Semiconductor process chamber

Abstract

A semiconductor process chamber includes a cavity, a shield, a retaining ring, a retaining ring assembly, and a support assembly. The shield is fitted inside the cavity and grounded through the cavity. Both the retaining ring and the retaining ring assembly are fitted inside the shield, with the retaining ring assembly supported by the shield. The retaining ring covers the retaining ring assembly and is supported by the shield. The support assembly supports the wafer. When the support assembly rises to the process position, it lifts the retaining ring assembly, and the inner edge of the retaining ring assembly presses against the periphery of the wafer. The retaining ring assembly is insulated from both the retaining ring and the shield. The retaining ring of the semiconductor process chamber can shield the retaining ring to prevent excessive charge accumulation on it. Furthermore, the retaining ring can release charge after the process is completed, preventing arcing between the retaining ring and the wafer.

Description

Technical Field

[0001] This application relates to the field of semiconductor technology, and more particularly to a semiconductor process chamber. Prior Technology

[0002] During semiconductor manufacturing, charge gradually accumulates on the pressure ring. When the potential difference between the pressure ring and the wafer is too large, arcing can occur between them.

[0003] For example, in the Physical Vapor Deposition (PVD) process, a clamping ring is used to hold the outer periphery of the wafer in place. During the process, most charged particles fall onto the clamping ring, while a small portion falls onto the wafer. The clamping ring remains suspended, and the continuous falling of charged particles causes charge accumulation. When the wafer substrate is made of a poorly conductive material, or when the wafer itself (e.g., a glass wafer) has low conductivity, charge transfer between the clamping ring and the wafer becomes difficult. This results in a very large potential difference between the clamping ring and the metal film deposited on the wafer surface, making arcing more likely.

[0004] In addition, particle deposition on the clamping ring will cause the temperature of the clamping ring to rise. On the one hand, the clamping ring will transfer a limited amount of heat to the surroundings through thermal radiation, and on the other hand, it will transfer a large amount of heat through thermal conduction in the contact area with the wafer, resulting in higher temperatures in local areas of the wafer. This will cause uneven wafer temperature, thus affecting the quality of film formation. Summary of the Invention

[0005] This application provides a semiconductor process chamber to address the problems existing in the prior art.

[0006] The semiconductor process chamber provided in this application includes: a cavity, a shield, a retaining ring, a pressure ring assembly, and a support assembly; the shield is sleeved inside the cavity and grounded through the cavity; the retaining ring and the pressure ring assembly are both sleeved inside the shield; the pressure ring assembly is supported by the shield; the retaining ring is positioned above the pressure ring assembly; the support assembly is used to support the wafer; when the support assembly rises to the process position, the support assembly lifts the pressure ring assembly; the inner edge of the pressure ring assembly presses against the periphery of the wafer; the pressure ring assembly is insulated and separated from both the retaining ring and the shield.

[0007] In some embodiments, the pressure ring assembly includes a pressure ring and a support ring; the support ring is supported on the shield, the pressure ring is supported on the support ring, and the projection of the pressure ring on the retaining ring in the vertical direction is located inside the projection of the shield on the retaining ring in the vertical direction; when the support assembly rises to the process position, the support assembly lifts the support ring, and the inner edge of the pressure ring presses against the periphery of the wafer.

[0008] In some embodiments, the shielding member includes a first main body, a first bent portion, and a second bent portion connected in sequence; the first main body and the second bent portion are spaced apart, the second bent portion is sleeved inside the first main body, and both the first main body and the second bent portion protrude upward relative to the first bent portion; the retaining ring includes a second main body and a third bent portion connected together, the second main body covers the top of the pressure ring assembly, the third bent portion protrudes downward relative to the second main body, the third bent portion is spaced between the first main body and the second bent portion, and the end of the third bent portion facing the first bent portion is supported by the first bent portion.

[0009] In some embodiments, the support ring includes a third main body portion and an outer peripheral portion connected to each other. The outer peripheral portion is disposed on the outer periphery of the third main body portion and is sandwiched between the second bent portion and the second main body portion in the vertical direction. The outer peripheral portion is supported by the second bent portion, and the pressure ring is supported by the third main body portion.

[0010] In some embodiments, the support ring further includes a protrusion connected to the third main body portion, the protrusion extending downward relative to the third main body portion, the protrusion being sleeved within the second bent portion, and the third bent portion having an air hole penetrating the third bent portion along its own thickness direction.

[0011] In some embodiments, the second body portion is provided with a first protruding ring extending toward the pressure ring assembly, the first protruding ring surrounding the axis of the retaining ring; and / or, the pressure ring is provided with a second protruding ring extending toward the second body portion, the second protruding ring surrounding the axis of the pressure ring.

[0012] In some embodiments, the support assembly includes a base and a positioning ring. The base has a bearing area, the positioning ring is sleeved outside the bearing area, and a first positioning post is provided on the upward-facing side of the positioning ring. The support ring has a first positioning hole opposite to the first positioning post, and the pressure ring has a second positioning hole opposite to the first positioning post. When the support assembly rises to the process position, the first positioning post is inserted into the first positioning hole and the second positioning hole.

