wall of the plurality of vias is 10 nm to 50000 nm; wherein the first aperture is 1 µm to 10 µm, and the second aperture is 10 µm to 100 µm.

3. The method as described in claim 1, further comprising using a monitoring module to monitor the substrate processing part in real time; wherein, The monitoring module includes an optical module and an image analysis module. The optical module is electrically connected to the image analysis module. The optical module includes a light emitting unit and a light receiving unit.

4. The method as described in request item 3, wherein, The light emitting unit emits a monitoring laser beam toward the substrate processing part. The wavelength range of the monitoring laser beam is 300~2000 nm, and the pulse width range is 50 fs to 50 ns. The light receiving part includes a first wavefront sensor and a second wavefront sensor. The image analysis module includes a waveform generator. The first wavefront sensor is located on a first side of the substrate processing part and receives reflected light from the monitoring laser beam reflected by the substrate processing part to generate a reflected light signal. The second wavefront sensor is located on a second side of the substrate processing part. The light emitting unit emits the monitoring laser beam toward the substrate processing part, and the second wavefront sensor receives transmitted light from the monitoring laser beam passing through the substrate processing part to generate a transmitted light signal. The waveform generator is electrically connected to the first optical wavefront sensor and the second optical wavefront sensor to receive the reflected light signal and generate a first detection waveform, and to receive the transmitted light signal and generate a second detection waveform.

5. The method as described in request item 3, wherein, The light emitting unit emits a monitoring laser beam toward the substrate processing part. The wavelength range of the monitoring laser beam is 300~2000 nm, and the pulse width range is 50 fs to 50 ns. The light receiving part includes a first photoelastic sensor and a second photoelastic sensor. The image analysis module includes an image device. The first photoelastic sensor is located on a first side of the substrate processing part and receives reflected light from the monitoring laser beam reflected by the substrate processing part to generate a reflected light signal. The second photoelastic sensor is located on a second side of the substrate processing part. The light emitting unit emits the monitoring laser beam toward the substrate processing part, and the second photoelastic sensor receives transmitted light from the monitoring laser beam passing through the substrate processing part to generate a transmitted light signal. The imaging device is electrically connected to the first photoelastic sensor and the second photoelastic sensor to receive the reflected light signal and generate a first stress distribution feature map, and to receive the transmitted light signal and generate a second stress distribution feature map.

6. The method as described in request item 3, wherein, The light emitting unit emits a monitoring laser beam toward the substrate processing part. The wavelength range of the monitoring laser beam is 300~2000 nm, and the pulse width range is 50 fs to 50 ns. The light receiving part includes a first laser vibrometer and a second laser vibrometer. The image analysis module includes a waveform generator. The first laser vibrometer is located on a first side of the substrate processing part and receives reflected light from the monitoring laser beam reflected by the substrate processing part to generate a reflected ultrasound wave. The second laser vibrometer is located on a second side of the substrate processing part. The light emitting unit emits the monitoring laser beam toward the substrate processing part, and the second laser vibrometer receives transmitted light from the monitoring laser beam passing through the substrate processing part to generate a transmitted ultrasound wave. The waveform generator is electrically connected to the first laser vibrometer and the second laser vibrometer to receive the reflected ultrasound and generate a first waveform, and to receive the penetrating ultrasound and generate a second waveform.

7. The method as described in request item 3, wherein, The light emitting unit emits a monitoring laser beam toward the substrate processing part. The light receiving part includes a first hyperspectral sensor and a second hyperspectral sensor. The image analysis module includes a hyperspectral generator. The first hyperspectral sensor is located on a first side of the substrate processing part and receives reflected light from the monitoring laser beam reflected by the substrate processing part to generate a reflected light signal. The second hyperspectral sensor is located on a second side of the substrate processing part. The light emitting unit emits the monitoring laser beam toward the substrate processing part, and the second hyperspectral sensor receives transmitted light from the monitoring laser beam passing through the substrate processing part to generate a transmitted light signal. The hyperspectral generator is electrically connected to the first and second hyperspectral sensors to receive the reflected light signal and generate a first detection spectrum, and to receive the transmitted light signal and generate a second detection spectrum. The first and second hyperspectral sensors receive a spectral range of 300 nm to 2500 nm, wherein the spectrum is a continuous spectrum.

8. The method as described in request item 3, wherein, The monitoring module further includes an imaging device that captures multiple images of a shadowed area of ​​the substrate processing part that is not exposed to a monitoring laser beam; and the image analysis module receives the multiple images and determines and calculates the defects and probabilities of the shadowed area based on the multiple images; or compensates the multiple images and determines and calculates the defects and probabilities of the shadowed area.

9. The method as described in request item 1, wherein, The step of grinding the substrate semi-finished product further includes using a cleaning module to remove impurities from the substrate semi-finished product, wherein the cleaning module includes a gas source and a gas nozzle, and the gas nozzle is connected to the gas source.

10. The method as described in claim 1, further comprising using an artificial intelligence module to learn and pre-train parameters of the perforation process and the enlargement process, and to automatically select a suitable monitoring module based on the characteristics of the substrate component, and to optimize the settings of multiple monitoring parameters of the monitoring module; wherein, The artificial intelligence module includes: a database unit containing relevant data on the type, shape, size, thickness, and density of the substrate processing component, wherein the database unit is connected to a cloud platform via the Internet to update the relevant data; a learning and training unit connected to the database unit, wherein the learning and training unit uses a deep learning algorithm to learn and pre-train based on the relevant data in the database unit; a parameter optimization setting unit connected to the database unit to optimize the via processing and via enlargement processing based on the relevant data on the type, shape, size, thickness, and density of the substrate processing component; and a monitoring module setting unit connected to the database unit to select a suitable monitoring module based on the relevant data on the type, shape, size, thickness, and density of the substrate processing component.

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