Capacitor module

Abstract

A capacitor module includes a first die and a second die. Each of the first die and the second die includes a capacitor device and a circuit structure electrically connected to the capacitor device. The circuit structure includes a pad and a first signal line. The first signal line includes a first pad connection portion and a first signal transmission portion. The first pad connection portion is located below the pad and is electrically connected to the pad. The first signal transmission portion is electrically connected to the capacitor device. The first signal line of the first die further includes a first fuse connecting the first pad connection portion and the first signal transmission portion. A breakage of the first signal line of the second die electrically separates the first pad connection portion of the second die from the first signal transmission portion.

Description

Technical Field

[0001] This invention relates to a capacitor module. Prior Technology

[0002] Silicon capacitors provide excellent energy storage and voltage regulation, and can effectively suppress noise in high-frequency circuits, ensuring system stability and efficient operation. Therefore, they are often used in communication equipment, medical equipment, and automotive electronic systems.

[0003] However, when silicon capacitors fail, it leads to decreased circuit filtering performance, increased noise, and consequently, affects signal quality. Furthermore, damaged silicon capacitors can cause power instability, resulting in voltage fluctuations, overloads, or even system failure. In applications with high reliability requirements, such as medical devices or automotive electronics, silicon capacitor failure can also affect the safety and long-term operation of the equipment. Therefore, the yield rate of silicon capacitors is crucial to ensuring the overall performance and reliability of electronic components. Summary of the Invention

[0004] This invention provides a capacitor module with the advantages of high yield and low leakage current.

[0005] At least one embodiment of the present invention provides a capacitor module including a first die and a second die. Each of the first die and the second die includes a capacitor device and a circuit structure electrically connected to the capacitor device. The circuit structure includes a pad and a first signal line. The first signal line includes a first pad connection portion and a first signal transmission portion. The first pad connection portion is located below the pad and is electrically connected to the pad. The first signal transmission portion is electrically connected to the capacitor device. The first signal line of the first die further includes a first fuse connecting the first pad connection portion and the first signal transmission portion. A breakage of the first signal line of the second die causes the first pad connection portion of the second die to be electrically separated from the first signal transmission portion. Simple Explanation of the Diagram

[0006] Figure 1 is a perspective view of a wafer according to an embodiment of the present invention. Figure 2A is a top view schematic diagram of a capacitor module according to an embodiment of the present invention. Figure 2B is a cross-sectional schematic diagram along line A-A' of Figure 2A. Figure 3 is a top view schematic diagram of a grain according to an embodiment of the present invention. Figure 4A is a partial top view of a grain according to an embodiment of the present invention. Figure 4B is a cross-sectional view along line A-A' of Figure 4A. Figure 5A is a top view schematic diagram of a capacitor module according to an embodiment of the present invention. Figure 5B is a top view schematic diagram of the second die in Figure 5A. Figure 6A is a partial top view of a grain according to an embodiment of the present invention. Figure 6B is a cross-sectional view along line A-A' of Figure 6A. Figure 7 is a partial top view schematic diagram of a grain according to another embodiment of the present invention. Figure 8A is a partial top view of a grain according to yet another embodiment of the present invention. Figure 8B is a cross-sectional view along line A-A' of Figure 8A. Figure 8C is a cross-sectional view along line B-B' of Figure 8A. Figure 9A is a partial top view of a grain according to yet another embodiment of the present invention. Figure 9B is a cross-sectional view along line A-A' of Figure 9A. Figure 9C is a cross-sectional view along line B-B' of Figure 9A. Figure 10 is a partial cross-sectional schematic diagram of a grain according to another embodiment of the present invention. Figure 11 is a flowchart of a maintenance method for a capacitor module according to an embodiment of the present invention. Implementation

[0007] Figure 1 is a perspective view of a wafer 1 according to an embodiment of the present invention. The wafer 1 includes a plurality of dies 100, and each die 100 has a dicing channel CL between them.