[0013] In some embodiments, the semiconductor process chamber further includes an insulating support post disposed on the side of the pressure ring assembly facing the retaining ring. When the support assembly is raised to the process position, the pressure ring assembly supports the retaining ring via the insulating support post, thereby insulatingly separating the retaining ring from the shield.

[0014] In some embodiments, the retaining ring has a mating hole and at least three positioning oval holes on the side facing the pressure ring assembly. The positioning oval holes are circumferentially distributed around the axis of the retaining ring, and the long axis of the positioning oval holes extends radially along the retaining ring. The number of insulating supports is equal to the number of mating holes. The semiconductor process chamber also includes a plurality of insulating positioning posts, the number of which is equal to the number of positioning oval holes. When the support assembly rises to the process position, the insulating supports are inserted into the mating holes one by one and support the mating holes. The insulating positioning posts are inserted into the positioning oval holes one by one and position and engage with the sidewalls of the positioning oval holes.

[0015] In some embodiments, the semiconductor process chamber further includes a support member disposed on the side of the retaining ring facing the shield, the retaining ring being connected to the shield via the support member, and the retaining ring being grounded sequentially via the support member, the shield, and the chamber.

[0016] In some embodiments, the pressure ring assembly has a first through hole that penetrates the pressure ring assembly in a vertical direction, and the periphery of the first through hole is used to press the wafer; the retaining ring has a second through hole that penetrates the retaining ring in a vertical direction, and the projection of the inner wall of the second through hole onto the pressure ring assembly in a vertical direction is located around the periphery of the first through hole.

[0017] In some embodiments, the projection of the inner wall of the second perforation onto the pressure ring assembly in a vertical direction is a first projection ring, the area of ​​the upper surface of the pressure ring assembly located inside the first projection ring is a first area, the projection of the inner wall of the first perforation onto the support assembly in a vertical direction is a second projection ring, the area of ​​the second projection ring is a second area, and the difference between the first area and the second area is less than a preset value.

[0018] The above-described technical solutions adopted in the embodiments of this application can achieve the following beneficial effects: In the embodiments of this application, during the wafer fabrication process, the support assembly rises to the processing position, and a retaining ring is positioned above the pressure ring assembly. The pressure ring assembly is insulated from both the retaining ring and the shielding component. Thus, the retaining ring effectively shields the pressure ring assembly, reducing particle deposition on the pressure ring assembly, decreasing heat transfer from the pressure ring assembly to the wafer, and mitigating the temperature impact of the pressure ring assembly on the wafer, thereby improving the film quality of the wafer. Furthermore, the retaining ring also shields the pressure ring assembly, reducing the amount of charge accumulated on the pressure ring assembly, thus mitigating the problem of arcing between the pressure ring assembly and the wafer.

[0019] Furthermore, after the manufacturing process is complete, the support assembly descends, and the retaining ring assembly also descends to its position supported by the shielding component. Charged particles accumulated on the retaining ring assembly are released to the grounding terminal through the shielding component and the cavity. Specifically, if the retaining ring can be lifted, after the manufacturing process is complete, the retaining ring also descends to its position supported by the shielding component, and the charged particles accumulated on the retaining ring are also released to the grounding terminal through the shielding component and the cavity; if the retaining ring is always supported by the shielding component, the charged particles on the retaining ring are immediately released to the grounding terminal through the shielding component and the cavity. In this way, by releasing charge from the retaining ring assembly and the retaining ring, charge accumulation on the retaining ring assembly and the retaining ring is prevented. This prevents arcing caused by charge accumulation on the retaining ring assembly and the retaining ring. Simple Explanation of the Diagram

[0020] To more clearly illustrate the technical solutions in the embodiments or related technologies of this application, the drawings used in the description of the embodiments or related technologies will be briefly introduced below. Obviously, the drawings described below are only some embodiments recorded in this application. For those skilled in the art, other drawings can be obtained based on these drawings without creative effort. Figure 1 is a schematic diagram of a semiconductor process chamber provided in an embodiment of this application, showing the situation where the support component rises to the process position; Figure 2 is a partial schematic diagram of the semiconductor process chamber shown in Figure 1; Figure 3 is a partial schematic diagram of a semiconductor process chamber provided in an embodiment of this application, showing the situation where the support assembly descends to the position separated from the pressure ring assembly; Figure 4 is a partial schematic diagram of another semiconductor process chamber provided in an embodiment of this application, showing the situation where the support component rises to the process position; Figure 5 is a bottom view of a retaining ring provided in an embodiment of this application; Figure 6 is a schematic diagram of a support ring provided in an embodiment of this application; Figure 7 is a schematic diagram of a retaining ring and a pressure ring provided in an embodiment of this application; Figure 8 is a schematic diagram of a base and a positioning ring provided in an embodiment of this application; Figure 9 is a schematic diagram of a retaining ring provided in an embodiment of this application. Implementation

[0021] To make the objectives, technical solutions, and advantages of this application clearer, the technical solutions of this application will be clearly and completely described below in conjunction with specific embodiments and corresponding drawings. Obviously, the described embodiments are only a part of the embodiments of this application, and not all of them. Based on the embodiments in this application, all other embodiments obtained by those skilled in the art without creative effort are within the scope of protection of this application.

