Reactor system

Abstract

A reactor system may include a first gas source, a second gas source, and a reaction chamber, the reaction chamber being fluidly coupled to the first gas source and the second gas source, wherein a first gas and a second gas can be supplied to the reaction chamber from the first gas source and the second gas source, respectively, to achieve pressure stability in the reaction chamber. The reactor system may further include an exhaust line fluidly coupled to and downstream of the reaction chamber; a vent line fluidly coupled to the first gas source and / or the second gas source, and fluidly coupled to the exhaust line, wherein the vent line bypasses the reaction chamber; a pressure monitor coupled to the exhaust line, the pressure monitor being configured to monitor the pressure of one of the vent lines within the vent line; and / or a vent line gas-guided control valve coupled to the vent line and configured to adjust in response to feedback from the pressure monitor.

Description

Technical Field

[0001] This disclosure generally relates to a gas supply system for a reaction chamber, specifically a method for stabilizing the pressure in the reaction chamber while simultaneously supplying gas to the reaction chamber. Prior Technology

[0002] The reaction chamber can be used to deposit various material layers onto a semiconductor substrate. The substrate can be placed on a pedestal inside the reaction chamber. Both the substrate and the pedestal can be heated to a desired substrate temperature setpoint. In one example substrate processing procedure, one or more reactant gases can pass over a heated substrate, causing a thin film of material to be deposited on the substrate surface. Throughout subsequent deposition, doping, lithography, etching, and / or other processes, these layers are fabricated into devices (such as integrated circuits).

[0003] For any given process, reactant gases and / or any byproduct gases can then be removed from the reaction chamber via vacuum and / or purging. Controlling the flow rate and supply time of materials containing, for example, reactant gases used to form a membrane is important for achieving the desired results and the desired apparatus stability. Furthermore, maintaining a substantially constant pressure within the reaction chamber before, during, and / or after the reaction can facilitate achieving the desired results in the deposited layer on the substrate. Summary of the Invention

[0004] This invention provides a simplified description of a series of concepts. These concepts are further elaborated in the following detailed description of illustrative examples of the disclosure. This invention is not intended to identify key or essential features of the claimed subject matter, nor is it intended to limit the scope of the claimed subject matter.

[0005] In some embodiments, a reactor system is provided. The reactor system disclosed herein may include a gas supply system that allows pressure stabilization within one of the reaction chambers of the reactor system. Thus, for example, changing the gas supplied to a reaction chamber during a process (such as deposition, etching, or cleaning) within a reaction chamber may not significantly affect the reaction chamber pressure, allowing for greater control over the process and its results.

[0006] In various embodiments, a reactor system may include a first gas source; a first gas supply path fluidly coupled to the first gas source; a second gas source; a second gas supply path fluidly coupled to the second gas source; and a reaction chamber fluidly coupled to both the first and second gas supply paths, wherein the first gas supply path may fluidly couple to the reaction chamber at one end, and the second gas supply path may fluidly couple to the reaction chamber at one end, wherein a first gas may be supplied from the first gas source to the reaction chamber and a second gas may be supplied from the second gas source to the reaction chamber. A gas source is supplied to the reaction chamber to achieve pressure stability in the reaction chamber; an exhaust line fluidly coupled to and downstream of the reaction chamber; a vent line fluidly coupled to at least one of a first gas supply path and a second gas supply path, and coupled to the exhaust line, wherein the vent line bypasses the reaction chamber; a pressure monitor coupled to the vent line and configured to monitor the pressure of one of the vent lines within the vent line; and / or a vent line pneumatic control valve coupled to the vent line, wherein the vent line pneumatic control valve can be configured to adjust in response to feedback from the pressure monitor.

[0007] In various embodiments, the reaction chamber may be fluidly coupled to a first gas supply path and a second gas supply path via a chamber inlet path, wherein the first gas supply path may be fluidly coupled to the chamber inlet path at its end, and the second gas supply path may be fluidly coupled to the chamber inlet path at its end. In various embodiments, the first gas supply path may include a first main gas line and a first branch gas line, wherein the first main gas line is fluidly connected to the reaction chamber, and wherein the first branch gas line is fluidly connected to a vent line. In various embodiments, the second gas supply path may include a second main gas line and a second branch gas line, wherein the second main gas line is fluidly connected to the reaction chamber, and wherein the second branch gas line is fluidly connected to a vent line.

[0008] In various embodiments, the first gas main line may include a first main line valve located upstream of the reaction chamber and downstream of a first gas branch line, wherein the first gas branch line may include a first branch line valve. The second gas main line may include a second main line valve located upstream of the reaction chamber and downstream of the second gas branch line, wherein the second gas branch line may include a second branch line valve. The first main line valve, second main line valve, first branch line valve, and second branch line valve may be configured to at least partially increase or decrease the gas flow through one of the first gas main line, second gas main line, first gas branch line, and second gas branch line.

[0009] In various embodiments, the reactor system may further include a processor electronically communicating with a pressure monitor and a vent line pneumatic control valve; and a tangible, non-transitory memory configured to communicate with the processor, the tangible, non-transitory memory having instructions stored thereon that respond to the processor's execution, causing the processor to perform certain operations or facilitating the execution of certain operations. Such operations may include monitoring the vent line pressure within the vent line via the pressure monitor; detecting a change in the vent line pressure via the processor; and / or commanding the vent line pneumatic control valve to adjust such that a valve position of the vent line pneumatic control valve becomes more open or more closed in response to the detected change in vent line pressure. In various embodiments, detecting a change in vent line pressure may include detecting a difference between the vent line pressure and the reaction chamber pressure, and wherein the adjustment of the vent line pneumatic control valve may be configured such that the difference between the vent line pressure and the reaction chamber pressure is minimized.

[0010] In various embodiments, a method may include: flowing a first gas from a first gas source to a reaction chamber, such that the reaction chamber contains a desired pressure level; while the flow of the first gas from the first gas source to the reaction chamber occurs, flowing a second gas from a second gas source via a vent line to an exhaust line downstream of the reaction chamber, wherein the vent line is in fluid communication with the second gas source and the exhaust line and bypasses the reaction chamber; stopping the flow of the first gas to the reaction chamber; reducing and / or stopping the flow of the second gas to the exhaust line; in response to reducing and / or stopping the flow of the second gas to the exhaust line, allowing the second gas to flow to the reaction chamber, such that the reaction chamber can maintain the desired pressure level; monitoring the pressure of a vent line via a pressure monitor coupled to the vent line; and / or adjusting a vent line gas-guided control valve coupled to the vent line based on the vent line pressure detected by the pressure monitor.