[0008] Figure 2A is a top view schematic diagram of a capacitor module according to an embodiment of the present invention. Figure 2B is a cross-sectional schematic diagram along line A-A' of Figure 2A. Referring to Figures 2A and 2B, wafer 1 is cut to obtain a capacitor module 10 comprising a plurality of dies 100. The number of dies 100 in the capacitor module 10 can be determined according to actual needs. For example, each die 100 includes a component region 102 and a peripheral region 104 surrounding the component region 102. The component region 102 includes a capacitor device (not shown in Figure 2A). For example, the capacitor device includes a plurality of capacitors connected in parallel, wherein the capacitors are, for example, silicon capacitors, metal-insulator-metal capacitors, or other arbitrary types of capacitors. The number of dies 100 in the capacitor module 10 is determined according to the required capacitance value. The more capacitor devices required, the more dies 100 are in the capacitor module 10.

[0009] In one embodiment, the die 100 includes a substrate 110 and a circuit structure 120 located on the substrate 110. The substrate 110 is, for example, a semiconductor substrate. The circuit structure 120 is, for example, an interconnect layer or a redistribution layer. In one embodiment, a capacitor device is located in the substrate 110 and / or the circuit structure 120.

[0010] The cutting path CL is located in the peripheral area 104. In one embodiment, the thickness t1 of the capacitor module 10 at the cutting path CL is less than the thickness t2 of the capacitor module 10 at the component area 102.

[0011] Figure 3 is a top view schematic diagram of a die 100 according to an embodiment of the present invention. Specifically, Figure 3 is a top view schematic diagram of the circuit structure 120 of each die 100 in Figure 2A. Referring to Figure 3, the circuit structure 120 of the die 100 includes a plurality of pads 1221A and a plurality of pads 1221B. Pads 1221A and 1221B are electrically connected to opposite electrodes of a capacitor, respectively. For example, pad 1221A is configured to receive a power supply voltage from a power supply, while pad 1221B is configured to receive a ground voltage. In one embodiment, pads 1221A and 1221B may have similar structures.

[0012] Figure 4A is a partial top view of a grain according to an embodiment of the present invention. For example, Figure 4A is a partial top view of grain 100 in Figure 3, and the structure of pad 1221A and / or pad 1221B in Figure 3 can be as shown in pad 1221 in Figure 4A. Figure 4B is a cross-sectional view along line A-A' in Figure 4A.

[0013] Referring to Figures 4A and 4B, the capacitor device C is located in or on the substrate 110. The circuit structure 120 is located on the substrate 110 and electrically connected to the capacitor device C. The circuit structure 120 includes a pad 1221, an electrode layer 1222, vias 1231 and 1232, signal lines 124 and 125, transmission lines 126a and 126b, via 127, an insulating structure 121, and a protective layer 129.

[0014] A pad 1221 is disposed in the bonding region PA. An electrode layer 1222 surrounds the pad 1221, and the electrode layer 1222 and the pad 1221 are separate from each other. In one embodiment, the pad 1221 and the electrode layer 1222 belong to the same conductive layer (e.g., conductive layer M1). For example, the pad 1221 and the electrode layer 1222 are formed simultaneously. In one embodiment, the shape of the pad 1221 includes an octagon, hexagon, rectangle, triangle, circle, or other geometric shapes.

[0015] Signal line 124 includes a pad connection portion 1241, a signal transmission portion 1243, and a fuse 1242 connecting the pad connection portion 1241 and the signal transmission portion 1243. In one embodiment, the pad connection portion 1241 is located below the pad 1221, and the signal transmission portion 1243 is located below the electrode layer 1222. The pad connection portion 1241 is electrically connected to the pad 1221. For example, the pad 1221 is electrically connected to the pad connection portion 1241 through a through-hole 1231 located below it. The signal transmission portion 1243 is optionally electrically connected to the electrode layer 1222. For example, the electrode layer 1222 is electrically connected to the signal transmission portion 1243 through a through-hole 1232 located below it.