[0022] In the description of this application, it should be noted that, unless otherwise expressly specified and limited, the terms "installation," "connection," and "joining" should be interpreted broadly. For example, they can refer to a fixed connection, a detachable connection, or an integral connection; they can refer to a direct connection or an indirect connection through an intermediate medium; and they can refer to the internal connection of two components. Those skilled in the art can understand the specific meaning of the above terms in this application based on the specific circumstances.

[0023] Furthermore, although the terminology used in this application is selected from commonly known and used terms, some terms mentioned in this application specification may have been selected by the applicant in his or her judgment, and their detailed meanings are explained in the relevant sections of the description herein.

[0024] Furthermore, this application is required to be understood not only through the actual terms used, but also through the meaning implied by each term.

[0025] The technical solutions provided by the various embodiments of this application are described in detail below with reference to the accompanying drawings.

[0026] This application provides a semiconductor process chamber. Referring to Figures 1 to 9, the semiconductor process chamber 100 provided in this application includes: a cavity 110, a shield 120, a retaining ring 130, a pressure ring assembly 140, and a support assembly 150. Exemplarily, the semiconductor process chamber 100 is a physical vapor deposition (PVD) process chamber.

[0027] The shielding element 120 is fitted inside the cavity 110, for example, supported on the upper end of the cavity 110, and grounded through the cavity 110. The shielding element 120 is used to conduct away electrons ionized inside the semiconductor process chamber 100 and to protect other components inside the semiconductor process chamber 100.

[0028] Both the retaining ring 130 and the pressure ring assembly 140 are fitted inside the shielding member 120, with the pressure ring assembly 140 supported by the shielding member 120. The retaining ring 130 covers the pressure ring assembly 140 and is supported by the shielding member 120. The support assembly 150 is used to support the wafer 200.

[0029] When the support assembly 150 rises to the process position, the support assembly 150 lifts the pressure ring assembly 140, and the inner edge of the pressure ring assembly 140 presses against the periphery of the wafer 200. The pressure ring assembly 140 is insulated and separated from the retaining ring 130 and the shield 120, respectively.

[0030] It should be noted that in the embodiments of this application, the clamping ring assembly 140 is supported by the shielding member 120, but this does not mean that the clamping ring assembly 140 must always remain supported by the shielding member 120. For example, when the semiconductor process chamber 100 is in the pre-processing preparation state, the clamping ring assembly 140 is supported by the shielding member 120. When the support assembly 150 rises to the processing position, the support assembly 150 can lift the clamping ring assembly 140, thereby separating the clamping ring assembly 140 from the shielding member 120. After the semiconductor process chamber 100 completes the process, the clamping ring assembly 140 descends with the support assembly 150 until it is supported by the shielding member 120, and then the support assembly 150 continues to descend and separates from the clamping ring assembly 140. In other words, since the clamping ring assembly 140 is detachably supported by the shielding member 120, it can separate from the shielding member 120 when the clamping ring assembly 140 is subjected to a lifting driving force.

[0031] Furthermore, the fact that the retaining ring 130 is supported by the shielding member 120 does not mean that the retaining ring 130 must always remain supported by the shielding member 120. For example, in some embodiments, when the semiconductor process chamber 100 is in a pre-processing preparation state, the retaining ring 130 is supported by the shielding member 120. When the support assembly 150 rises to the processing position, the support assembly 150 can lift the retaining ring 130 via the pressure ring assembly 140, thereby separating the retaining ring 130 from the shielding member 120. After the semiconductor process chamber 100 completes the process, the pressure ring assembly 140 descends with the support assembly 150 until the pressure ring assembly 140 is supported by the shielding member 120. Afterward, the support assembly 150 continues to descend and separates from the pressure ring assembly 140, and the retaining ring 130 is still supported by the shielding member 120. In other words, in some embodiments, the retaining ring 130 is detachably supported by the shielding member 120, and the retaining ring 130 can be separated from the shielding member 120 when the retaining ring 130 is subjected to a lifting driving force. In some other embodiments, the retaining ring 130 may always be supported on the shield 120, regardless of whether the semiconductor process chamber 100 is in a process state. For example, the retaining ring 130 may be supported on top of and connected to the shield 120, such that the retaining ring 130 is always supported on the shield 120.

[0032] In this manner, in the embodiments of this application, during the processing of wafer 200, the support assembly 150 rises to the processing position, and the retaining ring 130 covers the pressure ring assembly 140. The pressure ring assembly 140 is insulated and separated from both the retaining ring 130 and the shielding member 120. Thus, the retaining ring 130 can shield the pressure ring assembly 140, thereby reducing the amount of particles deposited on the pressure ring assembly 140, reducing the heat transferred from the pressure ring assembly 140 to the wafer 200, and weakening the temperature effect of the pressure ring assembly 140 on the wafer 200, thereby improving the film quality of the wafer 200. Furthermore, the retaining ring 130 can shield the pressure ring assembly 140, reducing the amount of charge accumulated on the pressure ring assembly 140, thus mitigating the problem of arcing between the pressure ring assembly 140 and the wafer 200.