[0011] In various embodiments, the pressure monitor may electronically communicate with the vent line pneumatic control valve via a processor. The processor may receive pressure feedback from the pressure monitor and transmit a command to the vent line pneumatic control valve, causing adjustment of the vent line pneumatic control valve. In various embodiments, reducing and / or stopping the flow of the second gas to the exhaust line may occur simultaneously with stopping the flow of the first gas to the reaction chamber. In various embodiments, allowing the second gas to flow from a second gas source to the exhaust line via the vent line may include allowing the second gas to flow through a second gas supply path, which may include a second gas main line and a second gas branch line, wherein the second gas main line may be in fluid communication with the reaction chamber, and wherein the second gas branch line may be in fluid communication with the vent line. Reducing or stopping the flow of the second gas to the exhaust line may occur in response to at least partially closing a second branch line valve coupled to one of the second gas branch lines. Allowing the second gas to flow to the reaction chamber may occur in response to at least partially opening a second main line valve downstream of the second gas branch line coupled to one of the second gas main lines.

[0012] In various embodiments, the method may further include detecting an increase in one of the ventilation line pressures, wherein adjusting the ventilation line air conduction control valve may include causing one of the ventilation line air conduction control valves to be more closed to allow less flow through the ventilation line; and / or detecting a decrease in one of the ventilation line pressures, wherein adjusting the ventilation line air conduction control valve may include causing one of the ventilation line air conduction control valves to be more open to allow greater flow through the ventilation line.

[0013] In various embodiments, a method may include: flowing a first gas from a first gas source to a reaction chamber, such that the reaction chamber contains a desired pressure level; simultaneously, while the first gas flows from the first gas source to the reaction chamber, flowing a second gas from a second gas source via a vent line to an exhaust line downstream of the reaction chamber, wherein the vent line is in fluid communication with the second gas source and the exhaust line and bypasses the reaction chamber; stopping the flow of the first gas to the reaction chamber; reducing and / or stopping the flow of the second gas to the exhaust line; in response to stopping the flow of the first gas to the reaction chamber, flowing the first gas via the vent line to the exhaust line, wherein the vent line is in fluid communication with the first gas source; in response to reducing and / or stopping the flow of the second gas to the exhaust line, flowing the second gas to the reaction chamber, such that the reaction chamber can maintain a desired pressure level; monitoring a vent line pressure via a pressure monitor coupled to the vent line; and / or adjusting a vent line gas-guided control valve coupled to the vent line based on the vent line pressure detected by the pressure monitor. In various embodiments, reducing and / or stopping the flow of the second gas to the exhaust line can occur simultaneously with stopping the flow of the first gas to the reaction chamber. In various embodiments, allowing the second gas to flow to the reaction chamber can occur simultaneously with allowing the first gas to flow to the exhaust line.

[0014] In various embodiments, allowing the first gas to flow from a first gas source to the reaction chamber may include flowing the first gas through a first gas supply path, which may include a first gas main line and a first gas branch line, wherein the first gas main line may be in fluid communication with the reaction chamber, and wherein the first gas branch line may be in fluid communication with a vent line. Stopping the flow of the first gas to the reaction chamber may occur in response to closing a first main line valve downstream of the first gas branch line coupled to one of the first gas main lines. Allowing the first gas to flow via the vent line to the exhaust line may occur in response to opening a first branch line valve coupled to one of the first gas branch line valves.

[0015] In various embodiments, allowing the second gas to flow from a second gas source to an exhaust line via a vent line may include allowing the second gas to flow through a second gas supply path, which may include a second gas main line and a second gas branch line, wherein the second gas main line may be in fluid communication with the reaction chamber, and wherein the second gas branch line may be in fluid communication with the vent line. Reducing and / or stopping the flow of the second gas to the exhaust line may occur in response to at least partially closing a second branch line valve coupled to one of the second gas branch lines. Allowing the second gas to flow to the reaction chamber may occur in response to at least partially opening a second main line valve downstream of the second gas branch line coupled to one of the second gas main lines.

[0016] In various embodiments, the method may further include detecting a decrease in one of the ventilation line pressures, wherein adjusting the ventilation line pneumatic control valve may include causing one of the valve positions of the ventilation line pneumatic control valve to be more open to allow more flow through the ventilation line; and / or detecting an increase in one of the ventilation line pressures, wherein adjusting the ventilation line pneumatic control valve may include causing one of the valve positions of the ventilation line pneumatic control valve to be more closed to allow less flow through the ventilation line. In various embodiments, detecting a decrease in ventilation line pressure and / or detecting an increase in ventilation line pressure may include detecting a difference between the ventilation line pressure and a reaction chamber pressure in the reaction chamber. In various embodiments, adjusting the ventilation line pneumatic control valve may result in a smaller difference between the ventilation line pressure and the reaction chamber pressure.

[0017] For the purpose of summarizing this disclosure and the advantages achieved over the prior art, certain objectives and advantages of this disclosure have been described above. It should be understood, of course, that not all such objectives or advantages need to be achieved according to any specific embodiment of this disclosure. Therefore, for example, those skilled in the art will recognize that the embodiments disclosed herein can be implemented in a manner that achieves or optimizes one or more advantages as taught or suggested herein without necessarily achieving other objectives or advantages that may be taught or suggested herein.

[0018] All of these embodiments are intended to fall within the scope of this disclosure. Those skilled in the art will readily understand these and other embodiments from certain embodiments described in detail below with reference to the accompanying drawings. This disclosure is not limited to any of the specific embodiments(s) discussed. Simple Explanation of the Diagram

[0019] The subject matter of this disclosure is specifically pointed out and explicitly claimed in the conclusion section of this specification. However, a more complete understanding of this disclosure can be best obtained by referring to the embodiments and the claims, while also taking into account the drawings, wherein similar numbers represent similar elements.

[0020] Figure 1 illustrates a schematic diagram of a reactor system according to various embodiments.

[0021] Figure 2 illustrates a schematic diagram of a gas supply system and a reaction chamber for a reactor system according to various embodiments.

[0022] Figure 3 illustrates a schematic diagram of another gas supply system and reaction chamber for a reactor system according to various embodiments.

[0023] Figure 4 illustrates the methods according to various embodiments. Implementation

[0024] While certain embodiments and examples are disclosed below, those skilled in the art will understand that this disclosure extends beyond the specific embodiments and / or uses disclosed herein, as well as their obvious modifications and equivalents. Therefore, it is expected that the scope of this disclosure should not be limited to the specific examples described herein.

[0025] The illustrations presented herein are not intended to be actual views of any particular material, device, structure, or apparatus, but are merely representations to illustrate specific examples of this disclosure.

[0026] As used herein, the term "substrate" may refer to any (or more) underlying material on which a device, circuit, or membrane may be formed.