[0016] A fuse 1242 overlaps the gap between the electrode layer 1222 and the pad 1221. In the event of a die failure (e.g., leakage), the fuse 1242 can be cut by laser or etching processes, electrically isolating the pad connection portion 1241 and the signal transmission portion 1243 from each other, thereby reducing the negative impact of the faulty die on the capacitor module. In one embodiment, the fuse corresponding to each pad 1221A (see FIG. 3) and / or each pad 1221B (see FIG. 3) of the faulty die is cut, electrically isolating the faulty die from other dies in the capacitor module. Although this reduces the total capacitance of the capacitor module, it also avoids the negative impact of the faulty die on other normally functioning dies (e.g., reducing leakage problems). Therefore, the yield of the capacitor module can be improved.

[0017] The width of each fuse 1242 is smaller than the width of the contact pad 1241 and the signal transmission section 1243, allowing the fuse 1242 to be cut more easily. However, due to the narrower width of the fuse 1242, the overall resistance of the signal line 124 increases. Compared to using only one fuse 1242 to connect the contact pad 1241 and the signal transmission section 1243, using multiple fuses 1242 between the contact pad 1241 and the signal transmission section 1243 can reduce the resistance of the signal line 124. The number of fuses 1242 between the contact pad 1241 and the signal transmission section 1243 can be adjusted according to actual needs.

[0018] In this embodiment, multiple signal lines 124 belong to the same conductive layer (e.g., conductive layer M2). For example, multiple signal lines 124 are formed simultaneously. Conductive layer M2 is electrically connected to conductive layer M1 through vias 1231 and 1232.

[0019] Transmission lines 126a and 126b are located below signal line 124, with transmission line 126a below signal transmission section 1243 and transmission line 126b below pad connection section 1241. Transmission lines 126a and 126b are located between signal line 124 and capacitor device C. Signal transmission section 1243 is electrically connected to transmission line 126a through through hole 125 and to capacitor device C through transmission line 126a and a corresponding through hole 127 below it. On the other hand, transmission line 126b is electrically connected to capacitor device C through corresponding through hole 127; however, transmission line 126b is not electrically connected to pad 1221 shown in Figures 4A and 4B. Specifically, the lower surface of pad connection section 1241 does not have any through holes directly connected to it, preventing pad connection section 1241 from being electrically connected to transmission line 126b directly below it through through holes. In this embodiment, the insulating structure 121 covers the signal line 124, and the entire lower surface of the pad connection portion 1241 contacts the insulating structure 121. In one embodiment, the transmission line 126b may be electrically connected to other pads not shown in Figures 4A and 4B.

[0020] In one embodiment, the extension directions of transmission lines 126a and 126b are not parallel to the extension direction of signal line 124. For example, the extension directions of transmission lines 126a and 126b are perpendicular to the extension direction of signal line 124.

[0021] In this embodiment, multiple transmission lines 126a and 126b belong to the same conductive layer (e.g., conductive layer M3). For example, multiple transmission lines 126a and 126b are formed simultaneously. Conductive layer M3 is electrically connected to conductive layer M2 through via 125.

[0022] A protective layer 129 is located on the insulating structure 121 and has openings 129A and 129B. Opening 129A exposes a pad 1221, for example, an pad 1221 in the junction region PA. Opening 129B overlaps with a plurality of fuses 1242. In one embodiment, the position of the fuses 1242 can be determined by the position of opening 129B.

[0023] Each die 100 in the capacitor module 10 shown in Figure 2A is tested. For example, probes are used to contact pads 1221A (see Figure 3) and 1221B (see Figure 3) and leakage current is detected. The total leakage current of the capacitor module 10 is calculated. Based on the total leakage current, the number of fuses 1242 in the dies 100 that need to be tripped is calculated. For example, after testing each die 100 in the capacitor module 10, some dies 100 are found to be faulty, as shown in Figure 5A. The faulty die is labeled as die 100' and marked with a cross symbol in the figure. In one embodiment, a normally functioning die 100 may be referred to as the first die, and the faulty die 100' may be referred to as the second die. A cleavage CL is included between the grain 100 and the grain 100', and the substrate of the grain 100 (substrate 110 as shown in Figure 2B or Figure 4B) is connected to the substrate of the grain 100' (substrate 110 as shown in Figure 2B or Figure 4B).