[0033] Furthermore, after the process is completed, the support assembly 150 descends, and the pressure ring assembly 140 also descends to the position supported by the shield 120. Charged particles accumulated on the pressure ring assembly 140 are released to the grounding terminal via the shield 120 and the cavity 110. Specifically, when the retaining ring 130 can be lifted, after the process is completed, the retaining ring 130 also descends to the position supported by the shield 120, and the charged particles accumulated on the retaining ring 130 are also released to the grounding terminal via the shield 120 and the cavity 110; when the retaining ring 130 is always supported by the shield 120, the charged particles on the retaining ring 130 are immediately released to the grounding terminal via the shield 120 and the cavity 110. In this way, by releasing the charge from the pressure ring assembly 140 and the retaining ring 130, charge accumulation on the pressure ring assembly 140 and the retaining ring 130 can be avoided, thus preventing arcing caused by charge accumulation on the pressure ring assembly 140 and the retaining ring 130.

[0034] Referring to Figures 1 to 3, in some embodiments, the retaining ring assembly 140 includes a retaining ring 141 and a support ring 142. The support ring 142 is supported by the shield 120, and the retaining ring 141 is supported by the support ring 142. The projection of the retaining ring 141 in the vertical direction onto the retaining ring 130 is located inside the projection of the shield 120 in the vertical direction onto the retaining ring 130. When the support assembly 150 is raised to the process position, the support assembly 150 lifts the support ring 142, and the inner edge of the retaining ring 141 presses against the periphery of the wafer 200.

[0035] In this way, by dividing the pressure ring assembly 140 into a pressure ring 141 and a support ring 142, with the pressure ring 141 pressing against the wafer 200 and the support ring 142 supporting the support assembly 150, the pressure ring assembly 140 is prevented from pressing entirely against the wafer 200, thus avoiding damage to the wafer 200 due to excessive weight. Furthermore, since the projection of the pressure ring 141 along the vertical direction onto the retaining ring 130 is located inside the projection of the shielding member 120 along the vertical direction onto the retaining ring 130, the outer diameter of the pressure ring 141 can be reduced, thereby reducing its weight. This prevents damage to the wafer 200 due to excessive weight of the pressure ring 141.

[0036] It should be noted that during the processing of wafer 200, the gas outlet device below wafer 200 can blow gas onto wafer 200 to cool it. Using the solution provided in this embodiment, the pressure ring 141 presses against the periphery of wafer 200, thereby sealing off the back-blown gas and improving the cooling effect on wafer 200.

[0037] Although those skilled in the art can design the structure of shielding components and other parts by referring to related technologies, in order to facilitate those skilled in the art to better implement the solutions provided in the embodiments of this application, the following provides a more detailed description of the structure of shielding components and other parts for reference by those skilled in the art.

[0038] Referring to Figure 2, in some embodiments, the shielding member 120 includes a first main body portion 121, a first bent portion 122, and a second bent portion 123 connected in sequence. The first main body portion 121 and the second bent portion 123 are spaced apart, and the second bent portion 123 is sleeved within the first main body portion 121. Both the first main body portion 121 and the second bent portion 123 protrude upward relative to the first bent portion 122. In other words, the shielding member 120 has a bent structure, and the shielding member 120 forms a U-shaped groove by bending to support the retaining ring 130 and the pressure ring assembly 140 after the manufacturing process is completed.

[0039] Referring to Figures 1 and 2, in some embodiments, the retaining ring 130 includes a second main body portion 131 and a third bent portion 132 connected together. The second main body portion 131 covers the pressure ring assembly 140, and the third bent portion 132 protrudes downward relative to the second main body portion 131. The third bent portion 132 is spaced between the first main body portion 121 and the second bent portion 122, and the end of the third bent portion 132 facing the first bent portion 122 is supported by the first bent portion 122. In this way, the retaining ring 130 can be supported by the first bent portion 122.

[0040] Referring to FIG2, in some embodiments, the support ring 142 includes a third main body portion 1421 and an outer peripheral portion 1422 connected to each other. The outer peripheral portion 1422 is disposed on the outer periphery of the third main body portion 1421. The outer peripheral portion 1422 is sandwiched between the second bend portion 123 and the second main body portion 131 in the vertical direction, and the outer peripheral portion 1422 is supported by the second bend portion 123, while the pressure ring 141 is supported by the third main body portion 1421.

[0041] Furthermore, the outer peripheral portion 1422 protrudes upward relative to the third main body portion 1421. The pressure ring 141 is fitted inside the outer peripheral portion 1422. In this way, the outer diameter of the pressure ring 141 can be reduced, thereby reducing the weight of the pressure ring 141.

[0042] Referring to Figures 1, 2, and 4, in some embodiments, the support ring 142 further includes a protrusion 1423 connected to the third main body portion 1421. The protrusion 1423 protrudes downward relative to the third main body portion 1421 and is fitted within the second bent portion 123. Thus, a first labyrinthine channel can be formed between the protrusion 1423, the outer peripheral portion 1422, the second bent portion 123, the third bent portion 132, the second bent portion 123, and the first main body portion 121. This first labyrinthine channel is used to transport process gas from the lower cavity 110a to the upper cavity 110b. Furthermore, the first labyrinthine channel prevents target atoms in the upper cavity 110b from moving to the lower cavity 110a via the first labyrinthine channel, thereby contaminating the cavity wall of the lower cavity 110a.