[0027] As used herein, the term "atomic layer deposition (ALD)" can refer to a vapor deposition process in which deposition cycles (preferably multiple successive deposition cycles) are performed in a process chamber. Generally, during each cycle, a precursor system is chemisorbed onto the deposition surface (e.g., the substrate surface or the surface beneath a previously deposited precursor, such as material from a previous ALD cycle), forming a monolayer or sub-monolayer that is not readily reactive with additional precursors (i.e., self-limiting reaction). Subsequently, if necessary, reactants (e.g., another precursor or reactive gas) can be introduced into the process chamber to convert the chemisorbed precursor into the desired material on the deposition surface. Generally, this reactant can further react with the precursor. Furthermore, excess precursor can be removed from the process chamber during each cycle using a rinsing step, and / or excess reactants and / or reaction byproducts can be removed from the process chamber after the conversion of the chemisorbed precursor. Furthermore, when performed using alternating pulses of (multiple) precursor components, reactive gases, and purging (e.g., inert carrier) gases, the term "atomic layer deposition" as used herein also refers to processes specified by related terms, such as "chemical vapor atomic layer deposition," "atomic layer epitaxy" (ALE), molecular beam epitaxy (MBE), gas source MBE, or organometallic MBE, and chemical beam epitaxy.

[0028] As used herein, the term "chemical vapor deposition (CVD)" can refer to any process in which a substrate is exposed to one or more volatile precursors that react and / or decompose on the substrate surface to create the desired deposition.

[0029] As used herein, the terms "film" and "thin film" can refer to any continuous or discontinuous structure and material deposited by the methods disclosed herein. For example, "film" and "thin film" can include 2D materials, nanorods, nanotubes, or nanoparticles, or even partial or complete molecular layers, or partial or complete atomic layers, or atomic and / or molecular clusters. "Film" and "thin film" can contain materials or layers that have pinholes but are still at least partially continuous.

[0030] As used herein, the term "contaminant" can refer to any undesirable material disposed within a reaction chamber that can affect the purity of a substrate or layer disposed within the reaction chamber, or any undesirable material in any component of the reactor system. The term "contaminant" can refer to, but is not limited to, undesirable deposits, metallic and non-metallic particles, impurities, and waste disposed within the reaction chamber or other components of the reactor system.

[0031] As used herein, the term "gas" may include vaporized solids and / or liquids and may consist of a single gas or a mixture of gases.

[0032] Reactor systems for ALD, CVD, and / or the like can be used in a variety of applications, including depositing and etching materials on substrate surfaces. In various embodiments, referring to Figure 1, reactor system 50 may include a housing 2; a reaction chamber 4; a base 6 for holding substrate 30 during processing; a gas distribution system 8 (e.g., spray nozzles) for distributing one or more reactants to the surface of substrate 30; one or more reactant sources 10, 12 and / or carriers and / or purging gas sources 14 fluidly coupled to reaction chamber 4 via lines 16 to 20; and valves or controllers 22 to 26. Reactant gases or other materials from reactant sources 10, 12 may be applied to substrate 30 within reaction chamber 4. Purging gas from purging gas source 14 may flow to and through reaction chamber 4 to remove any excess reactant or other undesirable material from reaction chamber 4. System 50 may also include a vacuum source 28 fluidly coupled to reaction chamber 4, which may be configured to extract reactants, purging gas, or other materials from reaction chamber 4.

[0033] Various processes (e.g., for depositing materials, etching, and / or cleaning on a substrate in a reaction chamber (e.g., reaction chamber pressure maintained at a desired level and / or within a desired range) can be better regulated in response to a substantially constant pressure within the reaction chamber. Processes (such as deposition, etching, and / or cleaning processes) may involve switching the gases supplied to the reaction chamber. For example, in a deposition process, a first reactant gas may be supplied to the reaction chamber, followed by a flushing gas to flush away any contaminants or residual first reactant gas, and then a second reactant gas may be supplied to the reaction chamber.

[0034] As used herein, the terms "substantially constant," "substantially similar," "substantially equal," and / or similar can be interpreted as negligible fluctuations, fluctuations smaller than detectable fluctuations, fluctuations that do not significantly affect the desired or intended result or nature, and / or fluctuations that are recognized by one of ordinary skill in the art as nearly flat, such that in some embodiments, the difference relative to a comparative or reference fluctuation is less than 20%, less than 10%, less than 5%, or less than 1%, or any range of the foregoing values, of the average or reference fluctuation. In various embodiments, a substantially constant pressure (e.g., the pressure in the reaction chamber of a reactor system or any other component contained therein) can refer to the difference between the maximum and minimum pressures during the treatment of the substrate in the reaction chamber, which is less than 200 Pa, 100 Pa, 50 Pa, 10 Pa, 3 Pa, or 1 Pa.

[0035] As used herein, "substantially simultaneously" can refer to two or more actions or events that occur simultaneously or nearly simultaneously and / or are synchronized within a desired duration (e.g., within one second, one millisecond, or the like). For example, a human observer can determine that two substantially simultaneous actions or events occur at the same time. One or more substantially simultaneous actions or events may occur within five seconds, one second, one-tenth of a second, one millisecond of each other, or occur simultaneously with each other.

[0036] Referring to Figures 2 and 3, the gas supply systems 100 and 200 of the reactor system may include a first gas source 103 and a second gas source 107. The first gas source is fluidly coupled to a first mass flow controller (MFC) 112, and the second gas source is fluidly coupled to a second MFC 114. The first gas source 103 and the second gas source 107 may be in fluid communication with the reaction chamber 150. In various embodiments, a first gas may be supplied from the first gas source 103 through a first gas supply path 120 that is in fluid communication with the reaction chamber 150. In various embodiments, a second gas may be supplied from the second gas source 107 through a second gas supply path 130 that is in fluid communication with the reaction chamber 150.

[0037] In various embodiments, the first gas supply path 120 and / or the second gas supply path 130 may be coupled to the reaction chamber 150 such that the first gas supply path 120 and / or the second gas supply path 130 are in direct fluid communication with the reaction chamber. In various embodiments, the gas supply systems 100 and 200 may include a chamber inlet path 152, which is fluidly coupled to the reaction chamber 150. The chamber inlet path 152 may be fluidly coupled to the first gas supply path 120 and / or the second gas supply path 130. In various embodiments, the first gas supply path 120 and the second gas supply path 130 may be coupled to the chamber inlet path 152 at a convergence point 154, where the first gas supply path 120, the second gas supply path 130, and the chamber inlet path 152 converge and are fluidly coupled to each other. In various embodiments, the first gas supply path 120 and / or the second gas supply path 130 may be coupled to the chamber inlet path 152 at separate locations. Therefore, in various embodiments, a first gas from a first gas source 103 can be supplied to the reaction chamber 150 by traveling through a first gas supply path 120 and a chamber inlet path 152. Similarly, a second gas from a second gas source 107 can be supplied to the reaction chamber 150 by traveling through a second gas supply path 130 and a chamber inlet path 152. In various embodiments, the first gas supply path 120 can be fluidly coupled to the reaction chamber 150 and / or the chamber inlet path 152 at its end, and the second gas supply path 130 can be fluidly coupled to the reaction chamber 150 and / or the chamber inlet path 152 at its end.