[0024] Each die 100' includes multiple signal lines 124 in its circuit structure. The signal lines 124 of the die 100 include multiple fuses 1242 connecting the pad connection portion 1241 and the signal transmission portion 1243, as shown in Figures 4A and 4B. However, the breakage of the signal lines 124 of the die 100' causes the pad connection portion 1241 of the die 100' to be electrically separated from the signal transmission portion 1243. For example, the fuses 1242 can be broken by a laser or etching process, as shown in Figures 6A and 6B. Specifically, a portion of the insulating structure 121 and the fuses 1242 below the opening 129B are removed by a laser or etching process, causing the fuses 1242 below the opening 129B to break. In one embodiment, the opening 129B of the die 100 overlaps with the fuses 1242, as shown in Figure 4B. However, the opening 129B of the die 100' overlaps with the location where the signal line 124 of the die 100' breaks, which is the location where the fuse 1242 breaks.

[0025] By cutting off the signal line 124 of the die 100', the capacitor device C of the die 100' is electrically disconnected from the pad 1221 to which it was originally connected. In one embodiment, each pad 1221A of the die 100' is cut off as shown in Figures 6A and 6B, while the pad 1221B remains uncut from the fuse 1242, as shown in Figure 5B. In other embodiments, each pad 1221B of the die 100' can be cut off as shown in Figures 6A and 6B, while the pad 1221A remains uncut from the fuse. In other embodiments, both each pad 1221A and each pad 1221B of the die 100' are cut off as shown in Figures 6A and 6B.

[0026] In one embodiment, after the fuse 1242 is cut off, a residue 1242' is left on the pad connection portion 1241 and / or the signal transmission portion 1243.

[0027] Figure 7 is a partial top view of a die according to another embodiment of the present invention. For example, Figure 7 is a partial top view of the die 100 of Figure 3, and the structure of pads 1221A and / or 1221B in Figure 3 can be as shown in pad 1221 of Figure 7. It should be noted that the embodiment of Figure 7 uses the component reference numerals and some contents of the embodiments of Figures 4A and 4B, wherein the same or similar reference numerals are used to represent the same or similar components, and the description of the same technical content is omitted, and will not be repeated here.

[0028] Referring to Figure 7, in this embodiment, reducing the width of the fuse 1242 will increase the resistance of the signal line 124. To reduce the resistance between the pad 1221 and the capacitor device, increasing the length of the pad 1221 allows one pad 1221 to be electrically connected to more signal lines 124.

[0029] In one embodiment, cutting off the fuse 1242 separates the pad 1221 from the capacitor device C. For example, if a faulty die (or second die) is detected, cutting off the fuse 1242 in the faulty die prevents the faulty die from negatively affecting other dies.

[0030] Figure 8A is a partial top view of a grain according to another embodiment of the present invention. Figure 8B is a cross-sectional view along line A-A' of Figure 8A. Figure 8C is a cross-sectional view along line B-B' of Figure 8A. For example, Figure 8A is a partial top view of the grain 100 of Figure 3, and the structure of pad 1221A and / or pad 1221B in Figure 3 can be as shown in pad 1221 of Figure 8A. It should be noted that the embodiments of Figures 8A to 8C use the same element references and some contents as the embodiments of Figures 4A and 4B, wherein the same or similar references are used to represent the same or similar elements, and the description of the same technical content is omitted, and will not be repeated here.

[0031] Referring to Figures 8A to 8C, in this embodiment, the pad 1221 has, for example, an H-shape. Specifically, the pad 1221 includes a main body 1221a and four branch portions 1221b. The main body 1221a extends along direction D1. The branch portions 1221b are parallel to direction D2. Two of the four branch portions 1221b extend outward from one side of the main body 1221a, while the other two extend outward from the other side of the main body 1221a. An electrode layer 1222 surrounds the pad 1221.

[0032] Referring to Figures 8A and 8B, the signal line 124a includes a pad connection portion 1241a, a signal transmission portion 1243a, and a fuse 1242a connecting the pad connection portion 1241a and the signal transmission portion 1243a. The pad connection portion 1241a is located below the main body portion 1221a, and the main body portion 1221a is electrically connected to the pad connection portion 1241a through a through hole 1231. In this embodiment, a portion of the transmission line 126a extends through the pad connection portion 1241a of the signal line 124a below the main body portion 1221a, but there is no through hole directly below the pad connection portion 1241a connecting to the bottom surface of the signal line 124a.