[0043] In some embodiments, referring to Figures 2, 4, 7, and 9, the third bend 132 is provided with a vent 1321 extending through it along its own thickness direction. Thus, during the wafer 200 processing, if the distance between the third bend 132 and the first bend 122 is small, the process gas can flow through the vent 1321, allowing for smoother flow of the process gas.

[0044] Referring to Figure 2, in some embodiments, when the support assembly 150 rises to the process position, i.e., during the process of processing the wafer 200, the upper surface of the retaining ring assembly 140 and the lower surface of the retaining ring 130 form a gap region. This gap region is used to insulate and separate the retaining ring assembly 140 and the retaining ring 130 from each other.

[0045] The gap between the upper surface of the pressure ring assembly 140 and the lower surface of the retaining ring 130 communicates with the first labyrinth channel. Therefore, target atoms in the upper cavity 110b may sputter across the entire upper surface of the pressure ring 141 via the gap. To avoid this problem, referring to Figures 2 and 4, in some embodiments, the second body portion 131 is provided with a first protruding ring 133 protruding toward the pressure ring assembly 140, the first protruding ring 133 surrounding the axis of the retaining ring 130. Exemplarily, the number of first protruding rings 133 can be one or at least two. And / or, the pressure ring 141 is provided with a second protruding ring 1411 protruding toward the second body portion 131, the second protruding ring 1411 surrounding the axis of the pressure ring 141. This allows a second labyrinth channel to be formed between the upper surface of the pressure ring assembly 140 and the lower surface of the retaining ring 130, preventing target atoms in the upper cavity 110b from moving toward the center of the second labyrinth channel.

[0046] It should be noted that, to avoid excessive potential difference between the retaining ring 130 and the pressure ring 141, which could lead to discharge, the distance between the opposing surfaces of the retaining ring 130 and the pressure ring 141 can be approximately 3 mm. Of course, those skilled in the art can flexibly adjust the distance between the opposing surfaces of the retaining ring 130 and the pressure ring 141 according to actual needs; these adjustments will not be listed here. Similarly, to avoid excessive potential difference between the retaining ring 130 and the support ring 142, which could lead to discharge, the distance between the opposing surfaces of the retaining ring 130 and the support ring 142 can be approximately 3 mm. Again, those skilled in the art can flexibly adjust the distance between the opposing surfaces of the retaining ring 130 and the support ring 142 according to actual needs; these adjustments will not be listed here.

[0047] Referring to Figures 1, 2, and 8, in some embodiments, the support assembly 150 includes a base 151 and a positioning ring 152. The base 151 has a support area 1511. The support area 1511 is used to support the wafer 200. The positioning ring 152 is sleeved outside the support area 1511, and a first positioning post 1521 is provided on the upward-facing side of the positioning ring 152. Referring to Figures 4 and 6, the support ring 142 has a first positioning hole 1424 opposite to the first positioning post 1521. Referring to Figure 4, the pressure ring 141 has a second positioning hole 1412 opposite to the first positioning post 1521. When the support assembly 150 rises to the process position, the first positioning post 1521 is inserted into the first positioning hole 1424 and the second positioning hole 1412. The first positioning post 1521 is positioned and engaged with the hole wall of the first positioning hole 1424 and the hole wall of the second positioning hole 1412, respectively.

[0048] For example, the number of first positioning posts 1521 is at least two. For instance, the number of first positioning posts 1521 is three. This prevents misalignment between the pressure ring 141 and the wafer 200 supported on the base 151 by positioning the support assembly 150 with the pressure ring 141. Furthermore, the support assembly 150 can be positioned with the support ring 142, and the support ring 142 can be positioned with the retaining ring 130, thus preventing misalignment between the retaining ring 130 and the pressure ring 141.

[0049] Referring to Figure 2, in some embodiments, the inner circumferential surface of the positioning ring 152 is provided with an annular inclined surface 1522. The opening formed by the annular inclined surface 1522 gradually increases in the vertically upward direction. In this way, the annular inclined surface 1522 can be used to guide the wafer 200 to be carried on the carrier region 1511. During the process of the wafer 200 being carried on the carrier region 1511, the annular inclined surface 1522 can play a positioning role and can prevent the wafer 200 from deviating from the carrier region 1511.

[0050] Referring to Figure 2, in some embodiments, the base 151 is provided with a positioning pin 1512 protruding toward the positioning ring 152, and the positioning ring 152 is provided with a positioning groove. The positioning pin 1512 is positioned and engaged with the positioning groove to prevent the positioning ring 152 from being misaligned relative to the base 151.

[0051] In some embodiments, as shown in FIG1, the support assembly 150 further includes a cooling plate 153, an insulating plate 154, a bellows (not shown), and a column 156. The cooling plate 153 is disposed below the base 151 and is used to cool the base 151, thereby indirectly cooling the wafer 200. The bellows (not shown) is disposed below the insulating plate 154, with one end connected to the insulating plate 154 via a top plate 155, and the other end connected to the column 156 via a bottom plate (not shown). Furthermore, the column 156 is connected to a driver. The driver is used to drive the column 156 to rise and fall, thereby causing the entire support assembly 150 to rise and fall.