[0038] In various embodiments, different gases may be supplied to reaction chamber 150 at different times during processes (e.g., deposition, etching, and / or cleaning processes) occurring in reaction chamber 150. For example, a first gas from a first gas source 103 may be supplied to reaction chamber 150 (e.g., at a constant flow for a period of time, at a suitable rate and / or for any suitable duration, and / or the like), and subsequently a second gas from a second gas source 107 may be supplied to reaction chamber 150 (e.g., simultaneously or at different times with the first gas). In various embodiments, the first and second gases may be supplied to reaction chamber 150 in a deposition cycle. A deposition cycle may include, for example, supplying the first gas to reaction chamber 150, followed by supplying the second gas to reaction chamber 150, wherein this cycle may be repeated. In various embodiments, the reactor system and the gas supply system therein may include any suitable number of gas sources (such as a third gas source). In this embodiment, a deposition cycle on a substrate may include supplying the first gas, then the second gas, and then the third gas to the reaction chamber. The gas used in the process can be any suitable type of gas (such as reactant gas (or gas containing any material that will be deposited or reacted to form a deposited layer on the substrate), or flushing gas used to remove any excess reactant gas or byproduct / contaminant from the reaction chamber before the next step in the deposition process).

[0039] In various embodiments, gas supply systems 100 and 200 may include a vent line 140 configured to deliver a first or second gas to an exhaust line 160 fluidly coupled downstream of reaction chamber 150. Exhaust line 160 may be fluidly coupled to a vacuum source (e.g., vacuum source 28 of Figure 1) and upstream of the vacuum source. Thus, vent line 140 provides a gas path downstream of reaction chamber 150, bypassing reaction chamber 150 from the first gas supply path 120 and / or the second gas supply path 130. In various embodiments, a pressure control valve 162 may be coupled to exhaust line 160. Pressure control valve 162 may be configured to open or close to varying degrees to adjust or control the pressure in exhaust line 160 and / or reaction chamber 150 (e.g., similar to the operation of gas-guided control valve 158 discussed herein). Pressure control valve 162 may be controlled by controller 60 and / or processor 65.

[0040] In various embodiments, gas supply paths for one or more gas sources may be coupled to a vent line. For example, as shown in the gas supply system 100 of Figure 2, both a first gas supply path 120 and a second gas supply path 130 may be fluidly coupled to a vent line 140. The first gas supply path 120 may include a first main gas line 122 and a first branch gas line 124. The first main gas line 122 may be fluidly coupled to a chamber inlet path 152 and / or a reaction chamber 150, while the first branch gas line 124 may be fluidly coupled between the first main gas line 122 and the vent line 140. In various embodiments, the first branch gas line 124 may be a portion of the vent line 140. The second gas supply path 130 in the gas supply system 100 may include a second main gas line 132 and a second branch gas line 134. The second main gas line 132 may be fluidly coupled to the chamber inlet path 152 and / or the reaction chamber 150, while the second branch gas line 134 may be fluidly coupled between the second main gas line 132 and the ventilation line 140. In the gas supply system 200 shown in Figure 3, the first gas supply path 120 may not include a first branch gas line or may otherwise be fluidly connected to the ventilation line 140.

[0041] In various embodiments, the gas supply system (e.g., gas supply systems 100 and 200) may include one or more valves to control fluid or gas flow in various fluid paths of the gas supply system. For example, in gas supply systems 100 and 200, a first gas supply path 120 may include a first main line valve 126 coupled to a first gas main line 122 and configured to at least partially increase or decrease the first gas flow through the first gas main line 122. The first gas supply path 120 may include a first branch line valve 128 coupled to a first gas branch line 124 and configured to at least partially increase or decrease the first gas flow through the first gas branch line 124. Similarly, a second gas supply path 130 may include a second main line valve 136 coupled to a second gas main line 132 and configured to at least partially increase or decrease the second gas flow through the second gas main line 132. In the gas supply system 200, the second gas supply path 130 may include a second branch line valve 138, which is coupled to a second gas branch line 134 and configured to at least partially increase or decrease the second gas flow through the second gas branch line 134.

[0042] In various embodiments, gas supply systems 100 and 200 and / or reactor systems including gas supply systems may include one or more processors and / or controllers. A controller (e.g., controller 60) including a processor (e.g., processor 65) may electronically communicate with a first main line valve 126, a first branch line valve 128, a second main line valve 136, and / or a second branch line valve 138, and / or with a controller that controls such valves. The processor and / or controller may communicate with tangible, non-transitory memory configured to communicate with the processor and / or controller. The tangible, non-transitory memory has instructions stored thereon that respond to execution by the processor and / or controller, causing the processor and / or controller to perform or facilitate operations, including at least partially opening or closing the respective first main line valve 126, first branch line valve 128, second main line valve 136, and / or second branch line valve 138.

[0043] As discussed above, different gases may be supplied to reaction chamber 150 at different times during the processing of the substrate in reaction chamber 150 (or any other process performed in reaction chamber 150). However, if the pressure within reaction chamber 150 is maintained at a desired level (e.g., within a desired pressure range and / or substantially constant), material deposition on the substrate can be better controlled to achieve the desired result. Therefore, it may be advantageous to supply (or increase) the gas supply to reaction chamber 150 in response to a reduction or cessation of the supply of another gas to reaction chamber 150, or to otherwise modify the gas flow within the reactor system to achieve a substantially constant reaction chamber pressure (e.g., increasing the gas flow to reaction chamber 150 in response to a reduction in the flow of another gas to reaction chamber 150).

[0044] Therefore, the gas supply system 100 shown in Figure 2 can be configured to supply gas to the reaction chamber 150 to maintain a desired pressure (e.g., a substantially constant pressure) therein. The first gas from the first gas source 103 can be a reactant gas, and the second gas from the second gas source 107 can be a purging gas (e.g., a non-reactive gas, such as nitrogen or an inert gas). However, the first and second gases (or any additional gases from additional gas sources in the reactor system) can be any suitable gas for a specific process or application.

[0045] Referring also to Figure 4, according to various embodiments, a method 400 for maintaining a desired pressure in a reaction chamber may include allowing a first gas to flow from a first gas source 103 through a first gas supply path 120 to the reaction chamber 150 (step 402). To achieve the aforementioned step, a first main line valve 126 may be at least partially opened, and a first branch line valve 128 may be closed. While the first gas is supplied to the reaction chamber 150, a second gas from a second gas source 107 may flow to an exhaust line 160 (step 404). To achieve the aforementioned step, a second branch line valve 138 may be at least partially opened, and a second main line valve 136 may be closed.