[0033] Referring to Figures 8A and 8C, signal line 124b includes a pad connection portion 1241b, a signal transmission portion 1243b, a signal transmission portion 1243c, a fuse 1242b, and a fuse 1242c. Signal line 124b is, for example, parallel to signal line 124a. In this embodiment, signal lines 124a and 124b belong to the same conductive layer (i.e., conductive layer M2). That is, signal lines 124a and 124b are formed simultaneously.

[0034] Each signal line 124b has multiple pad connections 1241b located below two of the four branches 1221b. The pad connections 1241b are electrically connected to the branches 1221b of the pad 1221 through the through-hole 1231.

[0035] Signal transmission units 1243b and 1243c are located below electrode layer 1222 and are electrically connected to electrode layer 1222 through via 1232. Signal transmission units 1243b and 1243c are electrically connected to capacitor device C. For example, signal transmission units 1243b and 1243c are electrically connected to capacitor device C through via 125, transmission line 126a, and via 127. By providing signal transmission units 1243b and 1243c, the number of connection points between conductive layer M1 and conductive layer M2 can be increased (e.g., by increasing the number of vias 1232), thereby reducing the resistance value.

[0036] Multiple fuses 1242b are connected to the connector 1241b and the signal transmission unit 1243b. Multiple fuses 1242c are connected to the connector 1241b and the signal transmission unit 1243c. The number of fuses 1242b and 1242c can be adjusted according to actual needs.

[0037] In one embodiment, each die in the tested capacitor module is then subjected to a test, followed by the disconnection of fuses 1242a, 1242b, and 1242c in the faulty die (or second die), as shown in Figures 9A, 9B, and 9C. For example, this is achieved using a laser or etching process. Therefore, in the repaired capacitor module, in the normal die (or first die), pads 1221 (e.g., pads 1221A or 1221B in Figure 5B) are electrically connected to the capacitor device C. In the faulty die, pads 1221 (e.g., pads 1221A or 1221B in Figure 5B) are electrically disconnected from the capacitor device C. The breakage of the signal line 124a in the faulty die causes the pad connection 1241a to be electrically disconnected from the signal transmission section 1243a, as shown in Figures 9A and 9B. The signal line 124b of the faulty die breaks, causing the pad connection 1241b to be electrically separated from the signal transmission section 1243b and the signal transmission section 1243c, as shown in Figures 9A and 9C.

[0038] In one embodiment, after fuses 1242a, 1242b, and 1242c are cut off, residues 1242a', 1242b', and 1242c' are left.

[0039] Figure 10 is a partial cross-sectional schematic diagram of a die according to another embodiment of the present invention. It should be noted that the embodiment of Figure 10 uses the same component reference numerals and some content as the embodiments of Figures 4A and 4B, with the same or similar reference numerals used to represent the same or similar components, and descriptions of the same technical content omitted. For explanations of the omitted parts, please refer to the foregoing embodiments, which will not be repeated here. In the die of Figure 10, part of the capacitor device C is located directly below the pad 1221, but the capacitor device C must be electrically connected to the pad 1221 via the fuse 1242. In other words, simply cutting the fuse 1242 will electrically disconnect the pad 1221 from the capacitor device C.

[0040] Figure 11 is a flowchart of a maintenance method for a capacitor module according to an embodiment of the present invention. Referring to Figure 10, in step S1, each die in the capacitor module is tested. For example, each die 100 in the capacitor module 10 shown in Figure 3 is tested. After testing, some dies 100 are found to be faulty dies 100', as shown in Figure 5A. Faulty dies 100' may have leakage problems, for example.

[0041] In step S2, the total leakage current of the capacitor module is calculated. In one embodiment, if the total leakage current exceeds the product standard, step S3 is performed. If the total leakage current does not exceed the product standard, the repair is completed.

[0042] In step S3, based on the total leakage current, the number of grains that need to be cut off is calculated.