[0052] Referring to Figures 2, 3, and 6, in some embodiments, the semiconductor process chamber 100 further includes an insulating support 161. The insulating support 161 is located on the side of the retaining ring assembly 140 facing the retaining ring 130. When the support assembly 150 is raised to the process position, the retaining ring assembly 140 supports the retaining ring 130 via the insulating support 161, thus insulatingly separating the retaining ring 130 from the shield 120. In this way, by using insulating supports 161 of different heights to lift the retaining ring 130, the wafer 200 can be raised to a higher height (i.e., the retaining ring 130 can be raised to different heights to suit different process positions required by different processes), thereby facilitating atomic deposition on the wafer 200.

[0053] Referring to Figures 2, 3, and 5, in some embodiments, the retaining ring 130 has a mating hole 1341 and at least three positioning oblong holes 1342 on the side facing the pressure ring assembly 140. The positioning oblong holes 1342 are circumferentially distributed around the axis of the retaining ring 130, and the long axis of the positioning oblong holes 1342 extends radially along the retaining ring 130. The number of insulating posts 161 is equal to the number of mating holes 1341. The semiconductor process chamber 100 also includes a plurality of insulating positioning posts 162, the number of which is equal to the number of positioning oblong holes 1342.

[0054] When the support assembly 150 rises to the process position, the insulating pillars 161 are inserted into the docking holes 1341 one by one and support each other in the docking holes 1341, and the insulating positioning pillars 162 are inserted into the positioning oval holes 1342 one by one and position each other in the side wall of the positioning oval holes 1342.

[0055] It should be noted that "semicircle" refers to a closed shape formed by dividing a circle into two semicircular arcs through its center and translating them in opposite directions, connecting the endpoints of the two semicircular arcs with two parallel lines of equal length. "Semicircular hole" refers to a hole with a cross-sectional shape of "semicircle" along its depth direction. "Positioning semicircular hole" refers to a semicircular hole used for positioning. Furthermore, the major axis of the positioning semicircular hole 1342 is collinear with the line connecting the two centers of the semicircle.

[0056] Using the above scheme, the pressure ring assembly 140 and the retaining ring 130 can be positioned by inserting the insulating positioning posts 162 one-to-one into the positioning oblong holes 1342. In addition, the cooperation between the insulating support posts 161 and the mating holes 1341 serves to provide auxiliary support for the retaining ring 130.

[0057] Furthermore, by way of example, the number of positioning oblong holes 1342 can be three, and the number of mating holes 1341 can be three. The positioning oblong holes 1342 and mating holes 1341 are evenly and alternately distributed along the circumferential direction of the retaining ring 130. For example, the central angle formed by adjacent positioning oblong holes 1342 and mating holes 1341 and the center of the retaining ring 130 is 60 degrees.

[0058] It should also be noted that when the pressure ring assembly 140 includes a support ring 142, an insulating support post 161 is provided on the side of the support ring 142 facing the retaining ring 130. Specifically, the insulating support post 161 may be provided on the outer periphery 1422 of the support ring 142. When the support assembly 150 rises to the process position, the support ring 142 supports the retaining ring 130 via the insulating support post 161, thereby insulatingly separating the retaining ring 130 from the shield 120.

[0059] Referring to Figure 4, in some embodiments, the semiconductor process chamber 100 further includes a support member 170. The support member 170 is disposed on the side of the retaining ring 130 facing the shield 120. The retaining ring 130 is connected to the shield 120 via the support member 170, and the retaining ring 130 is grounded sequentially via the support member 170, the shield 120, and the chamber 110. For example, the support member 170 is connected to the third bend 132 of the retaining ring 130 and the first bend 122 of the shield 120, respectively.

[0060] With this design, since the retaining ring 130 is connected to the shield 120 via the support 170, the charge on the retaining ring 130 can be released to the ground terminal via the support 170, the shield 120, and the cavity 110 during the wafer 200 manufacturing process. Thus, during high-power processes, the retaining ring 130 is less likely to arc with adjacent components.

[0061] Furthermore, since the retaining ring 130 is connected to the shielding member 120 via the support member 170, the upper surface of the pressure ring assembly 140 needs to maintain a certain distance from the retaining ring 130 during the wafer 200 manufacturing process.

[0062] Additionally, it should be noted that when the retaining ring 130 is connected to the shield 120 via the support member 170, the distance between the third bend 132 of the retaining ring 130 and the first bend 122 of the shield 120 may be small. Therefore, by providing an air hole 1321 in the third bend 132, the process gas can flow through the air hole 1321, which can make the flow of the process gas smoother.

[0063] The above provides two solutions: one where the retaining ring 130 can be lifted, and another where the retaining ring 130 is connected to the shielding member 120 via the support member 170. In the solution where the retaining ring 130 can be lifted, the retaining ring 130 is grounded when the support assembly 150 descends to a position separated from the pressure ring assembly 140; when the support assembly 150 rises to the process position, the retaining ring 130 separates from the shielding member 120, thus disconnecting the retaining ring 130 from the grounding terminal. That is, in the solution where the retaining ring 130 can be lifted, the retaining ring 130 can switch between a grounded state and a floating state. In the solution where the retaining ring 130 is connected to the shielding member 120 via the support member 170, the retaining ring 130 is always grounded; this solution is suitable for high-power process scenarios.