[0046] The first gas can be supplied to the reaction chamber 150 in any suitable mode (e.g., constant flow, pulse, etc.) for any suitable duration. Similarly, the second gas can be supplied to the exhaust line 160 in any suitable mode for any suitable duration.

[0047] In response to the completion of the processing or deposition step containing the first gas in reaction chamber 150, the flow of the first gas into reaction chamber 150 may be stopped (step 406) or reduced. To reduce or stop the flow of the first gas into reaction chamber 150, the first main line valve 126 may be at least partially closed, preventing the first gas from flowing through the first gas main line 122 to reaction chamber 150. In response to the at least partial closure of the first main line valve 126 to reduce or stop the flow of the first gas through the first gas main line 122, the first branch line valve 128 may be opened to allow the first gas to flow to exhaust line 160 (step 412). In various embodiments, in response to the opening of the first branch line valve 128, the first main line valve 126 may be at least partially closed to reduce or stop the flow of the first gas through the first gas main line 122 to allow the first gas to flow to exhaust line 160. The at least partial closure of the first main line valve 126 and the at least partial opening of the first branch line valve 128 may be substantially simultaneous or within a desired (e.g., predetermined) duration (e.g., within 1 second, 1 millisecond, or the like).

[0048] Since the first gas can no longer flow to or has reduced flow to the reaction chamber 150, to maintain the desired pressure in the reaction chamber 150, the second gas can be routed to the reaction chamber 150. The flow of the second gas to the exhaust line 160 can be stopped (step 408) or reduced. To reduce or stop the flow of the second gas to the exhaust line 160, the second branch line valve 138 can be at least partially closed, such that the flow of the second gas is reduced and / or prevented from flowing through the second branch line valve 138. In response to the at least partial closure of the second branch line valve 138 to reduce or stop the flow of the second gas through the second gas branch line 134, the second main line valve 136 can be at least partially opened to allow the second gas to flow to the reaction chamber 150 (step 410). In various embodiments, in response to the opening of the second main line valve 136, the second branch line valve 138 can be at least partially closed to reduce or stop the flow of the second gas through the second gas branch line 134 to allow the second gas to flow to the reaction chamber 150. The closure of at least part of the second branch line valve 138 and the opening of at least part of the second main line valve 136 may be substantially simultaneous.

[0049] In various embodiments, changing the flow of the first gas from the reaction chamber 150 to the exhaust line 160 can substantially occur simultaneously with changing the flow of the second gas from the exhaust line 160 to the reaction chamber 150; and / or when the second gas flow changes from the exhaust line to the reaction chamber. That is, at least partially closing the first main line valve 126 can substantially occur simultaneously with opening the first branch line valve 128, closing the second branch line valve 138, and / or opening the second main line valve 136 (and / or partially opening or closing any such valve); and / or when opening the first branch line valve 128, closing the second branch line valve 138, and / or opening the second main line valve 136 (and / or partially opening or closing any such valve). Therefore, the gas flow to the reaction chamber 150 can be continuous, or any change in the gas flow to the reaction chamber 150 can be minimized or prevented. The processor and / or controller may command and / or otherwise cause the first main line valve 126, the first branch line valve 128, the second main line valve 136, and / or the second branch line valve 138 to open or close at desired time points(multiple) times.

[0050] In various embodiments, the first gas flow to reaction chamber 150 may include a first flow rate, causing the pressure within reaction chamber 150 to be controlled. A second gas flow to reaction chamber 150 may include a second flow rate, substantially equal to the first flow rate, to maintain the pressure within the reaction chamber at a desired level (e.g., between a desired minimum pressure and a desired maximum pressure). Therefore, pressure fluctuations in reaction chamber 150 that may occur during changes in the gas flowing to reaction chamber 150 can be minimized or prevented.

[0051] To reapply the first gas to the substrate in reaction chamber 150, the steps of method 400 used for gas supply system 100 may further include reducing or stopping the first gas flow to exhaust line 160 by at least partially closing the first branch line valve 128 (step 414); and / or reducing or stopping the second gas flow to reaction chamber 150 by at least partially closing the second main line valve 136 (step 416). In response, method 400 may again begin by allowing the first gas to flow to reaction chamber 150 (step 402) and the second gas to flow to exhaust line 160 (step 404). In various embodiments, changing the first gas flow from flowing to exhaust line 160 to flowing to reaction chamber 150 can substantially occur simultaneously with changing the second gas flow from flowing to reaction chamber 150 to flowing to exhaust line 160. In other words, opening the first main line valve 126 can substantially occur simultaneously with closing the first branch line valve 128, opening the second branch line valve 138, and / or closing the second main line valve 136 (and / or any partial opening or closing of such valves); and / or occur during closing the first branch line valve 128, opening the second branch line valve 138, and / or closing the second main line valve 136 (and / or any partial opening or closing of such valves). Therefore, the flow of gas to the reaction chamber 150 can be substantially continuous, or any alteration to the gas flowing to the reaction chamber 150 can be minimized or prevented.

[0052] In various embodiments, the first gas and the second gas can flow continuously from the first gas source 103 and the second gas source 107, respectively. Therefore, changing the first gas flow and the second gas flow (e.g., the destination and / or flow rate) may only require changing the opening or closing of the first main line valve 126, the first branch line valve 128, the second main line valve 136, and / or the second branch line valve 138, without requiring additional actions (such as starting and stopping or increasing and decreasing the gas flow from the first gas source 103 and the second gas source 107).

[0053] Similar to the gas supply system 100 described above for method 400, the gas supply system 200 shown in Figure 3 can be configured to supply gas to the reaction chamber 150 to maintain a desired pressure (e.g., a substantially constant pressure). The first gas from the first gas source 103 can be a reactant gas, and the second gas from the second gas source 107 can be a purging gas (e.g., a non-reactive gas, such as nitrogen or an inert gas). However, the first and second gases (or any additional gases from additional gas sources in the reactor system) can be any suitable gas for a specific process or application.

[0054] Referring also to Figure 4, according to various embodiments, a method 400 for maintaining a desired pressure in a reaction chamber (such as when applied to a gas supply system 200) may include allowing a first gas to flow from a first gas source 103 through a first gas supply path 120 to the reaction chamber 150 (step 402). To achieve the aforementioned step, the first main line valve 126 may be at least partially opened. While the first gas is supplied to the reaction chamber 150, a second gas from a second gas source 107 may flow to an exhaust line 160 (step 404). To achieve the aforementioned step, the second branch line valve 138 may be at least partially opened, and the second main line valve 136 may be closed.

[0055] The first gas can be supplied to the reaction chamber 150 in any suitable mode (e.g., constant flow, pulse, etc.) for any suitable duration. Similarly, the second gas can be supplied to the exhaust line 160 in any suitable mode for any suitable duration.