[0043] Next, in step S4, the fuses corresponding to the pads in the die are cut off. Specifically, the pads and corresponding fuses in the faulty die are cut off using a laser or etching process, as shown in Figures 6A, 6B, 9A, and 9B. In one embodiment, in addition to cutting off the fuses corresponding to the pads in the faulty die, the fuses corresponding to the pads in the non-faulty die can also be cut off as needed to adjust the total capacitance of the capacitor module.

[0044] 1: Wafer 10: Capacitor Module 100, 100': Grain size 102: Component Area 104: Surrounding Area 110: Base 120: Circuit Structure 121: Insulation Structure 1221, 1221A, 1221B: Sealing pads 1221a: Main body 1221b: Branch Office 1222: Electrode layer 1231, 1232, 125, 127: Through holes 124, 124a, 124b: Signal lines 1241, 1241a, 1241b: Connecting parts of the joint pad 1242, 1242a, 1242b, 1242c: Fuses 1242', 1242a', 1242b', 1242c': Residues 1243, 1243a, 1243b, 1243c: Signal Transmission Unit 126a, 126b: Transmission lines 129: Protective layer 129A, 129B: Opening C: Capacitor device CL: Cutting track D1, D2: Direction M1, M2, M3: Conductive layers PA: Junction area S1, S2, S3, S4: Steps t1, t2: thickness

Claims

1. A capacitor module, comprising: A first die and a second die, each comprising: a capacitor device; and a circuit structure electrically connected to the capacitor device, wherein the circuit structure comprises: a pad; and a first signal line, wherein the first signal line comprises: a first pad connection portion located below the pad and electrically connected to the pad; a first signal transmission portion electrically connected to the capacitor device, wherein the first signal line of the first die further comprises a plurality of first fuses connecting the first pad connection portion and the first signal transmission portion, and the first signal line of the second die breaks such that the first pad connection portion of the second die is electrically separated from the first signal transmission portion; an insulating structure covering the first signal line, wherein the entire lower surface of the first pad connection portion contacts the insulating structure; and a protective layer located above the insulating structure and having a first opening and a second opening, wherein the first opening exposes the pad, and wherein the second opening of the first die overlaps the plurality of first fuses of the first die, and the second opening of the second die overlaps at the location where the first signal transmission portion of the second die breaks.

2. The capacitor module as claimed in claim 1, wherein the pads of the first die and the second die respectively comprise: A main body portion extending along a first direction, wherein the first pad connecting portion is located below the main body portion and is electrically connected to the main body portion; And four branches, wherein two of the four branches extend outward from one side of the main body, and the other two of the four branches extend outward from the other side of the main body.

3. The capacitor module as claimed in claim 2, wherein the circuit structure of each of the first die and the second die further includes: Electrode layer, surrounding the pad; The second signal line is parallel to the first signal line and includes: a plurality of second pad connection portions located below two of the four branches and electrically connected to the pads; A plurality of second signal transmission units are electrically connected to the capacitor device; and a third signal transmission unit is located below the electrode layer and electrically connected to the electrode layer, wherein the second signal line of the first die further includes a plurality of second fuses connecting the plurality of second pad connections and the plurality of second signal transmission units, and a plurality of third fuses connecting the plurality of second pad connections and the third signal transmission unit, and the breakage of the second signal line of the second die causes the plurality of second pad connections of the second die to be electrically separated from the plurality of second signal transmission units and the third signal transmission unit.

4. The capacitor module as claimed in claim 1, wherein the width of each of the plurality of first fuses of the first die is smaller than the width of the first signal transmission unit.

5. The capacitor module as claimed in claim 1, wherein the circuit structures of the first die and the second die further include: A transmission line is located between the first signal line and the capacitor device, wherein the extension direction of the transmission line is not parallel to the extension direction of the first signal line.

6. The capacitor module as claimed in claim 1, wherein the second die is a faulty die as tested.

7. The capacitor module of claim 1, wherein a cleavage is included between the first die and the second die, and the substrate of the first die is connected to the substrate of the second die.

8. The capacitor module as claimed in claim 1, wherein the capacitor device of the first die comprises a plurality of capacitors connected in parallel.

Images