[0064] Referring to Figures 1, 2, and 7, in some embodiments, the retaining ring assembly 140 has a first through-hole 141a extending vertically through the retaining ring assembly 140. The periphery of the first through-hole 141a is used to cover the wafer 200. The retaining ring 130 has a second through-hole 130a extending vertically through the retaining ring 130. The projection of the inner wall of the second through-hole 130a onto the retaining ring assembly 140 in the vertical direction is located around the periphery of the first through-hole 141a. In this way, the retaining ring 130 can be prevented from obstructing the wafer 200.

[0065] In some embodiments, the projection of the inner wall of the second perforation 130a onto the pressure ring assembly 140 in the vertical direction is a first projection ring, and the area of ​​the surface of the upper side of the pressure ring assembly 140 located inside the first projection ring is a first area. The projection of the inner wall of the first perforation 141a onto the support assembly 150 in the vertical direction is a second projection ring, and the area of ​​the second projection ring is a second area. The difference between the first area and the second area is less than a preset value. For example, the first area and the second area are substantially equal.

[0066] In this way, a portion of the inner circumference of the retaining ring assembly 140 is exposed through the second perforation 130a, allowing charge to accumulate in this exposed area. Furthermore, the upper surface of the wafer 200 is exposed through the first perforation 141a, allowing charge to accumulate there as well. Moreover, by making the first and second areas substantially equal, the charge accumulated in the retaining ring assembly 140 is made substantially equal to the charge accumulated on the upper surface of the wafer 200, thereby reducing the potential difference between the retaining ring assembly 140 and the wafer 200 and preventing arcing between them.

[0067] In some embodiments, when the retaining ring assembly 140 includes a retaining ring 141 and a support ring 142, a first through-hole 141a is formed in the retaining ring 141. A first projection ring is formed in the retaining ring 141, and the first area is the area of ​​the region of the top surface of the retaining ring 141 located within the first projection ring. Furthermore, the second area is the area of ​​the top surface of the wafer 200 not obscured by the retaining ring 141. In other words, the second area is the area of ​​the wafer 200 exposed through the first through-hole 141a of the retaining ring 141.

[0068] It should be noted that in the above embodiments, the pressure ring assembly 140 mainly provides a scheme in which the pressure ring 141 and the support ring 142 are separately arranged. It can be understood that in other embodiments, the pressure ring 141 and the support ring 142 can also be set as an integral structure. In this way, the integral pressure ring assembly 140 can also be used to cover the wafer 200, and the pressure ring assembly 140 can release the charge through the shield 120 and the cavity 110 after the process is completed. However, it should also be noted that by using a separate pressure ring assembly 140, since the support ring 142 can be supported by the support assembly 150, the load on the wafer 200 can be reduced, and the pressure ring assembly 140 can prevent the wafer 200 from being crushed by the pressure ring assembly 140.

[0069] Referring to Figure 1, in some embodiments, the semiconductor process chamber 100 further includes a cavity adapter 111. The cavity adapter 111 is supported at the top of the cavity 110. A shield 120 is supported on the cavity adapter 111. Further, the semiconductor process chamber 100 also includes an insulating ring 112 and a target assembly 113. The insulating ring 112 is supported on the cavity adapter 111, and the target assembly 113 is supported on the insulating ring 112. Further, the semiconductor process chamber 100 also includes a magnetron 180. The magnetron 180 is disposed above the target assembly 113.

[0070] It should be noted that, in this document, relational terms such as "first" and "second" are used only to distinguish one entity or operation from another, and do not necessarily require or imply any such actual relationship or order between these entities or operations. Furthermore, the terms "comprising," "including," or any other variations thereof are intended to cover non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements includes not only those elements but also other elements not expressly listed, or elements inherent to such process, method, article, or apparatus.

[0071] Although embodiments of this application have been shown and described, it will be understood by those skilled in the art that various changes, modifications, substitutions and variations can be made to these embodiments without departing from the principles and spirit of the embodiments of this application, the scope of which is defined by the appended claims and their equivalents.

[0072] 100: Semiconductor process chamber 110: Cavity 110a: Lower cavity 110b: Upper cavity 111: Cavity Adapter 112: Insulating ring 113: Target assembly 120: Shielding components 121: First Main Body 122: First bend 123: Second bend 130: Retaining ring 130a: Second perforation 131: Second Main Body 132: Third bend 133: First convex ring 140: Pressure ring assembly 141: Pressure Ring 141a: First perforation 142: Support ring 150: Support components 151: Base 152: Positioning ring 153: Cooling Pan 154: Insulating disc 155: Top Plate 156: Column 161: Insulating Post 162: Insulating positioning post 170: Support component 180: Magnetron 200: Wafer 1321: Stomata 1341: Connecting hole 1342: Locating oval hole 1411: Second convex ring 1412: Second positioning hole 1421: Third Main Body 1422:Peripheral part 1423: Protrusion 1424: First positioning hole 1511: Bearing Area 1512: Positioning pin 1521: First positioning post 1522: Circular Inclined Plane

Claims

1. A semiconductor process chamber, comprising: Cavity, shielding components, retaining rings, pressure ring assemblies, and support assemblies; The shielding component is fitted inside the cavity and grounded through the cavity. The retaining ring and the pressure ring assembly are both fitted inside the shielding component. The pressure ring assembly is supported by the shielding component. The retaining ring is positioned above the pressure ring assembly and is supported by the shielding component. The support assembly is used to support the wafer. When the support assembly rises to the process position, the support assembly lifts the pressure ring assembly. The inner edge of the pressure ring assembly presses against the periphery of the wafer. The pressure ring assembly is insulated and separated from the retaining ring and the shielding component.