[0056] In response to the completion of the processing or deposition step containing the first gas in reaction chamber 150, the flow of the first gas into reaction chamber 150 may be stopped (step 406) or reduced. To reduce or stop the flow of the first gas into reaction chamber 150, the first main line valve 126 may be at least partially closed, such that the flow of the first gas is reduced and / or prevented from flowing through the first gas main line 122; and / or the flow of the first gas from the first gas source may be reduced or stopped (e.g., via MFC 112). For example, the flow of the first gas from the first gas source 103 may be reduced or terminated relative to the first gas flow in gas supply system 100, which may be continuous and directed from the reaction chamber 150 to the exhaust line 160. In various embodiments, in response to a command from the processor and / or controller (e.g. to the first main line valve 126 and / or MFC 112), the first main line valve 126 may at least partially close and / or may reduce or stop the first gas flow from the first gas source 103 to reduce or stop the first gas flow through the first gas main line 122.

[0057] Since the first gas can no longer flow to or has reduced flow to the reaction chamber 150, to maintain the pressure in the reaction chamber 150 at a desired level, the second gas can flow to the reaction chamber 150. The flow of the second gas to the exhaust line 160 can be stopped (step 408) or reduced. To reduce or stop the flow of the second gas to the exhaust line 160, the second branch line valve 138 can be at least partially closed, such that the flow of the second gas is reduced and / or prevented from flowing through the second branch line valve 138. In response to the at least partial closure of the second branch line valve 138 to reduce or stop the flow of the second gas through the second gas branch line 134, the second main line valve 136 can be at least partially opened to allow the second gas to flow to the reaction chamber 150 (step 410). In various embodiments, in response to the opening of the second main line valve 136, the second branch line valve 138 can be at least partially closed to reduce or stop the flow of the second gas through the second gas branch line 134 to allow the second gas to flow to the reaction chamber 150. The at least partial closure of the second branch line valve 138 and the at least partial opening of the second main line valve 136 can occur substantially simultaneously.

[0058] In various embodiments, reducing or stopping the first gas flow from the first gas source 103 to the reaction chamber 150 can substantially occur simultaneously with changing the second gas flow from flowing to the exhaust line 160 to flowing to the reaction chamber 150; and / or when the second gas flow changes from flowing to the exhaust line to flowing to the reaction chamber. That is, reducing or stopping the first gas flow to the reaction chamber 150 can substantially occur simultaneously with closing the second branch line valve 138 and / or opening the second main line valve 136 (and / or partially opening or closing any such valve); and / or when closing the second branch line valve 138 and / or opening the second main line valve 136 (and / or partially opening or closing any such valve). Therefore, the gas flow to the reaction chamber 150 can be continuous and substantially constant, or any change in the gas flow to the reaction chamber 150 can be minimized or prevented. Therefore, the pressure within the reaction chamber 150 can be maintained at a desired level (e.g., substantially constant). The processor and / or controller may command and / or otherwise cause the first gas flow to decrease or stop and / or the first main line valve 126, the second main line valve 136, and / or the second branch line valve 138 to open or close at least partially at desired time points(multiple) times.

[0059] In various embodiments, the first gas flow to reaction chamber 150 may include a first flow rate, causing the pressure within reaction chamber 150 to be controlled. A second gas flow to reaction chamber 150 may include a second flow rate, substantially equal to the first flow rate, to maintain the pressure within the reaction chamber at a desired level (between an acceptable minimum pressure and an acceptable maximum pressure). Therefore, pressure fluctuations in reaction chamber 150 that may occur during changes in the gas flowing to reaction chamber 150 can be minimized or prevented.

[0060] To reapply the first gas to the substrate in reaction chamber 150, the steps of method 400 used for gas supply system 200 may further include reducing or stopping the second gas flow to reaction chamber 150 by at least partially closing the second main line valve 136 and / or at least partially opening the second branch line valve 138 (step 416). In response, method 400 may restart by allowing the first gas to flow to reaction chamber 150 (step 402) and the second gas to flow to exhaust line 160 (step 404). The first gas may be restarted to flow to reaction chamber 150 by at least partially opening the first main line valve 126 and / or starting the first gas flow from the first gas source 103 (e.g., via MFC 112). In various embodiments, the initiation of the first gas flow to reaction chamber 150 may substantially occur simultaneously with the change of the second gas flow from flowing to reaction chamber 150 to flowing to exhaust line 160. In other words, the initial flow of the first gas from the first gas source 103 to the reaction chamber can substantially occur simultaneously with the opening of the first main line valve 126, the opening of the second branch line valve 138, and / or the closing of the second main line valve 136 (and / or partial opening or closing of any such valves). Therefore, the flow of gas to the reaction chamber 150 can be continuous, or any change in the gas flow to the reaction chamber 150 can be minimized or prevented.

[0061] In various embodiments, the second gas can flow continuously from the second gas source 107. Therefore, changing the second gas flow (e.g., the destination and / or flow rate) may only require changing the opening or closing of the second main line valve 136 and / or the second branch line valve 138, without requiring additional actions (such as starting and stopping, or increasing and decreasing the gas flow from the second gas source 107). Furthermore, changes to the second gas flow (e.g., changing from flowing to the exhaust line 160 to flowing to the reaction chamber 150, or vice versa) may occur in response to the detection of the start or stop of the first gas flow. That is, the processor and / or controller may detect at least a partial cessation or start of the first gas flow from the first gas source 103, and in response, the processor and / or controller may cause an appropriate change in the second gas flow based on the first gas flow. For example, in response to the detection of the first gas stopping its flow to the reaction chamber 150, the second gas flow may be directed to the reaction chamber 150. In response to the detection of the initiation of a first gas flow into reaction chamber 150, a second gas flow may be at least partially directed to exhaust line 160. In various embodiments, the first gas flow may be initiated and / or stopped (or increased and / or decreased) based on or in response to the processor and / or controller detecting a change in the destination of the second gas flow. For example, in response to the detection of the second gas stopping its flow into reaction chamber 150 and / or starting its flow into exhaust line 160, the first gas flow may be initiated (e.g., to reaction chamber 150). In response to the detection of the second gas flow into reaction chamber 150 and / or stopping its flow into exhaust line 160, the first gas flow may be stopped (e.g., to reaction chamber 150). As discussed herein, such changes in gas flow can occur substantially simultaneously.

[0062] The steps of method 400 can be performed in any suitable order and / or combination, depending on the gas supply system used to implement the method (e.g., different order / combination of steps of method 400 may be used between gas supply system 100 and gas supply system 200).

[0063] In various embodiments, the flow rates of the first gas and the second gas from the first gas source 103 and the second gas source 107, respectively, can be adjusted by MFC 112 and MFC 114 ("a plurality of MFCs"). The plurality of MFCs can detect the flow rates of the first gas and the second gas passing through them (MFC 112 can detect the flow rate of the first gas, and MFC 114 can detect the flow rate of the second gas), and adjust the flow rates based on the detected difference between the actual flow rate and the desired flow rate (e.g., by adjusting the valves included in the plurality of MFCs).

[0064] The flow rates from MFC 112 and MFC 114 can be based on or respond to the pressure within the respective gas paths through which the gas flows. For example, when the first gas or the second gas flows through vent line 140 to exhaust line 160 (e.g., when one of the two gases flows to reaction chamber 150), and there is a change in pressure within vent line 140 and / or exhaust line 160, the respective MFC (and / or its electronically communicated processor and / or controller) can increase or decrease the first gas flow or the second gas flow to compensate for the pressure change. Similarly, when the first gas or the second gas flows to the reaction chamber 150 through the first gas main line 122 or the second gas main line 132 (and through the chamber inlet path 152), and when there is a change in the pressure in the first gas main line 122, the second gas main line 132, the chamber inlet path 152, and / or the reaction chamber 150, each MFC (and / or its electronically communicated processor and / or controller) can increase or decrease the first gas flow or the second gas flow to compensate for the pressure change.

[0065] However, changes in the pressure and / or flow rate of either the first or second gas can cause fluctuations in the gas flow within the reaction chamber 150 during the switching of which gas flows to the reaction chamber 150, and thus can lead to unwanted pressure fluctuations within the reaction chamber 150. For example, if the flow rates of the first gas through MFC 112 and the second gas through MFC 114 are equal, but then MFC 114 changes the flow rate of the second gas to compensate for detected pressure changes in the vent line 140 and / or exhaust line 160 (while the second gas is flowing through them), then the flow rate of the second gas is now different from the flow rate of the first gas. Therefore, when the first gas stops flowing to the reaction chamber 150 and the flow of the second gas switches from flowing to the exhaust line 160 to flowing to the reaction chamber 150, the different flow rate of the second gas can cause unwanted pressure fluctuations within the reaction chamber 150.

[0066] In various embodiments, vent line 140 may include a pneumatic control valve 158. The pneumatic control valve 158 may be coupled and fluidly coupled to vent line 140 such that a first gas or a second gas flowing through vent line 140 also flows through the pneumatic control valve 158. The pneumatic control valve 158 may be configured to allow adjustment of the pressure within vent line 140 and / or exhaust line 160 while maintaining a substantially constant flow rate of gas flowing through vent line 140 and / or exhaust line 160. Therefore, the flow rate of the first gas via MFC 112 and the flow rate of the second gas via MFC 114 may be substantially constant (e.g., as commanded by the processor and / or controller), and the pressure within vent line 140 and / or exhaust line 160 may be adjusted via the pneumatic control valve 158. The pneumatic control valve 158 may be any suitable device (such as a needle valve, throttle valve, or the like).

[0067] In various embodiments, gas supply systems 100 and 200 may further include a pressure monitor 148 configured to monitor pressure within system 100 or 200 (step 418 of method 400). For example, pressure monitor 148 may be coupled to vent line 140 and configured to monitor pressure within vent line 140 and / or exhaust line 160. Pressure monitor 148 may include a processor and / or controller and / or be in electronic communication with the processor and / or controller. Thus, in various embodiments, pressure monitor 148 may transmit pressure readings of the pressure in vent line 140 and / or exhaust line 160 to the processor and / or controller. Pressure monitor 148 may acquire and / or transmit pressure readings in any desired mode (e.g., one reading per second or similar), for any desired duration, and at any desired point in time. The desired pressure within the vent line 140 and / or exhaust line 160 can be determined by the processor and / or controller (e.g., by user input and / or as part of a specific process condition). The processor and / or controller can receive pressure readings from the pressure monitor 148 and compare the readings with the desired pressure. In response to detecting a difference between the detected actual pressure and the desired pressure (or a difference exceeding an acceptable level), the processor and / or controller can command the pneumatic control valve 158 to appropriately adjust the pressure within the vent line 140 and / or exhaust line 160 to be closer to the desired pressure value. In response, the pneumatic control valve 158 can be adjusted (e.g., further opened or closed) to adjust the pressure in the vent line 140 and / or exhaust line 160 (step 420 of method 400) to achieve a value closer to or equal to the desired pressure value.

[0068] In various embodiments, any gas path within the gas supply systems 100 and 200 may include a pneumatic control valve to allow adjustment of the pressure within the respective gas path. For example, the first main gas line 122, the first branch gas line 124, the second main gas line 132, the second branch gas line 134, and / or the chamber inlet path 152 may include a pneumatic control valve similar to pneumatic control valve 158. The processor and / or controller may electronically communicate with any or all of these pneumatic control valves, receive pressure values ​​from the pneumatic control valves for the pressure within the respective gas paths of systems 100 and 200, and compare such pressure values ​​with desired pressure values ​​for each respective gas path. In response to detecting a difference between the measured pressure value and the desired pressure value for a particular gas path within the system, the processor and / or controller may command the respective pneumatic control valve to adjust such that the pressure within the gas path is closer to or equal to the respective desired pressure.

[0069] During processes using gas supply systems 100 and / or 200 (e.g., deposition, etching, cleaning, and / or the like), if the pressure in vent line 140 differs significantly from the pressure in the first gas main line 122, the second gas main line 132, the chamber inlet path 152, and / or the reaction chamber 150, the gas flow rate through it may differ when the gas flows from the exhaust line 160 to the reaction chamber 150, or vice versa. As discussed herein, this gas flow rate fluctuation can cause pressure fluctuations in the reaction chamber 150 (e.g., during switching of which gas flows to the reaction chamber 150). Such pressure fluctuations in the reaction chamber 150 can be undesirable and may negatively affect results (e.g., material deposition on the substrate within the reaction chamber 150 during deposition processes).

[0070] Therefore, the presence of a gas-guided control valve (e.g., gas-guided control valve 158) within the gas supply system allows for periodic and / or constant monitoring of the pressure in one or more gas paths within the system. In various embodiments, such monitoring can be real-time or near-real-time. Thus, pressure fluctuations (e.g., those caused by the accumulation of contaminants (e.g., deposited reactants, byproducts, effluent materials, and / or the like) in individual gas paths) can be detected and quickly resolved (e.g., by adjusting the gas-guided control valve) to mitigate or avoid any resulting flow rate and / or pressure fluctuations in the reaction chamber 150.