2. The semiconductor process chamber according to claim 1, wherein, The pressure ring assembly includes a pressure ring and a support ring; the support ring is supported by the shield, the pressure ring is supported by the support ring, and the projection of the pressure ring on the retaining ring in the vertical direction is located inside the projection of the shield on the retaining ring in the vertical direction; when the support assembly is raised to the process position, the support assembly lifts the support ring, and the inner edge of the pressure ring presses against the periphery of the wafer.

3. The semiconductor process chamber according to claim 2, wherein, The shielding component includes a first main body, a first bent portion, and a second bent portion connected in sequence; the first main body and the second bent portion are spaced apart, the second bent portion is sleeved inside the first main body, and both the first main body and the second bent portion protrude upward relative to the first bent portion; the retaining ring includes a second main body and a third bent portion connected together, the second main body covers the top of the pressure ring assembly, the third bent portion protrudes downward relative to the second main body, the third bent portion is spaced between the first main body and the second bent portion, and the end of the third bent portion facing the first bent portion is supported by the first bent portion.

4. The semiconductor process chamber according to claim 3, wherein, The support ring includes a third main body portion and an outer peripheral portion connected to each other. The outer peripheral portion is disposed on the outer periphery of the third main body portion and is sandwiched between the second bend portion and the second main body portion in the vertical direction. The outer peripheral portion is supported by the second bend portion, and the pressure ring is supported by the third main body portion.

5. The semiconductor process chamber according to claim 4, wherein, The support ring also includes a protrusion connected to the third main body, the protrusion protruding downward relative to the third main body, the protrusion being fitted inside the second bend, and the third bend having an air hole penetrating the third bend along its own thickness direction.

6. The semiconductor process chamber according to claim 3, wherein, The second main body portion is provided with a first protruding ring extending toward the pressure ring assembly, the first protruding ring surrounding the axis of the retaining ring; and / or, the pressure ring is provided with a second protruding ring extending toward the second main body portion, the second protruding ring surrounding the axis of the pressure ring.

7. The semiconductor process chamber according to claim 2, wherein, The support assembly includes a base and a positioning ring. The base has a bearing area, and the positioning ring is sleeved outside the bearing area. The upward-facing side of the positioning ring has a first positioning post. The support ring has a first positioning hole opposite to the first positioning post, and the pressure ring has a second positioning hole opposite to the first positioning post. When the support assembly rises to the process position, the first positioning post is inserted into the first positioning hole and the second positioning hole.

8. The semiconductor process chamber according to claim 1, wherein, The semiconductor process chamber also includes an insulating support pillar located on the side of the pressure ring assembly facing the retaining ring. When the support assembly is raised to the process position, the pressure ring assembly supports the retaining ring via the insulating support pillar, thereby insulatingly separating the retaining ring from the shield.

9. The semiconductor process chamber according to claim 8, wherein, The retaining ring has a mating hole and at least three positioning oval holes on the side facing the pressure ring assembly. The positioning oval holes are circumferentially distributed around the axis of the retaining ring, and the long axis of the positioning oval holes extends radially along the retaining ring. The number of insulating supports is equal to the number of mating holes. The semiconductor process chamber also includes a plurality of insulating positioning posts, the number of which is equal to the number of positioning oval holes. When the support assembly is raised to the process position, the insulating supports are inserted into the mating holes one by one and support the mating holes. The insulating positioning posts are inserted into the positioning oval holes one by one and position and engage with the sidewalls of the positioning oval holes.

10. The semiconductor process chamber according to claim 1, wherein, The semiconductor process chamber also includes a support member, which is located on the side of the retaining ring facing the shield. The retaining ring is connected to the shield via the support member, and the retaining ring is grounded in sequence via the support member, the shield, and the chamber.

11. The semiconductor process chamber according to claim 1, wherein, The pressure ring assembly has a first through hole that penetrates the pressure ring assembly in a vertical direction, and the periphery of the first through hole is used to cover the wafer; the retaining ring has a second through hole that penetrates the retaining ring in a vertical direction, and the projection of the inner wall of the second through hole onto the pressure ring assembly in a vertical direction is located around the periphery of the first through hole.

12. The semiconductor process chamber according to claim 11, wherein, The projection of the inner wall of the second perforation onto the pressure ring assembly in the vertical direction is the first projection ring. The area of ​​the upper surface of the pressure ring assembly located inside the first projection ring is the first area. The projection of the inner wall of the first perforation onto the support assembly in the vertical direction is the second projection ring. The area of ​​the second projection ring is the second area. The difference between the first area and the second area is less than a preset value.

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