[0071] Benefits and other advantages have been described herein with reference to specific embodiments. Furthermore, the connecting lines shown in the various figures contained herein are intended to represent illustrative functional relationships and / or physical couplings between different elements. It should be noted that many alternative or additional functional relationships or physical connections may exist in a real system. However, no benefit, advantage, solution to a problem, or element that causes any benefit, advantage, or solution to occur or become more apparent should be construed as a critical, necessary, or essential feature or element of this disclosure. The scope of this disclosure is therefore limited only by the appended claims, wherein, unless expressly stated otherwise, reference to an element in the singular is not intended to mean "one and only one," but rather "one or more." Furthermore, the use of phrases such as "at least one of A, B, or C" in the scope of the patent application is intended to mean that A can exist alone in one embodiment, B can exist alone in one embodiment, C can exist alone in one embodiment, or any combination of elements A, B, and C can exist in a single embodiment; for example, A and B, A and C, B and C, or A and B and C.

[0072] This document provides systems, methods, and apparatus. In the embodiments described herein, references to "one embodiment," "an embodiment," "an example embodiment," etc., indicate that the said embodiment may include a specific feature, structure, or characteristic, but each embodiment may not necessarily include that specific feature, structure, or characteristic. Furthermore, such phrases do not necessarily refer to the same embodiment. Further, when a specific feature, structure, or characteristic is described in conjunction with an embodiment, it is generally understood that those skilled in the art will be able to use such feature, structure, or characteristic in conjunction with other embodiments, whether or not it is explicitly described. After reading this specification, those skilled in the art will understand how to implement this disclosure in alternative embodiments.

[0073] Furthermore, no element, component, or method step in this disclosure is intended to be made available to the public, whether or not it is expressly referred to in the claims. Elements claimed herein should not be construed under 35 USC 112(f) unless the phrase "component, which means for" is used to expressly refer to an element. As used herein, the terms "comprises" or any other variation thereof are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that includes a list of elements may include not only those elements but may also include other elements not expressly listed or inherent to such process, method, article, or apparatus.

[0074] 2: Outer shell 4: Reaction Chamber 6: Base 8: Gas Distribution System 10: Source of reactants 12: Reactant source 14: Carrier / Purge Gas Source 16, 18, 20: Pipelines 22, 24, 26: Valves / Controllers 28: Vacuum Source 30: Substrate 50: Reactor System 60: Controller 65: Processor 100, 200: Gas supply system 103: First Gas Source 107: Second Gas Source 112: First Mass Flow Controller / MFC 114: Second MFC / MFC 120: First gas supply route 122: First Gas Main Line 124: First gas branch line 126: First main pipeline valve 128: First branch pipeline valve 130: Second gas supply path 132: Second Gas Main Line 134: Second gas branch line 136: Second main pipeline valve 138: Second branch pipeline valve 140: Ventilation line 148: Pressure Monitor 150: Reaction Chamber 152: Entrance Path 154: Convergence Point 158: Pneumatic control valve 160: Exhaust pipe 162: Pressure control valve 400: Method 402,404,406,408,410,412,414,416,418,420: Steps

Claims

1. A reactor system comprising: a first gas source including a reactant; a first gas supply path fluidly coupled to the first gas source, the first gas supply path including a first main gas line and a first branch gas line; a second gas source; a second gas supply path fluidly coupled to the second gas source; a reaction chamber fluidly coupled to the first gas supply path and the second gas supply path, wherein the first gas supply path is fluidly coupled to the reaction chamber at an end of the first gas supply path, and the second gas supply path is fluidly coupled to the reaction chamber at an end of the second gas supply path, wherein a first gas is supplied from the first gas source to the reaction chamber and a second gas is supplied from the second gas source to the reaction chamber to achieve pressure stability in the reaction chamber; and an exhaust line fluidly coupled to the reaction chamber and downstream of the reaction chamber. A vent line fluidly coupled to at least one of the first gas supply path and the second gas supply path and fluidly coupled to the exhaust line, wherein the vent line bypasses the reaction chamber; a pressure monitor coupled to the vent line and configured to monitor the pressure of one of the vent lines within the vent line; a vent line pneumatic control valve coupled to the vent line and configured to adjust in response to feedback from the pressure monitor; and a controller configured to: control a first branch line valve in the first gas branch line to control the flow of the reactant to the vent line; and monitor the pressure of the vent line within the vent line via the pressure monitor; The vent line pressure is adjusted based on the pressure detected by the pressure monitor; and the flow of the second gas to the exhaust line is reduced but not stopped at the same time, while the flow of the first gas to the reaction chamber is reduced but not stopped.

2. The reactor system as claimed in claim 1, wherein the reaction chamber is fluidly coupled to the first gas supply path and the second gas supply path via a chamber inlet path upstream of the reaction chamber, wherein the first gas supply path is fluidly coupled to the chamber inlet path at the end of the first gas supply path, and the second gas supply path is fluidly coupled to the chamber inlet path at the end of the second gas supply path.

3. The reactor system as claimed in claim 1, wherein the vent line is fluidly connected to the first gas supply path and the second gas supply path.

4. The reactor system as claimed in claim 1, wherein the second gas supply path includes a second main gas line and a second branch gas line, wherein the second main gas line is in fluid communication with the reaction chamber, and wherein the second branch gas line is in fluid communication with the vent line.

5. The reactor system as claimed in claim 4, wherein the first gas main line includes a first main line valve disposed upstream of the reaction chamber and downstream of the first gas branch line, wherein the first gas branch line includes the first branch line valve, wherein the second gas main line includes a second main line valve disposed upstream of the reaction chamber and downstream of the second gas branch line, wherein the second gas branch line includes a second branch line valve, wherein the second branch line valve is configured to at least partially increase or decrease a gas flow through the second gas branch line.

6. The reactor system as claimed in claim 1, further comprising: a first mass flow controller located between the first gas source and the venting line; and a second mass flow controller located between the second gas source and the venting line.

7. The reactor system as claimed in claim 6, wherein the controller is further configured to detect at least a partial cessation or start of the flow of the first gas from the first gas source, and in response, causes a corresponding change in the flow of the second gas based on a command to the second mass flow controller.

8. The reactor system as claimed in claim 6, wherein the controller responds to a decrease in the flow of the second gas to the reaction chamber by causing the first mass flow controller to increase the flow of the first gas.

9. The reactor system as claimed in claim 6, wherein the controller causes a change in the flow rate from the first mass flow controller based on the pressure inside the reaction chamber.

10. The reactor system as claimed in claim 6, wherein the controller causes a change in the flow rate from the first mass flow controller based on the pressure of the vent line.

11. The reactor system as claimed in claim 10, wherein the controller causes a change in the flow rate from the second mass flow controller based on the pressure of the vent line.

12. The reactor system as claimed in claim 1, wherein the monitoring includes detecting a difference between the pressure in the vent line and the pressure in the reaction chamber.

13. The reactor system as claimed in claim 12, wherein the controller is further configured to adjust the vent line gas conduction control valve such that the difference between the vent line pressure and the reaction chamber pressure is small.

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